JP2021506114A5 - - Google Patents

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Publication number
JP2021506114A5
JP2021506114A5 JP2020530490A JP2020530490A JP2021506114A5 JP 2021506114 A5 JP2021506114 A5 JP 2021506114A5 JP 2020530490 A JP2020530490 A JP 2020530490A JP 2020530490 A JP2020530490 A JP 2020530490A JP 2021506114 A5 JP2021506114 A5 JP 2021506114A5
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JP
Japan
Prior art keywords
mesa
base
openings
hbt
bipolar transistor
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JP2020530490A
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English (en)
Japanese (ja)
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JP7201684B2 (ja
JP2021506114A (ja
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Priority claimed from US15/834,100 external-priority patent/US20190181251A1/en
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Publication of JP2021506114A5 publication Critical patent/JP2021506114A5/ja
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JP2020530490A 2017-12-07 2018-11-07 Ｒｆ用途向けのヘテロ接合バイポーラトランジスタ用のメッシュ構造 Active JP7201684B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/834,100 US20190181251A1 (en) 2017-12-07 2017-12-07 Mesh structure for heterojunction bipolar transistors for rf applications
US15/834,100 2017-12-07
PCT/US2018/059532 WO2019112741A1 (en) 2017-12-07 2018-11-07 Emitter-base mesh structure in heterojunction bipolar transistors for rf applications

Publications (3)

Publication Number Publication Date
JP2021506114A JP2021506114A (ja) 2021-02-18
JP2021506114A5 true JP2021506114A5 (https=) 2021-11-25
JP7201684B2 JP7201684B2 (ja) 2023-01-10

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ID=64477288

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020530490A Active JP7201684B2 (ja) 2017-12-07 2018-11-07 Ｒｆ用途向けのヘテロ接合バイポーラトランジスタ用のメッシュ構造

Country Status (9)

Country Link
US (1) US20190181251A1 (https=)
EP (1) EP3721477A1 (https=)
JP (1) JP7201684B2 (https=)
KR (1) KR102645071B1 (https=)
CN (1) CN111448665B (https=)
BR (1) BR112020011108B1 (https=)
SG (1) SG11202003686WA (https=)
TW (1) TWI813598B (https=)
WO (1) WO2019112741A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020257974A1 (zh) * 2019-06-24 2020-12-30 华为技术有限公司 异质结双极型晶体管及其制备方法
JP2021048250A (ja) * 2019-09-18 2021-03-25 株式会社村田製作所 半導体装置
JP2021132100A (ja) * 2020-02-19 2021-09-09 株式会社村田製作所 高周波電力増幅素子
CN113594239B (zh) * 2021-07-20 2022-09-27 弘大芯源(深圳)半导体有限公司 一种具有网格结构的双极功率晶体管
CN113921598B (zh) * 2021-08-25 2023-06-20 厦门市三安集成电路有限公司 一种hbt器件的金属连线方法

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US3319139A (en) * 1964-08-18 1967-05-09 Hughes Aircraft Co Planar transistor device having a reentrant shaped emitter region with base connection in the reentrant portion
NL6813997A (https=) * 1968-09-30 1970-04-01
JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
JPS59210668A (ja) * 1983-05-16 1984-11-29 Fujitsu Ltd 半導体装置
JPS60165759A (ja) * 1984-02-07 1985-08-28 Nippon Denso Co Ltd 集積回路素子
US4654687A (en) * 1985-03-28 1987-03-31 Francois Hebert High frequency bipolar transistor structures
US5140399A (en) * 1987-04-30 1992-08-18 Sony Corporation Heterojunction bipolar transistor and the manufacturing method thereof
JPH01189961A (ja) * 1988-01-26 1989-07-31 Mitsubishi Electric Corp 半導体装置
US5502338A (en) * 1992-04-30 1996-03-26 Hitachi, Ltd. Power transistor device having collector voltage clamped to stable level over wide temperature range
JPH08279562A (ja) * 1994-07-20 1996-10-22 Mitsubishi Electric Corp 半導体装置、及びその製造方法
DE10004111A1 (de) * 2000-01-31 2001-08-09 Infineon Technologies Ag Bipolartransistor
JP2001230261A (ja) 2000-02-16 2001-08-24 Nec Corp 半導体装置及びその製造方法
JP2002076014A (ja) * 2000-08-30 2002-03-15 Mitsubishi Electric Corp 高周波用半導体装置
US8159048B2 (en) * 2004-01-30 2012-04-17 Triquint Semiconductor, Inc. Bipolar junction transistor geometry
JP3847756B2 (ja) * 2004-02-25 2006-11-22 松下電器産業株式会社 高周波増幅回路
JP4089662B2 (ja) * 2004-07-21 2008-05-28 ソニー株式会社 バイポーラトランジスタとその製造方法
JP2006049693A (ja) 2004-08-06 2006-02-16 Matsushita Electric Ind Co Ltd 半導体装置
JP2006332117A (ja) * 2005-05-23 2006-12-07 Sharp Corp トランジスタ構造および電子機器
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JP2010080925A (ja) 2008-08-26 2010-04-08 Sanyo Electric Co Ltd 半導体装置
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EP2458639A1 (en) * 2010-11-25 2012-05-30 Nxp B.V. Bipolar transistor with base trench contacts insulated from the emitter.
TWI512905B (zh) * 2012-06-13 2015-12-11 Win Semiconductors Corp 化合物半導體元件晶圓整合結構
TWI540722B (zh) * 2013-04-17 2016-07-01 穩懋半導體股份有限公司 異質接面雙極電晶體佈局結構
US8994075B1 (en) * 2013-10-11 2015-03-31 Rf Micro Devices, Inc. Heterojunction bipolar transistor geometry for improved power amplifier performance
US20160020307A1 (en) * 2014-07-16 2016-01-21 Win Semiconductors Corp. Heterojunction Bipolar Transistor
US20160141220A1 (en) * 2014-11-18 2016-05-19 Sumitomo Electric Industries, Ltd. Hetero-bipolar transistor and method for producing the same
WO2016132594A1 (ja) * 2015-02-17 2016-08-25 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ
TWI585907B (zh) * 2016-05-13 2017-06-01 穩懋半導體股份有限公司 化合物半導體積體電路之先進抗濕氣結構

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