SG11202003686WA - Emitter-base mesh structure in heterojunction bipolar transistors for rf applications - Google Patents

Emitter-base mesh structure in heterojunction bipolar transistors for rf applications

Info

Publication number
SG11202003686WA
SG11202003686WA SG11202003686WA SG11202003686WA SG11202003686WA SG 11202003686W A SG11202003686W A SG 11202003686WA SG 11202003686W A SG11202003686W A SG 11202003686WA SG 11202003686W A SG11202003686W A SG 11202003686WA SG 11202003686W A SG11202003686W A SG 11202003686WA
Authority
SG
Singapore
Prior art keywords
emitter
applications
mesh structure
bipolar transistors
heterojunction bipolar
Prior art date
Application number
SG11202003686WA
Other languages
English (en)
Inventor
Ranadeep Dutta
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of SG11202003686WA publication Critical patent/SG11202003686WA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
SG11202003686WA 2017-12-07 2018-11-07 Emitter-base mesh structure in heterojunction bipolar transistors for rf applications SG11202003686WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/834,100 US20190181251A1 (en) 2017-12-07 2017-12-07 Mesh structure for heterojunction bipolar transistors for rf applications
PCT/US2018/059532 WO2019112741A1 (en) 2017-12-07 2018-11-07 Emitter-base mesh structure in heterojunction bipolar transistors for rf applications

Publications (1)

Publication Number Publication Date
SG11202003686WA true SG11202003686WA (en) 2020-06-29

Family

ID=64477288

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202003686WA SG11202003686WA (en) 2017-12-07 2018-11-07 Emitter-base mesh structure in heterojunction bipolar transistors for rf applications

Country Status (9)

Country Link
US (1) US20190181251A1 (https=)
EP (1) EP3721477A1 (https=)
JP (1) JP7201684B2 (https=)
KR (1) KR102645071B1 (https=)
CN (1) CN111448665B (https=)
BR (1) BR112020011108B1 (https=)
SG (1) SG11202003686WA (https=)
TW (1) TWI813598B (https=)
WO (1) WO2019112741A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020257974A1 (zh) * 2019-06-24 2020-12-30 华为技术有限公司 异质结双极型晶体管及其制备方法
JP2021048250A (ja) * 2019-09-18 2021-03-25 株式会社村田製作所 半導体装置
JP2021132100A (ja) * 2020-02-19 2021-09-09 株式会社村田製作所 高周波電力増幅素子
CN113594239B (zh) * 2021-07-20 2022-09-27 弘大芯源(深圳)半导体有限公司 一种具有网格结构的双极功率晶体管
CN113921598B (zh) * 2021-08-25 2023-06-20 厦门市三安集成电路有限公司 一种hbt器件的金属连线方法

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Also Published As

Publication number Publication date
KR20200090174A (ko) 2020-07-28
US20190181251A1 (en) 2019-06-13
EP3721477A1 (en) 2020-10-14
TWI813598B (zh) 2023-09-01
JP7201684B2 (ja) 2023-01-10
BR112020011108B1 (pt) 2024-01-23
KR102645071B1 (ko) 2024-03-06
CN111448665A (zh) 2020-07-24
CN111448665B (zh) 2024-04-16
TW201937729A (zh) 2019-09-16
BR112020011108A2 (pt) 2020-11-17
JP2021506114A (ja) 2021-02-18
WO2019112741A1 (en) 2019-06-13

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