CN110249074B - 半导体元件及其制造方法 - Google Patents
半导体元件及其制造方法 Download PDFInfo
- Publication number
- CN110249074B CN110249074B CN201880010334.3A CN201880010334A CN110249074B CN 110249074 B CN110249074 B CN 110249074B CN 201880010334 A CN201880010334 A CN 201880010334A CN 110249074 B CN110249074 B CN 110249074B
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- electroless
- plating layer
- side electrode
- nickel
- phosphorus
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- 238000000034 method Methods 0.000 title claims description 57
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- 238000007747 plating Methods 0.000 claims abstract description 279
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims abstract description 170
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- 239000010931 gold Substances 0.000 claims abstract description 111
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000007772 electroless plating Methods 0.000 claims abstract description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 110
- 238000011282 treatment Methods 0.000 claims description 71
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- 238000005530 etching Methods 0.000 claims description 28
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- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
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- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
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- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
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- 239000002184 metal Substances 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
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- 101100065700 Caenorhabditis elegans etc-1 gene Proteins 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 238000006864 oxidative decomposition reaction Methods 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
提供一种在具有表侧电极以及背侧电极的表背导通型基板的至少单侧的电极上形成有非电解镀层的半导体元件。非电解镀层具有非电解镍磷镀层和形成于非电解镍磷镀层上的非电解镀金层,在非电解镀的作为被焊料接合的面的表面形成有多个凹部。
Description
技术领域
本发明涉及半导体元件及其制造方法。详细而言,本发明涉及表背导通型的半导体元件、特别涉及以IGBT(绝缘栅极型双极性晶体管)、二极管等为代表的电力变换用的功率半导体元件及其制造方法。
背景技术
以往,在将表背导通型的半导体元件安装到模块的情况下,半导体元件的背侧电极被焊接到基板等,半导体元件的表侧电极被引线键合。然而,近年来,根据制造时间缩短以及材料费用削减的观点,使用对半导体元件的表侧电极直接焊接金属电极的安装方法的情形变多。半导体元件的表侧电极一般由铝或者铝合金形成,所以为了进行焊接,需要在半导体元件的表侧电极上形成镍膜、金膜等。
镍膜在焊接时与锡系列的焊料反应而减少,所以需要使镍膜以几μm等级厚膜化。然而,在使用如蒸镀或者溅射的真空成膜方式的情况下,通常最大只能得到1.0μm程度的厚度。另外,如果想要使镍膜过度厚膜化,则制造成本上升。因此,作为能够实现低成本且高速并且厚膜化的成膜方法,镀敷技术得到关注。
作为镀敷技术,有能够仅在由铝或者铝合金形成的电极(以下简称为“Al电极”)表面选择性地形成镀层的非电解镀敷法。作为非电解镀敷法,一般利用钯催化法以及锌酸盐(zincate)法。
在钯催化法中,在Al电极的表面使钯作为催化核析出,形成非电解镀层。关于钯法,Al电极的蚀刻量少且非电解镀层的表面的平滑性良好,但另一方面,钯是贵金属,所以制造成本上升。
另外,在锌酸盐法中,通过在Al电极的表面使锌与Al置换而作为催化核析出,形成非电解镀层。在该方法中使用的锌酸盐液廉价,所以得到广泛采用。
实际上,在专利文献1中,提出了在半导体元件的Al电极的表面通过锌酸盐法选择性地形成镀镍层以及镀金层。
现有技术文献
专利文献
专利文献1:日本特开2005-51084号公报
发明内容
在将表背导通型的半导体元件安装到模块的情况下,在常温下在基板上载置焊料,并在其上进而载置半导体元件之后,在回流炉中进行加热,从而半导体元件的背侧电极被焊接到基板。此时,焊料中的助焊剂、形成于电极的镀敷膜中包含的氢或者水分等形成为气体。在这些气体原样地残存于焊料内部时,成为空穴(空隙)。焊料内部的空穴阻碍电气传导或者热传导,所以成为产生半导体元件的动作不良的原因。为了去除焊料内部的空穴,虽然需要在焊接时对半导体元件提供微振动等,但在将多个半导体元件安装到基板上的情况下,需要复杂的装置,而且生产性也降低。
本发明是为了解决如上述的问题而完成的,其目的在于提供一种在通过焊接来安装时能够抑制在焊料内部发生空穴的半导体元件及其制造方法。
本发明人为了解决如上述的问题而专心研究的结果,发现通过在非电解镀层的表面形成凹部,能够易于使在焊料内部产生的成为空穴的原因的气体排出到外部,完成本发明。
即,本发明提供一种半导体元件,在具有表侧电极以及背侧电极的表背导通型基板的至少单侧的电极上形成有非电解镀层,所述半导体元件的特征在于,所述至少单侧的电极的表面平坦,所述非电解镀层具有形成于所述至少单侧的电极上的非电解镍磷镀层和形成于所述非电解镍磷镀层上的非电解镀金层,在所述非电解镀层的作为被焊料接合的面的表面形成有凹部。
另外,本发明提供一种半导体元件的制造方法,其特征在于,包括:向表背导通型基板形成表侧电极及背侧电极的工序;以及针对所述表侧电极及所述背侧电极的至少单侧的电极依次形成非电解镍磷镀层及非电解镀金层的工序,在所述至少单侧的电极上形成非电解镍磷镀层时,一边使从由非电解镍磷镀敷液的镍浓度、pH、温度以及搅拌速度构成的群选择的至少1个增大,一边进行非电解镍磷镀敷处理。
另外,本发明提供一种半导体元件的制造方法,其特征在于,包括:向表背导通型基板形成表侧电极及背侧电极的工序;以及针对所述表侧电极及所述背侧电极的至少单侧的电极依次形成非电解镍磷镀层及非电解镀金层的工序,在所述至少单侧的电极上形成非电解镍磷镀层时,一边使摇动速度以及摇动幅度的至少1个变化,一边进行非电解镍磷镀敷处理。
另外,本发明提供一种半导体元件的制造方法,其特征在于,包括:向表背导通型基板形成表侧电极及背侧电极的工序;以及针对所述表侧电极及所述背侧电极的至少单侧的电极依次形成非电解镍磷镀层及非电解镀金层的工序,在所述至少单侧的电极上形成非电解镍磷镀层之后,对所述非电解镍磷镀层的表面进行蚀刻处理。
进而,本发明提供一种半导体元件的制造方法,其特征在于,包括:向表背导通型基板形成表侧电极及背侧电极的工序;以及针对所述表侧电极及所述背侧电极的至少单侧的电极依次形成非电解镍磷镀层及非电解镀金层的工序,在形成所述非电解镀金层时,一边使非电解镀金液的金浓度增加一边进行非电解镀金处理。
根据本发明,其目的在于提供一种在通过焊接来安装时能够抑制在焊料内部发生空穴的半导体元件及其制造方法。
附图说明
图1是实施方式1的半导体元件的概略剖面图。
图2是实施方式1的半导体元件的概略俯视图。
图3是将实施方式1的半导体元件用焊料接合到散热基板以及外部端子之后的半导体元件的概略剖面图。
图4是实施方式2的半导体元件的概略剖面图。
图5是实施方式5的半导体元件的概略剖面图。
(符号说明)
1:半导体元件;2:表背导通型基板;3a:表侧电极;3b:背侧电极;4:非电解镀层;5:非电解镍磷镀层;6:非电解镀金层;7:凹部;8:保护膜;9:焊料;10:散热基板;11:外部端子。
具体实施方式
以下,使用附图,说明本发明的半导体元件及其制造方法的优选的实施方式。
实施方式1.
图1是本实施方式的半导体元件的概略剖面图。图2是本实施方式的半导体元件的概略俯视图。
在图1以及图2中,本实施方式的半导体元件1包括表背导通型基板2;表侧电极3a,形成于表背导通型基板2的一方的主面(表面);背侧电极3b,形成于表背导通型基板2的另一方的主面(背面);以及非电解镀层4,形成于表侧电极3a及背侧电极3b上。非电解镀层4具有:非电解镍磷镀层5,形成于表侧电极3a及背侧电极3b上;以及非电解镀金层6,形成于非电解镍磷镀层5上,并且在其表面形成有多个凹部7。另外,在未形成非电解镀层4的表侧电极3a上,设置有保护膜8。
在此,在本说明书中,“凹部7”是指,相对非电解镀层4的最表面具有凹陷的部分。
作为表背导通型基板2,没有特别限定,能够使用Si基板、SiC基板、GaAs基板、GaN基板等在该技术领域中公知的半导体基板。表背导通型基板2具有扩散层(未图示),具备PN结、栅电极等掌控半导体元件1的动作的功能。
作为表侧电极3a以及背侧电极3b,没有特别限定,能够由铝或者铝合金等在该技术领域中公知的材料形成。
作为铝合金,没有特别限定,优选含有比铝贵的元素。通过含有比铝贵的元素,在通过锌酸盐法进行非电解镍磷镀敷时,电子易于从在该元素的周围存在的铝流出,所以铝的溶解被促进。而且,在铝溶解的部分中锌集中地析出,成为非电解镍磷镀层5的形成的起点的锌的析出量变多,所以易于形成非电解镍磷镀层5。
作为比铝贵的元素,没有特别限定,例如,可以举出铁、镍、锡、铅、硅、铜、银、金、钨、钴、铂、钯、铱、铑等。在这些元素中,优选的是铜、硅、铁、镍、银、金。另外,这些元素能够单独或者组合2种以上来使用。
铝合金中的比铝贵的元素的含有量没有特别限定,优选为5质量%以下,更优选为0.05质量%以上且3质量%以下,进一步优选为0.1质量%以上且2质量%以下。
表侧电极3a的厚度没有特别限定,一般为1μm以上且8μm以下,优选为2μm以上且7μm以下,更优选为3μm以上且6μm以下。在表侧电极3a的表面,有时由于PN结、栅电极等具有掌控半导体元件1的动作的功能的内部电极而产生凹凸。为了使表侧电极3a的表面平坦化,优选在用溅射法等形成由铝或者铝合金构成的表侧电极3a之后,将铝或者铝合金加热至熔点附近而熔融。形成非电解镍磷镀层5的表侧电极3a的表面的平坦度用Ra值表示优选为0.005μm以上且0.15μm以下,更优选为0.01μm以上且0.03μm以下。
在此,在本说明书中,将“平坦度”设为通过表面触针式的表面粗糙度计或者表面触针式的台阶仪测定的值。
背侧电极3b的厚度没有特别限定,一般为0.1μm以上且4μm以下,优选为0.5μm以上且3μm以下,更优选为0.8μm以上且2μm以下。形成非电解镍磷镀层5的背侧电极3b的表面的平坦度用Ra值表示优选为0.005μm以上且0.15μm以下,更优选为0.01μm以上且0.03μm以下。
形成于表侧电极3a以及背侧电极3b上的非电解镍磷镀层5没有特别限定,能够使用各种组成的非电解镍磷镀层。另外,非电解镍磷镀层5可以为单一组成的非电解镍磷镀层5,但也可以是镍浓度不同的多个非电解镍磷镀层5。例如,能够将非电解镍磷镀层5设为镍浓度不同的2个以上的层。
非电解镍磷镀层5中的镍浓度没有特别限定,一般为85质量%以上,优选为88质量%以上且99质量%以下,更优选为90质量%以上且98质量%以下。
形成于表侧电极3a以及背侧电极3b上的非电解镍磷镀层5的厚度没有特别限定,一般为2μm以上且10μm以下,优选为3μm以上且9μm以下,更优选为4μm以上且8μm以下。
形成于非电解镍磷镀层5上的非电解镀金层6的厚度没有特别限定,一般为0.1μm以下,优选为0.01μm以上且0.08μm以下,更优选为0.015μm以上且0.05μm以下。
作为形成于非电解镀层4的表面的凹部7的形状,没有特别限定,可以是各种形状。从上方观察该凹部7时的形状优选为圆。圆的直径优选小,具体而言,圆的平均直径优选为0.05μm以下,更优选为0.008μm以上且0.015μm以下。关于凹部7的密度,在非电解镀层4的表面的每100μm2面积中,优选为10个以上且100个以下,更优选为15个以上且50个以下。此外,这些结果是通过实验得到的。从易于将在焊接时发生的气体排出到外部的观点来看,形成于非电解镀层4的表面的凹部7的深度(高低差)优选为0.05μm以上且1.5μm以下,更优选为0.1μm以上且1.3μm以下。在凹部7的深度小于0.05μm时,有时难以将在焊接时发生的气体排出到外部。另一方面,在凹部7的深度超过1.5μm时,有时焊接变得困难。
在此,在本说明书中,“凹部7的深度”意味着凹部7的最底部相对非电解镀层4的最表面的深度。
作为保护膜8,没有特别限定,能够使用在该技术领域中公知的保护膜。作为保护膜8的例子,可以举出耐热性优良的、包含聚酰亚胺、硅等的玻璃系列的膜。
关于具有如上述的构造的半导体元件1,除了在非电解镀层4的表面形成凹部7的工序以外,能够依照在该技术领域中公知的方法制造。
作为在非电解镀层4的表面形成凹部7的方法,没有特别限定,以在非电解镍磷镀层5的表面形成凹部7的方式调整各种镀敷处理的条件、或者在部分性地形成镍浓度高的非电解镍磷镀层5之后将该部分用镀金置换而优先地去除、或者、在形成非电解镍磷镀层5之后通过机械性的手段或者化学性的手段在非电解镍磷镀层5形成凹部7即可。作为机械性的手段,可以举出使用针等的机械性加工等,作为化学性的手段,可以举出蚀刻处理等。
在蚀刻处理中,使非电解镍磷镀层5与蚀刻液接触即可。
作为蚀刻液,只要是能够对非电解镍磷镀层5进行蚀刻的蚀刻液,则没有特别限定,能够使用在该技术领域中公知的蚀刻液。作为蚀刻液的例子,可以举出包含硝酸、盐酸、蚁酸、草酸等酸的溶液。在其中,包含蚁酸或者草酸等羧酸的蚀刻液由于不易使非电解镍磷镀层5的厚度降低并且易于形成凹部7,所以是优选的。
关于蚀刻液中的酸的浓度,根据使用的酸适当地设定即可,一般为10质量%以上且30质量%以下,优选为15质量%以上且25质量%以下。
关于蚀刻处理时的蚀刻液的温度以及蚀刻时间,根据使用的蚀刻液适当地设定即可。
其他工序一般如下所述进行。
首先,在表背导通型基板2形成表侧电极3a以及背侧电极3b。作为在表背导通型基板2形成表侧电极3a以及背侧电极3b的方法,没有特别限定,能够依照在该技术领域中公知的方法形成。
接下来,针对表侧电极3a以及背侧电极3b这两方,同时依次形成非电解镍磷镀层5以及非电解镀金层6。该工艺一般通过等离子体清洁工序、脱脂工序、酸洗工序、第1锌酸盐处理工序、锌酸盐剥离工序、第2锌酸盐处理工序、非电解镍磷镀敷处理工序、以及非电解镀金处理工序进行。应在各工序之间,进行充分的水洗,防止前一工序的处理液或者残渣被带入到下一工序。
在等离子体清洁工序中,对形成于表背导通型基板2的表侧电极3a以及背侧电极3b进行等离子体清洁。等离子体清洁是通过用等离子体氧化分解等而去除强固地附着到表侧电极3a以及背侧电极3b的有机物残渣、氮化物或者氧化物并为了确保表侧电极3a以及背侧电极3b与镀敷的前处理液或者镀敷液的反应性而进行的。针对表侧电极3a以及背侧电极3b这两方进行等离子体清洁,但优选针对表侧电极3a重点地进行。另外,作为等离子体清洁的顺序,没有特别限定,优选在对背侧电极3b进行等离子体清洁之后,对表侧电极3a进行等离子体清洁。其理由在于,在半导体元件1的表侧存在表侧电极3a而且存在由有机物构成的保护膜8,该保护膜8的残渣附着到表侧电极3a的情形较多。
在脱脂工序中,进行表侧电极3a以及背侧电极3b的脱脂。为了去除附着于表侧电极3a以及背侧电极3b的表面的少量的有机物、油脂含量、氧化膜,进行脱脂。一般,针对表侧电极3a以及背侧电极3b,使用蚀刻力强的碱性的药液进行脱脂。通过脱脂工序,油脂含量被皂化。另外,关于未被皂化的物质,碱可溶的物质溶解到该药液,碱不可溶的物质通过表侧电极3a以及背侧电极3b的蚀刻被剥离。
在酸洗工序中,对表侧电极3a以及背侧电极3b进行酸洗。为了使表侧电极3a以及背侧电极3b的表面中和并且通过蚀刻来粗糙化,提高后工序中的处理液的反应性,提高镀敷的附着力,进行酸洗。
在第1锌酸盐处理工序中,对表侧电极3a以及背侧电极3b进行锌酸盐处理。
在此,锌酸盐处理是指,在对表侧电极3a以及背侧电极3b的表面进行蚀刻来去除氧化膜的同时形成锌的覆膜的处理。一般,在锌溶解的水溶液(锌酸盐处理液)中浸渍表侧电极3a以及背侧电极3b时,相比于构成表侧电极3a以及背侧电极3b的铝或者铝合金,锌的标准氧化还原电位更富,所以铝作为离子溶解。通过此时产生的电子,锌离子在表侧电极3a以及背侧电极3b的表面接受电子,在表侧电极3a以及背侧电极3b的表面形成锌的覆膜。
在锌酸盐剥离工序中,将在表面形成有锌的覆膜的表侧电极3a以及背侧电极3b浸渍到硝酸,使锌溶解。
在第2锌酸盐处理工序中,将通过锌酸盐剥离工序得到的表侧电极3a以及背侧电极3b再次浸渍到锌酸盐处理液。由此,在去除铝以及其氧化膜的同时,在表侧电极3a以及背侧电极3b的表面形成锌的覆膜。
进行上述锌酸盐剥离工序以及第2锌酸盐处理工序的理由是为了使表侧电极3a以及背侧电极3b的表面平滑。此外,锌酸盐处理工序以及锌酸盐剥离工序的反复次数越增加,表侧电极3a以及背侧电极3b的表面变得越平滑,形成均匀的非电解镍磷镀层5以及非电解镀金层6。
但是,在考虑表面平滑性和生产性的平衡时,优选进行2次锌酸盐处理,更优选进行3次。
在非电解镍磷镀敷处理工序中,通过将形成有锌的覆膜的表侧电极3a以及背侧电极3b浸渍到非电解镍磷镀敷液,形成非电解镍磷镀层5。
作为非电解镍磷镀敷液,没有特别限定,能够使用在该技术领域中公知的非电解镍磷镀敷液。
非电解镍磷镀敷液的镍浓度没有特别限定,一般为1.0g/L以上且10.0g/L以下,优选为2g/L以上且8.0g/L以下,更优选为3g/L以上且6.0g/L以下。
非电解镍磷镀敷液的氢离子浓度(pH)没有特别限定,一般为4.0以上且6.0以下,优选为4.5以上且5.5以下。
在进行非电解镍磷镀敷处理时,从镀敷效率的观点来看,也可以使被镀敷物上下摇动。此时的摇动速度没有特别限定,优选为10mm/分钟以上且500mm/分钟以下,优选为30mm/分钟以上且400mm/分钟以下,更优选为50mm/分钟以上且300mm/分钟以下。另外,摇动幅度也没有特别限定,一般为10mm以上且500mm以下,优选为30mm以上且300mm以下,更优选为50mm以上且200mm以下。
关于非电解镍磷镀敷液的温度,根据非电解镍磷镀敷液的种类以及镀敷条件等适当地设定即可,一般为50℃以上且100℃以下,优选为60℃以上且95℃以下,更优选为70℃以上且90℃以下。
关于镀敷时间,根据镀敷条件以及非电解镍磷镀层5的厚度等适当地设定即可,一般为5分钟以上且60分钟以下,优选为10分钟以上且50分钟以下,更优选为15分钟以上且40分钟以下。
在将形成有锌的覆膜的表侧电极3a以及背侧电极3b浸渍到非电解镍磷镀敷液时,最初,相比于镍,锌的标准氧化还原电位更贫,所以镍在表侧电极3a以及背侧电极3b上析出。接下来,在表面被镍覆盖时,通过包含于非电解镍磷镀敷液的还原剂的作用,镍自催化地析出。在该自催化的析出时,还原剂(次磷酸)的成分被取入到镀敷膜,所以形成作为合金的非电解镍磷镀层5。另外,在还原剂的浓度高时,非电解镍磷镀层5成为非晶。另外,在非电解镍磷镀敷处理中始终持续发生氢气,所以氢被吸藏到非电解镍磷镀层5。
在非电解镀金处理工序中,通过对形成有非电解镍磷镀层5的表侧电极3a以及背侧电极3b进行非电解镀金处理,形成非电解镀金层6。非电解镀金处理一般通过被称为置换型的方法来进行。通过包含于非电解镀金液的络化剂的作用,非电解镍磷镀层5的镍和金置换,从而进行置换型的非电解镀金处理。
作为非电解镀金液,没有特别限定,能够使用在该技术领域中公知的非电解镀金液。非电解镀金液中的金浓度没有特别限定,一般为1.0g/L以上且5g/L以下,优选为1.2g/L以上且4g/L以下,更优选为1.5g/L以上且3g/L以下。
非电解镀金液的pH没有特别限定,一般为6.0以上且7.0以下。
关于非电解镀金液的温度,根据非电解镀金液的种类以及镀敷条件等适当地设定即可,一般为50℃以上且100℃以下,优选为70℃以上且100℃以下,更优选为80℃以上且95℃以下。
关于镀敷时间,根据镀敷条件以及非电解镀金层6的厚度等适当地设定,一般为5分钟以上且60分钟以下,优选为10分钟以上且50分钟以下,更优选为15分钟以上且40分钟以下。
此外,关于非电解镀金处理,在非电解镍磷镀层5的表面被金覆盖时,反应停止,所以难以使非电解镀金层6变厚。因此,形成的非电解镀金层6的厚度最大为0.08μm、一般为0.05μm程度。但是,在用作焊接用的情况下,非电解镀金层6的厚度即便是上述值也不会过小。
图3是将上述半导体元件1的非电解镀层4与散热基板10以及外部端子11用焊料9接合后的半导体元件的概略剖面图。焊料9没有特别限定,能够使用在该技术领域中公知的焊料,例如锡银铜焊料。焊料的厚度优选为0.1μm以上且5μm以下,更优选为1μm以上且3μm以下。散热基板10能够使用在该技术领域中公知的散热基板。外部端子11优选为电气电阻低且廉价的金属,更优选为由铜或者铜合金构成的外部端子。
这样具有如上述的构造的半导体元件1由于在非电解镀层4的表面形成有凹部7,所以在通过焊接将半导体元件1安装到模块时发生的气体易于通过凹部7排出到外部,能够抑制在焊料内部发生空穴。
实施方式2.
在实施方式2中,说明适合于实施方式1的半导体元件1的制造的方法。
本实施方式的制造方法的基本的工序与实施方式1的制造方法相同,所以仅说明不同点。
在非电解镀金处理中,非电解镍磷镀层5中的镍溶解到非电解镀金液,通过镍和金的置换,形成非电解镀金层6。此时,非电解镍磷镀层5的镍浓度越高,非电解镍磷镀层5中的镍的溶解量越大。而且,非电解镍磷镀层5中的镍的溶解量越多,在非电解镍磷镀层5的表面越易于形成凹部7。
为了提高非电解镍磷镀层5的镍浓度,调整非电解镍磷镀敷处理的条件即可。具体而言,能够通过在非电解镍磷镀敷处理中使用的非电解镍磷镀敷液的镍浓度、氢离子浓度(pH)、温度、搅拌速度等各种条件,调整非电解镍磷镀层5的镍浓度。例如,通过提高非电解镍磷镀敷液的镍浓度、氢离子浓度(pH)、温度、搅拌速度,能够提高非电解镍磷镀层5的镍浓度。
因此,在本实施方式的半导体元件1的制造方法中,在表侧电极3a以及背侧电极3b上使用锌酸盐法来形成非电解镍磷镀层5时,一边使从由非电解镍磷镀敷液的镍浓度、pH、温度以及搅拌速度构成的群选择的至少1个增大,一边进行非电解镍磷镀敷处理。
在此,在本实施方式的半导体元件1的制造方法中,通过在非电解镍磷镀敷处理的途中使从由非电解镍磷镀敷液的镍浓度、pH、温度以及搅拌速度构成的群选择的至少1个条件增大1次而制造的半导体元件1的概略剖面图如图4所示。在该半导体元件1中,形成有具有镍浓度不同的二层构造的非电解镍磷镀层5,非电解镀金层6侧的非电解镍磷镀层5的镍浓度高于表侧电极3a以及背侧电极3b侧的非电解镍磷镀层5的镍浓度。此外,在图4中,基于易于理解的观点明确地区分了两层构造,但在两层相接的附近的区域中,镍浓度从表侧电极3a以及背侧电极3b侧朝向非电解镀金层6侧依次变高,所以应注意两层的区别有时不明确。
作为非电解镀金层6侧的非电解镍磷镀层5的镍浓度,没有特别限定,优选为94质量%以上且99质量%以下,更优选为95质量%以上且98质量%以下。
另外,作为表侧电极3a以及背侧电极3b侧的非电解镍磷镀层5的镍浓度,没有特别限定,优选为90质量%以上且小于94质量%,更优选为91质量%以上且小于93质量%。
作为非电解镀金层6侧的非电解镍磷镀层5的厚度,没有特别限定,优选为2.0μm以上且7.0μm以下,更优选为2.5μm以上且6.0μm以下。
另外,作为表侧电极3a以及背侧电极3b侧的非电解镍磷镀层5的厚度,没有特别限定,优选为1.5μm以上且7.0μm以下,更优选为2.0μm以上且6.0μm以下。
在制造具有图4的构造的半导体元件1的情况下,例如为了形成表侧电极3a以及背侧电极3b侧的非电解镍磷镀层5,将非电解镍磷镀敷液的镍浓度调整为4.0g/L以上且5.0g/L以下,将pH调整为4.0以上且5.0以下,同时,为了形成非电解镀金层6侧的非电解镍磷镀层5,将非电解镍磷镀敷液的镍浓度调整为5.0g/L以上且6.0g/L以下,将pH调整为5.0以上且6.0以下即可。
根据本实施方式的半导体元件1的制造方法,通过控制在非电解镍磷镀敷处理中使用的非电解镍磷镀敷液的镍浓度、氢离子浓度(pH)、温度、搅拌速度等各种条件,能够在表面形成镍浓度高的非电解镍磷镀层5,在进行非电解镀金处理时能够在非电解镍磷镀层5的表面形成凹部7,所以无需另外设置在非电解镍磷镀层5的表面形成凹部7的工序(例如利用机械性手段或者化学性手段的处理工序)。
实施方式3.
在实施方式3中,说明适合于实施方式1的半导体元件1的制造的方法。
本实施方式的制造方法的基本的工序与实施方式1的制造方法相同,所以仅说明区别点。
在非电解镍磷镀敷处理中产生氢气,所以氢气的气泡附着到析出的非电解镍磷镀层5的表面。该氢气的气泡在微观上使非电解镍磷镀层5的析出效率降低,所以氢气的气泡所附着的部分相比于氢气的气泡未附着的部分,形成的非电解镍磷镀层5的厚度易于降低。
鉴于如上述的观点,在本实施方式的半导体元件1的制造方法中,在表侧电极3a以及背侧电极3b上使用锌酸盐法来形成非电解镍磷镀层5时,一边使摇动速度以及摇动幅度的至少1个变化,一边进行非电解镍磷镀敷处理。
通过这样使摇动速度以及摇动幅度的至少1个变化,能够控制非电解镍磷镀层5的析出量,所以易于在非电解镍磷镀层5的表面形成凹部7。
在制造本实施方式的半导体元件1的情况下,在例如非电解镍磷镀敷处理的途中使摇动速度以及摇动幅度的至少1个变化1次以上即可。例如,也可以通过反复进行/停止摇动而使摇动速度以及摇动幅度变化。此时,在摇动的停止(OFF)时间过长的情况下,非电解镍磷镀层5针对表侧电极3a以及背侧电极3b的密接性下降,非电解镍磷镀层5有时易于剥离。因此,从确保非电解镍磷镀层5针对表侧电极3a以及背侧电极3b的密接性的观点来看,摇动的停止(OFF)时间优选小于3分钟,更优选为2分钟以下,进一步优选为1分钟以下。
作为摇动速度的变化量,没有特别限定,一般为50mm/分钟以上且500mm/分钟以下,优选为100mm/分钟且400mm/分钟以下,更优选为200mm/分钟以上且300mm/分钟以下。另外,作为摇动幅度的变化量,没有特别限定,一般为10mm以上且300mm以下,优选为30mm以上且200mm以下,更优选为50mm以上且100mm以下。
根据本实施方式的半导体元件1的制造方法,通过控制非电解镍磷镀敷处理时的摇动速度以及摇动幅度的至少1个,能够在非电解镍磷镀层5的表面形成凹部7,所以无需另外设置在非电解镍磷镀层5的表面形成凹部7的工序(例如利用机械性手段或者化学性手段的处理工序)。
实施方式4.
在实施方式4中,说明适合于实施方式1的半导体元件1的制造的方法。
本实施方式的制造方法的基本的工序与实施方式1的制造方法相同,所以仅说明不同点。
在非电解镀金处理中,非电解镍磷镀层5中的镍溶解到非电解镀金液,通过镍和金的置换,形成非电解镀金层6。因此,通过一边控制非电解镀金液的金浓度一边进行非电解镀金处理,能够通过非电解镀金处理进行非电解镍磷镀层5的蚀刻处理和非电解镀金层6的形成。
鉴于如上述的观点,在本实施方式的半导体元件1的制造方法中,在形成非电解镀金层6时,一边使非电解镀金液的金浓度增加一边进行非电解镀金处理。例如,使用金浓度不同的2种非电解镀金液,在使用金浓度低的一方的非电解镀金液进行非电解镀金处理之后,使用金浓度高的另一方的非电解镀金液进行非电解镀金处理即可。也可以代替金浓度低的一方的非电解镀金液而使用金浓度为零的镍蚀刻液来进行蚀刻处理。
通过进行这样的非电解镀金处理,通过使用金浓度为零的镍蚀刻液的蚀刻处理或者使用金浓度低的非电解镀金液的非电解镀金处理,在非电解镍磷镀层5的表面主要形成凹部7,通过使用金浓度高的非电解镀金液的非电解镀金处理,在非电解镍磷镀层5的表面形成非电解镀金层6。
作为金浓度低的非电解镀金液的具体的金浓度,没有特别限定,一般为0.5g/L以下,优选为0.4g/L以下,更优选为0.3g/L以下。另外,作为金浓度高的非电解镀金液的具体的金浓度,没有特别限定,一般为1.0g/L以上且5g/L以下,优选为1.2g/L以上且4g/L以下,更优选为1.5g/L以上且3g/L以下。
根据本实施方式的半导体元件1的制造方法,通过控制在非电解镀金处理中使用的非电解镀金液的金浓度,能够一并进行非电解镍磷镀层5的蚀刻处理和非电解镀金层6的形成,所以无需另外设置在非电解镍磷镀层5的表面形成凹部7的工序(例如利用机械性手段或者化学性手段的处理工序)。
实施方式5.
图5是实施方式5的半导体元件的概略剖面图。
在图5中,本实施方式的半导体元件1包括:表背导通型基板2;表侧电极3a,形成于表背导通型基板2的一个主面(表面);背侧电极3b,形成于表背导通型基板2的另一个主面(背面);以及非电解镀层4,形成于表侧电极3a上。非电解镀层4具有:非电解镍磷镀层5,形成于表侧电极3a上;以及非电解镀金层6,形成于非电解镍磷镀层5上,并且在非电解镀层4的表面形成有多个凹部7。另外,在未形成非电解镀层4的表侧电极3a上设置有保护膜8。即,本实施方式的半导体元件1除了在背侧电极3b上未形成非电解镀层4以外,与实施方式1的半导体元件1的结构相同。在本实施方式中,仅在表侧电极3a上形成有具有多个凹部7的非电解镀层4。本实施方式的制造方法的基本的工序与实施方式1的制造方法相同,所以仅说明不同点。
在进行各镀敷处理之前,向背侧电极3b粘贴保护薄膜以避免背侧电极3b与镀敷液接触。在形成非电解镀层4之后,使半导体元件1干燥,剥离保护薄膜即可。此外,保护薄膜没有特别限定,能够使用镀敷工序的保护用的紫外线剥离用带。
此外,上述各实施方式的半导体元件1既可以通过针对通过切割半导体晶片而得到的芯片(表背导通型基板2)进行各镀敷处理来制造,或者,也可以根据生产性等观点在针对半导体晶片进行各镀敷处理之后通过切割来制造。特别是,近年来,根据半导体元件1的电气特性的改善的观点,要求表背导通型基板2的厚度降低,如果不是外周部的厚度比中心部大的半导体晶片,则有时难以处理。即使是这样的中心部和外周部的厚度不同的半导体晶片,通过使用上述各镀敷处理,也能够形成期望的镀敷膜。
实施例
以下,通过实施例详细说明本发明,但本发明不限定于这些。
(实施例1)
在实施例1中,制作出了具有图4所示的构造的半导体元件1。
首先,作为表背导通型基板2,准备了Si基板(14mm×14mm×70μm)。
接下来,在Si基板的表面,形成作为表侧电极3a的铝合金电极(厚度5.0μm)以及保护膜8,在Si基板的背面,形成作为背侧电极3b的铝合金电极(厚度1.0μm)。表侧电极3a的表面的平坦度用Ra值表示是0.025μm,背侧电极3b的表面的平坦度用Ra值表示是0.015μm。
接下来,通过在下述的表1以及表2所示的条件下进行各工序,得到半导体元件1。此外,在各工序之间,进行了使用纯水的水洗。
[表1]
工序 | 项目 | 条件等 |
1 | 等离子体清洁 | Ar(100cc/分钟)、800W、2分钟、真空度10Pa |
2 | 脱脂 | 碱性脱脂液、pH9.5、70℃、3分钟 |
3 | 酸洗 | 10%硫酸、30℃、1分钟 |
4 | 第1锌酸盐处理 | 碱性锌酸盐处理液、pH12、25℃、20秒 |
5 | 锌酸盐剥离 | 硝酸、25℃、15秒 |
6 | 第2锌酸盐处理 | 碱性锌酸盐处理液、pH12、25℃、20秒 |
7 | 非电解镍磷镀敷处理 | 酸性非电解镍磷镀敷液、镀敷处理条件记载于表2 |
8 | 非电解镀金处理 | 酸性非电解镀金液、pH6.5、90℃、30分钟 |
[表2]
使用市面销售的荧光X射线膜厚测定装置,测定了形成于表侧电极3a以及背侧电极3b上的非电解镍磷镀层5以及非电解镀金层6的厚度。其结果,在所有样品中,非电解镀金层6的厚度是0.03μm。另外,关于非电解镍磷镀层5的厚度的结果,如表3所示。
另外,关于非电解镍磷镀层5的镍浓度,在使非电解镍磷镀层5溶解到包含酸或者碱的水之后,使用ICP测定。表3示出其结果。
进而,使用光学显微镜或者激光显微镜来确认有无形成于由非电解镍磷镀层5以及非电解镀金层6构成的非电解镀层4的表面的凹部7,并且根据镜筒对焦的位置的变化量测定了其深度。表3示出这些结果。
[表3]
如表3所示,一边使非电解镍磷镀敷液的镍浓度和/或pH增大一边进行非电解镍磷镀敷处理的样品No.1-2~1-5中,在非电解镀层4的表面形成有凹部7,相对于此,在使非电解镍磷镀敷液的镍浓度以及pH恒定而进行非电解镍磷镀敷处理的样品No.1-1中,在非电解镀层4的表面未形成凹部7。
(实施例2)
在实施例2中,除了将非电解镍磷镀敷处理时的条件变更为表4的条件以外,与实施例1同样地制作了半导体元件1。
[表4]
与实施例1同样地测定了形成于表侧电极3a以及背侧电极3b上的非电解镍磷镀层5以及非电解镀金层6的厚度。其结果,关于所有样品,非电解镀金层6的厚度是0.03μm。非电解镍磷镀层5的厚度的结果如表3所示。
另外,与实施例1同样地测定了非电解镍磷镀层5的镍浓度。其结果,关于所有样品,非电解镍磷镀层5的镍浓度是93质量%。
进而,与实施例1同样地测定了有无形成于由非电解镍磷镀层5以及非电解镀金层6构成的非电解镀层4的表面的凹部7、及其深度。表5示出这些结果。
[表5]
如表5所示,在一边使摇动速度和/或摇动幅度变化一边进行非电解镍磷镀敷处理的样品No.2-2~2-4中,在非电解镀层4的表面形成有凹部7,相对于此,在使摇动速度以及摇动幅度恒定而进行非电解镍磷镀敷处理的样品No.2-1中,在非电解镀层4的表面未形成凹部7。
(实施例3)
在实施例3中,除了在下述的表6以及表7所示的条件下进行各工序以外,与实施例1同样地制作了半导体元件1。
[表6]
[表7]
与实施例1同样地测定了形成于表侧电极3a以及背侧电极3b上的非电解镍磷镀层5以及非电解镀金层6的厚度。其结果,关于所有样品,非电解镀金层6的厚度是0.03μm。另外,关于非电解镍磷镀层5的厚度,在样品No.3-1、3-4以及3-5中是5.0μm,相对于此,在样品No.3-2中是4.7μm(通过蚀刻处理减少0.3μm),在样品No.3-3中是4.8μm(通过蚀刻处理减少0.2μm)。
另外,与实施例1同样地测定了非电解镍磷镀层5的镍浓度。其结果,关于所有样品,非电解镍磷镀层5的镍浓度是93质量%。
进而,与实施例1同样地测定了有无形成于由非电解镍磷镀层5以及非电解镀金层6构成的非电解镀层4的表面的凹部7、及其深度。表8示出这些结果。
[表8]
如表8所示,在对非电解镍磷镀层5的表面进行蚀刻处理的样品No.3-2~3-5中,在非电解镀层4的表面形成有凹部7,相对于此,在未对非电解镍磷镀层5的表面进行蚀刻处理的样品No.3-1中,在非电解镀层4的表面未形成凹部7。
(实施例4)
在实施例4中,除了在下述的表9以及表10所示的条件下进行各工序以外,与实施例1同样地制作了半导体元件1。
[表9]
[表10]
与实施例1同样地测定了形成于表侧电极3a以及背侧电极3b上的非电解镍磷镀层5以及非电解镀金层6的厚度。其结果,关于所有样品,非电解镍磷镀层5的厚度是5.0μm。非电解镀金层6的厚度的结果如表11所示。
另外,与实施例1同样地测定了非电解镍磷镀层5的镍浓度。其结果,关于所有样品,非电解镍磷镀层5的镍浓度是93质量%。
进而,与实施例1同样地测定了有无形成于由非电解镍磷镀层5以及非电解镀金层6构成的非电解镀层4的表面的凹部7、及其深度。表11示出这些结果。
[表11]
如表11所示,在一边使非电解镀金液的金浓度增加一边进行非电解镀金处理的样品No.4-2~4-5中,在非电解镀层4的表面形成有凹部7,相对于此,在使非电解镀金液的金浓度恒定而进行非电解镀金处理的样品No.4-1中,在非电解镀层4的表面未形成凹部7。
如从以上的结果可知,根据本发明,能够提供在通过焊接来安装时能够抑制在焊料内部发生空穴的半导体元件1及其制造方法。
(实施例5)
在实施例5中,除了在向背侧电极3b粘贴保护薄膜以避免背侧电极3b与镀敷液接触并进行各工序之后,使半导体元件干燥并剥离保护薄膜以外,与实施例1同样地制作了半导体元件1。
由此,能够在表侧电极3a中起到与实施例1同样的效果。
此外,本国际申请主张基于在2017年2月15日申请的日本专利申请第2017-025804号的优先权,在本国际申请中引用这些日本专利申请的全部内容。
Claims (14)
1.一种半导体元件,在具有表侧电极以及背侧电极的表背导通型基板的至少单侧的电极上形成有非电解镀层,所述半导体元件的特征在于,
所述至少单侧的电极的表面平坦,
所述非电解镀层具有形成于所述至少单侧的电极上的非电解镍磷镀层和形成于所述非电解镍磷镀层上的非电解镀金层,在所述非电解镀层的作为被焊料接合的面的表面形成有凹部。
2.根据权利要求1所述的半导体元件,其特征在于,
所述至少单侧的电极的表面的平坦度用Ra值表示是0.005μm以上且0.15μm以下。
3.根据权利要求1或者2所述的半导体元件,其特征在于,
形成于所述非电解镀层的表面的凹部的深度是0.05μm以上且1.5μm以下。
4.根据权利要求1或者2所述的半导体元件,其特征在于,
形成于所述非电解镀层的表面的凹部的直径是0.05μm以下。
5.根据权利要求1或者2所述的半导体元件,其特征在于,
所述非电解镍磷镀层具有镍浓度不同的2个层,所述非电解镀金层侧的所述非电解镍磷镀层的镍浓度高于所述至少单侧的电极侧的所述非电解镍磷镀层的镍浓度。
6.根据权利要求1或者2所述的半导体元件,其特征在于,
所述非电解镀层和从由外部端子以及散热基板构成的群选择的至少1个通过焊料接合。
7.一种半导体元件的制造方法,其特征在于,包括:
向表背导通型基板形成表侧电极的工序;以及
针对所述表侧电极依次形成非电解镍磷镀层及非电解镀金层的工序,
在所述表侧电极上形成非电解镍磷镀层时,一边使从由非电解镍磷镀敷液的镍浓度、pH、温度以及搅拌速度构成的群选择的至少1个增大,一边进行非电解镍磷镀敷处理。
8.一种半导体元件的制造方法,其特征在于,包括:
向表背导通型基板形成表侧电极的工序;以及
针对所述表侧电极依次形成非电解镍磷镀层及非电解镀金层的工序,
在所述表侧电极上形成非电解镍磷镀层时,一边使摇动速度以及摇动幅度的至少1个变化,一边进行非电解镍磷镀敷处理。
9.一种半导体元件的制造方法,其特征在于,包括:
向表背导通型基板形成表侧电极的工序;以及
针对所述表侧电极依次形成非电解镍磷镀层及非电解镀金层的工序,
在所述表侧电极上形成非电解镍磷镀层之后,对所述非电解镍磷镀层的表面进行蚀刻处理。
10.根据权利要求9所述的半导体元件的制造方法,其特征在于,
所述蚀刻处理是使用包含羧酸的蚀刻液来进行的。
11.一种半导体元件的制造方法,其特征在于,包括:
向表背导通型基板形成表侧电极的工序;以及
针对所述表侧电极依次形成非电解镍磷镀层及非电解镀金层的工序,
在形成所述非电解镀金层时,一边使非电解镀金液的金浓度增加,一边进行非电解镀金处理。
12.根据权利要求11所述的半导体元件的制造方法,其特征在于,
使用金浓度不同的2种非电解镀金液,在使用金浓度为零或者低的一方的所述非电解镀金液来进行非电解镀金处理之后,使用金浓度高的另一方的所述非电解镀金液来进行非电解镀金处理。
13.根据权利要求7~12中的任意一项所述的半导体元件的制造方法,其特征在于,
通过锌酸盐法形成所述非电解镍磷镀层。
14.根据权利要求7~12中的任意一项所述的半导体元件的制造方法,
还包括:在用铝或者铝合金形成所述表侧电极之后,通过将所述铝或者所述铝合金加热而熔融,使所述表侧电极的表面平坦化的工序。
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