CN110246760B - 蚀刻方法 - Google Patents

蚀刻方法 Download PDF

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Publication number
CN110246760B
CN110246760B CN201910508471.6A CN201910508471A CN110246760B CN 110246760 B CN110246760 B CN 110246760B CN 201910508471 A CN201910508471 A CN 201910508471A CN 110246760 B CN110246760 B CN 110246760B
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etching
film
lower electrode
layer film
gas
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Chinese (zh)
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CN110246760A (zh
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富永翔
高山航
五十岚義树
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Plasma Technology (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
CN201910508471.6A 2015-04-22 2016-04-21 蚀刻方法 Active CN110246760B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015-087900 2015-04-22
JP2015087900A JP6498022B2 (ja) 2015-04-22 2015-04-22 エッチング処理方法
CN201610252496.0A CN106067418B (zh) 2015-04-22 2016-04-21 蚀刻处理方法

Related Parent Applications (1)

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CN110246760A CN110246760A (zh) 2019-09-17
CN110246760B true CN110246760B (zh) 2023-02-17

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CN201610252496.0A Active CN106067418B (zh) 2015-04-22 2016-04-21 蚀刻处理方法

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US (1) US9666446B2 (enExample)
EP (2) EP3086359B1 (enExample)
JP (1) JP6498022B2 (enExample)
KR (1) KR102035890B1 (enExample)
CN (2) CN110246760B (enExample)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9997374B2 (en) 2015-12-18 2018-06-12 Tokyo Electron Limited Etching method
JP6498152B2 (ja) * 2015-12-18 2019-04-10 東京エレクトロン株式会社 エッチング方法
JP6385915B2 (ja) * 2015-12-22 2018-09-05 東京エレクトロン株式会社 エッチング方法
JP6568822B2 (ja) * 2016-05-16 2019-08-28 東京エレクトロン株式会社 エッチング方法
KR102356741B1 (ko) 2017-05-31 2022-01-28 삼성전자주식회사 절연층들을 갖는 반도체 소자 및 그 제조 방법
WO2019028136A1 (en) * 2017-08-04 2019-02-07 Lam Research Corporation SELECTIVE DEPOSITION OF SILICON NITRIDE ON HORIZONTAL SURFACES
JP6945388B2 (ja) * 2017-08-23 2021-10-06 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
JP6883495B2 (ja) * 2017-09-04 2021-06-09 東京エレクトロン株式会社 エッチング方法
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10847374B2 (en) * 2017-10-31 2020-11-24 Lam Research Corporation Method for etching features in a stack
US10811267B2 (en) 2017-12-21 2020-10-20 Micron Technology, Inc. Methods of processing semiconductor device structures and related systems
JP7158252B2 (ja) * 2018-02-15 2022-10-21 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP7018801B2 (ja) * 2018-03-29 2022-02-14 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP7325224B2 (ja) 2018-06-04 2023-08-14 東京エレクトロン株式会社 エッチング処理方法およびエッチング処理装置
WO2019235398A1 (ja) 2018-06-04 2019-12-12 東京エレクトロン株式会社 エッチング処理方法およびエッチング処理装置
JP7204348B2 (ja) * 2018-06-08 2023-01-16 東京エレクトロン株式会社 エッチング方法およびエッチング装置
KR102554014B1 (ko) * 2018-06-15 2023-07-11 삼성전자주식회사 저온 식각 방법 및 플라즈마 식각 장치
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
US10720337B2 (en) * 2018-07-20 2020-07-21 Asm Ip Holding B.V. Pre-cleaning for etching of dielectric materials
US10720334B2 (en) 2018-07-20 2020-07-21 Asm Ip Holding B.V. Selective cyclic dry etching process of dielectric materials using plasma modification
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
KR20250100790A (ko) 2019-01-22 2025-07-03 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
JP7229033B2 (ja) * 2019-02-01 2023-02-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR20200100555A (ko) * 2019-02-18 2020-08-26 도쿄엘렉트론가부시키가이샤 에칭 방법
JP7190940B2 (ja) 2019-03-01 2022-12-16 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7277225B2 (ja) * 2019-04-08 2023-05-18 東京エレクトロン株式会社 エッチング方法、及び、プラズマ処理装置
EP3909069A4 (en) 2019-06-28 2022-06-01 Yangtze Memory Technologies Co., Ltd. METHODS OF FABRICATING SEMICONDUCTOR DEVICES
JP7372073B2 (ja) 2019-08-02 2023-10-31 東京エレクトロン株式会社 基板処理方法、基板処理装置及びクリーニング装置
JP7390134B2 (ja) * 2019-08-28 2023-12-01 東京エレクトロン株式会社 エッチング処理方法およびエッチング処理装置
EP4022670A4 (en) 2019-08-30 2023-08-30 Lam Research Corporation High density, modulus, and hardness amorphous carbon films at low pressure
WO2021090516A1 (ja) 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
SG10202010798QA (en) * 2019-11-08 2021-06-29 Tokyo Electron Ltd Etching method and plasma processing apparatus
CN112786441A (zh) * 2019-11-08 2021-05-11 东京毅力科创株式会社 蚀刻方法及等离子体处理装置
JP2021174872A (ja) 2020-04-24 2021-11-01 東京エレクトロン株式会社 配管システム及び処理装置
US11087989B1 (en) 2020-06-18 2021-08-10 Applied Materials, Inc. Cryogenic atomic layer etch with noble gases
JP7595431B2 (ja) 2020-07-21 2024-12-06 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11462388B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
TWI895472B (zh) * 2020-08-17 2025-09-01 日商東京威力科創股份有限公司 蝕刻方法及蝕刻裝置
JP7534046B2 (ja) 2020-08-19 2024-08-14 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
JP7565763B2 (ja) * 2020-11-17 2024-10-11 東京エレクトロン株式会社 基板処理方法および基板処理システム
JP7638700B2 (ja) 2020-12-24 2025-03-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
JP2023082809A (ja) * 2021-12-03 2023-06-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
JP2025517703A (ja) * 2022-05-19 2025-06-10 ラム リサーチ コーポレーション 極低温および昇温における高アスペクト比の誘電体エッチング用ハードマスク
CN119343759A (zh) * 2022-06-02 2025-01-21 朗姆研究公司 掺杂硅氧化物的降温蚀刻
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
JP7756056B2 (ja) * 2022-08-25 2025-10-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
US20250022714A1 (en) * 2023-07-13 2025-01-16 Applied Materials, Inc. Cyclic etch of silicon oxide and silicon nitride

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115231A (ja) * 1983-11-28 1985-06-21 Hitachi Ltd 平行平板形ドライエッチング装置
JPH05160077A (ja) * 1991-12-05 1993-06-25 Sharp Corp プラズマエッチング方法
CN101093796A (zh) * 2002-06-27 2007-12-26 东京毅力科创株式会社 等离子体处理方法
CN101110361A (zh) * 2006-07-19 2008-01-23 东京毅力科创株式会社 等离子体蚀刻方法及计算机可读取的存储介质
CN102683196A (zh) * 2011-03-14 2012-09-19 东京毅力科创株式会社 蚀刻方法、蚀刻装置及计算机可读存储介质
CN104347521A (zh) * 2013-07-31 2015-02-11 东京毅力科创株式会社 半导体器件的制造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772346A (en) 1980-10-24 1982-05-06 Toshiba Corp Manufacture of semiconductor device
JPH07104927B2 (ja) 1985-08-30 1995-11-13 キヤノン株式会社 画像処理装置
US5279705A (en) * 1990-11-28 1994-01-18 Dainippon Screen Mfg. Co., Ltd. Gaseous process for selectively removing silicon nitride film
JP3179872B2 (ja) * 1991-12-19 2001-06-25 東京エレクトロン株式会社 エッチング方法
JPH0722393A (ja) 1993-06-23 1995-01-24 Toshiba Corp ドライエッチング装置及びドライエッチング方法
JPH0722149A (ja) 1993-06-28 1995-01-24 Yazaki Corp 電線の接続装置及び接続方法
JP2956524B2 (ja) 1995-04-24 1999-10-04 日本電気株式会社 エッチング方法
JP3524763B2 (ja) * 1998-05-12 2004-05-10 株式会社日立製作所 エッチング方法
CN101667536B (zh) * 2001-08-31 2012-07-04 东京毅力科创株式会社 被处理体的蚀刻方法
JP2010205967A (ja) * 2009-03-04 2010-09-16 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
US8598040B2 (en) * 2011-09-06 2013-12-03 Lam Research Corporation ETCH process for 3D flash structures
KR102034556B1 (ko) * 2012-02-09 2019-10-21 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
JP5968130B2 (ja) * 2012-07-10 2016-08-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5878091B2 (ja) * 2012-07-20 2016-03-08 東京エレクトロン株式会社 エッチング方法
JP6154820B2 (ja) * 2012-11-01 2017-06-28 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6140575B2 (ja) * 2013-08-26 2017-05-31 東京エレクトロン株式会社 半導体装置の製造方法
JP6423643B2 (ja) * 2014-08-08 2018-11-14 東京エレクトロン株式会社 多層膜をエッチングする方法
US9728422B2 (en) * 2015-01-23 2017-08-08 Central Glass Company, Limited Dry etching method
JP6339963B2 (ja) * 2015-04-06 2018-06-06 東京エレクトロン株式会社 エッチング方法
US9613824B2 (en) * 2015-05-14 2017-04-04 Tokyo Electron Limited Etching method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115231A (ja) * 1983-11-28 1985-06-21 Hitachi Ltd 平行平板形ドライエッチング装置
JPH05160077A (ja) * 1991-12-05 1993-06-25 Sharp Corp プラズマエッチング方法
CN101093796A (zh) * 2002-06-27 2007-12-26 东京毅力科创株式会社 等离子体处理方法
CN101110361A (zh) * 2006-07-19 2008-01-23 东京毅力科创株式会社 等离子体蚀刻方法及计算机可读取的存储介质
CN102683196A (zh) * 2011-03-14 2012-09-19 东京毅力科创株式会社 蚀刻方法、蚀刻装置及计算机可读存储介质
CN104347521A (zh) * 2013-07-31 2015-02-11 东京毅力科创株式会社 半导体器件的制造方法

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Publication number Publication date
EP3086359A1 (en) 2016-10-26
US20160314986A1 (en) 2016-10-27
CN106067418A (zh) 2016-11-02
KR102035890B1 (ko) 2019-10-23
CN106067418B (zh) 2019-07-05
CN110246760A (zh) 2019-09-17
JP6498022B2 (ja) 2019-04-10
JP2016207840A (ja) 2016-12-08
EP3086359B1 (en) 2019-09-11
EP3621102A1 (en) 2020-03-11
KR20160125896A (ko) 2016-11-01
US9666446B2 (en) 2017-05-30

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