CN108461395B - 制造半导体器件的方法 - Google Patents

制造半导体器件的方法 Download PDF

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Publication number
CN108461395B
CN108461395B CN201810194182.9A CN201810194182A CN108461395B CN 108461395 B CN108461395 B CN 108461395B CN 201810194182 A CN201810194182 A CN 201810194182A CN 108461395 B CN108461395 B CN 108461395B
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China
Prior art keywords
film
dummy gate
gate electrode
insulating film
gate
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Chinese (zh)
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CN108461395A (zh
Inventor
佃荣次
片山弘造
园田贤一郎
国清辰也
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201810194182.9A 2013-01-25 2014-01-24 制造半导体器件的方法 Active CN108461395B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013-011820 2013-01-25
JP2013011820A JP6029989B2 (ja) 2013-01-25 2013-01-25 半導体装置の製造方法
CN201410035893.3A CN103972177B (zh) 2013-01-25 2014-01-24 半导体器件的制造方法

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CN201410035893.3A Division CN103972177B (zh) 2013-01-25 2014-01-24 半导体器件的制造方法

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CN108461395A CN108461395A (zh) 2018-08-28
CN108461395B true CN108461395B (zh) 2022-08-23

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US (3) US8956941B2 (enExample)
EP (1) EP2760048B1 (enExample)
JP (1) JP6029989B2 (enExample)
KR (1) KR20140095986A (enExample)
CN (2) CN108461395B (enExample)
TW (2) TWI591693B (enExample)

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US9390927B2 (en) * 2013-08-16 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Contact formation for split gate flash memory
US8883624B1 (en) * 2013-09-27 2014-11-11 Cypress Semiconductor Corporation Integration of a memory transistor into high-K, metal gate CMOS process flow
US9379222B2 (en) * 2014-05-30 2016-06-28 Freescale Semiconductor, Inc. Method of making a split gate non-volatile memory (NVM) cell
US9257445B2 (en) * 2014-05-30 2016-02-09 Freescale Semiconductor, Inc. Method of making a split gate non-volatile memory (NVM) cell and a logic transistor
JP2016039329A (ja) * 2014-08-08 2016-03-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6359386B2 (ja) * 2014-08-28 2018-07-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
KR101878114B1 (ko) * 2015-01-23 2018-07-12 실리콘 스토리지 테크놀로지 인크 금속 게이트들 및 로직 디바이스들을 갖는 자가 정렬된 분리형 게이트 메모리 셀 어레이를 형성하는 방법
JP6440507B2 (ja) * 2015-01-27 2018-12-19 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN106158637B (zh) * 2015-03-31 2019-04-26 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其形成方法
CN106158638B (zh) * 2015-04-01 2019-03-29 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其形成方法
JP5956033B1 (ja) * 2015-07-23 2016-07-20 株式会社フローディア メモリセル、半導体集積回路装置、および半導体集積回路装置の製造方法
JP6556567B2 (ja) * 2015-09-09 2019-08-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6069569B1 (ja) * 2016-08-24 2017-02-01 株式会社フローディア メモリセル、および不揮発性半導体記憶装置
EP4071787B1 (en) 2015-12-18 2023-09-27 Floadia Corporation Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device
JP5982055B1 (ja) * 2015-12-18 2016-08-31 株式会社フローディア メモリセル、不揮発性半導体記憶装置、および不揮発性半導体記憶装置の製造方法
JP6620046B2 (ja) * 2016-03-15 2019-12-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US9934826B2 (en) * 2016-04-14 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6750994B2 (ja) * 2016-09-29 2020-09-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10872898B2 (en) * 2017-07-19 2020-12-22 Cypress Semiconductor Corporation Embedded non-volatile memory device and fabrication method of the same
US10672893B2 (en) 2017-11-30 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of making semiconductor device comprising flash memory and resulting device
JP2019102560A (ja) * 2017-11-30 2019-06-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2020035802A (ja) * 2018-08-27 2020-03-05 キオクシア株式会社 半導体記憶装置
CN111129020A (zh) * 2019-12-27 2020-05-08 华虹半导体(无锡)有限公司 闪存器件的制作方法
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Publication number Publication date
US8956941B2 (en) 2015-02-17
US20140213030A1 (en) 2014-07-31
CN103972177B (zh) 2018-03-30
US20160093716A1 (en) 2016-03-31
EP2760048A2 (en) 2014-07-30
JP2014143339A (ja) 2014-08-07
EP2760048B1 (en) 2017-09-06
CN108461395A (zh) 2018-08-28
KR20140095986A (ko) 2014-08-04
CN103972177A (zh) 2014-08-06
TW201724221A (zh) 2017-07-01
US20150111357A1 (en) 2015-04-23
JP6029989B2 (ja) 2016-11-24
TW201430921A (zh) 2014-08-01
TWI591693B (zh) 2017-07-11
US9184264B2 (en) 2015-11-10
EP2760048A3 (en) 2016-08-10
TWI623028B (zh) 2018-05-01

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