CN108138360B - 碳化硅外延基板及用于制造碳化硅半导体装置的方法 - Google Patents

碳化硅外延基板及用于制造碳化硅半导体装置的方法 Download PDF

Info

Publication number
CN108138360B
CN108138360B CN201680057722.8A CN201680057722A CN108138360B CN 108138360 B CN108138360 B CN 108138360B CN 201680057722 A CN201680057722 A CN 201680057722A CN 108138360 B CN108138360 B CN 108138360B
Authority
CN
China
Prior art keywords
silicon carbide
main surface
dislocation
single crystal
epitaxial substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680057722.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN108138360A (zh
Inventor
西口太郎
平塚健二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN108138360A publication Critical patent/CN108138360A/zh
Application granted granted Critical
Publication of CN108138360B publication Critical patent/CN108138360B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
CN201680057722.8A 2015-10-07 2016-07-04 碳化硅外延基板及用于制造碳化硅半导体装置的方法 Active CN108138360B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015199565 2015-10-07
JP2015-199565 2015-10-07
PCT/JP2016/069801 WO2017061154A1 (ja) 2015-10-07 2016-07-04 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN108138360A CN108138360A (zh) 2018-06-08
CN108138360B true CN108138360B (zh) 2020-12-08

Family

ID=58487499

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680057722.8A Active CN108138360B (zh) 2015-10-07 2016-07-04 碳化硅外延基板及用于制造碳化硅半导体装置的方法

Country Status (5)

Country Link
US (1) US20170275779A1 (https=)
JP (2) JP6798293B2 (https=)
CN (1) CN108138360B (https=)
DE (1) DE112016004600B4 (https=)
WO (1) WO2017061154A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001189692A (ja) * 1999-12-28 2001-07-10 Matsushita Electric Ind Co Ltd 受信装置及び利得制御方法
CN108138360B (zh) * 2015-10-07 2020-12-08 住友电气工业株式会社 碳化硅外延基板及用于制造碳化硅半导体装置的方法
CN109844186B (zh) * 2017-09-08 2020-02-21 住友电气工业株式会社 碳化硅外延基板和制造碳化硅半导体器件的方法
DE102018106967B3 (de) * 2018-03-23 2019-05-23 Infineon Technologies Ag SILIZIUMCARBID HALBLEITERBAUELEMENT und Halbleiterdiode
CN112470255B (zh) * 2018-07-20 2024-03-19 住友电气工业株式会社 碳化硅外延衬底和碳化硅半导体器件的制造方法
CN113272480B (zh) * 2019-01-08 2024-05-14 住友电气工业株式会社 碳化硅再生基板和碳化硅半导体装置的制造方法
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
JP7319502B2 (ja) * 2020-01-09 2023-08-02 株式会社東芝 炭化珪素基体の製造方法、半導体装置の製造方法、炭化珪素基体、及び、半導体装置
EP3943645A1 (en) * 2020-07-21 2022-01-26 SiCrystal GmbH Sic crystalline substrates with an optimal orientation of lattice planes for fissure reduction and method of producing same
EP3943644A1 (en) 2020-07-21 2022-01-26 SiCrystal GmbH Sic crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US123502A (en) * 1872-02-06 Improvement in hoes
US40103A (en) * 1863-09-29 Improvement in quartz-crushers
US33503A (en) * 1861-10-15 Improvement in railroad-rails
US81910A (en) * 1868-09-08 keltum
US71301A (en) * 1867-11-26 Improvement in gang-ploughs
US93518A (en) * 1869-08-10 Improvement in stuffing-boxes
US51301A (en) * 1865-12-05 Improvement in mowing-machines
US53517A (en) * 1866-03-27 Improvement in sealing boxes
US5679153A (en) * 1994-11-30 1997-10-21 Cree Research, Inc. Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
US6508880B2 (en) * 2000-02-15 2003-01-21 The Fox Group, Inc. Apparatus for growing low defect density silicon carbide
US6863728B2 (en) * 2001-02-14 2005-03-08 The Fox Group, Inc. Apparatus for growing low defect density silicon carbide
DE10247017B4 (de) * 2001-10-12 2009-06-10 Denso Corp., Kariya-shi SiC-Einkristall, Verfahren zur Herstellung eines SiC-Einkristalls, SiC-Wafer mit einem Epitaxiefilm und Verfahren zur Herstellung eines SiC-Wafers, der einen Epitaxiefilm aufweist
ATE546569T1 (de) * 2002-03-19 2012-03-15 Central Res Inst Elect Verfahren zur herstellung von sic-kristall
US6869480B1 (en) * 2002-07-17 2005-03-22 The United States Of America As Represented By The United States National Aeronautics And Space Administration Method for the production of nanometer scale step height reference specimens
JP3764462B2 (ja) * 2003-04-10 2006-04-05 株式会社豊田中央研究所 炭化ケイ素単結晶の製造方法
US7230274B2 (en) * 2004-03-01 2007-06-12 Cree, Inc Reduction of carrot defects in silicon carbide epitaxy
WO2005093796A1 (ja) * 2004-03-26 2005-10-06 The Kansai Electric Power Co., Inc. バイポーラ型半導体装置およびその製造方法
DE102005017814B4 (de) * 2004-04-19 2016-08-11 Denso Corporation Siliziumkarbid-Halbleiterbauelement und Verfahren zu dessen Herstellung
EP1619276B1 (en) * 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
WO2007032214A1 (ja) * 2005-09-14 2007-03-22 The Kansai Electric Power Co., Inc. 炭化珪素半導体素子の製造方法
JP5070691B2 (ja) * 2005-10-03 2012-11-14 住友電気工業株式会社 炭化珪素基板および縦型半導体装置
WO2008015766A1 (fr) * 2006-08-04 2008-02-07 The Kansai Electric Power Co., Inc. Procédé pour récupérer une tension directe d'un dispositif à semi-conducteurs bipolaire, procédé de réduction de défaut de laminage et dispositif à semi-conducteurs bipolaire
US8293623B2 (en) * 2007-09-12 2012-10-23 Showa Denko K.K. Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate
US8652255B2 (en) * 2007-10-12 2014-02-18 The United States Of America, As Represented By The Secretary Of The Navy Method of producing epitaxial layers with low basal plane dislocation concentrations
JP5504597B2 (ja) * 2007-12-11 2014-05-28 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
JP2010184833A (ja) * 2009-02-12 2010-08-26 Denso Corp 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
JP4978637B2 (ja) * 2009-02-12 2012-07-18 株式会社デンソー 炭化珪素単結晶の製造方法
WO2010131571A1 (ja) * 2009-05-11 2010-11-18 住友電気工業株式会社 半導体装置
US10256094B2 (en) * 2009-08-20 2019-04-09 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
US9464366B2 (en) * 2009-08-20 2016-10-11 The United States Of America, As Represented By The Secretary Of The Navy Reduction of basal plane dislocations in epitaxial SiC
US10256090B2 (en) * 2009-08-20 2019-04-09 The United States Of America, As Represented By The Secretary Of The Navy Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
JP4959763B2 (ja) * 2009-08-28 2012-06-27 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
JP4887418B2 (ja) * 2009-12-14 2012-02-29 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
JP4850960B2 (ja) * 2010-04-07 2012-01-11 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板の製造方法
CN102859654B (zh) * 2010-05-10 2016-01-13 三菱电机株式会社 碳化硅外延晶片及其制造方法、外延生长用碳化硅块状衬底及其制造方法
JP4880052B2 (ja) * 2010-05-11 2012-02-22 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
JP5276068B2 (ja) * 2010-08-26 2013-08-28 株式会社豊田中央研究所 ＳｉＣ単結晶の製造方法
SE1051137A1 (sv) * 2010-10-29 2012-04-30 Fairchild Semiconductor Förfarande för tillverkning av en kiselkarbid bipolär transistor och kiselkarbid bipolär transistor därav
FR2969815B1 (fr) * 2010-12-27 2013-11-22 Soitec Silicon On Insulator Tech Procédé de fabrication d'un dispositif semi-conducteur
KR101494122B1 (ko) * 2011-04-21 2015-02-16 신닛테츠스미킨 카부시키카이샤 에피택셜 탄화 규소 단결정 기판 및 그 제조 방법
JP6025306B2 (ja) * 2011-05-16 2016-11-16 株式会社豊田中央研究所 ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス
JP5958949B2 (ja) * 2011-05-26 2016-08-02 一般財団法人電力中央研究所 炭化珪素基板、炭化珪素ウェハ、炭化珪素ウェハの製造方法及び炭化珪素半導体素子
EP2752508A4 (en) * 2011-08-29 2015-02-25 Nippon Steel & Sumitomo Metal Corp SILICON CARBIDE CRYSTAL WAFERS AND MANUFACTURING METHOD THEREFOR
JP5961357B2 (ja) * 2011-09-09 2016-08-02 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
US8900979B2 (en) * 2011-11-23 2014-12-02 University Of South Carolina Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
JP5750363B2 (ja) * 2011-12-02 2015-07-22 株式会社豊田中央研究所 ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス
US8860040B2 (en) * 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
JP2014146748A (ja) * 2013-01-30 2014-08-14 Toshiba Corp 半導体装置及びその製造方法並びに半導体基板
JP6090998B2 (ja) * 2013-01-31 2017-03-08 一般財団法人電力中央研究所 六方晶単結晶の製造方法、六方晶単結晶ウエハの製造方法
JP2014175412A (ja) * 2013-03-07 2014-09-22 Toshiba Corp 半導体基板及び半導体装置
US8940614B2 (en) * 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
CN103280502B (zh) * 2013-05-23 2016-12-28 安徽三安光电有限公司 发光器件及其制作方法
JP6183010B2 (ja) * 2013-07-03 2017-08-23 住友電気工業株式会社 炭化珪素単結晶基板およびその製造方法
JP6311384B2 (ja) * 2014-03-24 2018-04-18 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP2015199565A (ja) 2014-04-07 2015-11-12 株式会社小森コーポレーション シート検出装置
US9425262B2 (en) * 2014-05-29 2016-08-23 Fairchild Semiconductor Corporation Configuration of portions of a power device within a silicon carbide crystal
JP2016166112A (ja) * 2015-03-10 2016-09-15 株式会社東芝 半導体基板及び半導体装置
JP6584253B2 (ja) * 2015-09-16 2019-10-02 ローム株式会社 ＳｉＣエピタキシャルウェハ、ＳｉＣエピタキシャルウェハの製造装置、ＳｉＣエピタキシャルウェハの製造方法、および半導体装置
CN108138360B (zh) * 2015-10-07 2020-12-08 住友电气工业株式会社 碳化硅外延基板及用于制造碳化硅半导体装置的方法

Also Published As

Publication number Publication date
DE112016004600T5 (de) 2018-06-21
JP6798293B2 (ja) 2020-12-09
JP7052851B2 (ja) 2022-04-12
DE112016004600B4 (de) 2025-10-23
CN108138360A (zh) 2018-06-08
US20170275779A1 (en) 2017-09-28
JP2017071551A (ja) 2017-04-13
JP2021035905A (ja) 2021-03-04
WO2017061154A1 (ja) 2017-04-13

Similar Documents

Publication Publication Date Title
CN108138360B (zh) 碳化硅外延基板及用于制造碳化硅半导体装置的方法
US10697086B2 (en) Method for manufacturing silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and apparatus for manufacturing silicon carbide epitaxial substrate
CN108463871A (zh) 碳化硅外延衬底及制造碳化硅半导体器件的方法
JP6696499B2 (ja) 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6891758B2 (ja) 炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法
JP7415558B2 (ja) 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
WO2018142668A1 (ja) 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6233555B1 (ja) 炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法
JP6954316B2 (ja) 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
US11735415B2 (en) Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
US20210166941A1 (en) Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
JP6090552B1 (ja) 炭化珪素エピタキシャル基板の製造方法、炭化珪素半導体装置の製造方法および炭化珪素エピタキシャル基板の製造装置
JPWO2017051611A1 (ja) 炭化珪素エピタキシャル基板の製造方法、炭化珪素半導体装置の製造方法および炭化珪素エピタキシャル基板の製造装置
JP6061060B1 (ja) 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP2020009941A (ja) 炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法
JP2020009940A (ja) 炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant