CN108028196A - 等离子体处理方法 - Google Patents

等离子体处理方法 Download PDF

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Publication number
CN108028196A
CN108028196A CN201680043730.7A CN201680043730A CN108028196A CN 108028196 A CN108028196 A CN 108028196A CN 201680043730 A CN201680043730 A CN 201680043730A CN 108028196 A CN108028196 A CN 108028196A
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CN
China
Prior art keywords
gas
plasma
processing
semiconductor wafer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201680043730.7A
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English (en)
Chinese (zh)
Inventor
小川秀平
朴玩哉
木原嘉英
本田昌伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN108028196A publication Critical patent/CN108028196A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201680043730.7A 2015-08-27 2016-08-10 等离子体处理方法 Pending CN108028196A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015167416A JP6817692B2 (ja) 2015-08-27 2015-08-27 プラズマ処理方法
JP2015-167416 2015-08-27
PCT/JP2016/073648 WO2017033754A1 (ja) 2015-08-27 2016-08-10 プラズマ処理方法

Publications (1)

Publication Number Publication Date
CN108028196A true CN108028196A (zh) 2018-05-11

Family

ID=58100040

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680043730.7A Pending CN108028196A (zh) 2015-08-27 2016-08-10 等离子体处理方法

Country Status (6)

Country Link
US (1) US10460963B2 (enExample)
JP (1) JP6817692B2 (enExample)
KR (1) KR102608178B1 (enExample)
CN (1) CN108028196A (enExample)
TW (1) TWI692029B (enExample)
WO (1) WO2017033754A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111834202A (zh) * 2019-04-15 2020-10-27 东京毅力科创株式会社 基板处理方法和基板处理装置
CN112103166A (zh) * 2019-06-18 2020-12-18 东京毅力科创株式会社 基板处理装置

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US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
KR102632799B1 (ko) * 2017-12-18 2024-02-01 도쿄엘렉트론가부시키가이샤 리소그래피를 위한 표면 접착력을 강화하기 위한 플라즈마 처리 방법
JP2019179889A (ja) * 2018-03-30 2019-10-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7653908B2 (ja) 2018-11-14 2025-03-31 ラム リサーチ コーポレーション 次世代リソグラフィにおいて有用なハードマスクを作製する方法
JP7229750B2 (ja) * 2018-12-14 2023-02-28 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
CN120762258A (zh) 2018-12-20 2025-10-10 朗姆研究公司 抗蚀剂的干式显影
TWI849083B (zh) 2019-03-18 2024-07-21 美商蘭姆研究公司 基板處理方法與設備
KR20210149893A (ko) 2019-04-30 2021-12-09 램 리써치 코포레이션 극자외선 리소그래피 레지스트 개선을 위한 원자 층 에칭 및 선택적인 증착 프로세스
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR102824282B1 (ko) * 2020-01-09 2025-06-24 삼성전자주식회사 미세 패턴의 절단 방법, 이를 이용한 액티브 패턴들의 형성 방법, 및 이를 이용한 반도체 장치의 제조 방법
EP4651192A3 (en) 2020-01-15 2026-03-04 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
US12261044B2 (en) 2020-02-28 2025-03-25 Lam Research Corporation Multi-layer hardmask for defect reduction in EUV patterning
JP2023530299A (ja) * 2020-06-22 2023-07-14 ラム リサーチ コーポレーション 金属含有フォトレジスト堆積のための表面改質
KR102601038B1 (ko) 2020-07-07 2023-11-09 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
KR102673863B1 (ko) 2020-11-13 2024-06-11 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴
WO2022125388A1 (en) 2020-12-08 2022-06-16 Lam Research Corporation Photoresist development with organic vapor
JP7773277B2 (ja) * 2021-04-14 2025-11-19 東京エレクトロン株式会社 基板処理方法
JP7721455B2 (ja) * 2022-01-31 2025-08-12 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
TW202417971A (zh) 2022-07-01 2024-05-01 美商蘭姆研究公司 用於蝕刻停止阻遏之基於金屬氧化物的光阻之循環顯影
CN120958566A (zh) 2023-03-17 2025-11-14 朗姆研究公司 用于单一处理室中euv图案化的干法显影与蚀刻工艺的集成
US20260052916A1 (en) * 2024-08-15 2026-02-19 Applied Materials, Inc. In-situ cycle ale method for dielectric deposition full-fill on narrow trench

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US20050048787A1 (en) * 2003-08-28 2005-03-03 Nobuyuki Negishi Dry etching method and apparatus
US20080220616A1 (en) * 2007-03-07 2008-09-11 Elpida Memory, Inc. Process for manufacturing a semiconductor device
JP2008218959A (ja) * 2007-02-09 2008-09-18 Tokyo Electron Ltd エッチング方法および記憶媒体
CN101826435A (zh) * 2009-03-04 2010-09-08 东京毅力科创株式会社 等离子蚀刻方法、等离子蚀刻装置及计算机存储介质
US20150132971A1 (en) * 2013-11-13 2015-05-14 Taiwan Semiconductor Manufacturing Company Limited Plasma generation and pulsed plasma etching
US20150228497A1 (en) * 2014-02-07 2015-08-13 Katholieke Universiteit Leuven, KU LEUVEN R&D Plasma Method for Reducing Post-Lithography Line Width Roughness

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JP5578782B2 (ja) 2008-03-31 2014-08-27 東京エレクトロン株式会社 プラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
JP5606060B2 (ja) * 2009-12-24 2014-10-15 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
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EP2608247A1 (en) * 2011-12-21 2013-06-26 Imec EUV photoresist encapsulation
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JP6226668B2 (ja) * 2012-09-25 2017-11-08 東京エレクトロン株式会社 プラズマ処理方法
JP6185305B2 (ja) * 2013-06-28 2017-08-23 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
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Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
US20050048787A1 (en) * 2003-08-28 2005-03-03 Nobuyuki Negishi Dry etching method and apparatus
JP2008218959A (ja) * 2007-02-09 2008-09-18 Tokyo Electron Ltd エッチング方法および記憶媒体
US20080220616A1 (en) * 2007-03-07 2008-09-11 Elpida Memory, Inc. Process for manufacturing a semiconductor device
CN101826435A (zh) * 2009-03-04 2010-09-08 东京毅力科创株式会社 等离子蚀刻方法、等离子蚀刻装置及计算机存储介质
US20150132971A1 (en) * 2013-11-13 2015-05-14 Taiwan Semiconductor Manufacturing Company Limited Plasma generation and pulsed plasma etching
US20150228497A1 (en) * 2014-02-07 2015-08-13 Katholieke Universiteit Leuven, KU LEUVEN R&D Plasma Method for Reducing Post-Lithography Line Width Roughness

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111834202A (zh) * 2019-04-15 2020-10-27 东京毅力科创株式会社 基板处理方法和基板处理装置
CN112103166A (zh) * 2019-06-18 2020-12-18 东京毅力科创株式会社 基板处理装置

Also Published As

Publication number Publication date
KR102608178B1 (ko) 2023-11-30
US10460963B2 (en) 2019-10-29
TW201719748A (zh) 2017-06-01
TWI692029B (zh) 2020-04-21
WO2017033754A1 (ja) 2017-03-02
KR20180043784A (ko) 2018-04-30
JP6817692B2 (ja) 2021-01-20
US20180226279A1 (en) 2018-08-09
JP2017045869A (ja) 2017-03-02

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Application publication date: 20180511