KR102608178B1 - 플라즈마 처리 방법 - Google Patents

플라즈마 처리 방법 Download PDF

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KR102608178B1
KR102608178B1 KR1020187002353A KR20187002353A KR102608178B1 KR 102608178 B1 KR102608178 B1 KR 102608178B1 KR 1020187002353 A KR1020187002353 A KR 1020187002353A KR 20187002353 A KR20187002353 A KR 20187002353A KR 102608178 B1 KR102608178 B1 KR 102608178B1
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gas
processing
plasma
etching
film
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KR20180043784A (ko
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슈헤이 오가와
박완재
요시히데 키하라
마사노부 혼다
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H01L21/3065—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01L21/31116—
    • H01L21/32136—
    • H01L21/324—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020187002353A 2015-08-27 2016-08-10 플라즈마 처리 방법 Active KR102608178B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015167416A JP6817692B2 (ja) 2015-08-27 2015-08-27 プラズマ処理方法
JPJP-P-2015-167416 2015-08-27
PCT/JP2016/073648 WO2017033754A1 (ja) 2015-08-27 2016-08-10 プラズマ処理方法

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KR20180043784A KR20180043784A (ko) 2018-04-30
KR102608178B1 true KR102608178B1 (ko) 2023-11-30

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US (1) US10460963B2 (enExample)
JP (1) JP6817692B2 (enExample)
KR (1) KR102608178B1 (enExample)
CN (1) CN108028196A (enExample)
TW (1) TWI692029B (enExample)
WO (1) WO2017033754A1 (enExample)

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US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
KR102632799B1 (ko) * 2017-12-18 2024-02-01 도쿄엘렉트론가부시키가이샤 리소그래피를 위한 표면 접착력을 강화하기 위한 플라즈마 처리 방법
JP2019179889A (ja) * 2018-03-30 2019-10-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7653908B2 (ja) 2018-11-14 2025-03-31 ラム リサーチ コーポレーション 次世代リソグラフィにおいて有用なハードマスクを作製する方法
JP7229750B2 (ja) * 2018-12-14 2023-02-28 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
CN120762258A (zh) 2018-12-20 2025-10-10 朗姆研究公司 抗蚀剂的干式显影
TWI849083B (zh) 2019-03-18 2024-07-21 美商蘭姆研究公司 基板處理方法與設備
JP2020177958A (ja) * 2019-04-15 2020-10-29 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR20210149893A (ko) 2019-04-30 2021-12-09 램 리써치 코포레이션 극자외선 리소그래피 레지스트 개선을 위한 원자 층 에칭 및 선택적인 증착 프로세스
CN112103166A (zh) * 2019-06-18 2020-12-18 东京毅力科创株式会社 基板处理装置
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR102824282B1 (ko) * 2020-01-09 2025-06-24 삼성전자주식회사 미세 패턴의 절단 방법, 이를 이용한 액티브 패턴들의 형성 방법, 및 이를 이용한 반도체 장치의 제조 방법
EP4651192A3 (en) 2020-01-15 2026-03-04 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
US12261044B2 (en) 2020-02-28 2025-03-25 Lam Research Corporation Multi-layer hardmask for defect reduction in EUV patterning
JP2023530299A (ja) * 2020-06-22 2023-07-14 ラム リサーチ コーポレーション 金属含有フォトレジスト堆積のための表面改質
KR102601038B1 (ko) 2020-07-07 2023-11-09 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
KR102673863B1 (ko) 2020-11-13 2024-06-11 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴
WO2022125388A1 (en) 2020-12-08 2022-06-16 Lam Research Corporation Photoresist development with organic vapor
JP7773277B2 (ja) * 2021-04-14 2025-11-19 東京エレクトロン株式会社 基板処理方法
JP7721455B2 (ja) * 2022-01-31 2025-08-12 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
TW202417971A (zh) 2022-07-01 2024-05-01 美商蘭姆研究公司 用於蝕刻停止阻遏之基於金屬氧化物的光阻之循環顯影
CN120958566A (zh) 2023-03-17 2025-11-14 朗姆研究公司 用于单一处理室中euv图案化的干法显影与蚀刻工艺的集成
US20260052916A1 (en) * 2024-08-15 2026-02-19 Applied Materials, Inc. In-situ cycle ale method for dielectric deposition full-fill on narrow trench

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CN108028196A (zh) 2018-05-11
US10460963B2 (en) 2019-10-29
TW201719748A (zh) 2017-06-01
TWI692029B (zh) 2020-04-21
WO2017033754A1 (ja) 2017-03-02
KR20180043784A (ko) 2018-04-30
JP6817692B2 (ja) 2021-01-20
US20180226279A1 (en) 2018-08-09
JP2017045869A (ja) 2017-03-02

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