JP6817692B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP6817692B2
JP6817692B2 JP2015167416A JP2015167416A JP6817692B2 JP 6817692 B2 JP6817692 B2 JP 6817692B2 JP 2015167416 A JP2015167416 A JP 2015167416A JP 2015167416 A JP2015167416 A JP 2015167416A JP 6817692 B2 JP6817692 B2 JP 6817692B2
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Japan
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gas
processing
plasma
semiconductor wafer
etching
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Japanese (ja)
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JP2017045869A5 (enExample
JP2017045869A (ja
Inventor
小川　秀平
秀平 小川
朴　玩哉
玩哉 朴
嘉英 木原
嘉英 木原
昌伸 本田
昌伸 本田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2015167416A priority Critical patent/JP6817692B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020187002353A priority patent/KR102608178B1/ko
Priority to CN201680043730.7A priority patent/CN108028196A/zh
Priority to PCT/JP2016/073648 priority patent/WO2017033754A1/ja
Priority to US15/747,900 priority patent/US10460963B2/en
Priority to TW105126157A priority patent/TWI692029B/zh
Publication of JP2017045869A publication Critical patent/JP2017045869A/ja
Publication of JP2017045869A5 publication Critical patent/JP2017045869A5/ja
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    • H10P50/242—
    • H10P72/0421—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H10P50/267—
    • H10P50/283—
    • H10P50/287—
    • H10P50/691—
    • H10P50/695—
    • H10P50/73—
    • H10P76/204—
    • H10P95/90—
    • H10W20/081—

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma Technology (AREA)
JP2015167416A 2015-08-27 2015-08-27 プラズマ処理方法 Active JP6817692B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2015167416A JP6817692B2 (ja) 2015-08-27 2015-08-27 プラズマ処理方法
CN201680043730.7A CN108028196A (zh) 2015-08-27 2016-08-10 等离子体处理方法
PCT/JP2016/073648 WO2017033754A1 (ja) 2015-08-27 2016-08-10 プラズマ処理方法
US15/747,900 US10460963B2 (en) 2015-08-27 2016-08-10 Plasma processing method
KR1020187002353A KR102608178B1 (ko) 2015-08-27 2016-08-10 플라즈마 처리 방법
TW105126157A TWI692029B (zh) 2015-08-27 2016-08-17 電漿處理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015167416A JP6817692B2 (ja) 2015-08-27 2015-08-27 プラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2017045869A JP2017045869A (ja) 2017-03-02
JP2017045869A5 JP2017045869A5 (enExample) 2018-06-14
JP6817692B2 true JP6817692B2 (ja) 2021-01-20

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Family Applications (1)

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JP2015167416A Active JP6817692B2 (ja) 2015-08-27 2015-08-27 プラズマ処理方法

Country Status (6)

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US (1) US10460963B2 (enExample)
JP (1) JP6817692B2 (enExample)
KR (1) KR102608178B1 (enExample)
CN (1) CN108028196A (enExample)
TW (1) TWI692029B (enExample)
WO (1) WO2017033754A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
WO2019125952A1 (en) * 2017-12-18 2019-06-27 Tokyo Electron Limited Plasma treatment method to enhance surface adhesion for lithography
JP2019179889A (ja) * 2018-03-30 2019-10-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
WO2020102085A1 (en) 2018-11-14 2020-05-22 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
JP7229750B2 (ja) * 2018-12-14 2023-02-28 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TWI849083B (zh) 2019-03-18 2024-07-21 美商蘭姆研究公司 基板處理方法與設備
JP2020177958A (ja) * 2019-04-15 2020-10-29 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2020223011A1 (en) 2019-04-30 2020-11-05 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
CN112103166A (zh) * 2019-06-18 2020-12-18 东京毅力科创株式会社 基板处理装置
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR102824282B1 (ko) 2020-01-09 2025-06-24 삼성전자주식회사 미세 패턴의 절단 방법, 이를 이용한 액티브 패턴들의 형성 방법, 및 이를 이용한 반도체 장치의 제조 방법
JP7189375B2 (ja) 2020-01-15 2022-12-13 ラム リサーチ コーポレーション フォトレジスト接着および線量低減のための下層
JP7702419B2 (ja) 2020-02-28 2025-07-03 ラム リサーチ コーポレーション Ｅｕｖパターニングにおける欠陥低減のための多層ハードマスク
WO2021262371A1 (en) * 2020-06-22 2021-12-30 Lam Research Corporation Surface modification for metal-containing photoresist deposition
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
US20230107357A1 (en) 2020-11-13 2023-04-06 Lam Research Corporation Process tool for dry removal of photoresist
JP7773277B2 (ja) * 2021-04-14 2025-11-19 東京エレクトロン株式会社 基板処理方法
JP7721455B2 (ja) * 2022-01-31 2025-08-12 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
CN118159914A (zh) 2022-07-01 2024-06-07 朗姆研究公司 用于阻止蚀刻停止的金属氧化物基光致抗蚀剂的循环显影
WO2024196643A1 (en) 2023-03-17 2024-09-26 Lam Research Corporation Integration of dry development and etch processes for euv patterning in a single process chamber

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06168918A (ja) * 1992-11-30 1994-06-14 Sony Corp ドライエッチング方法及びドライエッチング装置
JP2000221698A (ja) * 1999-01-29 2000-08-11 Sony Corp 電子装置の製造方法
JP4260764B2 (ja) * 1999-03-09 2009-04-30 東京エレクトロン株式会社 半導体装置の製造方法
JP4538209B2 (ja) * 2003-08-28 2010-09-08 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
JP2005243681A (ja) * 2004-02-24 2005-09-08 Tokyo Electron Ltd 膜改質方法、膜改質装置及びスリミング量の制御方法
JP4194521B2 (ja) * 2004-04-07 2008-12-10 東京エレクトロン株式会社 半導体装置の製造方法
WO2008096752A1 (ja) * 2007-02-09 2008-08-14 Tokyo Electron Limited エッチング方法および記憶媒体
JP4919871B2 (ja) * 2007-02-09 2012-04-18 東京エレクトロン株式会社 エッチング方法、半導体装置の製造方法および記憶媒体
JP2008218867A (ja) * 2007-03-07 2008-09-18 Elpida Memory Inc 半導体装置の製造方法
JP5578782B2 (ja) 2008-03-31 2014-08-27 東京エレクトロン株式会社 プラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
JP2010205967A (ja) * 2009-03-04 2010-09-16 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
JP5606060B2 (ja) * 2009-12-24 2014-10-15 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
JP2011138871A (ja) * 2009-12-28 2011-07-14 Renesas Electronics Corp 半導体装置の製造方法
EP2608247A1 (en) * 2011-12-21 2013-06-26 Imec EUV photoresist encapsulation
JP5894106B2 (ja) * 2012-06-18 2016-03-23 信越化学工業株式会社 レジスト下層膜形成用化合物、これを用いたレジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
JP6226668B2 (ja) * 2012-09-25 2017-11-08 東京エレクトロン株式会社 プラズマ処理方法
JP6185305B2 (ja) * 2013-06-28 2017-08-23 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
US9793127B2 (en) * 2013-11-13 2017-10-17 Taiwan Semiconductor Manufacturing Company Limited Plasma generation and pulsed plasma etching
JP2015138914A (ja) * 2014-01-23 2015-07-30 マイクロン テクノロジー， インク． 半導体装置の製造方法
KR20150093618A (ko) * 2014-02-07 2015-08-18 아이엠이씨 브이제트더블유 포스트-리소그래피 라인 폭 러프니스를 감소시키기 위한 플라즈마 방법

Also Published As

Publication number Publication date
TW201719748A (zh) 2017-06-01
CN108028196A (zh) 2018-05-11
TWI692029B (zh) 2020-04-21
WO2017033754A1 (ja) 2017-03-02
KR20180043784A (ko) 2018-04-30
KR102608178B1 (ko) 2023-11-30
US10460963B2 (en) 2019-10-29
JP2017045869A (ja) 2017-03-02
US20180226279A1 (en) 2018-08-09

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