CN105991943B - 固态成像设备、驱动固态成像设备的方法以及成像系统 - Google Patents

固态成像设备、驱动固态成像设备的方法以及成像系统 Download PDF

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CN105991943B
CN105991943B CN201610146455.3A CN201610146455A CN105991943B CN 105991943 B CN105991943 B CN 105991943B CN 201610146455 A CN201610146455 A CN 201610146455A CN 105991943 B CN105991943 B CN 105991943B
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voltage
transistor
reset
diffusion layer
reset transistor
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CN105991943A (zh
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乾文洋
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/627—Detection or reduction of inverted contrast or eclipsing effects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201610146455.3A 2015-03-19 2016-03-15 固态成像设备、驱动固态成像设备的方法以及成像系统 Active CN105991943B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015055877A JP2016178408A (ja) 2015-03-19 2015-03-19 固体撮像装置及びその駆動方法、並びに撮像システム
JP2015-055877 2015-03-19

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CN105991943B true CN105991943B (zh) 2019-10-01

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US (2) US9661247B2 (enExample)
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US9838623B2 (en) * 2015-11-12 2017-12-05 Omnivision Technologies, Inc. Global shutter control signal generator with reduced driving requirements
JP2019087939A (ja) 2017-11-09 2019-06-06 キヤノン株式会社 光電変換装置、電子機器、輸送機器および光電変換装置の駆動方法
US11025848B2 (en) 2018-08-31 2021-06-01 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, moving body, and stackable semiconductor device

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US7196726B2 (en) * 2001-05-02 2007-03-27 Fujitsu Limited CMOS sensor circuit having a voltage control circuit controlling a gate potential of a photodiode reset transistor to a potential other than power source potentials
JP2008199101A (ja) * 2007-02-08 2008-08-28 Toshiba Corp 固体撮像装置及びその駆動方法
CN101556962A (zh) * 2008-04-11 2009-10-14 三星电子株式会社 包括具有两个栅极的感应晶体管的图像传感器及操作方法
CN101909167A (zh) * 2009-06-05 2010-12-08 索尼公司 固体摄像器件、其驱动方法和包括该器件的电子系统
CN101930985A (zh) * 2009-06-26 2010-12-29 索尼公司 光电转换设备及其方法、放射线成像设备及其方法
CN102300053A (zh) * 2010-06-24 2011-12-28 佳能株式会社 固态成像装置和用于固态成像装置的驱动方法
CN103348475A (zh) * 2011-02-09 2013-10-09 意法半导体(R&D)有限公司 传感器的或涉及传感器的改进

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JP2001309243A (ja) * 2000-02-14 2001-11-02 Sharp Corp 固体撮像装置および撮像装置の駆動方法
US7196726B2 (en) * 2001-05-02 2007-03-27 Fujitsu Limited CMOS sensor circuit having a voltage control circuit controlling a gate potential of a photodiode reset transistor to a potential other than power source potentials
JP2008199101A (ja) * 2007-02-08 2008-08-28 Toshiba Corp 固体撮像装置及びその駆動方法
CN101556962A (zh) * 2008-04-11 2009-10-14 三星电子株式会社 包括具有两个栅极的感应晶体管的图像传感器及操作方法
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CN101930985A (zh) * 2009-06-26 2010-12-29 索尼公司 光电转换设备及其方法、放射线成像设备及其方法
CN102300053A (zh) * 2010-06-24 2011-12-28 佳能株式会社 固态成像装置和用于固态成像装置的驱动方法
CN103348475A (zh) * 2011-02-09 2013-10-09 意法半导体(R&D)有限公司 传感器的或涉及传感器的改进

Also Published As

Publication number Publication date
US20170223289A1 (en) 2017-08-03
US9860462B2 (en) 2018-01-02
CN105991943A (zh) 2016-10-05
US20160277690A1 (en) 2016-09-22
JP2016178408A (ja) 2016-10-06
US9661247B2 (en) 2017-05-23

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