CN105514165B - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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CN105514165B
CN105514165B CN201510658801.1A CN201510658801A CN105514165B CN 105514165 B CN105514165 B CN 105514165B CN 201510658801 A CN201510658801 A CN 201510658801A CN 105514165 B CN105514165 B CN 105514165B
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fin
finfet
substrate
semiconductor device
region
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CN105514165A (zh
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郑恩爱
崔正达
中西俊郎
金有彬
南甲镇
李同规
焦广泛
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7855—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with at least two independent gates
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/7856—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with an non-uniform gate, e.g. varying doping structure, shape or composition on different sides of the fin, or different gate insulator thickness or composition on opposing fin sides
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    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
CN201510658801.1A 2014-10-13 2015-10-12 半导体器件及其制造方法 Active CN105514165B (zh)

Applications Claiming Priority (2)

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KR1020140137857A KR102245133B1 (ko) 2014-10-13 2014-10-13 이종 게이트 구조의 finFET를 구비한 반도체 소자 및 그 제조방법
KR10-2014-0137857 2014-10-13

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