CN105244372B - 对被处理体进行处理的方法 - Google Patents

对被处理体进行处理的方法 Download PDF

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Publication number
CN105244372B
CN105244372B CN201510378428.4A CN201510378428A CN105244372B CN 105244372 B CN105244372 B CN 105244372B CN 201510378428 A CN201510378428 A CN 201510378428A CN 105244372 B CN105244372 B CN 105244372B
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China
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gas
region
processed
processing
plasma
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Chinese (zh)
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CN105244372A (zh
Inventor
渡边光
本田昌伸
辻晃弘
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H10W20/0765—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches the thin functional dielectric layers being temporary, e.g. sacrificial layers

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201510378428.4A 2014-07-01 2015-07-01 对被处理体进行处理的方法 Active CN105244372B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014135629 2014-07-01
JP2014-135629 2014-07-01
JP2014-219285 2014-10-28
JP2014219285A JP6235981B2 (ja) 2014-07-01 2014-10-28 被処理体を処理する方法

Publications (2)

Publication Number Publication Date
CN105244372A CN105244372A (zh) 2016-01-13
CN105244372B true CN105244372B (zh) 2018-05-15

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Family Applications (1)

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CN201510378428.4A Active CN105244372B (zh) 2014-07-01 2015-07-01 对被处理体进行处理的方法

Country Status (6)

Country Link
US (1) US9330973B2 (https=)
EP (1) EP2963677A1 (https=)
JP (1) JP6235981B2 (https=)
KR (1) KR101888728B1 (https=)
CN (1) CN105244372B (https=)
TW (1) TWI610363B (https=)

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JP6086862B2 (ja) * 2013-08-30 2017-03-01 東京エレクトロン株式会社 酸化シリコンから構成された領域を選択的に除去する方法及びプラズマ処理装置
CN105810579B (zh) * 2015-01-16 2019-12-06 东京毅力科创株式会社 蚀刻方法
JP2016157793A (ja) * 2015-02-24 2016-09-01 東京エレクトロン株式会社 エッチング方法
JP6438831B2 (ja) * 2015-04-20 2018-12-19 東京エレクトロン株式会社 有機膜をエッチングする方法
US9508556B1 (en) * 2016-01-29 2016-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating fin field effect transistor and semiconductor device
JP6604476B2 (ja) * 2016-03-11 2019-11-13 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
CN108780748B (zh) * 2016-03-17 2023-02-17 日本瑞翁株式会社 等离子体蚀刻方法
JP6670672B2 (ja) * 2016-05-10 2020-03-25 東京エレクトロン株式会社 エッチング方法
JP6656082B2 (ja) * 2016-05-19 2020-03-04 東京エレクトロン株式会社 酸化膜除去方法および除去装置、ならびにコンタクト形成方法およびコンタクト形成システム
JP6606464B2 (ja) * 2016-05-20 2019-11-13 東京エレクトロン株式会社 エッチング方法
JP2017212361A (ja) * 2016-05-26 2017-11-30 東京エレクトロン株式会社 プラズマ処理装置及びパーティクル付着抑制方法
KR101895931B1 (ko) * 2016-05-26 2018-09-10 세메스 주식회사 기판 처리 장치 및 방법
US10373828B2 (en) * 2016-05-29 2019-08-06 Tokyo Electron Limited Method of sidewall image transfer
JP6689674B2 (ja) * 2016-05-30 2020-04-28 東京エレクトロン株式会社 エッチング方法
JP6670707B2 (ja) * 2016-08-24 2020-03-25 東京エレクトロン株式会社 基板処理方法
WO2018057493A1 (en) * 2016-09-21 2018-03-29 Tokyo Electron Limited Method of patterning intersecting structures
JP6836953B2 (ja) * 2016-12-13 2021-03-03 東京エレクトロン株式会社 窒化シリコンから形成された第１領域を酸化シリコンから形成された第２領域に対して選択的にエッチングする方法
JP6767302B2 (ja) * 2017-04-14 2020-10-14 東京エレクトロン株式会社 成膜方法
JP6823527B2 (ja) * 2017-04-14 2021-02-03 東京エレクトロン株式会社 エッチング方法
JP6877316B2 (ja) * 2017-11-08 2021-05-26 東京エレクトロン株式会社 エッチング方法
KR102099886B1 (ko) * 2018-05-23 2020-04-14 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
KR20210003230A (ko) * 2018-06-08 2021-01-11 가부시키가이샤 아루박 산화막 제거 방법, 및 산화막 제거 장치
JP7398915B2 (ja) * 2019-10-01 2023-12-15 東京エレクトロン株式会社 基板処理方法、半導体デバイスの製造方法、及び、プラズマ処理装置
US11232947B1 (en) 2020-09-01 2022-01-25 Taiwan Semiconductor Manufacturing Company Limited Ammonium fluoride pre-clean protection
TWI906294B (zh) * 2021-05-07 2025-12-01 日商東京威力科創股份有限公司 蝕刻方法及蝕刻裝置

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EP0721205A2 (en) * 1994-12-07 1996-07-10 Cypress Semiconductor Corporation Method of etching an oxide layer with simultaneous deposition of a polymer layer
US6617253B1 (en) * 1999-07-20 2003-09-09 Samsung Electronics Co., Ltd. Plasma etching method using polymer deposition and method of forming contact hole using the plasma etching method
CN1187796C (zh) * 2000-11-24 2005-02-02 三星电子株式会社 利用具有至少一个等离子体预处理舱的装置组制造半导体器件的接触的方法
CN1285106C (zh) * 2001-10-24 2006-11-15 松下电器产业株式会社 蚀刻方法

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JP6396699B2 (ja) * 2014-02-24 2018-09-26 東京エレクトロン株式会社 エッチング方法
JP6230954B2 (ja) * 2014-05-09 2017-11-15 東京エレクトロン株式会社 エッチング方法

Patent Citations (4)

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EP0721205A2 (en) * 1994-12-07 1996-07-10 Cypress Semiconductor Corporation Method of etching an oxide layer with simultaneous deposition of a polymer layer
US6617253B1 (en) * 1999-07-20 2003-09-09 Samsung Electronics Co., Ltd. Plasma etching method using polymer deposition and method of forming contact hole using the plasma etching method
CN1187796C (zh) * 2000-11-24 2005-02-02 三星电子株式会社 利用具有至少一个等离子体预处理舱的装置组制造半导体器件的接触的方法
CN1285106C (zh) * 2001-10-24 2006-11-15 松下电器产业株式会社 蚀刻方法

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Also Published As

Publication number Publication date
EP2963677A1 (en) 2016-01-06
TWI610363B (zh) 2018-01-01
US20160005651A1 (en) 2016-01-07
JP2016027594A (ja) 2016-02-18
KR20160003565A (ko) 2016-01-11
US9330973B2 (en) 2016-05-03
CN105244372A (zh) 2016-01-13
JP6235981B2 (ja) 2017-11-22
TW201612977A (en) 2016-04-01
KR101888728B1 (ko) 2018-08-14

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