CN105190855A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN105190855A
CN105190855A CN201380074546.5A CN201380074546A CN105190855A CN 105190855 A CN105190855 A CN 105190855A CN 201380074546 A CN201380074546 A CN 201380074546A CN 105190855 A CN105190855 A CN 105190855A
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semiconductor element
fin
semiconductor device
semiconductor
bight
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CN105190855B (zh
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织本宪宗
今井诚
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Denso Corp
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Toyota Motor Corp
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Abstract

本说明书公开了一种半导体装置。该半导体装置具备：俯视观察时呈矩形形状的半导体元件和供半导体元件固定的被固定部件。半导体元件被配置为其矩形形状的面朝向被固定部件的表面。半导体元件的矩形形状的面的一部分固定于被固定部件的表面，半导体元件的矩形形状的面的至少角部未固定于被固定部件的表面。在上述半导体装置中，在半导体装置的温度变化的情况下容易产生热应力的半导体元件的角部和被固定部件未被相互固定。由此，能够降低半导体元件产生的热应力。另外，由于仅采用半导体元件的角部和被固定部件未被相互固定的结构，因此能够抑制半导体装置的体积增大。

Description

半导体装置
技术领域
本说明书公开的技术涉及一种半导体装置。
背景技术
利用焊料将半导体元件和散热片接合而成的半导体装置已被公开。半导体元件的热膨胀率和散热片的热膨胀率存在差异。因此，当半导体装置的温度变化时，半导体元件的尺寸变化量和散热片的尺寸变化量会产生差异。尺寸变化量的差异在半导体元件的对角线上较大。因此，在半导体元件的四角的角部容易产生热应力。在日本专利公开公报2009-170702号公开的半导体装置中，将半导体元件的角部和散热片(基板体)接合的焊料的厚度比半导体元件的角部以外的部分厚。由此，在半导体元件的温度变化时，使半导体元件产生的热应力降低。
发明内容
发明要解决的课题
在日本专利公开公报2009-170702号的技术中，增大半导体元件的角部的焊料厚度。因此，半导体装置的体积增大。
本说明书提供一种能够抑制半导体装置的体积增大并降低半导体元件产生的热应力的技术。
用于解决课题的技术方案
本说明书公开的半导体装置具备：俯视观察时呈矩形形状的半导体元件和供半导体元件固定的被固定部件。半导体元件被配置于其矩形形状的面朝向被固定部件的表面。半导体元件的矩形形状的面的一部分固定于被固定部件的表面，半导体元件的矩形形状的面的至少角部未固定于被固定部件的表面。
在上述半导体装置中，在半导体装置的温度变化的情况下容易产生热应力的半导体元件的角部和被固定部件未被相互固定。由此，能够降低半导体元件产生的热应力。另外，由于仅采用半导体元件的角部和被固定部件未被相互固定的结构，因此能够抑制半导体装置的体积增大。
附图说明
图1是表示实施例1的半导体装置2的俯视图。
图2是实施例1的半导体装置2的图1(II－II)截面处的剖视图。
图3是实施例1的半导体装置2的局部放大俯视图。
图4是实施例1的半导体装置2的图3(IV－IV)截面处的局部放大剖视图。
图5是表示实施例2的半导体装置102的俯视图。
图6是实施例2的半导体装置102的图5(VI－VI)截面处的剖视图。
图7是比较例的半导体装置的模拟了冷热循环试验的热应力分析的数值计算结果。
具体实施方式
以下，对本说明书中公开的实施例的几个技术特征进行说明。此外，以下说明的事项分别单独地具有技术实用性。
(特征1)本说明书中公开的半导体装置中，半导体元件的矩形形状的面也可以由接合材料固定于被固定部件的表面。在被固定部件的表面，也可以在矩形形状的面的角部所处的位置形成有凹陷。
在上述半导体装置中，在将半导体元件固定于被固定部件时，接合材料向形成有凹陷的部分流入。因此，防止半导体元件的角部和被固定部件相互固定。由此，能够降低半导体元件产生的热应力。
(特征2)本说明书中公开的半导体装置也可以还具备配置在半导体元件的矩形形状的面与被固定部件的表面之间的中间部件。半导体元件和被固定部件也可以经由中间部件相互固定。中间部件也可以不位于矩形形状的面的至少角部与被固定部件的表面之间。
在上述半导体装置中，中间部件不位于半导体元件的角部与被固定部件之间。因此，防止半导体元件的角部和被固定部件相互固定。由此，能够降低半导体元件产生的热应力。
实施例1
如图1～4所示，半导体装置2具备：半导体元件4和供半导体元件4固定的散热片6。半导体元件4为所谓半导体芯片。半导体元件4俯视观察时呈矩形形状(具体为正方形)。但是，半导体元件4也可以为长方形。另外，半导体元件4为IGBT。但是，半导体元件4例如也可以为MOSFET等其他半导体元件。
半导体元件4具备SiC基板。SiC基板在俯视图中央部具有有源区域4a，在有源区域4a的周围(具体来说，半导体元件4的外周缘部)具有周边区域4b(图3)。在有源区域4a形成有栅极、发射极区域、主体接触区域、主体区域、漂移区域、集电极区域各个区域。但是，由于半导体元件4具有的这些结构是以往公知的，因此省略其说明。在半导体元件4的上表面形成有发射电极(未图示)、栅极焊盘(未图示)和主体接触区域。在半导体元件4的下表面42形成有集电极。集电极形成于半导体元件4的整个下表面42。将半导体元件4的下表面42朝向后述的散热片6的表面6a配置。
散热片6由金属形成。作为形成散热片6的材料，例如能够使用Cu(铜)。散热片6俯视观察时呈矩形形状(图1)。散热片6的面积比半导体元件4的面积大。在散热片6的上表面6a形成有凹陷部10。凹陷部10形成于在半导体元件4配置在散热片6的上表面6a时半导体元件4的各个角部所处的位置(即，凹陷部10形成于四处)。
凹陷部10俯视观察时为等腰直角三角形(但是，如后所述，凹陷部10也可以为其他形状)。各个凹陷部10的形成直角的两边相接的顶点位于半导体元件4的外侧。半导体元件4的四个角部的顶点分别位于各凹陷部10的中央。半导体元件4的下表面42具有俯视观察时与凹陷部10重叠的部分即面44和不与凹陷部10重叠的部分即面46(图4)。面44与散热片6(详细来说，散热片6的凹陷部10)之间没有用焊料8固定。面46与散热片6(详细来说，散热片6的没有形成有凹陷部10的部分)之间用焊料8固定。
如图3、图4所示，凹陷部10的内表面具有面12和面14a、14b(在图4中，组合面14a和面14b而表示为面14)。面12位于半导体元件4的中心侧。面14a、14b位于与半导体元件4的中心侧相反的一侧。面12相对于散热片6的上表面6a倾斜。在以下的说明中，将面12与散热片6的上表面6a形成的角度称为角度θ。角度θ例如能够设为比45°小的角度。对角度θ，在后面进行说明。在散热片6的上表面6a形成有多余部分16。多余部分16相对于凹陷部10形成在与半导体元件4的中心相反的一侧。如上所述，半导体元件4的下表面42(具体来说，下表面42的一部分即面46)和散热片6由焊料8相互固定。由此，半导体元件4和散热片6电连接。其结果是，能够使用散热片6作为半导体装置2的电极(详细来说，集电极侧的电极)。另外，在使用半导体装置2时，能够将由半导体元件4产生的热经由散热片6向外部散热。由此，能够抑制半导体元件4的温度上升。
以下，对本实施例的半导体装置2的制造方法进行说明。散热片6通过在铜制片的上表面6a形成凹陷部10而进行制造。作为形成凹陷部10的方法，例如能够使用冲压加工。在进行冲压加工时，以散热片6的多余部分16相对于凹陷部10形成在与半导体元件4的中心相反的一侧的方式进行。
在散热片6形成凹陷部10之后，在散热片6的上表面6a配置片状焊料(以下，称为焊料片)。焊料片(未图示)例如为与俯视半导体元件4的形状相同的形状(即矩形形状)，且能够设为相同的大小。焊料片以焊料片的角部分别位于各凹陷部10上的方式配置。在将焊料片配置在散热片6的上表面6a之后，在焊料片上配置半导体元件4。如上所述，半导体元件4以半导体元件4的角部分别位于凹陷部10上的方式配置。即，通过配置半导体元件4，成为半导体元件4重叠在焊料片上的状态。
如上所述，通过冲压加工产生的散热片6的多余部分16相对于凹陷部10形成在与半导体元件4的中心相反的一侧。即，多余部分16俯视观察时形成在不与半导体元件4重叠的位置。因此，抑制在配置有半导体元件4时半导体元件4与多余部分16干涉。
接着，使半导体装置2的温度上升到焊料8的熔点以上的温度。通过使温度上升，焊料片熔融而成为液态。在半导体元件4的角部以外的位置(即，未形成有凹陷部10的位置)，成为在半导体元件4的下表面42与散热片6的上表面6a之间填充有液态的焊料8的状态。此时，位于半导体元件4的下表面42的角部(即，与凹陷部10重叠的位置)的焊料8向凹陷部10流入，并积存在凹陷部10的底部。凹陷部10的体积以比位于凹陷部10的上侧的焊料8的体积大的方式预先设计。因此，半导体元件4的下表面42的角部与散热片6的上表面6a之间成为未填充有液态的焊料8的状态。此外，也可以对散热片6的上表面6a预先进行提高焊料8的润湿性的表面处理。作为表面处理，例如能够使用镀Ni、镀Au。另外，该表面处理也可以对半导体元件4的下表面42进行。另外，半导体装置2也可以构成为，对与上述面44和凹陷部10相当的位置不进行该表面处理。由此，防止在半导体元件4的角部存在焊料8。其结果是，防止半导体元件4的角部和散热片6固定。
接着，使半导体装置2的温度下降到焊料8的熔点以下的温度。通过温度下降，液态的焊料8成为固体状。由此，半导体元件4的下表面42(详细来说，下表面42的一部分即面46)和散热片6的上表面6a由成为固体状的焊料8相互固定。另一方面，在液态的焊料8未填充的凹陷部10，即使使温度下降，半导体元件4的下表面42(详细来说，下表面42的一部分即面44)和散热片6的上表面6a也不会固定。
在本实施例的半导体装置2中，容易产生热应力的半导体元件4的角部和散热片6未被相互固定。由此，在半导体装置2的温度变化时，能够降低半导体元件4产生的热应力。另外，由于仅采用半导体元件4的角部和散热片6未被相互固定的结构，因此，能够抑制半导体装置2的体积增大。
另外，如上所述，半导体元件4在半导体元件4的(具体来说，半导体基板的)俯视图中央部具有有源区域4a，在半导体元件4的外周缘部具有周边区域4b。周边区域4b与有源区域不同，不会由于半导体元件4的使用而发热。因此，在半导体元件4中，半导体元件4的中央部的温度有时比半导体元件4的角部的温度高。另外，半导体元件4的周边缘部容易向周围释放热。另一方面，半导体元件4的中央部难以向周围释放热。由此，在矩形形状的半导体元件4中，半导体元件4的中央部的温度有时也比半导体元件4的角部的温度高。
在半导体元件4的中央部的温度比半导体元件4的角部的温度高的情况下，从半导体元件4的角部传递到散热片6的热量比从半导体元件4的中央部传递到散热片6的热量小。在本实施例的半导体装置2中，半导体元件4的下表面42和散热片6的上表面6a没有固定的位置为所传递的热量较小的角部的位置。因此，将半导体元件4的下表面42和散热片6的上表面6a部分地固定，并抑制从半导体元件4传递到散热片6的热量降低。
凹陷部10俯视观察时也可以形成于半导体装置2的与周边区域4b重叠的位置。由此，抑制因凹陷部10而妨碍热从半导体元件4向散热片6的传递。由此，抑制半导体装置2的散热性能变差。
在将半导体元件4固定于散热片6的半导体装置2中，从半导体元件4产生的热经由焊料8传递到散热片6。在图2中，从半导体元件4产生的热从焊料8所处的区域朝向散热片6的内部侧(图2下侧)传递。在热朝向散热片6的内部侧传递时，不仅从焊料8所处的区域笔直地朝向下方传递，而且比焊料8所处的区域更扩散并传递。即，从散热片6的上表面6a朝向散热片6的内部传递热的传热路径以从散热片6的上表面6a朝向散热片6的较深位置逐渐扩散的方式形成。在本实施例的半导体装置2中，凹陷部10的内表面和半导体元件4的矩形的面形成的角度θ形成为比45°小的角度。因此，通过在散热片6形成凹陷部10，抑制上述传热路径的宽度减小。由此，抑制因凹陷部10而使半导体装置2的散热性能变差。
在本实施例的半导体装置2中，凹陷部10形成在散热片6的上表面6a。因此，在半导体装置2的制造工序中，在将焊料片、半导体元件4、工具(例如，用于使焊料8回流的工具)等配置于散热片6的上表面6a时，能够使用凹陷部10作为对位用标记。
在本实施例的半导体装置2中，凹陷部10通过冲压加工形成。因此，与通过切削加工等形成凹陷部10的情况不同，不会因凹陷部10的加工而使散热片6的体积减小。因此，散热片6的热容量不会减小。由此，抑制半导体装置2的散热性能降低。
在上述实施例中，在半导体元件4与散热片6之间配置焊料片，之后使温度上升，从而在半导体元件4与散热片6之间填充液态的焊料8。但是，也可以通过在半导体元件4的下表面或散热片6的上表面6a的任一面上涂敷液态的焊料8，而填充液态的焊料8。
在上述实施例中，凹陷部10俯视观察时为三角形。但是，凹陷部10也可以为其他形状。例如，凹陷部10也可以为半圆形、圆形、椭圆、矩形、多边形等。另外，在上述实施例中，凹陷部10通过冲压加工形成。但是，凹陷部10也可以通过切削加工等其他方法形成。
实施例2
如图5、图6所示，实施例2的半导体装置102具备：半导体元件4、散热片106和中间部件104。散热片106与实施例1的散热片6同样地由Cu(铜)形成。在散热片106的上表面106a配置有中间部件104。中间部件104为板状，俯视观察时为矩形形状。但是，中间部件104形成为俯视观察时角部被倒角的形状。中间部件104由金属形成。作为形成中间部件104的材料，例如能够使用CuMo(钼铜)。对形成中间部件104的材料，在后面详细地进行说明。散热片106的上表面106a和中间部件104的下表面由焊料8固定。
半导体元件4配置于中间部件104的上表面。中间部件104的上表面和半导体元件4的下表面42由焊料8固定。但是，通过对中间部件104进行倒角，中间部件104不位于半导体元件4的角部所处的位置。因此，半导体元件4的角部和中间部件104未被相互固定。
在本实施例的半导体装置102中，容易产生热应力的半导体元件4的角部和中间部件104未被相互固定。由此，在半导体装置102的温度发生变化时，能够降低半导体元件4产生的热应力。
在将半导体元件4的线膨胀系数设为α1、将中间部件104的线膨胀系数设为α2、将散热片106的线膨胀系数设为α3时，中间部件104的材料以α1≤α2＜α3的关系成立的方式进行选择。例如，在半导体元件4(具体来说，半导体基板)由SiC形成、散热片106由Cu(铜)形成的情况下，作为形成中间部件104的材料，能够使用CuMo(钼铜)。另外，在半导体元件4的线膨胀系数α1比散热片106的线膨胀系数α3大的情况下，也可以以α1≥α2＞α3的方式选择中间部件104的材料。此外，中间部件104的线膨胀系数α2也可以与半导体元件4的线膨胀系数α1相等。
半导体元件4的线膨胀系数和散热片106的线膨胀系数存在差异。因此，在将半导体元件4利用焊料直接固定于散热片106的半导体装置中，当半导体装置的温度上升时，产生与半导体元件4的尺寸变化量和散热片106的尺寸变化量之差对应的热应力。在实施例2的半导体装置102中，半导体元件4和散热片106经由中间部件104被固定。另外，中间部件104的线膨胀系数α2满足α1≤α2＜α3的关系。通过满足上述关系，半导体元件4的尺寸变化量和中间部件104的尺寸变化量的差异比半导体元件4的尺寸变化量和散热片106的尺寸变化量的差异小。因此，在本实施例的半导体装置102中，与半导体元件4直接固定于散热片106的情况相比，能够降低半导体元件4产生的热应力。
(比较例)
以下，对比较例的半导体装置(未图示)的热应力分析的数值计算结果进行说明(参照图7)。该热应力分析模拟了冷热循环试验。比较例的半导体装置为与实施例1的半导体装置2大致相同的结构。因此，使用图1，对比较例的半导体装置的结构进行说明。比较例的半导体装置与实施例1的半导体装置2同样地，在散热片6的上表面固定有半导体元件4(参照图1)。但是，在比较例中，与实施例1不同，在散热片6的表面没有形成有凹陷部10。因此，在比较例的半导体装置中，半导体元件4的整个下表面42(包含角部)固定于散热片6的上表面。
图7所示的数值计算结果为非线性应变振幅。图7示出非线性应变振幅的大小相对较大的区域204和相对较小的区域202的分布。非线性应变振幅通过(塑性应变+蠕变应变)/2的式子求算。此外，在非线性应变振幅的大小较大的位置，半导体元件4产生的热应力的大小也较大。非线性应变振幅相对较大的区域204位于半导体元件4的下表面200的角部。即，图7示出在半导体元件4的角部产生的热应力比其他部分大。在实施例1、实施例2的半导体装置2、102中，如上所述，热应力容易变大的半导体元件4的下表面42的角部和散热片未被相互固定。因此，在实施例1、实施例2的半导体装置2、102中，能够有效地降低半导体元件4产生的热应力。
在上述实施例中，半导体元件4具备SiC基板。但是，半导体元件4也可以具备Si基板。
在上述实施例1中，半导体元件4的下表面42与散热片6的没有形成有凹陷部10的部分之间由焊料8固定。但是，也可以存在两者之间部分未被固定的部位(例如空隙等)。同样，也可以存在上述实施例2的半导体元件4的下表面42与中间部件104的上表面之间部分未被固定的部位。
以上，对本发明的具体例详细地进行了说明，但这些只不过是例示，并不限定权利要求的范围。权利要求范围所记载的技术包含对以上例示的具体例进行了各种变形、变更的技术。另外，本说明书或附图中说明的技术要素单独或者通过各种组合而发挥技术实用性，不限于申请时权利要求中记载的组合。另外，本说明书或附图中例示的技术能够同时实现多个目的，实现其中一个目的的技术自身具有技术实用性。

Claims (3)

1.一种半导体装置，具备：
俯视观察时呈矩形形状的半导体元件；和
供半导体元件固定的被固定部件，
半导体元件被配置为其矩形形状的面朝向被固定部件的表面，
半导体元件的矩形形状的面的一部分固定于被固定部件的表面，
半导体元件的矩形形状的面的至少角部未固定于被固定部件的表面。
2.根据权利要求1所述的半导体装置，其中，
半导体元件的矩形形状的面由接合材料固定于被固定部件的表面，
在被固定部件的表面，在矩形形状的面的角部所处的位置形成有凹陷。
3.根据权利要求1所述的半导体装置，其中，
半导体装置还具备配置在半导体元件的矩形形状的面与被固定部件的表面之间的中间部件，
半导体元件和被固定部件经由中间部件相互固定，
中间部件不位于矩形形状的面的至少角部与被固定部件的表面之间。
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