CN109196629B - 接合装置 - Google Patents
接合装置 Download PDFInfo
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- CN109196629B CN109196629B CN201780032363.5A CN201780032363A CN109196629B CN 109196629 B CN109196629 B CN 109196629B CN 201780032363 A CN201780032363 A CN 201780032363A CN 109196629 B CN109196629 B CN 109196629B
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Abstract
本发明包括:加热器(11);以及接合工具(20),具有对存储器芯片(60)进行吸附的下表面(24)及安装于加热器(11)的上表面(22),下表面(24)的第1周缘区域(A)将存储器芯片(60)的周缘部(60a)按压至焊料球(41),第1中央区域(B)将存储器芯片(60)的中央部(60b)按压至耐热温度低于焊料球(41)的DAF(44),并且,从第1中央区域(B)传递至存储器芯片(60)的中央部(60b)的热量小于从第1周缘区域(A)传递至存储器芯片(60)的周缘部(60a)的热量。由此,可提供一种能够将接合构件的中央部加热为低于周缘部的温度的接合装置。
Description
技术领域
本发明涉及一种接合装置,尤其是涉及一种接合装置中所使用的接合工具及载物台 (stage)的结构。
背景技术
近年来,为了应对半导体装置的小型化及高度化的要求而使用层压有多个半导体芯片(chip)的三维封装结构。作为三维封装结构,例如提出有如下结构(例如,参照专利文献1):在基板之上形成两个间隔件(spacer),在两个间隔件之间安装控制器芯片(controller chip),在两个间隔件之上经由管芯粘接膜(Die Attach Film,以下,称为DAF)等粘接层以跨过控制器芯片之上的方式安装第一层的存储器芯片,并在第一层的存储器芯片之上经由粘接层层压多个存储器芯片。DAF是热硬化性树脂的膜。
而且,提出有如下三维封装结构(例如,参照专利文献2):构成如下两个模块,即,在中央具有开口的第2基板的上表面经由DAF而层压多层半导体芯片并在基板的下表面形成有焊料球的上部半导体模块、及在与构成上部半导体模块的第2基板的开口相对应的位置的第1基板之上层压有小于开口的大小的半导体芯片的下部半导体模块,对层压于下部半导体模块的半导体芯片的上表面涂布粘接剂并使上部半导体模块与下部半导体模块合在一起,通过回流(reflow)使焊料球熔融并且使粘接剂硬化,从而将上部半导体模块与下部半导体模块接合。
另一方面,作为半导体芯片与基板或半导体芯片彼此之间的接合方法,多使用在半导体芯片上形成焊料凸块(solder bump)或金凸块,并在形成有凸块的半导体芯片的面上贴上膜状的绝缘树脂,之后,反转半导体芯片,通过接合工具将半导体芯片热压接于基板之上,并使焊料凸块或金凸块熔融,而可进行基板与半导体芯片的接合并进行半导体芯片与基板之间的密封树脂的硬化的倒装芯片接合(flip chip bonding)。在倒装芯片接合中,若在半导体芯片内的焊料凸块或金凸块的熔融状态中存在不均,则存在温度低的部分的焊料凸块或金凸块成为未熔融的状态,从而引起接合不良的可能性,所以提出有为了能够对半导体芯片均匀地加热而使与半导体芯片的接触密度疏密分布的夹头 (collet)(接合工具)(例如,参照专利文献3)。
现有技术文献
专利文献
专利文献1日本专利特开2015-176906号公报
专利文献2日本专利特开2008-166527号公报
专利文献3日本专利特开2012-199358号公报
发明内容
发明所要解决的问题
然而,作为更有效率地制造专利文献1所记载的三维结构的半导体装置的方法,研究了在控制器芯片的上表面利用DAF等热硬化性树脂的膜粘接存储器芯片的中央部分,并且利用通过焊料球等的热熔融后的硬化来进行金属构件间的连接的连接用金属将存储器芯片的周缘部分连接于基板的接合方法。所述接合方法应用了专利文献3所记载的倒装芯片接合方法,将由加热器加热了的存储器芯片按压在控制器芯片之上,通过使DAF 热硬化将存储器芯片的中央部分接着固定于控制器芯片,同时将存储器芯片的周缘部分按压于接合用金属之上并使接合用金属熔融来进行存储器芯片与基板的电性接合。
但是,DAF的耐热温度低于焊料球等接合用金属的熔融温度,所以存在若将存储器芯片加热至接合用金属的熔融温度则DAF会劣化的问题。相反,在只将存储器芯片加热至DAF的耐热温度的情况下,存在接合用金属未充分熔融,无法良好地进行存储器芯片与基板的电性接合的问题。因此,此种接合方法无法在专利文献3所记载的对半导体芯片均匀地加热的接合装置中执行,所以期望一种能够以使存储器芯片(接合构件)的中央部分的温度低于周缘部分的温度的方式对存储器芯片(接合构件)进行加热的接合装置。
因此,本发明的目的在于提供一种能够将接合构件的中央部加热为低于周缘部的温度的接合装置。
解决问题的技术手段
本发明的接合装置的特征在于包括:加热器;以及接合工具,具有对接合构件进行吸附的第1面及与第1面为相反侧的安装于加热器的第2面,第1面的第1周缘区域将接合构件的周缘部按压至第1构件,第1面的第1中央区域将接合构件的中央部按压至耐热温度低于第1构件的第2构件,从接合工具的第1中央区域传递至接合构件的中央部的接合构件的单位面积的热量小于从接合工具的第1周缘区域传递至接合构件的周缘部的接合构件的单位面积的热量,所述接合工具的所述第1中央区域具有流动冷却空气的冷却流路。
在本发明的接合装置中,也优选:接合工具的第1中央区域比接合工具的第1周缘区域与接合构件的接触面积小。
在本发明的接合装置中,也优选:接合工具的第1中央区域包括导热率低于接合工具的第1周缘区域的材料。
在本发明的接合装置中,也优选:接合工具的第2面具有与第1中央区域相对应的第2中央区域及第2中央区域的外周侧的第2周缘区域,从加热器的中央部传递至接合工具的第2中央区域的加热器的单位面积的热量小于从加热器的周缘部传递至接合工具的第2周缘区域的加热器的单位面积的热量。
在本发明的接合装置中,也优选:接合工具的第2中央区域比接合工具的第2周缘区域与加热器的接触面积小。
在本发明的接合装置中,也优选:在接合工具的第2中央区域,呈格子状地配置有多个凹部。
在本发明的接合装置中,也优选:接合工具的第2中央区域具有流动冷却空气的冷却流路。
在本发明的接合装置中,也优选:接合工具的第2中央区域包括导热率低于接合工具的第2周缘区域的材料。
在本发明的接合装置中,也优选:包括对基板进行吸附固定的载物台,第2构件载置在接合于基板的电子零件之上,第1构件形成于电子零件的周围的基板之上,从接合有电子零件的基板的第1区域传递至与基板的第1区域相向的载物台的第1部分的基板的单位面积的热量大于从配置有第1构件的基板的第2区域传递至与基板的第2区域相向的载物台的第2部分的基板的单位面积的热量。
在本发明的接合装置中,也优选:载物台中,在第1部分设有流动冷却空气的冷却流路。
本发明的接合装置的特征在于包括:加热器;以及接合工具,接合工具具有对接合构件进行吸附的第1面及与所述第1面为相反侧的安装于所述加热器的第2面,所述第1 面具有第1周缘区域及第1中央区域,所述第1中央区域形成有凹部,所述第1面的所述第1周缘区域将所述接合构件的周缘部按压至第1构件,所述第1面的所述第1中央区域将所述接合构件的中央部按压至耐热温度低于所述第1构件的第2构件,所述接合工具更具有真空孔,所述真空孔从所述第2面连通至所述凹部而吸附所述接合构件,并同时在所述凹部与所述接合构件之间形成真空隔热层的真空孔,从所述接合工具的所述第1中央区域传递至所述接合构件的中央部的所述接合构件的单位面积的热量小于从所述接合工具的所述第1周缘区域传递至所述接合构件的周缘部的所述接合构件的单位面积的热量,所述接合工具的所述第1中央区域具有流动冷却空气的冷却流路。在本发明的接合装置中,也优选:在接合工具的所述第1中央区域,呈格子状地配置有多个凹部。另外,在本发明的接合装置中,也优选:接合工具的第2面具有与第1中央区域相对应的第2中央区域及第2中央区域的外周侧的第2周缘区域,从加热器的中央部传递至接合工具的第2中央区域的加热器的单位面积的热量小于从加热器的周缘部传递至接合工具的第2周缘区域的加热器的单位面积的热量,接合工具的第2中央区域与加热器的接触面积小于接合工具的第2周缘区域与所述加热器的接触面积。此外,在本发明的接合装置中,也优选:在接合工具的第2中央区域,呈格子状地配置有多个凹部;也优选:接合工具的第2中央区域具有流动冷却空气的冷却流路。也优选:接合工具的第2中央区域包括导热率低于接合工具的第2周缘区域的材料。此外,在本发明的接合装置中,也优选:包括对基板进行吸附固定的载物台,第2构件载置在接合于基板的电子零件之上,第1构件形成于电子零件的周围的基板之上,从接合有电子零件的基板的第1区域传递至与基板的第1区域相向的载物台的第1部分的基板的单位面积的热量大于从配置有第1构件的基板的第2区域传递至与基板的第2区域相向的载物台的第2部分的基板的单位面积的热量。进而,在本发明的接合装置中,也优选:载物台中,在第1部分设有流动冷却空气的冷却流路。也优选:载物台中,在第2部分的表面设有凹部。
发明的效果
本发明可提供一种能够将接合构件的中央部加热为低于周缘部的温度的接合装置。
附图说明
图1是本发明的第1实施方式的接合装置的剖面图。
图2是从下侧对安装于图1所示的接合装置的接合工具进行观察的立体图。
图3是表示通过图1所示的接合装置将由加热器加热了的存储器芯片的中央部按压于控制器芯片上的DAF,并且将存储器芯片的周缘部按压于形成于基板之上的焊料球之上的状态的说明图。
图4是本发明的第2实施方式的接合装置的剖面图。
图5是从下侧对安装于图4所示的接合装置的接合工具进行观察的立体图。
图6是表示通过图4所示的接合装置将由加热器加热了的存储器芯片的中央部按压于控制器芯片上的DAF,并且将存储器芯片的周缘部按压于形成于基板之上的焊料球之上的状态的说明图。
图7是本发明的第3实施方式的接合装置的剖面图。
图8是本发明的第4实施方式的接合装置的剖面图。
图9是从上侧对安装于图8所示的接合装置的接合工具进行观察的立体图。
图10是表示通过图8所示的接合装置将由加热器加热了的存储器芯片的中央部按压于控制器芯片上的DAF,并且将存储器芯片的周缘部按压于形成于基板之上的焊料球之上的状态的说明图。
图11是本发明的第5实施方式的接合装置的剖面图。
图12是从上侧对安装于图11所示的接合装置的接合工具进行观察的立体图。
图13是表示通过图11所示的接合装置将由加热器加热了的存储器芯片的中央部按压于控制器芯片上的DAF,并且将存储器芯片的周缘部按压于形成于基板之上的焊料球之上的状态的说明图。
图14是本发明的第6实施方式的接合装置的剖面图。
图15是本发明的第7实施方式的接合装置的剖面图。
图16是本发明的第8实施方式的接合装置的剖面图。
图17是表示图16所示的接合装置的载物台的立体图。
[符号的说明]
10:接合头
11:加热器
12、13、30、55:真空孔
14、15、29、35、54:空气孔
20:接合工具
21:基台
21a、50a:表面
22:上表面
23:岛
23a、25、32、33、34、51、56:凹部
24:下表面
25a:肋条
26、52:间隔壁
27、53:突起
28、58:冷却流路
28a:外周冷却流路
28b:内周冷却流路
31、39:隔热材
34a、59:台座
40:基板
41:焊料球
42:控制器芯片
43:树脂
44:DAF
50:载物台
50b:第1部分
50e:第2部分
60:存储器芯片
60a:周缘部
60b:中央部
87、88、89、91~99:箭头
100、200、300、400、500、600、700、800:接合装置
A:第1周缘区域
B:第1中央区域
C:第2周缘区域
D:第2中央区域
E:第1区域
F:第2区域
VAC:真空装置
具体实施方式
<第1实施方式>
以下,参照附图对本发明的第1实施方式进行说明。如图1所示,本实施方式的接合装置100包括:对基板40进行真空吸附的载物台50、配置于载物台50之上由未图示的驱动装置沿上下方向驱动的接合头10、安装于接合头10的下表面的加热器11、及安装于加热器11的下表面的接合工具20。另外,图1中所示的上、下的指示字是表示垂直上方、垂直下方。在其他图中也一样。
如图1、图2所示,接合工具20包括四方板状的基台(base)21及从基台21的下侧的表面21a呈四方台座状地突出的岛(island)23。接合工具20的第1面即岛23的下表面24对接合构件即存储器芯片60进行真空吸附。图1示出了在接合工具20的下表面24 真空吸附有存储器芯片60的状态。岛23为比基台21小,并且与真空吸附于下表面24 的存储器芯片60大致相同的四方形状。
如图2所示,在接合工具20的下表面24的中央,呈格子状地配置有由宽度窄的肋条(rib)25围绕周围而成的多个凹部25。肋条25a的前端面以与存储器芯片60的上表面相接的方式与下表面24成为同一平面。在接合工具20的中心的肋条25a的前端面设有真空孔30。
下表面24的配置有多个凹部25的范围为接合工具20的第1中央区域B,下表面24的第1中央区域B的外周侧在图2中标注有影线的范围为接合工具20的第1周缘区域A。而且,与接合工具20的第1中央区域B相向的存储器芯片60的范围为存储器芯片60的中央部60b(接合构件的中央部),与接合工具20的第1周缘区域A相向的存储器芯片 60的范围为存储器芯片60的周缘部60a(接合构件的周缘部)。
在接合头10、加热器11设有未图示的真空孔,接合工具20通过真空吸附而固定于加热器11的下表面。因此,加热器11能够容易地更换。在本实施方式中,安装有如下接合工具20,即第1中央区域B与之后进行说明的封装于基板40之上的控制器芯片42 的大小相同,第1周缘区域A覆盖(cover)之后进行说明的形成于基板40之上的焊料球41的范围。
加热器11例如是在氮化铝等陶瓷的内部埋入包括铂或钨等的发热电阻体而成。如图 1所示,加热器11为四方板状,其大小与接合工具20的基台21大致相同。在加热器11 的中心设有与接合工具20的真空孔30连通的真空孔13。如图1所示,在接合头10设有与加热器11的真空孔13、接合工具20的真空孔30连通的真空孔12。连通的真空孔12、真空孔13、真空孔30连接于真空装置VAC,将存储器芯片60真空吸附于接合工具20 的下表面24。
如图1所示,载物台50将基板40真空吸附于表面50a。接合头10能够在水平方向上移动,图1示出了使接合头10的水平方向的中心位置对准控制器芯片42的中心位置的状态。
在图1所示的基板40的中央接合有控制器芯片42,控制器芯片42与基板40之间由树脂43密封。在控制器芯片42的上表面载置有第2构件即DAF 44。在基板40的上表面的控制器芯片42的周围形成有第1构件即多个焊料球41。控制器芯片42小于存储器芯片60或接合工具20的岛23的大小,与接合工具20的第1中央区域B或存储器芯片 60的中央部60b为大致相同的大小。而且,如图1所示,若将接合头10的水平方向的中心位置对准控制器芯片42的中心位置,则焊料球41位于与接合工具20的第1周缘区域 A或存储器芯片60的周缘部60a相向的范围。
如图3所示,当接合装置100的未图示的控制部使接合头10从图1所示的状态起朝载物台50下降时,存储器芯片60的中央部60b的下表面通过经由接合工具20的肋条25a 传递来的朝下的负载而将载置于控制器芯片42之上的DAF 44朝下按压。存储器芯片60 的周缘部60a的下表面通过经由接合工具20的第1周缘区域A传递来的朝下的负载而将焊料球41朝下按压。而且,若接通加热器11,则加热器11的热如箭头91所示,穿过接合工具20的第1周缘区域A而对存储器芯片60的周缘部60a进行加热,存储器芯片60 的周缘部60a对焊料球41进行加热。而且,加热器11的热如箭头92所示,穿过接合工具20的第1中央区域B而对存储器芯片60的中央部60b进行加热,存储器芯片60的中央部60b对载置于控制器芯片42之上的DAF 44进行加热。
如图2所示,在接合工具20的下表面24的第1中央区域B,呈格子状地排列有多个凹部25。当在接合工具20的下表面24真空吸附有存储器芯片60时,凹部25内的空气被从真空孔30吸出至真空装置VAC,凹部25成为真空的隔热层。因此,来自加热器11 的热不会穿过凹部25而到达存储器芯片60,而是如图3的箭头92所示,借由与存储器芯片60的上表面相接的肋条25a的前端面而到达存储器芯片60。另一方面,接合工具 20的第1周缘区域A为平面,与存储器芯片60的上表面接触。因此,来自加热器11的热如图3的箭头91所示,从接合工具20的第1周缘区域A的整个面到达存储器芯片60。
此处,接合工具20的肋条25a的前端面与存储器芯片60的中央部60b的接触面积小于接合工具20的第1周缘区域A与存储器芯片60的周缘部60a的接触面积。而且,如前所述,由凹部25形成的隔热层几乎不会使加热器11的热通过。因此,从接合工具 20的第1中央区域B到达存储器芯片60的中央部60b的存储器芯片60的单位面积的热量变得小于从接合工具20的第1周缘区域A传递至存储器芯片60的周缘部60a的存储器芯片60的单位面积的热量。因此,在由加热器11对接合工具20的上表面22进行了均等加热的情况下,存储器芯片60的中央部60b的单位面积的热输入变得小于存储器芯片60的周缘部60a的单位面积的热输入,从而存储器芯片60的中央部60b的温度变得低于存储器芯片60的周缘部60a。
由此,例如,即使在由加热器11将与焊料球41相接的存储器芯片60的周缘部60a的温度加热到了焊料球进行熔融的230℃以上的情况下,也可将与DAF 44相接的存储器芯片60的中央部60b的温度抑制为低于DAF的耐热温度即200℃。焊料球41在被存储器芯片60的周缘部60a加热至230℃以上时熔融,DAF 44在低于200℃例如180℃左右开始热硬化,所以接合装置100可通过使焊料球41熔融并且使耐热温度低于焊料球41 的熔融温度的DAF44在不劣化的情况下热硬化,而将存储器芯片60封装于基板40、控制器芯片42之上。
若利用存储器芯片60对焊料球41及DAF 44按压并加热了规定时间,则接合装置100的未图示的控制部在开放未图示的真空孔12、真空孔13、真空孔30的真空之后,使接合头10上升。此时,存储器芯片60经由DAF 44而固定于控制器芯片42。并且,若接合头上升而不再有来自加热器11的热输入,则焊料球41硬化而完成存储器芯片60与基板40的电气接合。
如以上所说明般,本实施方式的接合装置100因在对作为接合构件的存储器芯片60 进行吸附的接合工具20的下表面24呈格子状地配置多个凹部25,所以即使利用加热器11对接合工具20进行均等的加热,也可使存储器芯片60的中央部60b的单位面积的热输入小于存储器芯片60的周缘部60a的单位面积的热输入,从而使存储器芯片60的中央部60b的温度低于存储器芯片60的周缘部60a。由此,可通过使焊料球41熔融并且使耐热温度低于焊料球41的熔融温度的DAF 44在不劣化的情况下热硬化,而将存储器芯片60封装于基板40、控制器芯片42之上。
而且,接合工具20是通过未图示的真空吸附孔而吸附固定于加热器11的下表面,所以可配合进行接合的存储器芯片60的大小容易地更换为岛23的大小不同的接合工具20。并且,通过配合已封装于基板40的控制器芯片42的大小、焊料球41的形成位置,准备多种第1中央区域B与第1周缘区域A的范围不同的接合工具20,并根据控制器芯片42的大小、焊料球41的位置更换接合工具20,可对应多种多样的基板40。如此,本实施方式的接合装置100中,仅通过根据接合构件即存储器芯片60的大小、第1构件即焊料球41的形成位置、载置第2构件即DAF 44的控制器芯片42的大小来更换接合工具 20,便可利用同一加热器将多个种类的接合构件接合于多种多样的基板。
在以上的说明中,对通过焊料球41来接合存储器芯片60与基板40进行了说明,但即使使用硬化开始温度、耐热温度高于DAF 44的耐热温度的导电性树脂构件来代替焊料球41,也与所述内容同样地,可通过在不使耐热温度低于导电性树脂构件的硬化开始温度的DAF 44劣化的情况下使导电性树脂构件与DAF 44这两者热硬化,而将存储器芯片 60封装于基板40、控制器芯片42之上。而且,在本实施方式中,以接合构件为存储器芯片60进行了说明,但接合构件既可以是其他电子零件也可以是树脂基板等。
<第2实施方式>
其次,参照图4至图6对本发明的第2实施方式的接合装置200进行说明。接合装置200在接合工具20的下表面24具有图4、图5所示那样的流动冷却空气的冷却流路 28以代替第1实施方式的接合装置100的凹部25。对与之前参照图1至图3而说明的第 1实施方式的接合装置100相同的部分标注相同的符号并省略说明。
如图5所示,在接合工具20的下表面24形成有对第1中央区域B进行规定的凹部23a。凹部23a的外周侧是第1周缘区域A。在图5中,标注有影线的范围为第1周缘区域A。在凹部23a之中,设有大致U字型的间隔壁26、及配置于间隔壁26的内周侧的多个突起27。在间隔壁26的与凹部23a的内周面相向的面跟凹部23a的内表面之间形成流动冷却空气的外周冷却流路28a。间隔壁26的内周侧成为冷却空气在多个突起27之间流动的内周冷却流路28b。间隔壁26的前端面及突起27的前端面以与存储器芯片60的上表面相接的方式与下表面24成为同一平面。外周冷却流路28a与内周冷却流路28b构成冷却流路28。
如图4、图5所示,在接合工具20的中心设有贯穿内周冷却流路28b与上表面22之间的真空孔30。而且,在接合工具20的凹部23a的内周面附近设有将外周冷却流路28a 与上表面22予以连通的空气孔29。如图4所示,真空孔30与设于加热器11的真空孔 13、设于接合头10的真空孔12连通,从而连通于真空装置VAC。而且,空气孔29与设于加热器11的空气孔15、设于接合头10的空气孔14连通。
如图4的箭头93所示,从空气孔14、空气孔15穿过空气孔29而流入至外周冷却流路28a的冷却空气如图5的箭头95、箭头96所示在沿凹部23a的内周面流动之后,从空气孔29的相反侧流入至内周冷却流路28b,并穿过突起27之间从真空孔30、真空孔13、真空孔12如图4的箭头94所示流向真空装置VAC。外周冷却流路28a、内周冷却流路 28b中虽流动有冷却空气,但压力接近于真空,从而对存储器芯片60进行真空吸附。
如图6所示,与第1实施方式的接合装置100同样地,当接合装置200的未图示的控制部使接合头10从图4所示的状态起朝载物台50下降时,存储器芯片60的中央部60b 的下表面通过经由接合工具20的间隔壁26及突起27传递来的朝下的负载而将载置于控制器芯片42之上的DAF 44朝下按压,存储器芯片60的周缘部60a的下表面通过经由接合工具20的第1周缘区域A传递来的朝下的负载而将焊料球41朝下按压。而且,加热器11的热如图6的箭头91所示穿过接合工具20的第1周缘区域A而对存储器芯片60 的周缘部60a进行加热,存储器芯片60的周缘部60a对焊料球41进行加热。而且,加热器11的热如图6的箭头92所示,穿过接合工具20的形成有外周冷却流路28a、内周冷却流路28b的第1中央区域B而对存储器芯片60的中央部60b进行加热,存储器芯片60 的中央部60b对载置于控制器芯片42之上的DAF44进行加热。
因在第1中央区域B的外周冷却流路28a、内周冷却流路28b中流动有冷却空气,所以来自加热器11的热不会穿过各冷却流路28a、28b而到达存储器芯片60,而是如图6 的箭头92所示,借由与存储器芯片60的上表面相接的间隔壁26的前端面及突起27的前端面而到达存储器芯片60。另一方面,接合工具20的第1周缘区域A为平面,与存储器芯片60的上表面接触。因此,来自加热器11的热如图3的箭头91所示,从接合工具20的第1周缘区域A的整个面到达存储器芯片60。
此处,间隔壁26的前端面及突起27的前端面与存储器芯片60的中央部60b的接触面积小于接合工具20的第1周缘区域A与存储器芯片60的周缘部60a的接触面积。而且,因在周围流动有冷却空气,所以间隔壁26及突起27的温度变得低于第1周缘区域A 的温度。并且,如前所述,第1中央区域B的形成有各冷却流路28a、28b的区域几乎不会使加热器11的热通过。因此,与第1实施方式同样地,从接合工具20的第1中央区域B传递至存储器芯片60的中央部60b的存储器芯片60的单位面积的热量变得小于从接合工具20的第1周缘区域A传递至存储器芯片60的周缘部60a的存储器芯片60的单位面积的热量。因此,在由加热器11对接合工具20的上表面22进行了均等加热的情况下,存储器芯片60的中央部60b的单位面积的热输入变得小于存储器芯片60的周缘部 60a的单位面积的热输入,从而存储器芯片60的中央部60b的温度变得低于存储器芯片 60的周缘部60a。
由此,第2实施方式的接合装置200也与第1实施方式的接合装置100同样地,可通过使焊料球41熔融并且使耐热温度低于焊料球41的熔融温度的DAF 44在不劣化的情况下热硬化,而将存储器芯片60封装于基板40、控制器芯片42之上。
<第3实施方式>
其次,参照图7对第3实施方式的接合装置300进行说明。接合装置300如图7所示,在接合工具20的下表面24的第1中央区域B安装有导热率低于第1周缘区域A的隔热材31。对与之前参照图1至图3而说明的第1实施方式的接合装置100相同的部分标注相同的符号并省略说明。
本实施方式的接合装置300因在接合工具20的第1中央区域B安装有导热率低于第1周缘区域A的隔热材31,所以与之前所说明的第1实施方式、第2实施方式的接合装置100、接合装置200同样地,从接合工具20的第1中央区域B传递至存储器芯片60 的中央部60b的存储器芯片60的单位面积的热量变得小于从接合工具20的第1周缘区域A传递至存储器芯片60的周缘部60a的存储器芯片60的单位面积的热量。因此,在由加热器11对接合工具20的上表面22进行了均等加热的情况下,存储器芯片60的中央部60b的单位面积的热输入变得小于存储器芯片60的周缘部60a的单位面积的热输入,从而存储器芯片60的中央部60b的温度变得低于存储器芯片60的周缘部60a。
由此,第3实施方式的接合装置300也与第1实施方式、第2实施方式的接合装置100、接合装置200同样地,可通过使焊料球41熔融并且使耐热温度低于焊料球41的熔融温度的DAF 44在不劣化的情况下热硬化,而将存储器芯片60封装于基板40、控制器芯片42之上。
<第4实施方式>
其次,参照图8至图10对第4实施方式的接合装置400进行说明。接合装置400在第1实施方式的接合装置100的接合工具20的第2面即上表面22设有凹部32。在下表面24,与第1实施方式的接合装置100同样地,呈格子状地配置有多个凹部25。对与之前参照图1至图3而说明的第1实施方式的接合装置100相同的部分标注相同的符号并省略说明。
如图8、图9所示,第2面即上表面22的凹部32设于与下表面24的第1中央区域 B对应的范围,对第2中央区域D进行规定。凹部32的外周侧的上表面22为第2周缘区域C。在凹部32的中心设有与下表面24连通的真空孔30。而且,如图8所示,设于加热器11的真空孔13连通于凹部32。当通过未图示的真空装置VAC使与加热器11的真空孔13连通的接合头10的真空孔12成为真空时,接合工具20的上表面22的凹部32 与下表面24的多个凹部25也成为真空,并分别形成真空隔热层。
如图10所示,当接合装置400的未图示的控制部使接合头10从图8所示的状态起朝载物台50下降时,存储器芯片60的中央部60b的下表面通过经由接合工具20的肋条 25a传递来的朝下的负载而将载置于控制器芯片42之上的DAF 44朝下按压。存储器芯片60的周缘部60a的下表面通过经由接合工具20的第1周缘区域A传递来的朝下的负载而将焊料球41朝下按压。而且,若接通加热器11,则加热器11的热如箭头91所示,从接合工具20的第2周缘区域C穿过第1周缘区域A的整个面而对存储器芯片60的周缘部60a进行加热,存储器芯片60的周缘部60a对焊料球41进行加热。而且,加热器 11的热如箭头88所示,不会穿过作为隔热层的凹部32,而是从接合工具20的第2周缘区域C穿过第1中央区域B的肋条25a的前端面而对存储器芯片60的中央部60b进行加热,存储器芯片60的中央部60b对载置于控制器芯片42之上的DAF 44进行加热。
此处,接合工具20的肋条25a的前端面与存储器芯片60的中央部60b的接触面积小于接合工具20的第1周缘区域A与存储器芯片60的周缘部60a的接触面积。而且,流向肋条25a的热是从接合工具20的第2周缘区域C流来的热,其量小于从第2周缘区域C流向第1周缘区域A的热量。而且,如前所述,由凹部25形成的隔热层几乎不会使加热器11的热通过。因此,根据之前所说明的第1实施方式的情况,从接合工具20的第1中央区域B到达存储器芯片60的中央部60b的存储器芯片60的单位面积的热量变得更小,从而,存储器芯片60的中央部60b的单位面积的热输入变得更小。因此,存储器芯片60的中央部60b的温度变得更低。
由此,通过使用耐热温度低于第1实施方式的接合装置100的DAF 44,可通过使焊料球41熔融并且使耐热温度低于焊料球41的熔融温度的DAF 44在不劣化的情况下热硬化,而将存储器芯片60封装于基板40、控制器芯片42之上。
<第5实施方式>
其次,参照图11至图13对第5实施方式的接合装置500进行说明。如图11所示,第5实施方式的接合装置500在之前所说明的第4实施方式的接合装置400的接合工具 20的下表面24设有参照图4至图6而说明的冷却流路28,并在上表面22设有分隔出凹部34的凹部33及将凹部33与冷却流路28予以连通的空气孔35。对与参照图4至图6 而说明的第2实施方式的接合装置200及参照图8至图10而说明的第4实施方式的接合装置400相同的部位标注相同的符号并省略说明。
如图11、图12所示,第2面即上表面22的凹部34设于与下表面24的第1中央区域B对应的范围,对第2中央区域D进行规定。凹部34的外周侧的上表面22为第2周缘区域C。在凹部34的中心设有与下表面的内周冷却流路28b连通的真空孔30。而且,如图11所示,设于加热器11的真空孔13连通于凹部34。
如图12所示,在凹部34的其中一边,形成有向凹部34的内周侧突出,并在中间设有凹部33的台座34a。台座34a的表面与上表面22成为同一平面。凹部33与凹部34由台座34a的壁划分,并构成为不会连通空气。在凹部33设有连通于外周冷却流路28a的空气孔35。而且,如图11所示,加热器11的空气孔15连通于凹部33。另外,第2周缘区域C包含台座34a。
如图11的箭头93所示,从接合头10的空气孔14流入至加热器11的空气孔15的冷却空气流入至接合工具20的上表面22的凹部33,并从凹部33穿过空气孔35而流入至外周冷却流路28a。与之前参照图5所说明的内容同样地,流入至外周冷却流路28a的冷却空气如图5的箭头95、箭头96所示在沿凹部23a的内周面流动之后,流入至内周冷却流路28b,并穿过突起27之间从真空孔30流入至上表面22的凹部34。并且,流入至凹部34的空气穿过加热器11、接合头10的各真空孔13、12而如图11的箭头94所示流向真空装置VAC。外周冷却流路28a、内周冷却流路28b、凹部34中虽流动有冷却空气,但压力接近于真空。因此,接合工具20因凹部34的真空而被真空吸附于加热器11,冷却流路28的真空对存储器芯片60进行真空吸附。
如图13所示,当接合装置500的未图示的控制部使接合头10从图11所示的状态起朝载物台50下降时,存储器芯片60的中央部60b的下表面通过经由接合工具20的间隔壁26、突起27传递来的朝下的负载而将载置于控制器芯片42之上的DAF 44朝下按压。存储器芯片60的周缘部60a的下表面通过经由接合工具20的第1周缘区域A传递来的朝下的负载而将焊料球41朝下按压。而且,若接通加热器11,则加热器11的热如箭头 91所示,从接合工具20的第2周缘区域C穿过第1周缘区域A的整个面而对存储器芯片60的周缘部60a进行加热,存储器芯片60的周缘部60a对焊料球41进行加热。而且,加热器11的热如箭头87所示,不会穿过流动有冷却空气的凹部34,而是从接合工具20 的第2周缘区域C穿过第1中央区域B的间隔壁26的前端面及突起27的前端面而对存储器芯片60的中央部60b进行加热,存储器芯片60的中央部60b对载置于控制器芯片 42之上的DAF 44进行加热。
第5实施方式的接合装置500的接合工具20在上表面22的第2中央区域D的凹部34、下表面24的第1中央区域B的冷却流路28均流动冷却空气,所以与之前所说明的第4实施方式的接合装置400相比,存储器芯片60的中央部60b的单位面积的热输入变小,从而存储器芯片60的中央部60b的温度变得更低。
由此,接合装置500通过使用耐热温度低于之前所说明的第4实施方式的接合装置400的DAF 44,可通过使焊料球41熔融并且使耐热温度低于焊料球41的熔融温度的DAF 44在不劣化的情况下热硬化,而将存储器芯片60封装于基板40、控制器芯片42之上。
<第6实施方式>
其次,参照图14对第6实施方式的接合装置600进行说明。接合装置600在接合工具20的下表面24的第1中央区域B及上表面的第2中央区域D安装有导热率低于第1 周缘区域A、第2周缘区域C的隔热材31、隔热材39。对与之前参照图7而说明的第3 实施方式的接合装置300相同的部分标注相同的符号并省略说明。
本实施方式的接合装置600在接合工具20的第1中央区域B、第2中央区域D安装有导热率低于第1周缘区域A、第2周缘区域C的隔热材31、隔热材39,所以与之前所说明的第3实施方式的接合装置300相比,从接合工具20的第1中央区域B传递至存储器芯片60的中央部60b的存储器芯片60的单位面积的热量小,存储器芯片60的中央部 60b的单位面积的热输入也小,从而存储器芯片60的中央部60b的温度与接合装置300 时相比变低。
由此,接合装置600通过使用耐热温度低于之前所说明的第3实施方式的接合装置300的DAF 44,可通过使焊料球41熔融并且使耐热温度低于焊料球41的熔融温度的DAF 44在不劣化的情况下热硬化,而将存储器芯片60封装于基板40、控制器芯片42之上。
<第7实施方式>
其次,参照图15对本发明的第7实施方式的接合装置700进行说明。接合装置700在第1实施方式的接合装置100的载物台50设有冷却流路58。对与之前参照图1至图3 而说明的第1实施方式的接合装置100相同的部分标注相同的符号并省略说明。
如图15所示,接合装置700在与接合有控制器芯片42的基板40的第1区域E相向的载物台50的第1部分50b设置凹部51、并且与参照图5所说明的内容同样地,在所述凹部51之中设置大致U字型的间隔壁52,并在间隔壁52的内周侧设置突起53,从而形成有与参照图5而说明的内容相同的冷却流路58。在凹部51的其中一端设有使冷却空气流入至冷却流路58的空气孔54,在凹部51的中央设有使冷却空气与真空装置VAC连通的真空孔55。如图15的箭头89所示,从空气孔54流入至冷却流路58的空气流经冷却流路58之中后,如图15的箭头99所示,从真空孔55排出。在冷却流路58中虽流动冷却空气,但其压力为大致真空,从而对基板40进行真空吸附。
基板40的封装有控制器芯片42的范围的外侧为基板40的第2区域F,基板40的第 2区域F与载物台50的表面50a接触。在基板40的第2区域F形成有焊料球41。与基板40的第2区域F相向的载物台50的区域为载物台50的第2部分50c。
如图15所示,当接合装置700的未图示的控制部使接合头10朝载物台50下降时,加热器11的热如图15的箭头97所示穿过接合工具20的第1周缘区域A而对存储器芯片60的周缘部60a进行加热,存储器芯片60的周缘部60a对焊料球41进行加热。焊料球41的热从基板40的第2区域F流向载物台50的第2部分50c。而且,加热器11的热如图15的箭头98所示,穿过接合工具20的第1中央区域B而对存储器芯片60的中央部60b进行加热,存储器芯片60的中央部60b对载置于控制器芯片42之上的DAF 44进行加热。并且,对DAF 44加热后的热穿过控制器芯片42、树脂43而流向载物台50的第1部分50b。
因在载物台50的冷却流路58中流动有冷却空气,所以热变得容易从基板40的第1区域E流向载物台50的第1部分50b。另一方面,形成有焊料球41的基板40的第2区域F与载物台50的表面50a相接,但未形成有冷却流路58,所以与第1区域E相比,从基板40流向载物台50的第2部分50c的热量变少。即,从基板40的第1区域E传递至载物台50的第1部分50b的基板40的单位面积的热量变得大于从基板40的第2区域传递至载物台50的第2部分的基板40的单位面积的热量。因此,基板40的中央的第1区域E的温度变得低于周围的基板40的第2区域F的温度。由此,载置于封装在基板40 的第1区域E的控制器芯片42之上的DAF 44的温度变得低于形成于基板40的第2区域 F的焊料球41的温度。
因此,在接合装置700中,与之前所说明的第1实施方式的接合装置100相比,DAF44的温度变得更低,通过使用耐热温度低于接合装置100的DAF 44,可通过使焊料球 41熔融并且使耐热温度低于焊料球41的熔融温度的DAF 44在不劣化的情况下热硬化,而将存储器芯片60封装于基板40、控制器芯片42之上。
另外,在接合装置700中,若使用导热率低的材料作为载物台50的材料,则从基板40的第2区域F逃逸至载物台50的第2部分50c的热量变少,从而可将焊料球41的温度保持得高。因此,若以陶瓷系的材料来构成载物台50,则可获得更大的效果。
<第8实施方式>
其次,参照图16对第8实施方式的接合装置800进行说明。接合装置800将载物台50的第1部分50b设为平面结构,并在第2部分50c设有凹部56。在以下的说明中,对与之前参照图1至图3而说明的接合装置100及参照图15而说明的接合装置700相同的部分标注相同的符号并省略说明。接合装置800的载物台50与之前所说明的接合装置700 不同,是包括导热率高的例如铜或铁等材料。
设于载物台50的第2部分50c的凹部56构成空气的隔热层,所以对热从基板40的第2区域F向载物台50的第2部分50c的流动进行阻断。另一方面,载物台50包括铜或铁等导热率高的材料,所以从基板40的第1区域E向载物台50的第1部分50b的热阻抗变得低于从基板40的第2区域F向载物台50的第2部分50c的热阻抗。因此,从基板40的第1区域E传递至载物台50的第1部分50b的基板40的单位面积的热量变得大于从基板40的第2区域传递至载物台50的第2部分50c的基板40的单位面积的热量,从而基板40的中央的第1区域E的温度变得低于周围的基板40的第2区域F的温度。由此,与之前所说明的接合装置700同样地,载置于封装在基板40的第1区域E的控制器芯片42之上的DAF 44的温度变得低于形成于基板40的第2区域F的焊料球41的温度。
因此,接合装置800与接合装置700同样地,与之前所说明的第1实施方式的接合装置100相比,DAF 44的温度变得更低,通过使用耐热温度低于接合装置100的DAF 44,可通过使焊料球41熔融并且使耐热温度低于焊料球41的熔融温度的DAF 44在不劣化的情况下热硬化,而将存储器芯片60封装于基板40、控制器芯片42之上。
作为在载物台50的表面50a形成凹部56的结构,可考虑到很多结构,当在基板40上封装有多个控制器芯片42的情况下,也可以如图17所示,使将基板40吸附固定于载物台50的表面时控制器芯片42所处的部分即相当于第1部分50b的部分为表面平坦的台座59,并在位于台座59的周围相当于第2部分50c的部分设置凹部56。
另外,本发明并不限定于以上所说明的实施方式,而应包含不脱离由权利要求所规定的本发明的技术范围或本质的所有变更及修正。
Claims (24)
1.一种接合装置,其特征在于包括:
加热器;以及
接合工具,具有对接合构件进行吸附的第1面及与所述第1面为相反侧的安装于所述加热器的第2面,所述第1面的第1周缘区域将所述接合构件的周缘部按压至第1构件,所述第1面的第1中央区域将所述接合构件的中央部按压至耐热温度低于所述第1构件的第2构件,
从所述接合工具的所述第1中央区域传递至所述接合构件的中央部的所述接合构件的单位面积的热量小于从所述接合工具的所述第1周缘区域传递至所述接合构件的周缘部的所述接合构件的单位面积的热量,
所述接合工具的所述第1中央区域具有流动冷却空气的冷却流路。
2.根据权利要求1所述的接合装置,其特征在于,
所述接合工具的所述第1中央区域与所述接合构件的接触面积小于所述接合工具的所述第1周缘区域与所述接合构件的接触面积。
3.根据权利要求1所述的接合装置,其特征在于,
所述接合工具的所述第1中央区域包括导热率低于所述接合工具的所述第1周缘区域的材料。
4.根据权利要求1至3中任一项所述的接合装置,其特征在于,
所述接合工具的所述第2面具有与所述第1中央区域相对应的第2中央区域及所述第2中央区域的外周侧的第2周缘区域,
从所述加热器的中央部传递至所述接合工具的所述第2中央区域的所述加热器的单位面积的热量小于从所述加热器的周缘部传递至所述接合工具的所述第2周缘区域的所述加热器的单位面积的热量。
5.根据权利要求4所述的接合装置,其特征在于,
所述接合工具的所述第2中央区域与所述加热器的接触面积小于所述接合工具的所述第2周缘区域与所述加热器的接触面积。
6.根据权利要求5所述的接合装置,其特征在于,
在所述接合工具的所述第2中央区域,呈格子状地配置有多个凹部。
7.根据权利要求4所述的接合装置,其特征在于,
所述接合工具的所述第2中央区域具有流动冷却空气的冷却流路。
8.根据权利要求5所述的接合装置,其特征在于,
所述接合工具的所述第2中央区域具有流动冷却空气的冷却流路。
9.根据权利要求4所述的接合装置,其特征在于,
所述接合工具的所述第2中央区域包括导热率低于所述接合工具的所述第2周缘区域的材料。
10.根据权利要求1所述的接合装置,其特征在于,
包括对基板进行吸附固定的载物台,
所述第2构件载置在接合于所述基板的电子零件之上,
所述第1构件形成于所述电子零件的周围的所述基板之上,
从接合有所述电子零件的所述基板的第1区域传递至与所述基板的所述第1区域相向的所述载物台的第1部分的所述基板的单位面积的热量大于从配置有所述第1构件的所述基板的第2区域传递至与所述基板的所述第2区域相向的所述载物台的第2部分的所述基板的单位面积的热量。
11.根据权利要求10所述的接合装置,其特征在于,
所述载物台中,
在所述第1部分设有流动冷却空气的冷却流路。
12.根据权利要求10所述的接合装置,其特征在于,
所述载物台中,
在所述第2部分的表面设有凹部。
13.根据权利要求4所述的接合装置,其特征在于,
包括对基板进行吸附固定的载物台,
所述第2构件载置在接合于所述基板的电子零件之上,
所述第1构件形成于所述电子零件的周围的所述基板之上,
从接合有所述电子零件的所述基板的第1区域传递至与所述基板的所述第1区域相向的所述载物台的第1部分的所述基板的单位面积的热量大于从配置有所述第1构件的所述基板的第2区域传递至与所述基板的所述第2区域相向的所述载物台的第2部分的所述基板的单位面积的热量。
14.根据权利要求13所述的接合装置,其特征在于,
所述载物台中,
在所述第1部分设有流动冷却空气的冷却流路。
15.根据权利要求13所述的接合装置,其特征在于,
所述载物台中,
在所述第2部分的表面设有凹部。
16.一种接合装置,其特征在于包括:
加热器;以及
接合工具,具有对接合构件进行吸附的第1面及与所述第1面为相反侧的安装于所述加热器的第2面,所述第1面具有第1周缘区域及第1中央区域,所述第1中央区域形成有凹部,所述第1面的所述第1周缘区域将所述接合构件的周缘部按压至第1构件,所述第1面的所述第1中央区域将所述接合构件的中央部按压至耐热温度低于所述第1构件的第2构件,
所述接合工具更具有真空孔,所述真空孔从所述第2面连通至所述凹部而吸附所述接合构件,并同时在所述凹部与所述接合构件之间形成真空隔热层的真空孔,
从所述接合工具的所述第1中央区域传递至所述接合构件的中央部的所述接合构件的单位面积的热量小于从所述接合工具的所述第1周缘区域传递至所述接合构件的周缘部的所述接合构件的单位面积的热量,
所述接合工具的所述第1中央区域具有流动冷却空气的冷却流路。
17.根据权利要求16所述的接合装置,其特征在于,
在所述接合工具的所述第1中央区域,呈格子状地配置有多个凹部。
18.根据权利要求17所述的接合装置,其特征在于,
所述接合工具的所述第2面具有与所述第1中央区域相对应的第2中央区域及所述第2中央区域的外周侧的第2周缘区域,
从所述加热器的中央部传递至所述接合工具的所述第2中央区域的所述加热器的单位面积的热量小于从所述加热器的周缘部传递至所述接合工具的所述第2周缘区域的所述加热器的单位面积的热量,
所述接合工具的所述第2中央区域与所述加热器的接触面积小于所述接合工具的所述第2周缘区域与所述加热器的接触面积。
19.根据权利要求18所述的接合装置,其特征在于,
在所述接合工具的所述第2中央区域,呈格子状地配置有多个凹部。
20.根据权利要求18所述的接合装置,其特征在于,
所述接合工具的所述第2中央区域具有流动冷却空气的冷却流路。
21.根据权利要求18所述的接合装置,其特征在于,
所述接合工具的所述第2中央区域包括导热率低于所述接合工具的所述第2周缘区域的材料。
22.根据权利要求17所述的接合装置,其特征在于,
包括对基板进行吸附固定的载物台,
所述第2构件载置在接合于所述基板的电子零件之上,
所述第1构件形成于所述电子零件的周围的所述基板之上,
从接合有所述电子零件的所述基板的第1区域传递至与所述基板的所述第1区域相向的所述载物台的第1部分的所述基板的单位面积的热量大于从配置有所述第1构件的所述基板的第2区域传递至与所述基板的所述第2区域相向的所述载物台的第2部分的所述基板的单位面积的热量。
23.根据权利要求22所述的接合装置,其特征在于,
所述载物台中,
在所述第1部分设有流动冷却空气的冷却流路。
24.根据权利要求22所述的接合装置,其特征在于,
所述载物台中,
在所述第2部分的表面设有凹部。
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JP2013098264A (ja) * | 2011-10-28 | 2013-05-20 | Sekisui Chem Co Ltd | フリップチップボンダー用アタッチメント |
CN104520980A (zh) * | 2012-07-20 | 2015-04-15 | 株式会社新川 | 接合装置用加热器及其冷却方法 |
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CN109196629A (zh) | 2019-01-11 |
US20210225799A1 (en) | 2021-07-22 |
SG11201811522QA (en) | 2019-01-30 |
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TW201739025A (zh) | 2017-11-01 |
JPWO2017164385A1 (ja) | 2019-03-22 |
JP6603401B2 (ja) | 2019-11-13 |
US11508688B2 (en) | 2022-11-22 |
WO2017164385A1 (ja) | 2017-09-28 |
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