CN105102555B - 熔合金属纳米结构网络和具有还原剂的熔合溶液 - Google Patents
熔合金属纳米结构网络和具有还原剂的熔合溶液 Download PDFInfo
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- CN105102555B CN105102555B CN201480018734.0A CN201480018734A CN105102555B CN 105102555 B CN105102555 B CN 105102555B CN 201480018734 A CN201480018734 A CN 201480018734A CN 105102555 B CN105102555 B CN 105102555B
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Classifications
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
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- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
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- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
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- G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material
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- H03K2217/94—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated
- H03K2217/96—Touch switches
- H03K2217/96031—Combination of touch switch and LC display
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/0104—Properties and characteristics in general
- H05K2201/0108—Transparent
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/026—Nanotubes or nanowires
-
- H—ELECTRICITY
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- H05K2203/107—Using laser light
-
- H—ELECTRICITY
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- H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
-
- H—ELECTRICITY
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- H05K2203/1157—Using means for chemical reduction
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/125—Inorganic compounds, e.g. silver salt
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12424—Mass of only fibers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12444—Embodying fibers interengaged or between layers [e.g., paper, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T442/00—Fabric [woven, knitted, or nonwoven textile or cloth, etc.]
- Y10T442/60—Nonwoven fabric [i.e., nonwoven strand or fiber material]
- Y10T442/654—Including a free metal or alloy constituent
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Abstract
Description
之前(欧姆/平方) | 之后(欧姆/平方) | 最终TT(%) | 浊度% | |
1 | >20,000 | 203 | 91.4 | 1.11 |
2 | >20,000 | 203 | 92.1 | 0.98 |
3 | >20,000 | 75 | >90.0 | 1.51 |
4 | >20,000 | 174 | >90.0 | 1.24 |
5 | >20,000 | 100 | >90.0 | 1.11 |
6 | >20,000 | 111 | 92.9 | 0.83 |
银来源 | 酸 | 欧姆/平方之前 | 欧姆/平方之后 | 最终TT | 最终浊度 |
AgF | HNO3 | >20,000 | 110 | 91.7 | 1.14 |
Ag-乙酸盐 | HNO3 | >20,000 | 150 | 91.5 | 1.33 |
Ag-TMS | HNO3 | >20,000 | 75 | 91.8 | 0.93 |
AgFHB | HNO3 | >20,000 | 90 | 91.5 | 0.96 |
AgHFA | HNO3 | >20,000 | 110 | 91.1 | 1.07 |
AgBF4 | HNO3 | >20,000 | 500 | 91.7 | 1.5 |
AgHClO4 | HClO4 | >20,000 | 200 | 92.5 | 11.4 |
银来源 | 酸 | 欧姆/平方之前 | 欧姆/平方之后 | 最终TT | 最终浊度 |
AgHFB | HNO3 | >20,000 | 103 | 92.4 | 0.88 |
AgHFB | HNO3 | >20,000 | 108 | 92.5 | 1.05 |
AgHFB | HNO3 | >20,000 | 50 | 92.1 | 1.24 |
AgTMS | HNO3 | >20,000 | 95 | 92.0 | 1.03 |
AgTMS | HNO3 | >20,000 | 100 | 92.2 | 0.91 |
AgTMS | HNO3 | >20,000 | 103 | 92.2 | 0.92 |
银来源 | 酸 | 欧姆/平方之前 | 欧姆/平方之后 | 最终TT | 最终浊度 |
AgF | HNO3 | >20,000 | <150 | 91.2 | 1.35 |
AgF | HNO3 | >20,000 | <150 | 91.7 | 1.16 |
AgF | HNO3 | >20,000 | <150 | 91.4 | 1.26 |
AgF | HNO3 | >20,000 | <150 | 91.5 | 1.37 |
AgNO3 | HNO3 | >20,000 | <100 | 92.5 | 1.00 |
AgNO3 | HNO3 | >20,000 | <100 | 92.5 | 1.02 |
AgNO3 | HNO3 | >20,000 | <100 | 92.5 | 0.88 |
AgNO3 | HNO3 | >20,000 | <100 | 92.5 | 0.99 |
钯来源 | 酸 | 欧姆/平方之前 | 欧姆/平方之后 | 最终TT |
K2PdCl4 | 无 | >20,000 | 1,130 | 86.8 |
K2PdCl4 | HNO3 | >20,000 | 880 | 85.9 |
Pd(NO3)2 | 无 | >20,000 | 235 | 90.2 |
Pd(NO3)2 | HNO3 | >20,000 | 140 | 91.1 |
烧结溶液 | 电阻(欧姆/平方) | TT% | |
Pd1 | 5×10-4Pd(NO3)2+1.6μl/ml HNO3 | 41 | 89.7 |
Pd2* | 5×10-4Pd(NO3)2+1.6μl/ml HNO3+AgF | 32 | 88.7 |
Pd3 | 5×10-5Pd(NO3)2+1.6μl/ml HNO3 | 117 | 90.6 |
Pd4* | 5×10-5Pd(NO3)2+1.6μl/ml HNO3+AgF | 33 | 90.3 |
Cu1 | 5×10-3Cu(NO3)2+1.6μl/ml HNO3 | 65 | 88.7 |
所用金属 | 烧结溶液 | 欧姆/平方 | TT% | 浊度 | |
Cu1a | 铜 | 5×10-4摩尔浓度Cu(NO3)2+1.6μl/ml HNO3 | 78 | 90.1 | 1.63 |
对照 | 银 | 0.1mg/ml AgNO3,1.6μl/ml HNO3 | 63 | 90.8 | 1.58 |
溶液编号 | 烧结溶液 | 欧姆/平方 | TT%/浊度 |
1 | 1.6μL/mL HNO3+0.1mg/ml AgNO3 | 110 | 91.1/1.24 |
2 | 1.6μL/mL HNO3+0.1mg/ml AgF | 145 | 91.7/1.07 |
3 | 0.16μL/mL HNO3+0.1mg/ml AgNO3 | 181 | >90.0 |
4 | 0.16μL/mL HNO3+0.1mg/ml AgF | 69 | 90.8/1.46 |
样品 | 异丁醇溶液 | 欧姆/平方 | TT% |
1 | 0.1mg/ml AgF,1.6μL/mL HNO3,0.17mg/ml安息香 | 62 | 90.7 |
2 | 0.5mg/ml AgF,8μL/mL HNO3,0.85mg/ml安息香 | 288 | >90.0 |
3 | 0.5mg/ml AgF,8μL/mL HNO3,0.17mg/ml安息香 | 144 | >90.0 |
4 | 0.5mg/ml AgF,8μL/mL HNO3,0.35mg/ml EPBP | 179 | >90.0 |
5 | 0.5mg/ml AgF,8μL/mL HNO3,0.20mg/ml AHNS | 457 | >90.0 |
6 | 0.5mg/ml AgF,8μL/mL HNO3,0.1mg/ml氨基苯酚 | 138 | 92.3 |
Claims (50)
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US13/777,802 US10020807B2 (en) | 2013-02-26 | 2013-02-26 | Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks |
US13/777,802 | 2013-02-26 | ||
PCT/US2014/017652 WO2014133890A2 (en) | 2013-02-26 | 2014-02-21 | Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks |
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