CN104798136A - 具有用于存储配置信息的保留扇区的存储器单元阵列 - Google Patents

具有用于存储配置信息的保留扇区的存储器单元阵列 Download PDF

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Publication number
CN104798136A
CN104798136A CN201380059868.2A CN201380059868A CN104798136A CN 104798136 A CN104798136 A CN 104798136A CN 201380059868 A CN201380059868 A CN 201380059868A CN 104798136 A CN104798136 A CN 104798136A
Authority
CN
China
Prior art keywords
cell array
word lines
volatile
memory device
configuration information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201380059868.2A
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English (en)
Chinese (zh)
Inventor
J·P·金
T·金
S·金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN104798136A publication Critical patent/CN104798136A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/20—Initialising; Data preset; Chip identification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/4402—Internal storage of test result, quality data, chip identification, repair information

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
CN201380059868.2A 2012-11-19 2013-11-19 具有用于存储配置信息的保留扇区的存储器单元阵列 Pending CN104798136A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/680,361 US8913450B2 (en) 2012-11-19 2012-11-19 Memory cell array with reserved sector for storing configuration information
US13/680,361 2012-11-19
PCT/US2013/070817 WO2014078864A2 (en) 2012-11-19 2013-11-19 Memory cell array with reserved sector for storing configuration information

Publications (1)

Publication Number Publication Date
CN104798136A true CN104798136A (zh) 2015-07-22

Family

ID=49759554

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380059868.2A Pending CN104798136A (zh) 2012-11-19 2013-11-19 具有用于存储配置信息的保留扇区的存储器单元阵列

Country Status (6)

Country Link
US (1) US8913450B2 (enExample)
EP (1) EP2920788A2 (enExample)
JP (1) JP2016512646A (enExample)
KR (1) KR20150087315A (enExample)
CN (1) CN104798136A (enExample)
WO (1) WO2014078864A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
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CN107506253A (zh) * 2017-08-11 2017-12-22 北京东土科技股份有限公司 一种操作系统异常信息保存方法及装置
CN110299159A (zh) * 2018-03-23 2019-10-01 美光科技公司 存储器装置、存储器装置的操作方法及存储器系统
CN112786100A (zh) * 2015-02-16 2021-05-11 德州仪器公司 铁电存储器中的数据保持损失筛选
CN115295053A (zh) * 2022-09-30 2022-11-04 芯天下技术股份有限公司 配置信息存储电路、易失性配置方法、装置及闪速存储器

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US9262259B2 (en) * 2013-01-14 2016-02-16 Qualcomm Incorporated One-time programmable integrated circuit security
US9799412B2 (en) * 2014-09-30 2017-10-24 Sony Semiconductor Solutions Corporation Memory having a plurality of memory cells and a plurality of word lines
US9401226B1 (en) * 2015-09-14 2016-07-26 Qualcomm Incorporated MRAM initialization devices and methods
US9911510B1 (en) * 2016-10-07 2018-03-06 Arm Limited Redundancy schemes for memory cell repair
US11327860B2 (en) * 2020-02-11 2022-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and methods for programming and reading memory device
KR20220094990A (ko) * 2020-12-29 2022-07-06 삼성전자주식회사 불량 워드라인의 리페어를 위한 메모리 장치, 메모리 컨트롤러 및 이를 포함하는 스토리지 장치

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US20070253254A1 (en) * 2006-04-26 2007-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
CN102135924A (zh) * 2003-06-02 2011-07-27 爱特梅尔公司 故障冗余数据存储电路

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US6462985B2 (en) * 1999-12-10 2002-10-08 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory for storing initially-setting data
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US6614703B2 (en) 2000-01-13 2003-09-02 Texas Instruments Incorporated Method and system for configuring integrated systems on a chip
JP2002150789A (ja) * 2000-11-09 2002-05-24 Hitachi Ltd 不揮発性半導体記憶装置
CN1717662B (zh) 2002-11-28 2010-04-28 株式会社瑞萨科技 存储器模块、存储器系统和信息仪器
JP4136646B2 (ja) * 2002-12-20 2008-08-20 スパンション エルエルシー 半導体記憶装置及びその制御方法
US7177977B2 (en) * 2004-03-19 2007-02-13 Sandisk Corporation Operating non-volatile memory without read disturb limitations
JP2005327337A (ja) * 2004-05-12 2005-11-24 Matsushita Electric Ind Co Ltd 半導体記憶装置
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KR100898673B1 (ko) * 2007-08-08 2009-05-22 주식회사 하이닉스반도체 플래시 메모리 소자 및 그 동작 방법
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CN102135924A (zh) * 2003-06-02 2011-07-27 爱特梅尔公司 故障冗余数据存储电路
US20070253254A1 (en) * 2006-04-26 2007-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112786100A (zh) * 2015-02-16 2021-05-11 德州仪器公司 铁电存储器中的数据保持损失筛选
CN107506253A (zh) * 2017-08-11 2017-12-22 北京东土科技股份有限公司 一种操作系统异常信息保存方法及装置
CN107506253B (zh) * 2017-08-11 2021-05-18 北京东土科技股份有限公司 一种操作系统异常信息保存方法及装置
CN110299159A (zh) * 2018-03-23 2019-10-01 美光科技公司 存储器装置、存储器装置的操作方法及存储器系统
CN115295053A (zh) * 2022-09-30 2022-11-04 芯天下技术股份有限公司 配置信息存储电路、易失性配置方法、装置及闪速存储器

Also Published As

Publication number Publication date
EP2920788A2 (en) 2015-09-23
JP2016512646A (ja) 2016-04-28
WO2014078864A3 (en) 2014-10-16
WO2014078864A2 (en) 2014-05-22
US20140140162A1 (en) 2014-05-22
US8913450B2 (en) 2014-12-16
KR20150087315A (ko) 2015-07-29

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Application publication date: 20150722

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