JP2016512646A - 構成情報を記憶するための予備セクタを有するメモリセルアレイ - Google Patents

構成情報を記憶するための予備セクタを有するメモリセルアレイ Download PDF

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Publication number
JP2016512646A
JP2016512646A JP2015543123A JP2015543123A JP2016512646A JP 2016512646 A JP2016512646 A JP 2016512646A JP 2015543123 A JP2015543123 A JP 2015543123A JP 2015543123 A JP2015543123 A JP 2015543123A JP 2016512646 A JP2016512646 A JP 2016512646A
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Japan
Prior art keywords
cell array
word line
failed
volatile
configuration information
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Ceased
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JP2015543123A
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English (en)
Japanese (ja)
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JP2016512646A5 (enExample
Inventor
ジュン・ピル・キム
テヒュン・キム
スンリュル・キム
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クアルコム，インコーポレイテッド
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Application filed by クアルコム，インコーポレイテッド filed Critical クアルコム，インコーポレイテッド
Publication of JP2016512646A publication Critical patent/JP2016512646A/ja
Publication of JP2016512646A5 publication Critical patent/JP2016512646A5/ja
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/20—Initialising; Data preset; Chip identification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/4402—Internal storage of test result, quality data, chip identification, repair information
JP2015543123A 2012-11-19 2013-11-19 構成情報を記憶するための予備セクタを有するメモリセルアレイ Ceased JP2016512646A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/680,361 US8913450B2 (en) 2012-11-19 2012-11-19 Memory cell array with reserved sector for storing configuration information
US13/680,361 2012-11-19
PCT/US2013/070817 WO2014078864A2 (en) 2012-11-19 2013-11-19 Memory cell array with reserved sector for storing configuration information

Publications (2)

Publication Number Publication Date
JP2016512646A true JP2016512646A (ja) 2016-04-28
JP2016512646A5 JP2016512646A5 (enExample) 2016-12-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015543123A Ceased JP2016512646A (ja) 2012-11-19 2013-11-19 構成情報を記憶するための予備セクタを有するメモリセルアレイ

Country Status (6)

Country Link
US (1) US8913450B2 (enExample)
EP (1) EP2920788A2 (enExample)
JP (1) JP2016512646A (enExample)
KR (1) KR20150087315A (enExample)
CN (1) CN104798136A (enExample)
WO (1) WO2014078864A2 (enExample)

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US9262259B2 (en) * 2013-01-14 2016-02-16 Qualcomm Incorporated One-time programmable integrated circuit security
US9799412B2 (en) * 2014-09-30 2017-10-24 Sony Semiconductor Solutions Corporation Memory having a plurality of memory cells and a plurality of word lines
US9842662B2 (en) * 2015-02-16 2017-12-12 Texas Instruments Incorporated Screening for data retention loss in ferroelectric memories
US9401226B1 (en) * 2015-09-14 2016-07-26 Qualcomm Incorporated MRAM initialization devices and methods
US9911510B1 (en) * 2016-10-07 2018-03-06 Arm Limited Redundancy schemes for memory cell repair
CN107506253B (zh) * 2017-08-11 2021-05-18 北京东土科技股份有限公司 一种操作系统异常信息保存方法及装置
US10643672B2 (en) * 2018-03-23 2020-05-05 Micron Technology, Inc. Memory with non-volatile configurations for efficient power management and operation of the same
US11327860B2 (en) * 2020-02-11 2022-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and methods for programming and reading memory device
KR20220094990A (ko) * 2020-12-29 2022-07-06 삼성전자주식회사 불량 워드라인의 리페어를 위한 메모리 장치, 메모리 컨트롤러 및 이를 포함하는 스토리지 장치
CN115295053B (zh) * 2022-09-30 2023-01-10 芯天下技术股份有限公司 配置信息存储电路、易失性配置方法、装置及闪速存储器

Citations (9)

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US20010003509A1 (en) * 1999-12-10 2001-06-14 Koji Hosono Non-volatile semiconductor memory
JP2001176290A (ja) * 1999-12-10 2001-06-29 Toshiba Corp 不揮発性半導体記憶装置
JP2002150789A (ja) * 2000-11-09 2002-05-24 Hitachi Ltd 不揮発性半導体記憶装置
JP2004206740A (ja) * 2002-12-20 2004-07-22 Fujitsu Ltd 半導体記憶装置及びその制御方法
JP2005327337A (ja) * 2004-05-12 2005-11-24 Matsushita Electric Ind Co Ltd 半導体記憶装置
US20090040826A1 (en) * 2007-08-08 2009-02-12 Hynix Semiconductor Inc. Flash memory device and method of operating the same
JP2010171210A (ja) * 2009-01-23 2010-08-05 Seiko Epson Corp 不揮発性記憶装置、集積回路装置及び電子機器
JP2010176746A (ja) * 2009-01-29 2010-08-12 Seiko Epson Corp 不揮発性記憶装置、集積回路装置及び電子機器
JP2010182389A (ja) * 2009-02-09 2010-08-19 Seiko Epson Corp 不揮発性記憶装置、集積回路装置及び電子機器

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JP3828222B2 (ja) * 1996-02-08 2006-10-04 株式会社日立製作所 半導体記憶装置
US6614703B2 (en) 2000-01-13 2003-09-02 Texas Instruments Incorporated Method and system for configuring integrated systems on a chip
CN1717662B (zh) 2002-11-28 2010-04-28 株式会社瑞萨科技 存储器模块、存储器系统和信息仪器
US7181650B2 (en) * 2003-06-02 2007-02-20 Atmel Corporation Fault tolerant data storage circuit
US7177977B2 (en) * 2004-03-19 2007-02-13 Sandisk Corporation Operating non-volatile memory without read disturb limitations
DE102004047813A1 (de) 2004-09-29 2006-03-30 Infineon Technologies Ag Halbleiterbaustein mit einer Umlenkschaltung
CN101091222A (zh) * 2004-10-26 2007-12-19 斯班逊有限公司 非易失性存储装置
JP5016841B2 (ja) 2006-04-26 2012-09-05 株式会社東芝 不揮発性半導体記憶装置
US7694196B2 (en) 2007-11-20 2010-04-06 Qimonda North America Corp. Self-diagnostic scheme for detecting errors
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US20090235040A1 (en) 2008-03-14 2009-09-17 Chilumula Ajaya K Programmble memory appratus, systems, and methods
US7768847B2 (en) 2008-04-09 2010-08-03 Rambus Inc. Programmable memory repair scheme
JP5337121B2 (ja) 2009-09-17 2013-11-06 株式会社東芝 不揮発性半導体記憶装置
KR101083681B1 (ko) 2010-07-02 2011-11-16 주식회사 하이닉스반도체 비휘발성 메모리 장치
US20120173921A1 (en) 2011-01-05 2012-07-05 Advanced Micro Devices, Inc. Redundancy memory storage system and a method for controlling a redundancy memory storage system

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010003509A1 (en) * 1999-12-10 2001-06-14 Koji Hosono Non-volatile semiconductor memory
JP2001176290A (ja) * 1999-12-10 2001-06-29 Toshiba Corp 不揮発性半導体記憶装置
JP2002150789A (ja) * 2000-11-09 2002-05-24 Hitachi Ltd 不揮発性半導体記憶装置
JP2004206740A (ja) * 2002-12-20 2004-07-22 Fujitsu Ltd 半導体記憶装置及びその制御方法
JP2005327337A (ja) * 2004-05-12 2005-11-24 Matsushita Electric Ind Co Ltd 半導体記憶装置
US20050265090A1 (en) * 2004-05-12 2005-12-01 Matsushita Electric Industrial Co., Ltd. Semiconductor storage device
US20090040826A1 (en) * 2007-08-08 2009-02-12 Hynix Semiconductor Inc. Flash memory device and method of operating the same
JP2009043389A (ja) * 2007-08-08 2009-02-26 Hynix Semiconductor Inc フラッシュメモリ素子及びその動作方法
JP2010171210A (ja) * 2009-01-23 2010-08-05 Seiko Epson Corp 不揮発性記憶装置、集積回路装置及び電子機器
JP2010176746A (ja) * 2009-01-29 2010-08-12 Seiko Epson Corp 不揮発性記憶装置、集積回路装置及び電子機器
JP2010182389A (ja) * 2009-02-09 2010-08-19 Seiko Epson Corp 不揮発性記憶装置、集積回路装置及び電子機器

Also Published As

Publication number Publication date
EP2920788A2 (en) 2015-09-23
CN104798136A (zh) 2015-07-22
WO2014078864A3 (en) 2014-10-16
WO2014078864A2 (en) 2014-05-22
US20140140162A1 (en) 2014-05-22
US8913450B2 (en) 2014-12-16
KR20150087315A (ko) 2015-07-29

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