CN1043278C - 腐蚀半导体片的方法和装置 - Google Patents

腐蚀半导体片的方法和装置 Download PDF

Info

Publication number
CN1043278C
CN1043278C CN94190776A CN94190776A CN1043278C CN 1043278 C CN1043278 C CN 1043278C CN 94190776 A CN94190776 A CN 94190776A CN 94190776 A CN94190776 A CN 94190776A CN 1043278 C CN1043278 C CN 1043278C
Authority
CN
China
Prior art keywords
semiconductor chip
roller
corrosive agent
semiconductor
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN94190776A
Other languages
English (en)
Chinese (zh)
Other versions
CN1115588A (zh
Inventor
亨利·F·埃尔克
罗兰德·R·范达姆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of CN1115588A publication Critical patent/CN1115588A/zh
Application granted granted Critical
Publication of CN1043278C publication Critical patent/CN1043278C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B44—DECORATIVE ARTS
    • B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22—Removing surface-material, e.g. by engraving, by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN94190776A 1993-10-08 1994-10-11 腐蚀半导体片的方法和装置 Expired - Fee Related CN1043278C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/133,980 1993-10-08
US08/133,980 US5340437A (en) 1993-10-08 1993-10-08 Process and apparatus for etching semiconductor wafers

Publications (2)

Publication Number Publication Date
CN1115588A CN1115588A (zh) 1996-01-24
CN1043278C true CN1043278C (zh) 1999-05-05

Family

ID=22461214

Family Applications (1)

Application Number Title Priority Date Filing Date
CN94190776A Expired - Fee Related CN1043278C (zh) 1993-10-08 1994-10-11 腐蚀半导体片的方法和装置

Country Status (10)

Country Link
US (1) US5340437A (cg-RX-API-DMAC7.html)
EP (1) EP0673545B1 (cg-RX-API-DMAC7.html)
JP (1) JP3081246B2 (cg-RX-API-DMAC7.html)
KR (1) KR0161794B1 (cg-RX-API-DMAC7.html)
CN (1) CN1043278C (cg-RX-API-DMAC7.html)
DE (1) DE69415298T2 (cg-RX-API-DMAC7.html)
MY (1) MY112147A (cg-RX-API-DMAC7.html)
SG (1) SG46423A1 (cg-RX-API-DMAC7.html)
TW (1) TW288167B (cg-RX-API-DMAC7.html)
WO (1) WO1995010850A1 (cg-RX-API-DMAC7.html)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6375741B2 (en) * 1991-03-06 2002-04-23 Timothy J. Reardon Semiconductor processing spray coating apparatus
JP3183123B2 (ja) * 1995-08-30 2001-07-03 信越半導体株式会社 エッチング装置
US5862560A (en) * 1996-08-29 1999-01-26 Ontrak Systems, Inc. Roller with treading and system including the same
US5843322A (en) * 1996-12-23 1998-12-01 Memc Electronic Materials, Inc. Process for etching N, P, N+ and P+ type slugs and wafers
JPH10223585A (ja) * 1997-02-04 1998-08-21 Canon Inc ウェハ処理装置及びその方法並びにｓｏｉウェハの製造方法
US6391067B2 (en) 1997-02-04 2002-05-21 Canon Kabushiki Kaisha Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus
GB9709659D0 (en) * 1997-05-13 1997-07-02 Surface Tech Sys Ltd Method and apparatus for etching a workpiece
DE19721493A1 (de) * 1997-05-22 1998-11-26 Wacker Siltronic Halbleitermat Verfahren zum Ätzen von Halbleiterscheiben
US6007406A (en) 1997-12-04 1999-12-28 Micron Technology, Inc. Polishing systems, methods of polishing substrates, and method of preparing liquids for semiconductor fabrication process
US5837662A (en) * 1997-12-12 1998-11-17 Memc Electronic Materials, Inc. Post-lapping cleaning process for silicon wafers
US6346505B1 (en) 1998-01-16 2002-02-12 Kurita Water Industries, Ltd. Cleaning solution for electromaterials and method for using same
JP3397117B2 (ja) * 1998-02-02 2003-04-14 栗田工業株式会社 電子材料用洗浄水及び洗浄方法
US5954888A (en) * 1998-02-09 1999-09-21 Speedfam Corporation Post-CMP wet-HF cleaning station
KR20010012688A (ko) 1998-03-20 2001-02-26 바르드와야 자이 마이크로 기계 장치를 제조하기 위한 장치 및 방법
CN1089033C (zh) * 1998-05-22 2002-08-14 中国科学院山西煤炭化学研究所 一种非晶态铜/二氧化硅催化剂及其制法和用途
US6716334B1 (en) 1998-06-10 2004-04-06 Novellus Systems, Inc Electroplating process chamber and method with pre-wetting and rinsing capability
US6099702A (en) 1998-06-10 2000-08-08 Novellus Systems, Inc. Electroplating chamber with rotatable wafer holder and pre-wetting and rinsing capability
KR100271769B1 (ko) * 1998-06-25 2001-02-01 윤종용 반도체소자의 제조방법, 이를 위한 반도체소자 제조용 식각액조성물 및 반도체소자
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6516816B1 (en) * 1999-04-08 2003-02-11 Applied Materials, Inc. Spin-rinse-dryer
CN1247833C (zh) * 1999-04-20 2006-03-29 直江津电子工业株式会社 硅外延晶片及其制造方法
US6600557B1 (en) 1999-05-21 2003-07-29 Memc Electronic Materials, Inc. Method for the detection of processing-induced defects in a silicon wafer
WO2000072368A1 (en) * 1999-05-21 2000-11-30 Memc Electronic Materials, Inc. Process for etching a silicon wafer
DE19927457C2 (de) * 1999-06-16 2002-06-13 Wacker Siltronic Halbleitermat Verwendung eines bekannten Verfahrens als Vorbehandlung zur Bestimmung der Diffusionslängen von Minoritätsträgern in einer Halbleiterscheibe
DE19927527B4 (de) * 1999-06-16 2007-02-08 Siltronic Ag Verfahren zur naßchemischen Behandlung einer Halbleiterscheibe
US6562726B1 (en) 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue
US6453914B2 (en) 1999-06-29 2002-09-24 Micron Technology, Inc. Acid blend for removing etch residue
US6376395B2 (en) 2000-01-11 2002-04-23 Memc Electronic Materials, Inc. Semiconductor wafer manufacturing process
EP1139396A3 (en) * 2000-03-31 2003-08-27 Texas Instruments Incorporated Fixture and method for uniform electroless metal deposition on integrated circuit bond pads
EP1313135A1 (en) * 2000-06-29 2003-05-21 Shin-Etsu Handotai Co., Ltd Method for processing semiconductor wafer and semiconductor wafer
DE10031603C2 (de) * 2000-06-29 2002-06-13 Wacker Siltronic Halbleitermat Verfahren zur Herstellung mindestens einer Halbleiterscheibe durch Ätzen
DE10064081C2 (de) * 2000-12-21 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
JP2002256460A (ja) * 2001-02-09 2002-09-11 Nippon Parkerizing Co Ltd アルミニウムおよびアルミニウム合金に用いるエッチングとデスマッティング用の組成物及びその方法
US20040194818A1 (en) * 2002-07-26 2004-10-07 Fronsdahl James W. Hydrophilic components for a spin-rinse-dryer
JP4509501B2 (ja) * 2003-07-31 2010-07-21 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 円板状部材のエッチング方法及び装置
US7415985B2 (en) * 2003-09-24 2008-08-26 Dainippon Screen Mfg. Co., Ltd. Substrate cleaning and drying apparatus
US6977215B2 (en) * 2003-10-28 2005-12-20 Nec Electronics America, Inc. Tungsten plug corrosion prevention method using gas sparged water
JP2005175106A (ja) * 2003-12-10 2005-06-30 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの加工方法
JP2005327856A (ja) * 2004-05-13 2005-11-24 Komatsu Electronic Metals Co Ltd 半導体ウェーハのエッチング装置
JP4482653B2 (ja) 2004-05-19 2010-06-16 独立行政法人産業技術総合研究所 接触分解ガソリンの水素化処理触媒
KR100644054B1 (ko) * 2004-12-29 2006-11-10 동부일렉트로닉스 주식회사 세정 장치 및 게이트 산화막의 전세정 방법
US7491650B2 (en) * 2005-07-27 2009-02-17 Micron Technology, Inc. Etch compositions and methods of processing a substrate
TWI262827B (en) * 2005-12-13 2006-10-01 Ind Tech Res Inst Cleaning device and method of bubble reaction
JP4869957B2 (ja) 2006-03-22 2012-02-08 大日本スクリーン製造株式会社 基板処理装置
CN101400823A (zh) * 2006-03-31 2009-04-01 荏原优莱特科技股份有限公司 塑料用的表面改性液及利用它的塑料表面的金属化方法
DE102007054484B3 (de) * 2007-11-15 2009-03-12 Deutsche Cell Gmbh Strukturier-Verfahren
US8192822B2 (en) * 2008-03-31 2012-06-05 Memc Electronic Materials, Inc. Edge etched silicon wafers
JP2012509599A (ja) * 2008-11-19 2012-04-19 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 半導体ウェーハのエッジを剥離する方法及びシステム
DE112012005803T5 (de) 2012-02-01 2014-10-16 Mitsubishi Electric Corporation Herstellungsverfahren für Photovoltaikvorrichtung und Herstellungsvorrichtung für Photovoltaikvorrichtung
US8877075B2 (en) * 2012-02-01 2014-11-04 Infineon Technologies Ag Apparatuses and methods for gas mixed liquid polishing, etching, and cleaning
JPWO2013114589A1 (ja) * 2012-02-01 2015-05-11 三菱電機株式会社 光起電力装置の製造方法および光起電力装置の製造装置
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers
DE112012006759T5 (de) * 2012-07-31 2015-08-20 Sanyo Electric Co., Ltd. Verfahren der Herstellung einer Solarzelle
SG11201507155TA (en) * 2013-03-15 2015-10-29 Applied Materials Inc Substrate position aligner
MX2016001066A (es) 2013-08-29 2016-08-03 Halliburton Energy Services Inc Metodos y sistemas para generar especies de fluoruro reactivas a partir de un precursor gaseoso en una formacion subterranea para su estimulacion.
US9562291B2 (en) 2014-01-14 2017-02-07 Mei, Llc Metal etch system
JP2015213189A (ja) * 2015-07-09 2015-11-26 三菱電機株式会社 光起電力装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251317A (en) * 1979-04-30 1981-02-17 Fairchild Camera And Instrument Corporation Method of preventing etch masking during wafer etching

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3483049A (en) * 1965-12-20 1969-12-09 Teletype Corp Method of froth etching
US3880409A (en) * 1973-04-18 1975-04-29 In Line Technology Inc Solution agitation apparatus
US3964957A (en) * 1973-12-19 1976-06-22 Monsanto Company Apparatus for processing semiconductor wafers
JPS58164786A (ja) * 1982-03-25 1983-09-29 Fujitsu Ltd 電極の形成方法
US4426225A (en) * 1982-09-29 1984-01-17 Storage Technology Corporation Gold recovery method
JPS59110782A (ja) * 1982-12-16 1984-06-26 Toshiba Corp エツチング装置
JPS61220434A (ja) * 1985-03-27 1986-09-30 Toshiba Corp ウエハ洗浄装置
JPS6386525A (ja) * 1986-09-30 1988-04-16 Kyushu Denshi Kinzoku Kk 半導体シリコンウエ−ハのエツチング装置
GB2207890B (en) * 1987-08-14 1991-05-01 Stc Plc Etching apparatus
DE3728693A1 (de) * 1987-08-27 1989-03-09 Wacker Chemitronic Verfahren und vorrichtung zum aetzen von halbleiteroberflaechen
US4900395A (en) * 1989-04-07 1990-02-13 Fsi International, Inc. HF gas etching of wafers in an acid processor
US5000795A (en) * 1989-06-16 1991-03-19 At&T Bell Laboratories Semiconductor wafer cleaning method and apparatus
JPH0785471B2 (ja) * 1990-10-16 1995-09-13 信越半導体株式会社 エッチング装置
JPH04186834A (ja) * 1990-11-21 1992-07-03 Yamaha Corp 半導体薄膜のエッチング方法
DE4103084A1 (de) * 1991-02-01 1992-08-13 Wacker Chemitronic Magazin zur halterung von scheibenfoermigen werkstuecken, insbesondere halbleiterscheiben, bei der nasschemischen oberflaechenbehandlung in fluessigkeitsbaedern
US5246528A (en) * 1991-05-31 1993-09-21 Shin-Etsu Handotai Co., Ltd. Automatic wafer etching method and apparatus
JPH05267274A (ja) * 1992-03-23 1993-10-15 Matsushita Electron Corp ウエットエッチング処理槽

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251317A (en) * 1979-04-30 1981-02-17 Fairchild Camera And Instrument Corporation Method of preventing etch masking during wafer etching

Also Published As

Publication number Publication date
KR0161794B1 (ko) 1999-02-01
DE69415298D1 (de) 1999-01-28
CN1115588A (zh) 1996-01-24
EP0673545A4 (en) 1996-05-29
WO1995010850A1 (en) 1995-04-20
EP0673545B1 (en) 1998-12-16
US5340437A (en) 1994-08-23
DE69415298T2 (de) 1999-05-06
JPH08502148A (ja) 1996-03-05
TW288167B (cg-RX-API-DMAC7.html) 1996-10-11
MY112147A (en) 2001-04-30
JP3081246B2 (ja) 2000-08-28
SG46423A1 (en) 1998-02-20
EP0673545A1 (en) 1995-09-27
KR950704809A (ko) 1995-11-20

Similar Documents

Publication Publication Date Title
CN1043278C (zh) 腐蚀半导体片的方法和装置
US6709981B2 (en) Method and apparatus for processing a semiconductor wafer using novel final polishing method
EP2260507B1 (en) Methods for etching the edge of a silicon wafer, silicon wafer, etching apparatus
US5679212A (en) Method for production of silicon wafer and apparatus therefor
JP2000235941A (ja) 半導体ウェハ、半導体ウェハの製造方法および該製造方法の使用
US5839460A (en) Apparatus for cleaning semiconductor wafers
US20040216841A1 (en) Substrate processing apparatus
US5816274A (en) Apparartus for cleaning semiconductor wafers
US20090042390A1 (en) Etchant for silicon wafer surface shape control and method for manufacturing silicon wafers using the same
EP0750967A2 (en) Method for preshaping a semiconductor substrate for polishing and structure
JP2004343126A (ja) 半導体ウェハの前面および裏面を同時にポリッシングする方法
US6514423B1 (en) Method for wafer processing
EP1058296A2 (en) A roller for rotating a substrate
JPH05243208A (ja) シリコンウェーハの面取エッチング方法
JPS6036676A (ja) 板状物処理装置
JPH0382778A (ja) エッチング装置
JP6455319B2 (ja) 半導体ウェーハのエッチング装置及び半導体ウェーハのエッチング方法
JPH069512Y2 (ja) 水中カセットへのウエハ−収納装置
JPH01201490A (ja) 半導体基板用ウェーハのエッチング方法
JPH05270998A (ja) ウェハ外周部のエッチング方法およびウェハ貼合わせ装置
JPH0364917A (ja) 半導体ウェーハの製造方法
JPH11297665A (ja) ウエハ端面処理装置
JPH07283196A (ja) 半導体ウェハの表面処理方法
KR20120051895A (ko) 웨이퍼 세정장치 및 웨이퍼 세정방법
JP2001240429A (ja) ガラス製品表面のフロスト処理方法及び石英ガラスチューブ

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee