TW288167B - - Google Patents

Info

Publication number
TW288167B
TW288167B TW084100103A TW84100103A TW288167B TW 288167 B TW288167 B TW 288167B TW 084100103 A TW084100103 A TW 084100103A TW 84100103 A TW84100103 A TW 84100103A TW 288167 B TW288167 B TW 288167B
Authority
TW
Taiwan
Application number
TW084100103A
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Application granted granted Critical
Publication of TW288167B publication Critical patent/TW288167B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B44—DECORATIVE ARTS
    • B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22—Removing surface-material, e.g. by engraving, by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
TW084100103A 1993-10-08 1995-01-05 TW288167B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/133,980 US5340437A (en) 1993-10-08 1993-10-08 Process and apparatus for etching semiconductor wafers

Publications (1)

Publication Number Publication Date
TW288167B true TW288167B (zh) 1996-10-11

Family

ID=22461214

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084100103A TW288167B (zh) 1993-10-08 1995-01-05

Country Status (10)

Country Link
US (1) US5340437A (zh)
EP (1) EP0673545B1 (zh)
JP (1) JP3081246B2 (zh)
KR (1) KR0161794B1 (zh)
CN (1) CN1043278C (zh)
DE (1) DE69415298T2 (zh)
MY (1) MY112147A (zh)
SG (1) SG46423A1 (zh)
TW (1) TW288167B (zh)
WO (1) WO1995010850A1 (zh)

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JP3183123B2 (ja) * 1995-08-30 2001-07-03 信越半導体株式会社 エッチング装置
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US5843322A (en) * 1996-12-23 1998-12-01 Memc Electronic Materials, Inc. Process for etching N, P, N+ and P+ type slugs and wafers
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US6391067B2 (en) 1997-02-04 2002-05-21 Canon Kabushiki Kaisha Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus
GB9709659D0 (en) * 1997-05-13 1997-07-02 Surface Tech Sys Ltd Method and apparatus for etching a workpiece
DE19721493A1 (de) * 1997-05-22 1998-11-26 Wacker Siltronic Halbleitermat Verfahren zum Ätzen von Halbleiterscheiben
US6007406A (en) 1997-12-04 1999-12-28 Micron Technology, Inc. Polishing systems, methods of polishing substrates, and method of preparing liquids for semiconductor fabrication process
US5837662A (en) * 1997-12-12 1998-11-17 Memc Electronic Materials, Inc. Post-lapping cleaning process for silicon wafers
JP3397117B2 (ja) * 1998-02-02 2003-04-14 栗田工業株式会社 電子材料用洗浄水及び洗浄方法
US6346505B1 (en) * 1998-01-16 2002-02-12 Kurita Water Industries, Ltd. Cleaning solution for electromaterials and method for using same
US5954888A (en) * 1998-02-09 1999-09-21 Speedfam Corporation Post-CMP wet-HF cleaning station
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CN1089033C (zh) * 1998-05-22 2002-08-14 中国科学院山西煤炭化学研究所 一种非晶态铜/二氧化硅催化剂及其制法和用途
US6099702A (en) 1998-06-10 2000-08-08 Novellus Systems, Inc. Electroplating chamber with rotatable wafer holder and pre-wetting and rinsing capability
US6716334B1 (en) 1998-06-10 2004-04-06 Novellus Systems, Inc Electroplating process chamber and method with pre-wetting and rinsing capability
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DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6516816B1 (en) * 1999-04-08 2003-02-11 Applied Materials, Inc. Spin-rinse-dryer
KR100701825B1 (ko) * 1999-04-20 2007-03-30 신에쯔 한도타이 가부시키가이샤 실리콘 에피택셜 웨이퍼 및 그 제조방법
US6600557B1 (en) 1999-05-21 2003-07-29 Memc Electronic Materials, Inc. Method for the detection of processing-induced defects in a silicon wafer
WO2000072368A1 (en) * 1999-05-21 2000-11-30 Memc Electronic Materials, Inc. Process for etching a silicon wafer
DE19927527B4 (de) 1999-06-16 2007-02-08 Siltronic Ag Verfahren zur naßchemischen Behandlung einer Halbleiterscheibe
DE19927457C2 (de) * 1999-06-16 2002-06-13 Wacker Siltronic Halbleitermat Verwendung eines bekannten Verfahrens als Vorbehandlung zur Bestimmung der Diffusionslängen von Minoritätsträgern in einer Halbleiterscheibe
US6562726B1 (en) 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue
US6453914B2 (en) 1999-06-29 2002-09-24 Micron Technology, Inc. Acid blend for removing etch residue
US6376395B2 (en) 2000-01-11 2002-04-23 Memc Electronic Materials, Inc. Semiconductor wafer manufacturing process
EP1139396A3 (en) * 2000-03-31 2003-08-27 Texas Instruments Incorporated Fixture and method for uniform electroless metal deposition on integrated circuit bond pads
US7332437B2 (en) * 2000-06-29 2008-02-19 Shin-Etsu Handotai Co., Ltd. Method for processing semiconductor wafer and semiconductor wafer
DE10031603C2 (de) * 2000-06-29 2002-06-13 Wacker Siltronic Halbleitermat Verfahren zur Herstellung mindestens einer Halbleiterscheibe durch Ätzen
DE10064081C2 (de) * 2000-12-21 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
JP2002256460A (ja) * 2001-02-09 2002-09-11 Nippon Parkerizing Co Ltd アルミニウムおよびアルミニウム合金に用いるエッチングとデスマッティング用の組成物及びその方法
CN1565045A (zh) * 2002-07-26 2005-01-12 应用材料公司 旋转－清洗－干燥器用的亲水部件
JP4509501B2 (ja) * 2003-07-31 2010-07-21 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 円板状部材のエッチング方法及び装置
US7415985B2 (en) * 2003-09-24 2008-08-26 Dainippon Screen Mfg. Co., Ltd. Substrate cleaning and drying apparatus
US6977215B2 (en) * 2003-10-28 2005-12-20 Nec Electronics America, Inc. Tungsten plug corrosion prevention method using gas sparged water
JP2005175106A (ja) * 2003-12-10 2005-06-30 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの加工方法
JP2005327856A (ja) * 2004-05-13 2005-11-24 Komatsu Electronic Metals Co Ltd 半導体ウェーハのエッチング装置
JP4482653B2 (ja) 2004-05-19 2010-06-16 独立行政法人産業技術総合研究所 接触分解ガソリンの水素化処理触媒
KR100644054B1 (ko) * 2004-12-29 2006-11-10 동부일렉트로닉스 주식회사 세정 장치 및 게이트 산화막의 전세정 방법
US7491650B2 (en) * 2005-07-27 2009-02-17 Micron Technology, Inc. Etch compositions and methods of processing a substrate
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JP4869957B2 (ja) 2006-03-22 2012-02-08 大日本スクリーン製造株式会社 基板処理装置
JP4786708B2 (ja) * 2006-03-31 2011-10-05 荏原ユージライト株式会社 プラスチック用の表面改質液およびそれを利用したプラスチック表面の金属化方法
DE102007054484B3 (de) * 2007-11-15 2009-03-12 Deutsche Cell Gmbh Strukturier-Verfahren
EP2260507B1 (en) * 2008-03-31 2012-09-26 MEMC Electronic Materials, Inc. Methods for etching the edge of a silicon wafer, silicon wafer, etching apparatus
WO2010059556A1 (en) * 2008-11-19 2010-05-27 Memc Electronic Materials, Inc. Method and system for stripping the edge of a semiconductor wafer
US8877075B2 (en) 2012-02-01 2014-11-04 Infineon Technologies Ag Apparatuses and methods for gas mixed liquid polishing, etching, and cleaning
US9246043B2 (en) 2012-02-01 2016-01-26 Mitsubishi Electric Corporation Manufacturing method of photovoltaic device and manufacturing apparatus for photovoltaic device
JPWO2013114589A1 (ja) * 2012-02-01 2015-05-11 三菱電機株式会社 光起電力装置の製造方法および光起電力装置の製造装置
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers
JP6016174B2 (ja) * 2012-07-31 2016-10-26 パナソニックＩｐマネジメント株式会社 太陽電池の製造方法
EP2973677B1 (en) * 2013-03-15 2022-10-05 Applied Materials, Inc. Substrate position aligner
BR112016001680A2 (pt) 2013-08-29 2017-09-19 Halliburton Energy Services Inc Métodos e sistemas para a geração de espécies reativas de fluoreto a partir de um precursor gasoso em uma formação subterrânea para a estimulação do mesmo
US9562291B2 (en) 2014-01-14 2017-02-07 Mei, Llc Metal etch system
JP2015213189A (ja) * 2015-07-09 2015-11-26 三菱電機株式会社 光起電力装置の製造方法

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Also Published As

Publication number Publication date
WO1995010850A1 (en) 1995-04-20
EP0673545A4 (en) 1996-05-29
KR0161794B1 (ko) 1999-02-01
US5340437A (en) 1994-08-23
EP0673545A1 (en) 1995-09-27
DE69415298T2 (de) 1999-05-06
JP3081246B2 (ja) 2000-08-28
CN1115588A (zh) 1996-01-24
KR950704809A (ko) 1995-11-20
MY112147A (en) 2001-04-30
EP0673545B1 (en) 1998-12-16
SG46423A1 (en) 1998-02-20
CN1043278C (zh) 1999-05-05
JPH08502148A (ja) 1996-03-05
DE69415298D1 (de) 1999-01-28

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