CN104024146A - 具有碳系导体和量子点的光电平台以及包含此种平台的晶体管 - Google Patents

具有碳系导体和量子点的光电平台以及包含此种平台的晶体管 Download PDF

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CN104024146A
CN104024146A CN201280044149.9A CN201280044149A CN104024146A CN 104024146 A CN104024146 A CN 104024146A CN 201280044149 A CN201280044149 A CN 201280044149A CN 104024146 A CN104024146 A CN 104024146A
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耶拉西莫斯·康斯坦塔托斯
弗兰克·科彭斯
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Institut de Ciencies Fotoniques ICFO
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Abstract

本发明包含一种光电平台，其具有碳系导电层(2)和在该碳系导电层顶部作为光吸收材料的胶体量子点层(1)。所述碳系导电层可由石墨烯、被还原的氧化石墨烯或碳纳米管制成。其维持低工作电压的同时，能够获得约106的光电导增益。该平台可以用作晶体管。

Description

具有碳系导体和量子点的光电平台以及包含此种平台的晶体管
技术领域
本发明涉及光电平台。特别地，本发明涉及一种改善了光电导增益的平台。
背景技术
光电二极管(InGaAs适合于短波红外应用且Si适合于可见和近红外应用)展示出较高的灵敏度。但是，它们受到读出噪音的限制且它们的量子效率受限于统一性(即，每个吸收的光子对应1个载流子)。鉴于在光电二极管中缺乏光电导增益，已经开发出APD(雪崩光电二极管)以通过载流子倍增效应来提供增益。这些器件中的增益为每个吸收的光子对应大约100～1000个载流子。将这些结构整合至常见的图像传感器和低成本的探测器的技术挑战是所需的高工作偏压(大约100V)以及为抑制漏泄电流和防护由高外加偏压所带来的降解而延长器件寿命所需的附加层。此外，由于APD所需的不同生长过程，这些器件不能单片地整合到CMOS电子设备中。
发明内容
本发明通过提供一种光电平台而克服了现有技术中的问题，该光电平台包含碳系导电层和在该碳系导电层上面的用于吸收光的胶体量子点层。该平台有利地具有基片和介于该基片与所述碳系层间的氧化物中间层。所述碳系层优选是由石墨烯、被还原的氧化石墨烯或碳纳米管制成的。所述基片可以是氮化硼或GaAs中的一种，且所述氧化物中间层为SiO2、LiF、氧化铝和二氧化铪中的一种或它们的混合物。所述量子点可以是下列材料的一种或多种：CdSe、CdS、PbSe、ZnO、ZnS、CZTS、Cu2S、Bi2S3、Ag2S、HgTe、CdHgTe、InAs、InSb。所述碳系层可以成形为矩形、纳米收缩(nanoconstriction)、霍尔-棒(hall-bar)或带的形式。本发明还包含具有源电极和漏电极以及此种平台的晶体管，以及包含与所述量子点层相接触的任选的上电极。
附图说明
为了完成描述并且为了更好地理解本发明，提供了一组附图。所述附图图解了本发明的优选实施方式，其不应当被解释为限制本发明的范围，而仅仅是作为展示本发明如何实施的例子。所述附图包含下列图：
图1：示出了本发明的第一实施方式。
图2：示出了空穴如何从量子点层转移至碳系层并且由此形成耗尽层。
图3：本发明的工作原理的图解。
图4：在石墨烯通道的光电导增益图表。
图5：示出了本发明的器件的光谱响应。
具体实施方式
本发明是一种可与CMOS集成兼容的混合光电平台，其由经胶体量子点(CQD)致敏的碳系层(例如石墨烯)构成。所述碳系层被用作载流子输运通道，且CQD被用作吸收材料。如图1所示，当应用于光电晶体管时，将石墨烯层(2)沉积在硅基片(4)上，以SiO2中间层(3)形成光电晶体管的栅极，并且将两个电极连接至所述石墨烯的横向维度(Vs,Vd)上以形成器件的金属接触，所述金属接触类似于FET晶体管的源极和漏极电极。然后使用一层CQD(1)覆盖所述石墨烯，该CQD层的带隙可以根据该QD的尺寸和材料来调节(CdSe:400–650nm，PbS:650–2000nm，HgTe:1500nm–4000nm)。
为了说明底层机制，我们专注于PbS QD的情形，但是这通常可以适用于其它QD材料。由于PbS QD的掺杂，在QD层与石墨烯的界面处形成有内置场。如图2所示，来自PbS QD的空穴转移至石墨烯并且在PbS膜和内置膜中形成耗尽层。入射光子在量子点中产生电子空穴对。由于QD至石墨烯层的能带对齐，单一类型的载流子然后转移至石墨烯层并且在从源极到漏极的外加电场的协助下通过石墨烯输送到金属接触。空穴保持截留于PbS层中，延长其载流子的寿命。当石墨烯层中的光生电子到达漏极接触时，由源极重新注入另一个电子以提供电荷保存(图3)。因此，对于单个吸收的光子，电载流子在复合之前在器件中进行再循环。在石墨烯-QD层处形成的异质结抑制了复合，并因此由载流子的寿命与电子在石墨烯通道中的渡越时间的比值规定了截流子的数目。由于由石墨烯通道所提供的非常高的载流子迁移率，在本发明中观察到了大约106的光电导增益(图4)。鉴于石墨烯的高迁移率，该器件在源极-漏极中需要非常低的外加电场，从几μV至几伏，并且所述增益可以以外加电压进行线性调整。这种现象(也称为“光门控效应(photogating effect)”)等效于在石墨烯层上具有顶栅极，在此处，入射光被用来在QD层中产生载流子，其发挥了光控制门的作用。
所提议器件可以以所述栅极开路而作为2-端器件进行操作或者通过控制栅极的电势并由此控制石墨烯通道的导电性而作为光电晶体管进行操作。通过向栅极施加电势以关断石墨烯层的暗电导率(在石墨烯具有带隙的情况下)，可以将来自其中的暗电流最小化。可以在CQD层的顶部放置附加栅极，以控制CQD层中的电场。可以采用此栅极来完全耗尽一厚层QCD膜，该一厚层QCD膜被用来完全地吸收入射光。可以扩展所述附加栅极的应用以复位器件和控制时间响应：所述栅极的高反向偏压信号脉冲Vg2可以切换电场的方向并且将截留于QD层中的光生空穴驱动至石墨烯中或将光生电子从石墨烯驱动至QD层中以诱导复合。
所述器件的光谱响应如图5所示。石墨烯的光谱灵敏度是通过QD重迭层中的光子吸收来确定的并且可以通过致敏材料的适当选择来调节。
该器件可以通过由溶液旋铸或喷铸一层QD来制造。使量子点经历配体交换过程以从表面去除油酸并且与二齿配体进行置换，所述二齿配体交联所述量子点并且使得它们成为导电固体。此类配体可以是：乙二硫醇、乙二胺、肼、乙硫醇、丙硫醇、甲酸、草酸、乙酸或无机结构部分(inorganic moities)(例如SnS4、PbBr2、PbI2、PbCl2)。还可以采用二齿配体分子来将QD电子耦合至石墨烯层。此类二齿配体包括：乙二硫醇、乙二胺、苯二硫酚、肼。可以将QD层的总厚度从几nm调节至几百nm，从而完全地吸收入射光。
所述碳系层可以是一层碳纳米管(CNT)或图案化的石墨烯或经还原的氧化石墨烯。可以通过cvd来生长CNT并转移至基片上。通过cbd来生长单层或多层的石墨烯、溶液处理并且再转移到基片上，或者将石墨烯剥离后再转移到基片上。可以通过各种各样的技术来图案化碳系导体，例如化学或等离子体蚀刻，或者通过热活化的纳米粒子、离子束、扫描探针光刻或一层接一层的去除。制造石墨烯纳米带的一种替代方法是拉链开纳米管。
QD可以是(但不限于)：CdSe、CdS、PbSe、ZnO、ZnS、CZTS、Cu2S、Bi2S3、Ag2S、HgTe、CdHgTe、InAs、InSb等等。
QD半导体材料可以是p型、n-型或本征的。光敏半导体材料可以是共轭聚合物或染料，可以通过旋涂、喷铸、滴铸或蒸发来沉积到石墨烯上。
所述碳系导体可以图案化为任何特定的几何形状，例如矩形、纳米收缩、霍尔-棒或带(只有几nm宽的带)。当所述碳系层由石墨烯组成时，那么其可以由单层或多层石墨烯制成。可以对石墨烯层(单层或多层)进行修改以在碳系层中开启一个带隙。这能够减小器件的暗电流并且电切断晶体管通道。用以减小器件的暗电流和允许单光子探测的进一步修改包括形成碳系通道的纳米收缩，其可以供给库仑阻塞现象，这种库仑阻塞现象可以减小暗电流并允许单光子探测。
基片层可以是Si、氮化棚、GaAs等，并且所述介电中间层可以是任何氧化物，如SiO2、LiF、氧化铝、二氧化铪等。
本发明可以应用于数码相机、遥感、夜视和单光子探测等用的成像传感器中，可以应用于低功率级传输及检测用的光通信中以及可以应用于超低功耗检测用的光学仪器中，等等。
在本文中，术语“包含(comprise)”及其派生(如“包含(comprising)”等)不应当在排除意义上进行理解，即，这些术语不应当被解释为排除“所描述和定义的可以包括进一步元素”的可能性。
另一方面，本发明显然地不局限于本文中所描述的具体实施方式，本发明还涵盖处于权利要求定义的本发明的一般范围内的、本领域技术人员可以考虑到的(例如，关于材料、尺寸、部件、配置等的选择)任何变更。

Claims (8)

1.一种光电平台，其包含碳系导电层(2)和在该碳系层(2)的顶部的用于吸收光的胶体量子点层，其特征在于所述碳系层是由石墨烯、被还原的氧化石墨烯或碳纳米管制成的。
2.根据权利要求1所述的光电平台，其进一步包含基片(4)和介于该基片与所述碳系层之间的介电中间层(3)。
3.根据权利要求1～2任一项所述的光电平台，其中所述基片是Si、氮化棚或GaAs中的一种，并且所述介电中间层是SiO2、LiF、氧化铝和二氧化铪中的一种或它们的混合物。
4.根据前述权利要求任一项所述的光电平台，其中所述量子点是下列材料的中一种或多种：CdSe、CdS、PbSe、ZnO、ZnS、CZTS、Cu2S、Bi2S3、Ag2S、HgTe、CdHgTe、InAs、InSb。
5.根据前述权利要求任一项所述的光电平台，其中所述碳系层成形为矩形、纳米收缩、霍尔-棒或带的形式。
6.根据前述权利要求任一项所述的光电平台，其中所述吸收层进一步包含共轭聚合物或染料。
7.一种晶体管，其包含源极和漏极电极(Vs,Vd)以及前述权利要求任一项所述的平台。
8.根据权利要求7所述的晶体管，其进一步包含与所述量子点层接触的上电极。
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