SE540220C2 - A Graphene Optoelectronic Sensor - Google Patents
A Graphene Optoelectronic SensorInfo
- Publication number
- SE540220C2 SE540220C2 SE1750011A SE1750011A SE540220C2 SE 540220 C2 SE540220 C2 SE 540220C2 SE 1750011 A SE1750011 A SE 1750011A SE 1750011 A SE1750011 A SE 1750011A SE 540220 C2 SE540220 C2 SE 540220C2
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- Prior art keywords
- graphene
- optoelectronic sensor
- layer
- resonator cavity
- optical resonator
- Prior art date
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 84
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 49
- 230000003287 optical effect Effects 0.000 claims abstract description 58
- 238000000149 argon plasma sintering Methods 0.000 claims abstract description 38
- 230000002745 absorbent Effects 0.000 claims abstract description 23
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- 238000004519 manufacturing process Methods 0.000 claims description 9
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
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- 229910052799 carbon Inorganic materials 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention relates to a graphene optoelectronic sensor (1) including one or more optical resonators (2) for detecting discrete light wavelength bands. The graphene optoelectronic sensor is especially characterized in:- that a graphene light absorbent layer (3) is directly applied on a first face of an optical resonator cavity layer (5), said optical resonator cavity layer (5) consisting of a material having a refractive index at or above 2, and- that a wavelength-selective light scattering unit (6) is located on or adjacent to an opposite second face (7) of each optical resonator cavity layer (5).
Description
A Graphene Optoelectronic Sensor TECHNICAL FIELD The invention relates to a graphene optoelectronic sensor including one or more optical resonators for detecting discrete light wavelength bands primarily within the infrared wavelength bands. The invention involves the novel use of a graphene layer as a light absorbent.
BACKGROUND In a large range of applications, imaging has become a popular method for obtaining data. Certain applications require an extraordinary quality to be able to correctly identify and distinguish individual objects in an image. To this end, much effort has been made in the use of graphene in optoelectronic sensors. Graphene with its single layer of honeycomb carbon lattice and single-pass light absorption at or below 2.5% has proven potentially very useable in the field of optoelectronics.
Currently known studies and attempts at obtaining a useable photo sensor involving graphene include the use of graphene as a resonator in itself. An example of this is described in W015083073A1 which discloses a graphene sheet as a resonator layer supported at two points. The sensor includes a detection circuit responsive to piezo-resistive changes in the resonator graphene sheet. A problem with the use of graphene as a resonator in itself is however the low single-pass light absorption at or below 2.5% of graphene, which results in a photo sensor with relatively low internal quantum efficiency. Experiments have been made to improve the internal quantum efficiency by adding dots of various metals on the graphene 2D honeycomb lattice, but with only limited improvements.
Another example of graphene used in a photo sensor is described in US 2015/0357504 A1. Here, a graphene based transistor-type sensor is used as the active sensor device. A delicate structure of multiple very thin nanoribbons of graphene is grown on a substrate layer. The frequency sensitivity is here based on the dimensions of the various nanoribbons. This solution is very complicated to manufacture with acceptable quality yield in large scale production and is consequently quite expensive to manufacture.
SUMMARY OF THE INVENTION In order to alleviate the problems mentioned above, the object of the present invention is to provide a practically useable graphene optoelectronic sensor which is well suited for large scale production at low manufacturing costs, using graphene in a novel way as a light absorbent and not as a resonator by itself as in known technology. Due to its unique composition, the inventive graphene optoelectronic sensor reaches a high external quantum efficiency of between 65-70% which is a substantial improvement over known graphene optoelectronic sensors with an external quantum efficiency below 10-15%. The unique inventive topography further enables the detection of more discrete wavelength bands on a sensor based on a single chip than what has so far been obtainable with previously known technology. Hence, the invention offers a graphene optoelectronic sensor including one or more optical resonators for detecting discrete light wavelength bands. The graphene optoelectronic sensor is especially characterized in: - that a graphene light absorbent layer is directly applied on a first face of an optical resonator cavity layer, said optical resonator cavity layer consisting of a material having a refractive index at or above 2, and - that a wavelength-selective light scattering unit is located on or adjacent to an opposite second face of each optical resonator cavity layer.
In an advantageous embodiment, read-out terminals extend from the graphene light absorbent layer to a complimentary metal-oxide semiconductor (CMOS) readout circuit.
A substrate layer is applied to the second face of each resonator cavity layer. This substrate layer consists of a material with a refractive index at or below 1.5, such as for example silicon dioxide (SiO2). In a well -functioning embodiment of the invention, the optical resonator cavity layer consists of silicon (Si).
Advantageously, the optical resonators are arranged for detecting a selection of infrared wavelength bands.
In an embodiment well suited for large-scale production, the graphene optoelectronic sensor is directly applied to a complementary metal-oxide semiconductor (CMOS) read-out circuit.
In an embodiment suited for detecting a broad range of wavelength bands, multiple light scattering units, each adapted for unique infrared bands, are superimposed on each other with dielectric interstitial walls.
In another embodiment of the invention, multiple light scattering units are arranged in an array.
In a multi-colour graphene optoelectronic sensor version, the optical resonators for detecting different wavelength bands exhibit mutually different proportions of thickness between the optical resonator cavity layer and the substrate layer. The total thickness of both the substrate layer and the optical resonator cavity layer are the same for all optical resonators of the graphene optoelectronic sensor.
The invention also includes a method for manufacturing a graphene optoelectronic sensor as described above. The method is especially characterized in the step of growing the graphene light absorbent layer directly onto a complimentary metaloxide semiconductor (CMOS) read-out circuit.
An alternative manufacturing method according to the invention involves the step of growing the substrate layer of the optical resonators directly onto a complimentary metal-oxide semiconductor (CMOS) read-out circuit.
The invention provides many advantages over previously known technology. For example, the optoelectronic sensor according to the invention is CMOS-compatible which makes it possible to grow the sensor directly on top of a readout circuit. Furthermore, the use of a single graphene light absorbent layer for several optical resonators on a common single chip enables a high quality yield in large scale production.
Further advantages and advantageous features of the invention are disclosed in the following description and in the dependent claims.
BRIEF DESCRIPTION OF THE DRAWINGS With reference to the appended drawings, below follows a more detailed description of embodiments of the invention cited as examples.
Fig. 1 shows a simplified schematic cross-sectional view of a graphene optoelectronic sensor according to the present invention. The shown embodiment includes multiple light scattering units, superimposed on each other with interstitial dielectric separation walls.
Fig. 2 shows an exemplifying shape of a light scattering unit in the form of a cross configuration.
Fig. 3 shows a further exemplifying shape of a light scattering unit in the form of a modified cross configuration.
Fig. 4 shows yet another exemplifying shape of a light scattering unit in the form of a square fence configuration.
Fig. 5 shows a simplified schematic cross-sectional view of multicolour graphene optoelectronic sensor according to a further exemplifying embodiment of the invention, having multiple optical resonators positioned side-by-side on a complimentary metal-oxide semiconductor (CMOS) read-out circuit.
Fig. 6 shows a graph of infrared target wavelength bands for the photo sensor.
Fig. 7 shows a simplified schematic cross-sectional view of an alternative embodiment of the invention wherein the substrate layer is grown directly onto a complimentary metal-oxide semiconductor (CMOS) read-out circuit.
Fig. 8 shows an array of light scattering units according to a favourable embodiment of the invention.
Fig. 9 shows a partial schematic view cross-sectional view of a photo sensor according to the invention, in which the light scattering unit is positioned within the substrate layer at a small distance from the optical resonator cavity layer.
Fig. 10 finally shows a partial schematic view cross-sectional view of a photo sensor according to the invention, in which the light scattering unit is positioned within the substrate layer directly facing the optical resonator layer.
DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS OF THE INVENTION The invention will now be described with reference to embodiments of the invention and with reference to the appended drawings. With initial reference to Fig. 1 , this figure shows a simplified schematic cross-sectional view of a graphene optoelectronic sensor 1 according to an exemplifying embodiment of the present invention. The graphene optoelectronic sensor 1 includes an optical resonator 2 for detecting discrete light wavelength bands. Although the shown embodiment only has one single optical resonator 2, alternative embodiments with multiple optical resonators 2 will be described later in the description. A graphene light absorbent layer 3 is directly applied on a first face 4 of an optical resonator cavity layer 5. The optical resonator cavity layer 5 consists of a material having a refractive index at or above 2, such as for example silicon (Si). Germanium (Ge) may also be used in the optical resonator cavity layer 5, although it has a slightly narrower bandgap.
As further shown in Fig. 1 , a wavelength-selective light scattering unit 6 is located on an opposite second face 7 of each resonator cavity layer 5. The light-scattering unit 6 may alternatively be placed adjacent to an opposite second face 7 of each resonator cavity layer 5, which will be further described with reference to Fig 9 later in this description. Read-out terminals 8 extend from the graphene light absorbent layer 5 to a complimentary metal-oxide semiconductor (CMOS) readout circuit 9. The read-out terminals 8 are suitably made of a highly electrically conductive metal, such as aluminium or gold. In the shown embodiment, the graphene optoelectronic sensor 1 is directly applied to the complementary metaloxide semiconductor (CMOS) read-out circuit 9. The invention also includes a method for manufacturing a graphene optoelectronic sensor 1 by the step of growing the graphene light absorbent layer 3 directly onto the read-out circuit 9. This is conveniently achieved by means of chemical vapour deposition, often abbreviated CVD. In alternative, not shown embodiments, the graphene optoelectronic sensor 1 may instead be separate from the read-out circuit 9 as long as it is connected to the read-out circuit 9 via the read-out terminals 8.
A substrate layer 10 is applied to the second face 7 of each resonator cavity layer 5. This substrate layer 10 consists of a material with a refractive index at or below 1.5, such as for example silicon dioxide (SiO2) or glass.
The embodiment shown in Fig. 1 is especially adapted for detecting a broad range of wavelength bands and is therefore provided with two light scattering units 6 that are superimposed or stacked on each other with dielectric interstitial walls 11. Each light scattering unit is adapted for unique infrared bands by unique geometrical configurations. In alternative embodiments of the invention there may be more than two light scattering units 6 in a sandwiched compound of multiple light scattering units 6. The light scattering elements 6 may conveniently be positioned slightly rotated in relation to each other so as to expose a maximum light scattering surface to incident light.
As is further shown in Fig. 1, incident light is schematically illustrated by means of incident light arrows 12. In a practical embodiment of the invention, an antireflective coating layer 13 may be applied on the substrate layer 10. The anti reflective coating layer 13 may for example be made of aluminium oxide or aluminium nitride in a manner known per se.
The embodiment shown in Fig. 1 may be referred to as a “backward feeding topology”-version of the graphene optoelectronic sensor 1, as opposed to a “forward feeding topology”-version later to be described with reference to Fig. 7. This is because the incident light, as illustrated by means of the incident light arrows 12, enters the resonator cavity layer 5 via the second face 7 and not via the first face 4 where the graphene light absorbent layer is located. Flence, the light is reflected by the graphene light absorbent layer 3 and the light scattering unit 6 receives the reflected light - as indicated by the light arrows 16 in a reversed or “backwards direction”. The “backward feeding topology”-version of the graphene optoelectronic sensor 1 as shown in Fig. 1 is favourable in that this topology eliminates the need for longer read-out terminals 8, which saves expensive material cost.
In both the forward and backward feeding topology versions, the optical resonator cavity layer 5 forces the incident light to bounce inside the resonator cavity provided by the optical resonator cavity layer 5 and every time the trapped light impinges the graphene light absorbent layer 3, 2.3% of its power is absorbed by the graphene. It does not matter on which surface of the optical resonator cavity layer 5 the graphene is applied. In both embodiments, the silicon (or a material with similar refractive index) in the optical resonator cavity layer 5 constitutes the actual resonator and not the graphene itself as in previously known optoelectronic sensors based on graphene. Hence the invention introduces the use of graphene as a light absorbent layer 3 which - when applied directly to an optical resonator layer 5 as described, results in a high external quantum efficiency of between 65-70% which is a substantial improvement over known graphene optoelectronic sensors with an external quantum efficiency below 10-15%.
In Fig. 2, a light scattering unit 6 is shaped in an exemplifying shape of a cross. The dimensions of the cross are adapted for reflecting a predefined band of wavelengths. Correspondingly, in Fig. 3, a light scattering unit 6 is shaped in an exemplifying shape of a modified cross or “Maltese cross” configuration where the distal portions 14 are broader than the central portions 15 as shown. Another exemplifying embodiment is shown in Fig. 4, wherein a light scattering unit 6 is shaped in the form of a square fence configuration.
Fig. 5 illustrates a multicolour graphene optoelectronic sensor 1 according to a further exemplifying embodiment of the invention. This multicolour graphene optoelectronic sensor 1 is provided with multiple optical resonators 2 positioned side by side on a complimentary metal-oxide semiconductor (CMOS) read-out circuit 9 as shown in the figure. In the shown embodiment, an exemplifying number of three optical resonators 2 exhibit mutually different proportions of thickness between the optical resonator cavity layer 5 and the substrate layer 10. However, the total thickness, t, of both the substrate layer 10 and the optical resonator cavity layer 5 remains the same for all three optical resonators 2 as shown in the figure and typically measures about 1-2 pm. According to the invention, more optical resonators 2 than the three shown in Fig. 5 may be arranged on a single CMOS read-out circuit 9. A practical embodiment may for example include between four to six optical resonators 2 positioned side-by-side, for detecting four to six colours or desired wavelength bands. Separation walls 17 are located between the optical resonators 2. The separation walls 17 are preferably made of the same material as the substrate material, which in the shown example is silicon (Si). The graphene light absorbent layer 3 is etched in the manufacturing process so that gaps 18 are formed between neighbouring optical resonators 2, enabling individual wavelength detection read-out from each optical resonator 2. Just like in the previously described embodiment, this embodiment may have an anti-reflective coating layer 13 applied on the substrate layer 10.
Fig. 6 shows a graph of a selection of infrared target wavelength bands that may be detected by the graphene optoelectronic sensor 2. The wavelength, Image available on "Original document" in pm on the horizontal axis is here plotted against the transmittance, Tr, in % on the vertical axis.
An alternative embodiment of the graphene optoelectronic sensor 1 according to the invention is shown in Fig. 7. This embodiment may be referred to as a “forward feeding topology”-version of the graphene optoelectronic sensor 1, as opposed to the “backward feeding topology”-version described initially with reference to Fig. 1. Indeed, the embodiments shown in Figs. 5 and 7 are also of the “backward feeding topology”-version. Thus, In the “forward feeding topology” version shown in Fig. 7, the incident light, as illustrated by means of the incident light arrows 12, enters the resonator cavity layer 5 via the first face 4 where the graphene light absorbent layer is located. Flence, the light is here reflected by the light scattering unit 6 directly from a “forward direction”. In this embodiment the graphene optoelectronic sensor 1 has been manufactured by means of a method wherein the substrate layer 10 is grown directly onto the complimentary metal-oxide semiconductor (CMOS) read-out circuit 9. The resonator layer 5 is then applied on the substrate layer 10 and is then topped by the graphene light absorbent layer 3 and an anti-reflective coating layer 13, facing the incident light as illustrated by the incident light arrows 12. In this alternative embodiment, the read-out terminals 8 are longer than in the previous embodiments as they have to reach the now more distant graphene light absorbent layer 3. The read-out terminals are separated by separation walls 17 preferably made of the same material as in the substrate layer 10, like for example silicon oxide (SiO2).
Fig. 8 shows an alternative arrangement of multiple light scattering units 6. Here, the light scattering units 6 are arranged in an array 19.
Fig. 9 shows a partial schematic view cross-sectional view of a graphene optoelectronic sensor 1 , in which the light scattering unit 6 is embedded within the substrate layer 10 at a small distance, d, from the optical resonator cavity layer 5. Preferably, the distance, d, may be anywhere on the range of 0 to 1/10 of a desired detection wavelength, whereas the height, H, of the resonator layer 5 may typically be 1?4 of said desired wavelength. Fig. 10 finally shows a similar embodiment wherein the light scattering unit 6 is positioned within the substrate layer 10 but flush with the second face 7 of the resonator layer 5. Hence, in this embodiment, the distance, d, illustrated in Fig. 9 is zero.
It is to be understood that the present invention is not limited to the exemplifying embodiments described above and illustrated in the drawings and a skilled person will recognize that many changes and modifications may be made within the scope of the appended claims.
LIST OF REFERENCE NUMERALS USED IN THE DESCRIPTION AND IN THE ACCOMPANYING DRAWINGS: 1. Graphene optoelectronic sensor 2. Optical resonator 3. Graphene light absorbent layer 4. First face of resonator cavity layer . Optical resonator cavity layer 6. Wavelength-selective light scattering unit 7. Opposite second face of resonator cavity layer 8. Read-out terminals 9. CMOS Read-out circuit . Substrate layer 11.Dielectric interstitial walls between superimposed light scattering units 12. Incident light arrows 13. Anti-reflective coating layer 14. Distal portions of light scattering unit . Central portions of light scattering units 16. Reflected light arrows 17. Separation walls between multiple optical sensors 18. Etched gaps in the graphene light absorbent layer between optical resonators 19. Array of light scattering units t: Total thickness of both the substrate layer and optical resonator cavity layer d: Distance between light scattering unit and optical resonator cavity layer if the light scattering unit is embedded in the substrate layer.
H: Height of resonator layer Image available on "Original document" Wavelength of incident light in ?m Tr: Transmittance in %
Claims (12)
1. A graphene optoelectronic sensor (1) including one or more optical resonators (2) for detecting discrete light wavelength bands, characterized in: - that a graphene light absorbent layer (3) is directly applied on a first face of an optical resonator cavity layer (5), said optical resonator cavity layer (5) consisting of a material having a refractive index at or above 2, and - that a wavelength-selective light scattering unit (6) is located on or adjacent to an opposite second face (7) of each optical resonator cavity layer (5).
2. A graphene optoelectronic sensor (1) according to any one of the preceding claims, characterized in that read-out terminals (8) extend from the graphene light absorbent layer (3) to a complimentary metal-oxide semiconductor (CMOS) read-out circuit (9).
3. A graphene optoelectronic sensor (1) according to claim 1 or 2, characterized in that a substrate layer (10) is applied to said second face (7) of each resonator cavity layer (5), said substrate layer (10) consisting of a material with a refractive index at or below 1.5.
4. A graphene optoelectronic sensor (1) according to claim 3, characterized in that the substrate layer (10) includes silicon dioxide (SiO2).
5. A graphene optoelectronic sensor (1) according to any one of the preceding claims, characterized in that the optical resonator cavity layer (5) consists of silicon (Si).
6. A graphene optoelectronic sensor (1) according to any one of the preceding claims, characterized in that the optical resonators (2) are arranged for detecting a selection of infrared wavelength bands.
7. A graphene optoelectronic sensor (1) according to any one of the preceding claims, characterized in that it is directly applied to a complementary metal-oxide semiconductor (CMOS) read-out circuit (9).
8. A graphene optoelectronic sensor (1) according to any one of the preceding claims, characterized in that multiple light scattering units (6), each adapted for unique infrared bands, are superimposed on each other with dielectric interstitial dielectric (11).
9. A graphene optoelectronic sensor (1) according to any one of the preceding claims, characterized in that multiple light scattering units (6) are arranged in an array.
10. A graphene optoelectronic sensor (1) according to any one of the claims 3-9, characterized in that the optical resonators (2) for detecting different wavelength bands exhibit mutually different proportions of thickness between the optical resonator cavity layer (5) and the substrate layer (10), the total thickness (T) of both the substrate layer (10) and the optical resonator cavity layer (5) being the same for all optical resonators (2) of the graphene optoelectronic sensor (1 ).
11. Method for manufacturing a graphene optoelectronic sensor (1) according to any one of the preceding claims, characterized in the step of growing the graphene light absorbent layer (3) directly onto a complimentary metal-oxide semiconductor (CMOS) read-out circuit (9).
12. Method for manufacturing a graphene optoelectronic sensor (1) according to any one of the claims 3-10, characterized in the step of growing the substrate layer (10) directly onto a complimentary metal-oxide semiconductor (CMOS) readout circuit (9).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE1750011A SE1750011A1 (en) | 2017-01-10 | 2017-01-10 | A Graphene Optoelectronic Sensor |
| PCT/SE2018/050012 WO2018132055A1 (en) | 2017-01-10 | 2018-01-09 | A graphene optoelectronic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE1750011A SE1750011A1 (en) | 2017-01-10 | 2017-01-10 | A Graphene Optoelectronic Sensor |
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| SE540220C2 true SE540220C2 (en) | 2018-05-02 |
| SE1750011A1 SE1750011A1 (en) | 2018-05-02 |
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| SE1750011A SE1750011A1 (en) | 2017-01-10 | 2017-01-10 | A Graphene Optoelectronic Sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| ES2369953B1 (en) * | 2011-08-02 | 2012-10-09 | Fundació Institut De Ciències Fotòniques | OPTO-ELECTRONIC PLATFORM WITH CARBON BASED DRIVER AND QUANTIC POINTS AND PHOTOTRANSISTOR THAT INCLUDES A PLATFORM OF THIS TYPE |
| US8610989B2 (en) * | 2011-10-31 | 2013-12-17 | International Business Machines Corporation | Optoelectronic device employing a microcavity including a two-dimensional carbon lattice structure |
| WO2013148349A1 (en) * | 2012-03-30 | 2013-10-03 | The Trustees Of Columbia University In The City Of New York | Graphene photonics for resonator-enhanced electro-optic devices and all-optical interactions |
-
2017
- 2017-01-10 SE SE1750011A patent/SE1750011A1/en unknown
-
2018
- 2018-01-09 WO PCT/SE2018/050012 patent/WO2018132055A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| SE1750011A1 (en) | 2018-05-02 |
| WO2018132055A1 (en) | 2018-07-19 |
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