SE1750011A1 - A Graphene Optoelectronic Sensor - Google Patents

A Graphene Optoelectronic Sensor

Info

Publication number
SE1750011A1
SE1750011A1 SE1750011A SE1750011A SE1750011A1 SE 1750011 A1 SE1750011 A1 SE 1750011A1 SE 1750011 A SE1750011 A SE 1750011A SE 1750011 A SE1750011 A SE 1750011A SE 1750011 A1 SE1750011 A1 SE 1750011A1
Authority
SE
Sweden
Prior art keywords
optoelectronic sensor
graphene
resonator cavity
optical resonator
cavity layer
Prior art date
Application number
SE1750011A
Other languages
Swedish (sv)
Other versions
SE540220C2 (en
Inventor
Habibpour Omid
Original Assignee
Chalmers Ventures Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chalmers Ventures Ab filed Critical Chalmers Ventures Ab
Priority to SE1750011A priority Critical patent/SE540220C2/en
Priority to PCT/SE2018/050012 priority patent/WO2018132055A1/en
Publication of SE1750011A1 publication Critical patent/SE1750011A1/en
Publication of SE540220C2 publication Critical patent/SE540220C2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

The invention relates to a graphene optoelectronic sensor (1) including one or more optical resonators (2) for detecting discrete light wavelength bands. The graphene optoelectronic sensor is especially characterized in:- that a graphene light absorbent layer (3) is directly applied on a first face of an optical resonator cavity layer (5), said optical resonator cavity layer (5) consisting of a material having a refractive index at or above 2, and- that a wavelength-selective light scattering unit (6) is located on or adjacent to an opposite second face (7) of each optical resonator cavity layer (5).
SE1750011A 2017-01-10 2017-01-10 A Graphene Optoelectronic Sensor SE540220C2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SE1750011A SE540220C2 (en) 2017-01-10 2017-01-10 A Graphene Optoelectronic Sensor
PCT/SE2018/050012 WO2018132055A1 (en) 2017-01-10 2018-01-09 A graphene optoelectronic sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE1750011A SE540220C2 (en) 2017-01-10 2017-01-10 A Graphene Optoelectronic Sensor

Publications (2)

Publication Number Publication Date
SE1750011A1 true SE1750011A1 (en) 2018-05-02
SE540220C2 SE540220C2 (en) 2018-05-02

Family

ID=62839846

Family Applications (1)

Application Number Title Priority Date Filing Date
SE1750011A SE540220C2 (en) 2017-01-10 2017-01-10 A Graphene Optoelectronic Sensor

Country Status (2)

Country Link
SE (1) SE540220C2 (en)
WO (1) WO2018132055A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114659625B (en) * 2022-03-17 2023-04-25 电子科技大学 Performance-adjustable bolometer based on graphene mechanical vibrator and preparation method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2369953B1 (en) * 2011-08-02 2012-10-09 Fundació Institut De Ciències Fotòniques OPTO-ELECTRONIC PLATFORM WITH CARBON BASED DRIVER AND QUANTIC POINTS AND PHOTOTRANSISTOR THAT INCLUDES A PLATFORM OF THIS TYPE
US8610989B2 (en) * 2011-10-31 2013-12-17 International Business Machines Corporation Optoelectronic device employing a microcavity including a two-dimensional carbon lattice structure
WO2013148349A1 (en) * 2012-03-30 2013-10-03 The Trustees Of Columbia University In The City Of New York Graphene photonics for resonator-enhanced electro-optic devices and all-optical interactions

Also Published As

Publication number Publication date
SE540220C2 (en) 2018-05-02
WO2018132055A1 (en) 2018-07-19

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