WO2018132055A1 - A graphene optoelectronic sensor - Google Patents

A graphene optoelectronic sensor Download PDF

Info

Publication number
WO2018132055A1
WO2018132055A1 PCT/SE2018/050012 SE2018050012W WO2018132055A1 WO 2018132055 A1 WO2018132055 A1 WO 2018132055A1 SE 2018050012 W SE2018050012 W SE 2018050012W WO 2018132055 A1 WO2018132055 A1 WO 2018132055A1
Authority
WO
WIPO (PCT)
Prior art keywords
graphene
layer
optoelectronic sensor
resonator cavity
read
Prior art date
Application number
PCT/SE2018/050012
Other languages
French (fr)
Inventor
Omid HABIBPOUR
Original Assignee
Chalmers Ventures Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chalmers Ventures Ab filed Critical Chalmers Ventures Ab
Publication of WO2018132055A1 publication Critical patent/WO2018132055A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a graphene optoelectronic sensor including one or more optical resonators for detecting discrete light wavelength bands primarily within the infrared wavelength bands.
  • the invention involves the novel use of a graphene layer as a light absorbent.
  • the object of the present invention is to provide a practically useable graphene optoelectronic sensor which is well suited for large scale production at low manufacturing costs, using graphene in a novel way as a light absorbent and not as a resonator by itself as in known technology. Due to its unique composition, the inventive graphene optoelectronic sensor reaches a high external quantum efficiency of between 65- 70% which is a substantial improvement over known graphene optoelectronic sensors with an external quantum efficiency below 10-15%.
  • the unique inventive topography further enables the detection of more discrete wavelength bands on a sensor based on a single chip than what has so far been obtainable with previously known technology.
  • the invention offers a graphene optoelectronic sensor including one or more optical resonators for detecting discrete light wavelength bands.
  • the graphene optoelectronic sensor is especially characterized in:
  • a graphene light absorbent layer is directly applied on a first face of an optical resonator cavity layer, said optical resonator cavity layer consisting of a material having a refractive index at or above 2, and
  • CMOS complimentary metal-oxide semiconductor
  • a substrate layer is applied to the second face of each resonator cavity layer.
  • This substrate layer consists of a material with a refractive index at or below 1 .5, such as for example silicon dioxide (SiO2).
  • the optical resonator cavity layer consists of silicon (Si).
  • the optical resonators are arranged for detecting a selection of infrared wavelength bands.
  • the graphene optoelectronic sensor is directly applied to a complementary metal-oxide semiconductor (CMOS) read-out circuit.
  • CMOS complementary metal-oxide semiconductor
  • multiple light scattering units are superimposed on each other with dielectric interstitial walls.
  • multiple light scattering units are arranged in an array.
  • the shape of the light scattering unit or units may be different and could for example be designed in the shape of a cross having cross bars having a rectangular shape or shaped as a modified cross having cross bars being more narrow in its central portions so as to form a "Maltese cross" shape.
  • the dimensions of the cross are adapted for reflecting a predefined band of wavelengths.
  • Other possible shapes of the net light scattering unit are for example a circular plate or being shaped of tangled up oblong bars forming a square net configuration.
  • the optical resonators for detecting different wavelength bands exhibit mutually different proportions of thickness between the optical resonator cavity layer and the substrate layer.
  • the total thickness of both the substrate layer and the optical resonator cavity layer are the same for all optical resonators of the graphene optoelectronic sensor.
  • the first face of the resonator cavity layer also includes a metal layer and one or two semiconductor layers located on top of the CMOS read out circuit. These layers are sandwiched in different order on top of each other so as to form different absorber stack configurations.
  • the graphene light absorbent layer at the first face of the resonator cavity layer forms part of an absorber stack also comprising a metal layer and one or several semiconductor layer.
  • the graphene layer is located on top, i.e. furthest away from the CMOS read out circuit and a semiconductor layer sandwiched between the graphene layer and a metal base layer being closest to the CMOS readout circuit.
  • the metal layer helps to have a better reflection and avoids light to penetrate into the readout circuit while the semiconductor can enhance absorption.
  • the semiconductor layer and metal layer are preferably designed such that there is an isolating gap between these layers and the read out terminals while the graphene layer may be in contact with the read out terminals. This embodiment may thus improve certain features of the optoelectronic sensor as explained above but since graphene does not have a bandgap so the first and the original design will have a high dark current.
  • the respective layers of semiconductors and metals on respective side of the graphene layer in the absorber stack configuration are designed to be connected to a respective read out terminal only and isolated, e.g. by an air gap, to avoid contact between the other read-out terminal.
  • the absorber stack could be designed to include further metal and/or semiconductor layers. It is also possible to completely exclude either the metal layer or the semiconductor layer and only include one or several layers of semiconductors or metal. This may be advantageous from production process even though the absorber stack may lose some of the desired properties achieved when using both a metal layer and a semiconductor layer.
  • the invention also includes a method for manufacturing a graphene optoelectronic sensor as described above.
  • the method is especially characterized in the step of growing the graphene light absorbent layer directly onto a complimentary metal- oxide semiconductor (CMOS) read-out circuit or possibly on an additional metal or semiconductor layer in an absorber stack configuration.
  • CMOS complimentary metal- oxide semiconductor
  • An alternative manufacturing method involves the step of growing the substrate layer of the optical resonators directly onto a complimentary metal-oxide semiconductor (CMOS) read-out circuit.
  • CMOS complimentary metal-oxide semiconductor
  • the optoelectronic sensor according to the invention is CMOS- compatible which makes it possible to grow the sensor directly on top of a readout circuit.
  • the use of a single graphene light absorbent layer for several optical resonators on a common single chip enables a high quality yield in large scale production. Further advantages and advantageous features of the invention are disclosed in the following description and in the dependent claims.
  • FIG. 1 shows a simplified schematic cross-sectional view of a graphene optoelectronic sensor according to the present invention.
  • the shown embodiment includes multiple light scattering units, superimposed on each other with interstitial dielectric separation walls.
  • shows an exemplifying shape of a light scattering unit in the form of a circular plate configuration shows yet another exemplifying shape of a light scattering unit in the form of a square fence configuration.
  • CMOS complimentary metal-oxide semiconductor
  • CMOS complimentary metal-oxide semiconductor
  • Fig. 10 finally shows a partial schematic view cross-sectional view of a photo sensor according to the invention, in which the light scattering unit is positioned within the substrate layer directly facing the optical resonator layer.
  • Fig. 1 1 shows a detailed view of the first face of the resonator cavity layer including graphene light absorbent layer.
  • Fig. 12 shows different absorber stack configurations in the first face of the resonator cavity layer including graphene and semiconductors DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS OF THE INVENTION
  • FIG. 1 shows a simplified schematic cross-sectional view of a graphene optoelectronic sensor 1 according to an exemplifying embodiment of the present invention.
  • the graphene optoelectronic sensor 1 includes an optical resonator 2 for detecting discrete light wavelength bands.
  • optical resonator 2 for detecting discrete light wavelength bands.
  • a graphene light absorbent layer 3 is directly applied on a first face 4 of an optical resonator cavity layer 5.
  • the optical resonator cavity layer 5 consists of a material having a refractive index at or above 2, such as for example silicon (Si). Germanium (Ge) may also be used in the optical resonator cavity layer 5, although it has a slightly narrower bandgap. In order to operate at shorter wavelengths the optical resonator can be made from Titanium Oxide ( ⁇ 2). As further shown in Fig. 1 , a wavelength-selective light scattering unit 6 is located on an opposite second face 7 of each resonator cavity layer 5. The light-scattering unit 6 may alternatively be placed adjacent to an opposite second face 7 of each resonator cavity layer 5, which will be further described with reference to Fig 9 later in this description.
  • Read-out terminals 8 extend from the graphene light absorbent layer 5 to a complimentary metal-oxide semiconductor (CMOS) readout circuit 9.
  • the read-out terminals 8 are suitably made of a highly electrically conductive metal, such as aluminium or gold.
  • the graphene optoelectronic sensor 1 is directly applied to the complementary metal- oxide semiconductor (CMOS) read-out circuit 9.
  • the invention also includes a method for manufacturing a graphene optoelectronic sensor 1 by the step of growing the graphene light absorbent layer 3 directly onto the read-out circuit 9. This is conveniently achieved by means of chemical vapour deposition, often abbreviated CVD.
  • the graphene optoelectronic sensor 1 may instead be separate from the read-out circuit 9 as long as it is connected to the read-out circuit 9 via the read-out terminals 8.
  • a substrate layer 10 is applied to the second face 7 of each resonator cavity layer 5.
  • This substrate layer 10 consists of a material with a refractive index at or below 1 .5, such as for example silicon dioxide (SiO2) or glass.
  • the embodiment shown in Fig. 1 is especially adapted for detecting a broad range of wavelength bands and is therefore provided with two light scattering units 6 that are superimposed or stacked on each other with dielectric interstitial walls 1 1 .
  • Each light scattering unit is adapted for unique infrared bands by unique geometrical configurations.
  • the light scattering elements 6 may conveniently be positioned slightly rotated in relation to each other so as to expose a maximum light scattering surface to incident light.
  • incident light is schematically illustrated by means of incident light arrows 12.
  • an anti- reflective coating layer 13 may be applied on the substrate layer 10.
  • the anti- reflective coating layer 13 may for example be made of aluminium oxide or aluminium nitride in a manner known per se.
  • the embodiment shown in Fig. 1 may be referred to as a "backward feeding topology" -version of the graphene optoelectronic sensor 1 , as opposed to a "forward feeding topology" -version later to be described with reference to Fig. 7.
  • the optical resonator cavity layer 5 forces the incident light to bounce inside the resonator cavity provided by the optical resonator cavity layer 5 and every time the trapped light impinges the graphene light absorbent layer 3, 2.3% of its power is absorbed by the graphene. It does not matter on which surface of the optical resonator cavity layer 5 the graphene is applied.
  • the silicon (or a material with similar refractive index) in the optical resonator cavity layer 5 constitutes the actual resonator and not the graphene itself as in previously known optoelectronic sensors based on graphene.
  • a light scattering unit 6 is shaped in an exemplifying shape of a cross.
  • the dimensions of the cross are adapted for reflecting a predefined band of wavelengths.
  • a light scattering unit 6 is shaped in an exemplifying shape of a modified cross or "Maltese cross" configuration where the distal portions 14 are broader than the central portions 15 as shown.
  • FIG. 3 Another exemplifying embodiment is shown in Fig. 3, wherein a light scattering unit 6 is shaped in the form of a circular plate configuration.
  • FIG. 4 Another exemplifying embodiment is shown in Fig. 4, wherein a light scattering unit 6 is shaped in the form of a square fence configuration.
  • Fig. 5 illustrates a multicolour graphene optoelectronic sensor 1 according to a further exemplifying embodiment of the invention.
  • This multicolour graphene optoelectronic sensor 1 is provided with multiple optical resonators 2 positioned side by side on a complimentary metal-oxide semiconductor (CMOS) read-out circuit 9 as shown in the figure.
  • CMOS complimentary metal-oxide semiconductor
  • an exemplifying number of three optical resonators 2 exhibit mutually different proportions of thickness between the optical resonator cavity layer 5 and the substrate layer 10.
  • the total thickness, t, of both the substrate layer 10 and the optical resonator cavity layer 5 remains the same for all three optical resonators 2 as shown in the figure and typically measures about 1 -2 pm.
  • more optical resonators 2 than the three shown in Fig. 5 may be arranged on a single CMOS read-out circuit 9.
  • a practical embodiment may for example include between four to six optical resonators 2 positioned side-by-side, for detecting four to six colours or desired wavelength bands. Separation walls 17 are located between the optical resonators 2.
  • the separation walls 17 are preferably made of the same material as the substrate material, which in the shown example is silicon (Si).
  • the graphene light absorbent layer 3 is etched in the manufacturing process so that gaps 18 are formed between neighbouring optical resonators 2, enabling individual wavelength detection read-out from each optical resonator 2.
  • this embodiment may have an anti-reflective coating layer 13 applied on the substrate layer 10.
  • Fig. 6 shows a graph of a selection of infrared target wavelength bands that may be detected by the graphene optoelectronic sensor 2.
  • the wavelength, ⁇ , in pm on the horizontal axis is here plotted against the transmittance, Tr, in % on the vertical axis.
  • FIG. 7 An alternative embodiment of the graphene optoelectronic sensor 1 according to the invention is shown in Fig. 7.
  • This embodiment may be referred to as a "forward feeding topology" -version of the graphene optoelectronic sensor 1 , as opposed to the "backward feeding topology” -version described initially with reference to Fig. 1 .
  • the embodiments shown in Figs. 5 and 7 are also of the "backward feeding topology” -version.
  • the incident light as illustrated by means of the incident light arrows 12, enters the resonator cavity layer 5 via the first face 4 where the graphene light absorbent layer is located.
  • the graphene optoelectronic sensor 1 has been manufactured by means of a method wherein the substrate layer 10 is grown directly onto the complimentary metal-oxide semiconductor (CMOS) read-out circuit 9.
  • CMOS complimentary metal-oxide semiconductor
  • the resonator layer 5 is then applied on the substrate layer 10 and is then topped by the graphene light absorbent layer 3 and an anti-reflective coating layer 13, facing the incident light as illustrated by the incident light arrows 12.
  • the read-out terminals 8 are longer than in the previous embodiments as they have to reach the now more distant graphene light absorbent layer 3.
  • the read-out terminals are separated by separation walls 17 preferably made of the same material as in the substrate layer 10, like for example silicon oxide (S1O2).
  • Fig. 8 shows an alternative arrangement of multiple light scattering units 6.
  • the light scattering units 6 are arranged in an array 19.
  • Fig. 9 shows a partial schematic view cross-sectional view of a graphene optoelectronic sensor 1 , in which the light scattering unit 6 is embedded within the substrate layer 10 at a small distance, d, from the optical resonator cavity layer 5.
  • the distance, d may be anywhere on the range of 0 to 1/10 of a desired detection wavelength, whereas the height, H, of the resonator layer 5 may typically be 1 ⁇ 4 of said desired wavelength.
  • Fig. 10 finally shows a similar embodiment wherein the light scattering unit 6 is positioned within the substrate layer 10 but flush with the second face 7 of the resonator layer 5.
  • the distance, d, illustrated in Fig. 9 is zero.
  • Fig. 1 1 shows a detailed view of the first face of the resonator cavity layer 4 consisting of a graphene light absorbent layer 3.
  • the graphene light absorbent layer 3 is located on and in contact with the CMOS read-out circuit extending between and in contact with the read-out terminals 8 in order to absorb the incident light arrows passing through the wavelength-selective light scattering unit 6.
  • the first face of the resonator cavity layer 4 may only comprise a graphene layer 3 could it also comprise a metal layer 20 and a first semiconductor layer 21 a, possibly also a second semiconductor layer 21 b, in order to form an absorber stack 22 a-c as shown in Figs. 12A-C.
  • Fig. 12A comprises the absorber stack 22a the graphene light absorbent layer 3 on top of the first semiconductor layer 21 a which is sandwiched between the graphene light absorbent layer and the metal layer 20.
  • the graphene light absorbent layer 3 stretches all the way between the read-out terminals 8 while the first semiconductor layer 21 a and the metal layer 20 are spaced apart from the read-out terminals 8.
  • Fig. 12B comprises the absorber stack 22b a graphene light absorbent layer 3 which is sandwiched between the first semiconductor layer 21 a on top and the metal layer 20 beneath.
  • the graphene light absorbent layer 3 and the metal layer 20 are in contact with the first one of the read-out terminals 8a and spaced apart from the other read out terminal 8b while the first semiconductor layer 21 a on top of the graphene light absorbent layer 3 is spaced apart from the first one of the read-out terminals 8a and spaced apart from the other one 8b.
  • FIG. 12C differs from figure 12B in that it comprises a further second semiconductor layer 21 b in the absorber stack 22c sandwiched between the first semiconductor layer 21 a on top and the graphene light absorbent layer 3 beneath.
  • the graphene light absorbent layer 3 and the metal layer 20 are in contact with the first one of the read-out terminals 8a and spaced apart from the other read out terminal 8b while the first semiconductor layer 21 a on top of the graphene light absorbent layer 3 is spaced apart from the first one of the read-out terminals 8a and spaced apart from the other one 8b.
  • the metal layer can be one selected from Ag, Au, Al and Cu.
  • Semiconductor 1 may be a typical semiconductor such as Si, Ge and CuO and semiconductor 2 could be a wide- bandgap semiconductor such as ⁇ 02, NiO, Cr203 and Cu20.
  • the metal layer helps to have a better reflection and avoids light to penetrate into the readout circuit while the semiconductor can enhance absorption.
  • t Total thickness of both the substrate layer and optical resonator cavity layer
  • d Distance between light scattering unit and optical resonator cavity layer if the light scattering unit is embedded in the substrate layer.
  • Tr Transmittance in %

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

The invention relates to a graphene optoelectronic sensor (1) including one or more optical resonators (2) for detecting discrete light wavelength bands. The graphene optoelectronic sensor is especially characterized in: -that a graphene light absorbent layer (3) is directly applied on a first face of an optical resonator cavity layer(5), said optical resonator cavity layer (5) consisting of a material having a refractive index at or above 2, and -that a wavelength-selective light scattering unit (6) is located on or adjacent to an opposite second face (7) of each optical resonator cavity layer (5).

Description

A Graphene Optoelectronic Sensor
TECHNICAL FIELD
The invention relates to a graphene optoelectronic sensor including one or more optical resonators for detecting discrete light wavelength bands primarily within the infrared wavelength bands. The invention involves the novel use of a graphene layer as a light absorbent.
BACKGROUND
In a large range of applications, imaging has become a popular method for obtaining data. Certain applications require an extraordinary quality to be able to correctly identify and distinguish individual objects in an image. To this end, much effort has been made in the use of graphene in optoelectronic sensors. Graphene with its single layer of honeycomb carbon lattice and single-pass light absorption at or below 2.5% has proven potentially very useable in the field of optoelectronics.
Currently known studies and attempts at obtaining a useable photo sensor involving graphene include the use of graphene as a resonator in itself. An example of this is described in WO1508373A1 which discloses a graphene sheet as a resonator layer supported at two points. The sensor includes a detection circuit responsive to piezo-resistive changes in the resonator graphene sheet. A problem with the use of graphene as a resonator in itself is however the low single-pass light absorption at or below 2.5% of graphene, which results in a photo sensor with relatively low internal quantum efficiency. Experiments have been made to improve the internal quantum efficiency by adding dots of various metals on the graphene 2D honeycomb lattice, but with only limited improvements. Another example of graphene used in a photo sensor is described in US 2015/0357504 A1 . Here, a graphene based transistor-type sensor is used as the active sensor device. A delicate structure of multiple very thin nanoribbons of graphene is grown on a substrate layer. The frequency sensitivity is here based on the dimensions of the various nanoribbons. This solution is very complicated to manufacture with acceptable quality yield in large scale production and is consequently quite expensive to manufacture.
SUMMARY OF THE INVENTION In order to alleviate the problems mentioned above, the object of the present invention is to provide a practically useable graphene optoelectronic sensor which is well suited for large scale production at low manufacturing costs, using graphene in a novel way as a light absorbent and not as a resonator by itself as in known technology. Due to its unique composition, the inventive graphene optoelectronic sensor reaches a high external quantum efficiency of between 65- 70% which is a substantial improvement over known graphene optoelectronic sensors with an external quantum efficiency below 10-15%. The unique inventive topography further enables the detection of more discrete wavelength bands on a sensor based on a single chip than what has so far been obtainable with previously known technology. Hence, the invention offers a graphene optoelectronic sensor including one or more optical resonators for detecting discrete light wavelength bands. The graphene optoelectronic sensor is especially characterized in:
- that a graphene light absorbent layer is directly applied on a first face of an optical resonator cavity layer, said optical resonator cavity layer consisting of a material having a refractive index at or above 2, and
- that a wavelength-selective light scattering unit is located on or adjacent to an opposite second face of each optical resonator cavity layer. In an advantageous embodiment, read-out terminals extend from the graphene light absorbent layer to a complimentary metal-oxide semiconductor (CMOS) readout circuit. A substrate layer is applied to the second face of each resonator cavity layer. This substrate layer consists of a material with a refractive index at or below 1 .5, such as for example silicon dioxide (SiO2). In a well-functioning embodiment of the invention, the optical resonator cavity layer consists of silicon (Si).
Advantageously, the optical resonators are arranged for detecting a selection of infrared wavelength bands.
In an embodiment well suited for large-scale production, the graphene optoelectronic sensor is directly applied to a complementary metal-oxide semiconductor (CMOS) read-out circuit.
In an embodiment suited for detecting a broad range of wavelength bands, multiple light scattering units, each adapted for unique infrared bands, are superimposed on each other with dielectric interstitial walls.
In another embodiment of the invention, multiple light scattering units are arranged in an array. The shape of the light scattering unit or units may be different and could for example be designed in the shape of a cross having cross bars having a rectangular shape or shaped as a modified cross having cross bars being more narrow in its central portions so as to form a "Maltese cross" shape. The dimensions of the cross are adapted for reflecting a predefined band of wavelengths. Other possible shapes of the net light scattering unit are for example a circular plate or being shaped of tangled up oblong bars forming a square net configuration.
In a multi-colour graphene optoelectronic sensor version, the optical resonators for detecting different wavelength bands exhibit mutually different proportions of thickness between the optical resonator cavity layer and the substrate layer. The total thickness of both the substrate layer and the optical resonator cavity layer are the same for all optical resonators of the graphene optoelectronic sensor.
In still a further embodiment, the first face of the resonator cavity layer also includes a metal layer and one or two semiconductor layers located on top of the CMOS read out circuit. These layers are sandwiched in different order on top of each other so as to form different absorber stack configurations. Hence, in this embodiment the graphene light absorbent layer at the first face of the resonator cavity layer forms part of an absorber stack also comprising a metal layer and one or several semiconductor layer.
According to one embodiment, the graphene layer is located on top, i.e. furthest away from the CMOS read out circuit and a semiconductor layer sandwiched between the graphene layer and a metal base layer being closest to the CMOS readout circuit. In this embodiment, the metal layer helps to have a better reflection and avoids light to penetrate into the readout circuit while the semiconductor can enhance absorption. The semiconductor layer and metal layer are preferably designed such that there is an isolating gap between these layers and the read out terminals while the graphene layer may be in contact with the read out terminals. This embodiment may thus improve certain features of the optoelectronic sensor as explained above but since graphene does not have a bandgap so the first and the original design will have a high dark current.
To avoid dark currents it is possible to have a vertical device where graphene and other semiconductors can be put on top of each other. In these absorber stack configurations a barrier will be formed on the interface which block dark currents. The backside metal is used to have a better reflection and avoids light to penetrate into the readout circuit. The respective layers of semiconductors and metals on respective side of the graphene layer in the absorber stack configuration are designed to be connected to a respective read out terminal only and isolated, e.g. by an air gap, to avoid contact between the other read-out terminal. The absorber stack could be designed to include further metal and/or semiconductor layers. It is also possible to completely exclude either the metal layer or the semiconductor layer and only include one or several layers of semiconductors or metal. This may be advantageous from production process even though the absorber stack may lose some of the desired properties achieved when using both a metal layer and a semiconductor layer.
The invention also includes a method for manufacturing a graphene optoelectronic sensor as described above. The method is especially characterized in the step of growing the graphene light absorbent layer directly onto a complimentary metal- oxide semiconductor (CMOS) read-out circuit or possibly on an additional metal or semiconductor layer in an absorber stack configuration.
An alternative manufacturing method according to the invention involves the step of growing the substrate layer of the optical resonators directly onto a complimentary metal-oxide semiconductor (CMOS) read-out circuit.
The invention provides many advantages over previously known technology. For example, the optoelectronic sensor according to the invention is CMOS- compatible which makes it possible to grow the sensor directly on top of a readout circuit. Furthermore, the use of a single graphene light absorbent layer for several optical resonators on a common single chip enables a high quality yield in large scale production. Further advantages and advantageous features of the invention are disclosed in the following description and in the dependent claims.
BRIEF DESCRIPTION OF THE DRAWINGS
With reference to the appended drawings, below follows a more detailed description of embodiments of the invention cited as examples. shows a simplified schematic cross-sectional view of a graphene optoelectronic sensor according to the present invention. The shown embodiment includes multiple light scattering units, superimposed on each other with interstitial dielectric separation walls. shows an exemplifying shape of a light scattering unit in the form of a cross configuration. shows a further exemplifying shape of a light scattering unit in the form of a modified cross configuration. shows an exemplifying shape of a light scattering unit in the form of a circular plate configuration shows yet another exemplifying shape of a light scattering unit in the form of a square fence configuration. shows a simplified schematic cross-sectional view of multicolour graphene optoelectronic sensor according to a further exemplifying embodiment of the invention, having multiple optical resonators positioned side-by-side on a complimentary metal-oxide semiconductor (CMOS) read-out circuit. shows a graph of infrared target wavelength bands for the photo sensor. shows a simplified schematic cross-sectional view of an
alternative embodiment of the invention wherein the
substrate layer is grown directly onto a complimentary metal-oxide semiconductor (CMOS) read-out circuit. shows an array of light scattering units according to a favourable embodiment of the invention. shows a partial schematic view cross-sectional view of a photo sensor according to the invention, in which the light scattering unit is positioned within the substrate layer at a small distance from the optical resonator cavity layer.
Fig. 10 finally shows a partial schematic view cross-sectional view of a photo sensor according to the invention, in which the light scattering unit is positioned within the substrate layer directly facing the optical resonator layer.
Fig. 1 1 shows a detailed view of the first face of the resonator cavity layer including graphene light absorbent layer.
Fig. 12 shows different absorber stack configurations in the first face of the resonator cavity layer including graphene and semiconductors DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS OF THE INVENTION
The invention will now be described with reference to embodiments of the invention and with reference to the appended drawings. With initial reference to Fig. 1 , this figure shows a simplified schematic cross-sectional view of a graphene optoelectronic sensor 1 according to an exemplifying embodiment of the present invention. The graphene optoelectronic sensor 1 includes an optical resonator 2 for detecting discrete light wavelength bands. Although the shown embodiment only has one single optical resonator 2, alternative embodiments with multiple optical resonators 2 will be described later in the description. A graphene light absorbent layer 3 is directly applied on a first face 4 of an optical resonator cavity layer 5. The optical resonator cavity layer 5 consists of a material having a refractive index at or above 2, such as for example silicon (Si). Germanium (Ge) may also be used in the optical resonator cavity layer 5, although it has a slightly narrower bandgap. In order to operate at shorter wavelengths the optical resonator can be made from Titanium Oxide (ΤΊΟ2). As further shown in Fig. 1 , a wavelength-selective light scattering unit 6 is located on an opposite second face 7 of each resonator cavity layer 5. The light-scattering unit 6 may alternatively be placed adjacent to an opposite second face 7 of each resonator cavity layer 5, which will be further described with reference to Fig 9 later in this description. Read-out terminals 8 extend from the graphene light absorbent layer 5 to a complimentary metal-oxide semiconductor (CMOS) readout circuit 9. The read-out terminals 8 are suitably made of a highly electrically conductive metal, such as aluminium or gold. In the shown embodiment, the graphene optoelectronic sensor 1 is directly applied to the complementary metal- oxide semiconductor (CMOS) read-out circuit 9. The invention also includes a method for manufacturing a graphene optoelectronic sensor 1 by the step of growing the graphene light absorbent layer 3 directly onto the read-out circuit 9. This is conveniently achieved by means of chemical vapour deposition, often abbreviated CVD. In alternative, not shown embodiments, the graphene optoelectronic sensor 1 may instead be separate from the read-out circuit 9 as long as it is connected to the read-out circuit 9 via the read-out terminals 8.
A substrate layer 10 is applied to the second face 7 of each resonator cavity layer 5. This substrate layer 10 consists of a material with a refractive index at or below 1 .5, such as for example silicon dioxide (SiO2) or glass.
The embodiment shown in Fig. 1 is especially adapted for detecting a broad range of wavelength bands and is therefore provided with two light scattering units 6 that are superimposed or stacked on each other with dielectric interstitial walls 1 1 . Each light scattering unit is adapted for unique infrared bands by unique geometrical configurations. In alternative embodiments of the invention there may be more than two light scattering units 6 in a sandwiched compound of multiple light scattering units 6. The light scattering elements 6 may conveniently be positioned slightly rotated in relation to each other so as to expose a maximum light scattering surface to incident light.
As is further shown in Fig. 1 , incident light is schematically illustrated by means of incident light arrows 12. In a practical embodiment of the invention, an anti- reflective coating layer 13 may be applied on the substrate layer 10. The anti- reflective coating layer 13 may for example be made of aluminium oxide or aluminium nitride in a manner known per se. The embodiment shown in Fig. 1 may be referred to as a "backward feeding topology" -version of the graphene optoelectronic sensor 1 , as opposed to a "forward feeding topology" -version later to be described with reference to Fig. 7. This is because the incident light, as illustrated by means of the incident light arrows 12, enters the resonator cavity layer 5 via the second face 7 and not via the first face 4 where the graphene light absorbent layer is located. Hence, the light is reflected by the graphene light absorbent layer 3 and the light scattering unit 6 receives the reflected light - as indicated by the light arrows 16 in a reversed or "backwards direction". The "backward feeding topology" -version of the graphene optoelectronic sensor 1 as shown in Fig. 1 is favourable in that this topology eliminates the need for longer read-out terminals 8, which saves expensive material cost.
In both the forward and backward feeding topology versions, the optical resonator cavity layer 5 forces the incident light to bounce inside the resonator cavity provided by the optical resonator cavity layer 5 and every time the trapped light impinges the graphene light absorbent layer 3, 2.3% of its power is absorbed by the graphene. It does not matter on which surface of the optical resonator cavity layer 5 the graphene is applied. In both embodiments, the silicon (or a material with similar refractive index) in the optical resonator cavity layer 5 constitutes the actual resonator and not the graphene itself as in previously known optoelectronic sensors based on graphene. Hence the invention introduces the use of graphene as a light absorbent layer 3 which - when applied directly to an optical resonator layer 5 as described, results in a high external quantum efficiency of between 65- 70% which is a substantial improvement over known graphene optoelectronic sensors with an external quantum efficiency below 10-15%. In Fig. 2a, a light scattering unit 6 is shaped in an exemplifying shape of a cross. The dimensions of the cross are adapted for reflecting a predefined band of wavelengths. Correspondingly, in Fig. 2b, a light scattering unit 6 is shaped in an exemplifying shape of a modified cross or "Maltese cross" configuration where the distal portions 14 are broader than the central portions 15 as shown. Another exemplifying embodiment is shown in Fig. 3, wherein a light scattering unit 6 is shaped in the form of a circular plate configuration. Another exemplifying embodiment is shown in Fig. 4, wherein a light scattering unit 6 is shaped in the form of a square fence configuration. Fig. 5 illustrates a multicolour graphene optoelectronic sensor 1 according to a further exemplifying embodiment of the invention. This multicolour graphene optoelectronic sensor 1 is provided with multiple optical resonators 2 positioned side by side on a complimentary metal-oxide semiconductor (CMOS) read-out circuit 9 as shown in the figure. In the shown embodiment, an exemplifying number of three optical resonators 2 exhibit mutually different proportions of thickness between the optical resonator cavity layer 5 and the substrate layer 10. However, the total thickness, t, of both the substrate layer 10 and the optical resonator cavity layer 5 remains the same for all three optical resonators 2 as shown in the figure and typically measures about 1 -2 pm. According to the invention, more optical resonators 2 than the three shown in Fig. 5 may be arranged on a single CMOS read-out circuit 9. A practical embodiment may for example include between four to six optical resonators 2 positioned side-by-side, for detecting four to six colours or desired wavelength bands. Separation walls 17 are located between the optical resonators 2. The separation walls 17 are preferably made of the same material as the substrate material, which in the shown example is silicon (Si). The graphene light absorbent layer 3 is etched in the manufacturing process so that gaps 18 are formed between neighbouring optical resonators 2, enabling individual wavelength detection read-out from each optical resonator 2. Just like in the previously described embodiment, this embodiment may have an anti-reflective coating layer 13 applied on the substrate layer 10.
Fig. 6 shows a graph of a selection of infrared target wavelength bands that may be detected by the graphene optoelectronic sensor 2. The wavelength, λ, in pm on the horizontal axis is here plotted against the transmittance, Tr, in % on the vertical axis.
An alternative embodiment of the graphene optoelectronic sensor 1 according to the invention is shown in Fig. 7. This embodiment may be referred to as a "forward feeding topology" -version of the graphene optoelectronic sensor 1 , as opposed to the "backward feeding topology" -version described initially with reference to Fig. 1 . Indeed, the embodiments shown in Figs. 5 and 7 are also of the "backward feeding topology" -version. Thus, in the "forward feeding topology" version shown in Fig. 7, the incident light, as illustrated by means of the incident light arrows 12, enters the resonator cavity layer 5 via the first face 4 where the graphene light absorbent layer is located. Hence, the light is here reflected by the light scattering unit 6 directly from a "forward direction". In this embodiment the graphene optoelectronic sensor 1 has been manufactured by means of a method wherein the substrate layer 10 is grown directly onto the complimentary metal-oxide semiconductor (CMOS) read-out circuit 9. The resonator layer 5 is then applied on the substrate layer 10 and is then topped by the graphene light absorbent layer 3 and an anti-reflective coating layer 13, facing the incident light as illustrated by the incident light arrows 12. In this alternative embodiment, the read-out terminals 8 are longer than in the previous embodiments as they have to reach the now more distant graphene light absorbent layer 3. The read-out terminals are separated by separation walls 17 preferably made of the same material as in the substrate layer 10, like for example silicon oxide (S1O2).
Fig. 8 shows an alternative arrangement of multiple light scattering units 6. Here, the light scattering units 6 are arranged in an array 19. Fig. 9 shows a partial schematic view cross-sectional view of a graphene optoelectronic sensor 1 , in which the light scattering unit 6 is embedded within the substrate layer 10 at a small distance, d, from the optical resonator cavity layer 5. Preferably, the distance, d, may be anywhere on the range of 0 to 1/10 of a desired detection wavelength, whereas the height, H, of the resonator layer 5 may typically be ¼ of said desired wavelength. Fig. 10 finally shows a similar embodiment wherein the light scattering unit 6 is positioned within the substrate layer 10 but flush with the second face 7 of the resonator layer 5. Hence, in this embodiment, the distance, d, illustrated in Fig. 9 is zero.
Fig. 1 1 shows a detailed view of the first face of the resonator cavity layer 4 consisting of a graphene light absorbent layer 3. The graphene light absorbent layer 3 is located on and in contact with the CMOS read-out circuit extending between and in contact with the read-out terminals 8 in order to absorb the incident light arrows passing through the wavelength-selective light scattering unit 6. However, even though the first face of the resonator cavity layer 4 may only comprise a graphene layer 3 could it also comprise a metal layer 20 and a first semiconductor layer 21 a, possibly also a second semiconductor layer 21 b, in order to form an absorber stack 22 a-c as shown in Figs. 12A-C.
In Fig. 12A comprises the absorber stack 22a the graphene light absorbent layer 3 on top of the first semiconductor layer 21 a which is sandwiched between the graphene light absorbent layer and the metal layer 20. The graphene light absorbent layer 3 stretches all the way between the read-out terminals 8 while the first semiconductor layer 21 a and the metal layer 20 are spaced apart from the read-out terminals 8.
In Fig. 12B comprises the absorber stack 22b a graphene light absorbent layer 3 which is sandwiched between the first semiconductor layer 21 a on top and the metal layer 20 beneath. In this embodiment, the graphene light absorbent layer 3 and the metal layer 20 are in contact with the first one of the read-out terminals 8a and spaced apart from the other read out terminal 8b while the first semiconductor layer 21 a on top of the graphene light absorbent layer 3 is spaced apart from the first one of the read-out terminals 8a and spaced apart from the other one 8b. Fig. 12C differs from figure 12B in that it comprises a further second semiconductor layer 21 b in the absorber stack 22c sandwiched between the first semiconductor layer 21 a on top and the graphene light absorbent layer 3 beneath. In this embodiment, the graphene light absorbent layer 3 and the metal layer 20 are in contact with the first one of the read-out terminals 8a and spaced apart from the other read out terminal 8b while the first semiconductor layer 21 a on top of the graphene light absorbent layer 3 is spaced apart from the first one of the read-out terminals 8a and spaced apart from the other one 8b.
In these configurations of the absorber stacks 22 a-c, the metal layer can be one selected from Ag, Au, Al and Cu. Semiconductor 1 may be a typical semiconductor such as Si, Ge and CuO and semiconductor 2 could be a wide- bandgap semiconductor such as ΤΊ02, NiO, Cr203 and Cu20. The metal layer helps to have a better reflection and avoids light to penetrate into the readout circuit while the semiconductor can enhance absorption.
The embodiments in figures 12B respectively 12C have a design and configuration in which the graphene light absorbent layer 3 in the absorber stack 22b respectively 22c forms a barrier which block dark currents. It is to be understood that the present invention is not limited to the exemplifying embodiments described above and illustrated in the drawings and a skilled person will recognize that many changes and modifications may be made within the scope of the appended claims. LIST OF REFERENCE NUMERALS USED IN THE DESCRIPTION AND IN THE ACCOMPANYING DRAWINGS:
1 . Graphene optoelectronic sensor
2. Optical resonator
3. Graphene light absorbent layer
4. First face of resonator cavity layer
5. Optical resonator cavity layer
6. Wavelength-selective light scattering unit
7. Opposite second face of resonator cavity layer
8. Read-out terminals
9. CMOS Read-out circuit
10. Substrate layer
1 1 . Dielectric interstitial walls between superimposed light scattering units
12. Incident light arrows
13. Anti-reflective coating layer
14. Distal portions of light scattering unit
15. Central portions of light scattering units
16. Reflected light arrows
17. Separation walls between multiple optical sensors
18. Etched gaps in the graphene light absorbent layer between optical resonators
19. Array of light scattering units
20. Metal layer
21 . Semiconductor layer
22. Absorber stack
t: Total thickness of both the substrate layer and optical resonator cavity layer d: Distance between light scattering unit and optical resonator cavity layer if the light scattering unit is embedded in the substrate layer.
H: Height of resonator layer
λ: Wavelength of incident light in pm
Tr: Transmittance in %

Claims

1 . A graphene optoelectronic sensor (1 ) including one or more optical resonators (2) for detecting discrete light wavelength bands, characterized in:
- that a graphene light absorbent layer (3) is directly applied on a first face of an optical resonator cavity layer (5), said optical resonator cavity layer (5) consisting of a material having a refractive index at or above 2, and
- that a wavelength-selective light scattering unit (6) is located on or adjacent to an opposite second face (7) of each optical resonator cavity layer (5).
2. A graphene optoelectronic sensor (1 ) according to any one of the preceding claims, characterized in that read-out terminals (8) extend from the graphene light absorbent layer (3) to a complimentary metal-oxide semiconductor (CMOS) read-out circuit (9).
3. A graphene optoelectronic sensor (1 ) according to claim 1 or 2, characterized in that a substrate layer (10) is applied to said second face (7) of each resonator cavity layer (5), said substrate layer (10) consisting of a material with a refractive index at or below 1.5.
4. A graphene optoelectronic sensor (1 ) according to claim 3, characterized in that the substrate layer (10) includes silicon dioxide (S1O2).
5. A graphene optoelectronic sensor (1 ) according to any one of the preceding claims, characterized in that the optical resonator cavity layer consists of silicon
(Si).
6. A graphene optoelectronic sensor (1 ) according to any one of the preceding claims, characterized in that the optical resonators (2) are arranged for detecting a selection of infrared wavelength bands.
7. A graphene optoelectronic sensor (1 ) according to any one of the preceding claims, characterized in that it is directly applied to a complementary metal-oxide semiconductor (CMOS) read-out circuit (9).
8. A graphene optoelectronic sensor (1 ) according to any one of the preceding claims, characterized in that multiple light scattering units (6), each adapted for unique infrared bands, are superimposed on each other with dielectric interstitial dielectric (1 1 ).
9. A graphene optoelectronic sensor (1 ) according to any one of the preceding claims, characterized in that multiple light scattering units (6) are arranged in an array.
10. A graphene optoelectronic sensor (1 ) according to any one of the preceding claims, characterized in that the optical resonators (2) for detecting different wavelength bands exhibit mutually different proportions of thickness between the optical resonator cavity layer (5) and the substrate layer (10), the total thickness (T) of both the substrate layer (10) and the optical resonator cavity layer (5) being the same for all optical resonators (2) of the graphene optoelectronic sensor (1 ).
1 1 . Method for manufacturing a graphene optoelectronic sensor (1 ) according to any one of the preceding claims, characterized in the step of growing the graphene light absorbent layer (3) directly onto a complimentary metal-oxide semiconductor (CMOS) read-out circuit (9).
12. Method for manufacturing a graphene optoelectronic sensor (1 ) according to any one of the claims 1 -10, characterized in the step of growing the substrate layer (10) directly onto a complimentary metal-oxide semiconductor (CMOS) readout circuit (9).
13. A graphene optoelectronic sensor (1 ) according to any one of the preceding claims, characterized in that the graphene light absorbent layer (3) at the first face of the resonator cavity layer (4) forms part of an absorber stack (22a-c) also comprising one or several metal layers (20) and/or one or several semiconductor layer (21 a-b).
PCT/SE2018/050012 2017-01-10 2018-01-09 A graphene optoelectronic sensor WO2018132055A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE1750011-7 2017-01-10
SE1750011A SE540220C2 (en) 2017-01-10 2017-01-10 A Graphene Optoelectronic Sensor

Publications (1)

Publication Number Publication Date
WO2018132055A1 true WO2018132055A1 (en) 2018-07-19

Family

ID=62839846

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SE2018/050012 WO2018132055A1 (en) 2017-01-10 2018-01-09 A graphene optoelectronic sensor

Country Status (2)

Country Link
SE (1) SE540220C2 (en)
WO (1) WO2018132055A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114659625A (en) * 2022-03-17 2022-06-24 电子科技大学 Performance-adjustable bolometer based on graphene mechanical vibrator and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130032782A1 (en) * 2011-08-02 2013-02-07 Konstantatos Gerasimos Optoelectronic platform with carbon based conductor and quantum dots and transistor comprising such a platform
US8610989B2 (en) * 2011-10-31 2013-12-17 International Business Machines Corporation Optoelectronic device employing a microcavity including a two-dimensional carbon lattice structure
US20160161675A1 (en) * 2012-03-30 2016-06-09 The Trustees Of Columbia University In The City Of New York Graphene Photonics For Resonator-Enhanced Electro-Optic Devices And All-Optical Interactions

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130032782A1 (en) * 2011-08-02 2013-02-07 Konstantatos Gerasimos Optoelectronic platform with carbon based conductor and quantum dots and transistor comprising such a platform
US8610989B2 (en) * 2011-10-31 2013-12-17 International Business Machines Corporation Optoelectronic device employing a microcavity including a two-dimensional carbon lattice structure
US20160161675A1 (en) * 2012-03-30 2016-06-09 The Trustees Of Columbia University In The City Of New York Graphene Photonics For Resonator-Enhanced Electro-Optic Devices And All-Optical Interactions

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
K.-W. LAI ET AL.: "Selecting detection wavelength of resonant cavity-enhanced photodetectors by guided-mode resonance reflectors", OPTICS EXPRESS, vol. 20, 2012, pages 3572 - 3579, XP055510185 *
M. FURCHI ET AL.: "Microcavity-Integrated Graphene Photodetector", NANO LETTERS, vol. 12, 2012, pages 2773 - 2777, XP055427968, DOI: doi:10.1021/nl204512x *
W. WEI ET AL.: "Cavity-enhanced continuous graphene plasmonic resonator for infrared sensing", OPTICS COMMUNICATIONS, vol. 395, 22 June 2016 (2016-06-22), pages 147 - 153, XP085001828 *
X. GAN ET AL.: "Strong Enhancement of Light-Matter Interaction in Graphene Coupled to a Photonic Crystal Nanocavity", NANO LETTERS, vol. 12, 2012, pages 5626 - 5631, XP055510175 *
X. HU ET AL.: "Design of midinfrared photodetectors enhanced by resonant cavities with subwavelength metallic gratings", APPLIED PHYSICS LETTERS, vol. 93, 2008, pages 241108, XP012112847 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114659625A (en) * 2022-03-17 2022-06-24 电子科技大学 Performance-adjustable bolometer based on graphene mechanical vibrator and preparation method thereof
CN114659625B (en) * 2022-03-17 2023-04-25 电子科技大学 Performance-adjustable bolometer based on graphene mechanical vibrator and preparation method

Also Published As

Publication number Publication date
SE1750011A1 (en) 2018-05-02
SE540220C2 (en) 2018-05-02

Similar Documents

Publication Publication Date Title
US9157789B2 (en) Electromagnetic wave detector and electromagnetic wave detector array
JP4723860B2 (en) CMOS image sensor
JP4840451B2 (en) Near infrared image sensor
TW201244068A (en) Vertically structured passive pixel arrays and methods for fabricating the same
TW200818893A (en) Method and apparatus providing imager pixel array with grating structure and imager device containing the same
JP2000150927A (en) Multiband infrared detector
JP2015532725A (en) Optical device, optical filter manufacturing method, image forming apparatus, and manufacturing method thereof
US8766159B2 (en) Multicolor detectors and applications thereof
US6580089B2 (en) Multi-quantum-well infrared sensor array in spatially-separated multi-band configuration
WO2014209421A1 (en) Shallow trench textured regions and associated methods
US9331125B2 (en) Solid-state imaging device using plasmon resonator filter
JP2008071908A (en) Superconductive photodetector
JP5853454B2 (en) Infrared detector and method of manufacturing infrared detector
JP5785698B2 (en) Light detection element
JP2008060323A (en) Solid-state imaging apparatus, manufacturing method therefor, and camera
WO2018132055A1 (en) A graphene optoelectronic sensor
JP2005347599A (en) Color photo detector and imaging device
JP2002009328A (en) Photosensitive element array and its manufacturing method
KR20190041952A (en) Photodetector with helmholtz resonator
CN107946336A (en) Imaging sensor and forming method thereof
EP3761377B1 (en) Meta-surface photodetector
JP2014110391A (en) Light-receiving element array, manufacturing method of the same and sensing device
KR101515119B1 (en) Photodetector and manufacturing method thereof
EP4170733A1 (en) Photodiode and electronic device including the same
KR102368900B1 (en) Multi-color photo detector and method for fabricating the same by integrating with read-out circuit

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18738898

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18738898

Country of ref document: EP

Kind code of ref document: A1