CN107946336A - Imaging sensor and forming method thereof - Google Patents
Imaging sensor and forming method thereof Download PDFInfo
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- CN107946336A CN107946336A CN201711422876.5A CN201711422876A CN107946336A CN 107946336 A CN107946336 A CN 107946336A CN 201711422876 A CN201711422876 A CN 201711422876A CN 107946336 A CN107946336 A CN 107946336A
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000003384 imaging method Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims abstract description 117
- 238000000926 separation method Methods 0.000 claims abstract description 26
- 230000001154 acute effect Effects 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 230000004888 barrier function Effects 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 18
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- 230000015572 biosynthetic process Effects 0.000 description 7
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- 239000004411 aluminium Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 230000005611 electricity Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Abstract
A kind of image sensor and forming method thereof, wherein, the forming method of the image sensor includes：Initial substrate is provided；Part initial substrate is removed, forms substrate, the base top has some first openings, and the top dimension of first opening is more than bottom size, and the side wall of the plane where first open top and the first opening forms acute angle；Separation layer is formed in the base top and the first opening, the separation layer is full of the first opening；Filter and the lens positioned at filter surface are formed in the top surface of the separation layer.The method substrate is more to the uptake of photon, and the image sensor formed is higher to the susceptibility of light.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of imaging sensor and forming method thereof.
Background technology
Imaging sensor is the semiconductor devices that optical image signal is converted to electric signal.(complementary metal aoxidizes CMOS
Thing semiconductor) imaging sensor is a kind of fast-developing solid state image sensor, due to the image in cmos image sensor
Sensor section and control circuit part are integrated in same chip, therefore the small, low in energy consumption of cmos image sensor, valency
Lattice are cheap, have more advantage compared to traditional CCD (Charged Couple) imaging sensor, are also more easy to popularize.
Existing cmos image sensor includes being used for the photoelectric sensor for converting optical signals to electric signal, the light
Electric transducer is the photodiode being formed in silicon substrate.In addition, in the also shape of the surface of silicon formed with photodiode
Into there is dielectric layer, the dielectric layer is interior formed with metal interconnection layer, and the metal interconnection layer is used to make photodiode and periphery
Circuit is electrically connected.
However, the efficiency of light absorption of prior art cmos image sensor is relatively low.
The content of the invention
Present invention solves the technical problem that it is a kind of image sensor and forming method thereof, to improve efficiency of light absorption.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of forming method of image sensor, including：There is provided
Initial substrate；Part initial substrate is removed, forms substrate, the base top has the first opening, the top of first opening
Portion's size is more than bottom size, and the side wall of the plane where first open top and the first opening forms acute angle；Institute
State and separation layer is formed in base top and the first opening, the separation layer is full of the first opening；At the top of the separation layer
Surface forms filter and the lens positioned at filter surface.
Optionally, the forming step of the substrate includes：The first mask layer is formed in the initial substrate surface, described the
One mask layer exposes the surface of part initial substrate；Using first mask layer as mask, the initial substrate is etched, is formed
Substrate, the base top have the first opening.
Optionally, the material of the initial substrate includes silicon；Using first mask layer as mask, the just primordium is etched
The technique at bottom includes：One or two kinds of combination in wet-etching technology and dry etch process.
Optionally, the parameter of the wet-etching technology includes：Etching agent includes tetramethylammonium hydroxide, the etching agent
Mass fraction be 10%~30%.
Optionally, the side wall of first opening has opposite a first side wall and second sidewall, the first side wall with
Second sidewall form angle be：70.5 degree.
Optionally, the crystal orientation of the initial substrate top surface is<100>；The crystal orientation on the first opening sidewalls surface is
<111>。
Optionally, the material of the separation layer includes silica；The filter includes：Red color filter, green filter
Look mirror or blue color filter, the substrate include some sensing units, the red color filter, green color filter and blue color
Mirror is respectively in different sensing units, and only have a kind of filter of color in each sensing unit.
Optionally, there is metal grate between adjacent filter；The material of the metal grate is metal.
Optionally, the substrate includes some sensing units, has some first openings, and some first in the sensing unit
There is photodiode in the substrate of open bottom.
The present invention also provides a kind of image sensor, including：Substrate, the top of the substrate has the first opening, described
The top dimension of first opening is less than bottom size；Positioned at the base top and first opening in separation layer, it is described every
Absciss layer is full of the first opening；Positioned at the filter of the insulation surface；Lens positioned at the filter surface.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that：
In the forming method for the image sensor that technical solution of the present invention provides, the top of part initial substrate, shape are removed
Into substrate.The top of the substrate has some first openings, since the top dimension of the first opening is more than bottom size, and institute
Plane where stating the first opening forms acute angle with the first opening sidewalls so that incident ray passes through when entering the side wall of the first opening
Multiple reflections are crossed, then more into intrabasement light, electricity conversion is higher, sensitivity of the imaging sensor formed to light
Degree is higher.
Brief description of the drawings
Fig. 1 is a kind of structure diagram of cmos image sensor；
Fig. 2 to Fig. 7 is the structure diagram of each step of one embodiment of forming method of imaging sensor of the present invention.
Embodiment
As described in background, the efficiency of light absorption of cmos image sensor is relatively low.
Fig. 1 is a kind of structure diagram of cmos image sensor.
Please refer to Fig.1, substrate 100；Filter 101 positioned at 100 surface of substrate；Positioned at 101 surface of filter
Lens 102.
In above-mentioned cmos image sensor, 100 top surface of substrate is smooth, and the crystal orientation of 100 top surface of substrate is<
100>So that the light and the contact area on 100 surface of substrate are smaller, then reflectivity of the light along 100 surface of substrate
It is higher so that the amount of the photon absorbed by substrate 100 is less, and the amount of photoelectric conversion is also less.
To solve the technical problem, the present invention provides a kind of forming method of imaging sensor, including：There is provided initial
Substrate；Part initial substrate is removed, forms substrate, the base top has the first opening, the top ruler of first opening
It is very little to be more than bottom size, and the side wall of the plane where first open top and the first opening forms acute angle.The method
Substrate is more to the uptake of photon, and the image sensor formed is higher to the susceptibility of light.
It is understandable to enable above-mentioned purpose, feature and the beneficial effect of the present invention to become apparent, below in conjunction with the accompanying drawings to this
The specific embodiment of invention is described in detail.
Fig. 2 to Fig. 7 is the structure diagram of each step of one embodiment of forming method of imaging sensor of the present invention.
Please refer to Fig.2, there is provided initial substrate 200, the initial substrate 200 include sensing unit A.
The forming method of the initial substrate 200 includes：Semiconductor substrate (not shown) is provided；In the Semiconductor substrate
Interior formation sensor layer (not shown), the sensor layer is along parallel to including some biographies on semiconductor substrate surface direction
Sensillary area A, the sensing unit A sensor layers are interior to have the photodiode 250；After sensor layer is formed, in semiconductor
The first surface of substrate forms dielectric layer, has electric interconnection structure in the dielectric layer；Formed and supported in the dielectric layer surface
Substrate；After the support substrate is formed, the Semiconductor substrate is subtracted from the second surface of the Semiconductor substrate
Thin, untill sensor layer is exposed, the second surface is opposite with first surface.
In the present embodiment, the Semiconductor substrate is silicon substrate.
In other embodiments, the Semiconductor substrate is including on germanium substrate, silicon carbide substrates, germanium silicon substrate, insulator
Silicon substrate, germanium substrate on insulator, the Semiconductor substrate are interior doped with p-type or N-type ion.
In the present embodiment, the imaging sensor formed is back-illuminated cmos image sensors, therefore the sensor
Layer is formed by Semiconductor substrate.
In the present embodiment, the Semiconductor substrate is silicon substrate, and doped with P type trap zone in the silicon substrate, it is described
The forming step of sensor layer includes：N-type ion implanting is carried out to the first surface of the Semiconductor substrate, in the semiconductor
Some n-type doping areas are formed in the first surface of substrate, the n-type doping area forms initial sensor floor with P type trap zone, described
The first surface of initial sensor layer is the first surface of Semiconductor substrate, and the initial sensor layer also has and the first table
The opposite second surface in face；Support substrate is formed in the first surface of the initial sensor layer；Formed the support substrate it
Afterwards, the second surface of the initial sensor layer is carried out polishing processing, until exposing n-type doping area, forms sensor layer.
In other embodiments, when the silicon substrate is eigenstate, from the first surface ion implanting p-type of the silicon substrate
Ion, to form P type trap zone in the first surface of silicon substrate；N-type ion implanting is carried out to the first surface of the silicon substrate,
Some n-type doping areas are formed in the P type trap zone, the n-type doping area forms initial sensor floor with P type trap zone, described
The first surface of initial sensor layer is the first surface of Semiconductor substrate, and the initial sensor layer also has and the first table
The opposite second surface in face；The substrate is formed in the first surface of the initial sensor layer；Formed after the substrate, it is right
The second surface of the initial sensor layer carries out polishing processing, until exposing n-type doping area, forms sensor layer.
Initial sensor layer is used to be subsequently formed sensor layer.
To the second surface of the initial sensor layer polish the technique of processing includes：Chemical mechanical milling tech.
A photodiode 250 is formed between the P type trap zone and a n-type doping area, is wrapped in the sensor layer
Containing several n-type doping areas, therefore, the sensor layer 201 includes some photodiodes 250.
Please refer to Fig.3, remove the part initial substrate 200, form substrate 201, if the top of the substrate 201 has
Dry first opening 202, the top dimension of first opening 202 are more than bottom size, and where 202 top of the first opening
Horizontal plane X and first opening 202 side wall form sharp angle α.
The forming step of the opening of substrate 201 and first 202 includes：First is formed on 200 surface of initial substrate
Mask layer, first mask layer expose the top surface of part initial substrate 200；Using first mask layer as mask,
The initial substrate 200 is etched, substrate 201 is formed, there is the described first opening 202 in the substrate 201.
The material of first mask layer includes：Silicon nitride or titanium nitride.First mask layer is used to form substrate
201 and first opening 202 mask.
Using first mask layer as mask, the technique of initial substrate 200 includes described in etched portions：Dry etch process
With one or two kinds of combination in wet-etching technology.
In the present embodiment, using first mask layer as mask, the technique of initial substrate 200 described in etched portions is wet
Method etching technics, the parameter of the wet-etching technology include：Etching agent is tetramethylammonium hydroxide, the quality of the etching agent
Fraction is：10%~30%.
In other embodiments, the technique for removing the part initial substrate is wet-etching technology, the wet etching
Etching agent be sodium hydroxide.
In the present embodiment, the first 202 top dimensions of opening formed using wet-etching technology are more than bottom size
Principle includes：The material of the initial substrate 200 is silicon, and the crystal orientation of 200 top surface of initial substrate is<100>.Due to
Silicon<100>The covalent bond density in face is more than silicon<111>The covalent bond density in face so that etching agent is to silicon<100>The etching speed in face
Rate is more than to silicon<111>The etch rate in face so that the top dimension of the first opening 202 formed is more than bottom size, and
202 side walls of opening of horizontal plane X and first where first opening, 202 top form sharp angle α.And (the silicon<111>Face
Photoelectric conversion efficiency is higher than silicon<100>Face) electricity conversion, be conducive to improve image sensor performance.
The top dimension of first opening 202 is more than bottom size, and the plane where 202 top of the first opening
202 side walls of opening of X and first form sharp angle α so that it is repeatedly anti-that incident ray is radiated at generation on the side wall of the first opening 202
Penetrate, then more into the light of substrate 201, electricity conversion is higher, the better performances of the image sensor formed.
It is described first opening 202 side walls crystal orientation be<111>, it is described first opening 202 side wall include opposite first
Side wall 11 and second sidewall 12.The number of degrees that the first side wall 1 and second sidewall 2 form angle are：70.5 degree.
The meaning of the number of degrees of the first side wall 1 and the composition angle of second sidewall 2 is selected to be：1 He of the first side wall
It is 70.5 degree that second sidewall 2, which forms angle, so that light unanimously to the first 202 internal reflections of opening, is conducive to the absorption of photon, because
This, is conducive to improve imaging sensor efficiency of light absorption.
Formed after the opening of substrate 201 and first 202, remove first mask layer.Remove first mask
The technique of layer includes：One or two kinds of combination in dry etch process and wet-etching technology.
Please refer to Fig.4, remove the part substrate 201, form the second opening (not marked in figure)；In the described second opening
Interior formation barrier layer 203；In the top of the substrate 201, the side wall on barrier layer 203 and top surface and the first opening 202
Separation layer 204 is formed in (see Fig. 4).
Removing the technique of the part substrate 201 includes：One kind in dry etch process and wet-etching technology or
Two kinds of combinations.
The forming step on the barrier layer 203 includes：Described first opening 202 and second opening in and substrate 201
Top surface formed barrier film, the barrier film full of first opening 202 and second opening；Formed in the stop film surface
Second mask layer, second mask layer expose the barrier film on 202 surface of the first opening；Using second mask layer to cover
Film, etches the barrier film, until exposing the surface of substrate 201, barrier layer 203 is formed in the described second opening.
The formation process of the barrier film includes：Chemical vapor deposition method or physical gas-phase deposition.
Using second mask layer as mask, etching the technique of the barrier film includes：Dry etch process and wet method are carved
One or two kinds of combination in etching technique.
Crosstalk occurs for the light induced electron that the barrier layer 203 is used to prevent from producing in monocrystalline silicon..
The material of the separation layer 204 includes silica.
The formation process of the separation layer 204 includes：Chemical vapor deposition method or physical gas-phase deposition.
The separation layer 204 is used for realization the electric isolution of substrate 201 and follow-up filter, and ensures 201 surface of substrate
It is clean.
Fig. 5 is refer to, removes the separation layer 204 of 203 surface portion of barrier layer；Gold is formed on 203 surface of barrier layer
Belong to grid 205；204 surface of separation layer of sensing unit A forms filter 206, the filter between the adjacent metal grate 205
Look mirror 206 covers the side wall of metal grate 205.
In the present embodiment, the forming step of the metal grate 205 includes：On the separation layer 204 and barrier layer 203
Surface form metal grate film, there is the 3rd mask layer on the metal grate film, the 3rd mask layer exposes adjacent
The top surface of metal grate film between barrier layer 203；Using the 3rd mask layer as mask, the metal grate is etched
Film, until exposing the top surface of separation layer 204, forms metal grate 205.
The material of the metal grate film is metal, correspondingly, the material of the metal grate 205 is metal.In this reality
Apply in example, the material of the metal grate film is aluminium, correspondingly, the material of the metal grate 205 is aluminium.In other embodiment
In, the material of the metal grate film is aluminium, and doped with a small amount of copper in the aluminium, correspondingly, the material of the metal grate
For the combination of aluminium and copper.
In the present embodiment, the formation process of the metal grate film is physical gas-phase deposition.In other embodiment
In, the formation process of the metal grate film is chemical vapor deposition method.
3rd mask layer is used for figure and the position for defining metal grate 205.
3rd mask layer exposes the surface of the metal grate film of sensing unit A between adjacent barrier layer 203, then subsequently
Sensing unit A separation layer 204 surface of the metal grate 205 of formation between adjacent barrier layer 203, the then metal gate formed
Lattice 205 take full advantage of the area of space between adjacent barrier layer 203, will not expand the size of formed imaging sensor
Greatly.
The effect of the metal grate 205 includes：On the one hand, the metal grate 205 can realize the reflection of incident light；
On the other hand, the metal grate 205 can stop that incident light enters in adjacent filter from a filter, make the incidence
Light can return to corresponding 201 surface of substrate of filter at place, while crosstalk is avoided, can avoid quantum loss, with
Improve photoelectric conversion efficiency.
The filter 206 includes red color filter 206a, green color filter 206b and blue color filter 206c, described
Red color filter 206a, colour filter filter 206b and blue color filter 206c are respectively in different sensing unit A and each
204 surface of zone isolation layer only forms a kind of filter 206 of color, then can be by one into the light of the filter 206
206 colour filter of filter of kind color, then the incident light for being irradiated to 201 surface of substrate is monochromatic light.
Due to having metal grate 205 between adjacent filter 206, the metal grate 205 can fully stop incidence
Light enters in adjacent filter 206 from a filter 206, to avoid crosstalk occurs.
Fig. 6 is refer to, lens 207 are formed on 206 surface of filter.
The lens 207 are used to focus on light, enable to be irradiated to the lens 207 by the incident light of a lens 207
Corresponding 201 surface of substrate.
Fig. 7 is the enlarged drawing in region 1 in Fig. 6.
First opening 202 includes opposite the first side wall 11 and second sidewall 12, is passed through with the light B follow-up saturating
The focusing of mirror, is radiated on the first side wall 11 through filter and illustrates.
Specifically, the light B is radiated at the first side wall 11 of the first opening 202, partial photonic is by the first opening 202
The first side wall 11 absorbs, meanwhile, some light B carries out first reflection, and is reflected in the second sidewall 12 of the first opening 202
On, partial photonic is absorbed by the second sidewall 12 of the first opening 202 again, at the same time, due to the top dimension of the first opening 202
Less than bottom size, some light B is radiated at the first side wall 11 of the first opening 202 again again, and partial photonic is again by
One side wall 11 absorbs so that the photon amount absorbed by substrate 201 is more, then the efficiency of photoelectric conversion is higher, the figure formed
The better performances of sensor.
Correspondingly, Fig. 6 is refer to, the present invention also provides a kind of image sensor, including：Substrate 201, the substrate 201
Top there is the first opening, the top dimension of first opening is less than bottom size, and first open bottom place
Plane and the first opening sidewalls form acute angle；Separation layer 204 in the top of substrate 201 and the first opening, institute
Separation layer 204 is stated full of the first opening；Filter 206 positioned at 204 surface of separation layer；Positioned at 206 table of filter
The lens 207 in face.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, are not departing from this
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the scope of restriction.
Claims (10)
- A kind of 1. forming method of imaging sensor, it is characterised in that including：Initial substrate is provided；Part initial substrate is removed, forms substrate, the base top has some first openings, the top of first opening Size is more than bottom size, and the side wall of the plane where first open top and the first opening forms acute angle；Separation layer is formed in the base top and the first opening, the separation layer is full of the first opening；Filter and the lens positioned at filter surface are formed in the top surface of the separation layer.
- 2. the forming method of imaging sensor as claimed in claim 1, it is characterised in that the forming step bag of the substrate Include：The first mask layer is formed in the initial substrate surface, first mask layer exposes the surface of part initial substrate；With First mask layer is mask, etches the initial substrate, forms substrate, and the base top has the first opening.
- 3. the forming method of imaging sensor as claimed in claim 2, it is characterised in that the material of the initial substrate includes Silicon；Using first mask layer as mask, etching the technique of the initial substrate includes：One or two kinds of combination in wet-etching technology and dry etch process.
- 4. the forming method of imaging sensor as claimed in claim 3, it is characterised in that the parameter of the wet-etching technology Including：Etching agent includes tetramethylammonium hydroxide, and the mass fraction of the etching agent is 10%~30%.
- 5. the forming method of imaging sensor as claimed in claim 1, it is characterised in that the side wall of first opening has Opposite the first side wall and second sidewall, the angle that the first side wall and second sidewall are formed are：70.5 degree.
- 6. the forming method of imaging sensor as claimed in claim 1, it is characterised in that the initial substrate top surface Crystal orientation is<100>；The crystal orientation on the first opening sidewalls surface is<111>.
- 7. the forming method of imaging sensor as claimed in claim 1, it is characterised in that the material of the separation layer includes two Silica；The filter includes：Red color filter, green color filter or blue color filter, the substrate include some biographies Sensillary area, the red color filter green color filter and blue color filter are respectively in different sensing units, and each is sensed There is a kind of filter of color in area.
- 8. the forming method of imaging sensor as claimed in claim 1, it is characterised in that there is metal between adjacent filter Grid；The material of the metal grate is metal.
- 9. the forming method of imaging sensor as claimed in claim 1, it is characterised in that the substrate includes some sensings Area, has some first openings in the sensing unit, and has photodiode in the substrate of some first open bottoms.
- A kind of 10. image sensor, it is characterised in that including：Substrate, the top of the substrate have the first opening, and the top dimension of first opening is less than bottom size, and described Plane where first open bottom forms acute angle with the first opening sidewalls；Separation layer in the base top and the first opening, the separation layer is full of the first opening；Positioned at the filter of the insulation surface；Lens positioned at the filter surface.
Priority Applications (1)
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