CN108428711A - Imaging sensor and forming method thereof - Google Patents
Imaging sensor and forming method thereof Download PDFInfo
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- CN108428711A CN108428711A CN201810381052.6A CN201810381052A CN108428711A CN 108428711 A CN108428711 A CN 108428711A CN 201810381052 A CN201810381052 A CN 201810381052A CN 108428711 A CN108428711 A CN 108428711A
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- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000003384 imaging method Methods 0.000 title claims abstract description 35
- 230000004888 barrier function Effects 0.000 claims abstract description 103
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000001154 acute effect Effects 0.000 claims abstract description 12
- 150000002500 ions Chemical class 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 16
- 230000005622 photoelectricity Effects 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 4
- 239000013039 cover film Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 36
- 238000002955 isolation Methods 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- -1 boron ion Chemical class 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910001439 antimony ion Inorganic materials 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910000167 hafnon Inorganic materials 0.000 description 1
- 229910001449 indium ion Inorganic materials 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 125000006239 protecting group Chemical group 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Abstract
A kind of imaging sensor and forming method thereof, wherein forming method includes：Substrate is provided, the substrate includes several pixel regions being separated from each other；Substrate surface between adjacent pixel area forms barrier structure, and the bottom size of the barrier structure is more than top dimension, and the side wall of the barrier structure and bottom are at an acute angle；Filter, the side wall of the filter covering barrier structure are formed in the substrate surface of each pixel region.The better performances for the imaging sensor that the method is formed.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of imaging sensor and forming method thereof.
Background technology
Imaging sensor is the semiconductor devices that optical image signal is converted to electric signal.(complementary metal aoxidizes CMOS
Object semiconductor) imaging sensor is a kind of solid state image sensor of fast development, due to the image in cmos image sensor
Sensor section and control circuit part are integrated in same chip, therefore the small, low in energy consumption of cmos image sensor, valence
Lattice are cheap, have more advantage compared to traditional CCD (Charged Couple) imaging sensor, are also more easy to popularize.
Existing cmos image sensor includes the photoelectric sensor for converting optical signals to electric signal, the light
Electric transducer is the photodiode being formed in silicon substrate.In addition, in the surface of silicon for being formed with photodiode also shape
At there is dielectric layer, metal interconnection layer is formed in the dielectric layer, the metal interconnection layer is for making photodiode and periphery
Circuit is electrically connected.For above-mentioned cmos image sensor, the silicon substrate has the one side of dielectric layer and metal interconnection layer
For the front of cmos image sensor, opposite one side is the back side of cmos image sensor with front, according to light irradiation side
To difference, the cmos image sensor can be divided into preceding illuminated (Front-side Illumination, FSI) CMOS figure
As sensor and rear illuminated (Back-side Illumination) cmos image sensor.
However, the performance of existing cmos image sensor is still poor.
Invention content
Present invention solves the technical problem that being a kind of imaging sensor and forming method thereof, to improve the property of imaging sensor
Energy.
In order to solve the above technical problems, the present invention provides a kind of forming method of imaging sensor, including：Substrate is provided,
The substrate includes several pixel regions being separated from each other；Substrate surface between adjacent pixel area forms barrier structure, described
The bottom size of barrier structure is more than top dimension, and the barrier structure side wall and bottom surface are at an acute angle；In each picture
The substrate surface in plain area forms filter, the side wall of the filter covering barrier structure.
Optionally, the material of the barrier structure is metal；The metal includes tungsten or aluminium.
Optionally, the angle is ranging from：60 degree~85 degree.
Optionally, the barrier structure bottom size is：0.1 micron~0.16 micron.
Optionally, the barrier structure top dimension is：0.02 micron~0.08 micron.
Optionally, there is well region in the substrate, there are the first Doped ions in the well region；The well region of the pixel region
It is interior that there is photoelectricity doped region, there is the second Doped ions, second Doped ions and the first doping in the photoelectricity doped region
The conduction type of ion is opposite.
Optionally, it is formed before the barrier structure, the forming method further includes：It is formed and is passivated in the substrate surface
Layer；Stop-layer is formed in the passivation layer surface.
Optionally, the forming method of the barrier structure includes：Barrier structure film is formed in the stopping layer surface, it is adjacent
The barrier structure film surface between pixel region has the first mask layer；Using first mask layer as mask, described in etching
Barrier structure film forms the barrier structure until exposing the top surface of stop-layer.
Optionally, using first mask layer as mask, the technique for etching the barrier structure film includes dry etching work
One or two kinds of combination in skill and wet-etching technology.
Optionally, the filter is one in red color filter, green color filter or blue color filter；The colour filter
Mirror top dimension is more than bottom size.
Optionally, it is formed after the filter, the forming method further includes：Lens are formed on the filter surface
Structure.
Correspondingly, the present invention also provides a kind of imaging sensors, including：Substrate, the substrate include several be separated from each other
Pixel region；The bottom size of the barrier structure of substrate surface between adjacent pixel area, the barrier structure is more than top
Size, and the barrier structure side wall and bottom surface are at an acute angle；Positioned at the filter of the substrate surface of each pixel region, institute
State the side wall of filter covering barrier structure.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that：
In the forming method for the image sensor that technical solution of the present invention provides, barrier structure is toppled in order to prevent,
So that the bottom size of barrier structure is larger.Also, since barrier structure side wall and bottom are at an acute angle, the blocking junction
The top dimension of structure is less than bottom size.And the side wall of the filter covering barrier structure, therefore, the top dimension of filter
More than bottom size so that the incident light entered in pixel region is more, therefore be conducive to more converting photons has for electronics
Conducive to the quantum conversion of raising pixel region.
Further, the top dimension of the barrier structure is relatively large so that difficulty at the top of graphical barrier structure compared with
It is low.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of preceding illuminated cmos image sensor；
Fig. 2 to Fig. 7 is the structural schematic diagram of each step of one embodiment of forming method of imaging sensor of the present invention.
Specific implementation mode
As described in background, the performance of cmos image sensor is poor.
Fig. 1 is a kind of structural schematic diagram of preceding illuminated cmos image sensor.
Referring to FIG. 1, providing substrate 100, the substrate 100 includes several pixel region A being separated from each other；Positioned at substrate
The separation layer 102 on 100 surfaces；The metal grate 103 at 102 top of separation layer, the metal grate between adjacent pixel area A
103 side wall is vertical with bottom；Several filter 104 positioned at 102 top of the pixel region A separation layers, the filter 104
Cover the side wall of metal grate 103；Lens arrangement (not marked in figure) positioned at 104 top of the filter.
In above-mentioned preceding illuminated cmos image sensor, the metal grate 103 is for stopping that incident light enters adjacent filter
In Look mirror 104.When the width of the metal grate 103 is too small, then metal grate 103 and the contact area of substrate 100 are too small,
So that metal grate 103 is easily toppled over, metallic pollution is caused to subsequent technique.A kind of side for reducing metal grate 103 and toppling over
Method includes：Increase the width of metal grate 103.
However, the width of the metal grate 103 is larger so that when one timing of making space of imaging sensor, colour filter
104 top dimension of mirror is smaller, then the incident light entered in pixel region A is less, then the electronics converted is less, i.e.,：Quantum conversion is imitated
Rate is relatively low, and the performance of imaging sensor is poor.
To solve the technical problem, the present invention provides a kind of forming methods of imaging sensor, including：In adjacent picture
Substrate surface between plain area forms barrier structure, and the bottom size of the barrier structure is more than top dimension, and the blocking
The side wall of structure and bottom surface are at an acute angle；Filter, the filter covering resistance are formed in each pixel region substrate surface
Keep off the side wall of structure.The better performances for the imaging sensor that the method is formed.
It is understandable to enable above-mentioned purpose, feature and the advantageous effect of the present invention to become apparent, below in conjunction with the accompanying drawings to this
The specific embodiment of invention is described in detail.
Fig. 2 to Fig. 7 is the structural schematic diagram of each step of one embodiment of forming method of imaging sensor of the present invention.
Referring to FIG. 2, providing substrate 200, the substrate 200 includes several pixel regions I being separated from each other.
In the present embodiment, the material of the substrate 200 is silicon (Si).
In other embodiments, the material of the substrate includes germanium (Ge), SiGe (GeSi), silicon carbide (SiC), insulator
Upper silicon (SOI), germanium on insulator (GOI), GaAs or III-V compounds of group.
The pixel region I is for being subsequently formed photoelectricity doped region 201.
Also there is well region (not shown) in the substrate 200, there are the first Doped ions in the well region.The shape
Further include at method：Photoelectricity doped region 201 is formed in I well region of the pixel region, has second in the photoelectricity doped region 201
Doped ions, second Doped ions are opposite with the conduction type of the first Doped ions.
The type of the dot structure of the conduction type and imaging sensor of first Doped ions and the second Doped ions
It is related.
In the present embodiment, the type of the dot structure of imaging sensor is N-type, then the first Doped ions be p-type from
Son, second Doped ions are N-type, and the p-type ion includes：It is a kind of or more in boron ion, gallium ion and indium ion
Kind combination, the N-type ion include：One or more of phosphonium ion, arsenic ion and antimony ion combine.
In other embodiments, the type of the dot structure of imaging sensor is p-type, then the first Doped ions are N-type
Ion, second Doped ions are p-type.
The conduction type of first Doped ions and the second Doped ions on the contrary, therefore, the photoelectricity doped region 201 with
Well region forms photodiode, and the photodiode generates electronics for absorbing photon.
It is formed after the photoelectricity doped region 201, the forming method further includes：The shape in I substrate 200 of adjacent pixel area
At deep trench isolation (Deep Trench Isolation, DTI) structure 202.
The forming method of the deep trench isolation structure 202 includes：It is formed and is kept apart in I substrate 200 of adjacent pixel area
Mouthful；In isolation opening and 200 surface of substrate forms isolated material film, and the isolated material film is kept apart full of described
Mouthful；The isolated material film is planarized, until exposing the top surface of substrate 200, zanjon is formed in the isolation is open
Recess isolating structure 202.
The formation process of the isolation opening includes one or two kinds of in dry etch process and wet-etching technology
Combination.
The material of the isolated material film includes silica or high K dielectric material (K is more than 3.9), high K dielectric material packet
It includes：HfO2、La2O3、HfSiON、HfAlO2、ZrO2、Al2O3Or HfSiO4。
The deep trench isolation structure 202 is for being isolated adjacent photo doped region 201.
Referring to FIG. 3, forming passivation layer 203 in the deep trench isolation structure 202 and 200 surface of substrate；Described blunt
Change 203 surface of layer and forms stop-layer 204.
The material of the passivation layer 203 includes silica, and the formation process of the passivation layer 203 includes chemical vapor deposition
Technique or physical gas-phase deposition.
The passivation layer 203 is used for 200 surface of protecting group bottom, prevents 200 surface of substrate from being aoxidized.
The material of the stop-layer 204 includes silicon nitride or titanium nitride, and the formation process of the stop-layer 204 includes：
Chemical vapor deposition method or physical gas-phase deposition.
The stop-layer 204 is as the stop-layer for being subsequently formed barrier structure.
Referring to FIG. 4, forming barrier structure film 205, the blocking between adjacent pixel area I on 204 surface of the stop-layer
205 surface of structural membrane has the first mask layer (not shown).
The material of the barrier structure film 205 includes：Metal.In the present embodiment, the metal is tungsten.In other implementations
In example, the metal includes：Aluminium.The formation process of the barrier structure film 205 includes：Chemical vapor deposition method or physics
Gas-phase deposition.
First mask layer is used for as the mask for forming barrier structure.The material of first mask layer includes nitridation
Silicon or titanium nitride.
Referring to FIG. 5, using first mask layer as mask, the barrier structure film 205 (please referring to Fig.4) is etched, directly
To stop-layer 204 is exposed, 200 surface of substrate between adjacent pixel area I forms barrier structure 206, the barrier structure
206 bottom size is more than top dimension, and the side wall of the barrier structure 206 and bottom are at an acute angle.
The barrier structure 206 is for stopping that incident light enters in adjacent pixel region I.Also, in addition to subsequent lens
Structure can play outside the effect of optically focused incident light, and the barrier structure 206 can reduce incident light due to caused by reflection
Loss, therefore, the barrier structure 206 can play the effect of secondary condensation so that enter photodiode in photon compared with
More, then the electronics converted is more, therefore, is conducive to improve quantum conversion.
In the present embodiment, it using first mask layer as mask, etches the technique of the barrier structure film and is carved for dry method
Etching technique.In other embodiments, using first mask layer as mask, the technique for etching the barrier structure film includes：It is wet
The combination of method etching technics or wet processing and dry etch process.
In the present embodiment, the material of the barrier structure 206 is tungsten, and the parameter of the dry etch process includes：It carves
It includes fluoro-gas to lose gas, and the fluoro-gas includes NF3、CF4And SF6In one or several kinds of combinations.
In other embodiments, the material of the barrier structure includes aluminium, and the parameter of the dry etch process includes：It carves
It includes Cl to lose gas2And BCl3。
In the present embodiment, during the dry etch process, since the first mask layer internal channel depth-to-width ratio is larger,
Then etching gas easily enters in the groove so that along the etch amount being parallel in 200 surface direction of substrate to barrier structure film
It is more, then it is smaller along the size being parallel in 200 surface direction of substrate to be formed by 206 top of barrier structure.With blocking junction
The continuous etching of structure film so that the depth-to-width ratio for the groove being made of the first mask layer and barrier structure film constantly increases, then etches
The difficulty that gas enters groove is larger, i.e.,：The amount of etching gas is less in into groove, then is parallel to base to barrier structure film edge
Etch amount in 200 surface direction of bottom is less, therefore, it is larger to be formed by 206 bottom size of barrier structure.It can be seen that shape
Difficulty at the side wall barrier structure 206 at an acute angle with bottom is smaller and easily controllable.
Specifically, the acute angle is ranging from：60 degree~85 degree, select 206 side wall of the barrier structure and bottom surface
Meaning at an acute angle is：If the side wall of the barrier structure 206 and the angle of bottom surface are less than 60 degree so that barrier structure
206 top dimensions are too small so that the difficulty of image conversion barrier structure film is larger；If 206 side wall of the barrier structure and bottom
Angle is more than 85 degree so that 206 top dimension of barrier structure is excessive, then subsequently covers the colour filter vertex of 206 side wall of barrier structure
Portion is undersized so that the incident light for entering pixel region I is less, then the amount for being converted into electronics is less, i.e.,：Quantum efficiency is relatively low.
In the present embodiment, the bottom size of the barrier structure 206 is：0.1 micron~0.16 micron.Select the resistance
The meaning of gear 206 bottom size of structure is：206 bottom size of the barrier structure is unlikely to too small, on the one hand so that blocking
The blocking capability that 206 bottom of structure enters incident light in adjacent pixel area I is stronger.Also, the ruler of 206 bottom of the barrier structure
It is very little relatively large so that barrier structure 206 is not susceptible to topple over, and being conducive to, which prevents barrier structure 206 from toppling over, makes subsequent technique
At pollution.
In the present embodiment, the top dimension of the barrier structure 206 is：0.02 micron~0.08 micron.Described in selection
The meaning of 206 top dimension of barrier structure is：The size at 206 top of the barrier structure is unlikely to too small, then barrier structure
206 tops are not susceptible to topple over, and therefore, are conducive to prevent 206 top of barrier structure from toppling over the dirt caused by subsequent technique
Dye；The size at 206 top of the barrier structure is unlikely to excessive so that when one timing of making space of imaging sensor, subsequently
The size covered at the top of the filter of 206 side wall of barrier structure is larger, then the incident light for entering pixel region I is more, therefore, favorably
In raising quantum conversion.
In other embodiments, the top dimension of the barrier structure and bottom can also be other values, as long as ensureing institute
The top dimension for stating barrier structure is less than bottom size.
Referring to FIG. 6, the side wall and top surface in the barrier structure 206 form protective layer 207.
The material of the protective layer 207 includes silica, and the forming method of the protective layer 207 includes：Chemical vapor deposition
Product technique or physical gas-phase deposition.
The protective layer 207 prevents barrier structure 206 from being polluted to subsequent technique for protecting barrier structure 206.
Referring to FIG. 7, forming filter 208 on 207 surface of protective layer of each pixel region I.
The filter 208 includes red color filter 208a, green color filter 208b or blue color filter 208c, Er Qieyi
Filter 208 with a kind of color on a photoelectricity doped region 201, the light into the filter 208 can be by a kind of face
208 colour filter of filter of color, the then incident light being irradiated on photodiode are monochromatic light.
Due to having barrier structure 206 between adjacent filter 208, when incident light is radiated at barrier structure 206
When, emit in the side wall of barrier structure 206 so that incident light is again introduced into corresponding photodiode, therefore, described
Barrier structure 206 can prevent incident light to be irradiated in adjacent filter 208.Also, since filter 208 covers blocking junction
The side wall of structure 206, and the top dimension of the barrier structure 206 is less than bottom size, therefore, 208 top ruler of the filter
It is very little to be more than bottom size so that the incident light for entering pixel region I is more, is conducive to improve quantum conversion.
The lens arrangement 209 enables the incident light by a lens arrangement 209 to be irradiated to this for focusing light
On photodiode corresponding to lens arrangement 209.
Correspondingly, the present invention also provides a kind of imaging sensors, referring to FIG. 7, including：
Substrate 200, the substrate include several pixel regions I being separated from each other；
The barrier structure 206 on 200 surface of substrate, the bottom size of the barrier structure 206 between adjacent pixel area I
More than top dimension, and the side wall of the barrier structure 206 and bottom are at an acute angle；
Filter 208 positioned at each I substrate of the pixel region, 200 surface, the filter 208 cover barrier structure 206
Side wall.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (12)
1. a kind of forming method of imaging sensor, which is characterized in that including：
Substrate is provided, the substrate includes several pixel regions being separated from each other；
Substrate surface between adjacent pixel area forms barrier structure, and the bottom size of the barrier structure is more than top ruler
It is very little, and the side wall of the barrier structure and bottom surface are at an acute angle；
It is respectively formed filter, the side wall of the filter covering barrier structure in the substrate surface of each pixel region.
2. the forming method of imaging sensor as described in claim 1, which is characterized in that the material of the barrier structure is gold
Belong to；The metal includes tungsten or aluminium.
3. the forming method of imaging sensor as described in claim 1, which is characterized in that the angle is ranging from：60 degree
~85 degree.
4. the forming method of imaging sensor as described in claim 1, which is characterized in that the barrier structure bottom size
For：0.1 micron~0.16 micron.
5. the forming method of imaging sensor as described in claim 1, which is characterized in that the barrier structure top dimension
For：0.02 micron~0.08 micron.
6. the forming method of imaging sensor as described in claim 1, which is characterized in that have well region, institute in the substrate
Stating has the first Doped ions in well region；There is photoelectricity doped region in the well region of the pixel region, have in the photoelectricity doped region
There are the second Doped ions, second Doped ions opposite with the conduction type of the first Doped ions.
7. the forming method of imaging sensor as described in claim 1, which is characterized in that it is formed before the barrier structure,
The forming method further includes：Passivation layer is formed in the substrate surface；Stop-layer is formed in the passivation layer surface.
8. the forming method of imaging sensor as claimed in claim 7, which is characterized in that the forming method of the barrier structure
Including：Barrier structure film is formed in the stopping layer surface, the barrier structure film surface between adjacent pixel area has the
One mask layer；Using first mask layer as mask, the barrier structure film is etched, until exposing the top table of stop-layer
Face forms the barrier structure.
9. the forming method of imaging sensor as claimed in claim 8, which is characterized in that with first mask layer be cover
Film, the technique for etching the barrier structure film include one or two kinds of group in dry etch process and wet-etching technology
It closes.
10. the forming method of imaging sensor as described in claim 1, which is characterized in that the filter is red color filter
One in mirror, green color filter or blue color filter；The top dimension of the filter is more than bottom size.
11. the forming method of imaging sensor as described in claim 1, which is characterized in that formed after the filter, institute
Stating forming method further includes：Lens arrangement is formed on the filter surface.
12. a kind of being formed by imaging sensor using such as any one of claim 1 to 11 method, which is characterized in that including：
Substrate, the substrate include several pixel regions being separated from each other；
The bottom size of the barrier structure of substrate surface between adjacent pixel area, the barrier structure is more than top dimension,
And the barrier structure side wall and bottom surface are at an acute angle；
Positioned at the filter of the substrate surface of each pixel region, the side wall of the filter covering barrier structure.
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| CN201810381052.6A CN108428711A (en) | 2018-04-25 | 2018-04-25 | Imaging sensor and forming method thereof |
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| CN201810381052.6A CN108428711A (en) | 2018-04-25 | 2018-04-25 | Imaging sensor and forming method thereof |
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