CN103985763B - 半导体装置和显示装置 - Google Patents
半导体装置和显示装置 Download PDFInfo
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- CN103985763B CN103985763B CN201410196055.4A CN201410196055A CN103985763B CN 103985763 B CN103985763 B CN 103985763B CN 201410196055 A CN201410196055 A CN 201410196055A CN 103985763 B CN103985763 B CN 103985763B
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-312163 | 2007-12-03 | ||
| JP2007312163 | 2007-12-03 | ||
| CN200810183805.9A CN101452962B (zh) | 2007-12-03 | 2008-12-02 | 半导体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810183805.9A Division CN101452962B (zh) | 2007-12-03 | 2008-12-02 | 半导体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103985763A CN103985763A (zh) | 2014-08-13 |
| CN103985763B true CN103985763B (zh) | 2018-02-06 |
Family
ID=40427859
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410196055.4A Expired - Fee Related CN103985763B (zh) | 2007-12-03 | 2008-12-02 | 半导体装置和显示装置 |
| CN200810183805.9A Expired - Fee Related CN101452962B (zh) | 2007-12-03 | 2008-12-02 | 半导体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810183805.9A Expired - Fee Related CN101452962B (zh) | 2007-12-03 | 2008-12-02 | 半导体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8047442B2 (https=) |
| EP (1) | EP2071627B1 (https=) |
| JP (11) | JP5514429B2 (https=) |
| KR (2) | KR101720512B1 (https=) |
| CN (2) | CN103985763B (https=) |
| TW (1) | TWI459542B (https=) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8325047B2 (en) * | 2009-04-08 | 2012-12-04 | Sabic Innovative Plastics Ip B.V. | Encapsulated RFID tags and methods of making same |
| KR101465192B1 (ko) | 2010-04-09 | 2014-11-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TWI657580B (zh) * | 2011-01-26 | 2019-04-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置及其製造方法 |
| US8946066B2 (en) * | 2011-05-11 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
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