CN103489813A - 用于固化电介质膜的多步系统和方法 - Google Patents
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Abstract
一种用于使电介质膜固化的多步系统和方法,其中该系统包括被配置成用于减少电介质膜中的污染物(例如水分)的量的干燥系统。该系统还包括与干燥系统耦合的固化系统,该固化系统被配置成通过紫外(UV)辐射和红外(IR)辐射处理电介质膜来固化该电介质膜。
Description
本申请是申请号为200680050790.8、申请日为2006年10月6日、发明名称为“用于固化电介质膜的多步系统和方法”的母案申请的分案申请。
技术领域
本发明涉及一种用于处理电介质膜的多步系统和方法,更具体地涉及一种用于干燥和固化电介质膜的原位多步系统和方法。
背景技术
如半导体领域中的技术人员所知,提高集成电路(IC)的速度和性能的主要限制因素是互连延迟。使互连延迟最小化的一个方法是通过在IC器件中使用低介电常数(低k)材料作为金属导线的绝缘电介质来减小互连电容。因此,近年来,低k材料已经被开发来代替诸如二氧化硅的较高介电常数绝缘材料。具体来说,低k膜正在被用于半导体器件的金属导线之间的层间和层内电介质层。此外,为了进一步减小绝缘材料的介电常数,材料膜形成有多个孔,即多孔低k电介质膜。这样的低k膜可以通过类似于涂敷光刻胶的旋涂电介质(SOD)法或者通过化学气相沉积(CVD)被沉积。因此,低k材料的使用容易适用于现有的半导体制造工艺。
低k材料的坚固性比不上更传统的二氧化硅,而且多孔性的存在使其机械强度进一步降低。多孔低k膜容易在等离子体处理过程中损伤,因而需要对其机械强度进行强化。已经认识到,增强多孔低k电介质材料的强度对于成功地集成该材料来说是必须的。为了提高机械强度,目前正在寻求各种固化技术来使多孔低k膜更坚固并适于集成。
聚合物的固化包括如下过程:对采用例如旋涂或气相沉积(如化学气相沉积,CVD)技术沉积的薄膜进行处理,以使该薄膜中发生交联。在固化过程中,自由基聚合被认为是交联的主要途径。由于聚合物链的交联,诸如杨氏模量、膜硬度、断裂韧度和界面粘附性之类的机械性质得以改善,从而提高了低k膜的制造坚固性。
由于形成具有超低介电常数的多孔电介质膜的方式多种多样,后沉积处理(固化)的目标也依赖于膜而有所不同,例如去除水分、去除溶剂、烧蚀多孔电介质膜中的用于形成孔的成孔剂、提高这种膜的机械性质等等。
对于CVD膜,低介电常数(低k)材料通常在300-400℃的温度下热固化。例如,热炉固化足以制造介电常数大于约2.5的坚固且致密的低k膜。然而,当处理大孔隙率的多孔电介质膜(例如超低k膜)时,通过热处理(或热固化)得到的交联度已不足以制造出对于坚固的互连结构来说强度足够大的膜。
在热固化过程中注意到,在不损伤电介质膜的前提下,适量的能量被输送至该膜。但在期望的温度范围内,只能生成少量的自由基。由于衬底结合热量时会损失热能并且部分热量损失到周围环境中,实际上只有少量热能被吸收到待固化低k膜中。因此,低k热炉固化通常需要较高的温度和较长的固化时间。但即使在热预算较高的条件下,热固化过程中所产生的引发剂的缺乏以及被沉积的低k膜中大量甲基末端的存在也会使达到期望的交联度十分困难。
发明内容
本发明的一个方面可以减轻或消除上述问题或现有技术中与处理电介质膜相关的其它问题。
本发明的另一个方面可以对电介质膜进行处理以使其固化。
本发明的另一个方面可以通过使用彼此耦合的多个工艺模块进行原位多步干燥和固化工艺来处理电介质膜。
根据本发明,上述和/或其它方面可由用于处理电介质膜的处理系统来提供。在一种实施方式中,用于处理衬底上的电介质膜的处理系统包括:干燥系统,被配置成进行干燥工艺以减少电介质膜中或电介质膜上的污染物的量;与干燥系统耦合的固化系统,被配置成进行固化工艺。固化系统包括:紫外(UV)辐射源,被配置成将电介质膜暴露于UV辐射;红外(IR)辐射源,被配置成将电介质膜暴露于IR辐射。该系统还包括与干燥系统和固化系统耦合的转移系统。该转移系统被配置成用于在真空条件下将衬底在干燥系统与固化系统之间交换。
在另一种实施方式中,用于处理衬底上的电介质膜的方法和计算机可读介质包括:将衬底放置在干燥系统中;根据干燥工艺干燥该电介质膜以便于去除或部分去除该电介质膜上或该电介质膜中的污染物;将衬底从干燥系统转移至固化系统,同时在转移过程中保持真空条件;通过将电介质膜暴露于UV辐射和将电介质膜暴露于IR辐射来固化该电介质膜。
附图说明
图1A-1C为根据本发明的一种实施方式的用于干燥系统和固化系统的转移系统的示意图;
图2为根据本发明的另一种实施方式的干燥系统的剖面示意图;
图3为根据本发明的另一种实施方式的固化系统的剖面示意图;
图4为根据本发明的另一种实施方式的电介质膜处理方法的流程图。
具体实施方式
为了便于充分理解本发明并且出于解释而非限制的目的,以下描述中提出了具体细节,例如处理系统的具体几何结构以及各个部件的描述。然而,应当理解,本发明可以通过不同于这些具体细节的其它实施方式来实现。
本发明人认识到,替代性固化方法解决了热固化的一部分缺陷。例如,与热固化方法相比,替代性固化方法在能量转移方面效率更高,而且以高能粒子形式(例如加速电子、离子或中性粒子)或高能光子形式存在的较高能量水平易于激发低k膜中的电子,从而有效地使化学键断裂和侧基脱离。这些替代性固化方法有利于生成交联引发剂(自由基),并且可以改善实际交联时需要的能量转移。因此,可以在降低的热量预算下提高交联度。
此外,本发明人已经认识到,对于超低k(ULK)电介质膜(介电常数小于约2.5)的集成来说,膜强度的问题变得越来越重要,而替代性固化方法可以改善这种膜的机械性质。例如,为了提高机械强度,可以使用电子束(EB)、紫外(UV)辐射、红外(IR)辐射和微波(MW)辐射来固化UKL膜,而不必牺牲介电性质和膜疏水性。
然而,尽管EB、UV、IR和MW固化各有优点,但这些技术也有局限性。例如EB和UV的高能固化源会提供高能量水平而产生过多的交联自由基,这导致机械性质在额外的衬底加热下被显著改善。而另一方面,电子和UV光子不加选择地分解化学键,这会不利地降低薄膜期望的物理和电气性质,例如疏水性下降、残余膜应力升高、孔结构塌陷、膜致密化以及介电常数增大。此外,低能固化源(例如IR和MW固化)可以明显提高传热效率,但同时也存在副效应,例如表层或表面致密化(IR)以及电弧放电或晶体管损坏(MW)。
现在参见附图,其中类似的附图标记表示相同或相应的部件,图1A示出了根据本发明的一种实施方式的用于处理衬底上的电介质膜的处理系统1。处理系统1包括干燥系统10以及与干燥系统10耦合的固化系统20。例如,干燥系统10可被配置成用于去除(或减少至足够低的水平)电介质膜中的一种或更多种污染物,包括例如水分、溶剂、成孔剂或可能妨碍固化系统20中进行的固化工艺的任何其它污染物。
例如,电介质膜中存在的某种污染物的足够减少量(从干燥工艺前到干燥工艺后)是指减少大约10-100%的该种污染物。可以使用傅立叶变换红外(FTIR)光谱法或质谱法来测量污染物的减少水平。或者,例如,电介质膜中存在的某种污染物的足够减少量可为约50-100%。或者,例如电介质膜中存在的某种污染物的足够减少量可为约80-100%。
仍参见图1A,固化系统20可被配置成通过使电介质膜中发生交联或部分交联来固化电介质膜,从而例如改善电介质膜的机械性质。固化系统20可包括两个或更多个辐射源,该辐射源被配置成将具有电介质膜的衬底暴露于多种电磁(EM)波长的电磁辐射。例如,所述两个或更多个辐射源可包括红外(IR)辐射源和紫外(UV)辐射源。衬底可以同时、依次或交错地暴露于UV辐射和IR辐射。当依次暴露时,衬底可例如先暴露于UV辐射再暴露于IR辐射,或相反。
例如,IR辐射可包括约1-25微米、优选约8-14微米的IR波段源。此外,例如,UV辐射可包括约100-600纳米(nm)、优选约200-400nm的UV波段源。
本发明人认识到,能级(hν)和能量被输送至电介质膜的速率(q’)在固化工艺的不同阶段有所变化。固化工艺可包括各种机理:生成交联引发剂、烧蚀成孔剂、分解成孔剂、膜交联和可选的交联引发剂扩散。每种机理可能需要不同的能级和能量到电介质膜的输送速率。例如,在基体材料的固化过程中,交联引发剂可以通过基体材料中的光子和声子诱导键离解来生成。键离解所需能级可小于或等于约300-400nm。此外,例如,成孔剂的烧蚀可通过感光剂对光子的吸收来促进。成孔剂烧蚀所需的UV波长例如小于或等于300-400nm。另外,例如,交联可通过足以形成和重组键的热能来促进。键的形成和重组所需能级的波长约为9微米(例如,对应于硅氧烷基有机硅酸盐低k材料的主吸收峰)。
待处理衬底可以是半导体、金属导体或其上将形成电介质膜的任何其它衬底。电介质膜的介电常数值(干燥和/或固化之前和/或之后)小于SiO2的介电常数(约为4),例如热二氧化硅的介电常数可为3.8-3.9。在本发明的各种实施方式中,电介质膜的介电常数(干燥和/或固化之前和/或之后)可小于3.0,或小于2.5,或为1.6-2.7。电介质膜可被描述为低k膜或超低k膜。电介质膜可例如包括双相多孔低k膜,该膜的介电常数在烧蚀成孔剂之前比烧蚀成孔剂之后高。此外,电介质膜可含有水分和/或其它污染物,这些物质会使干燥和/或固化前的介电常数高于干燥和/或固化后的介电常数。
电介质膜可利用化学气相沉积(CVD)技术或旋涂电介质(SOD)技术来形成,例如由从Tokyo Electron Limited(TEL)购得的Clean TrackACT 8 SOD和ACT 12 SOD涂布系统得到的那些。Clean Track ACT 8(200mm)和ACT 12(300nm)涂布系统提供SOD材料的涂布、烘焙和固化设备。该系统可被配置成用于处理尺寸为100mm、200mm、300mm以及更大的衬底。旋涂电介质技术和CVD电介质技术领域的技术人员已知的其它用于在衬底上形成电介质膜的系统和方法也适用于本发明。
该电介质膜的特点是具有低介电常数(低k)。电介质膜可包括至少一种有机、无机和无机-有机杂化材料。此外,电介质膜可以是多孔或无孔的。例如,电介质膜可包括用CVD技术沉积的无机硅酸盐基材料,例如氧化的有机硅烷(即有机硅氧烷)。这种膜的示例包括可从AppliedMaterials Inc购得的Black DiamondTM CVD有机硅酸盐玻璃(OSG)膜或可从Novellus Systems购得的CoralTM CVD膜。此外,例如,多孔电介质膜可包括单相材料,例如具有末端有机侧基的氧化硅基基体,这些侧基在固化过程中抑制交联生成小空隙(或孔)。此外,例如,多孔电介质膜可包括双相材料,例如包含在固化过程中分解和蒸发的有机材料(例如成孔剂)的氧化硅基基体。或者,电介质膜可包括用SOD技术沉积的无机硅酸盐基材料,例如氢硅倍半氧烷(HSQ)或甲基硅倍半氧烷(MSQ)。这些膜的示例包括可从Dow Corning购得的FOx HSQ、可从Dow Corning购得的XLK多孔HSQ和可从JSR Microelectronics购得的JSR LKD-5109。或者,电介质膜可包括用SOD技术沉积的有机材料。这些膜的示例包括可从Dow Chemical购得的SiLK-I、SiLK-J、SiLK-H、SiLK-D、多孔SiLK-T、多孔SiLK-Y和多孔SiLK-Z半导体电介质树脂和可从Honeywell购得的FLARETM和Nano-glass。
如图1A所示,为了将衬底移入和移出干燥系统10和固化系统20并与多元件制造系统40交换衬底,可将转移系统30与干燥系统10耦合。转移系统30可将衬底转移到干燥系统10和固化系统20中,也可将衬底从其中移出。干燥系统10、固化系统20和转移系统30可例如包括多元件制造系统40中的处理元件。例如,多元件制造系统40可使衬底移入和移出处理元件(例如蚀刻系统、沉积系统、涂布系统、图案化系统、测量系统等)。为了隔离第一和第二系统中进行的工艺,可使用隔离组件50来耦合各系统。例如,隔离组件50可包括隔离热的热绝缘组件和提供真空的门阀组件中的至少一种。干燥系统10、固化系统20和转移系统30可以以任意顺序布置。
或者,在本发明的另一种实施方式中,图1B示出了用于处理衬底上的电介质膜的处理系统100。处理系统100包括“集合式”排列的干燥系统110和固化系统120。例如,干燥系统110可被配置成去除(或减少至足够低的水平)电介质膜中的一种或更多种污染物,包括例如水分、溶剂、成孔剂或可能妨碍固化系统120中进行的固化工艺的任何其它污染物。此外,例如,固化系统120可被配置成通过在电介质膜内引起或部分引起交联来固化电介质膜,从而例如提高电介质膜的机械性质。此外,处理系统100可选地包括被配置成用于改进经固化的电介质膜的后处理系统140。例如,后处理可包括在电介质膜上旋涂或气相沉积另一层膜以提高对后续膜的粘附性或改善疏水性。或者,例如,可以通过在后处理系统中用离子轻度轰击电介质膜来提高粘附性。
另外,如图1B所示,为了将衬底移入和移出干燥系统110,可将转移系统130与干燥系统110耦合;为了将衬底移入和移出固化系统120,可将转移系统130与固化系统120耦合;为了将衬底移入和移出后处理系统140,可将转移系统130与后处理系统140耦合。转移系统130可将衬底移入和移出干燥系统110、固化系统120和可选的后处理系统140,同时保持真空环境。
此外,转移系统130可与一个或更多个衬底盒(未示出)交换衬底。虽然图1B仅示出了两个或三个处理系统,但是其它可与转移系统130耦合的处理系统包括例如蚀刻系统、沉积系统、涂布系统、图案化系统、测量系统等。为了隔离干燥和固化系统中进行的工艺,可使用隔离组件150来耦合各系统。例如,隔离组件150可包括隔离热的热绝缘组件和提供真空的门阀组件中的至少一种。此外,例如,转移系统130可作为隔离组件150的一部分。
或者,在本发明的另一种实施方式中,图1C示出了用于在衬底上处理电介质膜的处理系统200。处理系统200包括干燥系统210和固化系统220。例如,干燥系统210可被配置成用于去除(或减少至足够低的水平)电介质膜中的一种或更多种污染物,包括例如水分、溶剂、成孔剂或可能妨碍固化系统220中进行的固化工艺的任何其它污染物。此外,例如,固化系统220可被配置成用于通过在电介质膜内引起或部分引起交联来固化电介质膜,从而例如提高电介质膜的机械性质。此外,处理系统200可选地包括被配置成用于改进经固化的电介质膜的后处理系统240。例如,后处理可包括在电介质膜上旋涂或气相沉积另一层膜以提高对后续膜的粘附性或改善疏水性。或者,例如,可以通过在后处理系统中用离子轻度轰击电介质膜来提高粘附性。
干燥系统210、固化系统220和后处理系统240可水平排列或垂直排列(即叠积)。另外,如图1C所示,为了将衬底移入和移出干燥系统210,可将转移系统230与干燥系统210耦合;为了将衬底移入和移出固化系统220,可将转移系统230与固化系统220耦合;为了将衬底移入和移出后处理系统240,可将转移系统230与后处理系统240耦合。转移系统230可将衬底移入和移出干燥系统210、固化系统220和可选的后处理系统240,同时保持真空环境。
此外,转移系统230可与一个或更多个衬底盒(未示出)交换衬底。虽然图1C仅示出了三个处理系统,但是其它可与转移系统230耦合的处理系统包括例如蚀刻系统、沉积系统、涂布系统、图案化系统、测量系统等。为了隔离第一和第二系统中进行的工艺,可使用隔离组件250来耦合各系统。例如,隔离组件250可包括隔离热的热绝缘组件和提供真空的门阀组件中的至少一种。此外,例如,转移系统230可作为隔离组件250的一部分。
图1A所示的处理系统1的干燥系统10和固化系统20中的至少一个包括至少两个可使衬底从其中穿过的转移开口。如图1A所示,干燥系统10包括两个转移开口,第一转移开口可使衬底在干燥系统10与转移系统30之间转移,第二转移开口可使衬底在干燥系统与固化系统之间转移。然而,对于图1B所示的处理系统100和图1C所示的处理系统200,每个处理系统110、120、140和210、220、240分别包括至少一个可使衬底从其中穿过的转移开口。
现在参见图2,图2示出了根据本发明的另一种实施方式的干燥系统300。干燥系统300包括干燥室310,被配置成用于提供清洁且无污染的环境以对安置在衬底支架320上的衬底325进行干燥。干燥系统300可包括与干燥室310或衬底支架320耦合的热处理装置330,被配置用于通过升高衬底325的温度来蒸发污染物(例如水分、残余溶剂等)。此外,干燥系统300可包括与干燥室310耦合的微波处理装置340,用于在振荡电场的存在下局部加热污染物。干燥工艺可利用热处理装置330和/或微波处理装置340来促进衬底325上的电介质膜的干燥。
热处理装置330可包括一个或更多个嵌入衬底支架320中并与功率源和温度控制器耦合的导电加热元件。例如,每个加热元件可包括与被配置成用于提供电功率的功率源耦合的电阻加热元件。或者,热处理装置330可包括一个或更多个与功率源和控制器耦合的辐射加热元件。例如,每个辐射加热元件可包括与被配置成用于提供电功率的功率源耦合的热灯。衬底325的温度可例如为约20-500℃,优选约200-400℃。
微波处理装置340可包括被配置成用于使微波频率扫过一定频带宽度的变频微波源。频率的变化避免了电荷积累,从而使敏感的电子器件无损伤地应用微波干燥技术。
在一个实施例中,干燥系统300可包括干燥系统,该干燥系统包括变频微波装置和热处理装置,例如可从Lambda Technologies,Inc.(860Aviation Parkway,Suite 900,Morrisville,NC 27560)购得的微波炉。关于微波炉的更多细节描述在转让给Lambda Technologies,Inc.的名称为“Curing polymer layers on semiconductor substrates using variable frequencymicrowave energy”的美国专利No.5738915中,通过引用将其全部内容结合于此。
衬底支架320可夹持或不夹持衬底325。例如,衬底支架320可采用机械方式或电方式来夹持衬底325。
再参见图2,干燥系统300还可包括与干燥室耦合的气体注射系统350,被配置成用于将净化气体引入干燥室310。净化气体可例如包括惰性气体,如稀有气体或氮气。此外,干燥系统300可包括与干燥室310耦合的真空泵送系统355,被配置成用于将干燥室310抽真空。在干燥工艺中,衬底325可处于真空或非真空条件下的惰性气氛中。
此外,干燥系统300可包括与干燥室310、衬底支架320、热处理装置330、微波处理装置340、气体注射系统350和真空泵送系统355耦合的控制器360。控制器360包括微处理器、存储器和能够生成控制电压的数字I/O端口,该控制电压足以传输并激活到干燥系统300的输入,以及监视来自干燥系统300的输出。存储在存储器中的程序用来根据所存储的制程配方控制干燥系统300。控制器360可用于设置任何数量的处理元件(310、320、330、340、350或355),并且控制器360可收集、提供、处理、存储和显示来自处理元件的数据。控制器360可包括大量用于控制一个或更多个处理元件的应用程序。例如,控制器360可包括图形用户界面(GUI)部件(未示出),该部件可为用户提供界面以便于监测和/或控制一个或更多个处理元件。
现在参见图3,图3示出了根据本发明的另一种实施方式的固化系统400。固化系统400包括固化室410,被配置成用于提供清洁且无污染的环境以对安置在衬底支架420上的衬底425进行干燥。固化系统400还包括两个或更多个辐射源,被配置成用于将具有电介质膜的衬底425暴露于多种EM波长的电磁(EM)辐射中。所示两个或更多个辐射源可包括红外(IR)辐射源440和紫外(UV)辐射源445。衬底可以同时、依次或彼此交错地暴露于UV辐射和IR辐射。
IR辐射源440可包括宽波段IR源,或可包括窄波段IR源。IR辐射源可包括一个或更多个IR灯或者一个或更多个IR激光器(连续波(CW)激光器、可调激光器或脉冲激光器),或其任意组合。IR功率可为约0.1-2000W。IR辐射波长可为约1-25微米,优选约8-14微米。例如,IR辐射源440可包括光谱输出为约1-25微米的IR元件(例如陶瓷元件或碳化硅元件),或者IR辐射源440可包括半导体激光器(二极管)或者离子、Ti:蓝宝石或染料激光器(光参量放大)。
UV辐射源445可包括宽波段UV源,或可包括窄波段UV源。UV辐射源可包括一个或更多个UV灯或者一个或更多个UV激光器(连续波(CW)激光器、可调激光器或脉冲激光器),或其任意组合。UV辐射可例如由微波源、电弧放电、电介质阻挡放电或电子碰撞产生。UV功率密度可为约0.1-2000mW/cm2。UV波长可为约100-600nm,优选约200-400nm。例如,UV辐射源445可包括光谱输出为约180-500nm的直流(DC)或脉冲灯(如氘(D2)灯),或UV辐射源445可包括半导体激光器、(氮)气体激光器、三倍频Nd:YAG激光器或铜蒸汽激光器。
IR辐射源440和/或UV辐射源445可包括任意数量的用于调节输出辐射的一种或更多种性质的光学器件。例如,每个辐射源还可包括滤光器、光学透镜、光束扩展器、光束准直器灯。适用于本发明的是光学和电磁波产品领域的技术人员已知的光学控制器件。
衬底支架420还可包括可被配置成用于升高和/或控制衬底425温度的温度控制系统。温度控制系统可以是热处理装置430的一部分。衬底支架420可包括一个或更多个嵌入衬底支架420中并与功率源和温度控制器耦合的导电加热元件。例如,每个加热元件可包括与被配置成用于提供电功率的功率源耦合的电阻加热元件。衬底支架420可选地包括一个或更多个辐射加热元件。衬底425的温度可例如为约20-500℃,优选约200-400℃。
衬底支架420可夹持或不夹持衬底425。例如,衬底支架420可采用机械方式或电方式来夹持衬底425。
再参见图3,固化系统400还可包括与固化室410耦合的气体注射系统450,被配置成用于将净化气体引入固化室410。净化气体可例如包括惰性气体,如稀有气体或氮气。或者,净化气体可包括其它气体,例如H2、NH3、CxHy或其任意组合。此外,固化系统400可包括与固化室410耦合的真空泵送系统455,被配置成用于将固化室410抽真空。在固化工艺中,衬底425可处于真空或非真空条件下的净化气体环境中。
此外,固化系统400可包括与固化室410、衬底支架420、热处理装置430、微波处理装置440、UV辐射源445、气体注射系统450和真空泵送系统455耦合的控制器460。控制器460包括微处理器、存储器和能够生成控制电压的数字I/O端口,该控制电压足以传输并激活到固化系统400的输入,以及监视来自固化系统400的输出。利用存储在存储器中的程序根据所存储的制程配方来控制固化系统400。控制器460可用于设置任何数量的处理元件(410、420、430、440、445、450或455),并且控制器460可收集、提供、处理、存储和显示来自处理元件的数据。控制器460可包括大量用于控制一个或更多个处理元件的应用程序。例如,控制器460可包括图形用户界面(GUI)部件(未示出),该部件可为用户提供界面以便于监测和/或控制一个或更多个处理元件。
控制器360和460可以实现为Dell Precision Workstation 610TM。控制器360和460还可以实现为通用计算机、处理器、数字信号处理器等,它们可使衬底处理设备响应于控制器360和460执行包含在计算机可读介质中的一条或多条指令的一个或多个序列而执行本发明的处理步骤的一部分或全部。计算机可读介质或存储器用于保存根据本发明的教导编程的指令并且容纳数据结构、表、记录或者上述的其它数据。计算机可读介质的示例是光盘、硬盘、软盘、磁带、磁光盘、PROM(EPROM、EEPROM、闪存EPROM)、DRAM、SRAM、SDRAM或者任何其他磁介质、光盘(例如CD-ROM)、或者任何其它光介质、穿孔卡片、纸带、或者具有孔图案的其它物理介质、载波(将在下面描述),或者计算机可以读取的任何其它介质。
控制器360和460可以相对于干燥系统300和固化系统400本地定位,或者可以通过互联网或内部网相对于干燥系统300和固化系统400远程定位。因此,控制器360和460可以通过直接连接、内部网和互联网中的一种方式与干燥系统300和固化系统400交换数据。控制器360和460可以在用户端(即器件制造商等)与内部网耦合,或者在卖方端(即设备制造商)与内部网耦合。此外,另一台计算机(即控制器、服务器等)也可以访问控制器360和460,从而通过直接连接、内部网和互联网中的一种方式来交换数据。
现在参见图4,图4描述了根据本发明的另一种实施方式的处理衬底上的电介质膜的方法。该方法的流程图500始于510,在510中,在第一处理系统中将衬底上的电介质膜干燥。第一处理系统包括干燥系统,被配置成用于去除或部分去除电介质膜中的一种或更多种污染物,包括例如水分、溶剂、成孔剂或可能妨碍后续固化工艺的任何其它污染物。
在520中,电介质膜在第二处理器中被固化。第二处理系统包括固化系统,被配置成用于通过使电介质膜内发生交联或部分交联来固化电介质膜,从而改善电介质膜的机械性质。干燥工艺后,为了使污染最小,在真空条件下将衬底从第一处理系统转移到第二处理系统。在第二处理系统中,衬底被暴露于UV辐射和IR辐射。此外,可选地,在干燥和固化工艺之后,在被配置成用于改性已固化的电介质膜的后处理系统中对电介质膜进行后处理。例如,后处理可包括在电介质膜上旋涂或气相沉积另一层膜,以提高对后续膜的粘附性或改善疏水性。或者,例如,可以通过在后处理系统中用离子轻度轰击电介质膜来提高粘附性。一种适用于本发明的上述后处理方法描述在名称为“Method of improving adhesion between thinfilms”的美国专利No.5714437中,通过引用将其全部内容结合于此。
尽管以上只是详细描述了本发明的某些实施例,但本领域技术人员很容易意识到,在实质上不脱离本发明的新颖教导和优点的前提下,可对示例性实施例进行许多改进。因此,所有这种改进均落入本发明的范围。
Claims (19)
1.一种处理衬底上的电介质膜的方法,包括:
通过下述处理固化所述衬底上的所述电介质膜:
将所述电介质膜暴露于红外(IR)辐射,所述红外辐射包括窄波段辐射;和
将所述电介质膜暴露于紫外(UV)辐射。
2.如权利要求1的方法,其中所述将所述电介质膜暴露于紫外辐射包括将所述电介质膜暴露于由一个或更多个UV灯、或一个或更多个UV激光器、或所述UV灯和所述UV激光器二者发出的紫外辐射。
3.如权利要求1的方法,还包括:
在所述固化之后,对所述电介质膜进行以下处理中的一个或更多个:在所述电介质膜上沉积另一个膜,清洁所述电介质膜,或将所述电介质膜暴露于等离子体。
4.如权利要求1的方法,其中所述电介质膜包括所沉积的介电常数小于4的低介电常数电介质膜。
5.如权利要求1的方法,其中所述电介质膜包括所沉积的介电常数小于2.5的低介电常数电介质膜。
6.如权利要求1的方法,其中所述将所述电介质膜暴露于红外辐射和所述将所述电介质膜暴露于紫外辐射被同时执行。
7.如权利要求1的方法,其中所述将所述电介质膜暴露于红外辐射和所述将所述电介质膜暴露于紫外辐射被依次执行。
8.如权利要求1的方法,其中所述将所述电介质膜暴露于红外辐射和所述将所述电介质膜暴露于紫外辐射被彼此交错地执行。
9.如权利要求1的方法,其中所述将所述电介质膜暴露于紫外辐射包括100-600纳米的UV波长范围。
10.如权利要求1的方法,其中所述将所述电介质膜暴露于紫外辐射包括200-400纳米的UV波长范围。
11.如权利要求1的方法,其中所述波长的窄波段位于8-14微米的波长范围内。
12.如权利要求1的方法,还包括:
加热所述衬底。
13.如权利要求12的方法,其中所述加热包括将所述衬底的温度升至20-500℃。
14.如权利要求12的方法,其中所述加热包括将所述衬底的温度升至200-400℃。
15.如权利要求12的方法,其中在所述将所述电介质膜暴露于紫外辐射期间进行所述加热。
16.如权利要求12的方法,其中在所述将所述电介质膜暴露于红外辐射期间进行所述加热。
17.如权利要求11的方法,还包括:
控制所述衬底的温度。
18.如权利要求17的方法,还包括;
在所述控制期间将所述衬底夹持到衬底支架。
19.如权利要求1的方法,其中所述电介质膜包括多孔低介电常数(低k)膜。
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WO2007055849A2 (en) | 2007-05-18 |
US20160027641A1 (en) | 2016-01-28 |
KR101291017B1 (ko) | 2013-07-30 |
US7622378B2 (en) | 2009-11-24 |
US10068765B2 (en) | 2018-09-04 |
KR20080067002A (ko) | 2008-07-17 |
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US20100041248A1 (en) | 2010-02-18 |
US20070105401A1 (en) | 2007-05-10 |
JP5496512B2 (ja) | 2014-05-21 |
JP2009520342A (ja) | 2009-05-21 |
US20160314966A1 (en) | 2016-10-27 |
CN101517708A (zh) | 2009-08-26 |
TWI360832B (en) | 2012-03-21 |
WO2007055849A3 (en) | 2009-05-07 |
TW200735171A (en) | 2007-09-16 |
US8642488B2 (en) | 2014-02-04 |
US9443725B2 (en) | 2016-09-13 |
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