CN103219301B - 功率半导体模块及其制造方法 - Google Patents

功率半导体模块及其制造方法 Download PDF

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CN103219301B
CN103219301B CN201210385725.8A CN201210385725A CN103219301B CN 103219301 B CN103219301 B CN 103219301B CN 201210385725 A CN201210385725 A CN 201210385725A CN 103219301 B CN103219301 B CN 103219301B
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electrode
power semiconductor
chip
electrodes
conductive layer
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CN103219301A (zh
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碓井修
吉松直树
菊池正雄
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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