JP5661052B2 - パワー半導体モジュールおよびその製造方法 - Google Patents

パワー半導体モジュールおよびその製造方法 Download PDF

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JP5661052B2
JP5661052B2 JP2012008083A JP2012008083A JP5661052B2 JP 5661052 B2 JP5661052 B2 JP 5661052B2 JP 2012008083 A JP2012008083 A JP 2012008083A JP 2012008083 A JP2012008083 A JP 2012008083A JP 5661052 B2 JP5661052 B2 JP 5661052B2
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electrodes
power semiconductor
semiconductor module
electrode
chip
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JP2013149730A (ja
JP2013149730A5 (enExample
Inventor
修 碓井
修 碓井
吉松　直樹
直樹 吉松
菊池　正雄
正雄 菊池
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2012008083A priority Critical patent/JP5661052B2/ja
Priority to US13/617,048 priority patent/US9059334B2/en
Priority to CN201210385725.8A priority patent/CN103219301B/zh
Priority to DE102012222879.9A priority patent/DE102012222879B4/de
Publication of JP2013149730A publication Critical patent/JP2013149730A/ja
Publication of JP2013149730A5 publication Critical patent/JP2013149730A5/ja
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)
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JP2023521767A (ja) * 2020-04-07 2023-05-25 ウルフスピード インコーポレイテッド 高電力用途のための電力モジュール
JP7492602B2 (ja) 2020-04-07 2024-05-29 ウルフスピード インコーポレイテッド 高電力用途のための電力モジュール
JP2024119826A (ja) * 2020-04-07 2024-09-03 ウルフスピード インコーポレイテッド 高電力用途のための電力モジュール

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