CN102754205B - 电源模块及其制造方法 - Google Patents

电源模块及其制造方法 Download PDF

Info

Publication number
CN102754205B
CN102754205B CN201080063673.1A CN201080063673A CN102754205B CN 102754205 B CN102754205 B CN 102754205B CN 201080063673 A CN201080063673 A CN 201080063673A CN 102754205 B CN102754205 B CN 102754205B
Authority
CN
China
Prior art keywords
resin
power module
substrate
dividing plate
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080063673.1A
Other languages
English (en)
Other versions
CN102754205A (zh
Inventor
斋藤正人
阿部博幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Astemo Ltd
Original Assignee
Hitachi Automotive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Automotive Systems Ltd filed Critical Hitachi Automotive Systems Ltd
Publication of CN102754205A publication Critical patent/CN102754205A/zh
Application granted granted Critical
Publication of CN102754205B publication Critical patent/CN102754205B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/296Organo-silicon compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45014Ribbon connectors, e.g. rectangular cross-section
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135Double encapsulation or coating and encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/163Connection portion, e.g. seal
    • H01L2924/16315Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

提供一种制造容易、且对焊锡部等的疲劳改善进行了研究的电源模块及其制造方法。本发明的电源模块由搭载有已焊接的电子零件的基板、收纳该基板且具有用于与外部进行电连接的母线的模制外壳构成,该电源模块包括:隔板,其设置于模制外壳,形成在基板上收纳电子零件的电子零件安装区域和进行与母线的接合作业的接合区域;第一树脂,其被注入到电子零件安装区域;和第二树脂,其被注入到接合区域。

Description

电源模块及其制造方法
技术领域
本发明涉及电源模块及其制造方法,特别涉及改善了焊锡部分的可靠性的适用于车载的电源模块及其制造方法。
背景技术
在导通大电流的电源模块中,需要改善伴随大电流导通而产生的发热的问题。伴随发热的问题的对策之一,是如何高效地将发热进行外部扩散,对电源模块研究并采用了各种外部扩散技术。
另外,其他应考虑的对策,是伴随电源模块内的各种部件间的线膨胀系数差的问题的对策。例如已知在电源模块内的元件和IC、电容器等电子零件、还有基板之间,通过适当的焊锡进行电连接,但由于电子部件与基板的线膨胀系数差,在焊锡部产生反复疲劳导致的裂纹,不久即发展到断裂的现象。
作为这些断裂现象的延长寿命化,在专利文献1中,已知通过用与焊锡的线膨胀系数匹配的环氧树脂注塑成型电子零件部,抑制在焊锡裂纹起点的应力集中,使焊锡部的寿命提高的手法。进而,在专利文献1中,提出了通过用具有与焊锡匹配的线膨胀系数的环氧树脂,填充设置于模块内部的基板整体,来谋求焊锡部的寿命的改善的结构。
另外,在专利文献2中,已知通过设计成将电线周围用柔软的聚酰亚胺系的树脂进行涂层,通过与焊锡的线膨胀系数匹配的环氧树脂对半导体元件部进行灌封,而在电线部不产生环氧树脂的约束力的结构。
另外,作为将基板上的区域分隔的手法,如专利文献3所述,已知利用除框体以外的部件包围半导体元件部的方法。
现有技术文献
专利文献
专利文献1:日本特开2005-56873号公报
专利文献2:日本特开2006-351737号公报
专利文献3:日本特开2004-259992号公报
发明内容
发明要解决的课题
上述专利文献中记载的技术是作为各自的用途的电源模块进行了研究的技术,而在本发明中,作为正在对应用进行探讨的车载用设备的近年的电源模块的情况,有要求的规格更加严格的情况。
近年来,对于环保型汽车,搭载于发动机室内的电源模块的用途增加,且在使用温度范围宽度更广的条件下使用。例如在怠速熄火起动机(Idle Stop Starter)用的电源模块中,电源模块被直接安装于发动机的起动机上,由电源模块对起动机中流经的数百安培的大电流进行开关控制,因此,由于发动机的发热和大电流通电产生的自身发热的影响,电源模块的温度有愈发上升的倾向。
如果是现有的电源模块,有比较充分的散热功能,其原因是通过使用例如散热器或高耐热的无机材料基板,例如Si3N4(氮化硅)基板、AlN(氮化铝)基板可应对。但是成为向有限的发动机室内部搭载的零件时,要求小型、高密度安装,其结果是,存在电源模块用元件的发热温度上升幅度增大,电源模块安装构造显得更加困难的状况。
关于这种环境下的焊锡部的裂纹发生的问题,利用专利文献1的对策“以具有与焊锡近似的线膨胀系数的环氧树脂填充”,能够改善焊锡寿命的可能性高,但是电子设备不只是用焊锡接合的零件。例如有由铝或铜等构成的电线或搭载这些电子零件的基板,它们的线膨胀系数与焊锡不同。尤其当电线为细线,用线膨胀系数不同的环氧树脂将电线全体密封时,不能实现应力产生时的伸展形成的应力缓和,电线会断线。
因而,通常设计为对接合电线,用凝胶等柔软的树脂进行密封。在专利文献2中,将电线周围用柔软的聚酰亚胺树脂进行涂层,但作为其固化温度,一般的制品为300℃左右,需要一定程度的保持时间。由于在该温度履历中,对形成基板的图案的铜箔图案的氧化、保护基板表面的抗蚀涂膜的氧化、铝电线的材质调制、进而电子零件的寿命降低带来影响,因此是缺乏现实性的方案。
在对被接合电线周围部以环氧树脂除外的树脂进行树脂涂层的上述专利文献2的手法中,需要以聚酰亚胺系的第一树脂将电线进行一次涂层,在固化炉中固化后,在半导体元件部注塑成型环氧树脂,使其固化,因此,在制造工序上需要进行两次固化工序,制造工时增大,因而会成为成本增加的主要原因。
另外,在专利文献3中,在电子零件附近以环氧树脂通过接合进行密封时,即使进行作为接合剂的环氧树脂注塑成型,由于环氧树脂的流变特性而会在基板上流动,在以树脂密封起来的范围上产生不平坦,成为品质下降的主要原因。
根据以上情况,本发明以提供制造容易,且对焊锡部等的疲劳改善做了研究的电源模块及其制造方法为目的。
解决课题的方案
本发明的电源模块,由搭载有已焊接的电子零件的基板、收纳该基板且具有用于与外部进行电连接的母线的模制外壳构成,该电源模块包括:隔板,其设置于模制外壳,形成在基板上收纳电子零件的电子零件安装区域和进行与母线的接合作业的接合区域;第一树脂,其被注入到电子零件安装区域;和第二树脂,其被注入到接合区域。
另外,本发明的电源模块的制造方法,在基板上安装电子零件等,使用第三树脂将具备隔板的模制外壳与基板紧贴固定,由此形成在基板上安装有电子零件的电子零件安装区域和用于与外部连接的接合区域,在第三树脂固化后,在接合区域内进行接合作业,在电子零件安装区域充填第一树脂,在接合区域充填第二树脂,使第一树脂和第二树脂固化。
发明的效果
在本发明的电源模块中,能够提高安装有电子部件的焊锡和铝线的热循环疲劳的可靠性,此外,电子零件安装区域和接合区域被隔板彻底隔开,因此,可以同时注塑成型并固化上述第一树脂和第二树脂,能够缩短制造节拍。
附图说明
图1是电源模块的截面图。
图2是电源模块的俯视图。
图3是表示模制外壳3和基板2的连接关系的截面图。
图4是模制外壳3的平面图。
图5是表示电源模块的制造工序的示意图。
图6是将本发明应用于怠速熄火起动机的实施例的侧视图。
图7是将本发明应用于怠速熄火起动机的实施例的后视图。
图8是将本发明应用于怠速熄火起动机的实施例的电源模块结构图。
具体实施方式
下面,参照附图详细地说明本发明。
实施例
本发明的电源模块通过隔板将基板上分割成两类区域。为电子零件安装区域和接合区域。
图2为本发明的电源模块1的俯视图。被模制外壳3覆盖,由隔板9将基板2的区域分割成三个区域。在图2的例子中,左右的小室为接合区域15,中央的大室为电子零件安装区域14。
图1为本发明的电源模块1的截面图。根据该图,在基板2上设置有隔板9,利用设置于基板2的侧部的模制外壳3以及模制外壳3的上部的盖10,形成有三个空间。在中央的空间即电子零件安装区域14,功率半导体元件41、芯片电容器42、芯片电阻43、芯片二极管44、IC46等电子零件,以焊锡5焊接在基板2上。
另外,在左右的空间即接合区域15,铝垫(パツト)45由焊锡5焊接在基板2上,与安装在模制外壳3的嵌入母线12之间以铝、铜等电线6接合(Bonding)连接。在将本发明的电源模块应用于车辆的怠速熄火起动机的情况下,通过接合连接,使在基板上流动的电流向外部的起动机侧导通。
此外,在各个区域内进行了各零件的连接后,在电子零件安装区域14,作为第一树脂7填充环氧树脂,在接合区域15,作为第二树脂8填充硅凝胶。
接着,对如上所述构成的本发明的电源模块的各部零件进行说明。之后,对本发明的制法和其作用、效果进行说明。
首先,基板2的母材由铝、铜、铁、或者包含上述所示材料的合金构成,在作为母材的铝的上表面经由环氧系树脂等构成的绝缘层,形成铜导体的电路。
在铜导体的上表面,功率半导体元件41、芯片电容器42、芯片电阻43、芯片二极管44、铝垫45、IC46通过焊锡5电连接。本发明的目的为改善该焊接部分的疲劳,但在本发明中进行说明时的“焊接”,除无铅焊接即Sn-3Ag-0.5Cu等以外,还包含经由导电性粘接部件等进行接合的情况。
模制外壳3收容基板2,在应用于车辆的怠速熄火起动机的事例的情况下,进行与外部的起动机的电连接及机械联接。其材料由PPS(Polyphenylene Sulfide:聚苯硫醚)或PBT(Polybutylene Terephthalate:聚对苯二甲酸丁二醇酯)等热可塑性树脂构成,在内部嵌入成型有用于与起动机进行电连接的、由铜构成的嵌入母线12。
模制外壳3的嵌入母线12和基板2的接合区域15内的铝垫45,由铝、铜等电线6接合连接,进行用于使在基板上流过的电流向外部的起动机侧导通的电连接。
在此,可知从成本、操作性、可靠性的观点看,用于接合的接合电线优选铝电线。此外,铝垫45为在基板2侧进行铝电线接合所必要的接合用垫。另外,嵌入母线12和铝垫45的连接由铝带接合即可。
在电源模块1内部,由隔板9在基板上分隔出安装于基板2上的电子零件安装区域14、由铝电线6与模制外壳3的嵌入母线12接合连接的接合区域15。下面,对隔板9详细地进行说明。
在模制外壳3的内侧,通过一体模制成型,隔板9成型为薄壁状。隔板9的板厚在进行模制成型时受树脂流的影响,因此设定在成型良好的0.5~3.0mm的范围。
该隔板9是与模制外壳3一体模制成型的成型品,因此,能够如图2所示弯曲成与接合需要的空间匹配的形状来决定形状。因此,以分割为必要最低限的区域的方式,弯曲并成型电子零件安装区域14和接合区域15,所以能够高效地使用基板面积进行零件安装。
隔板9虽然与模制外壳3一体模制成型,但在它们与基板2的关系中,需要使用树脂将模制外壳3和基板2进行紧贴固定。图3为表示用于将隔板9或者模制外壳3与基板2进行紧贴固定的构成的截面图。另外,图4为模制外壳3的平面图。
在图3中,在隔板9上,为了确保与基板2的接触面积,基板承接面91被设置在接合区域15侧。而且,在隔板9的基板承接面91内成型有树脂承接槽13。此外,在模制外壳3与基板2的接触面上,也成型有如图3、4所示的树脂承接槽13。
隔板9或模制外壳3与基板2的关系设计成这种结构,在基板2与树脂承接槽13之间,涂敷第三树脂11并使其固化,从而包含隔板9的模制外壳3和基板2被紧贴固定。通过这样操作,能够将电子零件安装区域14和接合区域15在基板2上彻底分割。这里,作为第三树脂11,使用硅胶粘合剂即可。
此外,隔板9的基板承接面91向接合区域15方向形成L字型,通过如此设计,基板承接面91不在电子零件安装区域14突出,因此,可加大电子零件安装区域14。
另外,由于L字型的基板承接面91对隔板9进行加强,因此能够将隔板的厚度薄壁化。另外,利用基板承接面91,能够确保隔板9的截面积,因此,隔板成型时的树脂液周围也良好,能够将隔板9薄壁化。
另外,接合区域15以接合设备的接合工具不与隔板9发生干扰的方式决定空间。因此,隔板9的基板承接面91以不与接合工具前端发生干扰的方式被决定高度方向低,因而,无需将接合区域15进一步地扩大基板承接面的空间量。
在图5中,表示本发明的1实施例的电源模块的制造工序。在该工序中,首先,在第一工序P100中,在基板2上安装电子零件等,在第二工序P101中,如在图3中说明的那样,使用第三树脂将模制外壳3和基板2进行紧贴固定,在第三工序P102中等待其固化。进而,在接合区域15内,进行接合作业后,在第四工序P103中,向电子零件安装区域14填充环氧树脂作为第一树脂7,在接合区域15填充硅凝胶作为第二树脂8,在第五工序P104中等待其固化。
这里,第四工序P103的、作为第一树脂7使用的环氧树脂,通过将其线膨胀系数设定为12~23×10-6/℃左右,且覆盖电子零件,缓和电子零件和铝基底基板的线膨胀系数差变大而发展至破坏的向焊锡的应力集中,加长寿命。
另外,第四工序P103的、作为第二树脂8使用的硅凝胶,由于是凝胶状,所以不会对铝电线部分附加应力,是用于进行电绝缘的凝胶。另外,作为第二树脂的功能,绝缘性、热固化性、低弹性模量的材料合适。
上述两种树脂由于是以在同等的条件下能够固化的方式选定固化温度,因此,能够在同一固化炉中同时固化。在本次的实施例中,以在130℃~150℃下固化的方式选定两种树脂。
另外,电源模块1的区域由隔板9以两种树脂不会混杂的方式完全地分离,隔板9和基板2的接触面也由第三树脂11完全地紧贴,因此,可以同时填充、同时固化混合时不能进行固化的环氧树脂和硅凝胶。
在本发明的电源模块中,电子零件安装区域14和接合区域15由一体模制成型于模制外壳3上的隔板9彻底地分离,因此,如图5的工序所示,将模制外壳3和基板2用硅胶粘合剂11粘合后,分别向电子零件安装区域14填充第一树脂7,向接合区域15填充第二树脂8,之后,可以使两种树脂同时固化。因此,相对于现有使树脂一种一种地固化的结构,能够缩短制造节拍。
根据以上说明的本发明的实施例,通过采用隔板,能够得到以下的很多的效果。
首先,通过设计成与模制外壳一体型的隔板,相对于仅将电子零件部用其他零件的隔板隔开的结构,能够减少零件个数,因此,能够提供廉价的电源模块构造。
另外,通过使用隔板,能够准确地规定密封环氧树脂的区域,因此,能够使固化后的环氧树脂的翘曲的偏差稳定,也能够使质量稳定。
另外,通过在隔板的基板接触面侧设置承接树脂用的槽,能够防止粘接隔板和基板的树脂的流出而能够紧贴,同时,能够确保隔板的截面积,因此不加厚隔板的厚度而能够使模制外壳的成形性良好。
另外,由于隔板在电源模块内起到梁的作用,因此能够减少电源模块的弯曲。
作为本发明的电源模块的最佳使用例子,图6~8表示应用于车载用的怠速熄火起动机的实施例。
在图6~8中,16为怠速熄火起动机、1为电源模块、17为起动机电机、18为磁开关、19为齿轮外壳、181为电动机端子、182为开关端子、183为电池端子、20为电动机母线、21为开关母线、22为电池母线、23为电源模块固定点。
怠速熄火起动机16由用于使与发动机啮合的小齿轮(未图示)旋转,从而使发动机(未图示)旋转的起动机电机17、用于将怠速熄火起动机16的小齿轮压向发动机使其啮合的磁开关18、本发明的电源模块1构成。
电源模块1接收来自ECU(未图示)的怠速停止指令信号,通过切换电源模块内部的功率半导体元件,控制向起动机电机17的电流,用于车辆进行怠速熄火。
起动机电机17和磁开关18由齿轮外壳19夹持外周部而固定。
另外,怠速熄火起动机利用齿轮外壳19安装于发动机上。
磁开关18具有电动机端子181、开关端子182、电池端子183,电动机端子181与起动机电机17连接,电池端子183与车辆的电池(未图示)连接。
开关端子182是用于将起动机电机17内具有的小齿轮(未图示)推出,使其与发动机啮合的部件,通过使电流流经开关端子182,驱动磁开关18内具有的杆(未图示),利用该杆,将处于起动机电机内的小齿轮(未图示)压向发动机侧。
电源模块1利用电源模块固定点23,螺纹固定到铝压铸成型的齿轮外壳19上。
在图8中,在电源模块1的模制外壳3上,作为嵌入母线,嵌入成型有电动机嵌入母线121、开关嵌入母线122、电池嵌入母线123、GND嵌入母线124,电动机嵌入母线121与用于切换向安装于基板2上的起动机电机17的导通电流的MOSFET(未图示)的漏极端子电连接。
开关嵌入母线122与用于切换向磁开关18的导通电流的MOSFET(未图示)的漏极端子电连接。电池嵌入母线123与上述MOSFET的源极端子电连接,并且与基板2内的电池线电连接。GND嵌入母线124与基板2内的GND线电连接。
在电动机嵌入母线121、开关嵌入母线122、电池嵌入母线123上,分别螺纹固定有电动机母线20、开关母线21、电池母线22。
另外,电动机母线20、开关母线21、电池母线22分别与磁开关18的电动机端子181、开关端子182、电池端子183螺纹固定。
上述GND嵌入母线124在固定电源模块固定点23的1处时,同时与齿轮外壳19连接。
磁开关18的电动机端子181与起动机电机17连接。
因此,可以通过根据来自ECU(未图示)的怠速停止指令信号,而切换上述MOSFET,使车辆怠速熄火。
工业上的可利用性
根据本发明,能够提供制造容易,且对焊锡部等的疲劳改善进行了研究的电源模块及其制造方法。尤其是能够处理大电流,因此,可以期待作为车载用的电源模块广泛地应用于车载用的怠速熄火起动机。
符号说明
1:电源模块
2:基板
3:模制外壳
41:功率半导体元件
42:芯片电容器
43:芯片电阻
44:芯片二极管
45:铝垫
46:IC
5:焊锡
6:电线
7:第一树脂
8:第二树脂
9:隔板
91:基板承接面
10:盖
11:第三树脂
12:嵌入母线
121:电动机嵌入母线
122:开关嵌入母线
123:电池嵌入母线
124:GND嵌入母线
13:树脂承接槽
14:电子零件安装区域
15:接合区域
16:怠速熄火起动机
17:起动机电机
18:磁开关
181:电动机端子
182:开关端子
183:电池端子
19:齿轮外壳
20:电动机母线
21:开关母线
22:电池母线
23:电源模块固定点

Claims (6)

1.一种电源模块,由搭载有已焊接的电子零件的基板、收纳该基板且具有用于与外部进行电连接的母线的模制外壳构成,该电源模块的特征在于,包括:
隔板,其设置于所述模制外壳,形成在所述基板上收纳电子零件的电子零件安装区域和进行与所述母线的接合作业的接合区域;
第一树脂,其被注入到所述电子零件安装区域;和
第二树脂,其被注入到所述接合区域,
所述隔板与所述模制外壳一体成形,所述模制外壳和所述隔板在与所述基板接触的面形成有用于接合的树脂承槽。
2.如权利要求1所述的电源模块,其特征在于:
以在同等的条件下能够固化的方式选定所述第一树脂和所述第二树脂的固化温度。
3.如权利要求1或2所述的电源模块,其特征在于:
作为所述第一树脂使用环氧树脂,作为第二树脂使用硅凝胶。
4.如权利要求1所述的电源模块,其特征在于:
所述隔板由相对于所述基板直立的部位和相对于所述基板平行的部位构成,该平行的部位设置于所述接合区域侧。
5.如权利要求4所述的电源模块,其特征在于:
在相对于所述基板平行的部位形成有用于接合的树脂承槽。
6.如权利要求1或5所述的电源模块,其特征在于:
在所述用于接合的树脂承槽内充填作为第三树脂的硅系树脂。
CN201080063673.1A 2010-03-24 2010-08-24 电源模块及其制造方法 Expired - Fee Related CN102754205B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010067099A JP5450192B2 (ja) 2010-03-24 2010-03-24 パワーモジュールとその製造方法
JP2010-067099 2010-03-24
PCT/JP2010/005200 WO2011117935A1 (ja) 2010-03-24 2010-08-24 パワーモジュールとその製造方法

Publications (2)

Publication Number Publication Date
CN102754205A CN102754205A (zh) 2012-10-24
CN102754205B true CN102754205B (zh) 2015-05-20

Family

ID=44672534

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080063673.1A Expired - Fee Related CN102754205B (zh) 2010-03-24 2010-08-24 电源模块及其制造方法

Country Status (5)

Country Link
US (1) US8995142B2 (zh)
EP (1) EP2551902A1 (zh)
JP (1) JP5450192B2 (zh)
CN (1) CN102754205B (zh)
WO (1) WO2011117935A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5626087B2 (ja) * 2011-04-13 2014-11-19 三菱電機株式会社 半導体装置
JP5829110B2 (ja) * 2011-11-29 2015-12-09 日立オートモティブシステムズ株式会社 電子モジュール
CN104247012B (zh) * 2012-10-01 2017-08-25 富士电机株式会社 半导体装置及其制造方法
JP2014187264A (ja) 2013-03-25 2014-10-02 Toshiba Corp 半導体装置
JP5893675B2 (ja) * 2013-06-03 2016-03-23 株式会社タムラ製作所 電子部品モジュール
JP6480098B2 (ja) * 2013-10-31 2019-03-06 三菱電機株式会社 半導体装置
JP6984155B2 (ja) 2017-04-06 2021-12-17 株式会社デンソー 電子装置
JP6421859B2 (ja) * 2017-10-10 2018-11-14 三菱電機株式会社 半導体装置
JP6967252B2 (ja) * 2017-11-09 2021-11-17 株式会社クオルテック 電子部品の製造方法、及び電子部品
EP4080551A1 (en) 2021-04-21 2022-10-26 Hitachi Energy Switzerland AG Semiconductor power module and method for manufacturing a semiconductor power module and semiconductor power device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101404275A (zh) * 2007-09-27 2009-04-08 三洋电机株式会社 电路装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0652831B2 (ja) * 1987-09-30 1994-07-06 株式会社日立製作所 自動車用電子回路装置の密封構造
JP3142398B2 (ja) * 1992-11-06 2001-03-07 三菱電機株式会社 携帯用半導体装置及びその製造方法
JPH06334070A (ja) * 1993-05-27 1994-12-02 Sanyo Electric Co Ltd 混成集積回路装置
JPH1050897A (ja) * 1996-08-02 1998-02-20 Toshiba Corp 半導体装置
JP4234259B2 (ja) * 1999-05-14 2009-03-04 富士通テン株式会社 電子機器の組合せ構造
JP3764687B2 (ja) * 2002-02-18 2006-04-12 三菱電機株式会社 電力半導体装置及びその製造方法
JP2004259992A (ja) 2003-02-26 2004-09-16 Kyocera Corp 回路モジュール
JP4030930B2 (ja) 2003-08-01 2008-01-09 株式会社日立製作所 半導体パワーモジュール
JP4492448B2 (ja) 2005-06-15 2010-06-30 株式会社日立製作所 半導体パワーモジュール
JP4525636B2 (ja) * 2006-06-09 2010-08-18 株式会社日立製作所 パワーモジュール
JP5536975B2 (ja) * 2007-01-31 2014-07-02 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置およびその製造方法
JP4972503B2 (ja) * 2007-09-11 2012-07-11 株式会社日立製作所 半導体パワーモジュール

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101404275A (zh) * 2007-09-27 2009-04-08 三洋电机株式会社 电路装置

Also Published As

Publication number Publication date
CN102754205A (zh) 2012-10-24
US8995142B2 (en) 2015-03-31
JP2011199207A (ja) 2011-10-06
WO2011117935A1 (ja) 2011-09-29
US20130010440A1 (en) 2013-01-10
EP2551902A1 (en) 2013-01-30
JP5450192B2 (ja) 2014-03-26

Similar Documents

Publication Publication Date Title
CN102754205B (zh) 电源模块及其制造方法
CN103069935B (zh) 功率半导体组件、功率模块、功率半导体组件的制造方法和功率模块的制造方法
CN101208854B (zh) 电动机的驱动电路以及空调机的室外机
CN101920721B (zh) 电子控制装置
EP3358920B1 (en) Electronic control device, and manufacturing method for vehicle-mounted electronic control device
US10349540B2 (en) Mechatronic component and method for the production thereof
US20080158830A1 (en) Electronic control apparatus
US9577488B2 (en) Drive unit integrated rotating electrical machine
US10249558B2 (en) Electronic part mounting heat-dissipating substrate
CN105493272A (zh) 半导体模块、半导体装置以及汽车
JP5239291B2 (ja) 半導体装置およびその製造方法
JP4947135B2 (ja) 半導体パッケージおよびその製造方法
CN111755863B (zh) 连接器装置
US9922906B2 (en) Electronic device and manufacturing method of electronic device
CN103958280A (zh) 电子组件
WO2019003718A1 (ja) パワー半導体装置及びそれを用いた電力変換装置
JP6391430B2 (ja) 電子制御装置およびその製造方法
CN106165089B (zh) 半导体模块以及搭载有半导体模块的驱动装置
CN109156087B (zh) 变速器控制模块及其冲裁网格装置和该装置的制成方法
CN103311231A (zh) 半导体器件及其制造方法
US20230045523A1 (en) Semiconductor device and method for manufacturing semiconductor device
JP2009260016A (ja) パワーモジュールの製造方法
WO2022215355A1 (ja) パワーモジュール、及びパワーモジュールの製造方法
JP2017022157A (ja) パワー半導体装置
CN111755390A (zh) 功率模块

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150520

Termination date: 20160824

CF01 Termination of patent right due to non-payment of annual fee