CN102738044B - 半导体制造装置用部件 - Google Patents
半导体制造装置用部件 Download PDFInfo
- Publication number
- CN102738044B CN102738044B CN201210071328.3A CN201210071328A CN102738044B CN 102738044 B CN102738044 B CN 102738044B CN 201210071328 A CN201210071328 A CN 201210071328A CN 102738044 B CN102738044 B CN 102738044B
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- power supply
- ceramic matrix
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- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000000919 ceramic Substances 0.000 claims abstract description 164
- 239000011159 matrix material Substances 0.000 claims abstract description 137
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 63
- 239000000956 alloy Substances 0.000 claims abstract description 63
- 238000009940 knitting Methods 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims description 107
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 229910000765 intermetallic Inorganic materials 0.000 claims description 19
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 208000037656 Respiratory Sounds Diseases 0.000 abstract description 17
- 239000012071 phase Substances 0.000 description 32
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 24
- 230000000052 comparative effect Effects 0.000 description 24
- 238000000034 method Methods 0.000 description 21
- 238000012360 testing method Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910006137 NiGe Inorganic materials 0.000 description 9
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 9
- 239000000395 magnesium oxide Substances 0.000 description 9
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 8
- 238000007772 electroless plating Methods 0.000 description 8
- 229910000833 kovar Inorganic materials 0.000 description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 238000007689 inspection Methods 0.000 description 6
- 230000000149 penetrating effect Effects 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910017693 AgCuTi Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- 241001269238 Data Species 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Ceramic Products (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011079462 | 2011-03-31 | ||
| JP2011-079462 | 2011-03-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102738044A CN102738044A (zh) | 2012-10-17 |
| CN102738044B true CN102738044B (zh) | 2016-04-06 |
Family
ID=46926976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210071328.3A Active CN102738044B (zh) | 2011-03-31 | 2012-03-16 | 半导体制造装置用部件 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8908349B2 (enExample) |
| JP (1) | JP5968651B2 (enExample) |
| KR (1) | KR101867625B1 (enExample) |
| CN (1) | CN102738044B (enExample) |
| TW (1) | TWI539551B (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5968651B2 (ja) * | 2011-03-31 | 2016-08-10 | 日本碍子株式会社 | 半導体製造装置用部材 |
| JP6084915B2 (ja) * | 2012-11-06 | 2017-02-22 | 日本碍子株式会社 | セラミックス部材と金属部材との接合体及びその製法 |
| JP6234076B2 (ja) * | 2013-06-17 | 2017-11-22 | 株式会社Maruwa | 接合構造体及びこれを用いた半導体製造装置 |
| KR101773749B1 (ko) * | 2015-01-20 | 2017-08-31 | 엔지케이 인슐레이터 엘티디 | 샤프트 단부 부착 구조 |
| JP6666717B2 (ja) * | 2015-12-28 | 2020-03-18 | 日本特殊陶業株式会社 | セラミックス部材 |
| JP6560150B2 (ja) * | 2016-03-28 | 2019-08-14 | 日本碍子株式会社 | ウエハ載置装置 |
| JP6693832B2 (ja) * | 2016-07-29 | 2020-05-13 | 日本特殊陶業株式会社 | セラミックス部材 |
| JP6698476B2 (ja) * | 2016-08-30 | 2020-05-27 | 京セラ株式会社 | 静電吸着用部材 |
| JP2018139255A (ja) * | 2017-02-24 | 2018-09-06 | 京セラ株式会社 | 試料保持具およびこれを用いたプラズマエッチング装置用部品 |
| JP2018203581A (ja) * | 2017-06-07 | 2018-12-27 | 日本特殊陶業株式会社 | セラミックス構造体 |
| JP6871184B2 (ja) * | 2018-01-31 | 2021-05-12 | 日機装株式会社 | 半導体発光装置の製造方法 |
| US11472748B2 (en) | 2018-06-28 | 2022-10-18 | Kyocera Corporation | Manufacturing method for a member for a semiconductor manufacturing device and member for a semiconductor manufacturing device |
| US10957520B2 (en) * | 2018-09-20 | 2021-03-23 | Lam Research Corporation | Long-life high-power terminals for substrate support with embedded heating elements |
| WO2020196339A1 (ja) | 2019-03-26 | 2020-10-01 | 日本特殊陶業株式会社 | 電極埋設部材及びその製造方法、静電チャック、セラミックス製ヒーター |
| CN113661152B (zh) * | 2019-06-26 | 2023-06-09 | 三菱综合材料株式会社 | 铜-陶瓷接合体、绝缘电路基板、铜-陶瓷接合体的制造方法及绝缘电路基板的制造方法 |
| WO2021075240A1 (ja) * | 2019-10-18 | 2021-04-22 | 京セラ株式会社 | 構造体および加熱装置 |
| CN216982138U (zh) * | 2020-09-08 | 2022-07-15 | 苏州珂玛材料科技股份有限公司 | 陶瓷加热盘引出电极的结构 |
| US12300474B2 (en) * | 2020-10-15 | 2025-05-13 | Applied Materials, Inc. | Semiconductor substrate support power transmission components |
| KR102642090B1 (ko) * | 2021-08-24 | 2024-02-29 | 주식회사 케이엔제이 | 지지 소켓 및 증착층을 포함하는 부품 제조 방법 |
| CN118339644B (zh) | 2021-12-08 | 2025-03-25 | 美科陶瓷科技有限公司 | 基座 |
| JP7623309B2 (ja) | 2022-01-12 | 2025-01-28 | 日本碍子株式会社 | ウエハ載置台 |
| JP7749475B2 (ja) * | 2022-01-28 | 2025-10-06 | 京セラ株式会社 | 接合体、締結用部品、碍子および電流導入端子 |
| CN114513869B (zh) * | 2022-02-23 | 2024-03-29 | 常州联德陶业有限公司 | 一种氮化铝陶瓷器件用接线端子及其固定工艺 |
| JP7634493B2 (ja) * | 2022-03-03 | 2025-02-21 | 日本碍子株式会社 | 給電部材及びウエハ載置台 |
| KR102619089B1 (ko) * | 2022-10-31 | 2023-12-29 | 주식회사 미코세라믹스 | 세라믹 서셉터 |
| WO2025052499A1 (ja) | 2023-09-04 | 2025-03-13 | 日本碍子株式会社 | ウエハ載置台 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1307386A (zh) * | 2000-01-28 | 2001-08-08 | 富士康(昆山)电脑接插件有限公司 | 电连接器端子制造方法及其制造模具 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5707715A (en) * | 1996-08-29 | 1998-01-13 | L. Pierre deRochemont | Metal ceramic composites with improved interfacial properties and methods to make such composites |
| US6143432A (en) * | 1998-01-09 | 2000-11-07 | L. Pierre deRochemont | Ceramic composites with improved interfacial properties and methods to make such composites |
| JP3746594B2 (ja) * | 1997-06-20 | 2006-02-15 | 日本碍子株式会社 | セラミックスの接合構造およびその製造方法 |
| JP3718380B2 (ja) * | 1999-08-18 | 2005-11-24 | 株式会社日立製作所 | はんだ接続構造を有する回路装置およびその製造方法 |
| KR100443277B1 (ko) * | 2000-02-07 | 2004-08-04 | 티디케이가부시기가이샤 | 복합기판, 이를 사용한 박막발광소자 및 그 제조방법 |
| JP2001237304A (ja) * | 2000-02-21 | 2001-08-31 | Ibiden Co Ltd | 半導体製造・検査装置用セラミック基板 |
| JP2002293655A (ja) | 2001-03-29 | 2002-10-09 | Ngk Insulators Ltd | 金属端子とセラミック部材との接合構造、金属部材とセラミック部材との接合構造および金属端子とセラミック部材との接合材 |
| JP3949459B2 (ja) * | 2002-01-25 | 2007-07-25 | 日本碍子株式会社 | 異種材料の接合体及びその製造方法 |
| US7252872B2 (en) * | 2003-01-29 | 2007-08-07 | Ngk Insulators, Ltd. | Joined structures of ceramics |
| JP4184829B2 (ja) * | 2003-02-25 | 2008-11-19 | 京セラ株式会社 | 静電チャックの製造方法 |
| JP4967447B2 (ja) * | 2006-05-17 | 2012-07-04 | 株式会社日立製作所 | パワー半導体モジュール |
| US7816155B2 (en) * | 2007-07-06 | 2010-10-19 | Jds Uniphase Corporation | Mounted semiconductor device and a method for making the same |
| JP5174582B2 (ja) | 2007-08-30 | 2013-04-03 | 日本碍子株式会社 | 接合構造体 |
| TWI450353B (zh) * | 2008-01-08 | 2014-08-21 | Ngk Insulators Ltd | A bonding structure and a semiconductor manufacturing apparatus |
| JP2010263050A (ja) * | 2009-05-01 | 2010-11-18 | Showa Denko Kk | 発光ダイオード及びその製造方法、並びに発光ダイオードランプ |
| JP5968651B2 (ja) * | 2011-03-31 | 2016-08-10 | 日本碍子株式会社 | 半導体製造装置用部材 |
-
2012
- 2012-03-15 JP JP2012058586A patent/JP5968651B2/ja active Active
- 2012-03-15 US US13/420,810 patent/US8908349B2/en active Active
- 2012-03-16 CN CN201210071328.3A patent/CN102738044B/zh active Active
- 2012-03-16 TW TW101109024A patent/TWI539551B/zh active
- 2012-03-16 KR KR1020120026997A patent/KR101867625B1/ko active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1307386A (zh) * | 2000-01-28 | 2001-08-08 | 富士康(昆山)电脑接插件有限公司 | 电连接器端子制造方法及其制造模具 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI539551B (zh) | 2016-06-21 |
| JP2012216786A (ja) | 2012-11-08 |
| KR101867625B1 (ko) | 2018-06-15 |
| JP5968651B2 (ja) | 2016-08-10 |
| TW201240014A (en) | 2012-10-01 |
| KR20120112036A (ko) | 2012-10-11 |
| US8908349B2 (en) | 2014-12-09 |
| CN102738044A (zh) | 2012-10-17 |
| US20120250211A1 (en) | 2012-10-04 |
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