JP6084915B2 - セラミックス部材と金属部材との接合体及びその製法 - Google Patents
セラミックス部材と金属部材との接合体及びその製法 Download PDFInfo
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Description
アルミナ又は窒化アルミニウムのセラミックス部材に設けた凹部に、Ni被膜、Au被膜又はNi−Au被膜(下地がNi)を有するMo又はTi製の金属部材を接合層を介して接合した接合体であって、
前記接合層は、Au,Ge,Ag,Cu及びTiを含有し、前記凹部の側面の少なくとも一部及び底面と接しており、
前記接合層のうち前記セラミックス部材との接合界面には、Tiがリッチに存在しており、
前記接合体を前記接合体の厚み方向に切断したとき、前記接合層の断面積に占める前記気孔の断面積の総和の割合(気孔率)が0.1〜15%
のものである。
(a)凹部が設けられたアルミナ又は窒化アルミニウムのセラミックス部材を用意する工程と、
(b)前記凹部の側面の少なくとも一部及び底面にAg−Cu−Tiペーストを塗布し、真空雰囲気で800℃〜900℃に加熱することにより、前記凹部の側面の少なくとも一部及び底面にメタライズ層を形成する工程と、
(c)前記メタライズ層を形成した前記凹部の底面にAu−Geシートをセットし、その上にNi被膜、Au被膜又はNi−Au被膜(下地がNi)を有するMo又はTi製の金属部材をセットし、真空雰囲気で360〜450℃に加熱することにより、前記メタライズ層と前記Au−Geシートとが渾然一体となった接合層を前記金属部材と前記セラミックス部材との間に形成する工程と、
を含むものである。
直径6mm、深さ0.5mmの凹部(端子穴)が設けられたアルミナセラミックス部材を用意した。このアルミナセラミックス部材の凹部の周りをマスキングテープでマスキングし、その凹部の側面及び底面にディスペンサー装置によりAg−Cu−Tiペーストを塗布した。塗布完了後、10分自然放置し、その後、クリーンオーブンで120℃(物温)で1時間乾燥した。マスキングテープをはがし、焼成温度850℃、焼成時間10分、真空度5×10-5Torr以下で焼き付けを行った。これにより、凹部の側面及び底面にAg−Cu−Tiのメタライズ層が形成された。メタライズ層の膜厚は30μmであった。なお、Ag−Cu−TiペーストのTi含有率は1.7wt%とした。
上述した代表例において、凹部にメタライズ層を形成したときの膜厚が表1に示す値となるように接合体を作製した。作製した接合体の破断強度を測定すると共に、接合直後の接合体のアルミナセラミックス部材にクラックが見られるか否かを検査した。その結果を表1に示す。なお、破断強度は、引張破断荷重と同義であり、アルミナセラミックス部材が下になるように接合体を支持台に上下動しないようにしっかりと固定し、端子の上面から垂直下向きに設けられたネジ穴に引張棒の先端をねじ込み、この引張棒に垂直上向きの荷重を加え、接合層が破断したときの荷重を破断強度とした。
上述した代表例において、気孔率が表1に示す0〜35%となるようにAg−Cu−Tiペースト中のTi含有率を調整して接合体を作製した。作製した当初の接合体の破断強度とクラックの有無を測定した。また、熱サイクル試験後の接合体の破断強度とクラックの有無も測定した。熱サイクル試験は、室温から200℃まで加熱したあと室温に冷却する操作を1サイクルとし、これを1000サイクル繰り返した。その結果を表2に示す。
Claims (6)
- アルミナ又は窒化アルミニウムのセラミックス部材に設けた凹部に、Ni被膜、Au被膜又はNi被膜を下地としてその上にAu被膜を形成した積層被膜を有するMo又はTi製の金属部材を接合層を介して接合した接合体であって、
前記接合層は、Au,Ge,Ag,Cu及びTiを含有し、前記凹部の側面の少なくとも一部及び底面と接しており、
前記接合層のうち前記セラミックス部材との接合界面には、Tiがリッチに存在しており、
前記接合体を前記接合体の厚み方向に切断したとき、前記接合層の断面積に占める気孔の断面積の総和の割合(気孔率)が0.1〜15%である
接合体。 - Tiは、前記接合層の内部に存在する前記気孔の周囲に凝集している、
請求項1に記載の接合体。 - (a)凹部が設けられたアルミナ又は窒化アルミニウムのセラミックス部材を用意する工程と、
(b)前記凹部の側面の少なくとも一部及び底面にAg−Cu−Tiペーストを塗布し、真空雰囲気で800℃〜900℃に加熱することにより、前記凹部の側面の少なくとも一部及び底面にメタライズ層を形成する工程と、
(c)前記メタライズ層を形成した前記凹部の底面にAu−Geシートをセットし、その上にNi被膜、Au被膜又はNi被膜を下地としてその上にAu被膜を形成した積層被膜を有するMo又はTi製の金属部材をセットし、真空雰囲気で360〜450℃に加熱することにより、前記メタライズ層と前記Au−Geシートとが渾然一体となった接合層が前記金属部材と前記セラミックス部材との間に形成された接合体を得る工程と、
を含み、
前記接合体は、前記接合体を前記接合体の厚み方向に切断したとき、前記接合層の断面積に占める気孔の断面積の総和の割合(気孔率)が0.1〜15%である、
接合体の製法。 - 前記工程(b)では、前記メタライズ層の厚みを5〜75μmとする、
請求項3に記載の接合体の製法。 - 前記工程(b)では、前記Ag−Cu−TiペーストはTiを1.50〜2.10wt%含有している、
請求項3又は4に記載の接合体の製法。 - 前記接合体は、請求項1又は2に記載の接合体である、
請求項3〜5のいずれか1項に記載の接合体の製法。
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US201261722907P | 2012-11-06 | 2012-11-06 | |
US61/722907 | 2012-11-06 |
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WO2015166789A1 (ja) * | 2014-04-30 | 2015-11-05 | 日本碍子株式会社 | セラミックス部材と金属部材との接合体及びその製法 |
JP6306736B2 (ja) * | 2014-10-29 | 2018-04-04 | 京セラ株式会社 | 蓄熱体 |
JP6847671B2 (ja) * | 2017-01-13 | 2021-03-24 | 日本特殊陶業株式会社 | セラミックス部材 |
KR102506712B1 (ko) * | 2021-02-03 | 2023-03-07 | 주식회사 오성테크 | 금형공구강 접합방법과 이와 같은 방법에 의해 제조된 금형 |
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US3140536A (en) * | 1961-11-15 | 1964-07-14 | Rca Corp | Materials for and method of bonding |
JPS58151992A (ja) * | 1982-03-05 | 1983-09-09 | Citizen Watch Co Ltd | 金ロウ材 |
JPH01226777A (ja) * | 1988-03-05 | 1989-09-11 | Nippon Steel Corp | 金属片を備えたセラミックス部材およびセラミックス部材を金属材料に接合する方法 |
JP3288922B2 (ja) * | 1996-03-14 | 2002-06-04 | 日本碍子株式会社 | 接合体およびその製造方法 |
JP3890539B2 (ja) * | 1996-04-12 | 2007-03-07 | Dowaホールディングス株式会社 | セラミックス−金属複合回路基板 |
JP4021575B2 (ja) | 1999-01-28 | 2007-12-12 | 日本碍子株式会社 | セラミックス部材と金属部材との接合体およびその製造方法 |
JP2000286038A (ja) * | 1999-03-31 | 2000-10-13 | Ngk Insulators Ltd | セラミックヒータと電極端子との接合構造およびその接合方法 |
JP2002293655A (ja) * | 2001-03-29 | 2002-10-09 | Ngk Insulators Ltd | 金属端子とセラミック部材との接合構造、金属部材とセラミック部材との接合構造および金属端子とセラミック部材との接合材 |
AU2002318144A1 (en) * | 2001-05-24 | 2003-01-29 | Fry's Metals, Inc. | Thermal interface material and heat sink configuration |
JP3989254B2 (ja) * | 2002-01-25 | 2007-10-10 | 日本碍子株式会社 | 異種材料接合体及びその製造方法 |
JP3967278B2 (ja) * | 2003-03-07 | 2007-08-29 | 日本碍子株式会社 | 接合部材及び静電チャック |
US8908349B2 (en) * | 2011-03-31 | 2014-12-09 | Ngk Insulators, Ltd. | Member for semiconductor manufacturing apparatus |
JP6082524B2 (ja) * | 2012-03-21 | 2017-02-15 | 日本碍子株式会社 | セラミックス部材と金属部材との接合体及びその製法 |
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- 2013-10-31 JP JP2013226645A patent/JP6084915B2/ja active Active
- 2013-11-04 US US14/070,862 patent/US9126384B2/en active Active
- 2013-11-04 KR KR1020130132819A patent/KR102134327B1/ko active IP Right Grant
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CN103804009A (zh) | 2014-05-21 |
US9126384B2 (en) | 2015-09-08 |
KR102134327B1 (ko) | 2020-07-16 |
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