JP5968651B2 - 半導体製造装置用部材 - Google Patents
半導体製造装置用部材 Download PDFInfo
- Publication number
- JP5968651B2 JP5968651B2 JP2012058586A JP2012058586A JP5968651B2 JP 5968651 B2 JP5968651 B2 JP 5968651B2 JP 2012058586 A JP2012058586 A JP 2012058586A JP 2012058586 A JP2012058586 A JP 2012058586A JP 5968651 B2 JP5968651 B2 JP 5968651B2
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- JP
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- bonding
- power supply
- ceramic substrate
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- semiconductor manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 239000000919 ceramic Substances 0.000 claims description 162
- 239000000758 substrate Substances 0.000 claims description 111
- 239000000463 material Substances 0.000 claims description 102
- 229910045601 alloy Inorganic materials 0.000 claims description 60
- 239000000956 alloy Substances 0.000 claims description 60
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 229910000765 intermetallic Inorganic materials 0.000 claims description 19
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000012071 phase Substances 0.000 description 49
- 238000005304 joining Methods 0.000 description 35
- 230000000052 comparative effect Effects 0.000 description 23
- 238000000034 method Methods 0.000 description 23
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 12
- 238000002844 melting Methods 0.000 description 12
- 230000008018 melting Effects 0.000 description 12
- 238000007747 plating Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 10
- 229910006137 NiGe Inorganic materials 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 8
- 229910000833 kovar Inorganic materials 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- 238000009864 tensile test Methods 0.000 description 8
- 238000005219 brazing Methods 0.000 description 7
- 238000007772 electroless plating Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000395 magnesium oxide Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 230000032798 delamination Effects 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910017693 AgCuTi Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- 229910017435 S2 In Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- VXPLXMJHHKHSOA-UHFFFAOYSA-N propham Chemical compound CC(C)OC(=O)NC1=CC=CC=C1 VXPLXMJHHKHSOA-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Ceramic Products (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012058586A JP5968651B2 (ja) | 2011-03-31 | 2012-03-15 | 半導体製造装置用部材 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011079462 | 2011-03-31 | ||
| JP2011079462 | 2011-03-31 | ||
| JP2012058586A JP5968651B2 (ja) | 2011-03-31 | 2012-03-15 | 半導体製造装置用部材 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012216786A JP2012216786A (ja) | 2012-11-08 |
| JP2012216786A5 JP2012216786A5 (enExample) | 2015-01-22 |
| JP5968651B2 true JP5968651B2 (ja) | 2016-08-10 |
Family
ID=46926976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012058586A Active JP5968651B2 (ja) | 2011-03-31 | 2012-03-15 | 半導体製造装置用部材 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8908349B2 (enExample) |
| JP (1) | JP5968651B2 (enExample) |
| KR (1) | KR101867625B1 (enExample) |
| CN (1) | CN102738044B (enExample) |
| TW (1) | TWI539551B (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5968651B2 (ja) * | 2011-03-31 | 2016-08-10 | 日本碍子株式会社 | 半導体製造装置用部材 |
| JP6084915B2 (ja) * | 2012-11-06 | 2017-02-22 | 日本碍子株式会社 | セラミックス部材と金属部材との接合体及びその製法 |
| JP6234076B2 (ja) * | 2013-06-17 | 2017-11-22 | 株式会社Maruwa | 接合構造体及びこれを用いた半導体製造装置 |
| WO2016117424A1 (ja) * | 2015-01-20 | 2016-07-28 | 日本碍子株式会社 | シャフト端部取付構造 |
| JP6666717B2 (ja) * | 2015-12-28 | 2020-03-18 | 日本特殊陶業株式会社 | セラミックス部材 |
| JP6560150B2 (ja) * | 2016-03-28 | 2019-08-14 | 日本碍子株式会社 | ウエハ載置装置 |
| JP6693832B2 (ja) * | 2016-07-29 | 2020-05-13 | 日本特殊陶業株式会社 | セラミックス部材 |
| JP6698476B2 (ja) * | 2016-08-30 | 2020-05-27 | 京セラ株式会社 | 静電吸着用部材 |
| JP2018139255A (ja) * | 2017-02-24 | 2018-09-06 | 京セラ株式会社 | 試料保持具およびこれを用いたプラズマエッチング装置用部品 |
| JP2018203581A (ja) * | 2017-06-07 | 2018-12-27 | 日本特殊陶業株式会社 | セラミックス構造体 |
| JP6871184B2 (ja) * | 2018-01-31 | 2021-05-12 | 日機装株式会社 | 半導体発光装置の製造方法 |
| KR20210008038A (ko) | 2018-06-28 | 2021-01-20 | 교세라 가부시키가이샤 | 반도체 제조 장치용 부재의 제조 방법 및 반도체 제조 장치용 부재 |
| US10957520B2 (en) * | 2018-09-20 | 2021-03-23 | Lam Research Corporation | Long-life high-power terminals for substrate support with embedded heating elements |
| WO2020196339A1 (ja) | 2019-03-26 | 2020-10-01 | 日本特殊陶業株式会社 | 電極埋設部材及びその製造方法、静電チャック、セラミックス製ヒーター |
| US20220051965A1 (en) * | 2019-06-26 | 2022-02-17 | Mitsubishi Materials Corporation | Copper/ceramic joined body, insulation circuit board, copper/ceramic joined body production method, and insulation circuit board manufacturing method |
| WO2021075240A1 (ja) * | 2019-10-18 | 2021-04-22 | 京セラ株式会社 | 構造体および加熱装置 |
| CN114158147A (zh) * | 2020-09-08 | 2022-03-08 | 苏州珂玛材料科技股份有限公司 | 陶瓷加热盘引出电极连接结构及其连接方法 |
| US12300474B2 (en) * | 2020-10-15 | 2025-05-13 | Applied Materials, Inc. | Semiconductor substrate support power transmission components |
| KR102642090B1 (ko) * | 2021-08-24 | 2024-02-29 | 주식회사 케이엔제이 | 지지 소켓 및 증착층을 포함하는 부품 제조 방법 |
| KR102479488B1 (ko) | 2021-12-08 | 2022-12-21 | 주식회사 미코세라믹스 | 극저온 서셉터 및 그에 사용되는 전기적 커넥터 어셈블리 |
| JP7623309B2 (ja) | 2022-01-12 | 2025-01-28 | 日本碍子株式会社 | ウエハ載置台 |
| JP7749475B2 (ja) * | 2022-01-28 | 2025-10-06 | 京セラ株式会社 | 接合体、締結用部品、碍子および電流導入端子 |
| CN114513869B (zh) * | 2022-02-23 | 2024-03-29 | 常州联德陶业有限公司 | 一种氮化铝陶瓷器件用接线端子及其固定工艺 |
| JP7634493B2 (ja) * | 2022-03-03 | 2025-02-21 | 日本碍子株式会社 | 給電部材及びウエハ載置台 |
| KR102619089B1 (ko) * | 2022-10-31 | 2023-12-29 | 주식회사 미코세라믹스 | 세라믹 서셉터 |
| WO2025052499A1 (ja) | 2023-09-04 | 2025-03-13 | 日本碍子株式会社 | ウエハ載置台 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5707715A (en) * | 1996-08-29 | 1998-01-13 | L. Pierre deRochemont | Metal ceramic composites with improved interfacial properties and methods to make such composites |
| US6143432A (en) * | 1998-01-09 | 2000-11-07 | L. Pierre deRochemont | Ceramic composites with improved interfacial properties and methods to make such composites |
| JP3746594B2 (ja) * | 1997-06-20 | 2006-02-15 | 日本碍子株式会社 | セラミックスの接合構造およびその製造方法 |
| JP3718380B2 (ja) * | 1999-08-18 | 2005-11-24 | 株式会社日立製作所 | はんだ接続構造を有する回路装置およびその製造方法 |
| US6439975B1 (en) * | 2000-01-28 | 2002-08-27 | Hon Hai Precision Ind. Co., Ltd. | Method for forming contact of electrical connector and press die for practicing the method |
| KR100443277B1 (ko) * | 2000-02-07 | 2004-08-04 | 티디케이가부시기가이샤 | 복합기판, 이를 사용한 박막발광소자 및 그 제조방법 |
| JP2001237304A (ja) * | 2000-02-21 | 2001-08-31 | Ibiden Co Ltd | 半導体製造・検査装置用セラミック基板 |
| JP2002293655A (ja) | 2001-03-29 | 2002-10-09 | Ngk Insulators Ltd | 金属端子とセラミック部材との接合構造、金属部材とセラミック部材との接合構造および金属端子とセラミック部材との接合材 |
| JP3949459B2 (ja) * | 2002-01-25 | 2007-07-25 | 日本碍子株式会社 | 異種材料の接合体及びその製造方法 |
| US7252872B2 (en) * | 2003-01-29 | 2007-08-07 | Ngk Insulators, Ltd. | Joined structures of ceramics |
| JP4184829B2 (ja) * | 2003-02-25 | 2008-11-19 | 京セラ株式会社 | 静電チャックの製造方法 |
| JP4967447B2 (ja) * | 2006-05-17 | 2012-07-04 | 株式会社日立製作所 | パワー半導体モジュール |
| US7816155B2 (en) * | 2007-07-06 | 2010-10-19 | Jds Uniphase Corporation | Mounted semiconductor device and a method for making the same |
| JP5174582B2 (ja) * | 2007-08-30 | 2013-04-03 | 日本碍子株式会社 | 接合構造体 |
| TWI450353B (zh) * | 2008-01-08 | 2014-08-21 | Ngk Insulators Ltd | A bonding structure and a semiconductor manufacturing apparatus |
| JP2010263050A (ja) * | 2009-05-01 | 2010-11-18 | Showa Denko Kk | 発光ダイオード及びその製造方法、並びに発光ダイオードランプ |
| JP5968651B2 (ja) * | 2011-03-31 | 2016-08-10 | 日本碍子株式会社 | 半導体製造装置用部材 |
-
2012
- 2012-03-15 JP JP2012058586A patent/JP5968651B2/ja active Active
- 2012-03-15 US US13/420,810 patent/US8908349B2/en active Active
- 2012-03-16 CN CN201210071328.3A patent/CN102738044B/zh active Active
- 2012-03-16 TW TW101109024A patent/TWI539551B/zh active
- 2012-03-16 KR KR1020120026997A patent/KR101867625B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012216786A (ja) | 2012-11-08 |
| CN102738044A (zh) | 2012-10-17 |
| US20120250211A1 (en) | 2012-10-04 |
| KR20120112036A (ko) | 2012-10-11 |
| CN102738044B (zh) | 2016-04-06 |
| TWI539551B (zh) | 2016-06-21 |
| KR101867625B1 (ko) | 2018-06-15 |
| US8908349B2 (en) | 2014-12-09 |
| TW201240014A (en) | 2012-10-01 |
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