CN102712754A - 表护层组合物及与其相关的方法 - Google Patents

表护层组合物及与其相关的方法 Download PDF

Info

Publication number
CN102712754A
CN102712754A CN2010800517836A CN201080051783A CN102712754A CN 102712754 A CN102712754 A CN 102712754A CN 2010800517836 A CN2010800517836 A CN 2010800517836A CN 201080051783 A CN201080051783 A CN 201080051783A CN 102712754 A CN102712754 A CN 102712754A
Authority
CN
China
Prior art keywords
dianhydride
polyimide
film
submicron
diamine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800517836A
Other languages
English (en)
Chinese (zh)
Inventor
B·C·奥曼
M·L·邓巴
T·何
K·库塔基斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of CN102712754A publication Critical patent/CN102712754A/zh
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/34Layered products comprising a layer of synthetic resin comprising polyamides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1042Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1046Polyimides containing oxygen in the form of ether bonds in the main chain
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1046Polyimides containing oxygen in the form of ether bonds in the main chain
    • C08G73/105Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the diamino moiety
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C08G73/1071Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/295Organic, e.g. plastic containing a filler
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0346Organic insulating material consisting of one material containing N
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/0353Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/0373Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/016Additives defined by their aspect ratio
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00Use of ingredients characterised by shape
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00Use of ingredients characterised by shape
    • C08K7/02Fibres or whiskers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00Use of ingredients characterised by shape
    • C08K7/02Fibres or whiskers
    • C08K7/04Fibres or whiskers inorganic
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00Use of ingredients characterised by shape
    • C08K7/02Fibres or whiskers
    • C08K7/04Fibres or whiskers inorganic
    • C08K7/08Oxygen-containing compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • H01L2224/0231Manufacturing methods of the redistribution layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • H01L2224/0231Manufacturing methods of the redistribution layers
    • H01L2224/02319Manufacturing methods of the redistribution layers by using a preform
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • H01L2224/0233Structure of the redistribution layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • H01L2224/0233Structure of the redistribution layers
    • H01L2224/02335Free-standing redistribution layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • H01L2224/0236Shape of the insulating layers therebetween
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • H01L2224/024Material of the insulating layers therebetween
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01012Magnesium [Mg]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0102Calcium [Ca]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01021Scandium [Sc]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01057Lanthanum [La]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12032Schottky diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/0154Polyimide
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0206Materials
    • H05K2201/0209Inorganic, non-metallic particles
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/25Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/25Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/256Heavy metal or aluminum or compound thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/25Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/256Heavy metal or aluminum or compound thereof
    • Y10T428/257Iron oxide or aluminum oxide
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/25Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/259Silicic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Laminated Bodies (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Thin Film Transistor (AREA)
  • Inorganic Insulating Materials (AREA)
  • Organic Insulating Materials (AREA)
  • Insulating Bodies (AREA)
  • Photovoltaic Devices (AREA)
  • Wire Bonding (AREA)
CN2010800517836A 2009-11-20 2010-11-19 表护层组合物及与其相关的方法 Pending CN102712754A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26326609P 2009-11-20 2009-11-20
US61/263,266 2009-11-20
PCT/US2010/057423 WO2011063229A1 (en) 2009-11-20 2010-11-19 Coverlay compositions and methods relating thereto

Publications (1)

Publication Number Publication Date
CN102712754A true CN102712754A (zh) 2012-10-03

Family

ID=43458223

Family Applications (6)

Application Number Title Priority Date Filing Date
CN201080051264.XA Expired - Fee Related CN102712753B (zh) 2009-11-20 2010-11-19 热稳定的且尺寸稳定的聚酰亚胺薄膜及与其相关的方法
CN2010800517836A Pending CN102712754A (zh) 2009-11-20 2010-11-19 表护层组合物及与其相关的方法
CN2010800602792A Pending CN102803345A (zh) 2009-11-20 2010-11-19 薄膜晶体管组合物及其相关方法
CN2010800609325A Pending CN102791769A (zh) 2009-11-20 2010-11-19 线材包裹组合物及其相关方法
CN2010800517840A Pending CN102668108A (zh) 2009-11-20 2010-11-19 包含聚酰亚胺膜和电极的组合件以及与它们相关的方法
CN2010800610464A Pending CN102714192A (zh) 2009-11-20 2010-11-19 用于半导体封装应用中的互连导电物薄膜及其相关方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201080051264.XA Expired - Fee Related CN102712753B (zh) 2009-11-20 2010-11-19 热稳定的且尺寸稳定的聚酰亚胺薄膜及与其相关的方法

Family Applications After (4)

Application Number Title Priority Date Filing Date
CN2010800602792A Pending CN102803345A (zh) 2009-11-20 2010-11-19 薄膜晶体管组合物及其相关方法
CN2010800609325A Pending CN102791769A (zh) 2009-11-20 2010-11-19 线材包裹组合物及其相关方法
CN2010800517840A Pending CN102668108A (zh) 2009-11-20 2010-11-19 包含聚酰亚胺膜和电极的组合件以及与它们相关的方法
CN2010800610464A Pending CN102714192A (zh) 2009-11-20 2010-11-19 用于半导体封装应用中的互连导电物薄膜及其相关方法

Country Status (6)

Country Link
US (6) US20120231257A1 (enExample)
EP (6) EP2501741A1 (enExample)
JP (6) JP2013511601A (enExample)
KR (6) KR20120096003A (enExample)
CN (6) CN102712753B (enExample)
WO (6) WO2011063229A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108300363A (zh) * 2017-09-05 2018-07-20 广州美维电子有限公司 一种应用于pcb制作的保护胶膜及其制备方法和使用方法
CN108342082A (zh) * 2018-02-27 2018-07-31 深圳市华星光电半导体显示技术有限公司 一种具有表面保护层的柔性材料的制备方法
CN109486189A (zh) * 2018-11-09 2019-03-19 李梅 一种用于fpc行业的tpi薄膜及其制备方法
US11059204B2 (en) 2018-02-27 2021-07-13 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Method for manufacturing flexible material having surface protecting layer
CN109880094B (zh) * 2019-03-12 2021-08-24 黄山金石木塑料科技有限公司 一种防静电/导电型聚酰亚胺树脂及其制备方法与应用

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102712753B (zh) 2009-11-20 2015-08-26 E·I·内穆尔杜邦公司 热稳定的且尺寸稳定的聚酰亚胺薄膜及与其相关的方法
KR101125567B1 (ko) * 2009-12-24 2012-03-22 삼성모바일디스플레이주식회사 고분자 기판 및 그 제조 방법과 상기 고분자 기판을 포함하는 표시 장치 및 그 제조 방법
KR101793047B1 (ko) * 2010-08-03 2017-11-03 삼성디스플레이 주식회사 플렉서블 디스플레이 및 이의 제조 방법
JP5362752B2 (ja) * 2011-01-26 2013-12-11 Jfeケミカル株式会社 ポリアミド酸組成物、ポリイミドおよびポリイミドフィルムならびにそれらの製造方法
CA2838112A1 (en) * 2011-06-09 2012-12-13 Sumitomo Seika Chemicals Co., Ltd. Non-combustible film, dispersion liquid for non-combustible films, method for producing non-combustible film, solar cell back sheet, flexible board, and solar cell
JP2013131423A (ja) * 2011-12-22 2013-07-04 Hitachi Cable Ltd 絶縁電線及びコイル
WO2013192472A1 (en) * 2012-06-22 2013-12-27 E. I. Du Pont De Nemours And Company Polyimide metal clad laminate
WO2013192467A1 (en) * 2012-06-22 2013-12-27 E. I. Du Pont De Nemours And Company Circuit board
KR20140029987A (ko) * 2012-08-31 2014-03-11 삼성디스플레이 주식회사 캐리어 기판, 이의 제조방법 및 이를 이용한 플렉서블 디스플레이 장치의 제조방법
JP5931654B2 (ja) * 2012-09-03 2016-06-08 日立金属株式会社 絶縁電線及びそれを用いたコイル
KR101987197B1 (ko) * 2012-10-04 2019-06-11 삼성디스플레이 주식회사 플렉시블 디스플레이 장치의 제조방법
JP5761151B2 (ja) 2012-10-16 2015-08-12 日立金属株式会社 絶縁電線及びコイル
CN103897391B (zh) * 2012-12-31 2017-04-12 中原工学院 薄膜太阳能电池用光固化聚酰亚胺膜及其制备方法
CN103078010B (zh) * 2013-02-03 2016-12-28 电子科技大学 一种铜锌锡硫薄膜太阳能电池的全非真空工艺制备方法
WO2014141322A1 (ja) * 2013-03-14 2014-09-18 三井化学株式会社 車両船舶のモーター巻線用の角型電線、巻線コイル、およびモーター
US9553228B2 (en) * 2013-05-17 2017-01-24 Kaneka Corporation Solar cell, production method therefor, and solar cell module
EP3006209B1 (en) * 2013-05-31 2022-12-21 Kaneka Corporation Insulated coating material and use of same
ES2703147T3 (es) * 2013-07-09 2019-03-07 Evonik Degussa Gmbh Polímeros electroactivos, procedimiento de fabricación de los mismos, electrodo y uso de los mismos
ES2768269T3 (es) 2013-12-03 2020-06-22 Abb Schweiz Ag Material de polímero dieléctrico multi-estratificado, condensador, uso del material y método de formación del mismo
KR102151077B1 (ko) 2014-01-27 2020-09-02 에스케이이노베이션 주식회사 폴리이미드 복합체 필름 구조 및 제조 공정
US20150257296A1 (en) * 2014-03-07 2015-09-10 Taiflex Scientific Co., Ltd. Cover layer with high thermal resistance and high reflectivity for a printed circuit board
KR102220012B1 (ko) 2014-04-04 2021-02-26 에스케이이노베이션 주식회사 폴리이미드 복합기판의 제조방법 및 이로 제조된 폴리이미드 복합기판
JP6639410B2 (ja) 2014-11-27 2020-02-05 株式会社カネカ 耐摩耗性の優れる絶縁被覆材料
WO2016084661A1 (ja) 2014-11-27 2016-06-02 株式会社カネカ 耐摩耗性の優れる絶縁被覆材料
KR102401764B1 (ko) * 2014-12-31 2022-05-26 하나 마이크론(주) 전자 소자 및 이의 제조 방법
US9633883B2 (en) 2015-03-20 2017-04-25 Rohinni, LLC Apparatus for transfer of semiconductor devices
US9947895B2 (en) 2015-06-17 2018-04-17 Universal Display Corporation Flexible AMOLED display
KR102460768B1 (ko) * 2015-09-24 2022-10-28 아사히 가세이 가부시키가이샤 폴리이미드 전구체, 수지 조성물 및 수지 필름의 제조 방법
WO2017197077A1 (en) * 2016-05-12 2017-11-16 E I Du Pont De Nemours And Company Polyimide compositions and a polyimide test socket housing
CN107956206A (zh) * 2016-10-14 2018-04-24 杜邦公司 用于隧道中拦截落石的防护网
US10141215B2 (en) 2016-11-03 2018-11-27 Rohinni, LLC Compliant needle for direct transfer of semiconductor devices
US10504767B2 (en) 2016-11-23 2019-12-10 Rohinni, LLC Direct transfer apparatus for a pattern array of semiconductor device die
US10471545B2 (en) 2016-11-23 2019-11-12 Rohinni, LLC Top-side laser for direct transfer of semiconductor devices
US10062588B2 (en) 2017-01-18 2018-08-28 Rohinni, LLC Flexible support substrate for transfer of semiconductor devices
US10410905B1 (en) 2018-05-12 2019-09-10 Rohinni, LLC Method and apparatus for direct transfer of multiple semiconductor devices
US11094571B2 (en) 2018-09-28 2021-08-17 Rohinni, LLC Apparatus to increase transferspeed of semiconductor devices with micro-adjustment
CN113170576B (zh) * 2019-01-21 2024-10-01 株式会社村田制作所 伸缩性布线基板
EP3825343A1 (en) 2019-11-19 2021-05-26 Rohm and Haas Electronic Materials LLC Tunable refractive index polymers
US11746184B2 (en) 2019-11-19 2023-09-05 Rohm And Haas Electronic Materials Llc Polyimide-polyarylene polymers
KR102396418B1 (ko) * 2019-11-29 2022-05-12 피아이첨단소재 주식회사 폴리이미드 필름, 이의 제조 방법, 및 이를 포함한 연성 금속박 적층판
CN111732910B (zh) 2020-06-30 2022-05-27 晶科绿能(上海)管理有限公司 复合封装材料和用其封装的光伏组件
CN113912878A (zh) * 2020-07-08 2022-01-11 达迈科技股份有限公司 白色聚酰亚胺膜及其制造方法
KR102414419B1 (ko) * 2020-08-27 2022-06-30 피아이첨단소재 주식회사 그라파이트 시트용 폴리이미드 필름 제조방법 및 그라파이트 시트 제조방법
CN112812559A (zh) * 2021-01-28 2021-05-18 苏州泰仑电子材料有限公司 绝缘pi膜及其制备方法
JPWO2022255337A1 (enExample) * 2021-05-31 2022-12-08
KR102681148B1 (ko) 2021-09-16 2024-07-04 주식회사 에코세미텍 솔더링 환원 시스템
US20230317662A1 (en) * 2022-03-31 2023-10-05 Texas Instruments Incorporated Electronic device with sensor face stress protection
CN115367785A (zh) * 2022-08-23 2022-11-22 安徽工程大学 高效光催化剂微/纳刺球状硫化铟及其制备方法和应用、硫化铟复合膜及其制备方法和应用
KR20250047110A (ko) 2023-09-27 2025-04-03 앱솔릭스 인코포레이티드 패키징 기판 및 이의 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004035825A (ja) * 2002-07-05 2004-02-05 Kanegafuchi Chem Ind Co Ltd 半導電性ポリイミドフィルムおよびその製造方法
CN101175633A (zh) * 2005-04-19 2008-05-07 宇部兴产株式会社 聚酰亚胺薄膜层合体
WO2009142938A1 (en) * 2008-05-20 2009-11-26 E. I. Du Pont De Nemours And Company Thermally and dimensionally stable polyimide films and methods relating thereto
US20090288699A1 (en) * 2008-05-20 2009-11-26 E.I. Du Pont De Nemours And Company Laminate structures for high temperature photovoltaic applications, and methods relating thereto
WO2010101822A1 (en) * 2009-03-06 2010-09-10 E. I. Du Pont De Nemours And Company Multilayer film for electronic circuitry applications and methods relating thereto

Family Cites Families (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3179634A (en) * 1962-01-26 1965-04-20 Du Pont Aromatic polyimides and the process for preparing them
US3287311A (en) 1963-01-03 1966-11-22 Du Pont Polyimide containing tio2, articles, and process of making
DE3486131T2 (de) * 1983-08-01 1993-10-28 Hitachi Chemical Co Ltd Harzmaterial mit geringer thermischer Ausdehnung für Verdrahtungsisolationsfolie.
US4522958A (en) 1983-09-06 1985-06-11 Ppg Industries, Inc. High-solids coating composition for improved rheology control containing chemically modified inorganic microparticles
JPH0665708B2 (ja) 1985-11-29 1994-08-24 鐘淵化学工業株式会社 新規ポリイミドフィルム及びその製造法
JP2744786B2 (ja) * 1987-01-20 1998-04-28 鐘淵化学工業株式会社 熱的寸法安定性にすぐれたポリイミド及びそれに用いるポリアミド酸
JPS63312328A (ja) 1987-06-15 1988-12-20 Tokai Carbon Co Ltd SiCウイスカ−強化ポリイミド樹脂の製造方法
JPS6455120A (en) 1987-08-27 1989-03-02 Mori Sangyo Kk Cultivation of shiitake mushroom and apparatus therefor
US5166308A (en) 1990-04-30 1992-11-24 E. I. Du Pont De Nemours And Company Copolyimide film with improved properties
US5148265A (en) 1990-09-24 1992-09-15 Ist Associates, Inc. Semiconductor chip assemblies with fan-in leads
US5148266A (en) 1990-09-24 1992-09-15 Ist Associates, Inc. Semiconductor chip assemblies having interposer and flexible lead
JPH05193065A (ja) * 1992-01-17 1993-08-03 Shin Etsu Chem Co Ltd カバーレイフィルム
JP3151219B2 (ja) 1992-07-24 2001-04-03 テツセラ,インコーポレイテッド 取り外し自在のリード支持体を備えた半導体接続構成体およびその製造方法
JPH0680874A (ja) * 1992-08-31 1994-03-22 Nippon G Ii Plast Kk 熱可塑性ポリエステルエラストマー樹脂組成物
US5436204A (en) 1993-04-12 1995-07-25 Midwest Research Institute Recrystallization method to selenization of thin-film Cu(In,Ga)Se2 for semiconductor device applications
US5441897A (en) 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells
US5837767A (en) 1994-10-31 1998-11-17 Ntn Corporation Stripping fingers
US5648407A (en) 1995-05-16 1997-07-15 Minnesota Mining And Manufacturing Company Curable resin sols and fiber-reinforced composites derived therefrom
US6120839A (en) 1995-07-20 2000-09-19 E Ink Corporation Electro-osmotic displays and materials for making the same
US6118426A (en) 1995-07-20 2000-09-12 E Ink Corporation Transducers and indicators having printed displays
US6120588A (en) 1996-07-19 2000-09-19 E Ink Corporation Electronically addressable microencapsulated ink and display thereof
US6124851A (en) 1995-07-20 2000-09-26 E Ink Corporation Electronic book with multiple page displays
US6017584A (en) 1995-07-20 2000-01-25 E Ink Corporation Multi-color electrophoretic displays and materials for making the same
US5821608A (en) 1995-09-08 1998-10-13 Tessera, Inc. Laterally situated stress/strain relieving lead for a semiconductor chip package
US5930026A (en) 1996-10-25 1999-07-27 Massachusetts Institute Of Technology Nonemissive displays and piezoelectric power supplies therefor
US5961804A (en) 1997-03-18 1999-10-05 Massachusetts Institute Of Technology Microencapsulated electrophoretic display
US6067185A (en) 1997-08-28 2000-05-23 E Ink Corporation Process for creating an encapsulated electrophoretic display
CN1085707C (zh) 1997-10-23 2002-05-29 上海市合成树脂研究所 钛酸钾晶须增强聚酰亚胺复合材料的制备方法
US6207739B1 (en) * 1997-11-20 2001-03-27 Kanegafuchi Kagaku Kogyo Kabushiki Polyamide acid composition containing metal, polyimide film, flexible printed wiring board and method for producing them
JP3978754B2 (ja) * 1997-12-29 2007-09-19 チッソ株式会社 ポリアミド酸組成物、液晶配向膜、及び液晶表示素子
AU3767899A (en) 1998-04-27 1999-11-16 E-Ink Corporation Shutter mode microencapsulated electrophoretic display
JP3518992B2 (ja) * 1998-06-05 2004-04-12 ソニーケミカル株式会社 フレキシブルプリント配線板
JP2000202970A (ja) * 1999-01-13 2000-07-25 Pi Gijutsu Kenkyusho:Kk ポリイミド被覆フィルム
JP3937278B2 (ja) * 1999-09-17 2007-06-27 東レ・デュポン株式会社 太陽電池基板用ポリイミドフィルムおよびそれを用いた太陽電池基板
JP4046921B2 (ja) 2000-02-24 2008-02-13 触媒化成工業株式会社 シリカ系微粒子、該微粒子分散液の製造方法、および被膜付基材
US6372538B1 (en) 2000-03-16 2002-04-16 University Of Delaware Fabrication of thin-film, flexible photovoltaic module
US6825068B2 (en) 2000-04-18 2004-11-30 E Ink Corporation Process for fabricating thin film transistors
JP4031624B2 (ja) 2000-06-23 2008-01-09 株式会社東芝 透明被膜付基材、透明被膜形成用塗布液、および表示装置
US6528145B1 (en) * 2000-06-29 2003-03-04 International Business Machines Corporation Polymer and ceramic composite electronic substrates
JP2002138152A (ja) * 2000-08-24 2002-05-14 Du Pont Toray Co Ltd ポリイミドフィルム、その製造方法およびこれを基材とした金属配線板
US6710456B1 (en) 2000-08-31 2004-03-23 Micron Technology, Inc. Composite interposer for BGA packages
JP2002173640A (ja) 2000-11-30 2002-06-21 Three M Innovative Properties Co ポリイミド含有コーティング組成物及びそれから形成されたフィルム
WO2002102882A1 (en) 2001-06-15 2002-12-27 Kaneka Corporation Semiconductive polyimide film and process for production thereof
CN100580014C (zh) * 2001-06-15 2010-01-13 株式会社钟化 半导电性聚酰亚胺膜及其制造方法
US7271333B2 (en) 2001-07-20 2007-09-18 Ascent Solar Technologies, Inc. Apparatus and method of production of thin film photovoltaic modules
JP2003082231A (ja) 2001-09-17 2003-03-19 Kanegafuchi Chem Ind Co Ltd ポリイミド樹脂組成物、ポリイミドフィルムおよびポリイミド管状物
US7018704B2 (en) * 2001-09-28 2006-03-28 Kaneka Corporation Polyimide film for flexible printed board and flexible printed board using the same
WO2003037620A1 (en) * 2001-11-01 2003-05-08 Arakawa Chemical Industries, Ltd. Polyimide-metal layered products and polyamideimide-metal layered product
JP2003192891A (ja) * 2001-12-20 2003-07-09 Thinflex Corp 耐熱性ポリイミド重合物及びその銅被覆積層板
DE60322663D1 (de) * 2002-01-15 2008-09-18 Pi R & D Co Ltd Lösungsmittellösliche block-copolyimidzusammensetzung und herstellungsverfahren dafür
JP2003306553A (ja) * 2002-04-15 2003-10-31 Kanegafuchi Chem Ind Co Ltd ポリイミド成形体
JP4119700B2 (ja) 2002-07-26 2008-07-16 株式会社カネカ 樹脂添加用無機粉体分散液の製造方法、並びに、ポリイミドフィルムおよびポリアミドイミドフィルム
EP1529314A1 (de) 2002-08-16 2005-05-11 DaimlerChrysler AG KAROSSERIETEIL EINES FAHRZEUGES MIT EINER DüNNSCHICHTSOLARZELLE UND SEIN ERSTELLUNGSVERFAHREN
US6949296B2 (en) * 2002-12-31 2005-09-27 E. I. Du Pont De Nemours And Company Polyimide substrates having enhanced flatness, isotropy and thermal dimensional stability, and methods and compositions relating thereto
US20050056312A1 (en) * 2003-03-14 2005-03-17 Young David L. Bifacial structure for tandem solar cells
US20050072461A1 (en) 2003-05-27 2005-04-07 Frank Kuchinski Pinhole porosity free insulating films on flexible metallic substrates for thin film applications
US7022402B2 (en) * 2003-07-14 2006-04-04 E. I. Du Pont De Nemours And Company Dielectric substrates comprising a polymide core layer and a high temperature fluoropolymer bonding layer, and methods relating thereto
JP3986474B2 (ja) * 2003-08-12 2007-10-03 株式会社カネカ Tab用ポリイミドフィルム、フィルムキャリアテープ及びtab用テープ
JP2005109163A (ja) * 2003-09-30 2005-04-21 Nec Electronics Corp 半導体素子
US20050163968A1 (en) * 2004-01-20 2005-07-28 Hanket Gregory M. Microfiller-reinforced polymer film
CN1320060C (zh) 2004-04-01 2007-06-06 中国科学院化学研究所 一种短纤维增强聚酰亚胺复合材料及制备方法和用途
JP2006028216A (ja) 2004-07-12 2006-02-02 Kaneka Corp ポリイミドフィルム及び該ポリイミドフィルムの製造方法
KR100591068B1 (ko) * 2004-09-03 2006-06-19 주식회사 코오롱 플렉시블 동박 폴리이미드 적층판 및 그 제조방법
JPWO2006033267A1 (ja) * 2004-09-24 2008-05-15 株式会社カネカ 新規なポリイミドフィルム並びにそれを用いて得られる接着フィルム、フレキシブル金属張積層板
US20060083939A1 (en) * 2004-10-20 2006-04-20 Dunbar Meredith L Light activatable polyimide compositions for receiving selective metalization, and methods and compositions related thereto
US20060127686A1 (en) 2004-12-15 2006-06-15 Meloni Paul A Thermally conductive polyimide film composites having high thermal conductivity useful in an electronic device
US7579134B2 (en) * 2005-03-15 2009-08-25 E. I. Dupont De Nemours And Company Polyimide composite coverlays and methods and compositions relating thereto
WO2007002110A2 (en) 2005-06-20 2007-01-04 Solyndra, Inc. Bifacial elonagated solar cell devices
WO2007011742A2 (en) 2005-07-14 2007-01-25 Konarka Technologies, Inc. Cigs photovoltaic cells
JP2007169494A (ja) * 2005-12-22 2007-07-05 Du Pont Toray Co Ltd 芳香族ポリイミドフィルム、カバーレイフイルムおよびフレキシブル積層板
WO2007101136A2 (en) * 2006-02-23 2007-09-07 Van Duren Jeroen K J High-throughput formation of semiconductor layer by use of chalcogen and inter-metallic material
DE102006016307B4 (de) 2006-04-06 2011-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 Thermisch stabile Matrixmikropartikel und Mikrokapseln für die Kunststoffadditivierung und Verfahren zu ihrer Herstellung und ihre Verwendung
US9161440B2 (en) 2006-06-26 2015-10-13 Sabic Global Technologies B.V. Articles comprising a polyimide solvent cast film having a low coefficient of thermal expansion and method of manufacture thereof
JP2008034527A (ja) * 2006-07-27 2008-02-14 Du Pont Toray Co Ltd カバーレイ
JP2008041960A (ja) * 2006-08-07 2008-02-21 Nissan Chem Ind Ltd 電子回路部品の製造方法
US20100048861A1 (en) * 2006-12-15 2010-02-25 Hak Gee Jung Polyimide resin and liquid crystal alignment layer and polyimide film using the same
JP2008156557A (ja) * 2006-12-26 2008-07-10 Du Pont Toray Co Ltd 高接着性共重合ポリイミドフィルム
US7695882B2 (en) * 2007-02-01 2010-04-13 Lexmark International, Inc. Toner formulation for controlling mass flow
JP4680979B2 (ja) * 2007-12-25 2011-05-11 住友電気工業株式会社 ポリイミドチューブ、その製造方法、及び定着ベルト
TWI398350B (zh) * 2008-02-05 2013-06-11 Du Pont 高黏著性聚醯亞胺銅箔積層板及其製造方法
EP2287239B1 (en) * 2008-05-20 2014-06-04 Ube Industries, Ltd. Polyimide metal laminate and solar cell
WO2009148562A1 (en) * 2008-06-04 2009-12-10 Solexant Corp. Thin film solar cells with monolithic integration and backside contact
CN102712753B (zh) 2009-11-20 2015-08-26 E·I·内穆尔杜邦公司 热稳定的且尺寸稳定的聚酰亚胺薄膜及与其相关的方法
US20120100663A1 (en) * 2010-10-26 2012-04-26 International Business Machines Corporation Fabrication of CuZnSn(S,Se) Thin Film Solar Cell with Valve Controlled S and Se

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004035825A (ja) * 2002-07-05 2004-02-05 Kanegafuchi Chem Ind Co Ltd 半導電性ポリイミドフィルムおよびその製造方法
CN101175633A (zh) * 2005-04-19 2008-05-07 宇部兴产株式会社 聚酰亚胺薄膜层合体
WO2009142938A1 (en) * 2008-05-20 2009-11-26 E. I. Du Pont De Nemours And Company Thermally and dimensionally stable polyimide films and methods relating thereto
US20090288699A1 (en) * 2008-05-20 2009-11-26 E.I. Du Pont De Nemours And Company Laminate structures for high temperature photovoltaic applications, and methods relating thereto
WO2010101822A1 (en) * 2009-03-06 2010-09-10 E. I. Du Pont De Nemours And Company Multilayer film for electronic circuitry applications and methods relating thereto

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108300363A (zh) * 2017-09-05 2018-07-20 广州美维电子有限公司 一种应用于pcb制作的保护胶膜及其制备方法和使用方法
CN108342082A (zh) * 2018-02-27 2018-07-31 深圳市华星光电半导体显示技术有限公司 一种具有表面保护层的柔性材料的制备方法
US11059204B2 (en) 2018-02-27 2021-07-13 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Method for manufacturing flexible material having surface protecting layer
CN109486189A (zh) * 2018-11-09 2019-03-19 李梅 一种用于fpc行业的tpi薄膜及其制备方法
CN109880094B (zh) * 2019-03-12 2021-08-24 黄山金石木塑料科技有限公司 一种防静电/导电型聚酰亚胺树脂及其制备方法与应用

Also Published As

Publication number Publication date
EP2502280B1 (en) 2014-03-05
US8653512B2 (en) 2014-02-18
CN102668108A (zh) 2012-09-12
EP2501740A1 (en) 2012-09-26
EP2501740B1 (en) 2016-03-16
WO2011063204A1 (en) 2011-05-26
KR20120096001A (ko) 2012-08-29
CN102803345A (zh) 2012-11-28
WO2011063215A1 (en) 2011-05-26
EP2501742B1 (en) 2016-03-16
US20120292086A1 (en) 2012-11-22
WO2011063209A1 (en) 2011-05-26
EP2501742A1 (en) 2012-09-26
CN102791769A (zh) 2012-11-21
CN102714192A (zh) 2012-10-03
KR20120096003A (ko) 2012-08-29
JP2013512535A (ja) 2013-04-11
WO2011063247A2 (en) 2011-05-26
EP2501743A1 (en) 2012-09-26
WO2011063247A3 (en) 2011-09-29
KR20120096002A (ko) 2012-08-29
CN102712753B (zh) 2015-08-26
JP2013511603A (ja) 2013-04-04
WO2011063238A1 (en) 2011-05-26
JP2013511600A (ja) 2013-04-04
CN102712753A (zh) 2012-10-03
EP2502269A2 (en) 2012-09-26
US20120227790A1 (en) 2012-09-13
EP2502280A1 (en) 2012-09-26
WO2011063229A1 (en) 2011-05-26
US20120228616A1 (en) 2012-09-13
EP2501741A1 (en) 2012-09-26
JP2013511412A (ja) 2013-04-04
KR20120117783A (ko) 2012-10-24
US20120231257A1 (en) 2012-09-13
US20120231263A1 (en) 2012-09-13
KR20120101459A (ko) 2012-09-13
EP2501743B1 (en) 2016-03-16
US20120231264A1 (en) 2012-09-13
KR20120096000A (ko) 2012-08-29
JP2013511601A (ja) 2013-04-04
JP2013511599A (ja) 2013-04-04

Similar Documents

Publication Publication Date Title
CN102712753B (zh) 热稳定的且尺寸稳定的聚酰亚胺薄膜及与其相关的方法
CN103183961B (zh) 含互穿型网络聚合物的聚酰胺酸树脂的溶液及聚酰亚胺金属积层板
WO2009142938A1 (en) Thermally and dimensionally stable polyimide films and methods relating thereto
TWI418577B (zh) A method for producing a polyimide film, and a polyamic acid solution composition
CN115141370A (zh) 聚酰亚胺、金属包覆层叠板及电路基板
HK1174935A (en) Coverlay compositions and methods relating thereto
HK1174936A (en) Thermally and dimensionally stable polyimide films and methods relating thereto
WO2007083527A1 (ja) ポリイミドフィルムおよびその製造方法
HK1176369A (en) Wire wrap compositions and methods relating thereto
CN111566151B (zh) 黑色聚酰亚胺薄膜及其制备方法
CN118255987A (zh) 聚酰胺酸、聚酰亚胺、树脂膜、金属包覆层叠板及电路基板
HK1175024A (en) Interposer films useful in semiconductor packaging applications, and methods relating thereto
JP2007130767A (ja) 銅張積層板の製造方法
HK1177216A (en) Thin film transistor compositions, and methods relating thereto

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1174935

Country of ref document: HK

AD01 Patent right deemed abandoned

Effective date of abandoning: 20121003

C20 Patent right or utility model deemed to be abandoned or is abandoned