CN102709202A - 一种集成电路封装及其组装方法 - Google Patents

一种集成电路封装及其组装方法 Download PDF

Info

Publication number
CN102709202A
CN102709202A CN2012100828554A CN201210082855A CN102709202A CN 102709202 A CN102709202 A CN 102709202A CN 2012100828554 A CN2012100828554 A CN 2012100828554A CN 201210082855 A CN201210082855 A CN 201210082855A CN 102709202 A CN102709202 A CN 102709202A
Authority
CN
China
Prior art keywords
substrate
wafer
carrier
encapsulation
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2012100828554A
Other languages
English (en)
Other versions
CN102709202B (zh
Inventor
爱德华·洛沃
雷泽尔·R·卡恩
埃德蒙·洛沃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies General IP Singapore Pte Ltd
Original Assignee
Zyray Wireless Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zyray Wireless Inc filed Critical Zyray Wireless Inc
Publication of CN102709202A publication Critical patent/CN102709202A/zh
Application granted granted Critical
Publication of CN102709202B publication Critical patent/CN102709202B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561Batch processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568Temporary substrate used as encapsulation process aid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13075Plural core members
    • H01L2224/1308Plural core members being stacked
    • H01L2224/13082Two-layer arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/1319Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354Coating
    • H01L2224/13599Material
    • H01L2224/136Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81001Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/81005Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81191Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81193Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • H01L2224/81815Reflow soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01075Rhenium [Re]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01087Francium [Fr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/1026Compound semiconductors
    • H01L2924/1032III-V
    • H01L2924/10329Gallium arsenide [GaAs]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

本发明涉及一种集成电路(IC)封装及其组装方法。形成包括多个基板的基板面板。分割所述基板面板,以分离成所述多个基板。将所分离的基板的至少子集连接在载体的表面。将一个或多个晶片连接装在所述载体上的每一个所述基板。在所述载体上使用模塑料对所述晶片和所述基板进行封装。从所封装的晶片和基板中拆卸所述载体,以形成模塑组装,所述模塑组装包括用于封装所述晶片和基板的所述模塑料。将多个互连连接在所述模塑组装的表面上的每一个所述基板。分割所述模塑组装,以形成多个IC封装。每一个IC封装包括至少一个所述晶片和基板。

Description

一种集成电路封装及其组装方法
技术领域
本发明涉及集成电路封装的组装。
背景技术
通常使用可以连接到(attach)电路板的封装将集成电路(IC)芯片或晶片与其他电路耦合(interface)。一种这样类型的IC晶片封装(IC die package)是球栅阵列(BGA)封装。BGA封装比许多其他如今可获得的封装解决方案提供更小的引脚印(footprint)。一种类型的BGA封装含有一个或多个连接在封装基板的第一表面的IC晶片,并且含有位于封装基板的第二表面的焊球垫阵列。焊球连接在焊球垫上。焊球回流以使封装连接在电路板上。
一种先进类型的BGA封装是晶圆级BGA封装。晶圆级BGA封装在业界有几个名字,包括晶圆片级芯片规模封装(WLCSP)等等。在晶圆级BGA封装中,当IC晶片还没有从其制造晶圆分割出来(singulate)时,焊球直接连接装在IC晶片上。这样,晶圆级BGA封装不包括封装基板。因此,相对包括传统BGA封装的其他IC封装类型,晶圆级BGA封装可以制造得很小,具有高引脚数(highpin out)。
对于用于晶圆级BGA封装的IC晶片,通常直接在晶片上形成布线。布线在晶片的表面形成,以按布线将晶片衬垫的信号发送至焊球连接在晶片上的位置。扇入(fan-in)布线和扇出(fan-out)布线是可在晶片上形成的两种不同类型的布线方式。扇入布线是一类仅在每个半导体晶片的区域之内形成的布线。扇出布线是一类在半导体晶片的区域之外延伸的布线。例如,对于每个晶片,可以在晶片半导体材料周围使用一种材料,所使用的材料是固体。然后,扇出布线可以应用于晶片,通过所使用的材料,在晶片的区域之外延伸。这样,扇出布线提供优势,包括使能在较大的区域上传递信号,从而为信号迹线提供更多空间。然而,目前的扇出布线技术需要昂贵的资本投资。虽然这样的资本投资可以在长期内提供资本效益,但不能在短期内提供成本效益。此外,由于目前该行业的趋势,将越来越多的装置移到晶圆级封装上,目前的扇出布线技术受到其能力的限制。这样,尽管扇出晶圆级制造的成本在下降,扇出晶圆级制造也难以赶上日益增加的压力来降低价格并保持利润率。
发明内容
本发明提供了制造集成电路封装的方法、系统和设备,结合至少一幅附图进行了详细描述,并在权利要求中得到了更完整的阐述。
根据本发明的一个方面,提供一种方法,所述方法包括:
形成包括多个基板的基板面板(substrate panel),每一个所述基板包括布线;
分割(singulating)所述基板面板,以分离所述多个基板;
将所分离的基板的至少子集连接在载体的表面;
将一个或多个晶片贴装在所述载体上的每一个所述基板;
在所述载体上使用模塑料(molding compound)对所述晶片和所述基板进行封装;
从所封装的晶片和基板中拆卸所述载体,以形成模塑组装,所述模塑组装包括用于封装所述晶片和基板的所述模塑料;
将多个互连(interconnect)连接在所述模塑组装的表面上的每一个所述基板;及
分割所述模塑组装,以形成多个集成电路封装,每一个集成电路封装包括至少一个所述晶片和基板。
优选地,所述方法进一步包括:
使用柱塞(stud)对在所述基板面板中的所述基板进行电镀,以形成用于将所述晶片贴装在所述基板的导电触点。
优选地,所述形成包括多个基板、且每个基板包括布线的基板面板包括:
形成所述基板面板来包含阵列中的所述基板,除了围绕所述阵列的所述基板面板的周边边缘区域之外,所述阵列填满所述基板面板。
优选地,所述将所分离的基板的至少子集连接在载体的表面包括:
对所分离的基板进行定位,使其在所述载体的所述表面上间隔地分开。
优选地,所述在所述载体上使用模塑料对所述晶片和所述基板进行封装包括:
填充位于带有所述模塑料的所分离的基板之间的空间。
优选地,所述分割所述模塑组装,以形成多个集成电路封装包括:
分割所述模塑组装,使得每一个集成电路封装包括围绕所包含的基板的外部边缘的模塑料的周边环(peripheral ring)。
优选地,所述互连是凸点互连。
优选地,所述方法进一步包括:
测试在所述基板面板中的所述基板,以确定一套工作基板;
其中,所述将所分离的基板的至少一个子集连接在载体的表面包括:
将所述一套工作基板的所分离的基板连接到所述载体的所述表面。
根据本发明的一个方面,提供一种方法,所述方法包括:
接收多个分离的基板;
将所述基板连接在载体的表面;
将一个或多个晶片贴装在所述载体上的每一个所述基板;
在所述载体上使用模塑料对所述晶片和所述基板进行封装;
从所封装的晶片和基板中拆卸所述载体,以形成模塑组装,所述模塑组装包括用于封装所述晶片和基板的所述模塑料;
将多个互连连接在所述模塑组装的表面上的每一个所述基板;及
分割所述模塑组装,以形成多个集成电路封装,每一个集成电路封装包括至少一个所述晶片和基板。
优选地,所述将所述基板连接在载体的表面包括:
对所述基板进行定位,使其在所述载体的所述表面上间隔地分开。
优选地,所述在所述载体上使用模塑料对所述晶片和所述基板进行封装包括:
填充位于带有所述模塑料的所述基板之间的空间。
优选地,所述分割所述模塑组装,以形成多个集成电路封装包括:
分割所述模塑组装,使得每一个集成电路封装包括围绕所包含的基板的外部边缘的模塑料的周边环。
优选地,所述互连是凸点互连。
优选地,所述方法进一步包括:
测试在所述基板面板中的所述基板,以确定一套工作基板;
其中,所述将所述基板的至少子集连接在载体的表面包括:
将所述一套工作基板的所述基板连接到所述载体的所述表面。
根据本发明的一个方面,提供一种集成电路封装,所述集成电路封装包括:
基板,其含有相对的第一和第二表面;
晶片,其连接在所述基板的所述第一表面;及
模塑料,用于封装所述基板的第一表面上的所述晶片,且形成围绕所述基板的外部边缘的周边环。
优选地,所述集成电路封装包括:
多个互连凸点,其连接在所述基板的所述第二表面。
优选地,所述集成电路封装包括:
多个柱塞,将所述晶片的接线端连接到所述基板的第一表面上的导电形体(feature)上。
优选地,所述集成电路封装包括:
多个焊接凸点,用于将晶片的接线端耦合至所述基板的所述第一表面上的导电形体(conductive feature)上。
附图说明
附图作为说明书的一部分,用于说明本发明,并结合具体实施方式进一步解释本发明的原理,以使本领域技术人员能够实施本发明。
图1是根据本发明实施例的形成集成电路封装基板的流程图;
图2是包含多个基板条的基板面板的示例的俯视图;
图3是根据本发明实施例的形成集成电路封装基板的过程的示意图;
图4和图5是根据本发明实施例的被充分地填满基板的基板面板的示意图;
图6是根据本发明实施例的第一和第二分割基板的侧面图;
图7是根据本发明实施例的测试基板面板的基板的过程的示意图;
图8是根据本发明实施例的分割晶圆以形成集成电路晶片的过程的示意图;
图9是晶圆的示例的俯视图;
图10是图9中的晶圆的剖视图,示出了第一和第二集成电路区域;
图11是根据本发明实施例的集成电路区域分割成分离的晶片的剖视图;
图12是根据本发明实施例的形成集成电路封装的流程图;
图13和图14是根据本发明实施例的载体基板的示例的示意图;
图15是根据本发明实施例的连接上基板的载体的表面的示意图;
图16是根据本发明实施例、图15中的基板连接上晶片的示意图;
图17和图18是根据本发明实施例的将晶片连接在载体上的基板的剖视图;
图19是根据本发明实施例的贴装有基板和晶片的载体的剖视图,其中,使用应用于载体的封装材料来封装基板和晶片;
图20是根据本发明实施例的图19中的载体已从封装材料、基板和晶片中分离出来的剖视图;
图21是根据本发明实施例的含有应用于封装基板的凸点互连的模塑组装的剖视图;
图22是根据本发明实施例的从图21的模塑组装中分割出来的集成电路封装的侧面剖视图;
图23是根据本发明实施例的包含环绕封装基板的边缘的封装材料的集成电路封装的侧面剖视图。
下面将结合附图对本发明进行详细描述。在附图中,相同标号一般表示相同或功能相似的部件。另外,附图标记最左边的数字表明该附图标记首次出现时的那幅附图的编号。
具体实施方式
引言
本说明书公开了一个或多个包含本发明特点的实施例。公开的实施例仅仅用于举例说明。本发明的保护范围并不限于所公开的实施例。本发明由所附权利要求来限定。
说明书中针对“一个实施例”、“实施例”、“示例实施例”等的引用,指的是描述的该实施例可包括特定的特征、结构或特性,但是不是每个实施例必须包含这些特定特征、结构或特性。此外,这样的表述并非必定指的是同一个实施例。进一步,在结合实施例描述特定的特征、结构或特性时,不管有没有明确的描述,已经表明将这样的特征、结构或特性结合到其它实施例中是在本领域技术人员的知识范围内的。
此外,应当理解,本发明所使用的空间描述(例如,“在…上面”、“在…下面”、“向上”、“左边”、“右边”、“向下”、“顶部”、“底部”、“垂直”、“水平”等)仅仅为了说明的目的。本发明描述的结构的实施例可以以任何方向或方式进行空间安排。
实施例
本发明的实施例使能有效地和经济地组装集成电路(IC)封装,例如球栅阵列(BGA)封装。在实施例中,形成IC封装包括将一个或多个晶片和基板封装在封装材料(例如,模塑料)中。在IC封装中,将一个或多个晶片贴装在封装基板,以及将凸点互连或其他类型的互连连接在封装基板以使封装连接装在电路板上。
可以使用现有的基板生产设施来组装IC封装实施例,而不需要扇出布线,根据扇出布线,通过使用晶片周围的额外区域来扩大晶片的区域,并通过额外的材料来将扇出布线路由出去。然而,用于扩大晶片的区域和使用扇出布线的制造工艺是是昂贵的和费时的。本发明的实施例由于不需要扇出布线的昂贵设备,显著地减轻了资本投资的约束。在本发明的实施例中,提高基板利用率,以显著地提高吞吐量,提高原料利用率,并降低成本。在这样的实施例中,增加了每个基板面板产生的封装的数量。此外,不需要标记基板面板/条中的非工作基板。
在本发明的一个实施例中,形成的基板可能尺寸过小,这可通过模塑料来弥补。例如,可能需要7mm*7mm的封装尺寸。可以形成6.6mm*6.6mm的基板,而围绕基板外部边缘的模塑料可以有0.2mm的厚度,以使得封装有以7mm*7mm的尺寸。这种方式可以更进一步地提高基板面板的利用率。
在本发明的实施例中,可以使用现有的或已制定的重建过程。例如,可以利用取放技术来将已知的好基板和晶片放置在载体上,并使用已建立的技术来对基板和晶片进行封装,来重建面板。
在本发明的实施例中,可以利用现有的扇出晶圆级封装的组装技术,但可以使用多层基板来代替重新分配层,使能避免重新分配层形成过程的步骤(以及相关昂贵的设备),转换成更具成本效益的解决方案。
这样的实施例具有成本效益和可生产性,并使能制造出含有大量引脚的小尺寸封装。本发明所描述的实施例仅用于说明的目的,并不限制本发明。虽然在下面的描述中主要以球栅阵列封装为例来进行说明,本发明的实施例可以适合于各种不同类型的集成电路封装类型,且这样的封装可以包括一个以上的集成电路晶片。在本发明的示教下,进一步的结构性和操作性实施例,包括修改/更改的实施例,对于本领域技术人员来说是显而易见的。
(1)示例基板制造实施例
根据本发明的实施例,可以在基板面板中形成IC封装使用的基板。例如,图1示出了根据本发明实施例的形成封装基板的流程100。为了说明的目的,下面结合图2-6来对流程100进行描述。根据本发明提供的讨论,进一步的结构性和操作性实施例,对于本领域技术人员来说是显而易见的。
流程100开始于步骤102。在步骤102中,形成包括多个基板的基板面板,每个基板包括布线。在本发明的实施例中,形成的基板面板可包括与封装基板相对应的多个区域。形成的基板面板包括一个或多个布线层和一个或多个绝缘层,并形成穿通绝缘层的导电孔。在基板面板的第一表面上的导电垫(用于传输晶片的信号)经过布线层和孔,穿通基板面板,连接至基板面板的第二表面上的焊球垫。本领域的技术人员知悉,可以根据标准的或专有的基板面板制造技术来制造基板面板。
例如,图2示出了示例基板面板200的表面图,基板面板200包括多个基板条部分202a-2021。每个基板条部分202a-2021包括多个基板204。虽然图2所示的基板面板200包括12个基板条部分202a-2021(2乘6阵列),在其他实施例中,基板面板200可以包括其他数量的基板条部分202。此外,虽然图2所示的每个基板条部分202a-2021包括24个基板204(2乘12阵列),每个基板条部分202可以包括其他数量的基板204。
根据一种类型的IC封装的组装技术,可以分离(例如,锯切割等)基板面板200以形成分离的基板条,每个基板条包括多个基板204。可以测试每个基板条中的基板204,并标记任何非工作基板204(测试失败的基板)。对于特定的基板条,可以将晶片连接装在工作基板204(在基板条中没有标记为失败的基板),可以将晶片封装在基板条上,可以将凸点互连连接在基板条,以及可以将基板条分割成分离的集成电路封装。
然而,这样的IC的组装技术也有缺点。例如,如图2所示,在基板条部分202a-2021之间和周围的基板面板200的额外的部分是未利用的。在分离基板面板200之后,丢弃基板面板200的未利用的部分,导致浪费材料和成本。此外,在测试期间,如果确定某一基板条包括特定数量的非工作基板204(例如,大于基板条中的基板总数的10%,大于基板条中的基板总数的20%等),可以丢弃整个基板条,将其当作对进一步的处理来说是无效的。这样,在丢弃的基板条中的任何工作基板也被丢弃,导致进一步浪费材料和成本。
本发明的实施例使能减少基板面板的浪费。例如,在一个实施例中,流程100的步骤102可以包括图3所示的步骤302。在步骤302中,形成基板面板,使其被充分地填满多个基板。在这样的实施例中,大幅减少或完全消除基板面板的未利用的部分。在这种方式中,几乎没有基板材料被丢弃,节省了材料和成本和提高了基板面板的利用率。
例如,图4和图5分别示出了根据本发明的实施例的充分被基板204填满的基板面板400和500。在图4中,基板面板400包括基板204的阵列402,和围绕阵列402的基板面板的周边边缘部分404。阵列402中的基板204彼此相邻,使得基板面板400没有未使用部分出现在基板204之间。当从基板面板400中将基板204分割出来时,边缘部分404是基板面板400唯一被丢弃的重要部分。图4所示的基板面板400为矩形的,但是,在其他实施例中,可以有其他形状。此外,图4所示的阵列402为18乘26阵列的基板204(208个基板204),但是,在其他实施例中,可以有其他尺寸和/或其他数量的基板204。
在图5中,基板面板500包括基板204阵列。在基板面板500中没有基板面板边缘部分。基板面板500中的基板204彼此相邻,使得基板204之间或周围没有基板面板500的未使用部分。当从基板面板500中将基板204分割出来时,没有基板面板500的重要部分被丢弃。图5所示的基板面板500为矩形的,但是,在其他实施例中,可以有其他形状。此外,图5所示的基板面板500为18乘26阵列的基板204(208个基板204),但是,在其他实施例中,可以有其他尺寸和/或其他数量的基板204。
形成基板面板,例如基板面板200、400和500,使得基板204的每一个都包括一个或多个导电层,该导电层被一个或多个绝缘层隔开。导电层可以包括迹线/布线、接合指(bond fingers)、接触垫,和/或其他导电特性。例如,可以形成含有一个导电层、两个导电层或四个导电层的BGA基板。导电层可以由导电材料如金属或金属组合物/合金,包括铜、铝、锡、镍、金、银等所做成的。在实施例中,基板面板可以是刚性的或可以是柔韧的(例如,“柔性”基板或柔性电路)。绝缘材料可以由陶瓷、玻璃、塑料、胶带和/或其他合适的材料所做成。例如,基板面板的绝缘层可以由有机材料如BT(双马来酰亚胺三嗪)层压材料/树脂、柔性胶带材料如聚酰亚胺、阻燃剂玻璃纤维复合基板材料(例如,FR-4)等所做成的。导电和非导电层可以堆叠和层压在一起,或互相耦合在一起,以本领域的技术人员所知悉的方式,形成基板面板中的基板204。
在步骤104中,分割基板面板以分离成多个基板。在实施例中,本领域的技术人员知悉,可以以任何方式分割基板面板,例如基板面板200、400和500,以形成分离的基板204。例如,可以使用锯子(例如,锯切割)、激光,或根据任何其他分割技术,来分割基板面板。图6示出了根据本发明实施例的从基板面板分割出来的第一基板204a和第二基板204b的侧面图。
在实施例中,图1的流程100可以包括进一步的图7所示的步骤702。在步骤702中,可以在基板面板中测试基板,以确定一套工作基板。在实施例中,可以在基板面板,例如基板面板200、400和500中的一个中测试基板204,以确定工作基板(通过测试的基板204)和非工作基板(测试失败的基板204)。本领域的技术人员知悉,可以在基板204上执行任何类型和数量的测试。例如,可以执行功能测试(例如,通过探针接触基板204的导电形体,来提供测试信号和衡量测试结果),还可以执行环境测试等。
在实施例中,对基板面板中的在步骤702中被确定为非工作基板204进行标记。例如,可以使用油墨、激光打标,或其他类型的标记,来对非工作基板进行标记,以标示它们是非工作的。在这种方式中,识别出任何非工作基板,使得不对它们进行进一步的处理/使用。应当注意的是,从基板面板中将基板204分割出来(在图1的步骤104),而不是在基板条内(例如,如结合图2的基板面板200所进行的描述)就对基板204进行处理形成IC封装,可以将个别的非工作基板从进一步的处理/使用中移除,而不是潜在地将整个含有一些工作基板的基板条丢弃。在这种方式中,不浪费工作基板。
(2)晶圆处理实施例
正如上面所述,IC封装可以包括一个或多个IC晶片。本领域的技术人员知悉,可以在晶圆中制造IC晶片,并以任何方式将其从晶圆中分离出来。
例如,可以根据图8所示的步骤802产生这样的晶片。在步骤802中,将晶圆分割成多个集成电路晶片,每一个集成电路晶片包括集成电路区域。例如,图9示出了示例晶圆900的俯视图。晶圆900可以是硅、砷化镓或其他晶圆类型。如图9所示,晶圆900含有由多个集成电路区域902(图9中所示的小矩形)定义的表面。将每一个集成电路区域902封装在IC封装中,例如球栅阵列封装。晶圆900中可以包括许多集成电路区域902,包括10s、100s、1000s,甚至更大的数量。
图10示出了晶圆900的剖视图,示出第一集成电路区域902a和第二集成电路区域902b。如图10所示,集成电路区域902a和902b的每一个都包括多个接线端1002(例如,接线端1002a-1002c),接线端1002是集成电路区域902的电信号(例如,输入-输出信号、电源信号、接地信号、测试信号等)的接入点(例如,也被称为“晶片垫”、“I/O垫”等)。在晶圆900的表面上可以有任何数量的接线端1002适用于每一个集成电路区域902,包括10s、100s,甚至更大数量的接线端1002。
可以通过背面研磨使晶圆900随意地变薄。例如,如果需要和/或必须,可以在晶圆900上执行背面研磨处理,来减少晶圆900的厚度,以得到所需的量。然而,不一定需要在所有的实施中执行晶圆900的变薄处理。本领域的技术人员知悉,可以以任何方式使晶圆900变薄。晶圆900可以制造得尽可能薄,以帮助使得到的封装的厚度减至最低,该结果的封装包括集成电路区域902。此外,可以在晶圆900中测试每一个集成电路区域902。例如,测试探针接触晶圆900中的接线端1002,来提供测试输入信号和接收测试结果信号,以测试每一个集成电路区域902。
本领域的技术人员知悉,根据图8的步骤802,可以以任何适当的方式将晶圆900分割/切块,使得集成电路区域彼此物理地分开。例如,可以以常规或其他方式使用锯子、刳刨机、激光等来分割晶圆900。图11示出了已分别从彼此中分割出来形成晶片1102a和1102b的集成电路区域902a和902b的剖视图。根据晶圆900的集成电路区域902的数量,可以将晶圆900分割成10s、100s、1000s,甚至更大数量的晶片1102。
(3)IC封装的组装/制造实施例
在实施例中,组装/制造的IC封装包括基板(例如基板204)和IC晶片(例如晶片1102)。应当注意的是,可以在制造IC封装的设施的同一设施中形成和/或分割用于制造IC封装的基板和/或晶片。或者,也可以在与制造IC封装的设施独立/不同的设施中形成和/或分割用于制造IC封装的基板和/或晶片。如果在与制造IC封装的设施不同的设施中分割基板和晶片,仅需将所分割的通过测试的基板和/或晶片(即工作基板和/或工作晶片)运送到制造IC封装的设施。在这种方式中,IC封装的制造工艺并不需要耗费资源,避免使用非工作基板和/或晶片。例如,当在基板条中形成IC封装时,在条中的一些基板是非工作的,IC封装的制造工艺为了避免浪费工作晶片,避免将工作晶片连接在基板条中的非工作基板上。在本发明所描述的实施例中,在以下情况下是不需要这种避免的,当基板已经分割好时,在将晶片连接到所分割的基板之前,丢弃非工作的所分割的基板。
在实施例中,可以以各种不同的方式制造IC封装。例如,图12示出了根据本发明实施例的组装IC封装的流程1200。为了说明的目的,下面结合图13-23来对流程1200进行描述。在本发明提供的讨论下,其他的结构性和操作性实施例,对于本领域技术人员来说是显而易见的。此外,不一定需要按所示的顺序执行流程1200的步骤,而可以按其他顺序来执行。流程1200如下所述。
流程1200开始于步骤1202,在步骤1202中,将所分离的基板的至少子集连接在载体的表面。在一个实施例中,将从上面所述的基板面板中分割出来的封装基板如基板204连接在载体的表面。在一个实施例中,将从基板面板中分割出来的通过测试的基板的子集(例如,如结合图7进行描述的工作基板)连接在载体上。不将没有通过测试的基板(例如,非工作基板)连接在载体上。
可以使用任何合适类型的载体,包括由陶瓷、玻璃、塑料、半导体材料(例如,硅、砷化镓等)、金属或其他材料组成的载体,来接收所分离的基板。载体可以具有用于接收基板204的平坦的表面。这样的载体可以具有任何外形轮廓,包括圆形、矩形或其他形状。例如,图13和图14示出了根据本发明实施例的示例载体基板。图13示出了圆形的载体1302。在一个实施例中,载体1302可以是半导体晶圆(例如,硅或砷化镓),或可以由其他材料如塑料、陶瓷、玻璃、金属等组成。图14示出了方形的载体1402。例如,在一个实施例中,载体1402可以由材料如塑料、陶瓷、玻璃、金属等组成。
图15示出了根据本发明实施例的载体1302的示意图,载体1302具有连接多个基板204的平坦的表面1502。为了说明的目的,图15(和另外的附图)示出了载体1302,但在其他实施例中,可以使用图14的载体1402或其他载体。可以以任何方式,包括通过利用取放设备、自动对准工艺或其他技术,来将基板204放置和/或定位在载体1302的表面1502上。在将基板204放置在表面1502之前,可以使用黏合剂材料黏到表面1502和/或基板204的表面,以使基板204黏附于表面1502。可以使用任何合适的黏合剂材料,包括环氧树脂、胶膜等。
在图15的示例中,示出了21个连接在载体1302的表面1502的基板204。然而,在实施例中,可以将任意数量的基板204连接在载体的表面,包括10个、100个,或甚至数千个基板204。在一个实施例中,可以将基板204彼此相邻(彼此接触)地定位在载体1302的表面1502上。在另一个实施例中,可以将基板204间隔地分开定位在载体1302的表面1502上,如图15所示。根据具体的应用,基板204可以以任何距离间隔地分开,该局里被确定用于特殊的应用。
参考回图12,在步骤1204中,将一个或多个晶片贴装在载体上的每一个基板。在实施例中,可以将一个或多个晶片,例如图11的晶片1102a和/或晶片1102b,贴装在连接于载体的每一个基板204。例如,图16示出了根据本发明一个实施例的连接上基板204的且每一个基板204连接上IC晶片1102的载体1302的示意图。可以以任何方式,包括通过利用取放设备、自动对准工艺或其他技术,来将晶片1102放置和/或定位在基板204上。晶片1102的接线端可以与基板204上的导电焊盘垫对准,以将晶片1102的信号耦合至基板204的布线。例如,可以使用焊料或其他导电材料(例如,金属或金属组合物/合金)将接线端耦合至导电垫。在将晶片1102放置在基板204之前,使用黏合剂材料黏到基板204的表面和/或晶片1102的非活性表面。可以使用黏合剂材料以将晶片1102黏附于基板204。可以使用任何合适的黏合剂材料,包括常规的镜片连接材料、环氧树脂、胶膜等。
例如,图17示出了根据本发明实施例的部分载体1302的剖视图。如图17所示,将基板204a和204b连接在载体1302的表面1502。基板204a和204b的每一个含有相对的第一表面1702和第二表面1704,其中第二表面1704连接在载体1302的表面1502。将晶片1102a连接在基板204a的第一表面1702,并在这个过程中将晶片602b连接在基板204b的第一表面1702。在图17的示例中,使用多个柱塞1708作为在每一个晶片1102和基板204之间的互连。例如,如图17所示,在基板204b的第一表面1702上的导电特性(例如,导电垫、布线等)上形成(例如,电镀)多个柱塞1708。柱塞1708形成用于将晶片1102a和1102b连接装到基板204a和204b的导电触点(conductive contacts)。对晶片1102b的接线端1706进行定位,使其与柱塞1708接触,以及可以回流焊柱塞1708,以将晶片1102b的接线端1706连接至基板204b的第一表面1702上的导电形体(另外,或者是黏合剂材料)。如图17所示,晶片1102a的接线端1706与基板204a的第一表面1702上的柱塞1708接触和相连接,以将晶片1102a的接线端1706连接至基板204a的第一表面1702上的导电形体。柱塞1708可以是由任何合适的导电材料包括金属(例如,金(Au)、铜(Cu)等)、金属组合物/合金(例如,焊料等)、导电涂层材料的聚合形成等来做成的。
此外,应当注意的是,晶片1102的接线端1706包括晶片1102的信号垫,以及可以包括在晶片垫上形成的一个或多个金属层,被称为凸点下金属(UBM)层。UBM层通常是一个或多个金属层形成的(例如,金属沉积-电镀、溅射等),提供在晶片垫和额外的布线和/或封装互连机制如柱塞或焊球之间的强壮的接口。
图18示出了根据本发明另一个实施例的载体1302的部分的剖视图。如图18所示,将基板204a和204b连接在载体1302的表面1502。基板204a和204b的每一个含有相对的第一表面1702和第二表面1704,其中第二表面1704连接在载体1302的表面1502。将晶片1102a连接在基板204a的第一表面1702,并在这个过程中将晶片602b连接在基板204b的第一表面1702。在图18的示例中,使用多个凸点互连(焊接凸点)作为在每一个晶片1102和基板204之间的互连。例如,如图18所示,在晶片1102b的接线端1706上形成多个凸点互连1802。对晶片1102b的接线端1706/凸点互连1802进行定位,使其与基板204b的第一表面1702上的导电形体接触(另外,或者是黏合剂材料),以及可以回流焊凸点互连1802,以将接线端1706连接至基板204b的第一表面1702上的导电特性。如图18所示,通过回流焊凸点互连1802,将晶片1102a的接线端1706连接至基板204a的第一表面1702上的导电形体。
应当注意的是,图16-18所示的由基板204和晶片1102形成的连接在载体(例如,载体1302或1402)上的结构可称为“重建面板”。这是至少部分地因为贴装在载体上的基板204可以看作是基板面板例如基板面板200、400和500(图2、4和5)的重建形式。
此外,应当注意的是,按图12所示的顺序执行步骤1202和1204,或按相反的顺序,这样在步骤1202之前执行步骤1204。例如,在将基板204(和晶片1102)连接在载体1302的表面1502之前,将图16所示的晶片1102连接在基板204。在一个实施例中,可以将晶片1102连接在分割的基板204(即,已彼此分离的基板204)。或者,在另一个实施例中,当基板204仍然是以面板形式时(即,基板204仍然在基板面板中彼此相连接),可以将晶片1102连接在基板204。
参考回图12,在步骤1206中,在载体上使用模塑料对晶片和基板进行封装。例如,图19示出了根据本发明实施例的含有封装好的晶片和基板的载体1302的侧面剖视图。如图19所示,将多个基板204a-204e连接在载体1302的表面1502,并将多个晶片1102a-1102e连接在基板204a-204e。此外,在载体1302上,模塑料1902对基板204a-204e和晶片1102a-1102e进行封装。模塑料1902是可用于在载体1302上对基板204a-204e和晶片1102a-1102e进行封装的封装材料的例子。模塑料1902可以以任何方式应用于载体1302,包括根据真空成型工艺等。例如,在一个实施例中,模子定位在载体1302(连接有基板和晶片)的表面1502上,以及可以将模塑料1902插入到模子中(例如,以液态形式),并使其固化以在载体1302上对基板204a-204e和晶片1102a-1102e进行封装。合适的封装材料,包括模塑料,是本领域的技术人员知悉的,还包括树脂,环氧树脂等。
在步骤1208中,从所封装的晶片和基板中拆卸载体,以形成模塑组装,该模塑组装包括用于封装晶片和基板的模塑料。例如,图20示出了根据本发明实施例的已从所封装的晶片和基板中移除或拆卸出来的载体1302的侧面剖视图。在图20中,基板204a-204e、晶片1102a-1102e和模塑料1902形成从载体1302中拆卸出来的模塑组装2002。基板204a-204e的第二表面1704齐平于并暴露于模塑组装2002的表面(图20中的底部表面)。否则,在模塑组装2002中通过模塑料1902对晶片1102a-1102e和基板204a-204e进行封装。可以以任何方式从模塑组装2002中拆卸载体1302。例如,可以从载体1302中将模塑组装2002剥落下来,可以对模塑组装2002和/或载体1302进行加热或冷却,引起或使能载体1302从模塑组装2002中拆卸出来等。在一个实施例中,模塑料1902贴附于基板204a-204e比连接附于载体1302更为牢固(例如,比将基板204a-204e连接在载体1302的黏合剂材料更为牢固),以使能基板204a-204e和模塑料1902一起从载体1302中拆卸出来,而不是在拆卸后基板204a-204e仍留在载体1302上。
在步骤1210中,将多个互连连接在模塑组装的表面上的每一个基板。例如,在实施例中,将多个互连连接在模塑组装2002中的基板204的第二表面1704。可以使用互连来使能将模塑组装2002贴装在电路板(例如,印刷电路板等)而产生IC封装。这些互连的例子包括BGA封装的凸点互连(例如,焊球)、引脚(例如,陈列引脚封装(PGA)的)、贴(post),或其他类型的互连。模塑组装2002的基板204可以以任何方式,包括根据常规和专有的技术,来采用这些互连。
例如,图21示出了根据本发明实施例的连接有焊球2102的图20的模塑组装2002的侧面剖视图。如图21所示,将多个焊球2102连接在每一个基板204a和204b的第二表面1704。将每一个焊球2102连接在相对应的焊球垫。这样,每个IC晶片1102的接线端的信号通过在IC晶片1102和基板204之间的互连(例如,柱塞或凸点)、基板204的表面1702上的布线、导通基板204的通孔、随意存在于基板204的进一步的布线层的额外布线和基板204的表面1704到焊球垫的布线,与焊球2102电连接。
参考回图12,在步骤1212中,分割模塑组装,以形成多个集成电路封装,每一个集成电路封装包括至少一个晶片和基板。例如,图22示出了从图21的模塑组装2002中分割出来的第一IC封装2202a和第二IC封装2202b。可以从模塑组装中分割出许多IC封装2202,包括10s、100s、甚至数千个IC封装2202。如图22所示,IC封装2202a包括连接在基板204a的晶片1102a、在基板204a上封装晶片1102a的模塑料1902,以及连接在基板204a的第二表面1704的焊球2102。此外,IC封装2202b包括贴装在基板204b的晶片1102b、在基板204b上封装晶片1102b的模塑料1902,以及连接在基板204b的第二表面1704的焊球2102。
本领域的技术人员知悉,可以以任何适当的方式从模塑组装2002中分割IC封装2202,使得它们彼此物理地分开。例如,可以以常规或其他方式使用锯子、刳刨机、激光等来分割IC封装2202。可以通过切透模塑料1902以使IC封装2202a和2202b彼此分离和与其他IC封装2202(图21未示出)分离,从图21的模塑组装2002中分割出图22的IC封装2202a和2202b。在一个实施例中,可以在基板204a和204b的周边边缘邻近直接执行切割,使得模塑料1902不留在IC封装2202a和2202b中的基板204a和204b的周边边缘的周围(即,暴露周边基板边缘)。或者,如图22所示,可以在离基板204a和204b的周边边缘一定的距离执行切割,使得一些模塑料1902留在IC封装2202a和2202b中的基板204a和204b的周边边缘的周围(即,不暴露周边基板边缘)。
例如,图23示出了从模塑组装2002中分割出来的IC封装2202a的侧面剖视图。如图23所示,基板204a的外部边缘邻近的空间2302填满模塑料1902(例如,基板204a的四周边缘),形成围绕基板204a的模塑料1902的环。在这种方式中,仅仅是基板204a的第二表面1704是暴露的(即,没有被模塑料1902覆盖)。这使能通过模塑料1902保护基板204a的外部边缘免受环境的影响。
此外,模塑料1902的周边环使能随意地形成尺寸过小的基板204,使用模塑料1902来弥补所减少的尺寸。例如,需要7mm*7mm尺寸的IC封装2202a。这样,可以以6.6mm*6.6mm的尺寸形成基板204a,并对基板204a周围的空间2302中的模塑料1902进行切割(在分割过程中,或者之后)以使其具有0.2mm的厚度,来使得IC封装2202a有以7mm*7mm尺寸。在这种方式中,通过在基板面板中包括较小的基板,进一步提高基板面板的利用率,因此,在基板面板中可以包含大量的基板。此外,当基板204a不能完全扩展到IC封装2202a的边缘时,IC封装2202a包括更少的基板204a,而包括更多的模塑料1902,降低了IC封装2202a的总成本(因为相同体积的模塑料1902要比基板204a便宜)。
三、结论
尽管以上对本发明的各个实施例进行了描述,但应该理解的是,它们仅用于示例说明而非限制目的。对本领域技术人员而言显而易见的是,在不背离本发明的精神和范围的情况下可对其形式和细节作出各种改变。因此,本发明的宽度和范围并不应受限于上述任一示例性实施例,而仅应该依照以下所附的权利要求及其等效替换来限定。

Claims (10)

1.一种集成电路封装的组装方法,其特征在于,所述方法包括:
形成包括多个基板的基板面板,每一个所述基板包括布线;
分割所述基板面板,以分离成所述多个基板;
将所分离的基板的至少子集连接在载体的表面;
将一个或多个晶片贴装在所述载体上的每一个所述基板上;
在所述载体上使用模塑料对所述晶片和所述基板进行封装;
从所封装的晶片和基板中拆卸所述载体,以形成模塑组装,所述模塑组装包括用于封装所述晶片和基板的所述模塑料;
将多个互连连接在所述模塑组装的表面上的每一个所述基板;及
分割所述模塑组装,以形成多个集成电路封装,每一个集成电路封装包括至少一个所述晶片和基板。
2.根据权利要求1所述的集成电路封装的组装方法,其特征在于,所述方法进一步包括:
使用柱塞对在所述基板面板中的所述基板进行电镀,以形成用于将所述晶片贴装在所述基板的导电触点。
3.根据权利要求1所述的集成电路封装的组装方法,其特征在于,所述形成包括多个基板、、且每个基板包括布线的基板面板包括:
形成所述基板面板来包含阵列中的所述基板,除了围绕所述阵列的所述基板面板的周边边缘区域之外,所述阵列填满所述基板面板。
4.根据权利要求1所述的集成电路封装的组装方法,其特征在于,所述将所分离的基板的至少一个子集连接在载体的表面包括:
对所分离的基板进行定位,使其在所述载体的所述表面上间隔地分开。
5.根据权利要求4所述的集成电路封装的组装方法,其特征在于,所述在所述载体上使用模塑料对所述晶片和所述基板进行封装包括:
填充在所分离的基板与所述模塑料之间的空间。
6.根据权利要求5所述的集成电路封装的组装方法,其特征在于,所述分割所述模塑组装,以形成多个集成电路封装包括:
分割所述模塑组装,使得每一个集成电路封装包括围绕所包含的基板的外部边缘的模塑料的周边环。
7.一种集成电路封装的组装方法,其特征在于,所述方法包括:
接收多个分离的基板;
将所述基板连接在载体的表面;
将一个或多个晶片贴装在所述载体上的每一个所述基板;
在所述载体上使用模塑料对所述晶片和所述基板进行封装;
从所封装的晶片和基板中拆卸所述载体,以形成模塑组装,所述模塑组装包括用于封装所述晶片和基板的所述模塑料;
将多个互连连接在所述模塑组装的表面上的每一个所述基板;及
分割所述模塑组装,以形成多个集成电路封装,每一个集成电路封装包括至少一个所述晶片和基板。
8.根据权利要求7所述的集成电路封装的组装方法,其特征在于,所述将所述基板连接在载体的表面包括:
对所述基板进行定位,使其在所述载体的所述表面上间隔地分开。
9.根据权利要求8所述的集成电路封装的组装方法,其特征在于,所述在所述载体上使用模塑料对所述晶片和所述基板进行封装包括:
填充位于带有所述模塑料的所述基板之间的空间。
10.一种集成电路封装,其特征在于,所述集成电路封装包括:
基板,其含有相对的第一和第二表面;
晶片,其贴装在所述基板的所述第一表面;及
模塑料,用于封装所述基板的第一表面上的所述晶片,且形成围绕所述基板的外部边缘的周边环。
CN201210082855.4A 2011-03-25 2012-03-26 一种集成电路封装及其组装方法 Active CN102709202B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/071,799 US8367475B2 (en) 2011-03-25 2011-03-25 Chip scale package assembly in reconstitution panel process format
US13/071,799 2011-03-25

Publications (2)

Publication Number Publication Date
CN102709202A true CN102709202A (zh) 2012-10-03
CN102709202B CN102709202B (zh) 2015-07-01

Family

ID=46876665

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210082855.4A Active CN102709202B (zh) 2011-03-25 2012-03-26 一种集成电路封装及其组装方法

Country Status (5)

Country Link
US (1) US8367475B2 (zh)
KR (1) KR101402868B1 (zh)
CN (1) CN102709202B (zh)
HK (1) HK1169744A1 (zh)
TW (1) TWI541918B (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104718519A (zh) * 2013-08-23 2015-06-17 林龙辰 工艺模块及其制造方法和利用该工艺模块的基板加工方法
CN109545694A (zh) * 2018-11-13 2019-03-29 无锡中微高科电子有限公司 一种破损基板的模封方法
CN109964277A (zh) * 2016-10-20 2019-07-02 德州仪器公司 用于检测及移除有缺陷集成电路封装的方法及设备
CN109979832A (zh) * 2017-12-20 2019-07-05 力成科技股份有限公司 封装结构及其制造方法
WO2019161641A1 (zh) * 2018-02-24 2019-08-29 华为技术有限公司 一种芯片及封装方法
CN110444480A (zh) * 2019-07-24 2019-11-12 浙江荷清柔性电子技术有限公司 制作柔性芯片的方法、柔性芯片

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9496195B2 (en) * 2012-10-02 2016-11-15 STATS ChipPAC Pte. Ltd. Semiconductor device and method of depositing encapsulant along sides and surface edge of semiconductor die in embedded WLCSP
US9620413B2 (en) 2012-10-02 2017-04-11 STATS ChipPAC Pte. Ltd. Semiconductor device and method of using a standardized carrier in semiconductor packaging
US9704780B2 (en) 2012-12-11 2017-07-11 STATS ChipPAC, Pte. Ltd. Semiconductor device and method of forming low profile fan-out package with vertical interconnection units
US9240331B2 (en) 2012-12-20 2016-01-19 Stats Chippac, Ltd. Semiconductor device and method of making bumpless flipchip interconnect structures
US9245770B2 (en) 2012-12-20 2016-01-26 Stats Chippac, Ltd. Semiconductor device and method of simultaneous molding and thermalcompression bonding
US9287204B2 (en) 2012-12-20 2016-03-15 Stats Chippac, Ltd. Semiconductor device and method of bonding semiconductor die to substrate in reconstituted wafer form
US9704824B2 (en) 2013-01-03 2017-07-11 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming embedded wafer level chip scale packages
US9721862B2 (en) 2013-01-03 2017-08-01 STATS ChipPAC Pte. Ltd. Semiconductor device and method of using a standardized carrier to form embedded wafer level chip scale packages
TWI658543B (zh) * 2013-12-05 2019-05-01 新加坡商史達晶片有限公司 在半導體封裝中使用標準化載體的半導體裝置及方法
US9524942B2 (en) * 2013-12-18 2016-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. Chip-on-substrate packaging on carrier
US9704769B2 (en) 2014-02-27 2017-07-11 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming encapsulated wafer level chip scale package (EWLCSP)
US20150303170A1 (en) * 2014-04-17 2015-10-22 Amkor Technology, Inc. Singulated unit substrate for a semicondcutor device
KR101563909B1 (ko) 2014-08-19 2015-10-28 앰코 테크놀로지 코리아 주식회사 패키지 온 패키지 제조 방법
US9972593B2 (en) * 2014-11-07 2018-05-15 Mediatek Inc. Semiconductor package
US9443785B2 (en) * 2014-12-19 2016-09-13 Advanced Semiconductor Engineering, Inc. Semiconductor package
KR102335106B1 (ko) 2015-06-19 2021-12-03 삼성전자 주식회사 발광 소자 패키지 및 그 제조 방법
JP2017054888A (ja) * 2015-09-08 2017-03-16 株式会社ディスコ ウエーハの加工方法
CN105329850B (zh) * 2015-10-21 2017-03-08 美新半导体(无锡)有限公司 圆片级芯片尺寸封装的测试方法
KR101685849B1 (ko) * 2015-11-04 2016-12-13 앰코 테크놀로지 코리아 주식회사 반도체 패키지 모듈 제조 방법 및 이를 이용한 반도체 패키지 모듈
US10535611B2 (en) * 2015-11-20 2020-01-14 Apple Inc. Substrate-less integrated components
KR20170085833A (ko) * 2016-01-15 2017-07-25 삼성전기주식회사 전자 부품 패키지 및 그 제조방법
JP7084702B2 (ja) * 2016-09-02 2022-06-15 アイデックス バイオメトリクス エーエスエー 指紋センサに適したカバー部材を製造する方法
JP7189672B2 (ja) * 2018-04-18 2022-12-14 新光電気工業株式会社 半導体装置及びその製造方法
US10593630B2 (en) * 2018-05-11 2020-03-17 Advanced Semiconductor Engineering, Inc. Semiconductor package and method for manufacturing the same
WO2019222330A2 (en) * 2018-05-17 2019-11-21 Corning Incorporated Singulated electronic substrates on a flexible or rigid carrier and related methods
US10643957B2 (en) * 2018-08-27 2020-05-05 Nxp B.V. Conformal dummy die
US10755994B2 (en) 2018-10-29 2020-08-25 Advanced Semiconductor Engineering, Inc. Semiconductor package structure and semiconductor substrate

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030000736A1 (en) * 2001-06-29 2003-01-02 Sathe Ajit V. Arrangements to provide mechanical stiffening elements to a thin-core or coreless substrate
CN1409872A (zh) * 1999-12-14 2003-04-09 爱特梅尔股份有限公司 在晶片级上形成的集成电路封装
CN1505838A (zh) * 2001-04-19 2004-06-16 �Ҵ���˾ 在半导体或电介质晶片上制作的系统级封装
CN101542703A (zh) * 2006-08-31 2009-09-23 Ati科技无限责任公司 制造半导体的方法和设备
US20090261466A1 (en) * 2006-11-10 2009-10-22 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Vertical Interconnect Structure Using Stud Bumps
US20110068444A1 (en) * 2009-09-23 2011-03-24 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Open Cavity in TSV Interposer to Contain Semiconductor Die in WLCSMP

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5829128A (en) 1993-11-16 1998-11-03 Formfactor, Inc. Method of mounting resilient contact structures to semiconductor devices
US5806181A (en) 1993-11-16 1998-09-15 Formfactor, Inc. Contact carriers (tiles) for populating larger substrates with spring contacts
US5897326A (en) 1993-11-16 1999-04-27 Eldridge; Benjamin N. Method of exercising semiconductor devices
US5878486A (en) 1993-11-16 1999-03-09 Formfactor, Inc. Method of burning-in semiconductor devices
US5884398A (en) 1993-11-16 1999-03-23 Form Factor, Inc. Mounting spring elements on semiconductor devices
US6741085B1 (en) 1993-11-16 2004-05-25 Formfactor, Inc. Contact carriers (tiles) for populating larger substrates with spring contacts
US5983493A (en) 1993-11-16 1999-11-16 Formfactor, Inc. Method of temporarily, then permanently, connecting to a semiconductor device
US5852870A (en) 1996-04-24 1998-12-29 Amkor Technology, Inc. Method of making grid array assembly
US5859475A (en) 1996-04-24 1999-01-12 Amkor Technology, Inc. Carrier strip and molded flex circuit ball grid array
US6492203B1 (en) 1997-04-30 2002-12-10 Hitachi Chemical Company, Ltd. Semiconductor device and method of fabrication thereof
US6111324A (en) 1998-02-05 2000-08-29 Asat, Limited Integrated carrier ring/stiffener and method for manufacturing a flexible integrated circuit package
US6214640B1 (en) 1999-02-10 2001-04-10 Tessera, Inc. Method of manufacturing a plurality of semiconductor packages
TW560018B (en) 2001-10-30 2003-11-01 Asia Pacific Microsystems Inc A wafer level packaged structure and method for manufacturing the same
US7023347B2 (en) 2002-08-02 2006-04-04 Symbol Technologies, Inc. Method and system for forming a die frame and for transferring dies therewith
US6903456B2 (en) * 2003-10-08 2005-06-07 Tong Hsing Electric Industries, Ltd. Package carrier having multiple individual ceramic substrates
US7358119B2 (en) 2005-01-12 2008-04-15 Asat Ltd. Thin array plastic package without die attach pad and process for fabricating the same
US7538438B2 (en) * 2005-06-30 2009-05-26 Sandisk Corporation Substrate warpage control and continuous electrical enhancement
US7807505B2 (en) * 2005-08-30 2010-10-05 Micron Technology, Inc. Methods for wafer-level packaging of microfeature devices and microfeature devices formed using such methods
US7378733B1 (en) 2006-08-29 2008-05-27 Xilinx, Inc. Composite flip-chip package with encased components and method of fabricating same
US7683380B2 (en) 2007-06-25 2010-03-23 Dicon Fiberoptics, Inc. High light efficiency solid-state light emitting structure and methods to manufacturing the same
US7923298B2 (en) * 2007-09-07 2011-04-12 Micron Technology, Inc. Imager die package and methods of packaging an imager die on a temporary carrier
US20090091025A1 (en) 2007-10-04 2009-04-09 Agency For Science, Technology And Research Method for forming and releasing interconnects
US8124447B2 (en) 2009-04-10 2012-02-28 Advanced Semiconductor Engineering, Inc. Manufacturing method of advanced quad flat non-leaded package
US8569894B2 (en) 2010-01-13 2013-10-29 Advanced Semiconductor Engineering, Inc. Semiconductor package with single sided substrate design and manufacturing methods thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1409872A (zh) * 1999-12-14 2003-04-09 爱特梅尔股份有限公司 在晶片级上形成的集成电路封装
CN1505838A (zh) * 2001-04-19 2004-06-16 �Ҵ���˾ 在半导体或电介质晶片上制作的系统级封装
US20030000736A1 (en) * 2001-06-29 2003-01-02 Sathe Ajit V. Arrangements to provide mechanical stiffening elements to a thin-core or coreless substrate
CN101542703A (zh) * 2006-08-31 2009-09-23 Ati科技无限责任公司 制造半导体的方法和设备
US20090261466A1 (en) * 2006-11-10 2009-10-22 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Vertical Interconnect Structure Using Stud Bumps
US20110068444A1 (en) * 2009-09-23 2011-03-24 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Open Cavity in TSV Interposer to Contain Semiconductor Die in WLCSMP

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104718519A (zh) * 2013-08-23 2015-06-17 林龙辰 工艺模块及其制造方法和利用该工艺模块的基板加工方法
CN109964277A (zh) * 2016-10-20 2019-07-02 德州仪器公司 用于检测及移除有缺陷集成电路封装的方法及设备
CN109964277B (zh) * 2016-10-20 2023-08-11 德州仪器公司 用于检测及移除有缺陷集成电路封装的方法及设备
CN109979832A (zh) * 2017-12-20 2019-07-05 力成科技股份有限公司 封装结构及其制造方法
WO2019161641A1 (zh) * 2018-02-24 2019-08-29 华为技术有限公司 一种芯片及封装方法
US11276645B2 (en) 2018-02-24 2022-03-15 Huawei Technologies Co., Ltd. Encapsulation of a substrate electrically connected to a plurality of pin arrays
CN109545694A (zh) * 2018-11-13 2019-03-29 无锡中微高科电子有限公司 一种破损基板的模封方法
CN110444480A (zh) * 2019-07-24 2019-11-12 浙江荷清柔性电子技术有限公司 制作柔性芯片的方法、柔性芯片

Also Published As

Publication number Publication date
TW201301415A (zh) 2013-01-01
CN102709202B (zh) 2015-07-01
KR20120109410A (ko) 2012-10-08
US8367475B2 (en) 2013-02-05
TWI541918B (zh) 2016-07-11
HK1169744A1 (zh) 2013-02-01
US20120241955A1 (en) 2012-09-27
KR101402868B1 (ko) 2014-06-03

Similar Documents

Publication Publication Date Title
CN102709202B (zh) 一种集成电路封装及其组装方法
KR102637279B1 (ko) 매립된 인덕터 또는 패키지를 갖는 집적 sip 모듈을 형성하는 반도체 소자 및 방법
TWI838944B (zh) 半導體裝置與形成嵌入式晶粒基板的方法以及具有其之系統級封裝模組
CN107275294B (zh) 薄型芯片堆叠封装构造及其制造方法
KR101476894B1 (ko) 다중 다이 패키징 인터포저 구조 및 방법
CN107978532A (zh) 形成堆叠式封装结构的方法
CN102768962A (zh) 一种集成电路封装及其组装方法
CN103715166A (zh) 用于部件封装件的装置和方法
CN102386106A (zh) 部分图案化的引线框以及在半导体封装中制造和使用其的方法
US20110053318A1 (en) Fabrication method of package structure
KR101563909B1 (ko) 패키지 온 패키지 제조 방법
US20080296759A1 (en) Semiconductor packages
US20160204082A1 (en) Method of manufacturing semiconductor device
CN113161333A (zh) 半导体封装
KR20160135688A (ko) 박형 샌드위치 임베디드 패키지
KR101573281B1 (ko) 재배선층을 이용한 적층형 반도체 패키지 및 이의 제조 방법
JP5667381B2 (ja) 半導体装置及びその製造方法
TWI768874B (zh) 封裝結構及其製作方法
KR101573314B1 (ko) 패키지 온 패키지
US20160056094A1 (en) Ball grid array package with more signal routing structures
JP2009060004A (ja) 半導体装置の製造方法
CN110875294B (zh) 半导体装置的封装结构及其制造方法
KR101502428B1 (ko) 반도체 패키지 및 이의 제조 방법
CN219917165U (zh) 半导体封装装置
CN109427695B (zh) 封装结构及其制作方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1169744

Country of ref document: HK

C14 Grant of patent or utility model
GR01 Patent grant
REG Reference to a national code

Ref country code: HK

Ref legal event code: GR

Ref document number: 1169744

Country of ref document: HK

TR01 Transfer of patent right

Effective date of registration: 20170309

Address after: Singapore Singapore

Patentee after: Avago Technologies Fiber IP Singapore Pte. Ltd.

Address before: Park Road, Irvine, California, USA, 16215, 92618-7013

Patentee before: Zyray Wireless Inc.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20181022

Address after: Singapore Singapore

Patentee after: Annwa high tech Limited by Share Ltd

Address before: Singapore Singapore

Patentee before: Avago Technologies Fiber IP Singapore Pte. Ltd.

TR01 Transfer of patent right