CN102084486A - 薄膜晶体管及显示装置 - Google Patents

薄膜晶体管及显示装置 Download PDF

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Publication number
CN102084486A
CN102084486A CN2009801256879A CN200980125687A CN102084486A CN 102084486 A CN102084486 A CN 102084486A CN 2009801256879 A CN2009801256879 A CN 2009801256879A CN 200980125687 A CN200980125687 A CN 200980125687A CN 102084486 A CN102084486 A CN 102084486A
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film
oxide semiconductor
protective
thin film
semiconductor film
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Chinese (zh)
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诸泽成浩
荒井俊明
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN2009801256879A 2008-07-03 2009-06-24 薄膜晶体管及显示装置 Pending CN102084486A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-174469 2008-07-03
JP2008174469A JP5584960B2 (ja) 2008-07-03 2008-07-03 薄膜トランジスタおよび表示装置
PCT/JP2009/061507 WO2010001783A1 (ja) 2008-07-03 2009-06-24 薄膜トランジスタおよび表示装置

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CN102084486A true CN102084486A (zh) 2011-06-01

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US (1) US20110095288A1 (enExample)
JP (1) JP5584960B2 (enExample)
KR (1) KR20110025768A (enExample)
CN (1) CN102084486A (enExample)
WO (1) WO2010001783A1 (enExample)

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CN103022143A (zh) * 2011-09-27 2013-04-03 株式会社东芝 薄膜晶体管、用于制造该薄膜晶体管的方法、以及显示设备
CN104009092A (zh) * 2013-02-21 2014-08-27 三星显示有限公司 薄膜晶体管及其制造方法
CN104465783A (zh) * 2013-09-23 2015-03-25 三星显示有限公司 薄膜晶体管及其制造方法
CN103187415B (zh) * 2011-12-29 2015-07-15 元太科技工业股份有限公司 薄膜晶体管阵列基板及其制造方法与退火炉
US9293589B2 (en) 2012-01-25 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN107293493A (zh) * 2017-06-06 2017-10-24 武汉华星光电技术有限公司 铟镓锌氧化物薄膜晶体管的制作方法
CN105409003B (zh) * 2013-07-24 2019-03-08 Imec 非营利协会 用于改善金属氧化物半导体层的导电率的方法
CN110416063A (zh) * 2019-06-27 2019-11-05 惠科股份有限公司 一种薄膜晶体管的制作方法及显示面板
CN111081734A (zh) * 2014-03-17 2020-04-28 松下电器产业株式会社 薄膜晶体管元件基板及其制造方法、和有机el显示装置

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JP5705559B2 (ja) * 2010-06-22 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置、及び、半導体装置の製造方法
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CN103022143B (zh) * 2011-09-27 2015-07-01 株式会社东芝 薄膜晶体管、用于制造该薄膜晶体管的方法、以及显示设备
CN103187415B (zh) * 2011-12-29 2015-07-15 元太科技工业股份有限公司 薄膜晶体管阵列基板及其制造方法与退火炉
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CN110416063B (zh) * 2019-06-27 2021-08-06 惠科股份有限公司 一种薄膜晶体管的制作方法及显示面板

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