CN102047397B - 使用锡焊膏进行的基板与焊件的接合方法 - Google Patents
使用锡焊膏进行的基板与焊件的接合方法 Download PDFInfo
- Publication number
- CN102047397B CN102047397B CN2009801204361A CN200980120436A CN102047397B CN 102047397 B CN102047397 B CN 102047397B CN 2009801204361 A CN2009801204361 A CN 2009801204361A CN 200980120436 A CN200980120436 A CN 200980120436A CN 102047397 B CN102047397 B CN 102047397B
- Authority
- CN
- China
- Prior art keywords
- mentioned
- metallization coating
- soldering
- substrate
- body part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 title claims abstract description 75
- 229910000679 solder Inorganic materials 0.000 title abstract 4
- 239000012298 atmosphere Substances 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims description 237
- 238000000576 coating method Methods 0.000 claims description 237
- 238000001465 metallisation Methods 0.000 claims description 217
- 238000005476 soldering Methods 0.000 claims description 215
- 229910045601 alloy Inorganic materials 0.000 claims description 141
- 239000000956 alloy Substances 0.000 claims description 141
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 103
- 239000000843 powder Substances 0.000 claims description 89
- 229910015363 Au—Sn Inorganic materials 0.000 claims description 75
- 229910020220 Pb—Sn Inorganic materials 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 238000002360 preparation method Methods 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 29
- 238000003466 welding Methods 0.000 description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 230000003647 oxidation Effects 0.000 description 14
- 238000007254 oxidation reaction Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000006071 cream Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 238000009689 gas atomisation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
- B23K35/007—Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of copper or another noble metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/268—Pb as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C11/00—Alloys based on lead
- C22C11/06—Alloys based on lead with tin as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29116—Lead [Pb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3201—Structure
- H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
- H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3205—Shape
- H01L2224/32052—Shape in top view
- H01L2224/32055—Shape in top view being circular or elliptic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83143—Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83194—Lateral distribution of the layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/95053—Bonding environment
- H01L2224/95085—Bonding environment being a liquid, e.g. for fluidic self-assembly
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01052—Tellurium [Te]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01088—Radium [Ra]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09372—Pads and lands
- H05K2201/09381—Shape of non-curved single flat metallic pad, land or exposed part thereof; Shape of electrode of leadless component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09372—Pads and lands
- H05K2201/09427—Special relation between the location or dimension of a pad or land and the location or dimension of a terminal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12486—Laterally noncoextensive components [e.g., embedded, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24777—Edge feature
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
在使用该锡焊膏进行的基板与焊件的接合方法中,在形成于上述基板上的金属化镀层与形成于上述焊件上的金属化镀层之间搭载或涂抹上述锡焊膏,然后在非氧化性气氛中进行回流焊处理,将上述基板与上述焊件接合。在上述基板的表面上形成的上述金属化镀层具有平面形状,该平面形状包含面积比上述焊件的上述金属化镀层面积小的金属化镀层本体部分和自上述金属化镀层本体部分的周围突出的锡焊引导部。
Description
技术领域
本发明涉及使用锡焊膏使焊件(被搭載物)与基板在相同位置和方向接合的方法,特别涉及使用Au-Sn合金锡焊膏使元件与基板在相同位置和方向接合的方法。
本申请是根据2008年6月12日在日本申请的特愿2008-154003号和2008年8月29日在日本申请的特愿2008-221633号主张优先权,并将这些内容援引到本说明书中。
背景技术
通常,LED(发光二极管)元件、GaAs光元件、GaAs高频元件、导热元件(熱伝素子)等半导体元件与基板的接合等是使用Au-Sn合金锡焊膏等。已知该Au-Sn合金锡焊膏是Au-Sn共晶合金气体雾化粉末与含有松香、活性剂、溶剂和增稠剂的市售助焊剂混合制作而成,其中,所述Au-Sn共晶合金气体雾化粉末具有以下组成:含有Sn:15~25%(质量)(优选Sn:20%(质量)),余量包含Au和不可避免的杂质。
使用该Au-Sn合金锡焊膏使元件与基板接合,其具有以下优点。Au-Sn合金锡焊接合层是Au-Sn锡焊合金,因此导热性良好,接合可靠性也高。另外Au-Sn合金锡焊膏是膏剂,因此可以一并供给多个接合部,并且可一并进行热处理。并且在回流焊时,助焊剂覆盖Au-Sn锡焊合金表面,因此氧化膜少。因此,接合时的熔融Au-Sn锡焊合金的流动性大,润湿性良好,可以将元件全面接合。并且接合时无需对元件施加过量的负载。
使用该Au-Sn合金锡焊膏将基板与元件接合时,首先,如图14A的纵截面图所示,是在形成于基板1的表面上的金属化镀层2之上搭载或涂抹Au-Sn合金锡焊膏3,在该Au-Sn合金锡焊膏3之上搭载元件4,使元件4的金属化镀层6与Au-Sn合金锡焊膏3相接。在该状态下加热,实施回流焊处理,然后冷却,则如图14B的纵截面图所示,经由Au-Sn合金锡焊接合层5,基板1与元件4接合(参照专利文献1等)。此时,通常形成于基板1的表面上的金属化镀层2的面积与元件4的金属化镀层6的面积相同或者比元件4的金属化镀层6的面积大。另外,元件4通常具有正方形状,也有的具有长方形状。
先行技术文献
专利文献
专利文献1:日本特开2007-61857号公报
发明内容
发明所要解决的课题
图15是由图14A的上方向所见的俯视图。如图15和图14A所示,在基板1的金属化镀层2之上搭载或涂抹Au-Sn合金锡焊膏3。该Au-Sn合金锡焊膏3之上搭载元件4,使其与基板1的金属化镀层2的中心部为同轴且在同一方向上。但是,如果在该状态下加热实施回流焊处理,则回流焊处理时,熔融的Au-Sn合金锡焊在基板1中的金属化镀层2的整个面上铺开,形成Au-Sn合金锡焊接合层5。同时,形成元件4暂时性地浮在熔融的Au-Sn合金锡焊上的状态,此时,元件4旋转或移动。冷却后,如由图14B的上方向所见的俯视图即图16所示,元件4多在相对于基板1的金属化镀层2、偏离基板1的金属化镀层2中心部的状态下,与金属化镀层2之上的Au-Sn合金锡焊接合层5锡焊接合。
特别是工业上将元件4与基板锡焊接合时,在较大的基板上形成许多排列的金属化镀层。该许多的金属化镀层之上分别搭载或涂抹Au-Sn合金锡焊膏,在该Au-Sn合金锡焊膏之上有规则地搭载元件。在该状态下装入加热炉,通过一次回流焊处理,将多个元件锡焊接合在基板上。该回流焊处理时,元件旋转,元件自中心部随机方向偏离,与排列整齐的基板的金属化镀层锡焊接合,不适合作为可出厂的成品。并且在今后的封装尺寸更加精细的时代,如果元件彼此的距离接近,则元件彼此可能发生接触。
解决课题的方法
为解决上述课题、实现所述目的,本发明采用了下述的方法。
(1)使用锡焊膏进行的基板与焊件的接合方法,该方法是在形成了金属化镀层的上述基板中的上述金属化镀层、与形成了金属化镀层的上述焊件中的上述金属化镀层之间搭载或涂抹上述锡焊膏,然后在非氧化气氛中进行回流焊处理,使上述基板与上述焊件接合,形成于上述基板的表面上的上述金属化镀层具有平面形状,该平面形状包含面积比上述焊件的上述金属化镀层的面积小的金属化镀层本体部分和由上述金属化镀层本体部分的周围突出的锡焊引导部(はんだ誘引部)。
(2)上述锡焊膏可以是Au-Sn合金锡焊膏,该Au-Sn合金锡焊膏是在Au-Sn锡焊合金粉末中混入助焊剂而得到的,其中,所述Au-Sn锡焊合金粉末含有20~25%(质量)的Sn,余量为Au和不可避免的杂质。
(3)上述锡焊膏还可以是Pb-Sn合金锡焊膏,该Pb-Sn合金锡焊膏是在Pb-Sn锡焊合金粉末中混入助焊剂而得到的,其中,所述Pb-Sn锡焊合金粉末含有35~60%(质量)的Pb,余量为Sn和不可避免的杂质。
(4)上述锡焊膏还可以是Pb-Sn合金锡焊膏,该Pb-Sn合金锡焊膏是在Pb-Sn锡焊合金粉末中混入助焊剂而得到的,其中,所述Pb-Sn锡焊合金粉末含有90~95%(质量)的Pb,余量为Sn和不可避免的杂质。
(5)上述锡焊膏还可以是无Pb锡焊膏,该无Pb锡焊膏是在无Pb锡焊合金粉末中混入助焊剂而得到的,其中,所述无Pb锡焊合金粉末含有40~100%(质量)的Sn,余量为选自Ag、Au、Cu、Bi、Sb、In和Zn的1种或2种以上金属和不可避免的杂质。
(6)上述焊件可以是元件。
(7)在上述基板上形成的上述金属化镀层可以是电极膜。
(8)本发明的另一方案涉及的使用锡焊膏进行的基板与焊件的接合方法具有以下步骤:在形成了金属化镀层的基板中的金属化镀层和在形成了金属化镀层的具有矩形的焊件上形成的金属化镀层之间搭载或涂抹锡焊膏的步骤;和在非氧化气氛中进行回流焊处理,使上述基板与上述焊件接合的步骤。在上述基板的表面上形成的上述金属化镀层具有平面形状,该平面形状包含面积比上述焊件的上述金属化镀层面积小的金属化镀层本体部分和自上述金属化镀层本体部分的周围突出的至少两个锡焊引导部,互相相邻的锡焊引导部的长度方向彼此所形成的角度与上述焊件的对角线彼此所形成的任何一个交叉角都相同。
(9)上述矩形可以是正方形状,也可以是长方形状。
(10)在基板的表面上形成的金属化镀层具有平面形状,该平面形状包含金属化镀层本体部分和自上述金属化镀层本体部分的周围突出的锡焊引导部。
(11)上述(10)所述的金属化镀层,其中,在上述基板上形成的上述金属化镀层是电极膜。
(12)形成了金属化镀层的基板,其中,上述金属化镀层具有平面形状,该平面形状包含金属化镀层本体部分和自上述金属化镀层本体部分的周围突出的锡焊引导部。
(13)上述(12)所述的基板,其中,上述金属化镀层是电极膜。
(14)上述锡焊膏可以是将至少含有Sn的锡焊合金粉末与助焊剂混合而得到的膏体。
(15)焊件与基板的接合体,该接合体是通过上述(1)~(9)中任一项所述的接合方法使焊件与上述基板接合。
(16)焊件与基板的接合体的制备方法,该方法是通过上述(1)~(9)中任一项所述的接合方法将焊件与上述基板接合,来制备接合体。
发明效果
根据本发明的基板与焊件的接合方法,可以符合所需位置和方向地将所有的焊件进行锡焊接合。
附图说明
图1是在根据本发明的方法将基板和元件进行接合的步骤中,用于说明回流焊处理前的构成全体情况的纵截面图。
图2A是本发明的方法中,用于说明回流焊处理前的构成的俯视图。
图2B是本发明的方法中,用于说明回流焊处理后的构成的俯视图。
图3A是本发明中,表示在基板上形成的金属化镀层的形状的俯视图。
图3B是在本发明中,表示在基板上形成的金属化镀层的形状的俯视图。
图4A是本发明的方法中,用于说明回流焊处理前的构成的俯视图。
图4B是本发明的方法中,用于说明回流焊处理后的构成的俯视图。
图5A是本发明的方法中,用于说明回流焊处理前的构成的俯视图。
图5B是本发明的方法中,用于说明回流焊处理后的构成的俯视图。
图6是本发明的另一实施方案中,表示金属化镀层与焊件的接合状态的俯视图。
图7是本发明的另一实施方案中,表示金属化镀层与焊件的接合状态的俯视图。
图8是本发明的另一实施方案中,表示金属化镀层与焊件的接合状态的俯视图。
图9是本发明的另一实施方案中,表示金属化镀层与焊件的接合状态的俯视图。
图10是本发明的另一实施方案中,表示金属化镀层与焊件的接合状态的俯视图。
图11是本发明的另一实施方案中,表示金属化镀层与焊件的接合状态的俯视图。
图12是本发明的另一实施方案中,表示金属化镀层与焊件的接合状态的俯视图。
图13是本发明的另一实施方案中,表示金属化镀层与焊件的接合状态的俯视图。
图14A是在以往的方法中,用于说明回流焊处理前的构成的纵截面图。
图14B是在以往的方法中,用于说明回流焊处理后的构成的纵截面图。
图15是自上观察图14A的状态下的基板与元件的俯视图。
图16是自上观察图14B的状态下的基板与元件的俯视图。
具体实施方式
本发明人等为了开发可以使元件相对于基板的金属化镀层总是保持相同位置且朝向一定的方向进行焊接的基板与元件的接合方法进行了研究。结果了解到,根据以下的实施方案,可以使焊接后的元件位置和朝向保持所需状态。
(i)如图1的纵截面图所示,使用锡焊膏13,经由基板10的金属化镀层12和元件14的金属化镀层16,将基板10与元件14接合。元件14的尺寸在本发明中没有限定,例如可以是一边的长度为50μm以上1cm以下、高度为10μm以上5000μm以下。例如,成品是一边的长度为950μm以上1100μm以下、高度为90μm以上110μm以下。通常在LED(发光二极管)元件、GaAs光元件、GaAs高频元件、导热元件等的半导体元件中,金属化镀层12在基板10上是空出一定的间隔形成多个。但是本发明中可以没有一定间隔,金属化镀层12可以是一个。该实施方案中,如图2A的俯视图所示,在基板10的表面上形成的金属化镀层12具有形成矩形(长方形状或正方形状)的金属化镀层本体部分12A和自金属化镀层本体部分12A的周围突出的锡焊引导部12B。该实施方案中,特别是细的矩形的锡焊引导部12B自本体部分12A的一个边的中央部垂直突出。锡焊引导部12B在该方案中是一定的宽度,也可以是向尖端变窄的梯形或三角形状。金属化镀层本体部分12A的面积优选为元件14的面积的30~95%左右。
对金属化镀层12的厚度没有限定,例如优选0.02μm以上50μm以下。更优选为例如0.05μm以上10μm以下。对金属化镀层12的最表面材质没有限定,从锡焊润湿性的角度考虑,优选为Au、Ag、Cu等。金属化镀层可通过电镀法或溅射法或涂层法等形成。对锡焊引导部12B的宽度W1没有限定,例如优选为本体部分12A的上述一边的长度的5~50%,更优选为10~40%。宽度W1过窄或过宽,均会使元件14对齐位置的效果降低。如图2B所示,锡焊引导部12B的长度L1可以是如下的程度:在将锡焊引导部12B的先端与元件14的角对齐、将锡焊引导部12B沿着元件14的对角线配置的状态下,金属化镀层12的后端金属化镀层12的全部区域恰好被元件14盖住。即,优选金属化镀层12的后端的两个角位于元件14的边的下面或接近于边。在满足上述条件的范围内,锡焊引导部12B的长度L1例如优选为金属化镀层本体部分12A的上述一边的长度的20~70%,更优选为30~50%。
在金属化镀层本体部分12A之上搭载Au-Sn合金锡焊膏13。焊膏13的搭载量可以与以往同样,具体来说,优选焊接后的锡焊接合层的厚度为1~25μm的程度,更优选为1~10μm。可以将具有比上述金属化镀层本体部分12A的面积大的面积的元件14以任意的方向搭载在Au-Sn合金锡焊膏13之上。此时,即使没有确定正确的位置,本发明中也可以通过锡焊引导部12B来将焊接后的元件14的朝向对齐。因此位置确定精度可以降低,在组装时可以降低这部分的制造成本。
在该状态下、在惰性气体气氛中进行回流焊处理,则锡焊膏13熔融,由于熔融锡焊的表面张力,向基板10的金属化镀层12与元件14的金属化镀层16的对向面积最大化的相对位置(图2B)旋转和移动。如图2B所示,在回流焊处理中,旋转至元件14的最长对角线(元件是正方形状或长方形状时为通常的对角线,是椭圆形时为长直径)与锡焊引导部12B的突出方向一致,进行焊接。因此,通过预先对齐焊件引导部12B的朝向,则同一形状的元件可以完全朝向一定的方向焊接。此时,元件14可以移动至2点式虚线部分14’。作为元件14可以在一定方向上进行焊接的原因,可能是由于自金属化镀层本体部分42A向锡焊引导部42B产生熔融锡焊的流动,使元件14旋转。
(ii)上述金属化镀层本体部分12A和自该金属化镀层本体部分12A的周围突出的锡焊引导部金属化镀层12B可以作为LED(发光二极管)元件、GaAs光元件、GaAs高频元件、导热元件等半导体元件等的电极膜使用。
(iii)上述(i)所示的现象并不限于基板和元件,对于基板上的一般焊件也会产生。因此也可适用于一般焊件。
(iv)锡焊膏优选为Au-Sn合金锡焊膏,代替上述Au-Sn合金锡焊膏,使用下述锡焊膏也可以获得同样的效果:Pb-Sn合金锡焊膏,该锡焊膏是在Pb-Sn锡焊合金粉末中混合助焊剂而得到的,其中,所述Pb-Sn锡焊合金粉末含有Pb:35~60%(质量),余量为Sn和不可避免的杂质;Pb-Sn合金锡焊膏,该锡焊膏是在Pb-Sn锡焊合金粉末中混合助焊剂而得到的,其中,所述Pb-Sn锡焊合金粉末含有Pb:90~95%(质量),余量为Sn和不可避免的杂质;无Pb锡焊膏,该锡焊膏是在无Pb锡焊合金粉末中混合助焊剂而得到的,其中,所述无Pb锡焊合金粉末含有Sn:40~100%(质量),余量为选自Ag、Au、Cu、Bi、Sb、In和Zn的1种或2种以上金属和不可避免的杂质。
本发明的其它实施方案如图3A~图13所示。
在基板上形成的金属化镀层本体部分的形状优选为与元件的形状相同的形状,但没有特别限定。例如,如图3A所示,金属化镀层22可以具有圆形的金属化镀层本体部分22A和自其外周沿半径方向突出的矩形的锡焊引导部22B。金属化镀层本体部分除此之外还可以有任意的平面形状。
锡焊引导部可以自金属化镀层本体部分周围的任意位置突出。例如,如图3B所示,锡焊引导部32B可以自正方形的金属化镀层本体部分32A的一个顶点沿对角线的延长方向突出,形成金属化镀层32。
(v)图4A是表示又一实施方案的俯视图。如图4A所示,在该实施方案中,在基板10的表面上形成的金属化镀层42具有正方形状的金属化镀层本体部分42A和自金属化镀层本体部分42A的四个边的中央部垂直突出的4个锡焊引导部42B。相邻的锡焊引导部42B彼此形成的角度是90度,与要接合的元件14的对角线所成的角度一致。在该金属化镀层本体部分42A之上搭载Au-Sn合金锡焊膏13,在该Au-Sn合金锡焊膏13之上,朝向任意的方向搭载具有比上述金属化镀层本体部分42A的面积大的面积的正方形状的元件14。在该状态下进行回流焊处理,则由于熔融锡焊的表面张力,如图4B的俯视图所示,元件14旋转后焊接,使正方形状的元件14的对角线与锡焊引导部42B的长度方向一致。其结果,基板10上的所有正方形状的元件均朝向一定的方向进行焊接。其它的条件均与实施方案1同样。
(vi)使用具有长方形状的元件24时,如图5A所示,在基板表面上形成金属化镀层52,该金属化镀层52具有金属化镀层本体部分52A和自金属化镀层本体部分52A突出形成的4个锡焊引导部52B,该4个锡焊引导部52B以与具有长方形状的元件24的对角线相同的角度交叉。上述金属化镀层本体部分52A之上搭载Au-Sn合金锡焊膏13。该Au-Sn合金锡焊膏13之上朝向任意的方向搭载具有长方形状的元件24。在该状态下进行回流焊处理,则如图5B所示,具有长方形状的元件24的对角线方向与锡焊引导部52B的方向一致。其结果,可以朝向一定的方向焊接具有长方形状的元件24。其它条件均可以与实施方案1同样。
(vii)上述(v)所示的现象并不限于基板和正方形状元件,对于基板上的一般的具有正方形状的焊件均会产生。并且,上述(vi)所示的现象并不限于基板和长方形状的元件,对于与基板接合的一般的具有长方形状的焊件均会产生。因此,将该现象适用于基板与具有正方形状的焊件或基板与具有长方形状的焊件的锡焊接合,可以使焊件与基板以一定的位置和方向锡焊接合。
图6~10均表示具有金属化镀层本体部分和以与正方形状的焊件(元件)14的对角线相同角度交叉并自该金属化镀层本体部分的周围突出的多个锡焊引导部的金属化镀层。为了将元件与基板连接,这些金属化镀层本体部分之上搭载Au-Sn合金锡焊膏。这些Au-Sn合金锡焊膏之上可以朝任意的方向搭载具有比上述金属化镀层本体部分的面积大的面积的正方形状的焊件(元件)14。图6~10也表示在该状态下进行回流焊处理后的正方形状的焊件(元件)14被焊接的状态。
如图6的实施方案所示,金属化镀层本体部分62A的尺寸可以是与金属化镀层62的锡焊引导部62B的宽度相同的尺寸。金属化镀层本体部分62A只要是可搭载或涂抹锡焊膏的面积即可。
锡焊引导部的形状如图4B所示,优选为一定宽度的带状,但并不限于此。例如,锡焊引导部的形状可以具有三角形状。例如,如图7所示,可以是具有正方形状的金属化镀层本体部分72A和自其四边分别延展的三角形状的锡焊引导部72B的金属化镀层72。如图10所示,还可以是具有正方形状的金属化镀层本体部分102A和自其相邻两边延展的2个三角形状的锡焊引导部102B的金属化镀层102。
锡焊引导部的数目如图4B、图6和图7所示,优选为4个。但是,如图8~10所示,也可以为2个,还可以是3个或5个以上。例如,如图8所示,可以是具有正方形状的金属化镀层本体部分82A和自其相邻的两边垂直延展的2个锡焊引导部82B的金属化镀层82。如图9所示,还可以是具有正方形状的金属化镀层本体部分92A和与该金属化镀层本体部分92A的一个边具有相同宽度的2个锡焊引导部92B的金属化镀层92。
图11表示具有长方形状的金属化镀层本体部分112A和自该金属化镀层本体部分112A的一个短边的两端突出的2根锡焊引导部112B的金属化镀层。2根锡焊引导部112B形成与长方形状的焊件(元件)的2根的对角线的交叉角相同的角度。为了将元件与基板连接,在金属化镀层本体部分112A之上搭载Au-Sn合金锡焊膏。Au-Sn合金锡焊膏之上朝向任意的方向搭载具有比上述金属化镀层本体部分的面积大的面积的长方形状的焊件(元件)34。图11表示在该状态下进行回流焊处理后的长方形状的焊件(元件)34被焊接的状态。
图12表示具有长方形状的金属化镀层本体部分122A和自该金属化镀层本体部分122A的3个角突出的3根锡焊引导部122B的金属化镀层。3根锡焊引导部122B互相形成与对应的位置中的长方形状的焊件(元件)的2根的对角线的交叉角相同的角度。为了将元件与基板连接,在金属化镀层本体部分122A之上搭载Au-Sn合金锡焊膏。Au-Sn合金锡焊膏之上朝向任意的方向搭载长方形状的焊件(元件)34,通过回流焊处理,可得到图12的焊接状态。
金属化镀层的形状,如图13所示,可以是由正方形状的金属化镀层的各边的中央部切除半园状的部分后的形状。该金属化镀层132由金属化镀层本体部分132A和自其周边向四方延展的4个锡焊引导部132B构成。
实施例1
使用含有Sn:20%(质量)、余量部分具有含Au的成分组成、具有平均粒径D50:11.1μm、最大粒径:20.1μm的Au-Sn合金锡焊粉末作为锡焊合金。该Au-Sn合金锡焊粉末中配合市售的RMA助焊剂,得到RMA助焊剂:8.0%(质量),余量为Au-Sn合金锡焊粉末的配比组成,进行混合,制备具有膏粘度:85Pa·s的Au-Sn合金锡焊膏。进一步将该Au-Sn合金锡焊膏填充到注射器(シリンジ)中,安装在分配装置(デイスペンサ一装置)(武藏エンジニアリング制造,型号:ML-606GX)中。
进一步准备具有长:400μm、宽:400μm、高度:100μm尺寸的50个LED元件,在这些LED元件的一个面的整面上实施具有厚度:3μm、长:400μm、宽:400μm尺寸的Au电镀。
再准备氧化铝制基板,在该氧化铝制基板的表面形成图2A所示的金属化镀层,如图1所示,将其以600μm的间隔在50处形成一列,其中,所述金属化镀层包含金属化镀层本体部分和锡焊引导部,所述金属化镀层本体部分形成了具有长:200μm、宽:200μm的尺寸,包含具有厚度:10μm的Cu层、具有厚度:5μm的Ni层和具有厚度:0.1μm的Au层的复合金属化镀层;所述锡焊引导部形成了与金属化镀层本体部分具有相同结构的复合金属化镀层,具有宽:100μm、长:90μm的尺寸。锡焊引导部的突出是与金属化镀层本体部分的列方向为相同方向。
在包含这些金属化镀层本体部分和锡焊引导部的50处金属化镀层中,在金属化镀层本体部分的中心位置,通过事先准备的分配装置涂抹0.03mg量的Au-Sn合金锡焊膏。使用贴装机,在该Au-Sn合金锡焊膏之上搭载事先准备的50个LED元件。在该状态下、在氮气氛中实施温度:300℃、保持30秒条件下的回流焊处理。然后进行冷却,使用三维测定仪(Nikon制造,NEXIV VMR-3020),对于排成一列的50个LED元件位置测定元件中心位置。这里,将x轴方向上排成一列的50个接合的LED元件的中心位置沿y轴方向的偏离(ブレ)作为相对于y轴位置的平均标准偏差进行计算。其结果,元件中心位置:y轴偏离±4.2μm,可知元件的位置精度非常高。
实施例2
使用含有Pb:37%(质量)、余量部分具有含Sn的成分组成、具有平均粒径D50:11.4μm、最大粒径:14.5μm的Pb-Sn合金锡焊粉末作为锡焊合金。该Pb-Sn合金锡焊粉末中配合市售的RMA助焊剂,得到RMA助焊剂:11.0%(质量),余量为Pb-Sn合金锡焊粉末的配比组成,进行混合,制备具有膏粘度:120Pa·s的Pb-Sn合金锡焊膏。进一步将该Pb-Sn合金锡焊膏填充到注射器中,安装在分配装置(武藏エンジニアリング制造,型号:ML-606GX)中。
通过该分配装置,将0.02mg量的Pb-Sn合金锡焊膏涂抹在实施例1中制备的包含金属化镀层本体部分和锡焊引导部的50处金属化镀层之上。在该Pb-Sn合金锡焊膏之上搭载事先准备的50个LED元件。在该状态下、在氮气氛中实施温度:220℃、保持30秒条件下的回流焊处理。然后进行冷却,使用三维测定仪(Nikon制造,NEXIVVMR-3020),对于50个LED元件位置测定元件中心位置。这里,将x轴方向上排成一列的50个接合的LED元件的中心位置沿y轴方向的偏离作为相对于y轴位置的平均标准偏差进行计算。其结果,元件中心位置:y轴偏离±5.8μm,可知元件的位置精度非常高。
实施例3
使用含有Pb:95%(质量)、余量部分具有含Sn的成分组成、具有平均粒径D50:11.7μm、最大粒径:14.8μm的Pb-Sn合金锡焊粉末作为锡焊合金。该Pb-Sn合金锡焊粉末中配合市售的RA助焊剂,得到RA助焊剂:10.0%(质量),余量为Pb-Sn合金锡焊粉末的配比组成,进行混合,制备具有膏粘度:80Pa·s的Pb-Sn合金锡焊膏。进一步将该Pb-Sn合金锡焊膏填充到注射器中,安装在分配装置(武藏エンジニアリング制造,型号:ML-606GX)中。
通过该分配装置,将0.03mg量的Pb-Sn合金锡焊膏涂抹在实施例1中制备的包含金属化镀层本体部分和锡焊引导部的50处金属化镀层之上。在该Pb-Sn合金锡焊膏之上搭载事先准备的50个LED元件,在氮气氛中实施温度:330℃、保持30秒条件下的回流焊处理。然后进行冷却,使用三维测定仪(Nikon制造,NEXIV VMR-3020),对于50个LED元件位置测定元件中心位置。这里,将x轴方向上排成一列的50个接合的LED元件的中心位置沿y轴方向的偏离作为相对于y轴位置的平均标准偏差进行计算。其结果,元件中心位置:y轴偏离±6.7μm,可知元件的位置精度非常高。
实施例4
使用含有Sn:96.5%(质量)、Ag:3.0%(质量)、余量部分具有含Cu的成分组成、具有平均粒径D50:10.8μm、最大粒径:14.1μm的无Pb锡焊粉末作为锡焊合金。该无Pb锡焊粉末中配合市售的RMA助焊剂,得到RMA助焊剂:12.5%(质量),余量为无Pb锡焊粉末的配比组成,进行混合,制备具有膏粘度:72Pa·s的无Pb锡焊膏。进一步将该无Pb锡焊膏填充到注射器中,安装在分配装置(武藏エンジニアリング制造,型号:ML-606GX)中。
通过该分配装置,将0.02mg量的无Pb锡焊膏涂抹在实施例1中制备的包含金属化镀层本体部分和锡焊引导部的50处金属化镀层之上。在该无Pb锡焊膏之上搭载事先准备的50个LED元件,在氮气氛中实施温度:240℃、保持30秒条件下的回流焊处理。然后进行冷却,使用三维测定仪(Nikon制造,NEXIV VMR-3020),对于50个LED元件位置测定元件中心位置。这里,将x轴方向上排成一列的50个接合的LED元件的中心位置沿y轴方向的偏离作为相对于y轴位置的平均标准偏差进行计算。其结果,元件中心位置:y轴偏离±5.1μm,可知元件的位置精度非常高。(以往例1)
使用含有Sn:20%(质量)、余量部分具有含Au的成分组成、具有平均粒径D50:11.1μm、最大粒径:20.1μm的Au-Sn合金锡焊粉末作为锡焊合金。该Au-Sn合金锡焊粉末中配合市售的RMA助焊剂,得到RMA助焊剂:8.0%(质量),余量为Au-Sn合金锡焊粉末的配比组成,进行混合,制备具有膏粘度:85Pa·s的Au-Sn合金锡焊膏。进一步将该Au-Sn合金锡焊膏填充到注射器中,安装在分配装置(武藏エンジニアリング制造,型号:ML-606GX)中。
进一步准备具有长:400μm、宽:400μm、高度:100μm尺寸的50个LED元件,在这些LED元件的一个面的整面上实施具有厚度:3μm、长:400μm、宽:400μm尺寸的Au电镀。
再准备氧化铝制基板,在该氧化铝制基板的表面形成图15所示的金属化镀层,将其以600μm的间隔在50处形成一列,其中,所述金属化镀层形成的是复合金属化镀层,该复合金属化镀层具有长:500μm、宽:500μm的尺寸,包含具有厚度:10μm的Cu层、具有厚度:5μm的Ni层和具有厚度:0.1μm的Au层。
在包含这些金属化镀层的50处金属化镀层的中心位置,通过事先准备的分配装置涂抹0.03mg量的Au-Sn合金锡焊膏。使用贴装机,在该Au-Sn合金锡焊膏之上搭载事先准备的50个LED元件。在该状态下、在氮气氛中实施温度:300℃、保持30秒条件下的回流焊处理。然后进行冷却,使用三维测定仪(Nikon制造,NEXIV VMR-3020),对于排成一列的50个LED元件位置测定元件中心位置。这里,将x轴方向上排成一列的50个接合的LED元件的中心位置沿y轴方向的偏离作为相对于y轴位置的平均标准偏差进行计算。其结果,元件中心位置:y轴偏离±38.2μm,可知元件的位置精度低。
实施例5
使用含有Sn:20%(质量)、余量部分具有含Au的成分组成、具有平均粒径D50:11.1μm、最大粒径:20.1μm的Au-Sn合金锡焊粉末作为锡焊合金。该Au-Sn合金锡焊粉末中配合市售的RMA助焊剂,得到RMA助焊剂:8.0%(质量),余量为Au-Sn合金锡焊粉末的配比组成,进行混合,制备具有膏粘度:85Pa·s的Au-Sn合金锡焊膏。进一步将该Au-Sn合金锡焊膏填充到注射器中,安装在分配装置(武藏エンジニアリング制造,型号:ML-606GX)中。
进一步准备具有长:400μm、宽:400μm、高度:100μm尺寸的、具有正方形状的50个LED元件,在这些LED元件的一个面的整面上实施具有厚度:3μm、长:400μm、宽:400μm尺寸的Au电镀。
再准备氧化铝制基板,在该氧化铝制基板的表面上形成图4B所示的平面形状的金属化镀层,将其以600μm的间隔在50处形成一列,其中,所述平面形状的金属化镀层包含金属化镀层本体部分和锡焊引导部,所述金属化镀层本体部分形成了具有长:200μm、宽:200μm的尺寸,包含具有厚度:10μm的Cu层、具有厚度:5μm的Ni层和具有厚度:0.1μm的Au层的复合金属化镀层;所述锡焊引导部包含具有自上述金属化镀层本体部分呈“十”字状突出的宽:50μm、长度:150μm的尺寸,形成与上述金属化镀层本体部分具有相同结构的复合金属化镀层。
在包含这些金属化镀层本体部分和锡焊引导部的50处金属化镀层中,在金属化镀层本体部分的中心位置,通过事先准备的分配装置涂抹0.03mg量的Au-Sn合金锡焊膏。使用贴装机,在该Au-Sn合金锡焊膏之上搭载事先准备的50个LED元件。在该状态下、在氮气氛中实施温度:300℃、保持30秒条件下的回流焊处理。然后进行冷却,使用三维测定仪(Nikon制造,NEXIV VMR-3020),对于排成一列的50个LED元件位置测定元件中心位置。这里,分别将50个接合的LED元件的中心位置沿x轴方向的偏离和沿y轴方向的偏离作为相对于x轴位置的平均标准偏差和相对于y轴位置的平均标准偏差进行计算。其结果,元件中心位置的x轴偏离为±4.8μm,y轴偏离为±5.2μm,可知元件的位置精度非常高。
实施例6
使用含有Pb:37%(质量)、余量部分具有含Sn的成分组成、具有平均粒径D50:11.4μm、最大粒径:14.5μm的Pb-Sn合金锡焊粉末作为锡焊合金。该Pb-Sn合金锡焊粉末中配合市售的RMA助焊剂,得到RMA助焊剂:11.0%(质量),余量为Pb-Sn合金锡焊粉末的配比组成。进一步混合,制备具有膏粘度:120Pa·s的Pb-Sn合金锡焊膏,将该Pb-Sn合金锡焊膏填充到注射器中,安装在分配装置(武藏エンジニアリング制造,型号:ML-606GX)中。
进一步准备具有长:200μm、宽:400μm、高度:100μm尺寸的、具有长方形状的50个LED元件,在这些LED元件的一个面的整面上实施具有厚度:3μm、长:200μm、宽:400μm尺寸的Au电镀。
再准备氧化铝制基板,在该氧化铝制基板的表面上形成图5B所示的平面形状的金属化镀层,将其以600μm的间隔在50处形成一列,其中,所述平面形状的金属化镀层包含金属化镀层本体部分和4个锡焊引导部,所述金属化镀层本体部分形成了具有长:100μm、宽:200μm的尺寸,包含具有厚度:10μm的Cu层、具有厚度:5μm的Ni层和具有厚度:0.1μm的Au层的复合金属化镀层;所述4个锡焊引导部包含复合金属化镀层,该复合金属化镀层具有以与长方形状的LED元件的对角线相同的角度自上述金属化镀层本体部分突出的宽:50μm、长度:150μm的尺寸,结构与上述金属化镀层本体部分相同。
在包含这些金属化镀层本体部分和锡焊引导部的50处金属化镀层中,在金属化镀层本体部分的中心位置,通过事先准备的分配装置涂抹0.02mg量的Pb-Sn合金锡焊膏。使用贴装机,在该Pb-Sn合金锡焊膏之上搭载事先准备的50个LED元件。在该状态下、在氮气氛中实施温度:220℃、保持30秒条件下的回流焊处理。然后进行冷却,使用三维测定仪(Nikon制造,NEXIV VMR-3020),对于排成一列的50个LED元件位置测定元件中心位置。这里,分别将50个接合的LED元件的中心位置沿x轴方向的偏离和沿y轴方向的偏离作为相对于x轴位置的平均标准偏差和相对于y轴位置的平均标准偏差进行计算。其结果,元件中心位置的x轴偏离为±7.1μm,y轴偏离为±6.8μm,可知元件的位置精度非常高。
实施例7
使用含有Pb:95%(质量)、余量部分具有含Sn的成分组成、具有平均粒径D50:11.7μm、最大粒径:14.8μm的Pb-Sn合金锡焊粉末作为锡焊合金。该Pb-Sn合金锡焊粉末中配合市售的RA助焊剂,得到RA助焊剂:10.0%(质量),余量为Pb-Sn合金锡焊粉末的配比组成,进行混合,制备具有膏粘度:80Pa·s的Pb-Sn合金锡焊膏。进一步将该Pb-Sn合金锡焊膏填充到注射器中,安装在分配装置(武藏エンジニアリング制造,型号:ML-606GX)中。
进一步准备具有长:200μm、宽:400μm、高度:100μm尺寸的、具有长方形状的50个LED元件,在这些LED元件的一个面的整面上实施具有厚度:3μm、长:200μm、宽:400μm尺寸的Au电镀。
再准备氧化铝制基板,在该氧化铝制基板的表面形成图11所示的平面形状的金属化镀层,将其以600μm的间隔在50处形成一列,其中,所述平面形状的金属化镀层包含金属化镀层本体部分和2个锡焊引导部,所述金属化镀层本体部分形成了具有长:100μm、宽:200μm的尺寸,包含具有厚度:10μm的Cu层、具有厚度:5μm的Ni层和具有厚度:0.1μm的Au层的复合金属化镀层;所述2个锡焊引导部包含复合金属化镀层,该复合金属化镀层具有以与长方形状的LED元件的对角线相同的角度自上述金属化镀层本体部分突出的宽:100μm、长度:150μm的尺寸,结构与上述金属化镀层本体部分相同。
在包含这些金属化镀层本体部分和锡焊引导部的50处金属化镀层中,在金属化镀层本体部分的中心位置,通过事先准备的分配装置涂抹0.03mg量的Pb-Sn合金锡焊膏。使用贴装机,在该Pb-Sn合金锡焊膏之上搭载事先准备的50个LED元件。在该状态下、在氮气氛中实施温度:330℃、保持30秒条件下的回流焊处理。然后进行冷却,使用三维测定仪(Nikon制造,NEXIV VMR-3020),对于排成一列的50个LED元件位置测定元件中心位置。这里,分别将50个接合的LED元件的中心位置沿x轴方向的偏离和沿y轴方向的偏离作为相对于x轴位置的平均标准偏差和相对于y轴位置的平均标准偏差进行计算。其结果,元件中心位置的x轴偏离为±6.6μm,y轴偏离为±7.2μm,可知元件的位置精度非常高。
实施例8
使用含有Sn:96.5%(质量)、Ag:3.0%(质量)、余量部分具有含Cu的成分组成、具有平均粒径D50:10.8μm、最大粒径:14.1μm的无Pb锡焊粉末作为锡焊合金。该无Pb锡焊粉末中配合市售的RMA助焊剂,得到RMA助焊剂:12.5%(质量),余量为无Pb锡焊粉末的配比组成,进行混合,制备具有膏粘度:72Pa·s的无Pb锡焊膏。进一步将该无Pb锡焊膏填充到注射器中,安装在分配装置(武藏エンジニアリング制造,型号:ML-606GX)中。
进一步准备具有长:400μm、宽:400μm、高度:100μm尺寸的、具有正方形状的50个LED元件,在这些LED元件的一个面的整面上实施具有厚度:3μm、长:400μm、宽:400μm尺寸的Au电镀。
再准备氧化铝制基板,在该氧化铝制基板的表面上形成图8所示的平面形状的金属化镀层,将其以600μm的间隔在50处形成一列,其中,所述平面形状的金属化镀层包含金属化镀层本体部分和2个锡焊引导部,所述金属化镀层本体部分形成了具有长:200μm、宽:200μm的尺寸,包含具有厚度:10μm的Cu层、具有厚度:5μm的Ni层和具有厚度:0.1μm的Au层的复合金属化镀层;所述2个锡焊引导部包含复合金属化镀层,该复合金属化镀层具有自上述金属化镀层本体部分呈“L”字状突出的宽:100μm、长度:200μm的尺寸,结构与上述金属化镀层本体部分相同。
在包含这些金属化镀层本体部分和锡焊引导部的50处金属化镀层中,在金属化镀层本体部分的中心位置,通过事先准备的分配装置涂抹0.02mg量的无Pb锡焊膏。使用贴装机,在该无Pb锡焊膏之上搭载事先准备的50个LED元件。在该状态下、在氮气氛中实施温度:240℃、保持30秒条件下的回流焊处理。然后进行冷却,使用三维测定仪(Nikon制造,NEXIV VMR-3020),对于排成一列的50个LED元件位置测定元件中心位置。这里,分别将50个接合的LED元件的中心位置沿x轴方向的偏离和沿y轴方向的偏离作为相对于x轴位置的平均标准偏差和相对于y轴位置的平均标准偏差进行计算。其结果,元件中心位置的x轴偏离为±9.3μm,y轴偏离为±8.9μm,可知元件的位置精度非常高。
(以往例2)
使用含有Sn:20%(质量)、余量部分具有含Au的成分组成、具有平均粒径D50:11.1μm、最大粒径:20.1μm的Au-Sn合金锡焊粉末作为锡焊合金。该Au-Sn合金锡焊粉末中配合市售的RMA助焊剂,得到RMA助焊剂:8.0%(质量),余量为Au-Sn合金锡焊粉末的配比组成,进行混合,制备具有膏粘度:85Pa·s的Au-Sn合金锡焊膏。进一步将该Au-Sn合金锡焊膏填充到注射器中,安装在分配装置(武藏エンジニアリング制造,型号:ML-606GX)中。
进一步准备具有长:400μm、宽:400μm、高度:100μm尺寸的50个LED元件,在这些LED元件的一个面的整面上实施具有厚度:3μm、长:400μm、宽:400μm尺寸的Au电镀。
再准备氧化铝制基板,在该氧化铝制基板的表面上形成了金属化镀层,将其以600μm的间隔在50处形成一列,其中,所述金属化镀层形成的是复合金属化镀层,该复合金属化镀层具有长:500μm、宽:500μm的尺寸,包含具有厚度:10μm的Cu层、具有厚度:5μm的Ni层和具有厚度:0.1μm的Au层。
在包含这些金属化镀层的50处金属化镀层的中心位置,通过事先准备的分配装置涂抹0.03mg量的Au-Sn合金锡焊膏。使用贴装机,在该Au-Sn合金锡焊膏之上搭载事先准备的50个LED元件。在该状态下、在氮气氛中实施温度:300℃、保持30秒条件下的回流焊处理。然后进行冷却,使用三维测定仪(Nikon制造,NEXIV VMR-3020),对于排成一列的50个LED元件位置测定元件中心位置。这里,分别将x轴方向上排成一列的50个接合的LED元件的中心位置沿x轴方向的偏离和沿y轴方向的偏离作为相对于x轴位置的平均标准偏差和相对于y轴位置的平均标准偏差进行计算。其结果,元件中心位置的x轴偏离±42.1μm,y轴偏离±37.5μm,可知元件的位置精度低。
产业实用性
本发明提供使用锡焊膏使焊件相对于基板在相同位置和方向接合的方法,特别提供使用Au-Sn合金锡焊膏使元件相对于基板在相同位置和方向接合的方法,因此具有产业上的实用性。
符号说明
1基板
2金属化镀层
3Au-Sn合金锡焊膏
4元件、焊件
5Au-Sn合金锡焊接合层
6金属化镀层
10基板
12金属化镀层
12A金属化镀层本体部分
12B锡焊引导部
13Au-Sn合金锡焊膏
14具有正方形状的元件、焊件
16金属化镀层
24具有长方形状的元件、焊件
42金属化镀层
42A金属化镀层本体部分
42B锡焊引导部
52金属化镀层
52A金属化镀层本体部分
52B锡焊引导部
Claims (14)
1.使用锡焊膏进行的基板与焊件的接合方法,该方法具有以下步骤:
在形成于上述基板上的金属化镀层和形成于上述焊件上的金属化镀层之间搭载或涂抹上述锡焊膏的步骤;和
在非氧化气氛中将它们进行回流焊处理,使锡焊熔融,通过锡焊使上述基板与上述焊件接合的步骤,
该方法的特征在于:形成于上述基板上的上述金属化镀层具有平面形状,该平面形状包含面积比上述焊件的上述金属化镀层面积小的金属化镀层本体部分和自上述金属化镀层本体部分的边的中央部垂直突出的锡焊引导部,
上述锡焊引导部为一定幅度,且
上述锡焊引导部的宽度为上述金属化镀层本体部分的一边的长度的5~50%,
上述锡焊引导部的长度为上述金属化镀层本体部分的上述一边的长度的20~70%,
在上述金属化镀层本体部分之上搭载上述锡焊膏。
2.权利要求1所述的使用锡焊膏进行的基板与焊件的接合方法,其中,上述锡焊膏是Au-Sn合金锡焊膏,该Au-Sn合金锡焊膏是在Au-Sn锡焊合金粉末中混入助焊剂而得到的,其中,所述Au-Sn锡焊合金粉末含有20~25%(质量)的Sn,余量为Au和不可避免的杂质。
3.权利要求1所述的使用锡焊膏进行的基板与焊件的接合方法,其中,上述锡焊膏是Pb-Sn合金锡焊膏,该Pb-Sn合金锡焊膏是在Pb-Sn锡焊合金粉末中混入助焊剂而得到的,其中,所述Pb-Sn锡焊合金粉末含有35~60%(质量)的Pb,余量为Sn和不可避免的杂质。
4.权利要求1所述的使用锡焊膏进行的基板与焊件的接合方法,其中,上述锡焊膏是Pb-Sn合金锡焊膏,该Pb-Sn合金锡焊膏是在Pb-Sn锡焊合金粉末中混入助焊剂而得到的,其中,所述Pb-Sn锡焊合金粉末含有90~95%(质量)的Pb,余量为Sn和不可避免的杂质。
5.权利要求1所述的使用锡焊膏进行的基板与焊件的接合方法,其中,上述锡焊膏是无Pb锡焊膏,该无Pb锡焊膏是在无Pb锡焊合金粉末中混入助焊剂而得到的,其中,所述无Pb锡焊合金粉末含有40~100%(质量)的Sn,余量为选自Ag、Au、Cu、Bi、Sb、In和Zn的1种或2种以上金属和不可避免的杂质。
6.权利要求1所述的使用锡焊膏进行的基板与焊件的接合方法,其中,上述焊件是元件。
7.权利要求1所述的使用锡焊膏进行的基板与焊件的接合方法,其中,在上述基板上形成的上述金属化镀层是电极膜。
8.权利要求1所述的使用锡焊膏进行的基板与焊件的接合方法,其中,在上述基板的表面上形成的上述金属化镀层形成平面形状,该平面形状具有自上述金属化镀层本体部分的边的中央部垂直突出的至少2个锡焊引导部,互相相邻的锡焊引导部的长度方向彼此所形成的角度与上述焊件的对角线彼此所形成的任何一个交叉角都相同。
9.在基板的表面上形成的金属化镀层,其特征在于:该金属化镀层具有平面形状,该平面形状包含金属化镀层本体部分和自上述金属化镀层本体部分的边的中央部垂直突出的锡焊引导部,
上述锡焊引导部为一定幅度,且
上述锡焊引导部的宽度为上述金属化镀层本体部分的一边的长度的5~50%,且
上述锡焊引导部的长度为上述金属化镀层本体部分的上述一边的长度的20~70%,
在上述金属化镀层本体部分之上搭载锡焊膏。
10.权利要求9所述的在基板的表面上形成的金属化镀层,其特征在于:在上述基板上形成的上述金属化镀层是电极膜。
11.基板,其特征在于:该基板上形成了金属化镀层,上述金属化镀层具有平面形状,该平面形状包含金属化镀层本体部分和自上述金属化镀层本体部分的边的中央部垂直突出的锡焊引导部,
上述锡焊引导部为一定幅度,且
上述锡焊引导部的宽度为上述金属化镀层本体部分的一边的长度的5~50%,且
上述锡焊引导部的长度为上述金属化镀层本体部分的上述一边的长度的20~70%,
在上述金属化镀层本体部分之上搭载锡焊膏。
12.权利要求11所述的基板,其特征在于:在上述基板上形成的上述金属化镀层是电极膜。
13.焊件与基板的接合体,其特征在于:该接合体是通过权利要求1所述的接合方法接合而成的。
14.焊件与基板的接合体的制备方法,其特征在于:该方法采用权利要求1所述的接合方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310063158.9A CN103208435B (zh) | 2008-06-12 | 2009-06-12 | 使用锡焊膏进行的基板与焊件的接合方法 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-154003 | 2008-06-12 | ||
JP2008154003A JP2009302229A (ja) | 2008-06-12 | 2008-06-12 | 位置合わせ性に優れたはんだペーストを用いた基板と被搭載物の接合方法 |
JP2008-221633 | 2008-08-29 | ||
JP2008221633A JP2010056399A (ja) | 2008-08-29 | 2008-08-29 | 位置合わせ性に優れたはんだペーストを用いた基板と被搭載物の接合方法 |
PCT/JP2009/060785 WO2009151123A1 (ja) | 2008-06-12 | 2009-06-12 | はんだペーストを用いた基板と被搭載物の接合方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310063158.9A Division CN103208435B (zh) | 2008-06-12 | 2009-06-12 | 使用锡焊膏进行的基板与焊件的接合方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102047397A CN102047397A (zh) | 2011-05-04 |
CN102047397B true CN102047397B (zh) | 2013-10-16 |
Family
ID=41416825
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310063158.9A Expired - Fee Related CN103208435B (zh) | 2008-06-12 | 2009-06-12 | 使用锡焊膏进行的基板与焊件的接合方法 |
CN2009801204361A Expired - Fee Related CN102047397B (zh) | 2008-06-12 | 2009-06-12 | 使用锡焊膏进行的基板与焊件的接合方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310063158.9A Expired - Fee Related CN103208435B (zh) | 2008-06-12 | 2009-06-12 | 使用锡焊膏进行的基板与焊件的接合方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20110067911A1 (zh) |
EP (1) | EP2290676A4 (zh) |
KR (1) | KR101565184B1 (zh) |
CN (2) | CN103208435B (zh) |
TW (1) | TWI536466B (zh) |
WO (1) | WO2009151123A1 (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9899329B2 (en) | 2010-11-23 | 2018-02-20 | X-Celeprint Limited | Interconnection structures and methods for transfer-printed integrated circuit elements with improved interconnection alignment tolerance |
JP2012119637A (ja) | 2010-12-03 | 2012-06-21 | Sumitomo Electric Device Innovations Inc | 光半導体装置の製造方法 |
US8934259B2 (en) | 2011-06-08 | 2015-01-13 | Semprius, Inc. | Substrates with transferable chiplets |
KR20140041975A (ko) | 2012-09-25 | 2014-04-07 | 삼성전자주식회사 | 범프 구조체 및 이를 포함하는 전기적 연결 구조체 |
JP6007358B2 (ja) | 2014-02-27 | 2016-10-12 | 日信工業株式会社 | 回路基板および車両用ブレーキ液圧制御装置 |
JP6390700B2 (ja) * | 2014-04-02 | 2018-09-19 | 千住金属工業株式会社 | Led用はんだ合金およびledモジュール |
US9799719B2 (en) | 2014-09-25 | 2017-10-24 | X-Celeprint Limited | Active-matrix touchscreen |
US20160093600A1 (en) * | 2014-09-25 | 2016-03-31 | X-Celeprint Limited | Compound micro-assembly strategies and devices |
CN107113963B (zh) * | 2014-12-19 | 2020-07-24 | 麦伦·沃克 | 用以改善集成电路封装的自我对位及焊接性的辐条式焊垫 |
USD816135S1 (en) | 2014-12-19 | 2018-04-24 | Myron Walker | Spoked solder pad |
KR102103628B1 (ko) * | 2014-12-19 | 2020-04-23 | 마이론 워커 | 집적 회로 패키지들의 납땜성 및 자기-정렬을 개선하기 위한 스포크드 땜납 패드 |
WO2017144573A1 (en) | 2016-02-25 | 2017-08-31 | X-Celeprint Limited | Efficiently micro-transfer printing micro-scale devices onto large-format substrates |
JP6842246B2 (ja) * | 2016-05-26 | 2021-03-17 | ローム株式会社 | Ledモジュール |
CN107623012B (zh) * | 2016-07-13 | 2020-04-28 | 群创光电股份有限公司 | 显示装置及其形成方法 |
US20180019234A1 (en) * | 2016-07-13 | 2018-01-18 | Innolux Corporation | Display devices and methods for forming the same |
JP6519549B2 (ja) | 2016-08-02 | 2019-05-29 | 日亜化学工業株式会社 | 発光装置 |
US10600671B2 (en) | 2016-11-15 | 2020-03-24 | X-Celeprint Limited | Micro-transfer-printable flip-chip structures and methods |
WO2018091459A1 (en) | 2016-11-15 | 2018-05-24 | X-Celeprint Limited | Micro-transfer-printable flip-chip structures and methods |
US10395966B2 (en) | 2016-11-15 | 2019-08-27 | X-Celeprint Limited | Micro-transfer-printable flip-chip structures and methods |
US11024608B2 (en) | 2017-03-28 | 2021-06-01 | X Display Company Technology Limited | Structures and methods for electrical connection of micro-devices and substrates |
CN108521722A (zh) * | 2018-07-12 | 2018-09-11 | 贵州贵安新区众鑫捷创科技有限公司 | 一种smt贴片工艺 |
JP7166818B2 (ja) * | 2018-07-13 | 2022-11-08 | スタンレー電気株式会社 | 光半導体素子 |
US11557878B2 (en) * | 2019-10-22 | 2023-01-17 | University Of Maryland, College Park | High power, narrow linewidth semiconductor laser system and method of fabrication |
DE102019131950A1 (de) * | 2019-11-26 | 2021-05-27 | Landulf Martin Skoda | Lötpad und Verfahren zum Löten |
DE102021202178A1 (de) | 2021-03-05 | 2022-09-08 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verbindungsanordnung |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005052869A (ja) * | 2003-08-06 | 2005-03-03 | Sumitomo Metal Mining Co Ltd | 高温はんだ付用ろう材とそれを用いた半導体装置 |
JP2007061857A (ja) * | 2005-08-31 | 2007-03-15 | Mitsubishi Materials Corp | Au−Sn合金はんだペーストを用いた基板と素子の接合方法 |
US7242033B2 (en) * | 2002-03-08 | 2007-07-10 | Rohm Co., Ltd. | Semiconductor device using LED chip |
JP2008118071A (ja) * | 2006-11-08 | 2008-05-22 | Nichia Chem Ind Ltd | 実装用部品、および半導体装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5149550B2 (zh) * | 1972-09-14 | 1976-12-27 | ||
JPH06326141A (ja) * | 1993-05-17 | 1994-11-25 | Mitsubishi Electric Corp | 半導体チップ接合用基材および半導体チップ接合用半田材および半導体チップ接合用半田材の製造方法 |
JPH09107173A (ja) * | 1995-10-11 | 1997-04-22 | Tokai Rika Co Ltd | パッド構造及び配線基板装置 |
KR100703830B1 (ko) * | 1996-12-26 | 2007-04-05 | 가부시키가이샤 히타치세이사쿠쇼 | 수지밀봉형 반도체장치의 제조방법 |
CN1122304C (zh) * | 1997-02-10 | 2003-09-24 | 松下电器产业株式会社 | 树脂封装型半导体装置的制造方法 |
US6115262A (en) * | 1998-06-08 | 2000-09-05 | Ford Motor Company | Enhanced mounting pads for printed circuit boards |
US6316736B1 (en) * | 1998-06-08 | 2001-11-13 | Visteon Global Technologies, Inc. | Anti-bridging solder ball collection zones |
TW516346B (en) * | 1999-04-06 | 2003-01-01 | Eighttech Tectron Co Ltd | Device for heating printed-circuit board |
JP3924481B2 (ja) * | 2002-03-08 | 2007-06-06 | ローム株式会社 | 半導体チップを使用した半導体装置 |
US20050056458A1 (en) * | 2003-07-02 | 2005-03-17 | Tsuyoshi Sugiura | Mounting pad, package, device, and method of fabricating the device |
CN100481535C (zh) * | 2004-03-24 | 2009-04-22 | 日立电线精密株式会社 | 发光器件的制造方法和发光器件 |
JP4560830B2 (ja) * | 2004-06-28 | 2010-10-13 | 三菱マテリアル株式会社 | はんだペースト用Au−Sn合金粉末 |
JP4777692B2 (ja) | 2005-06-06 | 2011-09-21 | ローム株式会社 | 半導体装置 |
WO2006132130A1 (ja) * | 2005-06-06 | 2006-12-14 | Rohm Co., Ltd. | 半導体装置、基板および半導体装置の製造方法 |
JP4826735B2 (ja) * | 2005-11-21 | 2011-11-30 | 三菱マテリアル株式会社 | 大きなボイドを内蔵することのないAu−Sn合金バンプの製造方法 |
JP4924920B2 (ja) * | 2006-06-28 | 2012-04-25 | 三菱マテリアル株式会社 | Au−Sn合金はんだペーストを用いて素子の接合面全面を基板に接合する方法 |
JP4326561B2 (ja) | 2006-12-18 | 2009-09-09 | 株式会社エヌ・ティ・ティ・ドコモ | 移動通信端末及び送信電力制御方法 |
JP2008221633A (ja) | 2007-03-13 | 2008-09-25 | Toyo Mach & Metal Co Ltd | 射出成形機 |
JP4962217B2 (ja) * | 2007-08-28 | 2012-06-27 | 富士通株式会社 | プリント配線基板及び電子装置製造方法 |
-
2009
- 2009-06-12 CN CN201310063158.9A patent/CN103208435B/zh not_active Expired - Fee Related
- 2009-06-12 EP EP09762553A patent/EP2290676A4/en not_active Ceased
- 2009-06-12 WO PCT/JP2009/060785 patent/WO2009151123A1/ja active Application Filing
- 2009-06-12 TW TW098119752A patent/TWI536466B/zh not_active IP Right Cessation
- 2009-06-12 KR KR1020107022971A patent/KR101565184B1/ko active IP Right Grant
- 2009-06-12 CN CN2009801204361A patent/CN102047397B/zh not_active Expired - Fee Related
- 2009-06-12 US US12/736,986 patent/US20110067911A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7242033B2 (en) * | 2002-03-08 | 2007-07-10 | Rohm Co., Ltd. | Semiconductor device using LED chip |
JP2005052869A (ja) * | 2003-08-06 | 2005-03-03 | Sumitomo Metal Mining Co Ltd | 高温はんだ付用ろう材とそれを用いた半導体装置 |
JP2007061857A (ja) * | 2005-08-31 | 2007-03-15 | Mitsubishi Materials Corp | Au−Sn合金はんだペーストを用いた基板と素子の接合方法 |
JP2008118071A (ja) * | 2006-11-08 | 2008-05-22 | Nichia Chem Ind Ltd | 実装用部品、および半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201019405A (en) | 2010-05-16 |
CN103208435A (zh) | 2013-07-17 |
CN102047397A (zh) | 2011-05-04 |
US20110067911A1 (en) | 2011-03-24 |
EP2290676A4 (en) | 2012-01-11 |
TWI536466B (zh) | 2016-06-01 |
EP2290676A1 (en) | 2011-03-02 |
CN103208435B (zh) | 2016-01-20 |
KR101565184B1 (ko) | 2015-11-02 |
KR20110035996A (ko) | 2011-04-06 |
WO2009151123A1 (ja) | 2009-12-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102047397B (zh) | 使用锡焊膏进行的基板与焊件的接合方法 | |
EP2052805B1 (en) | Bonding material, bonded portion and circuit board | |
EP1952934B1 (en) | Soldering paste and solder joints | |
US7201304B2 (en) | Multi-functional solder and articles made therewith, such as microelectronic components | |
US9017446B2 (en) | Mixed alloy solder paste | |
US5573602A (en) | Solder paste | |
KR100253527B1 (ko) | 납땜 공정 | |
CN100501955C (zh) | 焊料组成物和使用该焊料组成物的隆起形成方法 | |
WO2016178000A1 (en) | Lead-free solder alloy with low melting point | |
KR20090038887A (ko) | 크림 땜납 및 전자 부품의 납땜 방법 | |
US9636784B2 (en) | Mixed alloy solder paste | |
TW202031908A (zh) | 無鉛焊料組成物 | |
KR20140050728A (ko) | 무연 솔더 조성물 | |
CN107335879B (zh) | 一种面阵列的封装方法 | |
JP5849421B2 (ja) | 半田及び半田を用いた半導体装置並びに半田付け方法 | |
JP2023153935A (ja) | はんだペースト | |
JP2010056399A (ja) | 位置合わせ性に優れたはんだペーストを用いた基板と被搭載物の接合方法 | |
KR101733023B1 (ko) | 경화제, 그 경화제를 포함하는 열경화성 수지 조성물, 그것을 사용한 접합 방법, 및 열경화성 수지의 경화 온도의 제어 방법 | |
CN213340422U (zh) | 易于焊接的倒装Mini/Micro-LED芯片 | |
WO2021241635A1 (ja) | 熱電変換モジュール及びその製造方法 | |
CN105834611B (zh) | 一种适用于电子封装的高电导高可靠性Ce‑Sn‑Ag‑Cu焊料 | |
JP7333056B2 (ja) | 接合用組成物、接合体及びその製造方法 | |
JPH02217193A (ja) | インジウム系粉末状ハンダ | |
JP7333055B2 (ja) | 接合用組成物、接合体及びその製造方法 | |
JP2021175578A (ja) | 成形はんだ及び成形はんだの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131016 Termination date: 20190612 |