CN101971353B - 光电装置和制造光电装置的方法 - Google Patents

光电装置和制造光电装置的方法 Download PDF

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CN101971353B
CN101971353B CN2009801085697A CN200980108569A CN101971353B CN 101971353 B CN101971353 B CN 101971353B CN 2009801085697 A CN2009801085697 A CN 2009801085697A CN 200980108569 A CN200980108569 A CN 200980108569A CN 101971353 B CN101971353 B CN 101971353B
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carrier
insulating material
electrically insulating
optoelectronic device
optoelectronic
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CN101971353A (zh
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哈拉尔德·耶格尔
迈克尔·资特兹尔斯伯尔格尔
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
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    • H10H20/01—Manufacture or treatment
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    • H10H20/80—Constructional details
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    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Manufacturing & Machinery (AREA)
CN2009801085697A 2008-04-17 2009-03-31 光电装置和制造光电装置的方法 Active CN101971353B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008019269 2008-04-17
DE102008019269.4 2008-04-17
DE102008024704A DE102008024704A1 (de) 2008-04-17 2008-05-21 Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils
DE102008024704.9 2008-05-21
PCT/DE2009/000438 WO2009143789A1 (de) 2008-04-17 2009-03-31 Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils

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CN101971353A CN101971353A (zh) 2011-02-09
CN101971353B true CN101971353B (zh) 2012-07-18

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US (1) US9698282B2 (enExample)
EP (1) EP2266139B1 (enExample)
JP (1) JP5490096B2 (enExample)
KR (1) KR101620113B1 (enExample)
CN (1) CN101971353B (enExample)
DE (1) DE102008024704A1 (enExample)
WO (1) WO2009143789A1 (enExample)

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TWI570856B (zh) * 2014-11-10 2017-02-11 恆勁科技股份有限公司 封裝結構及其製法
JP5900586B2 (ja) * 2014-12-08 2016-04-06 日亜化学工業株式会社 発光装置
DE102015105509A1 (de) * 2015-04-10 2016-10-13 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102015107515A1 (de) 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Verfahren zum Bearbeiten eines Leiterrahmens und Leiterrahmen
DE102015107742A1 (de) * 2015-05-18 2016-11-24 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauteils und optoelektronisches Bauteil
DE102015109953A1 (de) * 2015-06-22 2016-12-22 Osram Opto Semiconductors Gmbh Herstellung elektronischer Bauelemente
DE102015114292A1 (de) * 2015-08-27 2017-03-02 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zu seiner Herstellung
DE102015114579B4 (de) * 2015-09-01 2021-07-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
DE102016114478A1 (de) * 2016-08-04 2018-02-08 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines trägers für ein optoelektronisches bauelement
JP2016225655A (ja) * 2016-09-21 2016-12-28 大日本印刷株式会社 光半導体装置用リードフレーム、樹脂付き光半導体装置用リードフレーム、リードフレームの多面付け体、樹脂付きリードフレームの多面付け体、光半導体装置、光半導体装置の多面付け体
JP2017076809A (ja) * 2016-12-05 2017-04-20 大日本印刷株式会社 樹脂付リードフレーム、半導体装置、照明装置
JP7043225B2 (ja) * 2017-11-08 2022-03-29 株式会社東芝 半導体装置
JP7116303B2 (ja) 2018-06-25 2022-08-10 日亜化学工業株式会社 パッケージ及び発光装置
JP7185020B2 (ja) * 2018-08-24 2022-12-06 ▲寧▼波舜宇光▲電▼信息有限公司 回路基板アセンブリおよびその半製品、投光器、撮像モジュールおよびそれらの使用
JP7227474B2 (ja) * 2019-02-26 2023-02-22 日亜化学工業株式会社 樹脂パッケージ及び発光装置
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CN111834329B (zh) * 2020-06-30 2021-12-24 江苏长电科技股份有限公司 一种半导体封装结构及其制造方法

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JP5490096B2 (ja) 2014-05-14
US9698282B2 (en) 2017-07-04
KR20100136971A (ko) 2010-12-29
DE102008024704A1 (de) 2009-10-29
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WO2009143789A1 (de) 2009-12-03
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