KR101620113B1 - 광전 소자 및 광전 소자 제조 방법 - Google Patents

광전 소자 및 광전 소자 제조 방법 Download PDF

Info

Publication number
KR101620113B1
KR101620113B1 KR1020107019998A KR20107019998A KR101620113B1 KR 101620113 B1 KR101620113 B1 KR 101620113B1 KR 1020107019998 A KR1020107019998 A KR 1020107019998A KR 20107019998 A KR20107019998 A KR 20107019998A KR 101620113 B1 KR101620113 B1 KR 101620113B1
Authority
KR
South Korea
Prior art keywords
carrier
carrier strip
electrically insulating
insulating material
strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020107019998A
Other languages
English (en)
Korean (ko)
Other versions
KR20100136971A (ko
Inventor
하랄드 제이거
마이클 지트즐스퍼거
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=41111908&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR101620113(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20100136971A publication Critical patent/KR20100136971A/ko
Application granted granted Critical
Publication of KR101620113B1 publication Critical patent/KR101620113B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Manufacturing & Machinery (AREA)
KR1020107019998A 2008-04-17 2009-03-31 광전 소자 및 광전 소자 제조 방법 Active KR101620113B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008019269.4 2008-04-17
DE102008019269 2008-04-17
DE102008024704A DE102008024704A1 (de) 2008-04-17 2008-05-21 Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils
DE102008024704.9 2008-05-21

Publications (2)

Publication Number Publication Date
KR20100136971A KR20100136971A (ko) 2010-12-29
KR101620113B1 true KR101620113B1 (ko) 2016-05-12

Family

ID=41111908

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107019998A Active KR101620113B1 (ko) 2008-04-17 2009-03-31 광전 소자 및 광전 소자 제조 방법

Country Status (7)

Country Link
US (1) US9698282B2 (enExample)
EP (1) EP2266139B1 (enExample)
JP (1) JP5490096B2 (enExample)
KR (1) KR101620113B1 (enExample)
CN (1) CN101971353B (enExample)
DE (1) DE102008024704A1 (enExample)
WO (1) WO2009143789A1 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2792128B2 (ja) * 1989-08-02 1998-08-27 株式会社豊田自動織機製作所 ジェットルームにおける緯入れ制御方法
US8194164B2 (en) * 2009-09-30 2012-06-05 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
JP4747265B2 (ja) * 2009-11-12 2011-08-17 電気化学工業株式会社 発光素子搭載用基板およびその製造方法
US8319247B2 (en) * 2010-03-25 2012-11-27 Koninklijke Philips Electronics N.V. Carrier for a light emitting device
DE102010023815A1 (de) * 2010-06-15 2011-12-15 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelements
JP2012028744A (ja) * 2010-06-22 2012-02-09 Panasonic Corp 半導体装置用パッケージおよびその製造方法ならびに半導体装置
WO2012036281A1 (ja) 2010-09-17 2012-03-22 ローム株式会社 半導体発光装置、その製造方法、および表示装置
KR101825473B1 (ko) * 2011-02-16 2018-02-05 삼성전자 주식회사 발광소자 패키지 및 그 제조방법
JP5766976B2 (ja) * 2011-02-28 2015-08-19 日亜化学工業株式会社 発光装置の製造方法
WO2012117974A1 (ja) 2011-02-28 2012-09-07 日亜化学工業株式会社 発光装置
CN102299247A (zh) * 2011-05-20 2011-12-28 浙江英特来光电科技有限公司 一种全户外led模组
JP5795251B2 (ja) * 2011-12-14 2015-10-14 信越化学工業株式会社 光学半導体装置用基台及びその製造方法、並びに光学半導体装置
DE102012101889A1 (de) 2012-03-06 2013-09-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
TW201344971A (zh) * 2012-04-18 2013-11-01 隆達電子股份有限公司 發光元件之封裝結構
JP5998716B2 (ja) * 2012-07-31 2016-09-28 日亜化学工業株式会社 発光装置
DE102012109905B4 (de) * 2012-10-17 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterbauteilen
US9726357B2 (en) 2013-02-06 2017-08-08 Sharp Kabushiki Kaisha Light-emitting device
DE102014102810A1 (de) * 2014-03-04 2015-09-10 Osram Opto Semiconductors Gmbh Herstellung optoelektronischer Bauelemente
DE102014114520B4 (de) * 2014-10-07 2020-03-05 Infineon Technologies Austria Ag Ein elektronisches Modul mit mehreren Einkapselungsschichten und ein Verfahren zu dessen Herstellung
TWI570856B (zh) * 2014-11-10 2017-02-11 恆勁科技股份有限公司 封裝結構及其製法
DE102014116370A1 (de) 2014-11-10 2016-05-12 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Trägers und Verfahren zum Herstellen eines optoelektronischen Bauelements
JP5900586B2 (ja) * 2014-12-08 2016-04-06 日亜化学工業株式会社 発光装置
DE102015105509A1 (de) 2015-04-10 2016-10-13 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102015107515A1 (de) * 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Verfahren zum Bearbeiten eines Leiterrahmens und Leiterrahmen
DE102015107742A1 (de) * 2015-05-18 2016-11-24 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauteils und optoelektronisches Bauteil
DE102015109953A1 (de) * 2015-06-22 2016-12-22 Osram Opto Semiconductors Gmbh Herstellung elektronischer Bauelemente
DE102015114292A1 (de) * 2015-08-27 2017-03-02 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zu seiner Herstellung
DE102015114579B4 (de) * 2015-09-01 2021-07-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
DE102016114478A1 (de) * 2016-08-04 2018-02-08 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines trägers für ein optoelektronisches bauelement
JP2016225655A (ja) * 2016-09-21 2016-12-28 大日本印刷株式会社 光半導体装置用リードフレーム、樹脂付き光半導体装置用リードフレーム、リードフレームの多面付け体、樹脂付きリードフレームの多面付け体、光半導体装置、光半導体装置の多面付け体
JP2017076809A (ja) * 2016-12-05 2017-04-20 大日本印刷株式会社 樹脂付リードフレーム、半導体装置、照明装置
JP7043225B2 (ja) * 2017-11-08 2022-03-29 株式会社東芝 半導体装置
JP7116303B2 (ja) 2018-06-25 2022-08-10 日亜化学工業株式会社 パッケージ及び発光装置
WO2020038179A1 (zh) * 2018-08-24 2020-02-27 宁波舜宇光电信息有限公司 电路板组件及其半成品、泛光灯、摄像模组及其应用
JP7227474B2 (ja) * 2019-02-26 2023-02-22 日亜化学工業株式会社 樹脂パッケージ及び発光装置
DE102019121449A1 (de) 2019-08-08 2021-02-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur vereinzelung von bauteilen aus einem bauteilverbund sowie bauteil
CN111834329B (zh) * 2020-06-30 2021-12-24 江苏长电科技股份有限公司 一种半导体封装结构及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050017330A1 (en) * 2003-04-29 2005-01-27 Stmicroelectronics S.A. Process for fabricating a semiconductor package and semiconductor package with leadframe
CN1705091A (zh) * 2004-05-31 2005-12-07 相互股份有限公司 Ic封装制程
US20070029570A1 (en) * 2005-08-04 2007-02-08 Samsung Electronics Co., Ltd. LED package and method for fabricating the same

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6164145A (ja) * 1984-09-05 1986-04-02 Mitsubishi Electric Corp 樹脂封止形半導体装置
US6667541B1 (en) 1998-10-21 2003-12-23 Matsushita Electric Industrial Co., Ltd. Terminal land frame and method for manufacturing the same
EP1122778A3 (en) * 2000-01-31 2004-04-07 Sanyo Electric Co., Ltd. Circuit device and manufacturing method of circuit device
TW473951B (en) * 2001-01-17 2002-01-21 Siliconware Precision Industries Co Ltd Non-leaded quad flat image sensor package
JP4211359B2 (ja) * 2002-03-06 2009-01-21 日亜化学工業株式会社 半導体装置の製造方法
KR100989007B1 (ko) 2002-04-11 2010-10-20 엔엑스피 비 브이 반도체 디바이스
US7102209B1 (en) * 2003-08-27 2006-09-05 National Semiconductor Corporation Substrate for use in semiconductor manufacturing and method of making same
WO2005045903A2 (en) * 2003-10-28 2005-05-19 Dow Corning Corporation Method for making a flat-top pad
TWI275189B (en) 2003-12-30 2007-03-01 Osram Opto Semiconductors Gmbh Radiation-emitting and/or radiation-receiving semiconductor component and method for producing such component
DE10361801A1 (de) 2003-12-30 2005-08-04 Osram Opto Semiconductors Gmbh Strahlungsemittierendes und/oder strahlungsempfangendes Halbleiterbauelement und Verfahren zu dessen Herstellung
JP4516320B2 (ja) 2004-01-08 2010-08-04 シチズン電子株式会社 Ｌｅｄ基板
US20050280016A1 (en) * 2004-06-17 2005-12-22 Mok Thye L PCB-based surface mount LED device with silicone-based encapsulation structure
JP4486451B2 (ja) 2004-09-07 2010-06-23 スタンレー電気株式会社 発光装置、その発光装置に使用するリードフレーム、及びリードフレームの製造方法
US7348663B1 (en) * 2005-07-15 2008-03-25 Asat Ltd. Integrated circuit package and method for fabricating same
JP2007157940A (ja) * 2005-12-02 2007-06-21 Nichia Chem Ind Ltd 発光装置および発光装置の製造方法
TWI294674B (en) * 2005-12-06 2008-03-11 Subtron Technology Co Ltd High thermal conducting circuit substrate and manufacturing process thereof
JP4890872B2 (ja) 2006-01-30 2012-03-07 ルネサスエレクトロニクス株式会社 光半導体封止用透明エポキシ樹脂組成物及びそれを用いた光半導体集積回路装置
KR100735325B1 (ko) * 2006-04-17 2007-07-04 삼성전기주식회사 발광다이오드 패키지 및 그 제조방법
JP4821854B2 (ja) 2006-06-14 2011-11-24 パナソニック株式会社 放熱配線基板
KR20100022969A (ko) * 2007-05-08 2010-03-03 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치 및 조명 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050017330A1 (en) * 2003-04-29 2005-01-27 Stmicroelectronics S.A. Process for fabricating a semiconductor package and semiconductor package with leadframe
CN1705091A (zh) * 2004-05-31 2005-12-07 相互股份有限公司 Ic封装制程
US20070029570A1 (en) * 2005-08-04 2007-02-08 Samsung Electronics Co., Ltd. LED package and method for fabricating the same

Also Published As

Publication number Publication date
KR20100136971A (ko) 2010-12-29
EP2266139B1 (de) 2017-08-23
JP2011517125A (ja) 2011-05-26
EP2266139A1 (de) 2010-12-29
US9698282B2 (en) 2017-07-04
WO2009143789A1 (de) 2009-12-03
CN101971353A (zh) 2011-02-09
DE102008024704A1 (de) 2009-10-29
US20110074000A1 (en) 2011-03-31
CN101971353B (zh) 2012-07-18
JP5490096B2 (ja) 2014-05-14

Similar Documents

Publication Publication Date Title
KR101620113B1 (ko) 광전 소자 및 광전 소자 제조 방법
KR101843402B1 (ko) 표면 장착 가능한 광전자 소자 그리고 표면 장착 가능한 광전자 소자를 제조하기 위한 방법
JP6161709B2 (ja) 複数のオプトエレクトロニクス半導体素子を製造するための方法
CN101681964B (zh) 用于制造光电子器件的方法以及光电子器件
CN106663659B (zh) 可表面安装的半导体器件及其制造方法
US7888697B2 (en) Lead frame, method of making the same and light receiving/emitting device
JP6099764B2 (ja) オプトエレクトロニクス半導体部品を製造する方法およびオプトエレクトロニクス半導体部品
EP2485284B1 (en) Light emitting device
WO2002091489A2 (en) Surface mount light emitting device package and fabrication method
JPH11195794A (ja) 光電素子および該光電素子の製造方法
JP2011176356A (ja) 発光ダイパッケージ用の光学レンズ
KR20130119907A (ko) 소자 그리고 소자를 제조하기 위한 방법
JP4545956B2 (ja) 半導体装置、およびその製造方法
KR20150135299A (ko) 반도체 부품 그리고 반도체 부품을 제조하는 방법
TW201031015A (en) Light emitting diode package and fabrication method thereof
CN116210095A (zh) 光电子半导体器件和制造方法
CN108231608B (zh) 半导体封装体和用于制造半导体封装体的方法
US20100230710A1 (en) Light emitting device package
US20110297999A1 (en) Optoelectronic Semiconductor Component
WO2011129518A1 (en) Light emitting diode package and method for fabricating the same
US20140131739A1 (en) Method for producing an optoelectronic semiconductor component
KR101526087B1 (ko) 광전 소자용 하우징 및 그 하우징의 제조 방법
TW201448286A (zh) 發光二極體封裝結構及其製造方法
JP4367299B2 (ja) 発光素子デバイス及び発光素子デバイスの製造方法
CN105529392B (zh) 半导体器件和用于制造半导体器件的方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20100907

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20140324

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20150127

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20150729

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20160228

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20160503

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20160503

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20190425

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20190425

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20200423

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20210422

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20220421

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20230420

Start annual number: 8

End annual number: 8