JP5490096B2 - オプトエレクトロニクス部品およびオプトエレクトロニクス部品の製造方法 - Google Patents
オプトエレクトロニクス部品およびオプトエレクトロニクス部品の製造方法 Download PDFInfo
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- JP5490096B2 JP5490096B2 JP2011504309A JP2011504309A JP5490096B2 JP 5490096 B2 JP5490096 B2 JP 5490096B2 JP 2011504309 A JP2011504309 A JP 2011504309A JP 2011504309 A JP2011504309 A JP 2011504309A JP 5490096 B2 JP5490096 B2 JP 5490096B2
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- 230000005693 optoelectronics Effects 0.000 title claims description 101
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000012777 electrically insulating material Substances 0.000 claims description 78
- 238000004382 potting Methods 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- 229920001296 polysiloxane Polymers 0.000 claims description 18
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 239000002318 adhesion promoter Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 8
- 239000000945 filler Substances 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- QUQFTIVBFKLPCL-UHFFFAOYSA-L copper;2-amino-3-[(2-amino-2-carboxylatoethyl)disulfanyl]propanoate Chemical compound [Cu+2].[O-]C(=O)C(N)CSSCC(N)C([O-])=O QUQFTIVBFKLPCL-UHFFFAOYSA-L 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004944 Liquid Silicone Rubber Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Description
− キャリア片を形成するステップと、
− キャリア片をエッチング法によって構造化するステップと、
− キャリア片の相互間空間を、スクリーン印刷法を使用して電気絶縁材料によって満たして接続キャリアを形成するステップと、
− キャリア片に複数のオプトエレクトロニクス半導体チップを貼り付けるステップと、
を含んでいる。
Claims (13)
- オプトエレクトロニクス部品であって、
− 構造化されているキャリア片(1)を備えている接続キャリア(10)であって、相互間空間(2)が電気絶縁材料(3)によって満たされている、前記接続キャリア(10)と、
− 前記接続キャリアの上面(10a)に取り付けられて電気的に接続されているオプトエレクトロニクス半導体チップ(4)と、
を備えており、
− 前記電気絶縁材料(3)が、部分的に前記キャリア片(1)と同じ高さに整列している、または、前記キャリア片(1)が前記電気絶縁材料(3)よりも突き出しており、
− 前記キャリア片(1)が、前記接続キャリアの前記上面(10a)もしくは下面(10b)またはその両方において、前記電気絶縁材料(3)によって覆われておらず、
− 前記オプトエレクトロニクス半導体チップ(4)がポッティングボディ(8)によって囲まれており、前記ポッティングボディ(8)が、シリコーンを含んでおり、部分的に前記接続キャリア(10)の前記電気絶縁材料(3)に直接隣接しており、
− 前記電気絶縁材料(3)がシリコーンを含んでいる、またはシリコーンから成る、
オプトエレクトロニクス部品。 - 前記ポッティングボディ(8)と前記接続キャリア(10)は、個片化痕跡を有する、
請求項1に記載のオプトエレクトロニクス部品。 - 前記キャリア片(1)が、少なくとも1つのアンカー構造(1a)を備えており、前記アンカー構造(1a)が、前記キャリア片との前記電気絶縁材料(3)の接着性を向上させる、
請求項1または請求項2に記載のオプトエレクトロニクス部品。 - 前記キャリア片(1)が、少なくとも部分的にT字形状の断面を備えている、
請求項1から請求項3のいずれかに記載のオプトエレクトロニクス部品。 - 前記少なくとも1つのアンカー構造(1a)がエッチングによって形成されている、
請求項1から請求項4のいずれかに記載のオプトエレクトロニクス部品。 - 前記少なくとも1つのアンカー構造(1a)が前記キャリア片における開口である、
請求項1から請求項5のいずれかに記載のオプトエレクトロニクス部品。 - 前記電気絶縁材料(3)が、エポキシ樹脂を含んでいる、請求項1から請求項6のいずれかに記載のオプトエレクトロニクス部品。
- 前記電気絶縁材料(3)がフィラー粒子を含んでおり、前記フィラー粒子が、前記接続キャリアの熱膨張係数を低減する、
請求項1から請求項7のいずれかに記載のオプトエレクトロニクス部品。 - 前記電気絶縁材料が接着促進剤を含んでおり、前記接着促進剤が、前記キャリア片(1)との接着性を向上させる、
請求項1から請求項8のいずれかに記載のオプトエレクトロニクス部品。 - 前記キャリア片(1)が、銅を含んでいるメインボディ(6)を備えており、前記メインボディ(6)が部分的に層(7)によって覆われており、前記層(7)が、銀、ニッケル、白金、金、パラジウムのうちの少なくとも1種類の金属を含んでいる、
請求項1から請求項9のいずれかに記載のオプトエレクトロニクス部品。 - 前記接続キャリア(10)に空洞が存在しない、
請求項1から請求項10のいずれかに記載のオプトエレクトロニクス部品。 - 請求項1から請求項11のいずれかに記載のオプトエレクトロニクス部品を製造する方法であって、
キャリア片(1)を形成するステップと、
前記キャリア片(1)をエッチング法(9)によって構造化するステップと、
前記キャリア片(1)の相互間空間(2)を、スクリーン印刷法を用いて電気絶縁材料(3)によって満たして接続キャリア(10)を形成するステップと、
− 前記キャリア片(1)に複数のオプトエレクトロニクス半導体チップ(4)を貼り付けるステップと、
を含んでいる、方法。 - 前記オプトエレクトロニクス半導体チップ(4)がポッティング材料によって包囲されてポッティングボディ(8)が形成されており、
前記接続キャリア(10)と、前記オプトエレクトロニクス半導体チップ(4)と、前記ポッティングボディ(8)とから成る配置構造部が、前記ポッティングボディ(8)を貫くように個片化されてオプトエレクトロニクス部品が製造される、
請求項12に記載の方法。
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DE102008024704A DE102008024704A1 (de) | 2008-04-17 | 2008-05-21 | Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils |
PCT/DE2009/000438 WO2009143789A1 (de) | 2008-04-17 | 2009-03-31 | Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils |
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EP (1) | EP2266139B1 (ja) |
JP (1) | JP5490096B2 (ja) |
KR (1) | KR101620113B1 (ja) |
CN (1) | CN101971353B (ja) |
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CN101971353A (zh) | 2011-02-09 |
US20110074000A1 (en) | 2011-03-31 |
US9698282B2 (en) | 2017-07-04 |
KR20100136971A (ko) | 2010-12-29 |
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