TWI442594B - 發光裝置及發光裝置之製造方法 - Google Patents
發光裝置及發光裝置之製造方法 Download PDFInfo
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- TWI442594B TWI442594B TW095143147A TW95143147A TWI442594B TW I442594 B TWI442594 B TW I442594B TW 095143147 A TW095143147 A TW 095143147A TW 95143147 A TW95143147 A TW 95143147A TW I442594 B TWI442594 B TW I442594B
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- Prior art keywords
- light
- conductive layer
- emitting device
- emitting element
- layer
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- H—ELECTRICITY
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Description
本發明係關於發光裝置及發光裝置之製造方法,詳細而言係關於使用於照明、汽車、工業機器、一般民生機器(顯示器等)之發光裝置,尤其是適用於薄型/小型化的表面安裝型之發光裝置及發光裝置之製造方法。
關於習知的表面安裝型發光裝置,例如有下述的發光裝置,亦即,於玻璃環氧樹脂或陶瓷等絕緣性基板表面形成有圖案之一對導電性構件,將發光元件加以電性連接,並以透光性絕緣構件將發光元件附近加以密封而組成。
此種發光裝置由於製程及零件數較多,因此製造成本較高。此外,由於發光元件所產生的熱係透過由熱傳導率較低的絕緣性材料所組成之基板而散熱至外部,因此無法獲得充分的散熱性。結果為,無法適用於使用高輸出型的發光元件之情形或是被要求連續使用之情形。此外,雖然薄化上述絕緣性基板可縮短散熱路徑,但卻無法確保形成於上面之導電性構件的強度。
如此,難以同時實現發光裝置之散熱性的提升以及薄型/小型化的達成。
另一方面,有人提出不具有上述的基板,並將一對電極固著於用以密封發光元件等之透光性樹脂底面而成之發光裝置(日本特開2001-203396號)。
然而,由於埋入於樹脂之電極的側面係幾乎與埋入方向平行,因此會因安裝於電路基板的製程或是安裝後的使用時所受到之衝擊等,使上述電極容易從樹脂中脫離,而失去發光裝置的整體性。尤其是於發光裝置時,由於用以密封發光元件之絕緣構件必須具有透光性,因此無法藉由含有填充材等而提高機械性強度,此問題的產生機率極高。
此外,並未說明此發光裝置之具體的製造方法。
本發明之目的在於提供一種可靠度極高之薄型/小型化的發光裝置及發光裝置之製造方法。
本發明為一種發光裝置,係具有發光元件;載置有該發光元件或是與上述發光元件電性連接之複數個導電層;及密封上述發光元件並且於底面具有上述導電層之透光性絕緣構件,其特徵為,上述導電層係於側面的一部分具有突起,上述突起之上面側的角部具有圓弧部分。
此外,本發明為一種發光裝置之製造方法,係具有發光元件;載置有該發光元件或是與上述發光元件電性連接之複數個導電層;及密封上述發光元件並且於底面具有上述導電層之透光性絕緣構件之發光裝置之製造方法,其特徵為,係於金屬母型材的上面塗佈光阻,並去除上述光阻的一部分而形成開口部;於上述開口部內使導電粒子附著而形成導電層,並且從開口部內至上述光阻的上面使導電粒子附著,而於導電層之側面的一部分形成突起;於去除上述光阻後,將發光元件載置於上述導電層的上面並加以電性連接,並以透光性絕緣構件加以被覆;從上述導電層的底面及上述透光性絕緣構件的底面,使金屬母型材剝離。
本發明之發光裝置作為載置有發光二極體或半導體雷射等發光元件之發光裝置,可利用於各種指示器、光感測器、顯示器、光耦合器、背光光源及光學印字頭等。
以下參照圖式說明用以實施本發明之最佳形態。惟以下所示之形態係僅用以使本發明的技術思想達成具體化而以例子顯示發光裝置者,本發明之發光裝置並不限定於以下所說明者。此外,本說明書並非將申請專利範圍所示之構件特定為實施形態中所示之構件。實施形態中所記載之構成零件的尺寸、材質、形狀及其相對配置等,在無特定記載下,並未具有用以將本發明的範圍加以限定之旨意,而僅為用於說明之例子。又各個圖式中所示之構件的大小及相對位置等,係有為了更明確的說明而有所誇大。此外,於以下的說明中,具有同一名稱及符號者,係表示為相同或是同質之構件,並適當的省略詳細說明。再者,構成本發明之各項要素,可構成為以同一構件構成複數個要素,並以1個構件兼用複數個要素之態様,或亦可由複數個構件分擔1個構件的功能而加以實現。
如第1(a)圖及第1(b)圖所示,本發明之發光裝置係具有:發光元件1;載置有上述發光元件1並以導線3與上述發光元件1之一邊的電極電性連接之一邊的導電層2a;以導線3與上述發光元件1之另一邊的電極電性連接之另一邊的導電層2b;及用以密封這些元件之透光性絕緣構件4。於透光性絕緣構件4的底面,一邊的導電層2a與另一邊的導電層2b係隔著間隔而配置。一邊的導電層2a與另一邊的導電層2b係各自於側面具有突起2c.2d。
本形態之發光元件1,可為發光二極體或雷射二極體等發光裝置的光源。此外,於本形態之發光裝置中,可載置發光元件1,並且搭載感光元件、以及用以保護這些半導體元件免於受到過電壓的破壞之保護元件(例如齊納二極體或電容器)、或是這些元件的組合。
在此說明LED晶片作為發光元件1之一例。構成LED晶片之半導體發光元件,例如雖可列舉使用ZnSe及GaN等各種半導體的發光元件,但於構成為具有螢光物質之發光裝置時,可列舉能有效率地激勵該螢光物質之可發出短波長的光之氮化物半導體(Inx
Aly
Ga1 - x - y
N,0≦X,0≦Y,X+Y≦1)。可藉由半導體層的材料及其混晶度而選擇各種的發光波長。例如,LED晶片可構成為不僅可發出可見光區域的光,亦可輸出紫外線或紅外線之發光元件。
此外,於本實施形態之發光裝置中,發光元件1雖使用於同一面側具有正負的一對電極者,但是並不限定於此,亦可適用分別於相對向的面具有正及負的電極者。
於本實施形態中所使用之複數個導電層2a、2b,只要為具有與透光性絕緣構件之密接性、散熱性及導通性良好之材料,則並無特別限定,可使用各種材料而構成。
尤其是於薄型/小型化的發光裝置時,係要求與電路基板接合時之較高強度,因此導電層的硬度較理想為450Hv至550Hv。此外,導電層的熱傳導度較理想為採用0.01cal/(S)(cm2
)(℃/cm)以上,更理想為採用0.5cal/(S)(cm2
)(℃/cm)以上之材料。此外,電阻較理想為300 μ Ω.cm以下,更理想為3 μ Ω.cm以下。
用以形成這些導電層所使用之具體性的材料,例如有Cu、Au、Ni、W、Mo、Mn及Ta等高熔點金屬或是由其微粒子所組成之鍍敷層等。
這些高熔點金屬中,相較於其他金屬,Ni係尤其具有拉伸強度高、彈性率高、高溫下的強度亦較高,並且熱膨脹係數相對較小等優良的物理性質。此種高熔點金屬,係適合於作為載置發熱量較多之LED及LD等半導體發光元件之材料。此外,較理想為於導電層的表面設置光澤度為90以上之導電性膜,藉此可構成為兼具有光反射功能之導電層。在此,所謂的光澤度是指根據JIS規格,於60°的角度使發光元件所發出的光線入射時之鏡面反射率為10%時,將折射率為1.567的玻璃面規定為光澤度0,並以日本電色工業株式會社製的VSR300A之微小面色差計進行測定後之值。另一方面,亦可使用ITO或IZO等透明電極材料,而構成為可於全面進行發光之發光裝置。
本實施形態之導電層2a.2b係於側面具有突起2c.2d。藉此可提升導電層2a.2b與透光性絕緣構材4之間的接著性。於電路基板所安裝之發光裝置施加有衝擊時,若僅將較薄的導電層固著於透光性絕緣構件的背面,係無法保持發光裝置的整體性。此外,雖然亦可考慮藉由對導電層的側面進行蝕刻等,使該側面變得粗糙而提升與透光性絕緣構件之密著性,但由於複數個導電層係隔著間隔而配置,因此若從發光元件將相對向之導電層的側面形成為粗糙面,則照射於上述粗糙面之光極有可能會被封閉於間隔部分的絕緣構件中。此外,用以提高透光性絕緣構件的機械性強度之方法,例如有添加氧化鈦、氧化鋯、氧化鋁、及氧化矽等擴散劑,或是燻矽或燻鋁等之增黏劑,或是顏料等之手法,但為了獲得較佳的強度必須含有較多量的添加劑,因而導致透光性的降低。如此,不易同時維持光取出效率並提高密封構件本身的機械性強度。因此,於本發明中,係將與發光裝置之幾乎所有的基本構件接觸(連接)之導電層,形成為對光學特性具有較佳的形狀以及容易密接之形狀,藉此而提升發光裝置全體的整體性。
構成突起2c、2d之材料,可從構成導電層之材料中加以選擇。此外,亦可並不一定須與上述導電層為同一材料。
突起2c、2d的形狀雖並無特別限定,但較理想為角部具有圓弧部分。藉此可抑制從發光元件所照射之光線(例如從突起的上側方所照射之光線)於導電層的側面產生反射,而使該光線被封閉於導電層(突起)的下部之情形。亦即,藉由具有圓弧部分,可使從發光元件所照射之光線,因突起的圓弧部分而容易往光射出面(例如為上)方向反射。
此外,突起的大小(突出長度)並無特別限定,較理想為於導電層的上面側,從導電層往側面方向突出約5 μ m以下。藉此可確實地將導電層一體黏著於透光性絕緣構件的背面。突起的大小亦可並不需為一致,可形成為部分寬幅/窄幅以及部分厚膜/薄膜。突起較理想雖為形成於導電層的周圍全部,但僅於一部分上形成欠缺亦可。突起的位置雖並無特別限定,但較理想為位於導電層的上面側,藉此可減少因相對向的導電層之間隔部分所造成的光損失。此外,突起之上面側的角部,較理想為具有圓弧部分,再者,突起的側面較理想為從上面至底面呈放射線狀垂下。藉此可獲得高光度的發光裝置。在此所謂的上面是指相當於發光裝置的光取出方向之面,此外,將與上述上面相對向之面相稱為底面。
此外,突起2c、2d的厚度,較理想為各個導電層的全部厚度之10%至70%,更理想為30%至60%,尤其理想為40%至60%。此外,一邊的導電層2a之發光裝置內部側的突起2c、以及與一邊的導電層2a相鄰之另一邊的導電層2b之發光裝置內部側的突起2d之間的間隔,就考量到生產性而言,較理想為50 μ m至1mm。此外,就考量到光取出效率而言,較理想為50 μ m至300 μ m,更理想為50 μ m至100 μ m。
此外,如第3圖所示,可於一邊的導電層2a之一端形成具有平坦的底面之凹部,並將發光元件1載置於上述凹部內。一邊的導電層2a之另一端的底面較理想為以位於略為平行於凹部的底面之方式而形成為凸狀。此外,另一邊的導電層2b較理想為具有:於略為同一上面與一邊的導電層2a之一端相對向之一端、以及與一邊的導電層2a之另一端位於略為同一上面之另一端。藉由此構成,可不需以其他構件將導電層的背面加以補強下,提高發光裝置的機械強度。再者,由於具有複數個安裝面的支點,因此可提升安裝精密度。此外,導電層較理想為具有幾乎一致的厚度,藉此更可提升機械強度。
本實施形態之發光裝置,係以保護所載置之發光元件1及導線3等免於受到灰塵、水分與外力等的影響,並達到上述各項構件整體化,並且提升發光元件1的光取出效率為目的,而藉由透光性絕緣構件4將發光裝置加以密封。透光性絕緣構件4的材料,可從環氧樹脂及矽樹脂、尿素樹脂等透光性樹脂、或是玻璃等透光性無機構件中加以選擇。此外,於此種透光性絕緣構件4中,亦可包含有將來自於發光元件之光線的至少一部分加以吸收而發出具有不同波長的光線之螢光物質,而構成為色轉換構件6。此時,較理想為使用具有優良的耐熱性及耐光性,且即使暴露於包含紫外線之短波長的高能量光之下亦不易產生著色劣化之矽樹脂或變性矽樹脂,作為透光性絕緣構件4,藉此可抑制色偏差以及色不均之產生。此外,即使重覆進行焊接等之被覆構件的熱膨脹及熱收縮,亦可抑制用以連接發光元件1及導電層2a、2b之導線3的斷線,以及晶粒接合構件5的剝離等情形之發生。
於本形態中可加以利用之螢光物質係為用以轉換來自於發光元件的光線者,並且其係以轉換為波長較來自於發光元件的光線還長之螢光物質具有較佳效率。於來自於發光元件的光線為能量較高之短波長的可見光時,較理想為使用氧化鋁系螢光體的一種之YAG:Ce螢光體或Ca2
Si5
N8
螢光體。尤其是YAG:Ce螢光體由於可藉由YAG:Ce螢光體的含有量,將來自於LED晶片之藍色系的光線的一部分加以吸收,而發出成為補色之黃色系的光線,因此可於相對簡單的方式下,形成發出白色系的混色光之高輸出發光二極體。
於本實施形態中,發光元件1係晶粒接合於為發光裝置的大致中央部之一邊的導電層2a的上面,上述發光元件1的各個電極係以導線3,各自電性連接於上述一邊的導電層2a及另一邊的導電層2b。
本形態之晶粒接合構件5,為用以固定發光元件1與導電層2a之構件。例如可使用熱硬化性樹脂等習用之晶粒接合構件,具體而言有環氧樹脂、丙烯酸樹脂及醯亞胺樹脂等。此外,為了調整晶粒接合構件5的熱膨脹率,亦可於這些樹脂中含有填充材。藉此可抑制發光元件從導電層2a剝離。此外,於對發光元件1進行晶粒接合並與導電層2a電性連接時、以及需要具有高散熱性時,較理想為使用Ag膏、碳膏、ITO膏或是金屬凸塊等,尤其是於發熱量較多之功率系發光裝置時,由於熔點較高,因此較理想為使用於高溫下組織構造變化較少,且力學特性的降低較小之Au-Sn系共晶焊材。然而,於使用對來自於發光元件1的光線之反射率較高的構件作為晶粒接合構件5時,由於會產生光線被晶粒接合構件5所吸收,或是光線被封閉於發光元件1內部之情形,因此上述晶粒接合構材5對上述發光元件1底面的佔有率,較理想為5%至95%,更理想為20%至70%,尤其理想為20%至50%。藉由此範圍的含有率,可實現提升發光元件1的散熱性及安裝性,並且提高整體的光取出效率。
於本實施形態中,用以連接發光元件1的電極與導電層2a、2b之導線3,係要求具有較佳之與導電層2a、2b的歐姆特性、機械連接性、電傳導性以及熱傳導性。熱傳導度較理想為0.01cal/(s)(cm2
)(℃/cm)以上,更理想為0.5cal/(s)(cm2
)(℃/cm)以上。此外,就考量到作業性等,導線3的直徑較理想為Φ 10 μ m至Φ 45 μ m。具體而言,導線3的材料,例如有使用Au、Cu、Pt、Al等金屬以及這些金屬的合金之導電性導線。此外,於本實施形態中,導線較理想為進行從導電層2a、2b側往發光元件1的電極之接合(BSOB(Bond Stitchen On Ball)),藉此可形成高速.窄間距下之低超迴路,而能實現薄型、小型化的發光裝置。此外,由於導線的應力點為1處,因此可獲得可靠度較高之發光裝置。
於本實施形態之發光裝置中,各項構成構件係全部以金屬母型材作為襯底材而形成。藉此可獲得較薄且精密度較高之發光裝置。
所謂的金屬母型材,為貼合於較薄的導電層之箔,於製造時係將發光裝置的各項構成構件,亦即將導電層、發光元件及透光性絕緣構件,裝設於金屬母型材的上面,以確保發光裝置整體的剛性。此外,於製成發光裝置後,將金屬母型材剝離而去除。此種可加以剝離之金屬母型材的材料,雖並無特別限定,但較理想為使用具有體心立方構造之金屬之Fe、Mo、W及絲狀(filament)構造系不銹鋼等金屬。藉此可容易控制金屬母型材與其上面所層積之導電層之間的剝離強度,而提高發光裝置的生產性。此外,膜厚例如適合為1 μ m至30 μ m。
此金屬母型材更理想為,具有將層積在上面的導電層2a、2b及透光性絕緣構件4加以剝離之剝離層。剝離層可使用金屬中間層。金屬中間層較理想為,於上面圖案化光阻時之蝕刻製程中,具有阻障層的功能之材料。具體而言,金屬中間層可使用Cu、Ti、Ag、Sn、Ni、Zn,或是以這些金屬的任一種為主成分之合金。尤其是於以Ti為主成分之材料中,較理想為包含氫,藉此可具有使金屬中間層本身變得較脆而容易破壞之性質,而具有適當的剝離強度。於以Ti為主成分之材料中,由於具有充分的脆化程度,且可確保於導電層與金屬母型材的剝離時之均勻的剝離強度,此外,就於發光裝置的各項構成構件之裝設製程及運送製程中防止導電層的剝離之觀點來看,較理想為包含0.5mass%至5mass%的氫,此外,於以Zn為主成分之材料中,較理想為包含0.02mass%至2.5mass%的氫。在此,所謂的主成分是指該材料含有50 mass%以上。剝離層的膜厚例如適合為約10 μ m以下。所層積之導電層與上述金屬母型材之間的剝離強度,就於蝕刻製程及運送製程等處理中防止導電層產生部分剝離,並於形成發光裝置的各項構成構件後的剝離製程中防止所形成的導電層附著於金屬母型材而無法剝離之觀點來看,較理想為位於0.01至0.8N/mm的範圍內。
於金屬母型材與金屬中間層之間的界面,較理想為形成有弱接合層。弱接合層較理想為氧濃化層。一般而言氧濃化層較為脆弱。因此可預先將此種氧濃化層部分地形成於金屬母型材與金屬中間層之間的界面,藉此可控制剝離強度。在此,所謂的氧濃化層是指氧含有量較金屬中間層的部分還高者。弱接合層或氧濃化層雖亦可作為金屬母型材與金屬中間層之間的界面層而包含,但亦可以部分地點狀存在之方式而配置。膜厚例如適合為約3 μ m以下。
於如此構成之可剝離的金屬母型材上形成光阻圖案,藉此可形成對應於所希望之導電層的上面形狀之開口部。光阻圖案的側面較理想為對金屬母型材幾乎呈垂直。上述開口部的間距,係配合所希望之發光裝置的導電層的突起之突出長度而調整。
接下來,使導電粒子附著於開口部內的金屬母型材上而形成導電層。在此,關於導電粒子的層積方法,可使用真空蒸鍍、濺鍍、離子鍍覆、電蒸鍍及電沉積等方法。尤其是真空蒸鍍及電蒸鍍,由於其蒸鍍速度較快,因而較為理想。此外,於形成超薄膜的導電層時,可使用濺鍍法及離子鍍覆法等而獲得優質的膜。此外,可於去除光阻圖案的前後,以濺鍍法或濕式蝕刻等種種方法,對所獲得之導電層進行平坦化處理或是加工等。
之後,使導電粒子從開口部內附著整個上述光阻的上面,而形成導電層的突起。此時,藉由調整附著量,可調整導電層2a、2b之突起的形狀(厚度、突出長度等)。
在此之全體導電粒子的附著層之厚度,較理想為光阻圖案厚度的1.3倍至2.5倍,更理想為1.5倍至2.3倍,尤其理想為1.8倍至2.0倍。
如此,於層積導電粒子後,一般係利用使用有光阻剝離液之濕式蝕刻等以去除光阻圖案,藉此可形成導電層2a、2b。
此外,突起的角部較理想為藉由調整所形成之導電層的膜厚而加以控制,亦可於去除光阻圖案之後,以濺鍍法或濕式蝕刻等種種方法,對所獲得之導電層進行平坦化處理或是加工等,而藉此進行控制。
將發光元件載置於導電層的上面並加以電性連接,並以包覆這些構成構件之方式塗佈透光性絕緣構件4並加以硬化。
接著僅將上述金屬母型材捲取於滾輪,而從上述導電層2a、2b及上述透光性絕緣構件4將金屬母型材加以剝離。殘存於所獲得之發光裝置的底面之金屬中間層,可因應目的作為反射構件或接合促進劑而使用,或是藉由選擇性蝕刻,使用幾乎不會對導電層2a、2b及透光性絕緣構件進行蝕刻之金屬中間層的蝕刻液,而去除金屬中間層。尤其是於以具有較高的熱傳導性之材料構成導電層2a、2b時,可在不會過度進行導電層2a、2b的蝕刻下,去除金屬中間層。
以下係詳細敘述本發明之發光裝置及發光裝置之製造方法的實施例。
首先使用厚度為60 μ m之SUS430的帶狀材做為金屬母型材,於上述金屬母型材的上面,形成有由Ti所組成之中間層,並於氫氣環境下進行熱處理。
接著形成厚度為70 μ m的光阻,並以於0.2mm的間距,使□0.5mm×0.2mm的開口部與□0.5mm×1.0mm的開口部並列之方式而進行光阻圖案化。
於開口部內形成Au/Ni層。Ni層的上面係形成為較上述光阻的上面還低。接著將Au層形成為較光阻上面還高。之後對最表面的Au層施以Ag鍍敷。
最後去除光阻,藉此可獲得具有厚度及突出長度各為50 μ m的突起2c、2d之導電層2a、2b。
接下來將發光元件1電性連接於一對導電層2a、2b。具體而言,發光元件1係使用,於460nm左右具有發光峰值波長且於同一面側具有正負電極之氮化鎵系化合物半導體,並以晶粒接合構件5固定於一邊的導電層2a上。其次於上述發光元件1之一對電極上形成Au凸塊後,進行從上述一邊的導電層2a往上述Au凸塊之導線接合(BSOB)。
之後以包覆上述各個構成構件之方式塗佈矽樹脂4,並進行硬化。
接著僅將金屬母型材捲取於滾輪,而從導電層2a、2b及矽樹脂剝離。
將所獲得之連續的發光裝置,於上述導電層的突起之外周部的矽樹脂部分進行切割,藉此可獲得第1圖所示之發光裝置。
如此所獲得之發光裝置,係成為1.6mm×0.8mm×0.2mm之超薄型、小型化的發光裝置,並具有優良的可靠度。
除了以於各自隔著0.2mm的間距,使□0.5mm×0.2mm的開口部、□0.5mm×1.0mm的開口部與□0.5mm×0.2mm的開口部並列之方式形成光阻的圖案,並於一個發光裝置中形成2個導線接合用的導電層以及1個發光元件載置用的導電層之外,其他與實施例1相同而製造,藉此獲得第2圖所示之發光裝置。如此所獲得之發光裝置,係具有較第1圖所示之發光裝置更為優良的散熱性。
於金屬母型材上,預先藉由蝕刻而形成複數個深度為80 μ m之凹部,而形成具備可收納發光元件1之凹部之導電層2a。
接著將發光元件1載置於上述凹部內,於各自以導線3將上述發光元件1的各個電極與各導電層2a、2b加以電性連接後,於上述凹部內填入可吸收來自於上述發光元件的光線並轉換為長波長之含有螢光物質的色轉換構件6。具體而言,係以使重量比成為100:15之方式,將矽樹脂與(Y0 . 8
Gd0 . 2
)3
Al5
O1 2
:Ce0 . 0 3
之螢光物質加以混合攪拌而構成的混合物填入於凹部內,放置4小時使上述螢光物質沉降。填入量較理想為作成可成為往中央部突出之形狀的量。此係因可提高聚光性之故。之後於50℃下將矽樹脂加熱3小時,並一邊從50℃上升至150℃一邊加熱1小時,之後於150℃下加熱4小時,於此製程中使矽樹脂硬化,而形成色轉換構件6。
接著,將透光性絕緣構件4成形為可使來自於發光元件1之光線聚光之形狀。具體而言,可藉由壓接成形法或轉注模製法而成形。
將如此所獲得之發光裝置,於導電層的突起之外周部的矽樹脂部分進行切割,藉此可獲得第3圖所示之聚光率極高的發光裝置。
除了以於隔著0.2mm的間距下使□0.5mm×0.2mm的開口部並列之方式形成光阻的圖案之外,其他與實施例1相同而形成導電層2a、2b。
接下來隔介異向性導電構件7,對上述發光元件1及上述導電層2a、2b進行覆晶安裝。
關於異向性導電構件,可採用下列材料,亦即於塑膠粒子表面以無電解鍍敷形成Ni薄膜後,以Au薄膜進行置換鍍敷而形成導電性粒子,並添加5vol%的該導電性粒子於矽樹脂中而形成者。此外,只要為於以具有熱可塑性或熱硬化性之有機物或無機物所組成之黏著劑中包含導電性粒子者,則並無任何限制而可加以使用。尤其是,較理想為使用可有效率的將來自於發光元件1之光線加以反射之導電性粒子。具體的導電性粒子,可利用於Ni粒子或是塑膠、二氧化矽等粒子的表面,具有由Ni或Au等所組成之金屬塗膜者。此外,導電粒子的含有量為,對黏著劑為0.3vol%至12vol%,較理想為0.3vol%至1.2vol%,藉此,可藉由載置發光元件1時之加熱及加壓而容易形成導通。
最後,對上述導電層的中心部分進行切割,藉此可獲得第4圖所示之超薄型、小型化的發光裝置。
在此,於各項實施例中,切割線係可配合所期望之發光裝置的大小,如實施例1至3所示,選擇於導電層的外周部之矽樹脂部分進行切割,或是如實施例4所示,選擇於導電層上進行切割。
1...發光元件
2a...導電層
2b...導電層
2c...突起
2d...突起
3...導線
4...透光性絕緣構件
5...晶粒接合構件
6...色轉換構件
7...異向性導電構件
第1(a)圖係顯示本實施形態之發光裝置之概略俯視圖,第1(b)圖係顯示第1(a)圖的A-A線之概略剖面圖。
第2(a)圖係顯示本實施形態之發光裝置之概略俯視圖,第2(b)圖係顯示第2(a)圖的A-A線之概略剖面圖。
第3(a)圖係顯示本實施形態之發光裝置之概略俯視圖,第3(b)圖係顯示第3(a)圖的A-A線之概略剖面圖。
第4(a)圖係顯示本實施形態之發光裝置之概略俯視圖,第4(b)圖係顯示第4(a)圖的A-A線之概略剖面圖。
1...發光元件
2a...導電層
2b...導電層
3...導線
4...透光性絕緣構件
Claims (7)
- 一種發光裝置,具有發光元件;載置有該發光元件或是與上述發光元件電性連接之複數個導電層;及密封上述發光元件並且於底面具有上述導電層之透光性絕緣構件者,其特徵為:上述導電層係於側面的一部分具有突起,上述突起之上面側的角部具有圓弧部分;上述突起係從上述導電層朝側面方向突出5μm以下,厚度為上述導電層的全厚度之40%至60%,且與相鄰之導電層的突起的間隔為50μm至300μm;上述導電層係具有鎳/金層,在該金層上鍍覆有銀。
- 如申請專利範圍第1項之發光裝置,其中,上述突起係位於上述導電層的上面側。
- 如申請專利範圍第1項之發光裝置,其中,上述鎳層係在70μm以下。
- 一種發光裝置之製造方法,該發光裝置具有:發光元件;載置有該發光元件或是與上述發光元件電性連接之複數個導電層;及密封上述發光元件並且於底面具有上述導電層之透光性絕緣構件者,該製造方法包含以下之步驟:於金屬母型材的上面塗佈光阻,並去除上述光阻的一部分而形成開口部;使導電粒子附著於上述開口部內而形成導電層,並且使上述導電粒子從開口部內附著整個上述光阻的上 面,而於導電層之側面的一部分形成突起;於去除上述光阻後,將發光元件載置於上述導電層的上面並加以電性連接,並以透光性絕緣構材加以被覆;從上述導電層的底面及上述透光性絕緣構件的底面剝離金屬母型材;上述突起係從上述導電層朝側面方向突出5μm以下,厚度為上述導電層的全厚度之40%至60%,且與相鄰之導電層的突起的間隔為50μm至300μm;上述導電層係具有鎳/金層,在該金層上鍍覆有銀。
- 如申請專利範圍第4項之發光裝置之製造方法,其中,於金屬母型材的上面塗佈光阻之前,形成從銅、鈦、銀、錫、鎳、鋅或以該等金屬中的任一者為主要成分的合金所選擇的金屬中間層作為剝離層。
- 如申請專利範圍第5項之發光裝置之製造方法,其中,在金屬母型材與上述金屬中間層的界面形成氧濃化層。
- 如申請專利範圍第4項之發光裝置之製造方法,其中,上述導電粒子的層積高度係為上述光阻厚度的1.3倍至2.5倍之厚度。
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