CN1976079A - 发光装置以及发光装置的制造方法 - Google Patents
发光装置以及发光装置的制造方法 Download PDFInfo
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- CN1976079A CN1976079A CNA2006101636541A CN200610163654A CN1976079A CN 1976079 A CN1976079 A CN 1976079A CN A2006101636541 A CNA2006101636541 A CN A2006101636541A CN 200610163654 A CN200610163654 A CN 200610163654A CN 1976079 A CN1976079 A CN 1976079A
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- light
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Abstract
本发明公开一种可靠性高的薄型·小型化发光装置及其制造方法,其特征在于,具有:发光元件;多个导电层,其载置该发光元件或与所述发光元件电连接;透光性绝缘构件,其对所述发光元件进行密封,并在底面上具有所述导电层,所述导电层在侧面的一部分具有凸起,至于所述凸起,上面侧的角部具有圆角。
Description
技术领域
本发明涉及发光装置以及发光装置的制造方法,更详细来说,本发明涉及用于照明·汽车·产业机器·一般民用机器(显示器等)的发光装置,特别是涉及适合利用于薄型/小型类型的表面安装型的发光装置及其制造方法。
背景技术
作为以往的表面安装型发光装置,可以举出如下的发光装置,例如在玻璃环氧树脂、陶瓷等绝缘性基板的表面形成图案的一对的导电性构件上,电连接发光元件,并利用透光性绝缘构件密封发光元件附近。
这种发光装置中,由于制造关于和部件数较多,因此制造成本较高。此外,由于从发光元件产生的热是借助于由导热率低的绝缘性材料构成的基板而放热到外部,因此难于得到充分的放热性。结果,在使用高输出型发光元件的情况下,不能适用于希望连续使用的情况。另外,虽然若将前述绝缘性基板减薄则能够缩短放热路径,但是不能够确保形成于上面的导电性构件的强度。
这样,难于同时实现发光装置的放热性的提高以及薄型·小型化。
另外,也提案了一种发光装置,其没有上述那样的基板,而通过将一对电极固定于密封了发光元件的透光性树脂的底面而形成(日本特开2001-203396号公报)。
可是,由于埋入了树脂的电极的侧面相对于埋入方向几乎平行,因此由于向基板的安装工艺和安装后的使用时所受到的冲击等,所述电极容易从树脂脱离,发光装置的一体性失调。特别是,由于对于发光装置的情况,密封发光元件的绝缘构件必须具有透光性,因此不能够通过含有填料等而提高机械强度,该问题产生的概率非常之高。
另外,关于该发光装置,具体的制造方法不再说明。
发明内容
本发明目的为提供一种可靠性高的薄型·小型化发光装置及其制造方法。
本发明的发光装置,其特征在于,具有:发光元件;多个导电层,其载置该发光元件或与所述发光元件电连接;透光性绝缘构件,其对所述发光元件进行密封并在底面上具有所述导电层,所述导电层在侧面的一部分具有凸起,至于所述凸起,上面侧的角部具有圆角。
本发明的发光装置的制造方法,是具有发光元件;载置该发光元件或与所述发光元件电连接多个导电层;以及对所述发光元件进行密封,并在底面上具有所述导电层的透光性绝缘构件的发光装置的制造方法,其包括:在所述金属母型材的上面涂布抗蚀剂,并除去所述金属抗蚀剂的一部分而形成开口部,在所述开口部内附着导电粒子而形成导电层,并从开口部内横跨上述抗蚀剂的上面地附着所述导电粒子,并在导电层的侧面的一部分形成凸起,在除去所述抗蚀剂后,在所述导电层的上面载置发光元件,并电连接,并由透光性绝缘构件所覆盖,从所述导电层的底面和所述透光性绝缘性构件的底面将金属母型材剥离。
本发明的发光装置,可以作为载置有发光二极管、半导体激光器等发光元件的发光装置,而用于各种指示器、光传感器、显示屏、光耦合器、背光光源和光打印头等。
附图说明
图1中,图1(a)是表示本实施方式所涉及的发光装置的概略俯视图,图1(b)是图1(a)的A-A线的概略剖面图;
图2中,图2(a)是表示本实施方式所涉及的发光装置的概略俯视图,图2(b)是图1(a)的A-A线的概略剖面图;
图3中,图3(a)是表示本实施方式所涉及的发光装置的概略俯视图,图3(b)是图3(a)的A-A线的概略剖面图;
图4中,图4(a)是表示本实施方式所涉及的发光装置的概略俯视图,图4(b)是图4(a)的A-A线的概略剖面图。
具体实施方式
以下,参照附图用于实施本发明的最佳方式。
其中,以下所示的方式,是例示用于对本发明的技术思想具体化的发光装置,本发明不将发光装置限定于如下。另外,本说明书绝不是将专利请求范围所表示构件特定于实施方式的构件。实施方式所记载的构成部件的尺寸、材质、形状、其相对的配置,不限于特别特定的记载,其主旨并不是将本发明的范围限定于此,不过是简单的说明例。另外,各附图所表示的构件的大小和位置关系等,为了明确地进行说明,有时也会有所夸张。此外,在以下的说明中,对于同一名称、符号,表示同一或同质的构件,并适当省略详细的说明。此外,构成本发明的各要素中,以同一构件构成多个要素,也可以由同一构件兼用多个要素,也可以由多个构件分担一个构件的功能而实现。
本发明的发光装置,如图1(a)和图1(b)所示的那样,具有:发光元件1;一方的导电层2a,其载置所述发光元件1,并通过导线3与所述发光元件1的一方的电极电连接;另一方的导电层2b,其通过导线3与所述发光元件1的另一方的电极电连接;透光性绝缘构件4,其对它们进行密封。在透光性绝缘构件4的底面,离间地配置一方的导电层2a和另一方的导电层2b。一方的导电层2a和另一方的导电层2b,分别在侧面具有凸起2c·2d。
(发光元件)
本实施方式中的发光元件1,能够成为发光二极管、激光二极管等发光装置的光源。另外,在本方式中的发光装置中,载置有:发光元件1;受光元件;以及使这些半导体元件免受过电压破坏的保护元件(例如,齐纳二极管和电容器),或者将它们组合的器件。
作为发光元件1的一个例子,说明LED芯片。作为构成LED芯片的半导体发光元件,能够举出使用ZnSe、GaN等各种半导体的器件,但是在设计为具有荧光物质的发光装置的情况,适合举出:能够效率良好地激励其荧光物质并可以发光短波长的氮化物半导体(InxAlYGa1-X-YN、0≤X,0≤Y,X+Y≤1)。并能够根据半导体层材料及其混晶程度而对发光波长种种地进行选择。例如,LED芯片可以是不仅输出可见光区域的光,而且也可以是输出紫外线和红外线的发光元件。
另外,本实施方式的发光装置中,发光元件1使用在同一面侧具有正负的一对电极的器件,但是不是限定于此的器件,也可以使用在相面对的面分别具有正和负的电极的器件。
(导电层)
在本实施方式中所使用的多个导电层2a·2b是与透光性绝缘材料的紧贴性、放热性以及导通性良好的材料即可,不做特别限定,可以由各种材料构成。
特别是,在薄型/小型化发光装置的情况下,由于与电路基板结合时的强度成为必要。因此,导电层的硬度优选为450Hv~550Hv。另外,导电层的热传导度,优选为0.01cal/(S)(cm2)(℃/cm)以上。更优选使用0.5cal/(S)(cm2)(℃/cm)的材料。另外,电阻阻抗优选为300μΩ·cm以下,进一步优选为3μΩ·cm以下。
作为为了形成这些导电层所使用的具体的材料,可以例举:由Cu、Au、Ni、W、Mo、Mn和Ta等高熔点金属或其微粒子构成的镀层等。
这些高熔点金属中,特别是,Ni与其他金属相比,具有拉伸强度高、弹性率高,高温下强度也高,热膨胀系数较小等优良的物理性质。这种高熔点金属适于作为载置有发热量多的LED和LD等半导体发光元件的材料。另外,优选为,在导电层的表面设置光洁度为90以上的导电性膜,由此能够设计兼具反射功能的导电层。这里,所谓光洁度,是基于JIS标准将来自发光元件的光以60度入射时的镜面反射率为10%,并将折射率1.567的玻璃面规定为光洁度0,由日本电色工业株式会社制VSR300A微小面色差计测定的值。另一方面,也可以使用ITO和IZO等透明电极材料,使成为能够全面发光的发光装置。
(凸起2c·2d)
本实施方式中的导电层2a·2b,在侧面具有凸起2c·2d。由此能够提高导电层2a·2b和透光性绝缘材料4的结合性。在对安装于电路基板的发光装置施加冲击的情况下,仅简单地将较薄的导电层固定于透光性绝缘构件的背面,不能够保持发光装置的一体化。另外也可以考虑借助于蚀刻而使导电层的侧面毛化从而提高与透光性绝缘构件的紧贴性,但是由于多个导电层远离而配置,因此若将与发光元件相面对的导电层的侧面作为为粗面,则照射到所述粗面上的光在离间部分的绝缘构件中被封闭的可能性较高。另外,作为为透光性绝缘构件提高机械强度的方法,有添加氧化钛、氧化锆、氧化铝和氧化硅等扩散剂,添加煅制二氧化硅和煅制铝(ヒユ一ルドアルミニウム)等增粘剂,或颜料等方法,但是为了得到优选的强度就必须多量地含有,透光性将会降低。这样,难于在维持光取出效率的同时提高密封构件自身的强度。因此,在本发明中,通过使与发光装置的基本构成部件的大体接触(连接)的导光层为光学特性好的形状以及容易紧贴的形状,提高了发光装置整体的一体性。
构成凸起2c·2d的材料,可以从构成导电层的材料中选择。另外,也可以未必是与上述导电层相同的材料。虽然凸起2c·2d的形状不作特别限定。但是,优选为角部带有圆角。藉此,从发光元件照射的光(例如,从凸起的上侧方照射的光)被导电层的侧面所反射,能够抑制该光被导电层(凸起)的下部所遮闭。也就是说,通过带有圆角,从发光元件照射的光借助于凸起的圆角容易地向光出射面(例如,上方)方向反射。
另外,凸起的大小(凸起长度)不做特别限定,优选为在导电层的上面侧,在侧面方向大约5μm以下,从导电层凸出。由此能够确实地将导电层一体地固接于透光性绝缘构件的背面。另外,凸起的大小,未必一定要均一,也可以部分地幅度宽/幅度窄,厚膜/薄膜。虽然优选为凸起形成于导电层的周围的全部,但是也可以在一部分缺损。凸起的位置虽然不做特别限定,但是优选为位于导电层的上面侧,由此能够降低由相面对的导电层的远离部分引起的光损失。此外,优选为,凸起的上面侧的角部,带有圆角。进一步优选为,凸起的侧面从上面到底面以抛物线状垂下。由此,能够得到高亮度的发光装置。这里,所谓上面,说的是与发光装置的光取出方向相对应的面,并将与所述上面相面对的作为底面。
另外,至于凸起2c·2d的厚度,优选为各导电层的总厚度的10%~70%,更优选为30%~60%,进一步优选为40%~60%。另外,关于一方的导电层2a的发光装置内部侧的凸起2c,以及与一方导电层2a相邻接的另一方的导电层2b的发光装置内部侧的凸起2d的间隔,若考虑生产性,则优选为50μm~1mm。此外,若考虑光的取出效率,则优选为50μm~300μm,更优选为50μm~100μm。
另外,也可以如图3所示的那样,在一方的导电层2a的一端形成具有平坦的底面的凹部,并在所述凹部内载置所述发光元件1。优选为,一方的导电层2a的另一端的底面以成为与凹部的底面大致平行的位置的方式而成为凸形状。另外,优选为,另一方的导电层2b具有:与一方的导电层2a的一端在大致同一上面上相面对的的一端,以及位于与一方的导电层2a的另一端大致同一上面的另一端。通过设计为这种结构,能够在不利用其他构件对导电层的背面进行固强的情况下,提高发光装置的机械强度。另外,由于多数地具有安装面的支点,因此能够提高安装精度。另外,优选为,导电层具有大致均一的厚度,由此能够进一步提高机械强度。
(透光性绝缘构件4、色变换构件6)
本实施方式的发光装置,目的在于保护发光元件1、导线3等免受水分、尘埃和外力的损伤,并提高这些各构件的一体化以及发光元件1的光取出效率,并由透光性绝缘构件4所密封。透光性绝缘构件4的材料,可以从环氧树脂、硅树脂、尿素树脂等透光性树脂、以及如玻璃等那样的有透光性倾向的树脂中选择。另外,在这种透光性绝缘构件4中,也可以使含有吸收来自发光元件的光的至少一部分并发出具有不同波长的光的荧光物质,而作为色变换构件。此时,作为透过型绝缘构件4,优选使用耐热性和耐光性优良,即使曝光于含有紫外线的短波长的高能量光也难于发生着色劣化的硅树脂和变性硅树脂。由此,能够抑制色错位和色不均的产生。另外,即使发生了附有焊锡等被覆构件的热膨胀和热收缩的重复过程,也能够抑制对发光元件1和导电层2a·2b的进行连接的导线3的断线和模塑结合(ダイボンド)构件5的剥离。
能够用于本方式的荧光物质,可以是对发光元件的光进行变换的荧光物质,将来自荧光元件的光变换为更长波长的荧光物质效率更高。在来自荧光元件的光是能量高的短波长的可见光情况下,优选使用作为铝氧化物系列荧光体的一种的YAG:Ce荧光体以及Ca2Si5N8荧光体。特别是,YAG:Ce荧光体由于因其含有量而使来自LED芯片的蓝色系的光部分吸收并发出成为互补色的黄色系的光,因此能够比较简单地形成发出白色系的混色光的高输出的发光二极管。
(连接构件5)
在本实施方式中,在成为发光装置的大致中央部的一方的导电层2a的上面模塑结合发光元件1,所述发光元件1的各电极分别通过导线3与所述一方的导电层2a和另一方的导电层2b电连接。
所谓本实施方式的模塑结合构件5是,用于固定发光元件1和导电层2a的构件。例如,能够使用热硬化树脂等以往以来所使用的模塑结合构件5,具体来说,可以举出环氧树脂、丙烯树脂、和酰亚胺树脂等。另外,为了调整模塑结合构件5的热膨胀率,也可以使得在这些树脂中含有填料。由此,能够抑制发光元件从导电层2a剥离。另外,在将发光元件1模塑结合并与导电层2a电连接以及需要高放热性的情况下,优选使用Ag糊料,碳糊料、ITO糊料或金属凸缘(bump)。特别是在发热量多的高功率系发光装置的情况下,优选使用因熔点高而使得高温下组织中的构造变化较少、力学特性降低少的Au-Sn系列的共晶焊锡。但是,在将对来自发光元件1的光的反射率高的构件作为模塑结合构件5的情况下,通过所述模塑结合构件5吸收光,并将光封闭到发光元件1内部,因此所述模塑结合构件5相对于所述发光元件1的底面的占有率优选为5%~95%,更优选为20%~70%,进一步优选为20%~50%。利用该范围内含有率,能够寻求发光元件1的放热性以及安装性以及光取出效率的同时提高。
(导线3)
在本方式中,连接发光元件1的电极和导电层2a·2b的导线3,可以寻求与导电层2a·2b的欧姆性、机械的连接性、电传导性以及热传导性好的材料。作为热传导度优选为0.01cal/(s)(cm2)(℃/cm),更优选为0.5cal/(s)(cm2)(℃/cm)。另外,考虑到作业性等,优选为导线3的直径是Φ10μm~Φ45μm。作为具体的导线的材料,可以列举使用Au、Cu、Pt、Al等金属以及使用它们的合金的导电性导线。另外,在本实施方式中,优选为导线能够从导电层2a·2b侧向发光元件1的结合(bonding)(BSOB(Bond Stitch Ball),由此能够形成高速·窄间距的低超环路,并能够实现超薄型·小型化的发光装置。另外,由于导线的应力点是一个位置,因此能够得到可靠性高的发光装置。
<发光装置的制造方法>
(第一工序)
在本实施方式的发光装置中,各构成构件均将金属母型材作为包裹材使用而形成。由此,能够得到薄且精度高的发光装置。
所谓金属母型材,是指如下部件,其被延展(張り合わせる)为薄的导电层的薄箔,并在制造时,在金属母型材的上面安装发光装置的各构成构件即导电层、发光元件以及透光性绝缘构件,以确保发光装置整体的刚性。另外,在发光装置制成之后,金属母型材被拉剥而除去。能够进行这种剥下(引き剥がす)的金属母型材的材料,不做特别的限定,但是特别优选使用具有体心立方结构的金属即Fe、Mo、W以及细丝(フイラメント)系列不锈钢等金属。由此,与金属母型材在上面层叠的导电层的拉剥强度的控制较为容易,能够提高发光装置的生产性。膜厚适合于大致为1μm~30μm。
该金属母型材进一步优选为,具有能够对在上面层叠的导电层2a·2b和透光性绝缘构件4进行拉剥的剥离层。作为剥离层,可以使用金属中间层。所谓金属中间层,优选为,在上面对抗蚀剂进行图案化时的蚀刻工艺中能够作为阻挡层而发挥功能的材料。具体来说,至于金属中间层,可以使用Cu、Ti、Ag、Sn、Ni、Zn或以这些金属的任何一种为主要成分的合金。特别是,在以Ti为主要成分的材料中,优选为包含氢,由此能够使金属中间层自身变脆,并成为容易坏垮的性质,并能够具备适宜的拉剥强度。在以Ti为主要成分的材料中,由于脆化较为充分,并使得将导电层和金属母型材剥下时的剥下强度均一化,因此进一步优选为,在对各发光装置的各构成部件安装的工艺和搬送工艺中,从防止导电层被剥离的观点出发,优选包含0.5mass%~5mass%的氢。另外,在以Zr为主要成分的材料中,优选包含0.02mass%~2.5mass%的氢。这里,所谓的主要成分,是指使含有那种相应的材料50mass%以上。至于剥离层的厚度,大约10μm以下较为适宜。至于所被层叠的导电层和所述金属母型材之间中的剥下强度,从防止蚀刻工序和搬运工序等的操纵中的导电层的部分剥离的观点,以及在形成发光装置的各构成部件后的剥下工序中防止形成后的导电层相对于金属母型材不剥离的观点出发,优选为位于0.01~0.8N/mm的范围内。
优选为在金属母型材和金属中间层的界面形成弱接合层。至于弱接合层,优选为氧浓化层。通常,氧浓化层较为脆弱。因此,通过预先在金属母型材和金属中间层的界面部分地形成这种氧浓化层,能够控制剥下强度。这里,所谓氧浓化层是指与金属中间层的部分相比氧含量较高。至于弱接合层或氧浓化层,虽然可以在金属母型材和金属中间层的界面作为层而包含,但是也可以以部分地散布的方式配置。至于厚度,例如,大约3μm以下较为适宜。
在如此而构成的可剥离的金属母型材上,通过对抗蚀剂进行图案化,能够形成与所望的导电层的上面形状相对应的开口部。抗蚀剂图案的侧面,优选为,大致垂直于金属母型材。所述开口部的间距,对应于所望的发光装置的导电层的凸起的凸出长度而调整。
(第二工序)
接下来,在开口部内的金属母型材上使导电粒子附着而形成母型材。这里作为导电粒子的层叠方法,可以采用真空蒸镀、溅射、离子镀膜、电蒸发和电沉积等。特别是,真空蒸镀、电蒸发,成膜速度较快而优选。另外,在形成超薄膜的导电层的情况下,使用溅射法、离子镀膜法等能够得到品质良好的膜。另外,优选为在抗蚀剂图案除去前后利用溅射法、湿蚀刻法等各种方法进行平坦化或加工等。
接连不断地从开口部内横跨所述抗蚀剂的上表面地附着导电粒子,而形成导电层的凸起。此时,通过调整附着量,能够调整导电层2a·2b的凸起的形状(厚度、凸出长度等)。
这里的总的导电粒子的附着层的厚度,优选为的抗蚀剂图案的厚度的1.3倍~2.5倍,更优选为1.5倍~2.3倍,进一步优选为1.8倍~2.0倍。
如此,将导电粒子层积后,利用使用了通常的抗蚀剂剥离液的湿蚀刻等,而除去抗蚀剂图案,由此能够形成导电层2a·2b。
另外,凸起的角部,优选为通过调整所形成的导电层的膜厚而进行控制,能够借助于在抗蚀剂图案除去后利用溅射法、湿蚀刻法等各种方法对所得到的导电层进行平坦化或加工的方法等,而进行控制。
(第三工序)
通过在导电层的上面载置发光元件并进行电连接,能够以覆盖这些构成构件的方式涂布透光性绝缘构件4并使之硬化。
(第四工序)
仅将所述金属母型材卷取到辊子上,而将金属母型材从所述导电层2a·2b和所述透光性绝缘构件4剥离。残存于所得到的发光装置的底面的金属中间层,根据目的,作为反射构件和接合促进剂而使用,或者通过选择蚀刻而对导电层2a·2b和透光性绝缘构件几乎不蚀刻地,使用蚀刻液将金属中间层除去。特别是,在利用具有高的热传导性的材料而构成导电层2a·2b的情况下,能够在不过度地蚀刻导电层2a·2b的情况下,除去金属中间层。
以下,详述本发明的发光装置及其制造方法的实施例。
(实施例1)
作为金属母型材,使用厚度是60μm的SUS430带材,并在上述金属母型材的上表面形成由Ti构成的中间层,并在氢气气氛气中,实施热处理。
接下来,形成厚度70μm的抗蚀剂,并且以□0.5mm×0.2mm的开口部和□0.5mm×1.0mm的开口部以0.2mm间距并列的方式对抗蚀剂进行图案化。
在开口部内形成Au/Ni层。并以Ni层的上表面比所述抗蚀剂层的上表面低的方式形成。并且,以比抗蚀剂上表面高的方式形成Au层。接下来,对作为最表面的Au层实施镀Ag。
最后,通过除去抗蚀剂,能够得到厚度和凸出长度分别是50μm并具有凸起2c·2d的导电层2a·2b。
接下来,将发光元件1电连接于一对的导电层2a·2b。具体来说,作为发光元件1,使用在大约460nm具有发光峰值波长且在同一面侧具有正负的电极的氮化钙系化合物半导体,并在一方的导电层2a上通过模塑结合树脂5而固定。接下来在所述发光元件1的一对电极上形成金凸缘(bump)后,从所述一方的导电层2a向所述Au凸缘进行导线连接(BSOB)。
接下来,以覆盖这些各构成部件的方式涂布硅树脂4,并使之硬化。
接下来,仅将金属母型材卷取于辊子,而从导电层2a·2b和硅树脂4剥离。
通过所述导电层的凸起的外周部的硅树脂部分,对所得到的连续的发光装置进行(ダイシング)而能够得到图1所示的发光装置。
如此而得到的发光装置,是1.6mm×0.8mm×0.2mm的超薄型·小型化,具有优良的可靠性。
(实施例2)
除了按照□0.5mm×0.2mm的开口部和□0.5mm×1.0mm的开口部和□0.5mm×0.2mm的开口部分别以0.2mm间距并列的方式对抗蚀剂进行图案化,并在一个发光装置中将导线连接用导电层设计为两个,将发光元件的载置用的导电层设计为1个以外,与实施方式1同样地进行制造,而得到图2所示的发光装置。如此而得到的发光装置,与图1相比热拉伸性更加优良。
(实施例3)
在金属母型材上通过蚀刻预先形成多个深度为80μm的凹部,并形成具备能够收置发光元件1的凹部的导电层2a。
接下来,将发光元件1载置于所述凹部内,并通过导线3对所述发光元件1的各电极和各导电层2a·2b进行电连接后,由所述凹部内吸收来自所述发光元件的光,并填充含有能够向长波长变换的荧光物质的色变换构件6。具体来说,将以硅树脂和(Y0.8Gd0.2)3Al5O12:Ce0.03荧光物质的重量比为100∶15的方式混合搅拌而形成的混合物,填充到凹部内,放置4小时,使所述荧光物质沉淀。优选为,填充量为成为在中央部不凸出那样的形状的量。因为能够提高聚焦性。将硅树脂在50℃下保持3小时,并以1小时从50℃上升到150℃,并在150℃下保持4小时,通过这一工序使之硬化而形成色变换构件6。
接下来,将透光性绝缘构件4成形为能够将来自发光元件1的光聚焦的形状。具体来说,可以通过压结成形、转移模(トランスフア一モ一ルド)而成形,通过用导电层的凸起的外周部的硅树脂对如此而得到的发光装置进行切割(ダイシング),能够得到图3所示的聚焦率高的发光装置。
(实施例4)
除了按照□0.5mm×0.2mm的开口部以0.2mm间距并列的方式对抗蚀剂进行图案化外,与实施例1同样地形成导电层2a·2b。
接下来,通过异方性导电构件7,对所述发光元件1和所述导电层2a·2b进行芯片倒装安装。
作为异方性导电构件,可以使用如下器件,即在塑料粒子表面通过无电解镀形成Ni薄膜后,将对Au薄膜进行置换镀而形成的导电性粒子以5vol%添加到硅树脂中。另外,只要在由具有热可塑性或热硬化性的有机物或无机物构成的粘接剂中含有导电性粒子即可,可以不做特别地限定地使用。特别是,优选使用能够将来自发光元件1的光更高效率地反射的导电性粒子。作为具体的导电性粒子,能够使用Ni粒子,或在塑料、硅等粒子的表面具有由Ni和Au等构成的金属膜。另外,导电粒子的含有量,优选为相对于粘接剂为0.3vol%~12vol%、进一步优选为0.3vol%~1.2vol%,藉此能够借助于载置发光元件1时的加热和加压而容易地取得导通。
最后,通过在所述导电层的中心部分进行图案化,能够形成图4那样的超薄型·小型化发光装置。
这里,在各实施方式中,切割线,对应于所望的发光装置的尺寸,如实施例1~3那样,能够选择:在作为导电层的外周部的硅树脂部分中进行切割,或如实施例4那样在导电层中进行切割。
Claims (8)
1、一种发光装置,其特征在于,
具有:
发光元件;
多个导电层,其载置该发光元件或与所述发光元件电连接;
透光性绝缘构件,其对所述发光元件进行密封,并在底面上具有所述导电层,
所述导电层在侧面的一部分具有凸起,关于所述凸起,上面侧的角部具有圆角。
2、根据权利要求1所述的发光装置,其特征在于,
所述凸起位于所述导电层的上面侧。
3、根据权利要求1所述的发光装置,其特征在于,
所述导电层具有收置所述发光元件的凹部,在该凹部内具有能够将来自所述发光元件的光进行波长变换的色变换构件。
4、根据权利要求1所述发光装置,其特征在于,
凹部,位于导电层的上面侧。
5、一种发光装置的制造方法,是具有如下构件的发光装置的制造方法:即发光元件;多个导电层,其载置该发光元件或与所述发光元件电连接;透光性绝缘构件,其对所述发光元件进行密封,并在底面上具有所述导电层,其特征在于,
包括:
在所述金属母型材的上面涂布抗蚀剂,并除去所述金属抗蚀剂的一部分而形成开口部,
在所述开口部内附着导电粒子而形成导电层,并从开口部内横跨上述抗蚀剂的上面地附着所述导电粒子,并在导电层的侧面的一部分形成凸起,
在除去所述抗蚀剂后,在所述导电层的上面载置发光元件,并电连接,并由透光性绝缘构件所覆盖,
从所述导电层的底面和所述透光性绝缘性构件的底面将金属母型材剥离。
6、根据权利要求5所述覆盖装置的制造方法,其特征在于,
在金属母型材的上表面,预先形成能够收置所述发光元件的凹部。
7、根据权利要求5所述覆盖装置的制造方法,其特征在于,
金属母型材的所述凹部的底面和侧面所成的角为钝角。
8、根据权利要求5所述覆盖装置的制造方法,其特征在于,
在导电层的上面通过异方性导电材料而对所述发光元件进行芯片倒装。
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- 2006-11-22 TW TW103118032A patent/TWI545812B/zh active
- 2006-11-22 TW TW095143147A patent/TWI442594B/zh active
- 2006-12-01 KR KR1020060120431A patent/KR20070058346A/ko not_active Application Discontinuation
- 2006-12-01 CN CN200610163654A patent/CN100583471C/zh active Active
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CN106449935A (zh) * | 2015-08-07 | 2017-02-22 | 日亚化学工业株式会社 | 引线架、封装及发光装置、以及其制造方法 |
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TWI545812B (zh) | 2016-08-11 |
JP2007157940A (ja) | 2007-06-21 |
US7888869B2 (en) | 2011-02-15 |
CN100583471C (zh) | 2010-01-20 |
KR20130072228A (ko) | 2013-07-01 |
TW201434185A (zh) | 2014-09-01 |
TWI442594B (zh) | 2014-06-21 |
TW200729561A (en) | 2007-08-01 |
KR20070058346A (ko) | 2007-06-08 |
US20070126356A1 (en) | 2007-06-07 |
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