CN102576798A - 光反射性导电颗粒、各向异性导电粘合剂和发光装置 - Google Patents

光反射性导电颗粒、各向异性导电粘合剂和发光装置 Download PDF

Info

Publication number
CN102576798A
CN102576798A CN2010800477025A CN201080047702A CN102576798A CN 102576798 A CN102576798 A CN 102576798A CN 2010800477025 A CN2010800477025 A CN 2010800477025A CN 201080047702 A CN201080047702 A CN 201080047702A CN 102576798 A CN102576798 A CN 102576798A
Authority
CN
China
Prior art keywords
light
anisotropic
particle
light reflective
electroconductive adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2010800477025A
Other languages
English (en)
Other versions
CN102576798B (zh
Inventor
波木秀次
蟹泽士行
马越英明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dexerials Corp
Original Assignee
Sony Chemical and Information Device Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Chemical and Information Device Corp filed Critical Sony Chemical and Information Device Corp
Publication of CN102576798A publication Critical patent/CN102576798A/zh
Application granted granted Critical
Publication of CN102576798B publication Critical patent/CN102576798B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J123/00—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers
    • C09J123/02—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers not modified by chemical after-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/02—Ingredients treated with inorganic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29455—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/29486—Coating material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/2949—Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/29498—Coating material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/2954—Coating
    • H01L2224/29599—Material
    • H01L2224/296—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/2954—Coating
    • H01L2224/29599—Material
    • H01L2224/296—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/2954—Coating
    • H01L2224/29599—Material
    • H01L2224/296—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Conductive Materials (AREA)
  • Led Device Packages (AREA)

Abstract

用于在配线板上各向异性导电连接发光元件的各向异性导电粘合剂用的光反射性导电颗粒，由被金属材料包覆的芯粒和在该芯粒表面由折射率为1.52以上的光反射性无机颗粒形成的光反射层构成。作为折射率为1.52以上的光反射性无机颗粒，可以列举氧化钛颗粒、氧化锌颗粒或氧化铝颗粒。

Description

光反射性导电颗粒、各向异性导电粘合剂和发光装置
技术领域
本发明涉及用于在配线板上各向异性导电连接发光元件的各向异性导电粘合剂用的光反射性导电颗粒、含有该光反射性导电颗粒的各向异性导电粘合剂、使用该粘合剂在配线板上安装发光元件而形成的发光装置。
背景技术
使用发光二极管(LED)元件的发光装置被广泛使用，老式发光装置的结构如图4所示，使用芯片接合(Die Bond)粘合剂32将LED元件33接合在基板31上，再通过金属线37将其上面的p电极34和n电极35引线接合(Wire Bonding)在基板31的连接端子36上，LED元件33整体用透明模压树脂38密封。然而，当为图4的发光装置时，LED元件33发出的光中，射到上面侧的400～500nm的波长的光被金属线吸收，射到下面侧的一部分光被芯片接合粘合剂32吸收，存在着LED元件33的发光效率降低的问题。
因此，如图5所示，有人提出倒装芯片(Flip chip)安装LED元件33(专利文献1)。在该倒装芯片安装技术中，在p电极34和n电极35上分别形成有凸块39(bump 39)，并且在LED元件33的凸块形成面上设有光反射层40，以使p电极34和n电极35绝缘。而且，使用各向异性导电膏41或各向异性导电膜(没有图示)，并使其固化以连接固定LED元件33和基板31。因此，在图5的发光装置中，射向LED元件33上方的光没有被金属线吸收，而射向下方的光几乎都被光反射层40反射而射到上方，因此发光效率(光输出效率)不会降低。
现有技术文献
专利文献
专利文献1：日本特开平11-168235号公报
发明内容
发明所要解决的课题
但是，在专利文献1的技术中，必须通过金属蒸镀法等在LED元件33上设置光反射层40，以使p电极34和n电极35绝缘，存在着无法避免制造成本上升的问题。
另一方面，在没有设置光反射层40的情况下，已固化的各向异性导电膏或各向异性导电膜中的被金、镍或铜包覆的导电颗粒的表面呈茶色至暗茶色，另外，使导电颗粒分散的环氧树脂粘合剂本身也因通常用于使其固化的咪唑系潜在性固化剂而呈茶色，难以使发光元件发出的光的发光效率(光输出效率)提高，而且还存在着无法将光以其原来的颜色(发光色)反射的问题。
本发明的目的在于解决上述现有技术问题，提供光反射性导电颗粒、含有该光反射性导电颗粒的各向异性导电粘合剂、使用该粘合剂在配线板上倒装芯片安装发光元件而形成的发光装置，所述光反射性导电颗粒在使用各向异性导电粘合剂在配线板上倒装芯片安装发光二极管(LED)元件等发光元件以制造发光装置时，即使没有在LED元件上设置导致制造成本增加的光反射层，也不会使发光效率降低，而且不会使发光元件的发光色和反射光色之间产生色相差。
解决课题的方法
本发明人在若使各向异性导电粘合剂本身具有光反射功能，则发光效率不会降低的假设下，发现通过在混合于各向异性导电粘合剂中的导电颗粒的表面设置由特定的无机颗粒形成的白色～灰色的光反射层，可以使发光元件的发光效率不降低、并且在发光元件的发光色和导电颗粒的反射光色之间不会产生色相差，从而完成了本发明。
即，本发明提供：用于在配线板上各向异性导电连接发光元件的各向异性导电粘合剂用的光反射性导电颗粒，该光反射性导电颗粒由用金属材料包覆的芯粒、和在该芯粒表面由折射率为1.52以上的光反射性无机颗粒形成的光反射层构成。
本发明还提供：用于在配线板上各向异性导电连接发光元件的各向异性导电粘合剂，该各向异性导电粘合剂是将上述的光反射性导电颗粒分散在热固化性树脂组合物中形成的，所述热固化性树脂组合物提供对于波长380～780nm的可见光光路长1cm的光透过率(JISK7105)为80％以上的固化物。
本发明还提供发光装置，该发光装置是通过上述的各向异性导电粘合剂将发光元件以倒装芯片方式安装在配线板上而形成的。
发明效果
用于在配线板上各向异性导电连接发光元件的各向异性导电粘合剂用的本发明的光反射性导电颗粒，是由用金属材料包覆的芯粒、和在该芯粒表面由折射率为1.52以上的光反射性无机颗粒形成的白色～灰色的光反射层构成。另外，本发明的各向异性导电粘合剂是将该光反射性导电颗粒分散在热固化性树脂组合物中形成的，所述热固化性树脂组合物提供对于波长380～780nm的可见光光路长1cm的光透过率(JIS K7105)为80％以上的固化物。因此，使用本发明的各向异性导电粘合层在配线板上倒装芯片安装发光元件而得到的发光装置，即使使各向异性导电粘合剂固化也不会产生着色，而且所含有的光反射性导电颗粒对可见光的反射特性的波长依赖性小，因此发光效率提高，而且可以将发光元件的发光色以其原来的颜色反射。
附图说明
图1A是各向异性导电粘合剂用的本发明的光反射性导电颗粒的截面图。
图1B是各向异性导电粘合剂用的本发明的光反射性导电颗粒的截面图。
图2是本发明的发光装置的截面图。
图3是显示实施例1和比较例1的各向异性导电粘合剂的固化物对波长的光反射率的图。
图4是现有的发光装置的截面图。
图5是现有的发光装置的截面图。
具体实施方式
参照附图来详细说明本发明。
图1A、图1B是各向异性导电粘合剂用的本发明的光反射性导电颗粒10、20的截面图。首先，从图1A的光反射性导电颗粒开始说明。
光反射性导电颗粒10由被金属材料包覆的芯粒1、和在该芯粒表面由折射率为1.52以上的光反射性无机颗粒2形成的光反射层3构成。
折射率为1.52以上的光反射性无机颗粒2是在太阳光下呈白色的无机颗粒。因此，由它们形成的光反射层3呈白色～灰色。呈白色～灰色是指对可见光的反射特性的波长依赖性小、并且容易反射可见光。
作为优选的光反射性无机颗粒2，可以列举：选自氧化钛(TiO2)颗粒、氧化锌(ZnO)颗粒或氧化铝(Al2O3)颗粒的至少一种。需要说明的是，在氧化钛颗粒、氧化锌颗粒或氧化铝颗粒中，当担心已固化的各向异性导电粘合剂的热固化性树脂的固化物的光劣化时，可以优选使用对光劣化不具催化性、且折射率也高的氧化锌。
由于芯粒1为供给各向异性导电连接的芯粒，所以其表面由金属材料构成。这里，作为表面被金属材料包覆的方案，可以列举：芯粒1本身为金属材料的方案、或树脂颗粒的表面被金属材料包覆的方案。
作为金属材料，可以使用现有的各向异性导电连接用导电颗粒中使用的金属材料。例如可以列举：金、镍、铜、银、焊锡、钯、铝、它们的合金、它们的多层化物(例如镀镍/镀薄金物)等。其中，由于金、镍、铜使导电颗粒呈茶色，所以较其他金属材料更可以享受本发明的效果。
需要说明的是，当芯粒1是用金属材料包覆树脂颗粒的芯粒时，作为树脂颗粒，也可以使用一直以来用作各向异性导电连接用导电颗粒的金属包覆树脂颗粒的树脂颗粒部分。作为这样的树脂颗粒，例如有苯乙烯系树脂颗粒、苯并胍胺树脂颗粒、尼龙树脂颗粒等。用金属材料包覆树脂颗粒的方法也可以采用以往公知的方法，可以采用无电解电镀法、电解电镀法等。另外，包覆的金属材料的层厚为足以确保良好的连接可靠性的厚度，虽然也取决于树脂颗粒的粒径或金属的种类，但通常为0.1～3μm，优选为0.1～1μm。
若具有金属材料表面的芯粒1的粒径太小，则导通不良；若太大，则存在发生图案(pattern)间短路(short)的倾向，因此优选为1～20μm，更优选为3～5μm，特别优选为3～5μm。此时，芯粒1的形状优选为球形，但也可以是片状、橄榄球状。
关于由光反射性无机颗粒2形成的光反射层3的层厚，从其与芯粒1的粒径的相对大小的角度考虑，若相对于芯粒1的粒径太小，则反射率下降；若相对于芯粒1的粒径太大，则存在着导通不良的倾向，因此优选为0.5～50％，更优选为1～25％。
另外，在光反射性导电颗粒10中，若构成光反射层3的光反射性无机颗粒2的粒径太小，则难以产生光反射现象；若太大，则存在着难以形成光反射层的倾向，因此优选为0.02～4μm，更优选为0.1～1μm，特别优选为0.2～0.5μm。此时，从发生光反射的光的波长的角度考虑，光反射性无机颗粒2的粒径优选为应该反射的光(即发光元件发出的光)的波长的50％以上，以使该光不会透过。此时，作为光反射性无机颗粒2的形状，可以列举无定型、球状、鳞片状、针状等，其中，从光扩散效果的角度考虑，优选球状；从全反射效果的角度考虑，优选鳞片状的形状。
图1A的光反射性导电颗粒10，可以利用公知的成膜技术、即通过使大小粉末之间发生物理碰撞而在大粒径颗粒的表面形成由小粒径颗粒构成的膜的技术(所谓机械融合法)来制造。此时，光反射性无机颗粒2以侵入芯粒1的表面的金属材料中的方式被固定，另一方面，无机颗粒之间不易被熔合固定，所以无机颗粒的单层构成光反射层3。因此，在图1A的情况下，认为光反射层3的层厚与光反射性无机颗粒2的粒径同等或稍薄。
接下来，对图1B的光反射性导电颗粒20进行说明。在该光反射性导电颗粒20中，光反射层3含有发挥粘合剂作用的热塑性树脂4，通过该热塑性树脂4，光反射性无机颗粒2彼此之间也被固定，光反射性无机颗粒2形成多层(例如形成两层或三层)，在这方面与图1A的光反射性导电颗粒10不同。通过含有这样的热塑性树脂4，光反射层3的机械强度提高，无机颗粒不易发生剥落等。
关于图1B的光反射性导电颗粒20，可以利用机械融合法来制造。此时，除使用光反射性无机颗粒2和芯粒1以外，还可以结合使用微粒状的热塑性树脂4。需要说明的是，利用机械融合法制造图1B的光反射性导电颗粒20时，图1A的光反射性导电颗粒10也同时被制造。
作为热塑性树脂4，为了减轻环境负荷，可以优选使用不含卤素的热塑性树脂，例如可以优选使用聚乙烯、聚丙烯等聚烯烃或聚苯乙烯、丙烯酸树脂等。
这样的光反射性导电颗粒20，也可以利用机械融合法来制造。若机械融合法中使用的热塑性树脂4的粒径太小，则作为粘合剂的效果小；若太大，则难以附着在芯粒1上，因此优选为0.02～4μm，更优选为0.1～1μm。另外，若上述热塑性树脂4的混合量太少，则作为粘合剂的效果小；若太多，则生成不希望的颗粒聚集体；因此相对于100质量份的芯粒1，上述热塑性树脂4的混合量优选为0.2～500质量份，更优选为4～25质量份。
接下来，对本发明的各向异性导电粘合剂进行说明。该各向异性导电粘合剂是将本发明的光反射性导电颗粒分散在热固化性树脂组合物中形成的粘合剂，可以采用膏状、膜状等形态。
作为本发明的各向异性导电粘合剂中使用的热固化性树脂组合物，优选尽量使用无色透明的热固化性树脂组合物。这是为了使各向异性导电粘合剂中的光反射性导电颗粒的光反射效率不降低，而且在不改变入射光的光色的情况下反射该入射光。这里，无色透明是指各向异性导电粘合剂的固化物对于波长380～780nm的可见光光路长1cm的光透过率(JIS K7105)为80％以上、优选90％以上。
在本发明的各向异性导电粘合剂中，相对于100质量份的热固化性树脂组合物，若光反射性导电颗粒的混合量太少，则导通不良；若太多，则存在着发生图案间短路的倾向，因此优选为1～100质量份，更优选为10～50质量份。
关于本发明的各向异性导电粘合剂的反射特性，为了提高发光元件的发光效率，优选各向异性导电粘合剂的100μm厚的固化物对波长450nm的光的反射率(JIS K7105)至少为15％。为了达到这样的反射率，可以适当调整所使用的光反射性导电颗粒的反射特性或混合量、热固化性树脂组合物的混合组成等。通常，当增加反射特性良好的光反射性导电颗粒的混合量时，反射率也趋于增大。
另外，还可以从折射率(JIS K7142)的角度评价各向异性导电粘合剂的反射特性。即，这是由于，若各向异性导电粘合剂的热固化性树脂组合物与光反射性导电颗粒之间的折射率之差太大，则在光反射性导电颗粒与包围其的热固化性树脂组合物的固化物的界面光反射量增大。具体而言，优选热固化性树脂组合物与光反射性无机颗粒之间的折射率之差为0.02以上、优选为0.3以上。需要说明的是，通常以环氧树脂为主体的热固化性树脂组合物的折射率为约1.5。
作为构成本发明的各向异性导电粘合剂的热固化性树脂组合物，可以使用在现有的各向异性导电粘合剂或各向异性导电膜中使用的热固化性树脂组合物。通常，这样的热固化性树脂组合物是在绝缘性粘合剂树脂中混合固化剂而得到的组合物。作为绝缘性粘合剂树脂，优选列举：以脂环式环氧树脂或杂环系环氧化合物或加氢环氧树脂等作为主要成分的环氧系树脂。
作为脂环式环氧化合物，优选列举分子内具有2个以上的环氧基的化合物。这些化合物可以是液状，也可以是固体状。具体而言，可以列举：缩水甘油基六氢双酚A、3，4-环氧环己烯基甲基-3’，4’-环氧环己烯羧酸酯等。其中，从可以确保固化物具有适于安装LED元件等的光透过性、并且速固化性也优异的角度考虑，可以优选使用缩水甘油基六氢双酚A、3，4-环氧环己烯基甲基-3’，4’-环氧环己烯羧酸酯。
作为杂环系环氧化合物，可以列举具有三嗪环的环氧化合物，特别可以优选列举：1，3，5-三(2，3-环氧丙基)-1，3，5-三嗪-2，4，6-(1H，3H，5H)-三酮。
作为加氢环氧化合物，可以使用上述的脂环式环氧化合物或杂环系环氧化合物的氢化物、或其他公知的加氢环氧树脂。
在本发明中，脂环式环氧化合物或杂环系环氧化合物或加氢环氧化合物可以单独使用，但也可以是两种以上结合使用。另外，除上述环氧化合物以外，只要不损及本发明的效果，还可以结合使用其他环氧化合物。例如可以列举：使双酚A、双酚F、双酚S、四甲基双酚A、二芳基双酚A、氢醌、邻苯二酚、间苯二酚、甲酚、四溴双酚A、三羟基联苯、二苯甲酮、双间苯二酚、双酚六氟丙酮、四甲基双酚A、四甲基双酚F、三(羟基苯基)甲烷、联二甲苯酚(bixylenol)、苯酚酚醛、甲酚醛等多元酚与环氧氯丙烷反应得到的缩水甘油醚；使甘油、新戊二醇、乙二醇、丙二醇、チレングリコ一ル(丁二醇)、己二醇、聚乙二醇、聚丙二醇等脂肪族多元醇与环氧氯丙烷反应得到的聚缩水甘油醚；使对羟基苯甲酸、β-羟基萘甲酸等羟基甲酸与环氧氯丙烷反应得到的缩水甘油醚酯；由邻苯二甲酸、邻苯二甲酸甲酯、间苯二甲酸、对苯二甲酸、四氢邻苯二甲酸、内次甲基四氢邻苯二甲酸、内次甲基六氢邻苯二甲酸、偏苯三酸、聚合脂肪酸等聚羧酸得到的聚缩水甘油酯；由氨基苯酚、氨基烷基苯酚得到的缩水甘油基氨基缩水甘油醚；由氨基苯甲酸得到的缩水甘油基氨基缩水甘油酯；由苯胺、甲苯胺、三溴苯胺、二甲苯二胺、二氨基环己烷、双氨基甲基环己烷、4，4’-二氨基二苯基甲烷、4，4’-二氨基二苯基砜等得到的缩水甘油胺；环氧化聚烯烃等公知的环氧树脂类。
作为固化剂，可以使用酸酐、咪唑化合物、双氰等。其中，可以优选使用不易使固化物变色的酸酐、特别是脂环式酸酐系固化剂。具体而言，可以优选使用甲基六氢邻苯二甲酸酐(MeHHPA)等。
本发明的各向异性导电粘合剂的热固化性树脂组合物中，当使用脂环式环氧化合物和脂环式酸酐系固化剂时，关于各自的使用量，若脂环式酸酐系固化剂太少，则未固化环氧化合物变多，发生固化不良；若太多，则由于剩余的固化剂的影响，存在着粘附体材料的腐蚀得到促进的倾向，因此相对于100质量份的脂环式环氧化合物，以优选80～120质量份、更优选95～105质量份的比例使用脂环式酸酐系固化剂。
本发明的各向异性导电粘合剂，可以通过将光反射性导电颗粒和热固化性树脂组合物均匀混合来制造。另外，当以各向异性导电膜的形式使用各向异性导电粘合剂时，将其与甲苯等溶剂一同分散混合，之后涂布在进行了剥离处理的PET膜上使达到所期望的厚度，再于约80℃左右的温度下干燥即可。
接下来，参照图2对本发明的发光装置进行说明。此发光装置200是，在基板21上的连接端子22与分别形成于作为发光元件的LED元件23的n电极24和p电极25上的连接用凸块26之间涂布上述本发明的各向异性导电粘合剂，并倒装芯片安装有基板21和LED元件23的发光装置。这里，各向异性导电粘合剂的固化物100是光反射性导电颗粒10分散在热固化性树脂组合物的固化物11中形成的。需要说明的是，根据需要，可以用透明模压树脂密封整个LED元件23以覆盖该元件。
在如此构成的发光装置200中，LED元件23所发出的光中，朝着基板21侧发出的光被各向异性导电粘合剂的固化物100中的光反射性导电颗粒10反射，从LED元件23的上面射出。因此，可以防止发光效率的降低。
实施例
实施例1
(光反射性导电颗粒的制作)
将4质量份的平均粒径为0.5μm的氧化钛粉末(KR-380、チタン工业(株))和20质量份的外观色为茶色、平均粒径为5μm的Au包覆树脂导电颗粒(对平均粒径为4.6μm的球状丙烯酸树脂颗粒施行0.2μm厚的无电解镀金而得到的颗粒：ブライト20GNB4.6EH、日本化学工业(株))投入机械融合装置(AMS-GMP、ホソカワミクロン(株))中，在转速为1000rpm、旋转时间为20分钟的条件下，在导电颗粒的表面形成由氧化钛颗粒构成的约0.3μm厚的光反射层的膜，由此得到实施例1的光反射性导电颗粒。该光反射性导电颗粒的外观色为灰色。
(光反射率评价试验)
通过使用真空脱泡搅拌装置将15质量份所得的光反射性导电颗粒和100质量份折射率为约1.5的无色透明热固化型环氧系粘合剂组合物(YX-8000、JER(株))均匀混合，得到实施例1的各向异性导电粘合剂。
将所得的各向异性导电粘合剂涂布在陶瓷制的白色板上，使干燥厚度达到100μm，之后在200℃下加热1分钟，使其固化。对于该固化物，使用分光光度计(U3300、(株)日立制作所)，测定对波长450nm的光的反射率(JIS K7105)。所得结果见表1和图3。
(电特性(导通可靠性、绝缘可靠性)评价试验)
使用进行光反射率评价试验时制备的各向异性导电粘合剂，在具有对间距为50μm的铜配线进行镀Ni/Au(5.0μm厚/0.3μm厚)处理而得到的配线的玻璃环氧基板上，在200℃、60秒、1Kg/芯片的条件下倒装芯片安装具有高15μm的金凸块的边长为6mm的试验用IC芯片(导体连接面积/导体-间隔＝1600μm2/50μmp)，得到试验用IC模块(module)。
1.导通可靠性
对所得的试验用IC模块，在低温(-40℃)和高温(100℃)的温度下进行交替地加热、冷却的温度循环试验(TCT)(JIS C5030)，利用4端子法测定初期和500循环后的电阻值。电阻值不足1Ω时评价为“○”，电阻值达到1Ω以上时评价为“×”。所得结果见表1。
2.绝缘可靠性
对于另外制作的试验用IC模块，在85℃、85％RH的环境下进行放置1000小时的老化试验，测定初期和1000小时后的电阻值。电阻值为106Ω以上时评价为“○”，电阻值不足106Ω时评价为“×”。所得结果见表1。
实施例2
除了使用平均粒径为5.0μm的Ni包覆树脂导电颗粒(52NR-4.6EH、日本化学工业(株))代替Au包覆树脂导电颗粒以外，进行与实施例1相同的操作，得到外观色为灰色的光反射性导电颗粒，并进一步得到各向异性导电粘合剂。另外，与实施例1同样地进行光反射率评价试验和电特性(导通可靠性、绝缘可靠性)评价试验。所得结果见表1。
实施例3
将4质量份的平均粒径为0.5μm的氧化钛粉末(KR-380、チタン工业(株))、3质量份的作为粘合剂颗粒的平均粒径为0.2μm的聚苯乙烯(PS)颗粒(グロスデ一ル204S、三井化学(株))和20质量份的平均粒径为5μm的导电颗粒(对平均粒径为4.6μm的球状丙烯酸树脂颗粒施行0.2μm厚的无电解镀金而得到的颗粒；ブライト20GNB4.6EH、日本化学工业(株))投入机械融合装置(AMS-GMP、ホソカワミクロン(株))中，在转速为1000rpm、旋转时间为20分钟的条件下，在导电颗粒的表面形成由苯乙烯和氧化钛颗粒构成的约1μm厚的光反射层的膜，从而得到外观色为灰色的光反射性导电颗粒，并进一步得到各向异性导电粘合剂。另外，与实施例1同样地进行光反射率评价试验和电特性(导通可靠性、绝缘可靠性)评价试验。所得结果见表1。
实施例4
除了使用平均粒径为5.0μm的Ni包覆树脂导电颗粒(52NR-4.6EH、日本化学工业(株))代替Au包覆树脂导电颗粒以外，进行与实施例3相同的操作，得到外观色为灰色的光反射性导电颗粒，并进一步得到各向异性导电粘合剂。并且，与实施例1同样地进行光反射率评价试验和电特性(导通可靠性、绝缘可靠性)评价试验。所得结果见表1。
实施例5
除了使用平均粒径为0.2μm的聚乙烯(PE)颗粒(アミパ一ルWF300、三井化学(株))代替平均粒径为0.2μm的聚苯乙烯颗粒(グロスデ一ル204S、三井化学(株))以外，进行与实施例3相同的操作，得到外观色为灰色的光反射性导电颗粒，并进一步得到各向异性导电粘合剂。另外，与实施例1同样地进行光反射率评价试验和电特性(导通可靠性、绝缘可靠性)评价试验。所得结果见表1。
实施例6
除了使用平均粒径为0.5μm的氧化锌粉末(氧化锌的一种、ハクスイテツク(株))代替平均粒径为0.5μm的氧化钛粉末以外，进行与实施例3相同的操作，得到外观色为灰色的光反射性导电颗粒，并进一步得到各向异性导电粘合剂。另外，与实施例1同样地进行光反射率评价试验和电特性(导通可靠性、绝缘可靠性)评价试验。所得结果见表1。
实施例7
除了使用平均粒径为0.5μm的氧化铝粉末(AE-2500SI、(株)アドマテツクス)代替平均粒径为0.5μm的氧化钛粉末以外，进行与实施例3相同的操作，得到外观色为灰色的光反射性导电颗粒，并进一步得到各向异性导电粘合剂。另外，与实施例1同样地进行光反射率评价试验和电特性(导通可靠性、绝缘可靠性)评价试验。所得结果见表1。
实施例8
除了使用平均粒径为0.5μm的碳酸镁代替平均粒径为0.5μm的氧化钛粉末以外，进行与实施例3相同的操作，得到外观色为灰色的光反射性导电颗粒，并进一步得到各向异性导电粘合剂。另外，与实施例1同样地进行光反射率评价试验和电特性(导通可靠性、绝缘可靠性)评价试验。所得结果见表1。
实施例9
除了使用平均粒径为0.2μm的氧化钛粉末(JR405、テイカ(株))代替平均粒径为0.5μm的氧化钛粉末以外，进行与实施例3相同的操作，得到外观色为灰色的光反射性导电颗粒，并进一步得到各向异性导电粘合剂。另外，与实施例1同样地进行光反射率评价试验和电特性(导通可靠性、绝缘可靠性)评价试验。所得结果见表1。
比较例1
使用外观色为茶色的Au包覆树脂导电颗粒(对平均粒径为4.6μm的球状丙烯酸树脂颗粒施行0.2μm厚的无电解镀金而得到的颗粒ブライト20GNB4.6EH、日本化学工业(株))，与实施例1同样地得到各向异性导电粘合剂。另外，与实施例1同样地进行光反射率评价试验和电特性(导通可靠性、绝缘可靠性)评价试验。所得结果见表1。光反射率也见图3。
比较例2
除了使用外观色为茶色、平均粒径为5.0μm的Ni包覆树脂导电颗粒(52NR-4.6EH、日本化学工业(株))代替Au包覆树脂导电颗粒以外，与比较例1同样地得到各向异性导电粘合剂。另外，与实施例1同样地进行光反射率评价试验和电特性(导通可靠性、绝缘可靠性)评价试验。所得结果见表1。
比较例3
将3质量份的平均粒径为0.2μm的聚苯乙烯系颗粒(グロスデ一ル204S、三井化学(株))和20质量份的平均粒径为5μm的导电颗粒(对平均粒径为4.6μm的球状丙烯酸树脂颗粒施行0.2μm厚的无电解镀金而得到的颗粒：ブライト20GNB4.6EH、日本化学工业(株))投入机械融合装置(AMS-GMP、ホソカワミクロン(株))中，在转速为1000rpm、旋转时间为20分钟的条件下，在导电颗粒的表面形成0.2μm厚的苯乙烯层的膜，得到外观色为茶色的树脂被覆导电颗粒，并进一步得到各向异性导电粘合剂。另外，与实施例1同样地进行光反射率评价试验和电特性(导通可靠性、绝缘可靠性)评价试验。所得结果见表1。
比较例4
除了使用平均粒径为0.5μm的氧化硅粉末(シ一ホスタ一KEP-30、(株)日本触媒)代替平均粒径为0.5μm的氧化钛粉末以外，进行与实施例3相同的操作，得到外观色为茶色的导电颗粒，并进一步得到各向异性导电粘合剂。另外，与实施例1同样地进行光反射率评价试验和电特性(导通可靠性、绝缘可靠性)评价试验。所得结果见表1。
Figure BPA00001545629900161
由表1可知：使用了实施例1～9的光反射性导电颗粒的各向异性导电粘合剂，其光反射率均为30％以上，对于450nm的光以其本来的蓝色进行反射。而且导通可靠性和绝缘可靠性也为良好的结果。
相对于此，在比较例1～3的情况下，由于在导电颗粒的表面未设光反射层，所以光反射率为10％左右；比较例1、2中，自初期起就发生短路；比较例3的情况下，老化后发生短路，在绝缘可靠性上存在问题。比较例4的情况下，由于使用了氧化硅作为无机颗粒，所以在形成无机颗粒层后导电颗粒的颜色仍为茶色，光反射率为10％左右。认为这是由于氧化硅与各向异性导电粘合剂的粘合剂组合物之间的折射率差不足0.02的缘故。
产业实用性
本发明的光反射性导电颗粒，在使用各向异性导电粘合剂在配线板上倒装芯片安装发光二极管(LED)元件等发光元件以制造发光装置时，在发光元件上未设置导致制造成本增加的光反射层的情况下，不会使发光效率降低，而且在发光元件的发光色与反射光色之间不会产生色相差。因此，本发明的各向异性导电粘合剂在倒装芯片安装LED元件时有用。
符号说明
1：芯粒
2：光反射性无机颗粒
3：光反射层
4：热塑性树脂
10、20：光反射性导电颗粒
11：热固化性树脂组合物的固化物
21：基板
22：连接端子
23：LED元件
24：n电极
25：p电极
26：凸块
100：各向异性导电粘合剂的固化物
200：发光装置

Claims (15)

1.光反射性导电颗粒，是用于在配线板上各向异性导电连接发光元件的各向异性导电粘合剂用的光反射性导电颗粒，该光反射性导电颗粒由被金属材料包覆的芯粒、以及在该芯粒表面由折射率为1.52以上的光反射性无机颗粒形成的光反射层构成。
2.权利要求1所述的光反射性导电颗粒，其中，包覆芯粒的金属材料为金、镍或铜。
3.权利要求1所述的光反射性导电颗粒，该芯粒本身为金、镍或铜的颗粒。
4.权利要求1或2所述的光反射性导电颗粒，其中，芯粒是用金、镍或铜包覆树脂颗粒而得到的芯粒。
5.权利要求1～4中任一项所述的光反射性导电颗粒，其中，芯粒的粒径为1～20μm，光反射层的层厚为芯粒粒径的0.5～50％。
6.权利要求1～5中任一项所述的光反射性导电颗粒，其中，光反射性无机颗粒为选自氧化钛颗粒、氧化锌颗粒或氧化铝颗粒的至少一种无机颗粒。
7.权利要求1～6中任一项所述的光反射性导电颗粒，其中，光反射层含有热塑性树脂。
8.权利要求7所述的光反射性导电颗粒，其中，热塑性树脂为聚烯烃。
9.各向异性导电粘合剂，是用于在配线板上各向异性导电连接发光元件的各向异性导电粘合剂，该各向异性导电粘合剂是将权利要求1～8中任一项所述的光反射性导电颗粒分散在热固化性树脂组合物中形成的，所述热固化性树脂组合物提供根据JIS K7105测定的、对于波长380～750nm的可见光光路长1cm的光透过率为80％以上的固化物。
10.权利要求9所述的各向异性导电粘合剂，其中，相对于100质量份热固化性树脂组合物，光反射性导电颗粒的混合量为1～100质量份。
11.权利要求9或10所述的各向异性导电粘合剂，其中，根据JIS K7105测定的、各向异性导电粘合剂的100μm厚的固化物对波长450nm的光的反射率至少为15％。
12.权利要求9～11中任一项所述的各向异性导电粘合剂，其中，热固化性树脂组合物与光反射性无机颗粒间的折射率之差为0.02以上。
13.权利要求9～12中任一项所述的各向异性导电粘合剂，其中，热固化性树脂组合物含有环氧树脂和酸酐系固化剂。
14.发光装置，该发光装置通过权利要求9～13中任一项所述的各向异性导电粘合剂，在配线板上以倒装芯片方式安装有发光元件。
15.权利要求14所述的发光装置，其中，发光元件为发光二极管。
CN201080047702.5A 2009-10-16 2010-07-22 光反射性导电颗粒、各向异性导电粘合剂和发光装置 Active CN102576798B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009239578A JP5526698B2 (ja) 2009-10-16 2009-10-16 光反射性導電粒子、異方性導電接着剤及び発光装置
JP2009-239578 2009-10-16
PCT/JP2010/062307 WO2011045962A1 (ja) 2009-10-16 2010-07-22 光反射性導電粒子、異方性導電接着剤及び発光装置

Publications (2)

Publication Number Publication Date
CN102576798A true CN102576798A (zh) 2012-07-11
CN102576798B CN102576798B (zh) 2016-11-16

Family

ID=43876017

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080047702.5A Active CN102576798B (zh) 2009-10-16 2010-07-22 光反射性导电颗粒、各向异性导电粘合剂和发光装置

Country Status (7)

Country Link
US (2) US8796725B2 (zh)
EP (1) EP2490271A4 (zh)
JP (1) JP5526698B2 (zh)
KR (1) KR20120070537A (zh)
CN (1) CN102576798B (zh)
TW (2) TWI450280B (zh)
WO (1) WO2011045962A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107204395A (zh) * 2016-03-16 2017-09-26 晶元光电股份有限公司 半导体装置及其制造方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5617210B2 (ja) * 2009-09-14 2014-11-05 デクセリアルズ株式会社 光反射性異方性導電接着剤及び発光装置
US20130149514A1 (en) * 2010-07-30 2013-06-13 Kyocera Corporation Insulating sheet, method of manufacturing the same, and method of manufacturing structure using the insulating sheet
CN102468406B (zh) * 2010-11-19 2014-11-05 展晶科技(深圳)有限公司 发光二极管封装结构及其制造方法
JP2012178400A (ja) * 2011-02-25 2012-09-13 Toyoda Gosei Co Ltd Ｌｅｄランプ
JPWO2013042784A1 (ja) * 2011-09-21 2015-03-26 パナソニック株式会社 発光装置
JP5916334B2 (ja) * 2011-10-07 2016-05-11 デクセリアルズ株式会社 異方性導電接着剤及びその製造方法、発光装置及びその製造方法
TW201340422A (zh) * 2012-03-30 2013-10-01 Hon Hai Prec Ind Co Ltd 發光二極體焊接方法
CN103378282A (zh) * 2012-04-27 2013-10-30 展晶科技(深圳)有限公司 发光二极管封装结构的制造方法
JP5958107B2 (ja) * 2012-06-15 2016-07-27 デクセリアルズ株式会社 光反射性異方性導電接着剤及び発光装置
JP6151990B2 (ja) * 2012-07-03 2017-06-21 積水化学工業株式会社 絶縁性粒子付き導電性粒子、導電材料及び接続構造体
AU2013306745A1 (en) * 2012-08-22 2015-03-12 Sumitomo Osaka Cement Co., Ltd. Dye-sensitive solar cell paste, porous light-reflective insulation layer, and dye-sensitive solar cell
US8928014B2 (en) 2013-03-15 2015-01-06 Cooledge Lighting Inc. Stress relief for array-based electronic devices
JP2016111210A (ja) * 2014-12-08 2016-06-20 信越化学工業株式会社 ダイボンド材を用いた導電接続方法及び光半導体装置
KR102618237B1 (ko) * 2016-01-25 2023-12-28 세키스이가가쿠 고교가부시키가이샤 도전 재료 및 접속 구조체
WO2017134282A1 (en) * 2016-02-05 2017-08-10 Technische Universität München Joining of components by means of energetically activated reactive particles
JP6395196B2 (ja) * 2017-07-20 2018-09-26 日本化学工業株式会社 被覆導電性粉体、被覆導電性粉体の製造方法、被覆導電性粉体を含む導電性接着剤及び接着構造体

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04259766A (ja) * 1991-02-14 1992-09-16 Hitachi Chem Co Ltd 回路の接続部材
JP2004179139A (ja) * 2002-09-30 2004-06-24 Sumitomo Osaka Cement Co Ltd 導電性粒子とそれを含有する導電性接着材料及び透明導電膜形成用塗料及びそれを用いた透明導電膜並びに表示装置
CN1809768A (zh) * 2003-06-19 2006-07-26 优泊公司 光反射体及使用该光反射体的面光源装置
JP2007123613A (ja) * 2005-10-28 2007-05-17 Nichia Chem Ind Ltd 発光装置
CN1976079A (zh) * 2005-12-02 2007-06-06 日亚化学工业株式会社 发光装置以及发光装置的制造方法
CN1993635A (zh) * 2004-07-30 2007-07-04 出光兴产株式会社 光反射片及其成型品
CN101084458A (zh) * 2004-12-17 2007-12-05 优泊公司 光反射体及使用该光反射体的面光源装置
CN101241207A (zh) * 2008-03-13 2008-08-13 长兴光学材料（苏州）有限公司 反射膜
WO2009054386A1 (ja) * 2007-10-22 2009-04-30 Nippon Chemical Industrial Co., Ltd. 被覆導電性粉体およびそれを用いた導電性接着剤
CN101467077A (zh) * 2006-06-21 2009-06-24 出光兴产株式会社 光反射用多层片、使用其的反射器、照明装置以及液晶显示装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1120233A (ja) 1997-06-30 1999-01-26 Kyocera Corp 光プリンタヘッド
JPH11168235A (ja) 1997-12-05 1999-06-22 Toyoda Gosei Co Ltd 発光ダイオード
JP3028813B1 (ja) * 1999-06-23 2000-04-04 サンケン電気株式会社 半導体発光装置
JP4480884B2 (ja) 1999-12-22 2010-06-16 三井金属鉱業株式会社 表面修飾銀粉の製造方法
TW557237B (en) 2001-09-14 2003-10-11 Sekisui Chemical Co Ltd Coated conductive particle, coated conductive particle manufacturing method, anisotropic conductive material, and conductive connection structure
JP4222017B2 (ja) 2001-12-18 2009-02-12 日亜化学工業株式会社 発光装置
JP2004266134A (ja) * 2003-03-03 2004-09-24 Kanegafuchi Chem Ind Co Ltd ダイボンディング用樹脂ペースト及びそれを用いた発光ダイオード
JP2005064233A (ja) 2003-08-12 2005-03-10 Stanley Electric Co Ltd 波長変換型ｌｅｄ
JP2008004751A (ja) 2006-06-22 2008-01-10 Sekisui Chem Co Ltd 半導体装置の製造方法
US9024340B2 (en) 2007-11-29 2015-05-05 Nichia Corporation Light emitting apparatus and method for producing the same
JP2011108672A (ja) 2008-02-18 2011-06-02 Koito Mfg Co Ltd 白色発光装置及びこれを用いた車両用灯具

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04259766A (ja) * 1991-02-14 1992-09-16 Hitachi Chem Co Ltd 回路の接続部材
JP2004179139A (ja) * 2002-09-30 2004-06-24 Sumitomo Osaka Cement Co Ltd 導電性粒子とそれを含有する導電性接着材料及び透明導電膜形成用塗料及びそれを用いた透明導電膜並びに表示装置
CN1809768A (zh) * 2003-06-19 2006-07-26 优泊公司 光反射体及使用该光反射体的面光源装置
CN1993635A (zh) * 2004-07-30 2007-07-04 出光兴产株式会社 光反射片及其成型品
CN101084458A (zh) * 2004-12-17 2007-12-05 优泊公司 光反射体及使用该光反射体的面光源装置
JP2007123613A (ja) * 2005-10-28 2007-05-17 Nichia Chem Ind Ltd 発光装置
CN1976079A (zh) * 2005-12-02 2007-06-06 日亚化学工业株式会社 发光装置以及发光装置的制造方法
CN101467077A (zh) * 2006-06-21 2009-06-24 出光兴产株式会社 光反射用多层片、使用其的反射器、照明装置以及液晶显示装置
WO2009054386A1 (ja) * 2007-10-22 2009-04-30 Nippon Chemical Industrial Co., Ltd. 被覆導電性粉体およびそれを用いた導電性接着剤
CN101241207A (zh) * 2008-03-13 2008-08-13 长兴光学材料（苏州）有限公司 反射膜

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107204395A (zh) * 2016-03-16 2017-09-26 晶元光电股份有限公司 半导体装置及其制造方法
CN107204395B (zh) * 2016-03-16 2021-02-05 晶元光电股份有限公司 半导体装置及其制造方法

Also Published As

Publication number Publication date
TWI534839B (zh) 2016-05-21
TW201447922A (zh) 2014-12-16
US9340710B2 (en) 2016-05-17
TW201142876A (en) 2011-12-01
US20140103266A1 (en) 2014-04-17
US8796725B2 (en) 2014-08-05
WO2011045962A1 (ja) 2011-04-21
JP5526698B2 (ja) 2014-06-18
EP2490271A4 (en) 2014-08-06
TWI450280B (zh) 2014-08-21
KR20120070537A (ko) 2012-06-29
CN102576798B (zh) 2016-11-16
US20120175660A1 (en) 2012-07-12
EP2490271A1 (en) 2012-08-22
JP2011086823A (ja) 2011-04-28

Similar Documents

Publication Publication Date Title
CN102576798A (zh) 光反射性导电颗粒、各向异性导电粘合剂和发光装置
CN103403896B (zh) 光反射性各向异性导电粘接剂以及发光装置
CN102823084B (zh) 发光装置的制造方法
TWI520155B (zh) A light reflective anisotropic conductive adhesive and a light emitting device
CN103155128B (zh) 多芯片安装用缓冲膜
CN103415585B (zh) 反光性各向异性导电粘接剂及发光装置
CN102934243B (zh) 光反射性各向异性导电浆料和发光装置
CN106062119B (zh) 各向异性导电粘接剂
KR20150002805A (ko) 이방성 도전 접착제 및 그의 제조 방법, 발광 장치 및 그의 제조 방법
CN102859673B (zh) 光反射性各向异性导电粘接剂及发光装置
US8975654B2 (en) Light-reflective conductive particle, anisotropic conductive adhesive, and light-emitting device
CN103429693A (zh) 光反射性各向异性导电粘接剂和发光装置
CN104736591A (zh) 热固性树脂组合物、光反射性各向异性导电粘接剂及发光装置
JP2014030026A (ja) 異方性導電接着剤及び発光装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: Tokyo, Japan, Japan

Applicant after: Dexerials Corporation

Address before: Tokyo, Japan, Japan

Applicant before: Sony Chemicals & Information Device Co., Ltd.

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: + TO: DEXERIALS ELECTRONIC MATERIAL LTD.

C14 Grant of patent or utility model
GR01 Patent grant