CN101952962A - 凸块下方绕线层方法及设备 - Google Patents

凸块下方绕线层方法及设备 Download PDF

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Publication number
CN101952962A
CN101952962A CN2008801260899A CN200880126089A CN101952962A CN 101952962 A CN101952962 A CN 101952962A CN 2008801260899 A CN2008801260899 A CN 2008801260899A CN 200880126089 A CN200880126089 A CN 200880126089A CN 101952962 A CN101952962 A CN 101952962A
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China
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conductor
redistribution layer
semiconductor chip
forming
conductor structure
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CN2008801260899A
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Chinese (zh)
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N·麦克莱伦
Y·李
R·托帕奇奥
T·蒋
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ATI Technologies ULC
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ATI Technologies ULC
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CN2008801260899A 2007-12-04 2008-12-04 凸块下方绕线层方法及设备 Pending CN101952962A (zh)

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US11/949,951 US20090032941A1 (en) 2007-08-01 2007-12-04 Under Bump Routing Layer Method and Apparatus
US11/949,951 2007-12-04
PCT/IB2008/003343 WO2009071982A2 (en) 2007-12-04 2008-12-04 Under bump routing layer method and apparatus

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103887248A (zh) * 2012-12-21 2014-06-25 比亚迪股份有限公司 一种igbt结构及其制备方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7790501B2 (en) * 2008-07-02 2010-09-07 Ati Technologies Ulc Semiconductor chip passivation structures and methods of making the same
US8278748B2 (en) * 2010-02-17 2012-10-02 Maxim Integrated Products, Inc. Wafer-level packaged device having self-assembled resilient leads
TWI541964B (zh) * 2010-11-23 2016-07-11 矽品精密工業股份有限公司 半導體基板之製法
US20120175772A1 (en) * 2011-01-07 2012-07-12 Leung Andrew K Alternative surface finishes for flip-chip ball grid arrays
US8647974B2 (en) 2011-03-25 2014-02-11 Ati Technologies Ulc Method of fabricating a semiconductor chip with supportive terminal pad
US8564030B2 (en) 2011-06-10 2013-10-22 Advanced Micro Devices Self-aligned trench contact and local interconnect with replacement gate process
US8716124B2 (en) 2011-11-14 2014-05-06 Advanced Micro Devices Trench silicide and gate open with local interconnect with replacement gate process
US9257276B2 (en) * 2011-12-31 2016-02-09 Intel Corporation Organic thin film passivation of metal interconnections
WO2013101243A1 (en) 2011-12-31 2013-07-04 Intel Corporation High density package interconnects
EP2738809A3 (en) * 2012-11-30 2017-05-10 Enpirion, Inc. Semiconductor device including gate drivers around a periphery thereof
GB2520952A (en) 2013-12-04 2015-06-10 Ibm Flip-chip electronic device with carrier having heat dissipation elements free of solder mask
JP6771308B2 (ja) * 2016-05-02 2020-10-21 三菱電機株式会社 回路基板および半導体集積回路の実装構造
DE102018105166B4 (de) * 2017-11-15 2024-01-18 Taiwan Semiconductor Manufacturing Co., Ltd. Zwei vorrichtungen zu einem halbleiter-package und verfahren zur herstellung eines halbleiter-package
WO2019116482A1 (ja) * 2017-12-14 2019-06-20 三菱電機株式会社 半導体装置
US11462513B2 (en) * 2020-12-29 2022-10-04 United Microelectronics Corp. Chip bonding alignment structure, chip bonding structure and methods for fabricating the same

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3593319A (en) * 1968-12-23 1971-07-13 Gen Electric Card-changeable capacitor read-only memory
US4249196A (en) * 1978-08-21 1981-02-03 Burroughs Corporation Integrated circuit module with integral capacitor
JPS56101732A (en) * 1980-01-18 1981-08-14 Matsushita Electric Industrial Co Ltd Metallized film condenser
US4409608A (en) * 1981-04-28 1983-10-11 The United States Of America As Represented By The Secretary Of The Navy Recessed interdigitated integrated capacitor
GB2115223B (en) * 1982-02-18 1985-07-10 Standard Telephones Cables Ltd Multilayer ceramic dielectric capacitors
US4901128A (en) * 1982-11-04 1990-02-13 Hitachi, Ltd. Semiconductor memory
KR900001394B1 (en) * 1985-04-05 1990-03-09 Fujitsu Ltd Super high frequency intergrated circuit device
US4685197A (en) * 1986-01-07 1987-08-11 Texas Instruments Incorporated Fabricating a stacked capacitor
DE3783652T2 (de) * 1986-05-16 1993-06-03 Showa Denko Kk Festelektrolytkondensator.
JPS6370550A (ja) * 1986-09-12 1988-03-30 Nec Corp 半導体集積回路装置
JPH01209746A (ja) * 1988-02-17 1989-08-23 Nec Corp 半導体装置
US4866567A (en) * 1989-01-06 1989-09-12 Ncr Corporation High frequency integrated circuit channel capacitor
US4914546A (en) * 1989-02-03 1990-04-03 Micrel Incorporated Stacked multi-polysilicon layer capacitor
US5053916A (en) * 1989-03-13 1991-10-01 U.S. Philips Corporation Surface-mounted multilayer capacitor and printed circuit board having such a multilayer capacitor
US5089878A (en) * 1989-06-09 1992-02-18 Lee Jaesup N Low impedance packaging
US5081559A (en) * 1991-02-28 1992-01-14 Micron Technology, Inc. Enclosed ferroelectric stacked capacitor
US5189594A (en) * 1991-09-20 1993-02-23 Rohm Co., Ltd. Capacitor in a semiconductor integrated circuit and non-volatile memory using same
US5155658A (en) * 1992-03-05 1992-10-13 Bell Communications Research, Inc. Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films
US5208725A (en) * 1992-08-19 1993-05-04 Akcasu Osman E High capacitance structure in a semiconductor device
JP3057130B2 (ja) * 1993-02-18 2000-06-26 三菱電機株式会社 樹脂封止型半導体パッケージおよびその製造方法
JP3160198B2 (ja) * 1995-02-08 2001-04-23 インターナショナル・ビジネス・マシーンズ・コーポレ−ション デカップリング・コンデンサが形成された半導体基板及びこれの製造方法
US5874782A (en) * 1995-08-24 1999-02-23 International Business Machines Corporation Wafer with elevated contact structures
JP3147162B2 (ja) * 1998-07-13 2001-03-19 日本電気株式会社 フリップチップ集積回路のバンプ配置方法、およびフリップチップ集積回路
JP3530761B2 (ja) * 1999-01-18 2004-05-24 新光電気工業株式会社 半導体装置
US6656828B1 (en) * 1999-01-22 2003-12-02 Hitachi, Ltd. Method of forming bump electrodes
JP4004196B2 (ja) * 1999-11-16 2007-11-07 イビデン株式会社 半導体チップ
JP2001168125A (ja) * 1999-12-03 2001-06-22 Nec Corp 半導体装置
US6387795B1 (en) * 2001-03-22 2002-05-14 Apack Technologies Inc. Wafer-level packaging
US7215022B2 (en) * 2001-06-21 2007-05-08 Ati Technologies Inc. Multi-die module
WO2003012863A1 (fr) * 2001-07-31 2003-02-13 Renesas Technology Corp. Dispositif semi-conducteur et procede de fabrication associe
US6979896B2 (en) * 2001-10-30 2005-12-27 Intel Corporation Power gridding scheme
JP3768433B2 (ja) * 2001-11-19 2006-04-19 株式会社ルネサステクノロジ 半導体装置の設計方法
DE10159466A1 (de) * 2001-12-04 2003-06-12 Koninkl Philips Electronics Nv Anordnung mit Kondensator
JP2004079801A (ja) * 2002-08-19 2004-03-11 Fujitsu Ltd コンデンサ装置及びその製造方法
US7112884B2 (en) * 2002-08-23 2006-09-26 Ati Technologies, Inc. Integrated circuit having memory disposed thereon and method of making thereof
US6861749B2 (en) * 2002-09-20 2005-03-01 Himax Technologies, Inc. Semiconductor device with bump electrodes
US7161793B2 (en) * 2002-11-14 2007-01-09 Fujitsu Limited Layer capacitor element and production process as well as electronic device
JP4571781B2 (ja) * 2003-03-26 2010-10-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7180195B2 (en) * 2003-12-17 2007-02-20 Intel Corporation Method and apparatus for improved power routing
JP4904670B2 (ja) * 2004-06-02 2012-03-28 富士通セミコンダクター株式会社 半導体装置
TWI299248B (en) * 2004-09-09 2008-07-21 Phoenix Prec Technology Corp Method for fabricating conductive bumps of a circuit board
JP4449824B2 (ja) * 2005-06-01 2010-04-14 カシオ計算機株式会社 半導体装置およびその実装構造
US7473999B2 (en) * 2005-09-23 2009-01-06 Megica Corporation Semiconductor chip and process for forming the same
JP4595823B2 (ja) * 2006-01-24 2010-12-08 株式会社デンソー ボールグリッドアレイ
US20070176292A1 (en) * 2006-01-27 2007-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding pad structure
JP5157191B2 (ja) * 2006-03-01 2013-03-06 日立化成株式会社 半導体装置
JP2006203261A (ja) * 2006-04-26 2006-08-03 Renesas Technology Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103887248A (zh) * 2012-12-21 2014-06-25 比亚迪股份有限公司 一种igbt结构及其制备方法

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EP2229694B1 (en) 2017-01-25
JP2013093630A (ja) 2013-05-16
WO2009071982A3 (en) 2009-07-23
EP2229694A2 (en) 2010-09-22
JP5654067B2 (ja) 2015-01-14
JP5567489B2 (ja) 2014-08-06
JP2011505705A (ja) 2011-02-24
US20090032941A1 (en) 2009-02-05
KR20100102635A (ko) 2010-09-24

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