KR20100102635A - 언더 범프 라우팅 층 방법 및 장치 - Google Patents
언더 범프 라우팅 층 방법 및 장치 Download PDFInfo
- Publication number
- KR20100102635A KR20100102635A KR1020107014910A KR20107014910A KR20100102635A KR 20100102635 A KR20100102635 A KR 20100102635A KR 1020107014910 A KR1020107014910 A KR 1020107014910A KR 20107014910 A KR20107014910 A KR 20107014910A KR 20100102635 A KR20100102635 A KR 20100102635A
- Authority
- KR
- South Korea
- Prior art keywords
- conductor
- solder
- site
- redistribution layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/427—Power or ground buses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
- H10W72/01223—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01251—Changing the shapes of bumps
- H10W72/01255—Changing the shapes of bumps by using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/221—Structures or relative sizes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/247—Dispositions of multiple bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/281—Auxiliary members
- H10W72/283—Reinforcing structures, e.g. bump collars
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/853—On the same surface
- H10W72/856—Bump connectors and die-attach connectors
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/949,951 | 2007-12-04 | ||
| US11/949,951 US20090032941A1 (en) | 2007-08-01 | 2007-12-04 | Under Bump Routing Layer Method and Apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20100102635A true KR20100102635A (ko) | 2010-09-24 |
Family
ID=40592064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020107014910A Ceased KR20100102635A (ko) | 2007-12-04 | 2008-12-04 | 언더 범프 라우팅 층 방법 및 장치 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20090032941A1 (enExample) |
| EP (1) | EP2229694B1 (enExample) |
| JP (2) | JP5567489B2 (enExample) |
| KR (1) | KR20100102635A (enExample) |
| CN (1) | CN101952962A (enExample) |
| WO (1) | WO2009071982A2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7790501B2 (en) * | 2008-07-02 | 2010-09-07 | Ati Technologies Ulc | Semiconductor chip passivation structures and methods of making the same |
| US8278748B2 (en) | 2010-02-17 | 2012-10-02 | Maxim Integrated Products, Inc. | Wafer-level packaged device having self-assembled resilient leads |
| TWI541964B (zh) * | 2010-11-23 | 2016-07-11 | 矽品精密工業股份有限公司 | 半導體基板之製法 |
| US20120175772A1 (en) * | 2011-01-07 | 2012-07-12 | Leung Andrew K | Alternative surface finishes for flip-chip ball grid arrays |
| US8647974B2 (en) | 2011-03-25 | 2014-02-11 | Ati Technologies Ulc | Method of fabricating a semiconductor chip with supportive terminal pad |
| US8564030B2 (en) | 2011-06-10 | 2013-10-22 | Advanced Micro Devices | Self-aligned trench contact and local interconnect with replacement gate process |
| US8716124B2 (en) | 2011-11-14 | 2014-05-06 | Advanced Micro Devices | Trench silicide and gate open with local interconnect with replacement gate process |
| US9368437B2 (en) | 2011-12-31 | 2016-06-14 | Intel Corporation | High density package interconnects |
| WO2013101241A1 (en) * | 2011-12-31 | 2013-07-04 | Intel Corporation | Organic thin film passivation of metal interconnections |
| US20140159130A1 (en) * | 2012-11-30 | 2014-06-12 | Enpirion, Inc. | Apparatus including a semiconductor device coupled to a decoupling device |
| CN103887248B (zh) * | 2012-12-21 | 2017-12-12 | 比亚迪股份有限公司 | 一种igbt结构及其制备方法 |
| GB2520952A (en) * | 2013-12-04 | 2015-06-10 | Ibm | Flip-chip electronic device with carrier having heat dissipation elements free of solder mask |
| JP6771308B2 (ja) * | 2016-05-02 | 2020-10-21 | 三菱電機株式会社 | 回路基板および半導体集積回路の実装構造 |
| DE102018105166B4 (de) * | 2017-11-15 | 2024-01-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Zwei vorrichtungen zu einem halbleiter-package und verfahren zur herstellung eines halbleiter-package |
| WO2019116482A1 (ja) * | 2017-12-14 | 2019-06-20 | 三菱電機株式会社 | 半導体装置 |
| CN114695224B (zh) * | 2020-12-29 | 2025-12-23 | 联华电子股份有限公司 | 芯片键合对准结构与键合芯片结构及其制作方法 |
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| US3593319A (en) * | 1968-12-23 | 1971-07-13 | Gen Electric | Card-changeable capacitor read-only memory |
| US4249196A (en) * | 1978-08-21 | 1981-02-03 | Burroughs Corporation | Integrated circuit module with integral capacitor |
| JPS56101732A (en) * | 1980-01-18 | 1981-08-14 | Matsushita Electric Industrial Co Ltd | Metallized film condenser |
| US4409608A (en) * | 1981-04-28 | 1983-10-11 | The United States Of America As Represented By The Secretary Of The Navy | Recessed interdigitated integrated capacitor |
| GB2115223B (en) * | 1982-02-18 | 1985-07-10 | Standard Telephones Cables Ltd | Multilayer ceramic dielectric capacitors |
| US4901128A (en) * | 1982-11-04 | 1990-02-13 | Hitachi, Ltd. | Semiconductor memory |
| KR900001394B1 (en) * | 1985-04-05 | 1990-03-09 | Fujitsu Ltd | Super high frequency intergrated circuit device |
| US4685197A (en) * | 1986-01-07 | 1987-08-11 | Texas Instruments Incorporated | Fabricating a stacked capacitor |
| EP0246808B1 (en) * | 1986-05-16 | 1993-01-20 | Showa Denko Kabushiki Kaisha | Solid electrolytic capacitor |
| JPS6370550A (ja) * | 1986-09-12 | 1988-03-30 | Nec Corp | 半導体集積回路装置 |
| JPH01209746A (ja) * | 1988-02-17 | 1989-08-23 | Nec Corp | 半導体装置 |
| US4866567A (en) * | 1989-01-06 | 1989-09-12 | Ncr Corporation | High frequency integrated circuit channel capacitor |
| US4914546A (en) * | 1989-02-03 | 1990-04-03 | Micrel Incorporated | Stacked multi-polysilicon layer capacitor |
| US5053916A (en) * | 1989-03-13 | 1991-10-01 | U.S. Philips Corporation | Surface-mounted multilayer capacitor and printed circuit board having such a multilayer capacitor |
| US5089878A (en) * | 1989-06-09 | 1992-02-18 | Lee Jaesup N | Low impedance packaging |
| US5081559A (en) * | 1991-02-28 | 1992-01-14 | Micron Technology, Inc. | Enclosed ferroelectric stacked capacitor |
| US5189594A (en) * | 1991-09-20 | 1993-02-23 | Rohm Co., Ltd. | Capacitor in a semiconductor integrated circuit and non-volatile memory using same |
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| JP3057130B2 (ja) * | 1993-02-18 | 2000-06-26 | 三菱電機株式会社 | 樹脂封止型半導体パッケージおよびその製造方法 |
| JP3160198B2 (ja) * | 1995-02-08 | 2001-04-23 | インターナショナル・ビジネス・マシーンズ・コーポレ−ション | デカップリング・コンデンサが形成された半導体基板及びこれの製造方法 |
| US5874782A (en) * | 1995-08-24 | 1999-02-23 | International Business Machines Corporation | Wafer with elevated contact structures |
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| JP3530761B2 (ja) * | 1999-01-18 | 2004-05-24 | 新光電気工業株式会社 | 半導体装置 |
| US6656828B1 (en) * | 1999-01-22 | 2003-12-02 | Hitachi, Ltd. | Method of forming bump electrodes |
| JP4004196B2 (ja) * | 1999-11-16 | 2007-11-07 | イビデン株式会社 | 半導体チップ |
| JP2001168125A (ja) * | 1999-12-03 | 2001-06-22 | Nec Corp | 半導体装置 |
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| JPWO2003012863A1 (ja) * | 2001-07-31 | 2004-12-09 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| US6979896B2 (en) * | 2001-10-30 | 2005-12-27 | Intel Corporation | Power gridding scheme |
| JP3768433B2 (ja) * | 2001-11-19 | 2006-04-19 | 株式会社ルネサステクノロジ | 半導体装置の設計方法 |
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| JP2004079801A (ja) * | 2002-08-19 | 2004-03-11 | Fujitsu Ltd | コンデンサ装置及びその製造方法 |
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| US6861749B2 (en) * | 2002-09-20 | 2005-03-01 | Himax Technologies, Inc. | Semiconductor device with bump electrodes |
| US7161793B2 (en) * | 2002-11-14 | 2007-01-09 | Fujitsu Limited | Layer capacitor element and production process as well as electronic device |
| JP4571781B2 (ja) * | 2003-03-26 | 2010-10-27 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US7180195B2 (en) * | 2003-12-17 | 2007-02-20 | Intel Corporation | Method and apparatus for improved power routing |
| JP4904670B2 (ja) * | 2004-06-02 | 2012-03-28 | 富士通セミコンダクター株式会社 | 半導体装置 |
| TWI299248B (en) * | 2004-09-09 | 2008-07-21 | Phoenix Prec Technology Corp | Method for fabricating conductive bumps of a circuit board |
| JP4449824B2 (ja) * | 2005-06-01 | 2010-04-14 | カシオ計算機株式会社 | 半導体装置およびその実装構造 |
| US7473999B2 (en) * | 2005-09-23 | 2009-01-06 | Megica Corporation | Semiconductor chip and process for forming the same |
| JP4595823B2 (ja) * | 2006-01-24 | 2010-12-08 | 株式会社デンソー | ボールグリッドアレイ |
| US20070176292A1 (en) * | 2006-01-27 | 2007-08-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bonding pad structure |
| JP5157191B2 (ja) * | 2006-03-01 | 2013-03-06 | 日立化成株式会社 | 半導体装置 |
| JP2006203261A (ja) * | 2006-04-26 | 2006-08-03 | Renesas Technology Corp | 半導体装置 |
-
2007
- 2007-12-04 US US11/949,951 patent/US20090032941A1/en not_active Abandoned
-
2008
- 2008-12-04 JP JP2010536543A patent/JP5567489B2/ja not_active Expired - Fee Related
- 2008-12-04 WO PCT/IB2008/003343 patent/WO2009071982A2/en not_active Ceased
- 2008-12-04 EP EP08855955.4A patent/EP2229694B1/en active Active
- 2008-12-04 CN CN2008801260899A patent/CN101952962A/zh active Pending
- 2008-12-04 KR KR1020107014910A patent/KR20100102635A/ko not_active Ceased
-
2013
- 2013-02-19 JP JP2013030065A patent/JP5654067B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20090032941A1 (en) | 2009-02-05 |
| WO2009071982A3 (en) | 2009-07-23 |
| JP2011505705A (ja) | 2011-02-24 |
| JP2013093630A (ja) | 2013-05-16 |
| JP5654067B2 (ja) | 2015-01-14 |
| EP2229694B1 (en) | 2017-01-25 |
| EP2229694A2 (en) | 2010-09-22 |
| CN101952962A (zh) | 2011-01-19 |
| WO2009071982A2 (en) | 2009-06-11 |
| JP5567489B2 (ja) | 2014-08-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
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| D13-X000 | Search requested |
St.27 status event code: A-1-2-D10-D13-srh-X000 |
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| D14-X000 | Search report completed |
St.27 status event code: A-1-2-D10-D14-srh-X000 |
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