CN101933070A - 电路基板用树脂片材、电路基板用片材、及显示器用电路基板 - Google Patents
电路基板用树脂片材、电路基板用片材、及显示器用电路基板 Download PDFInfo
- Publication number
- CN101933070A CN101933070A CN2009801036065A CN200980103606A CN101933070A CN 101933070 A CN101933070 A CN 101933070A CN 2009801036065 A CN2009801036065 A CN 2009801036065A CN 200980103606 A CN200980103606 A CN 200980103606A CN 101933070 A CN101933070 A CN 101933070A
- Authority
- CN
- China
- Prior art keywords
- resin sheet
- circuit board
- methyl
- board use
- circuit substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 105
- 239000011347 resin Substances 0.000 title claims abstract description 105
- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 239000000463 material Substances 0.000 claims description 73
- 238000003860 storage Methods 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000002861 polymer material Substances 0.000 abstract 1
- -1 (methyl) methyl Chemical group 0.000 description 55
- 238000000034 method Methods 0.000 description 43
- CERQOIWHTDAKMF-UHFFFAOYSA-N alpha-methacrylic acid Natural products CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 37
- 239000000126 substance Substances 0.000 description 29
- 239000007787 solid Substances 0.000 description 26
- 239000000470 constituent Substances 0.000 description 21
- 239000000178 monomer Substances 0.000 description 17
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 16
- 229920000058 polyacrylate Polymers 0.000 description 16
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 15
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 13
- 238000009826 distribution Methods 0.000 description 13
- 150000002148 esters Chemical group 0.000 description 13
- 150000005846 sugar alcohols Polymers 0.000 description 13
- 238000000576 coating method Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 239000010419 fine particle Substances 0.000 description 11
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 11
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 239000011651 chromium Substances 0.000 description 10
- 238000004132 cross linking Methods 0.000 description 10
- 239000012530 fluid Substances 0.000 description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 9
- 229910052804 chromium Inorganic materials 0.000 description 9
- 229920001577 copolymer Polymers 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 239000005056 polyisocyanate Substances 0.000 description 8
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 7
- 125000000524 functional group Chemical group 0.000 description 7
- 238000005227 gel permeation chromatography Methods 0.000 description 7
- 229920001228 polyisocyanate Polymers 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 5
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 5
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 5
- 230000033228 biological regulation Effects 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000032050 esterification Effects 0.000 description 5
- 238000005886 esterification reaction Methods 0.000 description 5
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical class C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000004721 Polyphenylene oxide Substances 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 4
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 4
- LFYJSSARVMHQJB-QIXNEVBVSA-N bakuchiol Chemical compound CC(C)=CCC[C@@](C)(C=C)\C=C\C1=CC=C(O)C=C1 LFYJSSARVMHQJB-QIXNEVBVSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- 229920000570 polyether Polymers 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 3
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 3
- 102100026735 Coagulation factor VIII Human genes 0.000 description 3
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 3
- 101000911390 Homo sapiens Coagulation factor VIII Proteins 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical group C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 3
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical group C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000008602 contraction Effects 0.000 description 3
- 125000004386 diacrylate group Chemical group 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 3
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 3
- 229940063557 methacrylate Drugs 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 2
- RTTZISZSHSCFRH-UHFFFAOYSA-N 1,3-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=CC(CN=C=O)=C1 RTTZISZSHSCFRH-UHFFFAOYSA-N 0.000 description 2
- 229940044192 2-hydroxyethyl methacrylate Drugs 0.000 description 2
- PNIGKGOETKVPSH-UHFFFAOYSA-N 2-methylprop-2-enoic acid;propanoic acid Chemical compound CCC(O)=O.CC(=C)C(O)=O PNIGKGOETKVPSH-UHFFFAOYSA-N 0.000 description 2
- 229920005789 ACRONAL® acrylic binder Polymers 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical class NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical class OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-MICDWDOJSA-N Trichloro(2H)methane Chemical compound [2H]C(Cl)(Cl)Cl HEDRZPFGACZZDS-MICDWDOJSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000003556 assay Methods 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 229940106691 bisphenol a Drugs 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- 150000002513 isocyanates Chemical class 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- JNELGWHKGNBSMD-UHFFFAOYSA-N xanthone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3OC2=C1 JNELGWHKGNBSMD-UHFFFAOYSA-N 0.000 description 2
- XKSUVRWJZCEYQQ-UHFFFAOYSA-N 1,1-dimethoxyethylbenzene Chemical compound COC(C)(OC)C1=CC=CC=C1 XKSUVRWJZCEYQQ-UHFFFAOYSA-N 0.000 description 1
- FKTHNVSLHLHISI-UHFFFAOYSA-N 1,2-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=CC=C1CN=C=O FKTHNVSLHLHISI-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- QZKRKMRVWWGTRU-UHFFFAOYSA-N 1,3-dichloro-2-methylanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=C(Cl)C(C)=C(Cl)C=C3C(=O)C2=C1 QZKRKMRVWWGTRU-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- PCPYTNCQOSFKGG-UHFFFAOYSA-N 1-chlorobuta-1,3-diene Chemical compound ClC=CC=C PCPYTNCQOSFKGG-UHFFFAOYSA-N 0.000 description 1
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- GIMQKKFOOYOQGB-UHFFFAOYSA-N 2,2-diethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)(OCC)C(=O)C1=CC=CC=C1 GIMQKKFOOYOQGB-UHFFFAOYSA-N 0.000 description 1
- YRTNMMLRBJMGJJ-UHFFFAOYSA-N 2,2-dimethylpropane-1,3-diol;hexanedioic acid Chemical compound OCC(C)(C)CO.OC(=O)CCCCC(O)=O YRTNMMLRBJMGJJ-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- XOGPDSATLSAZEK-UHFFFAOYSA-N 2-Aminoanthraquinone Chemical class C1=CC=C2C(=O)C3=CC(N)=CC=C3C(=O)C2=C1 XOGPDSATLSAZEK-UHFFFAOYSA-N 0.000 description 1
- DZZAHLOABNWIFA-UHFFFAOYSA-N 2-butoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCCCC)C(=O)C1=CC=CC=C1 DZZAHLOABNWIFA-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- GILMNGUTRWPWSY-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.CC(O)COC(=O)C=C GILMNGUTRWPWSY-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- VUZHZDBMVSHDRE-UHFFFAOYSA-N 3-hydroxypropyl prop-2-enoate;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.OCCCOC(=O)C=C VUZHZDBMVSHDRE-UHFFFAOYSA-N 0.000 description 1
- SXIFAEWFOJETOA-UHFFFAOYSA-N 4-hydroxy-butyl Chemical group [CH2]CCCO SXIFAEWFOJETOA-UHFFFAOYSA-N 0.000 description 1
- DXPPIEDUBFUSEZ-UHFFFAOYSA-N 6-methylheptyl prop-2-enoate Chemical group CC(C)CCCCCOC(=O)C=C DXPPIEDUBFUSEZ-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- QYGNWDWNZBZHMD-UHFFFAOYSA-N CN(C)C(=NO)C(C1=CC=CC=C1)=O Chemical compound CN(C)C(=NO)C(C1=CC=CC=C1)=O QYGNWDWNZBZHMD-UHFFFAOYSA-N 0.000 description 1
- ZNZYKNKBJPZETN-WELNAUFTSA-N Dialdehyde 11678 Chemical class N1C2=CC=CC=C2C2=C1[C@H](C[C@H](/C(=C/O)C(=O)OC)[C@@H](C=C)C=O)NCC2 ZNZYKNKBJPZETN-WELNAUFTSA-N 0.000 description 1
- IAZDPXIOMUYVGZ-WFGJKAKNSA-N Dimethyl sulfoxide Chemical compound [2H]C([2H])([2H])S(=O)C([2H])([2H])[2H] IAZDPXIOMUYVGZ-WFGJKAKNSA-N 0.000 description 1
- 206010013786 Dry skin Diseases 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- GYCMBHHDWRMZGG-UHFFFAOYSA-N Methylacrylonitrile Chemical compound CC(=C)C#N GYCMBHHDWRMZGG-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 240000000528 Ricinus communis Species 0.000 description 1
- 235000004443 Ricinus communis Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004902 Softening Agent Substances 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 238000005937 allylation reaction Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- HIFVAOIJYDXIJG-UHFFFAOYSA-N benzylbenzene;isocyanic acid Chemical class N=C=O.N=C=O.C=1C=CC=CC=1CC1=CC=CC=C1 HIFVAOIJYDXIJG-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- QDVNNDYBCWZVTI-UHFFFAOYSA-N bis[4-(ethylamino)phenyl]methanone Chemical compound C1=CC(NCC)=CC=C1C(=O)C1=CC=C(NCC)C=C1 QDVNNDYBCWZVTI-UHFFFAOYSA-N 0.000 description 1
- OHJMTUPIZMNBFR-UHFFFAOYSA-N biuret Chemical compound NC(=O)NC(N)=O OHJMTUPIZMNBFR-UHFFFAOYSA-N 0.000 description 1
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- HNEGQIOMVPPMNR-IHWYPQMZSA-N citraconic acid Chemical compound OC(=O)C(/C)=C\C(O)=O HNEGQIOMVPPMNR-IHWYPQMZSA-N 0.000 description 1
- 229940018557 citraconic acid Drugs 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 150000001941 cyclopentenes Chemical class 0.000 description 1
- 230000000254 damaging effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- MTZQAGJQAFMTAQ-UHFFFAOYSA-N ethyl benzoate Chemical compound CCOC(=O)C1=CC=CC=C1 MTZQAGJQAFMTAQ-UHFFFAOYSA-N 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229920000578 graft copolymer Polymers 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- ZNAOFAIBVOMLPV-UHFFFAOYSA-N hexadecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCCCOC(=O)C(C)=C ZNAOFAIBVOMLPV-UHFFFAOYSA-N 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 239000004611 light stabiliser Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- UNBDCVXGGDKSCP-UHFFFAOYSA-N methyl 2-methylidenetetradecanoate Chemical compound CCCCCCCCCCCCC(=C)C(=O)OC UNBDCVXGGDKSCP-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- YLGYACDQVQQZSW-UHFFFAOYSA-N n,n-dimethylprop-2-enamide Chemical compound CN(C)C(=O)C=C YLGYACDQVQQZSW-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- GYDSPAVLTMAXHT-UHFFFAOYSA-N pentyl 2-methylprop-2-enoate Chemical compound CCCCCOC(=O)C(C)=C GYDSPAVLTMAXHT-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- ZBVQEUUTPTVMHY-UHFFFAOYSA-N phenyl-(2-phenylphenyl)methanone Chemical compound C=1C=CC=C(C=2C=CC=CC=2)C=1C(=O)C1=CC=CC=C1 ZBVQEUUTPTVMHY-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 125000003367 polycyclic group Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920005906 polyester polyol Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- ATZHWSYYKQKSSY-UHFFFAOYSA-N tetradecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCOC(=O)C(C)=C ATZHWSYYKQKSSY-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 229940124543 ultraviolet light absorber Drugs 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/62—Polymers of compounds having carbon-to-carbon double bonds
- C08G18/6216—Polymers of alpha-beta ethylenically unsaturated carboxylic acids or of derivatives thereof
- C08G18/622—Polymers of esters of alpha-beta ethylenically unsaturated carboxylic acids
- C08G18/6225—Polymers of esters of acrylic or methacrylic acid
- C08G18/6229—Polymers of hydroxy groups containing esters of acrylic or methacrylic acid with aliphatic polyalcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/67—Unsaturated compounds having active hydrogen
- C08G18/671—Unsaturated compounds having only one group containing active hydrogen
- C08G18/672—Esters of acrylic or alkyl acrylic acid having only one group containing active hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
- C08G18/81—Unsaturated isocyanates or isothiocyanates
- C08G18/8108—Unsaturated isocyanates or isothiocyanates having only one isocyanate or isothiocyanate group
- C08G18/8116—Unsaturated isocyanates or isothiocyanates having only one isocyanate or isothiocyanate group esters of acrylic or alkylacrylic acid having only one isocyanate or isothiocyanate group
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D175/00—Coating compositions based on polyureas or polyurethanes; Coating compositions based on derivatives of such polymers
- C09D175/04—Polyurethanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/20—Structure, shape, material or disposition of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01018—Argon [Ar]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01038—Strontium [Sr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0104—Zirconium [Zr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01054—Xenon [Xe]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01056—Barium [Ba]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/22—Nonparticulate element embedded or inlaid in substrate and visible
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24008—Structurally defined web or sheet [e.g., overall dimension, etc.] including fastener for attaching to external surface
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Laminated Bodies (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Polymerisation Methods In General (AREA)
Abstract
本发明涉及为用于嵌入电路芯片的由能量射线固化型高分子材料得到的电路基板用树脂片材、且通过照射能量射线进行固化前的双键浓度为4.5~25mmol/g的电路基板用树脂片材(2);该树脂片材的一面形成于支撑体(1)上的电路基板用片材;及在该电路基板用片材的电路基板用树脂片材面上嵌入电路芯片(3)并照射能量射线使其固化而成的显示器用电路基板(5)。所述电路基板用树脂片材(2)的特征在于,可以适用于高品质、高生产性地有效制作为了控制显示器用特别是平面显示器用的各像素而嵌入电路芯片的电路基板。
Description
技术领域
本发明涉及显示器用的电路基板用树脂片材、电路基板用片材、及显示器用电路基板。更详细的说,本发明涉及用于高品质、高生产性地有效制作为了控制显示器用特别是平面显示器用的各像素而嵌入电路芯片的电路基板的固化物为耐热性优异的电路基板用树脂片材、电路基板用片材以及使用所述电路基板用片材而得到的嵌入电路芯片而成的显示器用电路基板。
背景技术
目前,对于以液晶显示器为代表的平面显示器,例如经过与利用CVD法(化学气相蒸镀法)等在玻璃基板上依次层叠绝缘体、半导体膜等而制作半导体集成电路一样的工序,在构成图像的各像素附近形成膜晶体管(TFT)等微电子元件,由此进行各像素的开、关、浓淡的控制。即,是在玻璃基板上制作膜晶体管等微电子元件的。但是,对于这种技术,工序多且烦杂,免不了成本会变高,另外,如果扩大显示器的面积,则用于在玻璃基板上形成膜的CVD装置等也要大型化,存在成本明显上升等的问题。
因此,以降低成本为目的,公开了以下技术:使微小的晶体硅集成电路芯片像印刷油墨那样附着在印刷原板上,通过印刷技术等手段将其转移到显示器用玻璃基板上的规定地点,使之固定(例如参考专利文献1)。这时,在玻璃基板上预先形成高分子膜,运用印刷技术等手段将微小的晶体硅集成电路芯片转移到膜上,用热成型或热压等方法将该芯片嵌入到高分子膜中。但是,这样的方法不仅容易发生高分子膜变形或起泡等不良情况,而且由于加热耗时长而没有效率。
另外,还公开了一种电路基板用片材,所述电路基板用片材代替所述高分子膜而使用由能量射线固化型高分子材料形成的电路基板用树脂片材,将电路芯片嵌入时及嵌入后各自的储能模量控制在规定的范围,由此即使不进行加热也能嵌入电路芯片(例如参照专利文献2)。
通过使用这样的电路基板用树脂片材,可以高生产性且有效地制作嵌入电路芯片的显示器用电路基板。但是,现有的由能量射线固化型高分子材料形成的树脂片材的固化物在耐热性方面不一定充分满足,存在有时在形成于嵌入电路芯片的该固化物上的配线上产生裂缝等问题。
专利文献1:日本特开2003-248436号公报
专利文献2:日本特开2006-323335号公报
发明内容
发明所要解决的课题
在这种情况下,本发明的目的在于,提供用于高品质、高生产性地有效制作为了控制显示器用特别是平面显示器用的各像素而嵌入电路芯片的电路基板的固化物为耐热性优异的电路基板用树脂片材、电路基板用片材及使用所述电路基板用片材得到的嵌入电路芯片而成的显示器用电路基板。
用于解决课题的手段
本发明人等为了达到上述目的进行了专心研究,结果获知,通过使用由能量射线固化型高分子材料得到的物质作为电路基板用树脂片材,并且使所述树脂片材的由能量射线照射引起的固化前的双键浓度在特定的范围内,可以达到上述目的,基于该见解完成了本发明。
即,本发明提供:
[1]电路基板用树脂片材,其为用于嵌入电路芯片的由能量射线固化型高分子材料得到的电路基板用树脂片材,其特征在于,通过照射能量射线进行固化前的双键浓度为4.5~25mmol/g,
[2]上述[1]所述的电路基板用树脂片材,其中,通过照射能量射线进行固化后,依照JIS K7244-4测定的150℃时的储能模量E′为1.0×108Pa以上,
[3]电路基板用片材,其特征在于,上述[1]或[2]所述的电路基板用树脂片材的一面形成于支撑体上,以及
[4]显示器用电路基板,其特征在于,在上述[3]所述的电路基板用片材的电路基板用树脂片材面上嵌入电路芯片,并照射能量射线使固化。
发明效果
根据本发明,作为用于嵌入电路芯片的由能量射线固化型高分子材料得到的电路基板用树脂片材,通过使用固化前的双键浓度在一定范围的物质,可以得到具有充分的耐热性的嵌入有电路芯片的电路基板。
附图说明
图1(a)~图1(c)是表示利用本发明的电路基板用树脂片材嵌入电路芯片的方法的一例的工序说明图。在图中,符号1表示支撑体,2表示电路基板用树脂片材,3表示电路芯片,4表示剥离片材,5表示显示器用电路基板。
具体实施方式
首先,对本发明的电路基板用树脂片材进行说明。
[电路基板用树脂片材]
本发明的电路基板用树脂片材是用于嵌入电路芯片的由能量射线固化型高分子材料得到的电路基板用树脂片材,其特征在于,通过照射能量射线进行固化前的双键浓度为4.5~25mmol/g。
上述双键浓度不足4.5mmol/g时,该电路基板用树脂片材的固化物的耐热性变得不充分,其结果,有时形成于嵌入电路芯片的电路基板上的配线产生裂缝。另一方面,制作上述双键浓度超过25mmol/g的电路基板用树脂片材时,必须使片材中的作为低分子量成分的单体或寡聚物的量多,固化前的片材容易变形。上述双键浓度优选为5~20mmol/g,更优选为6~15mmol/g。另外,使用本发明的电路基板用树脂片材可以防止配线产生裂缝的理由尚未明确,推测是由于,伴随电路基板用树脂片材的固化物的温度变化(配线形成时在150℃以上,配线形成后降低到室温)的伸缩受到抑制。
另外,上述双键浓度是如下所述测定所得的值。
<双键浓度的测定方法>
电路基板用树脂片材中的双键浓度通过1H~NMR测定来进行。使用六甲基二硅氧烷作为内标物质,称量内标物质及相应的紫外线固化前的电路基板用树脂片材精确至mg单位。使其溶解于氘代氯仿或氘代二甲基亚砜进行1H~NMR测定,从得到的图谱中求出双键的官能团的mmol数。用该值除以电路基板用树脂片材的质量,求出双键浓度(mmol/g)。
在本发明中,上述双键浓度如后面所说明,可以根据能量射线固化型高分子材料中所含的聚合性寡聚物中的多官能聚合寡聚物及聚合性单体中的多官能聚合性单体的种类及量等进行控制。
另外,对于本发明的电路基板用树脂片材,优选通过照射能量射线进行固化后的150℃时的储能模量E′为1.0×108Pa以上。该储能模量E′为1.0×108Pa以上时,该树脂片材的通过照射能量射线进行固化后的耐热性优异,在其表面可以通过例如溅射法等形成配线。
上述150℃时的储能模量E′的上限没有特别限定,通常为1.0×1012Pa左右。更优选的储能模量E′为1.0×108Pa~1.0×109Pa。
上述双键浓度为4.5mmol/g以上时,该储能模量E′通常为1.0×108Pa以上。
另外,上述储能模量E′是如下所述测定所得的值。
<储能模量E′的测定方法>
在照度400mW/cm2、光量300mJ/cm2的条件下在25℃时对电路基板用树脂片材照射以Fusion H bulb作为光源的紫外线,使其固化,然后在初期温度15℃时以升温速度3℃/min使其升温至150℃,利用动态弹性模量测定装置[TA仪器公司制造,型号“DMA Q800”],在频率11Hz时基于JIS K7244-4测定150℃时的储能模量E′。
<能量射线固化型高分子材料>
在本发明中,所谓能量射线固化型高分子材料,是指通过照射电磁波或带电粒子束中具有能量量子的射线即紫外线或电子射线等进行交联的高分子材料。
作为本发明中使用的上述能量射线固化型高分子材料,例如可以举出:(1)含有丙烯酸类聚合物、能量射线固化型聚合性寡聚物及/或聚合性单体、和根据需要添加的光聚合引发剂的高分子材料、(2)含有在侧链具有聚合性不饱和基团的能量射线固化型丙烯酸类聚合物和根据需要添加的光聚合引发剂的高分子材料等。
在上述(1)的高分子材料中,作为丙烯类聚合物,可以优选举出:酯部分的烷基的碳数为1~20的(甲基)丙烯酸酯的聚合物、及(甲基)丙烯酸酯与根据需要使用的包含具有活性氢的官能团的单体及其它单体的共聚物即(甲基)丙烯酸酯类共聚物。在本发明中,所谓“(甲基)丙烯酸......”,是指“丙烯酸......”及“甲基丙烯酸......”二者。
在此,作为酯部分的烷基的碳数为1~20的(甲基)丙烯酸酯的例子,可以举出:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸环己酯、(甲基)丙烯酸-2-乙基己酯、(甲基)丙烯酸异辛酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸硬脂酸酯等。这些酯既可以单独使用,也可以两种以上组合使用。
另一方面,作为根据需要使用的包含具有活性氢的官能团的单体的例子,可以举出:(甲基)丙烯酸-2-羟乙酯、(甲基)丙烯酸-2-羟丙酯、(甲基)丙烯酸-3-羟丙酯、(甲基)丙烯酸-2-羟丁酯、(甲基)丙烯酸-3-羟丁酯、(甲基)丙烯酸-4-羟丁酯等(甲基)丙烯酸羟基烷基酯;(甲基)丙烯酸单甲基氨基乙酯、(甲基)丙烯酸单乙基氨基乙酯、(甲基)丙烯酸单甲基氨基丙酯、(甲基)丙烯酸单乙基氨基丙酯等(甲基)丙烯酸单烷基氨基烷基酯;丙烯酸、甲基丙烯酸、巴豆酸、马来酸、衣康酸、柠康酸等乙烯性不饱和羧酸等。这些单体既可以单独使用,也可以两种以上组合使用。
在(甲基)丙烯酸酯酯类共聚物中,含有5~100质量%、优选50~95质量%(甲基)丙烯酸酯单元,含有0~95质量%、优选5~50质量%包含具有活性氢的官能团的单体单元。
另外,作为根据需要使用的其它单体的例子,可以举出:醋酸乙烯酯、丙酸乙烯酯等乙烯酯类;乙烯、丙烯、异丁烯等烯烃类;氯乙烯、偏氯乙烯等卤化烯烃类;苯乙烯、α-甲基苯乙烯等苯乙烯类单体;丁二烯、异戊二烯、氯丁二烯等二烯类单体;丙烯腈、甲基丙烯腈等腈类单体;丙烯酰胺、N-甲基丙烯酰胺、N,N-二甲基丙烯酰胺等丙烯酰胺类等。这些单体既可以单独使用,也可以两种以上组合使用。(甲基)丙烯酸酯类共聚物中,可以含有0~30质量%这些单体单元。
在该高分子材料中,作为丙烯类聚合物使用的(甲基)丙烯酸酯类共聚物的共聚形态没有特别限定,可以为无规、嵌段、接枝共聚物中的任一种。另外,分子量优选以重均分子量计为30000以上。
另外,上述重均分子量是由凝胶渗透色谱法(GPC)测定的标准聚苯乙烯换算的值。
在本发明中,该(甲基)丙烯酸酯类共聚物既可以单独使用,也可以两种以上组合使用。
另外,作为能量射线固化型聚合性寡聚物,例如可以举出:聚酯丙烯酸酯类、环氧丙烯酸酯类、氨酯丙烯酸酯类、聚醚丙烯酸酯类、聚丁二烯丙烯酸酯类、硅酮丙烯酸酯类、多元醇丙烯酸酯类等。在此,作为聚酯丙烯酸酯类寡聚物,例如可以如下操作来得到:用(甲基)丙烯酸将由多元羧酸与多元醇缩合得到的两末端具有羟基的聚酯寡聚物的羟基酯化而得到、或用(甲基)丙烯酸将在多元羧酸上附加环氧烷烃而得到寡聚物的末端的羟基酯化而得到。环氧丙烯酸酯类寡聚物例如可以通过使较低分子量的双酚型环氧树脂或酚醛清漆型环氧树脂的四氢呋喃环与(甲基)丙烯酸反应进行酯化而得到。另外,还可以使用将该环氧丙烯酸酯类寡聚物用二元酸性羧酸酐进行部分改性而得到的羧基改性型环氧丙烯酸酯寡聚物。氨酯丙烯酸酯类寡聚物例如可以通过用(甲基)丙烯酸将聚醚多元醇或聚酯多元醇与聚异氰酸酯反应得到的聚氨酯寡聚物酯化而得到,多元醇丙烯酸酯类寡聚物可以通过用(甲基)丙烯酸将聚醚多元醇的羟基酯化而得到。
在本发明中,为了使电路基板用树脂片材中的双键浓度及能量射线固化后的该树脂片材的150℃时的储能模量E′在上述规定的范围内,作为上述聚合性寡聚物,优选在侧链具有很多聚合性基团的多支链寡聚物,例如优选多支链多元醇(甲基)丙烯酸酯等。
上述聚合性寡聚物的重均分子量以用GPC法测定的标准聚苯乙烯换算的值计优选为500~100000,更优选为1000~70000,进一步优选在3000~40000的范围。
另外,上述重均分子量是由凝胶渗透色谱法(GPC)测定的聚苯乙烯换算的值,在没有特别说明的情况下,本发明在以下的条件下进行测定。
装置:GPC测定装置[东曹株式会社制、商品名“HLC-8020chromatography”]
色谱柱:[东曹株式会社制、商品名“TSK-GEL GMHXL”(两根)及“TSK-GEL G2000HXL”(一根)]
溶出溶剂:四氢呋喃
浓度1%
注入量:80μl
温度:40℃
流速:1.0ml/分钟
该聚合性寡聚物既可以单独使用,也可以两种以上组合使用。
另一方面,作为能量射线固化型聚合性单体,根据与上述相同的理由,优选多官能性(甲基)丙烯酸酯类。作为该多官能性(甲基)丙烯酸酯类的例子,可以举出:二(甲基)丙烯酸-1,4-丁二醇酯、二(甲基)丙烯酸-1,6-己二醇酯、二(甲基)丙烯酸新戊二醇酯、二(甲基)丙烯酸聚乙二醇酯、二(甲基)丙烯酸新戊二醇己二酸酯、二(甲基)丙烯酸羟基新戊酸新戊二醇酯、二(甲基)丙烯酸二环戊酯、二(甲基)丙烯酸己内酯改性二环戊烯酯、二(甲基)丙烯酸环氧乙烷改性磷酸酯、二(甲基)丙烯酸烯丙基化环己酯、二(甲基)丙烯酸异氰脲酸酯、二羟甲基三环癸烷二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、三(甲基)丙烯酸二季戊四醇酯、三(甲基)丙烯酸丙酸改性二季戊四醇酯、三(甲基)丙烯酸二季戊四醇酯、环氧丙烷改性三羟甲丙烷三(甲基)丙烯酸酯、异氰脲酸三(丙烯酰氧基乙基)酯、五(甲基)丙烯酸丙酸改性二季戊四醇酯、六(甲基)丙烯酸二季戊四醇酯、六(甲基)丙烯酸己内酯改性二季戊四醇酯、己内酯改性三(丙烯酰氧基乙基)异氰脲酸酯、七(甲基)丙烯酸三季戊四醇酯等。这些聚合性单体既可以使用一种,也可以两种以上组合使用。
这些聚合性寡聚物及聚合性单体的使用量以固化前的电路基板用树脂片材中的双键浓度在上述范围内的方式、或优选通过施加能量射线使固化后的电路基板用树脂片材的150℃时的储能模量E′在1.0×108Pa以上的方式选定,通常相对于(甲基)丙烯酸酯类共聚物的固体成分100质量份,可以配合3~400质量份。
另外,作为能量射线,通常照射紫外线或电子射线,在照射紫外线时,可以使用光聚合引发剂。作为该光聚合引发剂,例如可以举出:苯偶姻、苯偶姻甲基醚、苯偶姻乙基醚、苯偶姻异丙基醚、苯偶姻正丁基醚、苯偶姻异丁基醚、苯乙酮、二甲基氨基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二甲氧基-1,2-二苯基乙烷-1-酮、2,2-二乙氧基-2-苯基苯乙酮、2-羟基-2-甲基-1-苯基丙烷-1-酮、1-羟基环己基苯基酮、2-甲基-1-[4-(甲硫基)苯基]-2-吗啉代-丙烷-1-酮、4-(2-羟基乙氧基)苯基-2-(羟基-2-丙基)酮、二苯甲酮、对苯基二苯甲酮、4,4’-二乙基氨基二苯甲酮、二氯代二苯甲酮、2-甲基蒽醌、2-乙基蒽醌、2-叔丁基蒽醌、2-氨基蒽醌、2-甲基硫代呫吨酮、2-乙基硫代呫吨酮、2-氯硫代呫吨酮、2,4-二甲基硫代呫吨酮、2,4-二乙基硫代呫吨酮、苄基二甲基缩酮、苯乙酮二甲基缩酮、对二甲基胺苯甲酸酯、低聚[2-羟基-2-甲基-1-[4-(1-丙烯基)苯基]丙酮]等。这些化合物既可以单独使用,也可以两种以上组合使用。
对于配合量,相对于上述能量射线固化型高分子材料的固体成分100质量份,通常为0.1~10质量份。
其次,在上述(2)的高分子材料中,作为在侧链具有聚合性不饱和基团的能量射线固化型丙烯酸类聚合物,例如可以举出如下的聚合物:在上述(1)的高分子材料中说明的丙烯酸类聚合物的聚合物链上导入-COOH、-NCO、环氧基、-OH、-NH2等活性点,使该活性点和具有聚合性不饱和基团的化合物反应,在该丙烯酸类聚合物的侧链导入具有聚合性不饱和基团的能量射线固化型官能团。
为了在丙烯酸类聚合物中导入上述导入活性点,在制作该丙烯酸类聚合物时,使-COOH、-NCO、环氧基、-OH、-NH2等官能团和具有聚合性不饱和基团的单体或寡聚物在反应体系中共存即可。
具体来说,在制作上述(1)的高分子材料中说明的丙烯酸类聚合物时,导入-COOH基时使用(甲基)丙烯酸等,导入-NCO基时使用2-(甲基)丙烯酰氧基乙基异氰酸酯等,导入环氧基时使用(甲基)丙烯酸缩水甘油酯等,导入-OH基时使用(甲基)丙烯酸-2-羟乙酯、单(甲基)丙烯酸-1,6-己二醇酯等,导入-NH2基时使用N-甲基(甲基)丙烯酰胺等。
作为与这些活性点反应的具有聚合性不饱和基团的化合物,例如可以根据活性点的种类从以下化合物中适当选择使用,所述化合物为:2-(甲基)丙烯酰氧基乙基异氰酸酯、(甲基)丙烯酸缩水甘油酯、单(甲基)丙烯酸季戊四醇酯、单(甲基)丙烯酸二季戊四醇酯、三羟甲基丙烷单(甲基)丙烯酸酯等。
如此,可以得到在丙烯酸类聚合物的侧链上通过上述活性点导入具有聚合性不饱和基团的能量射线固化型官能团而成的丙烯酸类聚合物。
该能量射线固化型丙烯酸类聚合物的重均分子量优选为30000以上,更优选为50000以上。另外,上述重均分子量是由GPC法测定的标准聚苯乙烯换算的值。
另外,作为根据需要使用的光聚合引发剂,可以使用上述(1)的高分子材料的说明中例示的光聚合引发剂。
在本发明中,为了抑制得到的电路基板用树脂片材的通过能量射线进行固化时的体积收缩、且提高耐热性等,可以使该能量射线固化型材料含有无机微粒子。
作为上述无机微粒子,例如可以使用硅、钛、锆、锡、铝、铁等各种金属元素的氧化物或碳化物等,其中,从体积收缩的抑制效果、透光性、经济性等的平衡的观点考虑,优选二氧化硅类微粒子。
在本发明中,该无机微粒子既可以单独使用一种,也可以两种以上组合使用。另外,从透明性、均一分散性、体积收缩的抑制效果等观点考虑,其平均粒径优选在3~50nm的范围,更优选在5~30nm的范围。另外,本发明的平均粒径是基于由BET法得到的值的粒径。
使用二氧化硅类微粒子时,优选二氧化硅类微粒子分散在醇系或溶纤剂等有机溶剂中的有机二氧化硅溶胶。
在本发明中,为了抑制二次凝集而均匀分散在能量射线固化型高分子材料中,该无机微粒子可以使用进行了表面修饰处理的无机微粒子。作为表面修饰处理方法,没有特别限定,可以举出以往公知的方法例如使用有机硅烷化合物的方法及使用表面活性剂的方法等,优选根据无机微粒子的种类和能量射线固化型高分子材料的种类适当选择。例如,使用二氧化硅类微粒子作为无机微粒子时,使用有机硅烷化合物进行表面修饰处理是有利的,使用二氧化硅类微粒子以外的无机微粒子时,使用表面活性剂进行表面修饰是有利的。
在上述(1)及(2)的能量射线固化型高分子材料中,在不损害本发明的效果的范围内,根据需要可以添加交联剂、增粘剂、防氧化剂、紫外线吸收剂、光稳定剂、软化剂等。
作为上述交联剂,例如可以举出:聚异氰酸酯化合物、环氧树脂、三聚氰胺树脂、尿素树脂、双醛类、羟甲基聚合物、氮丙啶类化合物、金属螯合物化合物、金属醇盐、金属盐等。优选使用聚异氰酸酯化合物。该交联剂相对于上述(甲基)丙烯酸酯类共聚物的固体成分100质量份,可以配合0~30质量份。
在此,作为聚异氰酸酯化合物的例子,可以举出:甲苯二异氰酸酯、二苯基甲烷二异氰酸酯、苯二甲基二异氰酸酯等芳香族聚异氰酸酯;六亚甲基二异氰酸酯等脂肪族聚异氰酸酯;异佛尔酮二异氰酸酯、氢化二苯基甲烷二异氰酸酯等脂环式聚异氰酸酯等;及它们的双缩脲体、异氰脲酸酯体、以及乙二醇、丙二醇、新戊二醇、三羟甲基丙烷、蓖麻油等与含有低分子活性氢的化合物的反应物即加合物等。这些交联剂可以单独使用一种,也可以两种以上组合使用。
另外,为了控制电路基板用树脂片材中的双键浓度、及能量射线固化后的该树脂片材的储能模量E′,上述(1)及(2)的能量射线固化型高分子材料可以相对(1)的能量射线固化型高分子材料添加(2)的侧链具有聚合性不饱和基团的能量射线固化型丙烯酸酯类聚合物。同样,也可以相对(2)的能量射线固化型高分子材料,添加(1)的丙烯酸类聚合物、或能量射线固化型聚合性寡聚物或能量射线固化型聚合性单体。
(电路基板用树脂片材的制造方法)
以下,例示制造本发明的电路基板用树脂片材的方法。但是,本发明并不限定于此。
将含有上述能量射线固化型高分子材料的调整到适当浓度的涂布液用公知的方法例如刮涂法、辊涂法、棒涂法、刮刀涂布法、模涂法、凹版涂布法等方法涂布在剥离片材的脱模剂层上并干燥,使其为规定的厚度,由此形成电路基板用树脂片材。为了保管或保护电路基板用树脂片材,上述剥离片材也可以保持层叠的状态。进而,也可以在电路基板用树脂片材的另一面层叠脱模力与上述剥离片材不同的剥离片材,还可以不层叠而直接用于后述的电路基板用片材的制作。
在此,电路基板用树脂片材的厚度也取决于其使用条件,但通常为50~1000μm左右,优选为80~500μm。另外,增厚电路基板用树脂片材的厚度时,可以通过层叠多层由上述电路基板用树脂片材的制造方法制作的树脂层制成规定厚度的电路基板用树脂片材。
作为上述剥离片材,没有特别限定,可以举出在聚乙烯膜或聚丙烯膜等聚烯烃膜、聚对苯二甲酸乙二醇酯等聚酯膜上涂布硅酮树脂等脱模剂而设置脱模剂层的剥离片材等。该剥离片材的厚度通常为20~150μm左右。
[电路基板用片材]
接着对电路基板用片材进行说明。本发明的电路基板用片材包含上述电路基板用树脂片材的一面形成于支撑体上的构成。该电路基板用树脂片材的优选的配合等构成如上所述。
另一方面,对于支撑体,没有特别限定,通常可以从作为显示器用支撑体使用的透明支撑体中选择适当的任意的支撑体。作为这样的支撑体,可以举出玻璃基板、或板状或膜状的塑料支撑体等。作为玻璃基板,可以使用由例如钠钙玻璃、含有钡·锶的玻璃、铝硅酸盐玻璃、铅玻璃、硼硅酸盐玻璃、钡硼硅酸盐玻璃、石英等构成的支撑体。另一方面,作为板状或膜状的塑料支撑体,可以使用例如由聚碳酸酯树脂、丙烯酸树脂、聚对苯二甲酸乙二醇酯树脂、聚醚硫化物树脂、聚砜树脂、聚环烯烃树脂等构成的支撑体。这些支撑体的厚度可以根据用途来适当选择,通常为20μm~5mm左右,优选为50μm~2mm。
(电路基板用片材的制造方法)
制造该电路基板用片材的方法例示于以下。但是,本发明并不限定于此。
作为第1方法,在上述电路基板用树脂片材的两侧层叠剥离片材时,首先,剥离轻脱模型的剥离片材,使所述剥离的面与上述支撑体粘贴,由此制作电路基板用片材。
作为第2方法,用上述方法在剥离片材上制作电路基板用树脂片材,之后直接与支撑体粘贴,由此制作电路基板用片材。
作为第3方法,直接将上述涂布液用公知的方法例如刮涂法、辊涂法、棒涂法、刮刀涂布法、模涂法、凹版涂布法等涂布在上述支撑体上并干燥,使其为规定的厚度,形成电路基板用树脂片材,由此直接制作电路基板用片材。
第1方法优选在使用玻璃基板之类的刚性支撑体时使用,第2、第3方法优选在使用膜状塑料之类的支撑体时使用。
[显示器用电路基板]
本发明的显示器用电路基板可以如下制作:在如上操作得到的电路基板用片材的电路基板用树脂片材面嵌入电路芯片,通过对其照射能量射线照射使其固化,由此制作。
下面对具体的方法进行说明,在剥离片材上等放置被嵌入电路芯片,在其上载置电路基板用片材,以使电路基板用树脂片材面(电路基板用树脂片材和剥离片材粘贴时预先剥离再使用)与该电路芯片连接,在0.05~2.0MPa左右的荷重下在优选0~150℃、更优选5~100℃的温度下嵌入该芯片,照射能量射线使电路基板用树脂片材固化,然后,剥离上述放置有电路芯片的剥离片材,由此得到本发明的显示器用电路基板。另外,在加热嵌入电路芯片时,能量射线的照射既可以在电路基板用树脂片材被加热过的状态下进行,也可以冷却至室温后进行。
作为能量射线,通常使用紫外线或电子射线。紫外线通过高压汞灯、fusion H lamp、氙气灯等得到,另一方面,电子射线通过电子射线加速器等得到。在该能量射线中,紫外线最为合适。作为该能量射线的照射量,以固化后的固化层的储能模量在上述范围的方式适当选择,例如为紫外线时,优选光量在100~5000mJ/cm2,为电子射线时,优选在10~1000krad左右。
图1(a)~图1(c)是表示使用本发明的电路基板用片材嵌入电路芯片的方法的一例的工序说明图。
首先,在支撑体1上,准备由未固化状态的能量射线固化型高分子材料得到的本发明的电路基板用树脂片材2,同时将电路芯片3放在剥离片材4上[(a)]。接着,载置电路基板用树脂片材2以使其与电路芯片3连接,在荷重下嵌入该芯片,照射能量射线使其固化[(b)]。通过此操作,未固化状态的电路基板用树脂片材2成为固化层,在其中嵌入电路芯片3,使其固定,同时,本发明的显示器用电路基板5容易地从剥离片材4中脱模[(c)]。另外,也可以将电路芯片3放置在电路基板用树脂片材2上,同样操作在荷重下进行嵌入。
通过这种方法,不仅加热高分子膜而嵌入电路芯片,而且使用能量射线固化型高分子材料嵌入电路芯片,其后进行固化,使电路芯片固定,因此,不易产生使用高分子膜时的不良情况,并且操作时间也缩短,是有效的方法。
在本发明中,适合于这样的方法,并且可以提供嵌入性也优异的同时具有高的耐热性的嵌入电路芯片的显示器用电路基板。
(配线形成)
由此,嵌入电路芯片的进行固化处理而固定的显示器用电路基板通常在其表面形成配线(电路)。
该配线的形成方法没有特别限定,可以从现有的方法中选择任意的方法实施。例如可以使用光刻技术形成配线。例示其中一例时,在嵌入电路芯片的进行固化处理而成的电路基板用片材上,首先涂布正性或负性的光致抗蚀剂形成光致抗蚀剂层。接着,介由规定的掩模图案,将上述光致抗蚀剂层曝光,然后,使用四甲基氢氧化铵水溶液等碱性显影液进行显影处理,形成抗蚀图。
接着,通过使用例如作为配线材料的铬靶的溅射法等,在上述抗蚀图上形成规定厚度的铬膜,然后将该电路基板用片材浸渍在乙醇等蚀刻液中,进行抗蚀剂的蚀刻,由此可以形成所希望的铬配线。
在本发明中,作为电路基板用树脂片材,使用其固化物的耐热性优异的树脂片材,因此,在配线形成中,可以防止配线产生裂缝等不良情况。
实施例
下面,通过实施例对本发明进行更详细的说明,但本发明并不限定于这些例子。
另外,各例子中的各种特性用以下所示的方法评价。
(1)电路基板用树脂片材的双键浓度
按照说明书正文中记载的方法进行测定。其中,从片材的溶解性方面考虑,作为溶剂,在实施例1~5中使用氘代氯仿,在实施例6~8中使用氘化二甲基亚砜。另外,1H-NMR测定使用Bruker BioSpin公司制“AVANCE500”,在频率500Hz的条件下进行测定。
(2)紫外线固化后的电路基板用树脂片材的150℃时的储能模量E′
按照说明书正文中记载的方法进行测定。
对于紫外线固化,只要没有特别说明,就通过照射以fusion H bulb为光源的紫外线(照度条件:400mW/Gm2、光量条件:300mJ/Gm2)进行未固化层的固化。
(3)紫外线固化后的电路基板用树脂片材的耐热性
在紫外线固化后的电路基板用树脂片材上,使用铬靶通过溅射形成厚度25nm的铬膜(Cr膜)。
溅射使用溅射装置[佳能ANELVA公司制,型号“L-250-S-FH”],在氩气下,以制膜压力1Pa、电力25W进行。
(a)有无裂缝
对铬膜表面的任意10点使用数码显微镜[株式会社KEYENCE制、商品名“数码显微镜VHX-200”]来观察有无裂缝。
评价标准
○:没有发现裂缝。
×:发现裂缝。
(b)对铬膜表面的任意五处测定电阻值,取其平均值作为电阻值。各测定点的2点间距离设定为5cm,测定使用万用表[三菱化学株式会社制、型号“LORESTA MCP-T600”]。
实施例1
相对于重均分子量10万的聚(甲基丙烯酸甲酯)(以下称为PMMA)的固体成分100质量份,使多支链多元醇丙烯酸酯[新中村化学工业株式会社制,商品名“A-HBR-5”,重均分子量:1550]的固体成分200质量份、光聚合引发剂1-羟基环己基苯基酮[千叶特殊化学株式会社制,商品名“IRGACURE 184”,以下设定为光引发剂A。]的固体成分6质量份溶解,最后加入甲乙酮将固体成分浓度调节至50质量%,搅拌至溶液均一,作为涂布液。
将制得的涂布液利用刮刀涂布机涂布在聚对苯二甲酸乙二醇酯的一面设置有硅酮类脱模剂层的重脱模型剥离片材[琳得科株式会社制,商品名“PLR382050*”]的脱模处理面上,以100℃加热干燥90秒,形成厚度50μm的由能量射线固化型高分子材料形成的未固化层。同样操作,在聚对苯二甲酸乙二醇酯的一面设置有硅酮类脱模剂层的轻脱模型剥离片材[琳得科有限公司制,商品名“PET3801”]的脱模处理面上形成厚度50μm的由能量射线固化型高分子材料形成的未固化层。使用层压机将它们层压,由此形成厚度100μm的未固化层,制作电路基板用树脂片材。
对于由此得到的电路基板用树脂片材,求出双键浓度、紫外线固化后的150℃时的储能模量及紫外线固化后的耐热性。结果示于表1中。
实施例2
代替多支链多元醇丙烯酸酯,使用己内酯改性三(丙烯酰氧基乙基)异氰脲酸酯[新中村化学工业株式会社制,商品名“NK Ester9300-1CL”],除此以外,与实施例1同样操作,制作电路基板用树脂片材。
对于由此得到的电路基板用树脂片材,求出双键浓度、紫外线固化后的150℃时的储能模量及紫外线固化后的耐热性。结果示于表1中。
实施例3
代替多支链多元醇丙烯酸酯,使用二羟甲基三环癸烷二丙烯酸酯[新中村化学工业株式会社制,商品名“A-DCP”],除此以外,与实施例1同样操作,制作电路基板用树脂片材。
对于由此得到的电路基板用树脂片材,求出双键浓度、紫外线固化后的150℃时的储能模量及紫外线固化后的耐热性。结果示于表1中。
实施例4
代替多支链多元醇丙烯酸酯,使用二羟甲基三环癸烷二丙烯酸酯[新中村化学工业株式会社制,商品名“A-DCP”]的固体成分150质量份和双酚A型环氧丙烯酸酯[共荣社化学株式会社制,商品名“EPOXYESTER 3002A”]的固体成分50质量份的混合物,除此以外,与实施例1同样操作,制作电路基板用树脂片材。
对于由此得到的电路基板用树脂片材,求出双键浓度、紫外线固化后的150℃时的储能模量及紫外线固化后的耐热性。结果示于表1中。
实施例5
代替多支链多元醇丙烯酸酯,使用三(丙烯酰氧基乙基)异氰脲酸酯[东亚合成株式会社制,商品名“ARONIX M-315”],除此以外,与实施例1同样操作,制作电路基板用树脂片材。
对于由此得到的电路基板用树脂片材,求出双键浓度、紫外线固化后的150℃时的储能模量及紫外线固化后的耐热性。结果示于表1中。
实施例6
在由甲基丙烯酸甲酯(以下称为MMA)75质量份和甲基丙烯酸-2-羟乙酯(以下称为HEMA)25质量份构成的甲基丙烯酸酯共聚物的甲乙酮溶液(固体成分浓度35质量%)中添加相对于共聚物中的HEMA 100当量为80当量的2-甲基丙烯酰氧基乙基异氰酸酯,在氮气氛围中、在40℃时反应48小时,得到在侧链具有聚合性不饱和基团的重均分子量15万的能量射线固化型丙烯酸类聚合物。相对于得到的能量射线固化型丙烯酸类共聚物的固体成分100质量份,添加多支链多元醇丙烯酸酯[上述新中村化学工业株式会社制,商品名“A-HBR-5”]的固体成分200质量份、作为光聚合引发剂的2,2-二甲氧基-1,2-二苯基乙烷-1-酮[千叶特殊化学株式会社制,商品名“IRGACURE 651”、以下称为光引发剂B]的固体成分6质量份、及由聚异氰酸酯化合物构成的交联剂[三井化学聚氨酯株式会社制,商品名“TAKENATE D-140N”、以下称为交联剂a]的固体成分1.5质量份,进而添加甲乙酮,得到固体成分浓度40质量%的涂布液。使用该涂布液,除此以外,与实施例1同样操作,制作电路基板用树脂片材。
对于由此得到的电路基板用树脂片材,求出双键浓度、紫外线固化后的150℃时的储能模量及紫外线固化后的耐热性。结果示于表1中。
实施例7
相对于实施例6的甲基丙烯酸酯共聚物的甲乙酮溶液的固体成分100质量份,添加多支链多元醇丙烯酸酯[上述商品名“A-HBR-5”]的固体成分200质量份、光引发剂B的固体成分6质量份、及交联剂a的固体成分1.5质量份,进而添加甲乙酮,得到固体成分浓度40质量%的涂布液。使用得到的涂布液,除此以外,与实施例1同样操作,制作电路基板用树脂片材。
对于由此得到的电路基板用树脂片材,求出双键浓度、紫外线固化后的150℃时的储能模量及紫外线固化后的耐热性。结果示于表1中。
实施例8
在由丙烯酸丁酯25质量份、甲基丙烯酸酯50质量份和丙烯酸-2-羟乙酯(以下称为HEA)25质量份构成的(甲基)丙烯酸酯类共聚物的甲乙酮溶液(固体成分浓度40质量%)中添加相对于共聚物中的HEA 100当量为80当量的2-甲基丙烯酰氧基乙基异氰酸酯,在氮气氛围中、在40℃时反应48小时,得到在侧链具有聚合性不饱和基团的重均分子量25万的能量射线固化型丙烯酸类聚合物。相对于得到的能量射线固化型丙烯酸类聚合物的固体成分100质量份,添加多支链多元醇丙烯酸酯[上述新中村化学工业株式会社制,商品名“A-HBR-5”]的固体成分200质量份、作为光聚合引发剂A的固体成分6质量份、及交联剂a的固体成分1.8质量份,进而添加甲乙酮,得到固体成分40质量%的涂布液。使用该涂布液,除此以外,与实施例1同样操作,制作电路基板用树脂片材。
对于由此得到的电路基板用树脂片材,求出双键浓度、紫外线固化后的150℃时的储能模量及紫外线固化后的耐热性。结果示于表1中。
比较例1
代替多支链多元醇丙烯酸酯,使用聚碳酸酯骨架氨酯丙烯酸酯[日本合成化学工业株式会社制,商品名“UV-6010EA”、重均分子量:1500],除此以外,与实施例1同样操作,形成未固化层。
对于由此得到的电路基板用树脂片材,求出双键浓度、紫外线固化后的150℃时的储能模量及紫外线固化后的耐热性。结果示于表1中。
比较例2
代替多支链多元醇丙烯酸酯,使用聚碳酸酯骨架氨酯丙烯酸酯[日本合成化学工业株式会社制,商品名“UV-6020EA”、重均分子量:1560],除此以外,与实施例1同样操作,形成未固化层。
对于由此得到的电路基板用树脂片材,求出双键浓度、紫外线固化后的150℃时的储能模量及紫外线固化后的耐热性。结果示于表1中。
表1
(主剂的种类的比例为质量比。)
[注]
PMMA:聚(甲基丙烯酸甲酯)
MMA:甲基丙烯酸甲酯
BA:丙烯酸丁酯
HEMA:甲基丙烯酸-2-羟乙酯
HEA:丙烯酸-2-羟乙酯
MOI:2-甲基丙烯酰氧基乙基异氰酸酯
A-HBR-5:多支链多元醇丙烯酸酯[新中村化学工业株式会社制,商品名“A-HBR-5”]
9300-1CL:己内酯改性三(丙烯酰氧基乙基)异氰脲酸酯[新中村化学工业株式会社制,商品名“NK Ester 9300-1CL”]
A-DCP:二羟甲基三环癸烷二丙烯酸酯[新中村化学工业株式会社制,商品名“A-DCP”]
3002A:双酚A型环氧丙烯酸酯[共荣社化学株式会社制,商品名“EPOXYESTER 3002A”]
M-315:三(丙烯酰氧基乙基)异氰脲酸酯[东亚合成株式会社制,商品名“ARONIX M-315”]
UV-6010EA:聚碳酸酯骨架氨酯丙烯酸酯[日本合成化学工业有限公司、商品名“UV-6010EA”]
UV-6020EA:聚碳酸酯骨架氨酯丙烯酸酯[日本合成化学工业株式会社制、商品名“UV-6020EA”]
光引发剂A:1-羟基环己基苯基酮[千叶特殊化学株式会社制、商品名“Irgacure184”]
光引发剂B:2,2-甲氧基-1,2-二苯基乙烷-1-酮[千叶特殊化学株式会社制、商品名“IRGACURE 651”]
交联剂a:聚异氰酸酯类交联剂[三井化学聚氨酯株式会社、商品名“TAKENATE D-140N”]
从表1可知,双键浓度超过4.5mmol/g的实施例1~8中,能量射线固化后的150℃时的储能模量E′均超过1.0×108Pa,铬膜上没有发现裂缝,电阻值低。
相对于此,双键浓度不足4.5mmol/g的比较例1~2中,能量射线固化后的150℃时的储能模量E′均不足1.0×108Pa,铬膜上产生裂缝,电阻值高。
产业上的可利用性
本发明的电路基板用树脂片材的固化物的耐热性优异,可以高品质、高生产性地有效提供为了控制显示器用特别是平面显示器用的各像素而嵌入电路芯片的电路基板。
Claims (4)
1.电路基板用树脂片材,其为用于嵌入电路芯片的由能量射线固化型高分子材料得到的电路基板用树脂片材,其特征在于,通过照射能量射线进行的固化前的双键浓度为4.5~25mmol/g。
2.如权利要求1所述的电路基板用树脂片材,其中,通过照射能量射线进行的固化后,依照JIS K7244-4测定的150℃时的储能模量E′为1.0×108Pa以上。
3.电路基板用片材,其特征在于,权利要求1或2所述的电路基板用树脂片材的一面形成于支撑体上。
4.显示器用电路基板,其特征在于,在权利要求3所述的电路基板用片材的电路基板用树脂片材面上嵌入电路芯片,照射能量射线使固化。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008018903A JP5063389B2 (ja) | 2008-01-30 | 2008-01-30 | 回路基板用樹脂シート、回路基板用シート、及びディスプレイ用回路基板 |
JP2008-018903 | 2008-01-30 | ||
PCT/JP2009/051830 WO2009096593A1 (ja) | 2008-01-30 | 2009-01-28 | 回路基板用樹脂シート、回路基板用シート、及びディスプレイ用回路基板 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101933070A true CN101933070A (zh) | 2010-12-29 |
Family
ID=40912931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009801036065A Pending CN101933070A (zh) | 2008-01-30 | 2009-01-28 | 电路基板用树脂片材、电路基板用片材、及显示器用电路基板 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8445092B2 (zh) |
JP (1) | JP5063389B2 (zh) |
KR (1) | KR20100122076A (zh) |
CN (1) | CN101933070A (zh) |
TW (1) | TW200941071A (zh) |
WO (1) | WO2009096593A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017124332A1 (en) * | 2016-01-20 | 2017-07-27 | Goertek.Inc | Micro-led transfer method and manufacturing method |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10395954B2 (en) * | 2014-11-05 | 2019-08-27 | Ev Group E. Thallner Gmbh | Method and device for coating a product substrate |
EP3373712B1 (fr) * | 2017-03-09 | 2023-03-29 | MGI Digital Technology | Procédé de dépôt de traces conductrices |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6262422A (ja) * | 1985-09-13 | 1987-03-19 | Sony Corp | 磁気記録媒体 |
US5118771A (en) | 1986-03-07 | 1992-06-02 | Matsushita Electric Industrial Co., Ltd. | Erasable optical disk having an improved optically transparent substrate |
US4794133A (en) | 1988-01-04 | 1988-12-27 | Desoto, Inc. | Acrylated polyurethanes based on polyoxytetramethylene glycols extended with ethylenically unsaturated dicarboxylic acids |
CA2038117A1 (en) | 1990-03-29 | 1991-09-30 | Mahfuza B. Ali | Controllable radiation curable photoiniferter prepared adhesives for attachment of microelectronic devices and a method of attaching microelectronic devices therewith |
EP0509534B1 (en) * | 1991-04-17 | 1997-03-05 | AG-TECHNOLOGY Co., Ltd. | Liquid crystal optical element, liquid crystal display element and a projection type liquid crystal display apparatus using such element |
JP3388674B2 (ja) | 1996-04-19 | 2003-03-24 | リンテック株式会社 | エネルギー線硬化型感圧接着剤組成物およびその利用方法 |
TW430672B (en) | 1997-07-03 | 2001-04-21 | Sumitomo Chemical Co | A photo-curing resin composition for DVD |
JP2001026759A (ja) | 1999-04-28 | 2001-01-30 | Bridgestone Corp | 光学機能部材一体型表示装置用接着剤組成物、接着剤フィルム、接着剤フィルム積層体、光学機能部材一体型表示装置及びその製造方法 |
KR100711423B1 (ko) * | 2000-03-14 | 2007-05-02 | 린텍 가부시키가이샤 | 점착제 조성물, 그것을 사용한 점착시트 및 점착성 광학부재 |
US7268171B2 (en) | 2000-04-27 | 2007-09-11 | Dainippon Ink And Chemicals, Inc. | Water-based coating composition curable with actinic energy ray, coated metallic material with cured film of the composition, production process, and method of bonding coated metallic material |
US6472065B1 (en) * | 2000-07-13 | 2002-10-29 | 3M Innovative Properties Company | Clear adhesive sheet |
JP2002214588A (ja) * | 2001-01-15 | 2002-07-31 | Seiko Epson Corp | 電気光学装置とその製造方法 |
JP3733418B2 (ja) * | 2001-04-16 | 2006-01-11 | シャープ株式会社 | 粘接着シート、積層シート及び液晶表示装置 |
JP2002344011A (ja) | 2001-05-15 | 2002-11-29 | Sony Corp | 表示素子及びこれを用いた表示装置 |
JP3696131B2 (ja) * | 2001-07-10 | 2005-09-14 | 株式会社東芝 | アクティブマトリクス基板及びその製造方法 |
JP2003103696A (ja) | 2001-09-27 | 2003-04-09 | Hitachi Chem Co Ltd | 凹凸を形成するための版、その製造方法、それを用いた電磁波シールド材料、その製造方法、並びにその電磁波シールド材料を用いた電磁波遮蔽構成体及び電磁波シールドディスプレイ |
JP4359411B2 (ja) | 2001-10-09 | 2009-11-04 | リンテック株式会社 | 光ディスク製造用シート |
JP4002746B2 (ja) | 2001-10-23 | 2007-11-07 | 株式会社小糸製作所 | 不飽和ポリエステル樹脂組成物およびその硬化物、ならびにランプ反射鏡基体 |
TW578222B (en) | 2002-01-11 | 2004-03-01 | Mitsui Chemicals Inc | Semiconductor wafer surface protective adhesive tape and backside process method of semiconductor wafer using the same |
JP2003207764A (ja) | 2002-01-16 | 2003-07-25 | Sumitomo Bakelite Co Ltd | 表示素子用プラスチック基板および液晶表示装置 |
JP4008246B2 (ja) | 2002-01-28 | 2007-11-14 | 住友ベークライト株式会社 | 複合体組成物、及びこれを架橋させてなる成形硬化物 |
JP2003248436A (ja) | 2002-02-27 | 2003-09-05 | Ishikawa Seisakusho Ltd | 大画面平面ディスプレイ装置並びにその製造方法及び製造装置 |
KR100922541B1 (ko) | 2002-06-14 | 2009-10-21 | 디아이씨 가부시끼가이샤 | 액정 패널 봉지용 광경화성 조성물 및 액정 패널 |
US7239999B2 (en) * | 2002-07-23 | 2007-07-03 | Intel Corporation | Speed control playback of parametric speech encoded digital audio |
JP4333100B2 (ja) * | 2002-08-20 | 2009-09-16 | 東亞合成株式会社 | 活性エネルギー線硬化型粘着剤及び粘着シート |
WO2004047057A1 (ja) | 2002-11-19 | 2004-06-03 | Ishikawa Seisakusho,Ltd. | 画素制御素子の選択転写方法、画素制御素子の選択転写方法に使用される画素制御素子の実装装置、画素制御素子転写後の配線形成方法、及び、平面ディスプレイ基板 |
JP3474187B1 (ja) | 2002-11-19 | 2003-12-08 | 英樹 松村 | 画素制御素子の選択転写方法、及び、画素制御素子の選択転写方法に使用される画素制御素子の実装装置 |
JP2004319976A (ja) | 2003-03-28 | 2004-11-11 | Matsushita Electric Ind Co Ltd | 転写シート及びそれを用いた配線基板とその製造方法 |
US7001662B2 (en) * | 2003-03-28 | 2006-02-21 | Matsushita Electric Industrial Co., Ltd. | Transfer sheet and wiring board using the same, and method of manufacturing the same |
JP2005135995A (ja) | 2003-10-28 | 2005-05-26 | Matsushita Electric Works Ltd | 回路部品内蔵モジュール、回路部品内蔵モジュールの製造方法、および多層構造回路部品内蔵モジュール、多層構造回路部品内蔵モジュールの製造方法 |
JP4875340B2 (ja) * | 2004-10-06 | 2012-02-15 | リンテック株式会社 | ディスプレイ用の回路基板シートの製造方法及び該製造方法に用いる回路基板用シート |
US20060082002A1 (en) | 2004-10-06 | 2006-04-20 | Lintec Corporation | Sheet for circuit substrates and sheet of a circuit substrate for displays |
US7737538B2 (en) | 2007-11-08 | 2010-06-15 | Visera Technologies Company Limited | Semiconductor package |
-
2008
- 2008-01-30 JP JP2008018903A patent/JP5063389B2/ja not_active Expired - Fee Related
-
2009
- 2009-01-23 TW TW098102702A patent/TW200941071A/zh unknown
- 2009-01-28 CN CN2009801036065A patent/CN101933070A/zh active Pending
- 2009-01-28 KR KR1020107016581A patent/KR20100122076A/ko not_active Application Discontinuation
- 2009-01-28 US US12/812,932 patent/US8445092B2/en not_active Expired - Fee Related
- 2009-01-28 WO PCT/JP2009/051830 patent/WO2009096593A1/ja active Application Filing
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017124332A1 (en) * | 2016-01-20 | 2017-07-27 | Goertek.Inc | Micro-led transfer method and manufacturing method |
CN108463891A (zh) * | 2016-01-20 | 2018-08-28 | 歌尔股份有限公司 | 微发光二极管转移方法及制造方法 |
US10586886B2 (en) | 2016-01-20 | 2020-03-10 | Goertek, Inc. | Micro-LED transfer method and manufacturing method |
CN108463891B (zh) * | 2016-01-20 | 2020-09-22 | 歌尔股份有限公司 | 微发光二极管转移方法及制造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200941071A (en) | 2009-10-01 |
JP5063389B2 (ja) | 2012-10-31 |
US20110048779A1 (en) | 2011-03-03 |
WO2009096593A1 (ja) | 2009-08-06 |
JP2009180880A (ja) | 2009-08-13 |
US8445092B2 (en) | 2013-05-21 |
KR20100122076A (ko) | 2010-11-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101552739B1 (ko) | 하드코팅 형성용 시트 | |
JP6011529B2 (ja) | インモールド成形用転写フィルムおよびその製造方法 | |
KR101552740B1 (ko) | 하드코팅 형성 방법 | |
US20210139719A1 (en) | Energy cured heat activated ink jet adhesives for foiling applications | |
TWI569096B (zh) | 活性能量線硬化型空隙填充用薄膜及其製造方法 | |
TWI586777B (zh) | Production method of active energy ray hardening type adhesive preparation and laminate | |
KR20110077839A (ko) | 이형필름 및 이의 제조방법 | |
KR20150013355A (ko) | (메타)아크릴레이트 화합물, 이를 함유하는 수지 조성물, 그 경화물 및 광학 렌즈 시트용 에너지선 경화형 수지 조성물 및 그 경화물 | |
TW201209518A (en) | Photosensitive resin composition and display unit | |
TW201100516A (en) | Adhesive composition curable by high energy beam for use with hydrophilic plastic | |
CN1825572B (zh) | 用于电路基板的薄板以及用于显示器的电路基板的薄板 | |
CN101933070A (zh) | 电路基板用树脂片材、电路基板用片材、及显示器用电路基板 | |
JP5057809B2 (ja) | 樹脂基板の連続的製造方法 | |
CN101589655B (zh) | 电路基板的制造方法及电路基板 | |
JP6658544B2 (ja) | 樹脂シートの製造方法 | |
JP2001226449A (ja) | 液晶スペーサー用感光性樹脂および感光性樹脂組成物 | |
JP2003161802A (ja) | 光硬化性樹脂組成物、シート、転写箔、微細凹凸パターン形成方法、及び光学用物品 | |
JP3593066B2 (ja) | 液晶スペーサー用感光性樹脂および感光性樹脂組成物 | |
JP2006159651A (ja) | 多層フィルムおよびその製造方法 | |
JP6416176B2 (ja) | 印刷可能な機能性ハードコートフィルムおよびその製造方法 | |
JP4092812B2 (ja) | シート状光学物品用活性エネルギー線硬化型組成物 | |
JP2007171375A (ja) | ディスプレイ用回路基板及び粘着剤シート | |
WO2007111172A1 (ja) | 樹脂基板の連続的製造方法及び樹脂基板 | |
CN101433133A (zh) | 电路基板的制造方法及采用该方法制得的电路基板 | |
JP2006346884A (ja) | 水圧転写フィルム及び水圧転写体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20101229 |