CN101910475B - 具有改善的厚度均匀性的外延筒形基座 - Google Patents
具有改善的厚度均匀性的外延筒形基座 Download PDFInfo
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- CN101910475B CN101910475B CN200880122656.3A CN200880122656A CN101910475B CN 101910475 B CN101910475 B CN 101910475B CN 200880122656 A CN200880122656 A CN 200880122656A CN 101910475 B CN101910475 B CN 101910475B
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- China
- Prior art keywords
- depression
- wafer
- pedestal
- front surface
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/965,521 US8404049B2 (en) | 2007-12-27 | 2007-12-27 | Epitaxial barrel susceptor having improved thickness uniformity |
US11/965,521 | 2007-12-27 | ||
PCT/US2008/087930 WO2009086259A1 (en) | 2007-12-27 | 2008-12-22 | Epitaxial barrel susceptor having improved thickness uniformity |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101910475A CN101910475A (zh) | 2010-12-08 |
CN101910475B true CN101910475B (zh) | 2013-06-12 |
Family
ID=40350145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200880122656.3A Active CN101910475B (zh) | 2007-12-27 | 2008-12-22 | 具有改善的厚度均匀性的外延筒形基座 |
Country Status (9)
Country | Link |
---|---|
US (1) | US8404049B2 (zh) |
EP (1) | EP2222901B1 (zh) |
JP (1) | JP5237390B2 (zh) |
KR (1) | KR101478863B1 (zh) |
CN (1) | CN101910475B (zh) |
AT (1) | ATE529544T1 (zh) |
MY (1) | MY160289A (zh) |
TW (1) | TWI416650B (zh) |
WO (1) | WO2009086259A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201122148A (en) * | 2009-12-24 | 2011-07-01 | Hon Hai Prec Ind Co Ltd | Chemical vapor deposition device |
US9441295B2 (en) * | 2010-05-14 | 2016-09-13 | Solarcity Corporation | Multi-channel gas-delivery system |
CN205845916U (zh) * | 2013-07-09 | 2016-12-28 | 应用材料公司 | 用于处理基板的设备 |
US20170221751A1 (en) * | 2014-08-22 | 2017-08-03 | Applied Materials, Inc. | High speed epitaxy system and methods |
US10184193B2 (en) | 2015-05-18 | 2019-01-22 | Globalwafers Co., Ltd. | Epitaxy reactor and susceptor system for improved epitaxial wafer flatness |
US9972740B2 (en) | 2015-06-07 | 2018-05-15 | Tesla, Inc. | Chemical vapor deposition tool and process for fabrication of photovoltaic structures |
KR101825469B1 (ko) | 2015-12-23 | 2018-02-05 | 희성촉매 주식회사 | 압축천연가스 연소시스템 배기가스 산화촉매 |
US9748434B1 (en) | 2016-05-24 | 2017-08-29 | Tesla, Inc. | Systems, method and apparatus for curing conductive paste |
US9954136B2 (en) | 2016-08-03 | 2018-04-24 | Tesla, Inc. | Cassette optimized for an inline annealing system |
US10115856B2 (en) | 2016-10-31 | 2018-10-30 | Tesla, Inc. | System and method for curing conductive paste using induction heating |
CN106906455A (zh) * | 2017-03-30 | 2017-06-30 | 河北普兴电子科技股份有限公司 | 硅外延反应腔用梯形基座 |
EP3581269B1 (en) | 2017-04-11 | 2022-09-28 | Cataler Corporation | Catalyst for exhaust gas purification and method of preparation |
Citations (1)
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---|---|---|---|---|
TW391999B (en) * | 1996-09-10 | 2000-06-01 | Shinetsu Handotai Kk | A susceptor for a gas phase growth apparatus |
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-
2007
- 2007-12-27 US US11/965,521 patent/US8404049B2/en active Active
-
2008
- 2008-12-22 WO PCT/US2008/087930 patent/WO2009086259A1/en active Application Filing
- 2008-12-22 AT AT08866204T patent/ATE529544T1/de not_active IP Right Cessation
- 2008-12-22 JP JP2010540824A patent/JP5237390B2/ja active Active
- 2008-12-22 EP EP08866204A patent/EP2222901B1/en active Active
- 2008-12-22 CN CN200880122656.3A patent/CN101910475B/zh active Active
- 2008-12-22 KR KR20107014189A patent/KR101478863B1/ko active IP Right Grant
- 2008-12-22 MY MYPI2010002351A patent/MY160289A/en unknown
- 2008-12-26 TW TW097151004A patent/TWI416650B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW391999B (en) * | 1996-09-10 | 2000-06-01 | Shinetsu Handotai Kk | A susceptor for a gas phase growth apparatus |
Non-Patent Citations (1)
Title |
---|
JP昭58-217495A 1983.12.17 |
Also Published As
Publication number | Publication date |
---|---|
ATE529544T1 (de) | 2011-11-15 |
US8404049B2 (en) | 2013-03-26 |
JP5237390B2 (ja) | 2013-07-17 |
KR20100113067A (ko) | 2010-10-20 |
TW200939384A (en) | 2009-09-16 |
KR101478863B1 (ko) | 2015-01-02 |
MY160289A (en) | 2017-02-28 |
WO2009086259A1 (en) | 2009-07-09 |
EP2222901B1 (en) | 2011-10-19 |
JP2011508455A (ja) | 2011-03-10 |
CN101910475A (zh) | 2010-12-08 |
EP2222901A1 (en) | 2010-09-01 |
US20090165719A1 (en) | 2009-07-02 |
TWI416650B (zh) | 2013-11-21 |
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GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190925 Address after: Taiwan, China Hsinchu Science Park industrial two East Road, No. 8 Patentee after: GlobalWafers Co.,Ltd. Address before: Singapore City Patentee before: SunEdison Semiconductor Limited (UEN201334164H) Effective date of registration: 20190925 Address after: Singapore City Patentee after: SunEdison Semiconductor Limited (UEN201334164H) Address before: Missouri, USA Patentee before: MEMC Electronic Materials, Inc. |
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