ATE529544T1 - Epitaktischer barrelsuszeptor zur verbesserter gleichmässigen dicke einer epitaktischen schicht - Google Patents

Epitaktischer barrelsuszeptor zur verbesserter gleichmässigen dicke einer epitaktischen schicht

Info

Publication number
ATE529544T1
ATE529544T1 AT08866204T AT08866204T ATE529544T1 AT E529544 T1 ATE529544 T1 AT E529544T1 AT 08866204 T AT08866204 T AT 08866204T AT 08866204 T AT08866204 T AT 08866204T AT E529544 T1 ATE529544 T1 AT E529544T1
Authority
AT
Austria
Prior art keywords
epitactic
recess
susceptor
uniform thickness
layer
Prior art date
Application number
AT08866204T
Other languages
English (en)
Inventor
Lance G Hellwig
Srikanth Kommu
John A Pitney
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Application granted granted Critical
Publication of ATE529544T1 publication Critical patent/ATE529544T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT08866204T 2007-12-27 2008-12-22 Epitaktischer barrelsuszeptor zur verbesserter gleichmässigen dicke einer epitaktischen schicht ATE529544T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/965,521 US8404049B2 (en) 2007-12-27 2007-12-27 Epitaxial barrel susceptor having improved thickness uniformity
PCT/US2008/087930 WO2009086259A1 (en) 2007-12-27 2008-12-22 Epitaxial barrel susceptor having improved thickness uniformity

Publications (1)

Publication Number Publication Date
ATE529544T1 true ATE529544T1 (de) 2011-11-15

Family

ID=40350145

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08866204T ATE529544T1 (de) 2007-12-27 2008-12-22 Epitaktischer barrelsuszeptor zur verbesserter gleichmässigen dicke einer epitaktischen schicht

Country Status (9)

Country Link
US (1) US8404049B2 (de)
EP (1) EP2222901B1 (de)
JP (1) JP5237390B2 (de)
KR (1) KR101478863B1 (de)
CN (1) CN101910475B (de)
AT (1) ATE529544T1 (de)
MY (1) MY160289A (de)
TW (1) TWI416650B (de)
WO (1) WO2009086259A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201122148A (en) * 2009-12-24 2011-07-01 Hon Hai Prec Ind Co Ltd Chemical vapor deposition device
US9441295B2 (en) * 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
WO2015006186A1 (en) * 2013-07-09 2015-01-15 Applied Materials, Inc. Thickness control variation
WO2016029161A1 (en) * 2014-08-22 2016-02-25 Applied Materials, Inc. High speed epitaxy system and methods
US10184193B2 (en) 2015-05-18 2019-01-22 Globalwafers Co., Ltd. Epitaxy reactor and susceptor system for improved epitaxial wafer flatness
US20160359080A1 (en) 2015-06-07 2016-12-08 Solarcity Corporation System, method and apparatus for chemical vapor deposition
KR101825469B1 (ko) 2015-12-23 2018-02-05 희성촉매 주식회사 압축천연가스 연소시스템 배기가스 산화촉매
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating
CN106906455A (zh) * 2017-03-30 2017-06-30 河北普兴电子科技股份有限公司 硅外延反应腔用梯形基座
JP7062642B2 (ja) 2017-04-11 2022-05-06 株式会社キャタラー 排ガス浄化用触媒

Family Cites Families (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806360A (en) * 1966-12-15 1974-04-23 Western Electric Co Methods for heating and/or coating articles
US3675619A (en) * 1969-02-25 1972-07-11 Monsanto Co Apparatus for production of epitaxial films
US4496609A (en) * 1969-10-15 1985-01-29 Applied Materials, Inc. Chemical vapor deposition coating process employing radiant heat and a susceptor
US4322592A (en) * 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
JPS58217495A (ja) 1982-06-11 1983-12-17 Toshiba Corp 気相成長炉用加熱基台
US5242501A (en) * 1982-09-10 1993-09-07 Lam Research Corporation Susceptor in chemical vapor deposition reactors
JPS61171242U (de) * 1985-04-11 1986-10-24
US5373806A (en) * 1985-05-20 1994-12-20 Applied Materials, Inc. Particulate-free epitaxial process
US4728389A (en) * 1985-05-20 1988-03-01 Applied Materials, Inc. Particulate-free epitaxial process
US4823736A (en) * 1985-07-22 1989-04-25 Air Products And Chemicals, Inc. Barrel structure for semiconductor epitaxial reactor
US5200157A (en) * 1986-02-17 1993-04-06 Toshiba Ceramics Co., Ltd. Susceptor for vapor-growth deposition
US4713827A (en) 1986-11-10 1987-12-15 Ncr Corporation Terminator for a cmos transceiver device
JPH07120628B2 (ja) * 1988-04-08 1995-12-20 三菱化学株式会社 バレル型サセプタ
US5116181A (en) * 1989-05-19 1992-05-26 Applied Materials, Inc. Robotically loaded epitaxial deposition apparatus
EP0448346B1 (de) * 1990-03-19 1997-07-09 Kabushiki Kaisha Toshiba Vorrichtung zur Dampfphasenabscheidung
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing
US5192371A (en) * 1991-05-21 1993-03-09 Asm Japan K.K. Substrate supporting apparatus for a CVD apparatus
US5298107A (en) * 1992-02-27 1994-03-29 Applied Materials, Inc. Processing method for growing thick films
US5288364A (en) * 1992-08-20 1994-02-22 Motorola, Inc. Silicon epitaxial reactor and control method
JP2785614B2 (ja) * 1992-09-28 1998-08-13 信越半導体株式会社 シリンダー型エピタキシャル層成長装置
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5580388A (en) 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5444217A (en) 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
DE4305749A1 (de) * 1993-02-25 1994-09-01 Leybold Ag Vorrichtung zum Halten von flachen, kreisscheibenförmigen Substraten in der Vakuumkammer einer Beschichtungs- oder Ätzanlage
US5695568A (en) * 1993-04-05 1997-12-09 Applied Materials, Inc. Chemical vapor deposition chamber
JPH06310431A (ja) 1993-04-27 1994-11-04 Fuji Electric Co Ltd バレル型気相成長装置
JP2652759B2 (ja) * 1993-09-03 1997-09-10 コマツ電子金属株式会社 気相成長装置用バレル型サセプタのウエハポケット
JP2827885B2 (ja) 1994-02-12 1998-11-25 信越半導体株式会社 半導体単結晶基板およびその製造方法
US5439523A (en) * 1994-02-14 1995-08-08 Memc Electronic Materials, Inc. Device for suppressing particle splash onto a semiconductor wafer
JPH0897159A (ja) * 1994-09-29 1996-04-12 Handotai Process Kenkyusho:Kk エピタキシャル成長方法および成長装置
IT1271233B (it) 1994-09-30 1997-05-27 Lpe Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati
US5562947A (en) * 1994-11-09 1996-10-08 Sony Corporation Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment
US5518549A (en) * 1995-04-18 1996-05-21 Memc Electronic Materials, Inc. Susceptor and baffle therefor
EP0757117B1 (de) 1995-08-01 1999-07-07 MEMC Electronic Materials, Inc. Verfahren und Vorrichtung zur Materialabscheidung auf einer Halbleiterscheibe
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
JP3725598B2 (ja) * 1996-01-12 2005-12-14 東芝セラミックス株式会社 エピタキシャルウェハの製造方法
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
JP3596710B2 (ja) * 1996-09-10 2004-12-02 信越半導体株式会社 気相成長装置用サセプタ
JP3336897B2 (ja) * 1997-02-07 2002-10-21 三菱住友シリコン株式会社 気相成長装置用サセプター
US6110289A (en) * 1997-02-25 2000-08-29 Moore Epitaxial, Inc. Rapid thermal processing barrel reactor for processing substrates
US5968277A (en) * 1997-10-10 1999-10-19 Seh America, Inc. Susceptor apparatus for epitaxial deposition and method for reducing slip formation on semiconductor substrates
DE69813014T2 (de) 1997-11-03 2004-02-12 Asm America Inc., Phoenix Verbesserte kleinmassige waferhaleeinrichtung
EP1308989A3 (de) 1997-11-03 2007-12-26 ASM America, Inc. Verbesserte kleinmassige Waferhaleeinrichtung
US6129048A (en) * 1998-06-30 2000-10-10 Memc Electronic Materials, Inc. Susceptor for barrel reactor
JP2000133187A (ja) 1998-10-22 2000-05-12 Hitachi Ltd 電子顕微鏡の試料ステージ
IT1312150B1 (it) 1999-03-25 2002-04-09 Lpe Spa Perfezionata camera di reazione per reattore epitassiale
US6184154B1 (en) * 1999-10-13 2001-02-06 Seh America, Inc. Method of processing the backside of a wafer within an epitaxial reactor chamber
JP4592849B2 (ja) * 1999-10-29 2010-12-08 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
US6444027B1 (en) * 2000-05-08 2002-09-03 Memc Electronic Materials, Inc. Modified susceptor for use in chemical vapor deposition process
US20030037723A9 (en) * 2000-11-17 2003-02-27 Memc Electronic Materials, Inc. High throughput epitaxial growth by chemical vapor deposition
KR100765539B1 (ko) * 2001-05-18 2007-10-10 엘지.필립스 엘시디 주식회사 화학기상 증착장비
US7122844B2 (en) * 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
US7048316B1 (en) * 2002-07-12 2006-05-23 Novellus Systems, Inc. Compound angled pad end-effector
US7285483B2 (en) * 2003-06-26 2007-10-23 Silitronic Ag Coated semiconductor wafer, and process and apparatus for producing the semiconductor wafer
DE10328842B4 (de) * 2003-06-26 2007-03-01 Siltronic Ag Suszeptor für eine chemische Gasphasenabscheidung, Verfahren zur Bearbeitung einer Halbleiterscheibe durch chemische Gasphasenabscheidung und nach dem Verfahren bearbeitete Halbleiterscheibe
JP4417669B2 (ja) * 2003-07-28 2010-02-17 日本エー・エス・エム株式会社 半導体処理装置および半導体ウエハーの導入方法
JP2005183834A (ja) * 2003-12-22 2005-07-07 Toshiba Ceramics Co Ltd バレル型サセプタ
JP4551106B2 (ja) * 2004-03-31 2010-09-22 東洋炭素株式会社 サセプタ
KR20080031515A (ko) * 2004-05-18 2008-04-08 가부시키가이샤 섬코 기상 성장 장치용 서셉터
DE102004058521A1 (de) * 2004-12-04 2006-06-14 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von dicken Gallium-Nitrit-Schichten auf einem Saphirsubstrat und zugehörigen Substrathalter
US7198677B2 (en) * 2005-03-09 2007-04-03 Wafermasters, Inc. Low temperature wafer backside cleaning
US7462246B2 (en) * 2005-04-15 2008-12-09 Memc Electronic Materials, Inc. Modified susceptor for barrel reactor
JP4841873B2 (ja) * 2005-06-23 2011-12-21 大日本スクリーン製造株式会社 熱処理用サセプタおよび熱処理装置
US20070218702A1 (en) * 2006-03-15 2007-09-20 Asm Japan K.K. Semiconductor-processing apparatus with rotating susceptor

Also Published As

Publication number Publication date
US20090165719A1 (en) 2009-07-02
TW200939384A (en) 2009-09-16
TWI416650B (zh) 2013-11-21
EP2222901B1 (de) 2011-10-19
CN101910475B (zh) 2013-06-12
KR20100113067A (ko) 2010-10-20
MY160289A (en) 2017-02-28
CN101910475A (zh) 2010-12-08
JP5237390B2 (ja) 2013-07-17
WO2009086259A1 (en) 2009-07-09
EP2222901A1 (de) 2010-09-01
JP2011508455A (ja) 2011-03-10
KR101478863B1 (ko) 2015-01-02
US8404049B2 (en) 2013-03-26

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