CN106906455A - 硅外延反应腔用梯形基座 - Google Patents

硅外延反应腔用梯形基座 Download PDF

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CN106906455A
CN106906455A CN201710202521.9A CN201710202521A CN106906455A CN 106906455 A CN106906455 A CN 106906455A CN 201710202521 A CN201710202521 A CN 201710202521A CN 106906455 A CN106906455 A CN 106906455A
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base body
trapezoidal
reaction cavity
silicon epitaxial
joint face
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Inventor
侯志义
陈秉克
赵丽霞
袁肇耿
薛宏伟
任丽翠
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Puxing Electronic Science & Technology Co Ltd Hebei
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Puxing Electronic Science & Technology Co Ltd Hebei
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

本发明公开了一种硅外延反应腔用梯形基座，涉及化学气相沉积用设备技术领域。所述基座包括梯形基座本体，所述梯形基座本体为筒状多面体结构，所述基座本体的每个侧面上从上到下设有硅片放置槽，所述基座本体相邻两个侧面的连接面上设有档条。通过在所述基座本体相邻两个侧面的连接面上设置档条，阻挡部分气流，使得能够改变反应腔室结构造成的硅片外延层左右位置厚度偏大趋势，改善片内厚度形貌、提高片内厚度一致性。

Description

硅外延反应腔用梯形基座
技术领域
本发明涉及化学气相沉积用设备技术领域，尤其涉及一种硅外延反应腔用梯形基座。
背景技术
桶式反应腔（如图1所示）中硅片贴附在梯形基座表面，硅片中心位置与边缘位置距钟罩距离不同，中心位置远，边缘位置近，造成硅片左右位置接触气流面积大，形成边缘生长速率比中心快，所以在相同工艺条件下，边缘厚度比中心厚度厚。厚度作为外延层质量重要控制参数，直接影响到电特性、VDMOS导通电阻、肖特基二极管正向压降等关键参数一致性。
发明内容
本发明所要解决的技术问题是提供一种硅外延反应腔用梯形基座附属挂件，通过使用具有所述基座的反应腔，能够改变反应腔室结构造成的硅片外延层左右位置厚度偏大趋势，改善片内厚度形貌、提高片内厚度一致性。
为解决上述技术问题，本发明所采取的技术方案是：一种硅外延反应腔用梯形基座，包括梯形基座本体，所述梯形基座本体为筒状多面体结构，所述基座本体的每个侧面上从上到下设有硅片放置槽，其特征在于：所述基座本体相邻两个侧面的连接面上设有档条。
进一步的技术方案在于：所述档条设有两根，沿所述连接面的上、下方向设置。
进一步的技术方案在于：每个连接面上的两根档条之间设有空隙。
进一步的技术方案在于：所述档条的横截面为长方形。
进一步的技术方案在于：所述硅片放置槽设有两个。
进一步的技术方案在于：所述两个硅片放置槽靠近所述基座本体的下侧设置。
采用上述技术方案所产生的有益效果在于：通过在所述基座本体相邻两个侧面的连接面上设置档条，阻挡部分气流，使得能够改变反应腔室结构造成的硅片外延层左右位置厚度偏大趋势，改善片内厚度形貌、提高片内厚度一致性。
附图说明
图1是现有技术中所述桶式反应腔的结构示意图；
图2是本发明实施例所述基座的立体结构示意图；
其中：1、梯形基座本体2、硅片放置槽3、档条。
具体实施方式
下面结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在下面的描述中阐述了很多具体细节以便于充分理解本发明，但是本发明还可以采用其他不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似推广，因此本发明不受下面公开的具体实施例的限制。
如图2所示，本发明实施例公开了一种硅外延反应腔用梯形基座，包括梯形基座本体1，所述梯形基座本体1为筒状多面体结构，所述基座本体的每个侧面上从上到下设有硅片放置槽2，需要说明的是，以上技术方案是现有技术，在此不做赘述。
本发明不用于现有技术之处在于：所述基座本体相邻两个侧面的连接面上设有档条3。优选的，如图2所示，所述档条3设有两根，沿所述连接面的上、下方向设置。进一步的，每个连接面上的两根档条3之间设有空隙，用于使部分气流通过。需要说明的是，所述档条的个数还可以是三根或三根以上，同样的档条之间设置空隙，用于使部分气流通过。
优选的，所述档条3的横截面可以为正方形，当然还可以为其它形状（本发明在于挂条宽度不同影响厚度均匀性趋势不同，本发明通过实验确定最佳挂条宽度）。而所述硅片放置槽2靠近所述基座本体的下侧设置，且优选设有两个，当然还可以为其它个数。
通过在所述基座本体相邻两个侧面的连接面上设置档条，阻挡部分气流，使得能够改变反应腔室结构造成的硅片外延层左右位置厚度偏大趋势，改善片内厚度形貌、提高片内厚度一致性。

Claims (6)

1.一种硅外延反应腔用梯形基座，包括梯形基座本体（1），所述梯形基座本体（1）为筒状多面体结构，所述基座本体的每个侧面上从上到下设有硅片放置槽（2），其特征在于：所述基座本体相邻两个侧面的连接面上设有档条（3）。
2.如权利要求1所述的硅外延反应腔用梯形基座，其特征在于：所述档条（3）设有两根，沿所述连接面的上、下方向设置。
3.如权利要求2所述的硅外延反应腔用梯形基座，其特征在于：每个连接面上的两根档条（3）之间设有空隙。
4.如权利要求1所述的硅外延反应腔用梯形基座，其特征在于：所述档条（3）的横截面为正方形。
5.如权利要求1所述的硅外延反应腔用梯形基座，其特征在于：所述硅片放置槽（2）设有两个。
6.如权利要求5所述的硅外延反应腔用梯形基座，其特征在于：所述两个硅片放置槽（2）靠近所述基座本体的下侧设置。
CN201710202521.9A 2017-03-30 2017-03-30 硅外延反应腔用梯形基座 Pending CN106906455A (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0415191A1 (en) * 1989-08-31 1991-03-06 Lpe Spa System for controlling epitaxial grow rate in vertical provided with a frustum pyramid susceptor
WO2003023093A2 (en) * 2001-09-07 2003-03-20 Lpe Spa Susceptor with epitaxial growth control devices and epitaxial reactor using the same
CN101910475A (zh) * 2007-12-27 2010-12-08 Memc电子材料有限公司 具有改善的厚度均匀性的外延筒形基座
CN103985657A (zh) * 2014-05-19 2014-08-13 上海先进半导体制造股份有限公司 桶式炉和半导体制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0415191A1 (en) * 1989-08-31 1991-03-06 Lpe Spa System for controlling epitaxial grow rate in vertical provided with a frustum pyramid susceptor
WO2003023093A2 (en) * 2001-09-07 2003-03-20 Lpe Spa Susceptor with epitaxial growth control devices and epitaxial reactor using the same
CN101910475A (zh) * 2007-12-27 2010-12-08 Memc电子材料有限公司 具有改善的厚度均匀性的外延筒形基座
CN103985657A (zh) * 2014-05-19 2014-08-13 上海先进半导体制造股份有限公司 桶式炉和半导体制造方法

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Application publication date: 20170630