CN101853827A - 多层布线基板、堆叠结构传感器封装及其制造方法 - Google Patents

多层布线基板、堆叠结构传感器封装及其制造方法 Download PDF

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CN101853827A
CN101853827A CN201010150820A CN201010150820A CN101853827A CN 101853827 A CN101853827 A CN 101853827A CN 201010150820 A CN201010150820 A CN 201010150820A CN 201010150820 A CN201010150820 A CN 201010150820A CN 101853827 A CN101853827 A CN 101853827A
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layer wire
wire substrate
substrate
hole
sensor package
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CN101853827B (zh
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渋田宪子
寺崎达
山田朋恭
内藤信夫
津久田幸彦
野野山龙
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Sony Corp
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Abstract

本发明涉及多层布线基板、堆叠结构传感器封装及其制造方法。该多层布线基板具有从第一表面贯通至第二表面的通孔。该多层布线基板包括在第一表面和第二表面的至少一个上,形成在作为通孔的周缘的内沿部分、作为基板的外周的外沿部分和非沿部分中的至少一个中的电连接端子。该电连接端子具有没有贯通到与形成表面相对的表面的齿形结构。

Description

多层布线基板、堆叠结构传感器封装及其制造方法
技术领域
本发明涉及应用于图像传感器等的多层布线基板、堆叠结构传感器封装以及该堆叠结构传感器封装的制造方法。
背景技术
日本未审专利申请公报No.2002-353427提出了一种图像传感器的堆叠结构传感器封装。
图1示出了在日本未审专利申请公报No.2002-353427中公开的图像传感器的堆叠结构传感器封装。
在图1中的传感器封装结构中,框状第二基板2接合在第一基板1的第一表面上,从而形成空腔3。
集成电路4在空腔3中安装在第一基板1的第一表面上,并且图像传感器芯片5接合在第二基板2上。这样,形成了堆叠结构传感器封装。
发明内容
然而,上述结构受限于在通过第一基板1和第二基板2形成空腔3后才接合集成电路4的堆叠制造处理。这具有下面的缺点。
由于同一处理步骤中的堆叠是必需的,所以制造场所受到限制。
此外,发生缺陷会导致高废弃成本。详细地讲,当在制造期间例如在图像传感器密封期间发生缺陷时,由于缺陷需要废弃堆叠结构传感器封装的所有部件。
当上述的堆叠结构传感器封装通过第一基板1的后表面上的接合端子而接合到另一个结构时,堆叠结构传感器封装通常焊接到有机基板。然而,由于接合区域被限于底表面,所以可能存在连接强度的问题。
另外,由于封装了传感器和用于处理传感器信号的集成电路4,所以用于实现附加功能的部件另外置于封装之外。这与小型化矛盾。
希望提供一种即使当在制造期间发生缺陷仍能够再利用传感器部件,能够提高传感器部件的连接强度并且使得结构更小更薄的多层布线基板、堆叠结构传感器封装以及该堆叠结构传感器封装的制造方法。
根据本发明的实施例的多层布线基板具有从第一表面贯通至第二表面的通孔,并且包括形成在第一表面和第二表面的至少一个上的作为通孔的周缘的内沿部分、作为基板的外周的外沿部分和非沿部分中的至少一个中的电连接端子。该电连接端子具有没有贯通到与形成表面相对的表面的齿形(castellation)结构。
根据本发明的另一个实施例的堆叠结构传感器封装包括:多层布线基板,具有通孔,包括位于第一表面上的线接合焊盘和位于第二表面上的电连接端子,该电连接端子形成在作为通孔的周缘的内沿部分、作为基板的外周的外沿部分和非沿部分中的至少一个中;图像传感器,固定到所述多层布线基板的第一表面上的所述通孔的周缘以跨越所述多层布线基板的所述通孔,并且通过线电连接到所述焊盘;框架,固定到所述多层布线基板的第一表面上的外沿部分以包围图像传感器;以及滤光片,固定到框架的表面以面对图像传感器。
根据本发明的又一个实施例的堆叠结构传感器封装的制造方法,包括如下步骤:将图像传感器固定到多层布线基板的第一表面上的通孔的周缘以跨越多层布线基板的通孔,所述多层布线基板具有通孔并且包括位于第一表面上的线接合焊盘和位于第二表面上的电连接端子,所述电连接端子形成在作为通孔的周缘的内沿部分、作为基板的外周的外沿部分和非沿部分中的至少一个中;通过线将多层布线基板的所述焊盘与图像传感器电连接;将框架固定到多层布线基板的第一表面上的外沿部分以包围图像传感器;以及将滤光片固定到框架的表面以面对图像传感器。
根据本发明的实施例,即使当在具有堆叠结构的传感器封装的制造期间发生缺陷时也可以再利用传感器部件,并且可以提高传感器部件的连接强度,以及使得结构更小更薄。
附图说明
图1示出了日本未审专利申请公报No.2002-353427中公开的图像传感器的堆叠结构传感器封装;
图2示出了根据本发明的一个实施例的应用了多层布线基板的堆叠结构传感器封装的结构示例;
图3示出了根据本发明的该实施例的多层布线基板的第一结构示例;
图4示出了根据本发明的该实施例的多层布线基板的第二结构示例;
图5示出了根据本发明的该实施例的多层布线基板的第三结构示例;
图6示出了根据本发明的该实施例的多层布线基板的第四结构示例;
图7示出了根据本发明的该实施例的多层布线基板的第五结构示例;
图8示出了根据本发明的该实施例的多层布线基板的第六结构示例;
图9示出了根据本发明的该实施例的多层布线基板的第七结构示例;
图10示出了相对于图9中的多层布线基板的、图6和图3中的各个多层布线基板中的电极数目以及测量的针对热冲击的焊接强度的结果;
图11A到11D示出了图2中的堆叠结构传感器封装的制造方法;以及
图12示出了根据本发明的另一个实施例的应用了多层布线基板的堆叠结构传感器封装的结构示例。
具体实施方式
下面参照附图按照下面的顺序描述本发明的实施例。
1.实施例
2.另一个实施例
<1.实施例>
图2示出了根据本发明的一个实施例的应用了多层布线基板的堆叠结构传感器封装的结构示例。
传感器封装10具有堆叠结构,该堆叠结构基本上包括多层布线基板11、图像传感器芯片12、由陶瓷、树脂等形成的框架13以及滤光片14作为主要部件。
多层布线基板11是用作图像传感器的堆叠结构传感器封装10的基体并且具有下面的特征结构的基板。
在多层布线基板11的中央部分中形成有通孔113,该通孔113从第一表面(前表面)111贯通至第二表面(后表面)112。
在多层布线基板11中,在第一表面111和第二表面112的至少一个上的内沿部分IEP(通孔113的周缘)、外沿部分OEP(基板自身的外周)和非沿部分中的至少一个中形成电连接端子(电极)。
在多层布线基板11中,在内沿部分IEP和外沿部分OEP的至少一个中形成的电连接端子(电极)具有不贯通至(没有到达)与形成表面(以后描述)相对的表面的齿形(凹陷)结构。
在内沿部分IEP和外沿部分OEP的至少一个中形成的电连接端子(电极)用于提高与另一个基板等的连接强度。
此外,在内沿部分IEP和外沿部分OEP的至少一个中形成的电连接端子(电极)的齿形结构具有提高连接强度以及减轻从外部等作用于电极上的压力的功能。
在图2所示的多层布线基板11中,在第一表面111上的内沿部分IEP与外沿部分OEP之间的中央形成线接合焊盘PAD,并且在第二表面112上的内沿部分IEP和外沿部分OEP的至少一个中形成电连接端子(电极)。
此外,在多层布线基板11的第二表面112上的内沿部分IEP与外沿部分OEP之间的中央部分CTP中形成了连接端子(内部电极)。
下面参照附图描述多层布线基板11的更加具体的结构示例。
[多层布线基板的第一结构示例]
图3示出了根据这个实施例的多层布线基板的第一结构示例。
图3示出了多层布线基板11A的第二表面(后表面)112侧的结构示例。
图3中的多层布线基板11A整体上形成为长方体(矩形)。
如上所述,在多层布线基板11A的中央部分中形成了通孔113,该通孔113从第一表面(前表面)111贯通至第二表面(后表面)112。
在图3中的多层布线基板11A中,在第二表面(后表面)112上在作为通孔113的周缘的所有内沿部分IEP1、IEP2、IEP3和IEP4中形成了第一电连接端子(下文称作内周电极)IEL。
此外,在图3中的多层布线基板11A中,在作为基板自身的外周的所有外沿部分OEP1、OEP2、OEP3和OEP4中形成第二电连接端子(下文称作外周电极)OEL。
另外,在图3中的多层布线基板11A中,在基板的外周的四个角CNR1、CNR2、CNR3和CNR4中分别形成了包括在外周电极中的电连接端子(下文称作角电极)OCEL1、OCEL2、OCEL3和OCEL4。
此外,在图3中的多层布线基板11A中,在内沿部分IEP1与外沿部分OEP1之间以及内沿部分IEP3与外沿部分OEP3之间的非沿部分(内部)中形成了第三电连接端子(下文称作内部电极)CTEL1、CTEL2、CTEL3和CTEL4。
在这个实施例中示出的内周电极IEL、外周电极OEL和内部电极CTEL的数目只是示例。尽管为了清楚而将电极的数目例示为几个,但是实际上,电极的数目不限于例示的数目并且可以根据使用用途进行适当的设置。
在图3中,在内沿部分IEP1中形成了内周电极IEL11、IEL12、IEL13、IEL14、IEL15和IEL16。
内周电极IEL11、IEL12、IEL13、IEL14、IEL15和IEL16均被形成为具有其面对通孔113的侧部以圆弧状部分地凹陷的齿形结构。
在内沿部分IEP2中形成了内周电极IEL21、IEL22、IEL23、IEL24和IEL25。
内周电极IEL21、IEL22、IEL23、IEL24和IEL25均被形成为具有其面对通孔113的侧部以圆弧状部分地凹陷的齿形结构。
在内沿部分IEP3中形成了内周电极IEL31、IEL32、IEL33、IEL34、IEL35和IEL36。
内周电极IEL31、IEL32、IEL33、IEL34、IEL35和IEL36均被形成为具有其面对通孔113的侧部以圆弧状部分地凹陷的齿形结构。
在内沿部分IEP4中形成了内周电极IEL41、IEL42、IEL43、IEL44和IEL45。
内周电极IEL41、IEL42、IEL43、IEL44和IEL45均被形成为具有其面对通孔113的侧部以圆弧状部分地凹陷的齿形结构。
在图3中,在外沿部分OEP1中形成了外周电极OEL11、OEL12、OEL13、OEL14、OEL15、OEL16、OEL17和OEL18。
外周电极OEL11、OEL12、OEL13、OEL14、OEL15、OEL16、OEL17和OEL18均被形成为具有其面对外部的侧部以圆弧状部分地凹陷的齿形结构。
在外沿部分OEP2中形成了外周电极OEL21、OEL22、OEL23、OEL24和OEL25。
外周电极OEL21、OEL22、OEL23、OEL24和OEL25均被形成为具有其面对外部的侧部以圆弧状部分地凹陷的齿形结构。
在外沿部分OEP3中形成了外周电极OEL31、OEL32、OEL33、OEL34、OEL35、OEL36、OEL37和OEL38。
外周电极OEL31、OEL32、OEL33、OEL34、OEL35、OEL36、OEL37和OEL38均被形成为具有其面对外部的侧部以圆弧状部分地凹陷的齿形结构。
在外沿部分OEP4中形成了外周电极OEL41、OEL42、OEL43、OEL44和OEL45。
外周电极OEL41、OEL42、OEL43、OEL44和OEL45均被形成为具有其面对外部的侧部以圆弧状部分地凹陷的齿形结构。
此外,角电极OCEL1、OCEL2、OCEL3和OCEL4均被形成为具有其面对外部的侧部以圆弧状部分地凹陷的齿形结构。
因此,在图3中的多层布线基板11A中,在第二表面(后表面)112上,在作为通孔113的周缘的所有内沿部分IEP1、IEP2、IEP3和IEP4中形成了内周电极IEL。
此外,在图3中的多层布线基板11A中,在作为基板自身的外周的所有外沿部分OEP1、OEP2、OEP3和OEP4中形成了外周电极OEL。
另外,在图3中的多层布线基板11A中,在基板的外周的四个角CNR1、CNR2、CNR3和CNR4中分别形成了角电极OCEL1、OCEL2、OCEL3和OCEL4。
由于这些电极中的每一个具有齿形结构,所以与例如后面描述的在任何沿部分都不设置电极的情况相比,能够增加电极的数目并且能够增强针对热冲击的焊接连接强度等。
此外,图3中的多层布线基板11A具有一种有效形状,该有效形状使得在多层布线基板11A被接合到另一个多层布线基板时,可以可视地检查接合区域,并且图3中的多层布线基板11A具有考虑了检查性的电极布置。
[多层布线基板的第二结构示例]
图4示出了根据这个实施例的多层布线基板的第二结构示例。
图4示出了多层布线基板11B的第二表面(后表面)112侧的结构示例。
图4中的多层布线基板11B与图3中的多层布线基板11A的基本不同点在于没有形成内部电极CTEL1、CTEL2、CTEL3和CTEL4。
在图4中的多层布线基板11B中,在内沿部分IEP2中形成了三个内周电极IEL21、IEL22和IEL23,并且在内沿部分IEP4中形成了三个内周电极IEL41、IEL42和IEL43。
图4中的多层布线基板11B还具有这样一种形状,该形状使得在多层布线基板11B被接合到另一个多层布线基板时,可以可视地检查接合区域,并且图4中的多层布线基板11B具有考虑了检查性的电极布置。
此外,在多层布线基板11B中,与例如在任何沿部分中不设置电极的情况相比,能够增加电极的数目并且能够增强针对热冲击的焊接连接强度。
[多层布线基板的第三结构示例]
图5示出了根据这个实施例的多层布线基板的第三结构示例。
图5示出了多层布线基板11C的第二表面(后表面)112侧的结构示例。
图5中的多层布线基板11C与图3中的多层布线基板11A的基本不同之处在于下面的点。
在多层布线基板11C中,在内沿部分IEP2和IEP4中没有形成内周电极,并且在内沿部分IEP2与外沿部分OEP2之间以及内沿部分IEP4与外沿部分OEP4之间的每个非沿部分中形成了多个(图5中为五个)内部电极CTEL。
在多层布线基板11C中,与例如在任何沿部分中不设置电极的情况相比,能够增加电极的数目并且能够增强针对热冲击的焊接连接强度。
[多层布线基板的第四结构示例]
图6示出了根据这个实施例的多层布线基板的第四结构示例。
图6示出了多层布线基板11D的第二表面(后表面)112侧的结构示例。
图6中的多层布线基板11D与图5中的多层布线基板11C的基本不同之处在于下面的点。
在多层布线基板11D中,在内沿部分IEP1、IEP2、IEP3和IEP4的任何一个中没有形成内周电极。
多层布线基板11D具有用于使通孔113最大化,从而在多层布线基板11D被接合到另一个多层布线基板时使通孔113内部的安装面积最大化的有效形状。
此外,在多层布线基板11D中,与例如在任何沿部分中不设置电极的情况相比,能够增加电极的数目并且能够增强针对热冲击的焊接连接强度。
[多层布线基板的第五结构示例]
图7示出了根据这个实施例的多层布线基板的第五结构示例。
图7示出了多层布线基板11E的第二表面(后表面)112侧的结构示例。
图7中的多层布线基板11E与图5中的多层布线基板11C的基本不同之处在于下面的点。
在多层布线基板11E中,在内沿部分IEP2和IEP4中没有形成内周电极,在外沿部分OEP1到OEP4的任何一个中没有形成外周电极,并且在整个非沿部分上形成了多个(图7中为42个)内部电极CTEL作为用于连接的内部电极。
多层布线基板11E具有如下的有效形状,该有效形状在多层布线基板11E被接合到另一个多层布线基板时增加连接端子的数目并且还提供与根据这个实施例的多层布线基板的外形相同的安装面积。
此外,在多层布线基板11E中,与例如在任何沿部分中不设置电极的情况相比,能够增加电极的数目并且能够增强针对热冲击的焊接连接强度。
[多层布线基板的第六结构示例]
图8示出了根据这个实施例的多层布线基板的第六结构示例。
图8示出了多层布线基板11F的第二表面(后表面)112侧的结构示例。
图8中的多层布线基板11F与图5中的多层布线基板11C的基本不同之处在于下面的点。
在多层布线基板11F中,在外沿部分OEP1到OEP4的任何一个中没有形成外周电极,并且在整个非沿部分中没有形成用于连接的内部电极。
在多层布线基板11F中,与例如在任何沿部分中没有设置电极的情况相比,能够增加电极的数目并且能够增强针对热冲击的焊接连接强度。
[多层布线基板的第七结构示例]
图9示出了根据这个实施例的多层布线基板的第七结构示例。
图9示出了多层布线基板11G的第二表面(后表面)112侧的结构示例。
图9中的多层布线基板11G与图6中的多层布线基板11D的基本不同之处在于下面的点。
在多层布线基板11G中,在外沿部分OEP1到OEP4的任何一个中没有形成外周电极,并且在整个非沿部分上形成了多个用于连接的内部电极。
多层布线基板11G具有在多层布线基板11G被接合到另一个多层布线基板时使安装面积最小化的有效形状。
在多层布线基板11G中,尽管连接强度低于第一到第六结构示例,但是能够增加内部电极的数目。
在下文中,相对于图9中的多层布线基板11G,检查图6中的多层布线基板11D和图3中的多层布线基板11A中的每一个中的电极的数目以及针对热冲击的焊接强度。
图10示出了相对于图9中的多层布线基板的、图6和图3中的各个多层布线基板中的电极数目以及测量的针对热冲击的焊接强度的结果。
在图10中,连接强度表示为测试件的实测值与作为基准(基准模式)而设置为1的图9中的多层布线基板11G的值的比率。
在这种情况下,图6中的多层布线基板11D的连接强度是作为基准模式的图9中的多层布线基板11G的1.71倍。
图3中的多层布线基板11A的连接强度是作为基准模式的图9中的多层布线基板11G的1.64倍。
同时,当图9中的多层布线基板11G中的电极的数目是40时,图6中的多层布线基板11D中的电极的数目是56,这是作为基准模式的图9中的多层布线基板11G的电极数目的1.4倍。
图3中的多层布线基板11A中的电极的数目是56,这是作为基准模式的图9中的多层布线基板11G的电极数目的1.4倍。
如上所述,在根据这个实施例的多层布线基板11以及11A到11F中,在中央部分中形成从第一表面(前表面)111贯通至第二表面(后表面)112的通孔113。
在多层布线基板11中,在第一表面111和第二表面112的至少一个上,在作为通孔113的周缘的内沿部分IEP、作为基板自身的外周的外沿部分OEP和非沿部分的至少一个中形成了电连接端子(电极)。
在多层布线基板11中,在内沿部分IEP和外沿部分OEP的至少一个中形成的电连接端子(电极)具有没有贯通至(没有到达)与形成表面相对的表面的齿形(凹陷)结构。
因此,多层布线基板11以及11A到11F能够提高与另一个基板等的连接强度,还能够增加电极的数目(端子的数目)。
此外,多层布线基板11G能够使得与另一个多层布线基板接合时的安装面积最小化。
利用具有上述特征的多层布线基板11以及11A到11G中的任何一个的图2中的堆叠结构传感器封装10使得即使在制造期间发生缺陷时也能够再利用传感器部件,并且能够提高传感器部件的连接强度,以及使得结构更小更薄。
图11A到图11D示出了图2中的堆叠结构传感器封装10的制造方法。
在下文中参照图11A到图11D描述图2中的堆叠结构传感器封装10的制造方法。
首先,如图11A所示,将图像传感器12通过粘合剂15固定到多层布线基板11的表面,该多层布线基板11具有通孔113,并且包括位于第一表面(前表面)111上的线接合焊盘PAD以及位于第二表面(后表面)112上的用于与另一个基板进行连接的电极IEL、OEL和CTEL中的至少任何一个。
接下来,如图11B所示,将图像传感器12与多层布线基板11的焊盘PAD通过导线16电连接。
跟着,如图11C所示,将框架13通过粘合剂17固定到多层布线基板11的第一表面(前表面)111以包围图像传感器12。
随后,如图11D所示,将滤光片14通过粘合剂18接合到由陶瓷、树脂等形成的框架13的表面并且密封在一起。
这完成了作为图像传感器部件的图2中的堆叠结构传感器封装10的制造。
以这种方式制造的图2中的堆叠结构传感器封装10使得即使在制造期间发生缺陷时也能够再利用传感器部件,并且能够提高传感器部件的连接强度,以及使得结构更小更薄。
<2.另一个实施例>
图12示出了根据本发明的另一个实施例的应用了多层布线基板的堆叠结构传感器封装的结构示例。
根据该另一个实施例的堆叠结构传感器封装10A与根据早先描述的实施例的传感器封装10的不同之处在于下面的点。
在堆叠结构传感器封装10A中,安装有例如集成电路21和如电阻器的电子部件22的电子器件的有机多层基板20通过焊料24在上述的连接端子(电极)处连接到多层布线基板11的第二表面(后表面)112。
在制造出上述的图2中的传感器封装10后,通过下面的制造过程形成堆叠结构传感器封装10A。
将集成电路21和电子部件22安装在有机多层基板20上的、多层布线基板11以外的位置,将传感器封装10安装为覆盖集成电路21和电子部件22,并且将传感器封装10与有机多层基板20同时焊接以获得具有堆叠结构的传感器封装10A。
在上面已描述了根据实施例的堆叠结构传感器封装10和10A。
在以上描述中,图3到图9仅仅示出了电极布置的示例,并且电极的数目、电极之间的间距以及电极尺寸根据用途而改变。
此外,多层布线基板11和通孔113的形状根据用途而改变。
多层布线基板11可以是有机基板和无机基板中的任何一个。
多层布线基板11中的电极电镀可以是铜构图、镀金处理或防锈处理。
另外,安装在根据实施例的半导体器件下的部件可以是有源部件和无源部件中的任何一个。
如上所述,根据实施例,在传感器部件中使用具有通孔113的多层布线基板11。
结果,当在另外的处理中将传感器部件与传感器封装操作所需的电子部件和集成电路进行封装时,可将电子部件和集成电路置于传感器部件之下。
此外,通过能够同时将传感器部件与这些部件焊接在一起的堆叠结构传感器封装的制造方法,能够获得下面的效果。
通过利用具有通孔113的多层布线基板11,连接端子不仅能够设置在基板的底表面上还能够设置在基板的外周和通孔的周缘中。此外,由于每个端子具有齿形结构,所以在焊接时能够形成楞条(fillet),这提高了有机多层基板与传感器封装(传感器部件)之间的接合强度。
通过将包括具有通孔113的多层布线基板11的传感器封装视为部件,能够在普通安装设备中制造堆叠结构传感器封装,这对任何制造场所的制造过程提供了通用性。
通过将包括具有通孔113的多层布线基板11的传感器封装视为部件,能够与置于传感器之下的电子部件和集成电路一起进行焊接。这使得能够通过简单的过程制造堆叠结构传感器封装。
由于可以焊接置于包括具有通孔113的多层布线基板11的传感器封装之下的部件,所以不仅能够利用集成电路还能够利用多样的部件。这有助于提高灵活性以及堆叠结构传感器封装的性能。
在与置于传感器封装之下的电子部件和集成电路分离的过程中制造包括具有通孔113的多层布线基板11的传感器封装。因此,当在制造传感器部件期间发生缺陷时,仅有传感器部件是废弃费用的对象。因此,能够降低发生缺陷时的废弃费用。
另外,当在制造传感器封装期间发生缺陷时,能够通过再利用传感器部件来降低废弃费用。
本申请包含与在2009年3月30日提交到日本专利局的日本在先专利申请JP 2009-083658中公开的主题有关的主题,通过引用将其全部内容并入本文。
本领域技术人员应当明白,可以根据设计要求和其它因素想到各种变型、组合、子组合和替代,只要它们位于权利要求及其等同物的范围内即可。

Claims (9)

1.一种多层布线基板,具有第一表面和第二表面,所述基板包括:
从第一表面贯通至第二表面的通孔;以及
电连接端子,在第一表面和第二表面的至少一个上,形成在作为通孔的周缘的内沿部分、作为基板的外周的外沿部分和非沿部分中的至少一个中,
其中,电连接端子具有没有贯通到与形成表面相对的表面的齿形结构。
2.根据权利要求1的多层布线基板,其中,电连接端子至少形成在所述内沿部分和所述外沿部分之中的所述外沿部分中。
3.根据权利要求1或2的多层布线基板,其中,电连接端子形成在所述内沿部分与所述外沿部分之间的非沿部分中。
4.一种堆叠结构传感器封装,包括:
多层布线基板,具有通孔并包括位于第一表面上的线接合焊盘和位于第二表面上的电连接端子,所述电连接端子形成在作为通孔的周缘的内沿部分、作为基板的外周的外沿部分和非沿部分中的至少一个中;
图像传感器,固定到多层布线基板的第一表面上的所述通孔的周缘以跨越多层布线基板的所述通孔,并且通过导线电连接到所述焊盘;
框架,固定到多层布线基板的第一表面上的所述外沿部分以包围图像传感器;以及
滤光片,固定到框架的表面以面对图像传感器。
5.根据权利要求4的堆叠结构传感器封装,其中,安装有电子器件的多层基板通过连接端子连接到多层布线基板的第二表面。
6.根据权利要求4或5的堆叠结构传感器封装,其中,电连接端子至少形成在所述内沿部分和所述外沿部分之中的所述外沿部分中。
7.根据权利要求4到6之一的堆叠结构传感器封装,其中,电连接端子形成在所述内沿部分与所述外沿部分之间的非沿部分中。
8.一种堆叠结构传感器封装的制造方法,包括如下步骤:
将图像传感器固定到多层布线基板的第一表面上的通孔的周缘以跨越多层布线基板的通孔,所述多层布线基板具有所述通孔并且包括位于第一表面上的线接合焊盘和位于第二表面上的电连接端子,所述电连接端子形成在作为通孔的周缘的内沿部分、作为基板的外周的外沿部分和非沿部分中的至少一个中;
通过导线将多层布线基板的所述焊盘与图像传感器电连接;
将框架固定到多层布线基板的第一表面上的所述外沿部分以包围图像传感器;以及
将滤光片固定到框架的表面以面对图像传感器。
9.根据权利要求8的堆叠结构传感器封装的制造方法,还包括如下步骤:通过连接端子将安装有电子器件的多层基板焊接到所述多层布线基板的第二表面。
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102867836A (zh) * 2011-07-07 2013-01-09 索尼公司 固态图像传感装置和电子设备
CN103378118A (zh) * 2012-04-27 2013-10-30 佳能株式会社 电子元器件、安装部件、电子装置和它们的制造方法
CN104458865A (zh) * 2013-09-16 2015-03-25 Lg伊诺特有限公司 气体传感器组件
US9220172B2 (en) 2012-04-27 2015-12-22 Canon Kabushiki Kaisha Electronic component, electronic module, their manufacturing methods, mounting member, and electronic apparatus
US9253922B2 (en) 2012-04-27 2016-02-02 Canon Kabushiki Kaisha Electronic component and electronic apparatus
CN107532941A (zh) * 2015-04-28 2018-01-02 浜松光子学株式会社 光检测装置
CN109791073A (zh) * 2016-04-29 2019-05-21 西利奥斯技术公司 多光谱成像设备
CN112151564A (zh) * 2020-11-06 2020-12-29 积高电子(无锡)有限公司 应用于图像传感器的叠层封装结构及封装方法

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8175345B2 (en) 2004-04-16 2012-05-08 Validity Sensors, Inc. Unitized ergonomic two-dimensional fingerprint motion tracking device and method
US8229184B2 (en) 2004-04-16 2012-07-24 Validity Sensors, Inc. Method and algorithm for accurate finger motion tracking
US8165355B2 (en) 2006-09-11 2012-04-24 Validity Sensors, Inc. Method and apparatus for fingerprint motion tracking using an in-line array for use in navigation applications
US8358815B2 (en) 2004-04-16 2013-01-22 Validity Sensors, Inc. Method and apparatus for two-dimensional finger motion tracking and control
US8447077B2 (en) 2006-09-11 2013-05-21 Validity Sensors, Inc. Method and apparatus for fingerprint motion tracking using an in-line array
US8131026B2 (en) 2004-04-16 2012-03-06 Validity Sensors, Inc. Method and apparatus for fingerprint image reconstruction
WO2005106774A2 (en) 2004-04-23 2005-11-10 Validity Sensors, Inc. Methods and apparatus for acquiring a swiped fingerprint image
WO2006041780A1 (en) 2004-10-04 2006-04-20 Validity Sensors, Inc. Fingerprint sensing assemblies comprising a substrate
US8107212B2 (en) 2007-04-30 2012-01-31 Validity Sensors, Inc. Apparatus and method for protecting fingerprint sensing circuitry from electrostatic discharge
US8290150B2 (en) 2007-05-11 2012-10-16 Validity Sensors, Inc. Method and system for electronically securing an electronic device using physically unclonable functions
US8276816B2 (en) 2007-12-14 2012-10-02 Validity Sensors, Inc. Smart card system with ergonomic fingerprint sensor and method of using
US8204281B2 (en) 2007-12-14 2012-06-19 Validity Sensors, Inc. System and method to remove artifacts from fingerprint sensor scans
US8116540B2 (en) 2008-04-04 2012-02-14 Validity Sensors, Inc. Apparatus and method for reducing noise in fingerprint sensing circuits
WO2010036445A1 (en) 2008-07-22 2010-04-01 Validity Sensors, Inc. System, device and method for securing a device component
US8391568B2 (en) 2008-11-10 2013-03-05 Validity Sensors, Inc. System and method for improved scanning of fingerprint edges
US8278946B2 (en) 2009-01-15 2012-10-02 Validity Sensors, Inc. Apparatus and method for detecting finger activity on a fingerprint sensor
US8600122B2 (en) 2009-01-15 2013-12-03 Validity Sensors, Inc. Apparatus and method for culling substantially redundant data in fingerprint sensing circuits
US8374407B2 (en) 2009-01-28 2013-02-12 Validity Sensors, Inc. Live finger detection
US9274553B2 (en) 2009-10-30 2016-03-01 Synaptics Incorporated Fingerprint sensor and integratable electronic display
US9336428B2 (en) 2009-10-30 2016-05-10 Synaptics Incorporated Integrated fingerprint sensor and display
US8866347B2 (en) 2010-01-15 2014-10-21 Idex Asa Biometric image sensing
US8791792B2 (en) 2010-01-15 2014-07-29 Idex Asa Electronic imager using an impedance sensor grid array mounted on or about a switch and method of making
US8421890B2 (en) 2010-01-15 2013-04-16 Picofield Technologies, Inc. Electronic imager using an impedance sensor grid array and method of making
US9666635B2 (en) 2010-02-19 2017-05-30 Synaptics Incorporated Fingerprint sensing circuit
US8716613B2 (en) * 2010-03-02 2014-05-06 Synaptics Incoporated Apparatus and method for electrostatic discharge protection
US9001040B2 (en) 2010-06-02 2015-04-07 Synaptics Incorporated Integrated fingerprint sensor and navigation device
TWI409919B (zh) * 2010-06-04 2013-09-21 Ind Tech Res Inst 真空氣密之有機構裝載體與感測器元件構裝
US9343651B2 (en) 2010-06-04 2016-05-17 Industrial Technology Research Institute Organic packaging carrier
US8331096B2 (en) 2010-08-20 2012-12-11 Validity Sensors, Inc. Fingerprint acquisition expansion card apparatus
JP5541088B2 (ja) * 2010-10-28 2014-07-09 ソニー株式会社 撮像素子パッケージ、撮像素子パッケージの製造方法、及び、電子機器
US8538097B2 (en) 2011-01-26 2013-09-17 Validity Sensors, Inc. User input utilizing dual line scanner apparatus and method
US8594393B2 (en) 2011-01-26 2013-11-26 Validity Sensors System for and method of image reconstruction with dual line scanner using line counts
US9406580B2 (en) 2011-03-16 2016-08-02 Synaptics Incorporated Packaging for fingerprint sensors and methods of manufacture
US10043052B2 (en) 2011-10-27 2018-08-07 Synaptics Incorporated Electronic device packages and methods
US9195877B2 (en) 2011-12-23 2015-11-24 Synaptics Incorporated Methods and devices for capacitive image sensing
US9785299B2 (en) 2012-01-03 2017-10-10 Synaptics Incorporated Structures and manufacturing methods for glass covered electronic devices
CN102569247A (zh) * 2012-01-17 2012-07-11 华为终端有限公司 集成模块、集成系统板和电子设备
KR101849223B1 (ko) * 2012-01-17 2018-04-17 삼성전자주식회사 반도체 패키지 및 그 제조 방법
US9268991B2 (en) 2012-03-27 2016-02-23 Synaptics Incorporated Method of and system for enrolling and matching biometric data
US9251329B2 (en) 2012-03-27 2016-02-02 Synaptics Incorporated Button depress wakeup and wakeup strategy
US9137438B2 (en) 2012-03-27 2015-09-15 Synaptics Incorporated Biometric object sensor and method
US9600709B2 (en) 2012-03-28 2017-03-21 Synaptics Incorporated Methods and systems for enrolling biometric data
US9152838B2 (en) 2012-03-29 2015-10-06 Synaptics Incorporated Fingerprint sensor packagings and methods
CN109407862B (zh) 2012-04-10 2022-03-11 傲迪司威生物识别公司 生物计量感测
US9665762B2 (en) 2013-01-11 2017-05-30 Synaptics Incorporated Tiered wakeup strategy
USD758372S1 (en) * 2013-03-13 2016-06-07 Nagrastar Llc Smart card interface
US9888283B2 (en) 2013-03-13 2018-02-06 Nagrastar Llc Systems and methods for performing transport I/O
JP6235415B2 (ja) * 2014-06-10 2017-11-22 アルプス電気株式会社 湿度検知装置
JP6363495B2 (ja) * 2014-12-25 2018-07-25 京セラ株式会社 電子素子実装用基板および電子装置
USD864968S1 (en) 2015-04-30 2019-10-29 Echostar Technologies L.L.C. Smart card interface
TWI685125B (zh) * 2018-12-05 2020-02-11 海華科技股份有限公司 影像擷取模組及可攜式電子裝置
JP6713589B1 (ja) * 2020-03-04 2020-06-24 浜松ホトニクス株式会社 光検出装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03209746A (ja) * 1990-01-11 1991-09-12 Toshiba Corp 半導体パッケージ
JP2006066424A (ja) * 2004-08-24 2006-03-09 Kyocera Corp 配線基板
CN1822357A (zh) * 2005-02-18 2006-08-23 新光电气工业株式会社 半导体器件封装及其制造方法和半导体器件
JP2006245090A (ja) * 2005-03-01 2006-09-14 Konica Minolta Holdings Inc 半導体用パッケージ及びその製造方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57115850A (en) * 1981-01-10 1982-07-19 Nec Corp Chip carrier for semiconductor ic
JPS6098648A (ja) 1983-11-02 1985-06-01 Mitsubishi Electric Corp フリツプチツプ用チツプキヤリア
US5637916A (en) * 1996-02-02 1997-06-10 National Semiconductor Corporation Carrier based IC packaging arrangement
JP3982876B2 (ja) * 1997-06-30 2007-09-26 沖電気工業株式会社 弾性表面波装置
JPH1140948A (ja) * 1997-07-22 1999-02-12 Advantest Corp 多層プリント基板
AU2001227912A1 (en) * 2000-01-13 2001-07-24 Alpha Industries, Inc. Microwave ic package with dual mode wave guide
US6462950B1 (en) * 2000-11-29 2002-10-08 Nokia Mobile Phones Ltd. Stacked power amplifier module
JP3645833B2 (ja) * 2001-05-23 2005-05-11 勝開科技股▲ふん▼有限公司 イメージセンサのスタックパッケージ構造
JP2003007962A (ja) * 2001-06-19 2003-01-10 Toshiba Corp 半導体積層モジュール
US6664864B2 (en) * 2001-10-31 2003-12-16 Cts Corporation Cavity design printed circuit board for a temperature compensated crystal oscillator and a temperature compensated crystal oscillator employing the same
US6609915B2 (en) * 2001-11-30 2003-08-26 Fci Americas Technology Interconnect for electrically connecting a multichip module to a circuit substrate and processes for making and using same
SG107595A1 (en) * 2002-06-18 2004-12-29 Micron Technology Inc Semiconductor devices and semiconductor device components with peripherally located, castellated contacts, assembles and packages including such semiconductor devices or packages and associated methods
JP2004031651A (ja) * 2002-06-26 2004-01-29 Sony Corp 素子実装基板及びその製造方法
US7164197B2 (en) * 2003-06-19 2007-01-16 3M Innovative Properties Company Dielectric composite material
TWI278048B (en) * 2003-11-10 2007-04-01 Casio Computer Co Ltd Semiconductor device and its manufacturing method
WO2005054835A1 (ja) * 2003-12-01 2005-06-16 Ngk Spark Plug Co., Ltd. ガスセンサ
JP4692722B2 (ja) * 2004-01-29 2011-06-01 セイコーエプソン株式会社 電子部品用パッケージおよび電子部品
JP3949677B2 (ja) * 2004-07-13 2007-07-25 古河電気工業株式会社 光ファイバケーブル
JP2006060178A (ja) * 2004-08-24 2006-03-02 Dainippon Printing Co Ltd センサーパッケージ
US7613007B2 (en) * 2004-12-21 2009-11-03 E. I. Du Pont De Nemours And Company Power core devices
KR100688769B1 (ko) * 2004-12-30 2007-03-02 삼성전기주식회사 도금에 의한 칩 내장형 인쇄회로기판 및 그 제조 방법
US20060220227A1 (en) * 2005-04-04 2006-10-05 Data Device Corporation High density integrated circuit having multiple chips and employing a ball grid array (BGA) and method for making same
JP2006303335A (ja) * 2005-04-25 2006-11-02 Sony Corp 電子部品搭載用基板及びそれを用いた電子装置
US20060244124A1 (en) * 2005-04-27 2006-11-02 Teradyne, Inc. Reduced cost printed circuit board
CN101194418B (zh) * 2005-06-08 2013-03-27 Cts公司 电压控制型声表面波振荡器模块
JP2009502024A (ja) * 2005-06-27 2009-01-22 ラミナ ライティング インコーポレーテッド 発光ダイオードパッケージ及びその製造方法
US7417221B2 (en) * 2005-09-08 2008-08-26 Gentex Corporation Automotive vehicle image sensor
JP4703342B2 (ja) * 2005-09-28 2011-06-15 コーア株式会社 配線基板の製造方法
EP1942574B1 (en) * 2005-10-28 2017-09-27 Hitachi Metals, Ltd. Dc-dc converter
KR100653249B1 (ko) * 2005-12-07 2006-12-04 삼성전기주식회사 메탈코어, 패키지 기판 및 그 제작방법
JP2007194516A (ja) * 2006-01-23 2007-08-02 Matsushita Electric Ind Co Ltd 複合配線基板およびその製造方法、ならびに電子部品の実装体および製造方法
US7746661B2 (en) * 2006-06-08 2010-06-29 Sandisk Corporation Printed circuit board with coextensive electrical connectors and contact pad areas
US7473577B2 (en) * 2006-08-11 2009-01-06 International Business Machines Corporation Integrated chip carrier with compliant interconnect
US7808788B2 (en) * 2007-06-29 2010-10-05 Delphi Technologies, Inc. Multi-layer electrically isolated thermal conduction structure for a circuit board assembly
US20090201654A1 (en) * 2008-02-08 2009-08-13 Lambert Simonovich Method and system for improving electrical performance of vias for high data rate transmission

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03209746A (ja) * 1990-01-11 1991-09-12 Toshiba Corp 半導体パッケージ
JP2006066424A (ja) * 2004-08-24 2006-03-09 Kyocera Corp 配線基板
CN1822357A (zh) * 2005-02-18 2006-08-23 新光电气工业株式会社 半导体器件封装及其制造方法和半导体器件
JP2006245090A (ja) * 2005-03-01 2006-09-14 Konica Minolta Holdings Inc 半導体用パッケージ及びその製造方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102867836B (zh) * 2011-07-07 2017-04-12 索尼公司 固态图像传感装置和电子设备
CN102867836A (zh) * 2011-07-07 2013-01-09 索尼公司 固态图像传感装置和电子设备
CN103378118A (zh) * 2012-04-27 2013-10-30 佳能株式会社 电子元器件、安装部件、电子装置和它们的制造方法
US9155212B2 (en) 2012-04-27 2015-10-06 Canon Kabushiki Kaisha Electronic component, mounting member, electronic apparatus, and their manufacturing methods
US9220172B2 (en) 2012-04-27 2015-12-22 Canon Kabushiki Kaisha Electronic component, electronic module, their manufacturing methods, mounting member, and electronic apparatus
US9253922B2 (en) 2012-04-27 2016-02-02 Canon Kabushiki Kaisha Electronic component and electronic apparatus
CN103378118B (zh) * 2012-04-27 2016-03-16 佳能株式会社 电子元器件、安装部件、电子装置和它们的制造方法
CN104458865B (zh) * 2013-09-16 2018-11-16 Lg伊诺特有限公司 气体传感器组件
CN104458865A (zh) * 2013-09-16 2015-03-25 Lg伊诺特有限公司 气体传感器组件
US9970911B2 (en) 2013-09-16 2018-05-15 Lg Innotek Co., Ltd. Gas sensor package
CN107532941A (zh) * 2015-04-28 2018-01-02 浜松光子学株式会社 光检测装置
CN107532941B (zh) * 2015-04-28 2021-05-25 浜松光子学株式会社 光检测装置
US11118972B2 (en) 2015-04-28 2021-09-14 Hamamatsu Photonics K.K. Optical detection device having adhesive member
US11555741B2 (en) 2015-04-28 2023-01-17 Hamamatsu Photonics K.K. Optical detection device having adhesive member
CN109791073A (zh) * 2016-04-29 2019-05-21 西利奥斯技术公司 多光谱成像设备
CN109791073B (zh) * 2016-04-29 2022-03-01 西利奥斯技术公司 多光谱成像设备
CN112151564A (zh) * 2020-11-06 2020-12-29 积高电子(无锡)有限公司 应用于图像传感器的叠层封装结构及封装方法

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